CN201820793U

CN201820793U - LED (light emitting diode) encapsulating structure

Info

Publication number: CN201820793U
Application number: CN2010205810676U
Authority: CN
Inventors: 万喜红; 雷玉厚; 罗龙; 易胤炜
Original assignee: LIGHTING OPTOECTRONIC(SZ) CO Ltd
Current assignee: FUJIAN LIGHTNING OPTOELECTRONIC CO., LTD.
Priority date: 2010-10-28
Filing date: 2010-10-28
Publication date: 2011-05-04
Anticipated expiration: 2020-10-28

Abstract

The embodiment of the utility model relates to an LED (light emitting diode) encapsulating structure, which comprises a silicon substrate and an LED wafer arranged on the silicon substrate, wherein circuits are printed on both the front side and the reverse side of the silicon substrate, and a penetration hole for electric conduction and heat conduction between the circuit on the front side and the circuit on the reverse side is formed in the silicon substrate. Due to the adoption of the silicon substrate with high thermal conductivity, the service life and the reliability of an LED device under different using environments are ensured; silica gel fences slightly higher than the wafer are arranged around the LED wafer, and a space formed by the silica gel walls is filled with fluorescent glue, so as to improve the effect of spatial color-temperature distribution; because a lens is made of silica gel material, the LED device is guaranteed to bear a higher temperature; and the silica gel has excellent light transmittance to ultraviolet rays, thereby being prevented from yellowing, and the reliability is better.

Description

The LED encapsulating structure

Technical field

The utility model relates to the LED field, relates in particular to a kind of LED encapsulating structure.

Background technology

Light-emitting diode (Light Emitting Diode, LED) be a kind of solid-state semiconductor device that electric energy can be converted into visible light, it is widely used in fields such as display screen, traffic signal, display light source, lamps for vehicle, LED-backlit source, lighting source.The LED encapsulating structure generally comprises metal substrate, LED wafer, fluorescence glue-line and lens jacket.

The inventor finds that there is following technical problem at least in prior art in implementing the utility model process:

Because the LED encapsulating structure adopts metal substrate, make that the production cost of LED encapsulating structure is high; Generally adopt a kind of PC lens to protect chip and adjust rising angle, but the PC material when using out of doors because xanthochromia takes place in the irradiation of ultraviolet light easily, the luminous efficiency of device is reduced; Thermal coefficient of expansion between luminescence chip material and the metal substrate can cause chip and substrate cracking, and then luminous inefficacy or heat conduction weaken.

The utility model content

Technical problem to be solved in the utility model is, a kind of LED encapsulating structure is provided, and improves radiating effect, improves the colour temperature spatial distribution, reduces the production cost of LED encapsulating structure.

For solving the problems of the technologies described above, a kind of LED encapsulating structure is provided, comprise substrate and be arranged at LED wafer on the described substrate, described substrate is a silicon substrate, the front of described substrate, reverse side all are printed with circuit, and described substrate is provided with and is used for conducting electricity between the circuit of the circuit in described front and described reverse side and the perforation of heat conduction.

Based on a kind of design concept of the present utility model, weld by bond technology between described substrate and the described LED wafer.

Based on a kind of design concept of the present utility model, be provided with silica gel enclosing wall around the described LED wafer, and described LED wafer surface is coated with transparent silica gel, be coated with the fluorescence glue-line in the inner space of described silica gel enclosing wall.

Technique scheme has following beneficial effect at least:

1. the silicon substrate thermal conductivity guarantees that up to 611W/m.K device is in following life-span of different environment for use and reliability;

2. adopt bond technology can save the cost of gold thread, to compare its reliability higher with the product of ultrasonic bonding, for getting optical efficiency, and heat dispersion, the design that strengthens working current density all is best;

3. silica gel enclosing wall is set around the LED wafer, and the colour temperature spatial distribution can get effectively to be improved;

4. very easily moulding of silica-gel lens helps the reasonable utilization of light more.

Description of drawings

Fig. 1 is the cutaway view of LED encapsulating structure of the present utility model.

Embodiment

As shown in Figure 1, the utility model provides a kind of LED encapsulating structure, it mainly comprises silicon substrate 1, is arranged at the LED wafer 2 on the silicon substrate 1 and is arranged at LED wafer 2 silica gel enclosing wall 3 all around, in LED wafer 2 surface-coated transparent silica gel is arranged, and in this transparent silica gel and silica gel enclosing wall 3 space at interval, be coated with fluorescence glue-line 4, be provided with transparent silicon glue-line 5 and lens 6 outside the fluorescent glue 4, wherein, silicon substrate 1 front, equal printed wire on the contrary, the centre is done a perforation and is guided to reverse side, conduction and heat conduction between the circuit that realization is positive and the circuit of reverse side.

Like this, by a kind of LED encapsulating structure is provided, it comprises silicon substrate 1 and is arranged at LED wafer 2 on the silicon substrate 1, set up a silica gel enclosing wall 3 higher highly slightly than LED wafer 2 in LED wafer 2 peripheries, earlier at LED wafer 2 surface-coated layer of transparent silica gel, apply fluorescence glue-line 4 again, the fluorescent glue that silica gel enclosing wall 3 can be blocked fluorescence glue-line 4 scatters on whole silicon substrate 1, on silicon substrate 1, add a cover a silica-gel lens again, and fill up silica gel, this technology can effectively solve the uneven phenomenon of colour temperature spatial distribution; LED wafer 2 is welded on the silicon substrate 1 by the gold goal bond technology, this encapsulation can be saved the cost of gold thread, and to compare its reliability higher with the product of ultrasonic bonding, for getting optical efficiency, heat dispersion, the design that strengthens working current density all is best.

The above is an embodiment of the present utility model; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also are considered as protection range of the present utility model.

Claims

1. LED encapsulating structure, comprise substrate and be arranged at LED wafer on the described substrate, it is characterized in that, described substrate is a silicon substrate, the front of described substrate, reverse side all are printed with circuit, and described substrate is provided with and is used for conducting electricity between the circuit of the circuit in described front and described reverse side and the perforation of heat conduction.

2. LED encapsulating structure as claimed in claim 1 is characterized in that, welds by bond technology between described substrate and the described LED wafer.

3. LED encapsulating structure as claimed in claim 1 or 2 is characterized in that, is provided with silica gel enclosing wall around the described LED wafer, and described LED wafer surface is coated with transparent silica gel, is coated with the fluorescence glue-line in the inner space of described silica gel enclosing wall.