CN205004353U - LED packaging structure and LED lamps and lanterns - Google Patents
LED packaging structure and LED lamps and lanterns Download PDFInfo
- Publication number
- CN205004353U CN205004353U CN201520701139.9U CN201520701139U CN205004353U CN 205004353 U CN205004353 U CN 205004353U CN 201520701139 U CN201520701139 U CN 201520701139U CN 205004353 U CN205004353 U CN 205004353U
- Authority
- CN
- China
- Prior art keywords
- inner chamber
- led
- metal base
- upper strata
- encapsulation structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- 241001465382 Physalis alkekengi Species 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 27
- 239000012790 adhesive layer Substances 0.000 claims description 24
- 238000005538 encapsulation Methods 0.000 claims description 20
- 239000002904 solvent Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 6
- 239000000843 powder Substances 0.000 abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract description 3
- 230000002045 lasting effect Effects 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 239000003292 glue Substances 0.000 abstract 3
- 238000005253 cladding Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000007774 longterm Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
Landscapes
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Abstract
The utility model discloses a LED packaging structure and LED lamps and lanterns, LED packaging structure includes: metal base, the reflection cup, the reflection cup is fixed metal base is last, a LED chip, the LED chip is fixed on metal base's the solid crystal face, and lie in the bottom of the inner chamber of reflection cup, the fluorescence glue film, the fluorescence glue film is packed cladding in the inner chamber of reflection cup the LED chip, still include: the organosilicon thin layer, the organosilicon thin layer covers the fluorescence glue film on the surface. The organosilicon thin layer not only can play the effect of protection to metallic reflective layer, can play sulphide in the long -term defence environment to fluorescent powder layer in addition, effect that impurity such as steam corrode, and the phosphor powder that especially makes moist easily to silicate and fluoride etc. Has played fine guard action, and high compactness organosilicon colorless transparent does not just influence LED's reflectivity to guarantee LED's luminous efficiency and lasting luminance.
Description
Technical field
The utility model relates to technical field of semiconductors, particularly relates to a kind of LED encapsulation structure and LED lamp.
Background technology
In recent years, along with the diversification of LED product application, the product demands such as high-power and TV backlight constantly increase, environment for use along with LED is also more and more severe, to the stability of LED and the requirement in useful life also more and more higher, be faced with the problem of brightness decay serious and silver coating blackening when traditional LED uses in the environment that some are hot and humid and outdoor.
Above-mentioned problem can be improved to a certain extent by improving encapsulation material, but also face the rising of Material Cost simultaneously.In recent years, many producers are had to start to research and develop the stability improving LED by improving the technique encapsulated.Have been reported; special coating is utilized to process the object to reaching anti-sulfuration to metallic reflector; but the method can only protect metallic reflector, and can not protect phosphor powder layer, the hydrone in air etc. still can enter in LED and react with fluorescent material.
Summary of the invention
For above-mentioned prior art present situation, the utility model provides a kind of LED encapsulation structure, solves fluorescent material in traditional LED Long-Time Service process and easily loses efficacy and the problem of the easy blackening of metallic reflector, improve the anti-curability of LED and extend LED useful life.
In order to solve the problems of the technologies described above, a kind of LED encapsulation structure provided by the utility model, comprising:
Metal base;
Reflector, described reflector is fixed on described metal base;
LED chip, described LED chip is fixed on the die bond face of described metal base, and is positioned at the bottom of the inner chamber of described reflector;
Fluorescent adhesive layer, described fluorescent adhesive layer to be filled in the inner chamber of described reflector and coated described LED chip;
Also comprise:
Organosilicone film layer, described organosilicone film layer covers on the surface of described fluorescent adhesive layer.
Wherein in an embodiment, described organosilicone film layer is by the mixture at described fluorescent adhesive layer surface coverage organosilicon and volatile solvent, and then baking is formed after described volatile solvent is volatilized.
Wherein in an embodiment, the thickness of described organosilicone film layer is 0.1 ~ 0.5mm.
Wherein in an embodiment, the inner chamber of described reflector becomes step shape, and it comprises:
Lower floor's inner chamber, described fluorescent adhesive layer is filled in described lower floor inner chamber; With
Upper strata inner chamber, described upper strata inner chamber is positioned at the top of described lower floor inner chamber, and the cross-sectional area of described upper strata inner chamber is greater than the cross-sectional area of described lower floor inner chamber, and described organosilicone film layer is arranged in the inner chamber of described upper strata.
Wherein in an embodiment, the angle between the inwall of described upper strata inner chamber and the die bond face of described metal base is 80 ~ 90 degree.
Wherein in an embodiment, the shape of cross section of described lower floor inner chamber and described upper strata inner chamber is circular or square.
A kind of LED lamp provided by the utility model, described light fixture comprises above-mentioned LED encapsulation structure.
Compared with prior art; the LED encapsulation structure that the utility model provides; due to the surface-coated organosilicone film layer at fluorescent adhesive layer; organosilicone film layer can not only play the effect of protection to metallic reflector; and can play phosphor powder layer and defend sulfide in environment for a long time; the effect of the contaminating erosion such as steam; the fluorescent material particularly easily made moist for silicate and fluoride etc. plays a very good protection; and high compactness organosilicon water white transparency; do not affect the reflectivity of LED, thus ensure the light extraction efficiency of LED and lasting brightness.
The beneficial effect that the utility model additional technical feature has will be described in this specification embodiment part.
Accompanying drawing explanation
Fig. 1 is the structural representation of the LED encapsulation structure in the utility model embodiment;
Fig. 2 is the structural representation before the volatile solvent volatilization of LED encapsulation structure in the utility model embodiment;
Fig. 3 is the sectional structure schematic diagram of the reflector of LED encapsulation structure in the utility model embodiment.
Description of reference numerals: 1, reflector; 11, the inner chamber of reflector; 11a, lower floor's inner chamber; 11b, upper strata inner chamber; 2, metal base; 3, LED chip; 4, fluorescent adhesive layer; 5, organosilicone film layer; 6, the mixture of machine silicon and volatile solvent.
Embodiment
And the utility model is described in detail below with reference to the accompanying drawings in conjunction with the embodiments.It should be noted that, when not conflicting, the feature in following embodiment and embodiment can combine mutually.
As shown in Figure 1, the LED encapsulation structure in one of them embodiment of the utility model comprises: metal base 2, reflector 1, LED chip 3, fluorescent adhesive layer 4 and organosilicone film layer 5, and wherein, described reflector 1 is fixed on described metal base 2; Described LED chip 3 is fixed on the die bond face of described metal base 2, and is positioned at the bottom of the inner chamber 11 of described reflector 1; Described fluorescent adhesive layer 4 to be filled in the inner chamber 11 of described reflector 1 and coated described LED chip 3; Described organosilicone film layer 5 covers on the surface of described fluorescent adhesive layer 4.
The LED encapsulation structure of the utility model embodiment; due to the surface-coated organosilicone film layer 5 at fluorescent adhesive layer 4; organosilicone film layer 5 can not only play the effect of protection to metallic reflector; and can play phosphor powder layer and defend sulfide in environment for a long time; the effect of the contaminating erosion such as steam; the fluorescent material particularly easily made moist for silicate and fluoride etc. plays a very good protection; and high compactness organosilicon water white transparency; do not affect the reflectivity of LED, thus ensure the light extraction efficiency of LED and lasting brightness.
As shown in Figure 2, more preferably, described organosilicone film layer 5 is by the mixture 6 at described fluorescent adhesive layer 4 surface coverage organosilicon and volatile solvent, then baking makes described volatile solvent, after property solvent evaporates to be evaporated, organosilicon under residual forms the film of one deck high compactness on fluorescent adhesive layer, and through overbaking, film is attached on the surface of fluorescent adhesive layer securely.Organosilicone film layer 5 covers described fluorescent adhesive layer 4 on the surface by which, has adhesive force large, the uniform advantage of thickness.Certainly, organosilicone film layer 5 can also adopt other modes to cover described fluorescent adhesive layer 4 on the surface.
More preferably, the thickness of described organosilicone film layer 5 is 0.1 ~ 0.5mm.
As shown in Figure 3, the inner chamber 11 one-tenth step shape of described reflector 1, it comprises lower floor inner chamber 11a and upper strata inner chamber 11b, and described fluorescent adhesive layer 4 is filled in described lower floor inner chamber 11a; Described upper strata inner chamber 11b is positioned at the top of described lower floor inner chamber 11a, and the cross-sectional area of described upper strata inner chamber 11b is greater than the cross-sectional area of described lower floor inner chamber 11a, and described organosilicone film layer 5 is arranged in described upper strata inner chamber 11b.Fluorescent adhesive layer 4 and organosilicone film layer 5 lay respectively in lower floor inner chamber 11a and upper strata inner chamber 11b, can realize fluorescent adhesive layer 4 and organosilicone film layer 5 does not interfere with each other, and are conducive to the evenness on surface simultaneously.
More preferably, angle between the inwall of described upper strata inner chamber 11b and the die bond face of described metal base 2 is 80 ~ 90 degree, like this, the inwall of upper strata inner chamber 11b is substantially vertical with the die bond face of metal base 2, mixture 6 natural subsidence of organosilicon and volatile solvent can be made, avoid the formation of step.
More preferably, the shape of cross section of described lower floor inner chamber 11a and described upper strata inner chamber 11b is circular or square.
In another embodiment of the utility model, provide a kind of LED lamp, described light fixture comprises the LED encapsulation structure in above-described embodiment.
The above embodiment only have expressed several execution mode of the present utility model, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the utility model the scope of the claims.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection range of the present utility model.
Claims (7)
1. a LED encapsulation structure, comprising:
Metal base (2);
Reflector (1), described reflector (1) is fixed on described metal base (2);
LED chip (3), described LED chip (3) is fixed on the die bond face of described metal base (2), and is positioned at the bottom of the inner chamber (11) of described reflector (1);
Fluorescent adhesive layer (4), described fluorescent adhesive layer (4) to be filled in the inner chamber (11) of described reflector (1) and coated described LED chip (3);
It is characterized in that, also comprise:
Organosilicone film layer (5), described organosilicone film layer (5) covers on the surface of described fluorescent adhesive layer (4).
2. LED encapsulation structure according to claim 1, it is characterized in that, described organosilicone film layer (5) is by the mixture at described fluorescent adhesive layer (4) surface coverage organosilicon and volatile solvent, and then baking is formed after described volatile solvent is volatilized.
3. LED encapsulation structure according to claim 1, is characterized in that, the thickness of described organosilicone film layer (5) is 0.1 ~ 0.5mm.
4. LED encapsulation structure as claimed in any of claims 1 to 3, is characterized in that, the inner chamber (11) of described reflector (1) becomes step shape, and it comprises:
Lower floor's inner chamber (11a), described fluorescent adhesive layer (4) is filled in described lower floor inner chamber (11a); With
Upper strata inner chamber (11b), described upper strata inner chamber (11b) is positioned at the top of described lower floor inner chamber (11a), and the cross-sectional area on described upper strata inner chamber (11b) is greater than the cross-sectional area of described lower floor inner chamber (11a), described organosilicone film layer (5) is arranged in described upper strata inner chamber (11b).
5. LED encapsulation structure according to claim 4, is characterized in that, the angle between the inwall on described upper strata inner chamber (11b) and the die bond face of described metal base (2) is 80 ~ 90 degree.
6. LED encapsulation structure according to claim 4, is characterized in that, the shape of cross section on described lower floor inner chamber (11a) and described upper strata inner chamber (11b) is circular or square.
7. a LED lamp, is characterized in that, described light fixture comprises as the LED encapsulation structure in claim 1 to 6 as described in any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520701139.9U CN205004353U (en) | 2015-09-10 | 2015-09-10 | LED packaging structure and LED lamps and lanterns |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520701139.9U CN205004353U (en) | 2015-09-10 | 2015-09-10 | LED packaging structure and LED lamps and lanterns |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205004353U true CN205004353U (en) | 2016-01-27 |
Family
ID=55161225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520701139.9U Active CN205004353U (en) | 2015-09-10 | 2015-09-10 | LED packaging structure and LED lamps and lanterns |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205004353U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019034043A1 (en) * | 2017-08-18 | 2019-02-21 | 南京中硼联康医疗科技有限公司 | Moderator for moderating neutrons |
| CN109980065A (en) * | 2017-12-27 | 2019-07-05 | 晶能光电（江西）有限公司 | White-light LED chip and preparation method thereof |
-
2015
- 2015-09-10 CN CN201520701139.9U patent/CN205004353U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019034043A1 (en) * | 2017-08-18 | 2019-02-21 | 南京中硼联康医疗科技有限公司 | Moderator for moderating neutrons |
| US11400316B2 (en) | 2017-08-18 | 2022-08-02 | Neuboron Medtech Ltd. | Moderator for moderating neutrons |
| CN109980065A (en) * | 2017-12-27 | 2019-07-05 | 晶能光电（江西）有限公司 | White-light LED chip and preparation method thereof |
| CN109980065B (en) * | 2017-12-27 | 2024-08-27 | 晶能光电股份有限公司 | White light LED chip and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5422599B2 (en) | Light emitting diode package structure and manufacturing method thereof | |
| CN101872829B (en) | White light LED (Light Emitting Diode) with high luminous efficiency and encapsulation method thereof | |
| CN201651846U (en) | White-light LED light source | |
| CN103872224A (en) | Novel LED (Light Emitting Diode) illuminating element | |
| CN101551068A (en) | Light emitting diode device and encapsulating method thereof | |
| KR20100127759A (en) | Led light engine kernel and method of making the kernel | |
| CN107086263A (en) | Display device and its four sides are emitting led | |
| CN205004353U (en) | LED packaging structure and LED lamps and lanterns | |
| CN102664229B (en) | Light emitting diode light source structure | |
| CN207529973U (en) | Quantum dot LED component, backlight lamp bar and backlight module | |
| CN207602616U (en) | A kind of Novel LED encapsulating structure | |
| CN203812913U (en) | LED packaging structure | |
| CN106784240B (en) | The packaging method and its LED component and its LED light of a kind of white light LED part | |
| CN211238290U (en) | CSP packaging structure and lamp strip based on CSP packaging structure | |
| CN102867820A (en) | Light-emitting diode encapsulating structure | |
| CN208873757U (en) | A kind of quantum dot LED encapsulation structure | |
| CN109301053B (en) | Quantum dot LED packaging structure and manufacturing method thereof | |
| CN102800782B (en) | Light-emitting diode (LED) light source device | |
| CN208908221U (en) | A kind of LED bilayer encapsulating structure | |
| CN204668351U (en) | Encapsulate firm light-emitting diode | |
| CN201956394U (en) | LED (Light-Emitting Diode) lighting module | |
| CN207068911U (en) | A kind of LED bar graph light source | |
| CN103367609A (en) | Low space color cast LED packaging structure | |
| CN210516749U (en) | LED double-layer glue structure | |
| CN205069636U (en) | Invert high -power LED packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240712 Address after: 241000 No.11, Weier Road, East District, Wuhu Economic and Technological Development Zone, Anhui Province Patentee after: Anhui ruituo Electronics Co.,Ltd. Country or region after: China Address before: Buildings E and F of the factory building in Xiawei Village, Ruhu Town, Huicheng District, Huizhou City, Guangdong Province, 519000 Patentee before: HUIZHOU THORLED-OPTO Co.,Ltd. Country or region before: China |