CN203367354U - Package structure of thin wafer level LED - Google Patents
Package structure of thin wafer level LED Download PDFInfo
- Publication number
- CN203367354U CN203367354U CN 201320410671 CN201320410671U CN203367354U CN 203367354 U CN203367354 U CN 203367354U CN 201320410671 CN201320410671 CN 201320410671 CN 201320410671 U CN201320410671 U CN 201320410671U CN 203367354 U CN203367354 U CN 203367354U
- Authority
- CN
- China
- Prior art keywords
- groove
- die cavity
- wafer level
- metallic reflector
- encapsulating structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
The utility model relates to a package structure of a thin wafer level LED, which belongs to the technical field of semiconductor package. The package structure comprises an LED chip (100) with an electrode (110) and a package cover (200). A concave mold cavity (210) is arranged in the package cover (200). The LED chip (100) is flipped on the surface of a metal reflective layer (400) and is buckled in the mold cavity (210) of the package cover (200). The size of the cross section of the metal reflective layer (400) is larger than the size of the cross section of the mold cavity (210) while is smaller than the size of the cross section of the package cover (200). A groove (600) shaped like a Chinese character 'ri' which rotates 90 degrees is arranged on the metal reflective layer (400). The partitioned metal reflective layer (400) is respectively connected with the positive electrode and the negative electrode of the electrode (110). A protective layer (700) is coated on the surface of a metal layer (500) and in the groove (600), and a protective layer opening (710) is formed. The package structure of the thin wafer level LED, which is provided by the utility model, has the advantages of small size, thinness, good heat dissipation, low package cost and no silicon substrate.
Description
Technical field
The utility model relates to the encapsulating structure of a kind of slim wafer level LED, belongs to the semiconductor packaging field.
Background technology
Along with after blue light and white light emitting diode (LED) carry out on a large scale marching toward practical stage in nineteen ninety, no matter be the full-color demonstration that utilizes LED to carry out, or the diversified product applications such as under the great attention that society represents energy-conservation subject under discussion in recent years, the smart mobile phone that LED spreads to, PC (PC), TV are backlight, illumination, white domestic appliances product or traffic signal sign is more and more wide.
At some special occasions, need the LED encapsulation that size is less, thinner, heat dispersion better, packaging cost is lower.And the many employings of current wafer level LED encapsulation are silica-based as substrate, the certain thickness guarantee of silica-based needs it have suitable intensity to support whole LED encapsulation, and silica-based existence has simultaneously limited that the LED encapsulation is less, thinner to size, the development of the lower direction of packaging cost.In addition, the heat produced during LED chip work also can pass to silica-based, silica-based heat conductivility not as good as metals such as copper, titaniums, has increased packaging thermal resistance, has affected the reliability of LED encapsulation.
The utility model content
From the above, the purpose of this utility model is to overcome the deficiency of said structure, and the encapsulating structure without silica-based slim wafer level LED that a kind of size is less, thinner, heat dispersion better, packaging cost is lower is provided.
the purpose of this utility model is achieved in that
The encapsulating structure of a kind of slim wafer level LED, comprise LED chip and cap, and described LED chip is provided with electrode, and described cap is provided with the die cavity of indent,
Also comprise metallic reflector, described LED chip upside-down mounting is in the surface of metallic reflector, and be buckled in the die cavity of described cap, the cross sectional dimensions of described metallic reflector is greater than the cross sectional dimensions of die cavity and is less than the cross sectional dimensions of cap, and form " mouth " font groove in the periphery of described metallic reflector, described metallic reflector disconnects between the positive pole of electrode and negative pole, form " one " font groove, the described groove of " one " font communicates with the described groove of " mouth " font, form " day " font groove of 90-degree rotation, the described metallic reflector cut off is connected with negative pole with the positive pole of electrode respectively, and at another surface metallization layer of described metallic reflector, armor coated in the surface of described metal level and groove, and formation protective layer opening exposed portions serve metal level.
Further, hold at least one LEDs chip in described die cavity.
Further, the perisporium of the bead of described die cavity arranges several open grooves, and the degree of depth of described groove is not more than the degree of depth of die cavity.
Further, the bottom of described groove and the angle of horizontal plane are α, 0～90 ° of α span.
Further, also comprise filler, described filler is filled die cavity and groove.
Further, the cross sectional dimensions of described metallic reflector is greater than the cross sectional dimensions that die cavity and groove extend and the cross sectional dimensions that is less than cap.
Further, the thickness of described metal level is more than 3 μ m.
Further, the thickness of described metal level is 10～15 μ m.
the beneficial effects of the utility model are:
1, the electrode of LED chip of the present utility model directly is connected with metal level by metallic reflector, and the surface of metallic reflector and the whole cap of metal level nearly cover, be conducive to reduce the junction temperature of LED, promote the radiating rate of LED chip, improve the reliability of encapsulating structure;
2, there is the cap that the glass of some strength or optical resin form and can better protect LED, and glass or optical resin good go out the light emission rate that optical property is conducive to guarantee LED;
3, the fillers such as silica gel in die cavity of the present utility model can improve the bonding strength between LED chip, cap and metallic reflector; If LED chip is blue chip, add equally distributed fluorescent material in filler, can realize the encapsulating structure of white light LEDs;
4, the encapsulating structure of wafer level LED of the present utility model, without silica-based, has solved again heat dissipation problem, and that therefore can do chip is thinner, less, more approaches the size of LED chip, is applied in some special fields, also can reduce packaging cost simultaneously.
The accompanying drawing explanation
The schematic diagram of the encapsulating structure that Fig. 1 is a kind of slim wafer level LED of the utility model;
The A-A cutaway view that Fig. 2 is Fig. 1;
The B-B cutaway view that Fig. 3 is Fig. 2.
Wherein:
Electrode 110
Die cavity 210
Groove 220
Filler 300
Groove 600
Protective layer opening 710.
Embodiment
Referring to Fig. 1 to Fig. 3, the encapsulating structure of a kind of slim wafer level LED of the utility model, comprise LED chip 100 and cap 200.LED chip 100 is provided with positive and negative electrode 110.Cap 200 is the transparent materials such as glass, optical resin, has both had some strength, can protect LED, has again the good light emission rate that goes out optical property, can guarantee LED.Cap 200 is provided with the die cavity 210 of indent.The cross section of cap 200 can be rectangle, circle etc., according to actual needs setting.LED chip 100 upside-down mountings are in the surface of metallic reflector 400, and are buckled in the die cavity 210 of cap 200.Die cavity 210 is interior can hold at least one LEDs chip 100.The material of metallic reflector 400 is aluminium/titanium/nickel, and its thickness is 4 μ m～6 μ m, the LED light of the metallic reflector 400 that turns back can be reflected to cap 200 again.The cross sectional dimensions of metallic reflector 400 is greater than the cross sectional dimensions of die cavity 210, the light of LED can be sealed in the die cavity 210 of cap 200; The cross sectional dimensions of metallic reflector 400 is less than again the cross sectional dimensions of cap 200 simultaneously, and forms " mouth " font groove 600 in the periphery of described metallic reflector 400.Described metallic reflector 400 disconnects between the positive pole of electrode 110 and negative pole, forms " one " font groove 600, and the described groove 600 of " one " font communicates with the described groove 600 of " mouth " font, " day " font groove 600 of formation 90-degree rotation.The described metallic reflector 400 cut off is connected with negative pole with the positive pole of electrode 110 respectively, and at another surface metallization layer 500 of described metallic reflector 400, described metal level 500 is titanium/copper, titanium tungsten/copper or titanium tungsten/gold, the thickness of metal level 500 is more than 3 μ m, for improving heat radiation, the thickness of metal level 500 can be 10～15 μ m.The surface of described metal level 500 and groove 600 interior armor coated 700.Protective layer 700 in " mouth " font groove 600 makes metallic reflector 400 insulation, and not oxidized.The protective layer 700 of " one " font groove 600 interior coatings cuts off and insulated metal reflector 400 and metal level 500, and the metallic reflector 400 of partition is connected with negative pole with the positive pole of electrode 110 respectively with metal level 500.And interior soldered ball or the metal connecting line of can arranging of protective layer opening 710 that another surface of metallic reflector 400 forms is conducive to connection and the application of subsequent technique.
For improving the bonding strength between LED chip 100, cap 200 and metallic reflector 400, can be at fillers 300 such as die cavity 210 interior filling gels.If LED chip 100 is blue chip, add equally distributed fluorescent material in filler 300, can realize the outgoing of white light, become the encapsulating structure of white light LEDs.
In addition, the perisporium of the bead of described die cavity 210 can arrange several open grooves 220, and the degree of depth of described groove 220 is not more than the degree of depth of die cavity 210, and communicates with die cavity 210, makes groove 220 become die cavity 210 and holds, adjusts the passage of filler 300.Flow, fully fill up die cavity 210 for convenience of liquid filler 300, can make the bottom of groove 220 tilt to die cavity 210.The bottom of groove 220 and the angle of horizontal plane are α, 0～90 ° of α span.The shape of cross section of groove 220 can, for straight or crooked, be determined according to actual needs.The cross sectional dimensions of metallic reflector 400 is greater than the cross sectional dimensions of die cavity 210 and groove 220 extensions and is less than the cross sectional dimensions of cap 200.
Claims (8)
1. the encapsulating structure of a slim wafer level LED, comprise LED chip (100) and cap (200), and described LED chip (100) is provided with electrode (110), and described cap (200) is provided with the die cavity (210) of indent,
It is characterized in that: also comprise metallic reflector (400), described LED chip (100) upside-down mounting is in the surface of metallic reflector (400), and be buckled in the die cavity (210) of described cap (200), the cross sectional dimensions of described metallic reflector (400) is greater than the cross sectional dimensions of die cavity (210) and is less than the cross sectional dimensions of cap (200), and form " mouth " font groove (600) in the periphery of described metallic reflector (400), described metallic reflector (400) disconnects between the positive pole of electrode (110) and negative pole, form " one " font groove (600), the described groove of " one " font (600) communicates with the described groove of " mouth " font (600), form " day " font groove (600) of 90-degree rotation, the described metallic reflector (400) cut off is connected with negative pole with the positive pole of electrode (110) respectively, and at another surface metallization layer (500) of described metallic reflector (400), in the surface of described metal level (500) and groove (600) armor coated (700), and formation protective layer opening (710) exposed portions serve metal level (500).
2. the encapsulating structure of a kind of slim wafer level LED according to claim 1, is characterized in that: hold at least one LEDs chip (100) in described die cavity (210).
3. the encapsulating structure of a kind of slim wafer level LED according to claim 1 and 2, it is characterized in that: the perisporium of the bead of described die cavity (210) arranges several open grooves (220), and the degree of depth of described groove (220) is not more than the degree of depth of die cavity (210).
4. the encapsulating structure of a kind of slim wafer level LED according to claim 3, it is characterized in that: the bottom of described groove (220) and the angle of horizontal plane are α, 0～90 ° of α span.
5. the encapsulating structure of a kind of slim wafer level LED according to claim 4, is characterized in that: also comprise filler (300), described filler (300) filling die cavity (210) and groove (220).
6. the encapsulating structure of a kind of slim wafer level LED according to claim 5 is characterized in that: the cross sectional dimensions of described metallic reflector (400) is greater than the cross sectional dimensions that die cavity (210) and groove (220) extend and the cross sectional dimensions that is less than cap (200).
7. according to the encapsulating structure of the described a kind of slim wafer level LED of claim 1 or 6, it is characterized in that: the thickness of described metal level (500) is more than 3 μ m.
8. the encapsulating structure of a kind of slim wafer level LED according to claim 7, it is characterized in that: the thickness of described metal level (500) is 10～15 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320410671 CN203367354U (en) | 2013-07-11 | 2013-07-11 | Package structure of thin wafer level LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320410671 CN203367354U (en) | 2013-07-11 | 2013-07-11 | Package structure of thin wafer level LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203367354U true CN203367354U (en) | 2013-12-25 |
Family
ID=49815074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320410671 Expired - Lifetime CN203367354U (en) | 2013-07-11 | 2013-07-11 | Package structure of thin wafer level LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203367354U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103354266A (en) * | 2013-07-11 | 2013-10-16 | 江阴长电先进封装有限公司 | Thin type wafer lever LED (Light-Emitting Diode) packaging structure and method |
| CN110767793A (en) * | 2015-05-05 | 2020-02-07 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
-
2013
- 2013-07-11 CN CN 201320410671 patent/CN203367354U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103354266A (en) * | 2013-07-11 | 2013-10-16 | 江阴长电先进封装有限公司 | Thin type wafer lever LED (Light-Emitting Diode) packaging structure and method |
| CN103354266B (en) * | 2013-07-11 | 2015-12-23 | 江阴长电先进封装有限公司 | The encapsulating structure of a kind of slim wafer level LED and method for packing thereof |
| CN110767793A (en) * | 2015-05-05 | 2020-02-07 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103354266B (en) | The encapsulating structure of a kind of slim wafer level LED and method for packing thereof | |
| CN102130235B (en) | Method and device for packaging LED chip | |
| CN105006508A (en) | Light emitting diode packaging structure | |
| CN105047793B (en) | The production method of light-emitting diode encapsulation structure | |
| CN212571036U (en) | Packaging support and packaging structure of deep ultraviolet LED | |
| CN102881812B (en) | Manufacturing method for Light emitting diode packaging structure | |
| CN102130111A (en) | Liquid-packaged high-power LED (light-emitting diode) device and packaging method of LED device | |
| CN202487569U (en) | LED module group | |
| CN203367354U (en) | Package structure of thin wafer level LED | |
| CN102620149A (en) | Three-dimensional light-emitting diode (LED) light source module and lamp with LED light source module | |
| CN204693116U (en) | Solid-state sealed LED bulb | |
| CN103325926B (en) | LED packaging structure used in on-board chip and fluorescent powder coating method thereof | |
| CN207353289U (en) | A kind of LED encapsulation structure and automobile dimming-distance lighting system for improving light efficiency | |
| CN103872218A (en) | LED support and LED luminous body | |
| CN203787455U (en) | LED packaging bracket and LED luminous body | |
| CN104638091A (en) | LED (light emitting diode) glass base plate | |
| CN201820793U (en) | LED (light emitting diode) encapsulating structure | |
| CN203787454U (en) | Led bracket and led luminous body | |
| CN102709447A (en) | Light emitting diode equipment | |
| CN206236704U (en) | The structure of LED flip-chip substrates | |
| CN202585408U (en) | Improved structure of a multilayer array-type light-emitting diode engine | |
| CN201425272Y (en) | LED packaging structure | |
| CN205081143U (en) | Two -sided luminous UV encapsulation of LED stereoplasm base plate | |
| CN203103348U (en) | COB base plate structure-equipped LED lamp source | |
| CN103208488A (en) | Thin-type multilayer array type light-emitting diode optical engine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131225 |
|
| CX01 | Expiry of patent term |