CN106129231B - Light emitting device and preparation method thereof - Google Patents
Light emitting device and preparation method thereof Download PDFInfo
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- CN106129231B CN106129231B CN201610293182.5A CN201610293182A CN106129231B CN 106129231 B CN106129231 B CN 106129231B CN 201610293182 A CN201610293182 A CN 201610293182A CN 106129231 B CN106129231 B CN 106129231B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of light emitting device and preparation method thereof, including a wavelength conversion layer, at least a luminescence unit and a reflection protection part.Wavelength conversion layer has a upper surface and a lower surface relative to each other.Luminescence unit has two electronic pads, and two electronic pads are located at the same side of luminescence unit.Luminescence unit is configured on the upper surface of wavelength conversion layer and exposes two electronic pads.Reflection protection part coats at least partially luminescent unit and partial wavelength conversion layer, and exposes two electronic pads of luminescence unit.Do not need to support and fix using existing bearing support luminescence unit not only based on above-mentioned, of the invention light emitting device, and can effectively less package thickness and cost of manufacture, meanwhile, the positive light extraction efficiency of luminescence unit can also be effectively improved.
Description
Technical field
The invention relates to a kind of light emitting devices and preparation method thereof, and in particular to one kind with light emitting diode
Light emitting device and preparation method thereof as light source.
Background technique
In general, light-emitting diode encapsulation structure is usually to configure light-emitting diode chip for backlight unit by ceramic material or gold
On the bearing base for belonging to the recessed cup type state that material is formed, with fixed and support light-emitting diode chip for backlight unit.And then use encapsulation
Colloid coats light-emitting diode chip for backlight unit, and completes the production of light-emitting diode encapsulation structure.At this point, light-emitting diode chip for backlight unit
Potential in bearing base top and be located at recessed cup in.However, the bearing base of recessed cup type state has certain thickness, and
So that the thickness of light-emitting diode encapsulation structure can not be effectively reduced, thus it is unable to satisfy light-emitting diode encapsulation structure now
The demand of slimming.
Summary of the invention
The present invention provides a kind of light emitting device, without existing bearing support, can have relatively thin package thickness
And meet the demand of slimming.
The present invention provides a kind of production method of light emitting device, to make above-mentioned light emitting device.
Light emitting device of the invention a comprising wavelength conversion layer, at least a luminescence unit and a reflection protection part.Wavelength
Conversion layer has a upper surface and a lower surface relative to each other.Luminescence unit has two electronic pads, and two electronic pads are located at hair
The same side of light unit.Luminescence unit configuration is on the upper surface of wavelength conversion layer and exposes two electronic pads.Reflection protection part packet
At least partially luminescent unit and partial wavelength conversion layer are covered, and exposes two electronic pads of luminescence unit.
In one embodiment of this invention, above-mentioned light emitting device a further include: photic zone configures on wavelength conversion layer
And between luminescence unit and reflection protection part.
In one embodiment of this invention, above-mentioned photic zone is also disposed between wavelength conversion layer and luminescence unit.
In one embodiment of this invention, above-mentioned reflection protection part also includes a reflecting surface contacted with luminescence unit.
In one embodiment of this invention, the reflecting surface of above-mentioned reflection protection part is a flat surface or a curved surface.
In one embodiment of this invention, above-mentioned reflection protection part also coats the one side of wavelength conversion layer completely.
In one embodiment of this invention, a bottom surface of above-mentioned reflection protection part and the lower surface of wavelength conversion layer are formed
One plane.
In one embodiment of this invention, the above-mentioned reflection protection part also at least side of covered section wavelength conversion layer
Face.
In one embodiment of this invention, the side of the above-mentioned partial wavelength conversion layer not coated by reflection protection part with
The one side of reflection protection part forms a side plane of light emitting device.
In one embodiment of this invention, above-mentioned wavelength conversion layer further includes one first not coated by reflection protection part
Exposure side and one second exposure side.First exposure side and the second exposure side are not parallel, and wavelength conversion layer is in first
Thickness at exposure side is different from thickness of the wavelength conversion layer at the second exposure side.
In one embodiment of this invention, above-mentioned wavelength conversion layer further includes a low concentration fluorescence coating and a high concentration
Fluorescence coating, high concentration fluorescence coating is between low concentration fluorescence coating and luminescence unit.
In one embodiment of this invention, above-mentioned reflection protection part is filled in the gap between two electronic pads.
In one embodiment of this invention, above-mentioned reflection protection part is fully filled with gap and reflection between two electronic pads
One surface of guard member is trimmed in a surface of two electronic pads.
In one embodiment of this invention, an above-mentioned at least luminescence unit is multiple luminescence units, wavelength conversion layer tool
There is an at least groove, between two luminescence units.
The production method of light emitting device of the invention comprising following steps.One wavelength conversion layer is provided；By multiple intervals
The luminescence unit of arrangement configures on wavelength conversion layer, and exposes two electronic pads of each luminescence unit；In wavelength conversion layer
Upper to form multiple grooves, wherein groove is between luminescence unit；A reflection protection part is formed on wavelength conversion layer and sending out
Between light unit and groove is filled up, wherein reflection protection part exposes the electronic pads of luminescence unit；And all are carried out along groove
Program is cut, to form multiple light emitting devices.
In one embodiment of this invention, the depth of above-mentioned each groove is at least the one of the thickness of wavelength conversion layer
Half.
In one embodiment of this invention, the production method of above-mentioned light emitting device, further includes: shine spaced
After unit configuration is on wavelength conversion layer, a photic zone is formed on wavelength conversion layer.
In one embodiment of this invention, the production method of above-mentioned light emitting device, further includes: shine spaced
Before unit configuration is on wavelength conversion layer, a photic zone is formed on wavelength conversion layer.
In one embodiment of this invention, above-mentioned reflection protection part also includes a reflecting surface contacted with luminescence unit.
In one embodiment of this invention, the reflecting surface of above-mentioned reflection protection part is a flat surface or a curved surface.
In one embodiment of this invention, above-mentioned wavelength conversion layer further includes a low concentration fluorescence coating and a high concentration
Fluorescence coating, luminescence unit configure on high concentration fluorescence coating.
Based on above-mentioned, due to the side surface of reflection protection part cladding luminescence unit of the invention, and the bottom of reflection protection part
Face trims the first bottom surface in the first electrode pad of luminescence unit and the second bottom surface of second electrode pad.Therefore, of the invention
Light emitting device does not need not only that luminescence unit is supported and fixed using existing bearing support, and can effective less package thickness
And cost of manufacture, meanwhile, the positive light extraction efficiency of luminescence unit can also be effectively improved.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and it is detailed to cooperate attached drawing to make
Carefully it is described as follows.
Detailed description of the invention
Fig. 1 is shown as a kind of schematic diagram of light emitting device of one embodiment of the invention；
Fig. 2 shows a kind of schematic diagrames of light emitting device for another embodiment of the present invention；
Fig. 3 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention；
Fig. 4 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention；
Fig. 5 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention；
Fig. 6 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention；
Fig. 7 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention；
Fig. 8 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention；
Fig. 9 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention；
Figure 10 A to Figure 10 D is shown as a kind of section signal of the production method of light emitting device of one embodiment of the invention
Figure；
Figure 11 A to Figure 11 C is shown as a kind of part step of the production method of light emitting device of another embodiment of the present invention
Rapid diagrammatic cross-section；
The section that Figure 12 A to Figure 12 E is shown as a kind of production method of light emitting device of another embodiment of the present invention shows
It is intended to；
Figure 13 A to Figure 13 D is shown as a kind of part step of the production method of light emitting device of another embodiment of the present invention
Rapid diagrammatic cross-section；
The section that Figure 14 A to Figure 14 E is shown as a kind of production method of light emitting device of another embodiment of the present invention shows
It is intended to；
The section that Figure 15 A to Figure 15 E is shown as a kind of production method of light emitting device of another embodiment of the present invention shows
It is intended to；
Figure 16 A to Figure 16 C is shown as the diagrammatic cross-section of the light emitting device of multiple embodiments of the invention；
Figure 17 A to Figure 17 E is shown as a kind of section signal of the production method of light emitting device of one embodiment of the invention
Figure；
Figure 18 A and Figure 18 B is shown as the diagrammatic cross-section of two kinds of light emitting devices of two embodiments of the invention；
The section that Figure 19 A to Figure 19 E is shown as a kind of production method of light emitting device of another embodiment of the present invention shows
It is intended to；
Figure 20 A is shown as the stereoscopic schematic diagram of the light emitting device of Figure 19 E；
Figure 20 B is shown as the diagrammatic cross-section of the line X-X along Figure 20 A；
Figure 21 A is shown as a kind of stereoscopic schematic diagram of light emitting device of another embodiment of the present invention；
Figure 21 B and Figure 21 C is shown as the diagrammatic cross-section of line X '-X ' and line Y '-Y ' along Figure 21 A.
Description of symbols:
10: substrate；
10a: two-sided glue film；
20: another substrate；
20a:UV glue film；
30: the first release films；
40: the second release films；
100a、100b、100c、100d、100e、100f、100g、100h、100i、100j、100k、100m、100n、
100p, 200a, 200b, 200c, 200d: light emitting device；
101: unit；
110a, 110b, 110c, 110c ', 220: luminescence unit；
112a, 112b, 112c, 222: upper surface；
113,113 ', 223: first electrode pad；
113a: the first bottom surface；
113b: the first side surface；
114a, 114b, 114c, 224: lower surface；
115,115 ', 225: second electrode pad；
115a: the second bottom surface；
115b: the second side surface；
116a, 116b, 116c: side surface；
120,120 ', 120c, 120d, 120m, 120n, 120p, 240,240a, 240b: reflection protection part；
121: edge；
122,122c, 122d: top surface；
124,124m, 124n: bottom surface；
130d, 130c: the first extending electrode；
140d, 140c: the second extending electrode；
150: encapsulation glue-line；
150c, 150c ', 230a, 230b, 230c: light transmission glue-line；
160,160 ': photic zone；
170,170 ', 170a, 210,210 ': wavelength convert glue-line；
171,171a: side edge；
172,172a, 214,214 ': high concentration fluorescent adhesive layer；
173: top surface；
173a: edge；
174,174a, 212,212 ', 212 ": low concentration fluorescent adhesive layer；
212a, 212a ', 212a ": flat part；
212b: protruding portion；
212b ': prominent sub-portion；
226: side surface；
232: concave surface；
234: convex surface；
236: inclined surface；
242,242a, 242b: reflecting surface；
A: unit；
C: groove；
C1, C1 ': groove；
C2 ': second groove；
D: depth；
E: extending electrode layer；
G: spacing；
H: difference in height；
L: cutting line；
M1: the first metal layer；
M2: second metal layer；
S: gap；
T: thickness；
T1: first thickness；
T2: second thickness；
W: width；
X-X, X '-X ', Y-Y, Y '-Y ': line.
Specific embodiment
Fig. 1 is shown as a kind of schematic diagram of light emitting device of one embodiment of the invention.It please refer to Fig. 1, in this implementation
In example, light emitting device 100a includes a luminescence unit 110a and a reflection protection part 120.Luminescence unit 110a has phase each other
Pair a upper surface 112a side surface 116a and the position of upper surface 112a and lower surface 114a are connect with a lower surface 114a, one
In on the 114a of lower surface and the first electrode pad 113 and a second electrode pad 115 that are separated from each other.Reflection protection part 120 coats
It the side surface 116a of luminescence unit 110a and exposes at least partly upper surface 112a and exposes first electrode pad 113 at least
At least partly one second bottom surface 115a of one first bottom surface 113a of part and second electrode pad 115.
More specifically, as shown in Figure 1, the upper surface 112a of the luminescence unit 110a of the present embodiment and reflection protection part
120 top surface 122 trims, one first bottom surface 113a of a bottom surface 124 of reflection protection part 120 and first electrode pad 113 with
And one second bottom surface 115a of second electrode pad 115 is trimmed, and reflection protection part 120 can cover or expose luminescence unit 110a
Lower surface 114a between first electrode pad 113 and a second electrode pad 115.In the present embodiment, luminescence unit 110a
Side surface 116a perpendicular to upper surface 112a and lower surface 114a, but be not limited thereto, and luminescence unit 110a is, for example,
Light emitting diode, the emission wavelength (including but not limited to) of light emitting diode is between 315 nanometers to 780 nanometers, and luminous two
Pole pipe includes but is not limited to ultraviolet light, blue and green light, yellow light, tangerine light or red light-emitting diode.
The reflectivity of reflection protection part 120 is at least more than 90%, that is to say, that the reflection protection part 120 of the present embodiment has
Have the characteristic of high reflectance, wherein the material of reflection protection part 120 be include one mixed with high reflection particle high molecular material, it is high
Reflective particle is such as, but not limited to be titanium dioxide (TiO2) powder, and high molecular material is for example not limited to epoxy resin or silicon
Resin.In addition, the material of the first electrode pad 113 of the luminescence unit 110a of the present embodiment and second electrode pad 115 is a metal
Material or metal alloy, e.g. gold, aluminium, tin, silver, bismuth, indium or combinations thereof, but not limited to this.
In the present embodiment, reflection protection part 120 coats the side surface 116a of luminescence unit 110a, and exposes the list that shines
First bottom surface 113a of the first electrode pad 113 of first 110a and the second bottom surface 115a of second electrode pad 115, light emitting device
100a does not need that luminescence unit 110a is supported and fixed using existing bearing support, and can effectively reduce package thickness and
Cost of manufacture, meanwhile, the forward direction of luminescence unit 110a can also be effectively improved by reflection protection part 120 with high reflectivity
Light extraction efficiency.
It should be noted that, following embodiments continue to use the element numbers and partial content of previous embodiment, wherein adopting herein
Be denoted by the same reference numerals identical or approximate element, and the explanation of same technique content can refer to previous embodiment, Xia Shushi
Applying example, it is no longer repeated.
Fig. 2 shows a kind of schematic diagrames of light emitting device for another embodiment of the present invention.It please also refer to Fig. 1 and Fig. 2,
Be in place of the main difference of light emitting device 100a in light emitting device 100b and Fig. 1 of the present embodiment: the present embodiment shines
The side surface 116b of unit 110b and non-perpendicular to upper surface 112b and lower surface 114b, luminescence unit 100b in the present embodiment
The surface area of upper surface 112b is greater than the surface area of lower surface 114b, angle e.g. Jie of side surface 116b and lower surface 114b
Between 95 degree to 150 degree.Upper surface 112b, the side surface 116b of the luminescence unit 110b of the present embodiment and lower surface 114b institute
Inverted trapezoidal is presented in the external form profile that defines, therefore can reduce the side luminescence unit 110b to light out, and the reflection protection of high reflectance
Part 120 can further effectively improve the positive light extraction efficiency of luminescence unit 110b.
Fig. 3 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention.It please also refer to Fig. 1 and Fig. 3,
Be in place of the main difference of light emitting device 100a in light emitting device 100c and Fig. 1 of the present embodiment: the present embodiment shines
Device 100c further includes one first extending electrode 130c and one second extending electrode 140c.First extending electrode 130c configuration exists
On the bottom surface 124 of reflection protection part 120, and it is electrically connected with first electrode pad 113.Second extending electrode 140c configuration is being reflected
On the bottom surface 124 of guard member 120, and it is electrically connected with second electrode pad 115.First extending electrode 130c and the second extending electrode
140c is separated from each other and covers at least partly bottom surface 124 of reflection protection part 120.
As shown in figure 3, the setting of the first extending electrode 130c and the second extending electrode 140c of the present embodiment are completely overlapped
Extend in first electrode pad 113 and second electrode pad 115, and towards the edge of reflection protection part 120.Certainly, do not show at other
In embodiment out, the setting of the first extending electrode and the second extending electrode can also partially overlap first electrode pad and the second electricity
Polar cushion, as long as the first extending electrode is electrically connected to first electrode pad with the second extending electrode and the setting of second electrode pad is
The present embodiment is intended to the range protected.In addition, the first extending electrode 130c and the second extending electrode 140c exposure of the present embodiment
The portion bottom surface 124 of reflection protection part 120 out.
In the present embodiment, the material of the first extending electrode 130c and the second extending electrode 140c can be identical or different respectively
In the first electrode pad 113 and second electrode pad 115 of luminescence unit 110a.When the first extending electrode 130c and the second extending electrode
When the material of 140c is identical to the first electrode pad 113 and second electrode pad 115 of luminescence unit 110a respectively, the first extending electrode
It can be seamless connection between 130c and first electrode pad 113, that is, be integrally formed structures, the second extending electrode 140c and the
It can be seamless connection between two electronic pads 115, that is, be integrally formed structures.When the first extending electrode 130c and second extends
When the material of electrode 140c is different from the first electrode pad 113 and second electrode pad 115 of luminescence unit 110a, first extends
The alloy that electrode 130c can be for example silver with the material of the second extending electrode 140c, gold, bismuth, tin, indium or above-mentioned material combine.
There is the first electrode pad 113 and second electrode with luminescence unit 110a due to the light emitting device 100c of the present embodiment
The the first extending electrode 130c and the second extending electrode 140c that pad 115 is electrically connected, therefore light emitting device can be effectively increased
The electrode contact surface product of 100c, this light emitting device 100c and other external circuits are assembled, can effectively mention in favor of subsequent
Height contraposition precision and packaging efficiency.For example, the area of the first extending electrode 130c is greater than the face of first electrode pad 113
Product, the area of the second extending electrode 140c are greater than the area of second electrode pad 115.
Fig. 4 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention.It please also refer to Fig. 3 and Fig. 4,
It is in place of the main difference of light emitting device 100c in light emitting device 100d and Fig. 3 of the present embodiment: the first of the present embodiment
The edge of extending electrode 130d and the edge of the second extending electrode 140d are trimmed in the edge of reflection protection part 120.
Fig. 5 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention.It please also refer to Fig. 1 and Fig. 5,
Be in place of the main difference of light emitting device 100a in light emitting device 100e and Fig. 1 of the present embodiment: the present embodiment shines
Device 100e further includes an encapsulation glue-line 150, wherein encapsulation glue-line 150 configures on the upper surface 112a of luminescence unit 110a,
To increase light extraction efficiency and improve light type.Encapsulation glue-line 150 can also extend at least partly upper surface of reflection protection part 120
On 122, the edge of encapsulation glue-line 150 can also be trimmed in the edge of reflection protection part 120.In addition, can also in encapsulation glue-line 150
With doped at least one wavelength conversion material, wavelength conversion material system is to be issued at least partly luminescence unit 110a
The wavelength convert of light is at other wavelength, and the material of wavelength conversion material includes fluorescent material, phosphor material, dyestuff, quantum
Point material and combinations thereof, wherein the partial size of wavelength conversion material is, for example, between 3 microns to 50 microns.In addition, packaging plastic
The oxide of high scattering power, e.g. titanium dioxide (TiO can also be doped in layer 1502) or silica (SiO2),
To increase light extraction efficiency.
In an embodiment of the present invention, luminescence unit includes but is not limited to ultraviolet light, blue and green light, yellow light, tangerine light or red
Light luminescence unit, and wavelength conversion material includes but is not limited to the wavelength of red, orange, crocus, yellow, yellow green or green
Transition material or combinations thereof, some or all of the light to be issued luminescence unit carry out wavelength convert.Wavelength convert
After light and the non-switched light of wavelength carry out light mixing, so that light emitting device issues dominant wavelength (dominant wavelenghth) one
The light of particular range, it is photochromic for example including but be not limited to red, orange, crocus, amber, yellow, yellow green or green,
Or the white light with specific opposite colour temperature is issued, the range of opposite colour temperature is, for example, between 2500K between 7000K, but not
As limit.
Fig. 6 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention.It please also refer to Fig. 6 and Fig. 4,
Be in place of the main difference of light emitting device 100d in light emitting device 100f and Fig. 4 of the present embodiment: the present embodiment shines
Device 100f further includes an encapsulation glue-line 150, wherein encapsulation glue-line 150 configures on the upper surface 112a of luminescence unit 110a,
To increase light extraction efficiency and improve light type.Encapsulation glue-line 150 can also extend at least partly upper surface of reflection protection part 120
On 122, the edge of encapsulation glue-line 150 can also be trimmed in the edge of reflection protection part 120, in addition, can also in encapsulation glue-line 150
With doped at least one wavelength conversion material, wavelength conversion material system is to be issued at least partly luminescence unit 110a
The wavelength convert of light is at other wavelength, and the material of wavelength conversion material includes fluorescent material, phosphor material, dyestuff, quantum
Point material and combinations thereof, wherein the partial size of wavelength conversion material is, for example, between 3 microns to 50 microns.In addition, packaging plastic
The oxide of high scattering power, e.g. titanium dioxide (TiO can also be doped in layer 1502) or silica (SiO2),
To increase light extraction efficiency.
It should be noted that in the embodiment of Fig. 4 and Fig. 6, the edge and the second extending electrode of the first extending electrode 130d
The edge of 140d is trimmed in the edge of reflection protection part 120, such to design the contact area that not only expand electrode, and
In processing procedure, reflection protection part 120 can encapsulate multiple luminescence unit 110a separately simultaneously, form patterned metal layer later
To be respectively formed the first extending electrode 130d and the second extending electrode 140d, is cut again later, make each light emitting device
The edge of the first extending electrode 130d of 100f and the edge of the second extending electrode 140d are trimmed in the side of reflection protection part 120
Edge so can effectively save processing time.
Fig. 7 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention.It please also refer to Fig. 7 and Fig. 5,
Be in place of the main difference of light emitting device 100e in light emitting device 100g and Fig. 5 of the present embodiment: the present embodiment shines
Device 100g further includes a photic zone 160, is configured on encapsulation glue-line 150, wherein the light transmittance of photic zone 160, e.g. greatly
In 50%.In the present embodiment, the material of photic zone 160 is, for example, glass, ceramics, resin, acryl or silica gel etc., purpose
It is that the external world can be led to by light guide caused by luminescence unit 110a, the luminous flux and light that can effectively increase light emitting device 100g take out
Rate, and it can effectively protect luminescence unit 110a also to avoid the invasion by extraneous aqueous vapor and oxygen.
Fig. 8 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention.It please also refer to Fig. 8 and Fig. 7,
Be in place of the main difference of light emitting device 100g in light emitting device 100h and Fig. 7 of the present embodiment: the present embodiment shines
The photic zone 160 ' of device 100h is disposed between the upper surface 110a of luminescence unit 110a and encapsulation glue-line 150.
Fig. 9 is shown as a kind of schematic diagram of light emitting device of another embodiment of the present invention.It please also refer to Fig. 9 and Fig. 6,
Be in place of the main difference of light emitting device 100f in light emitting device 100i and Fig. 6 of the present embodiment: the present embodiment shines
Device 100i further includes a photic zone 160, is configured on encapsulation glue-line 150, wherein the light transmittance of photic zone 160, e.g. greatly
In 50%.In the present embodiment, the material of photic zone 160 is, for example, glass, ceramics, resin, acryl or silica gel etc., purpose
It is that the external world can be led to by light guide caused by luminescence unit 110a, the luminous flux and light that can effectively increase light emitting device 100i take out
Rate, and it can effectively protect luminescence unit 110a also to avoid the invasion by extraneous aqueous vapor and oxygen.
It will match by taking light emitting device 100a, 100g, 100d, 100i in Fig. 1, Fig. 7, Fig. 4 and Fig. 9 as an example, and respectively below
10A to Figure 10 D, Figure 11 A to Figure 11 C, Figure 12 A to Figure 12 E and Figure 13 A to Figure 13 D are closed to the system of light emitting device of the invention
It is described in detail as method.
Figure 10 A to Figure 10 D is shown as a kind of section signal of the production method of light emitting device of one embodiment of the invention
Figure.Firstly, Figure 10 A is please referred to, by multiple luminescence unit 110a configuration on a substrate 10, wherein each luminescence unit 110a has
Have upper surface 112a relative to each other with lower surface 114a, connect upper surface 112a and lower surface 114a side surface 116a and
On the 114a of lower surface and the first electrode pad 113 that is separated from each other and second electrode pad 115.The of each luminescence unit 110a
One electronic pads 113 are arranged on the substrate 10 with second electrode pad 115.That is, the light-emitting surface of luminescence unit 110a, i.e., upper table
Face 112a is to be relatively distant from substrate 10.In the present embodiment, the material of substrate 10 is, for example, stainless steel, ceramics or other are non-conductive
Material.Luminescence unit 110a is, for example, light emitting diode, and the emission wavelength (including but not limited to) of light emitting diode is between 315
For nanometer between 780 nanometers, light emitting diode includes but is not limited to ultraviolet light, blue and green light, yellow light, tangerine light or red light-emitting
Diode.
Then, Figure 10 B is please referred to, forms a reflection protection part 120 ' on substrate 10, wherein reflection protection part 120 ' wraps
Cover each luminescence unit 110a.That is, reflection protection part 120 ' covers the upper surface of luminescence unit 110a completely and directly
112a, lower surface 114a and side surface 116a, and fill up the gap between first electrode pad 113 and second electrode pad 115.This
Place, the reflectivity of reflection protection part 120 ' is at least more than 90%, that is to say, that the reflection protection part 120 ' of the present embodiment can have
The characteristic of high reflectance, wherein the material of reflection protection part 120 ' includes the high molecular material of a doping high reflection particle, high anti-
Radion is such as, but not limited to be titanium dioxide (TiO2) powder, and high molecular material is for example not limited to epoxy resin or silicon tree
Rouge.
Then, Figure 10 C is please referred to, part reflection protection part 120 ' is removed, and forms reflection protection part 120, wherein reflecting
Guard member 120 exposes at least partly upper surface 112a of each luminescence unit 110a.At this point, each luminescence unit 110a's is upper
Surface 112a may be trimmed in the top surface of reflection protection part 120 122.Herein, the method packet of part reflection protection part 120 ' is removed
Include e.g. polishing or polishing processes.
Later, Figure 10 D is please referred to, a cutting process is carried out, to cut reflection protection part 120 along cutting line L, and is formed
Multiple light emitting device 100a being separated from each other, wherein each light emitting device 100a be respectively provided at least one luminescence unit 110a with
And reflection protection part 120, reflection protection part 120 coat the side surface 116a of luminescence unit 110a and expose it at least partially
Surface 112a.
Finally, refer again to Figure 10 D, substrate 10 is removed, with the reflection protection part 120 of each light emitting device 100a of exposure
Bottom surface 124, and expose at least partly the first bottom surface 113a and second of the first electrode pad 113 of each light emitting device 100a
At least partly the second bottom surface 115a of electronic pads 115.
Figure 11 A to Figure 11 C is shown as a kind of part step of the production method of light emitting device of another embodiment of the present invention
Rapid diagrammatic cross-section.The system of the production method of the light emitting device of the present embodiment and the light emitting device in above-mentioned Figure 10 A to Figure 10 D
Make to be in place of the main difference of method: between Figure 10 C and Figure 10 D the step of, imply that in removing part reflection protection part
After 120 ', and before carrying out cutting process, Figure 11 A is please referred to, forms encapsulation glue-line 150 in luminescence unit 110a and reflection
In guard member 120, to increase light extraction efficiency and improve light type.Herein, encapsulation glue-line 150 covers the upper surface of luminescence unit 110a
The top surface 122 of 112a and reflection protection part 120, and encapsulating can also be doped at least one wavelength conversion material in glue-line 150.
The explanation of wavelength conversion material please refers to previous embodiment.In addition, high scattering power can also be doped in encapsulation glue-line 150
Oxide, e.g. titanium dioxide (TiO2) or silica (SiO2), to increase light extraction efficiency.
Then, it please refers to Figure 11 B, forms a photic zone 160 on luminescence unit 110a and reflection protection part 120, wherein
Photic zone 160 is located on encapsulation glue-line 150, and covers encapsulation glue-line 150.For example, the light transmittance of photic zone 160 is greater than
50%.In this embodiment, the material of photic zone 160 is, for example, glass, ceramics, resin, acryl or silica gel etc., and purpose exists
In the external world can be led to by light guide caused by luminescence unit 110a, it can effectively increase and subsequent be formed by luminescence unit envelope photo structure
The luminous flux and light extraction efficiency of 100g, and also can effectively protect luminescence unit 110a and invaded to avoid by extraneous aqueous vapor and oxygen
It attacks.
Later, Figure 11 C is please referred to, a cutting process is carried out, along cutting line L cutting photic zone 160, encapsulation glue-line
150 and reflection protection part 120, and form multiple light emitting device 100g being separated from each other.Finally, refer again to Figure 11 C, remove
Substrate 10, with the bottom surface 124 of the reflection protection part 120 of each light emitting device 100g of exposure, wherein each light emitting device 100g
The bottom surface 124 of reflection protection part 120 exposes at least partly the first bottom surface 113a and the second electrode pad of first electrode pad 113
115 at least partly the second bottom surface 115a.In an alternative embodiment of the invention, it can also first remove substrate 10 and carry out a cutting journey again
Sequence.
The section that Figure 12 A to Figure 12 E is shown as a kind of production method of light emitting device of another embodiment of the present invention shows
It is intended to.It please refer to Figure 12 A, the light emitting device in the production method of the light emitting device of the present embodiment and above-mentioned Figure 10 A to Figure 10 D
Production method main difference in place of be: please refer to Figure 12 A, the luminescence unit 110a of the present embodiment is not by the first electricity
Polar cushion 113 and second electrode pad 115 contact substrate 10, but contact substrate 10 by its upper surface 112a.
Then, Figure 12 B is please referred to, forms a reflection protection part 120 ' on substrate, wherein reflection protection part cladding is each
Luminescence unit 110a.
Then, Figure 12 C is please referred to, part reflection protection part 120 ' is removed, to form reflection protection part 120, wherein reflecting
Guard member 120 exposes at least partly the first bottom surface 113a and second of the first electrode pad 113 of each luminescence unit 110a
At least partly the second bottom surface 115a of electronic pads 115.
Then, Figure 12 D is please referred to, a patterned metal layer is formed as extending electrode layer E, is located at each luminescence unit
On first bottom surface 113a of the first electrode pad 113 of 110a and on the second bottom surface 115a of second electrode pad 115.Herein, shape
Method at patterned metal layer is, for example, vapour deposition method, sputtering method, galvanoplastic or electroless plating method and light shield etching method.
Then, Figure 12 E is please referred to, a cutting process is carried out, along cutting wire cutting extending electrode layer E and reflection protection
Part 120, and form multiple light emitting device 100d being separated from each other.Each light emitting device 100d is respectively provided at least one list that shines
The reflection protection part 120 of the side surface 116a of first 110a, at least cladding luminescence unit 110a directly contact first electrode pad 113
The first extending electrode 130d and directly contact second electrode pad 115 the second extending electrode 140d.First extending electrode
130d and the second extending electrode 140d is separated from each other and exposes at least partly bottom surface 124 of reflection protection part 120.At this point, the
The area of one extending electrode 130d can be greater than the area of first electrode pad 113, and the area of the second extending electrode 140d can be greater than
The area of second electrode pad 115.The edge of first extending electrode 130d and the edge of the second extending electrode 140d are trimmed in reflection
The edge of guard member 120.
Finally, refer again to Figure 12 E, substrate 10 is removed, with the reflection protection part 120 of each light emitting device 100d of exposure
The upper surface 112a of top surface 122 and luminescence unit 110a, wherein the top surface of the reflection protection part 120 of each light emitting device 100g
122 trim the upper surface 112a in luminescence unit 110a.In an alternative embodiment of the invention, substrate 10 can also be first removed to carry out again
One cutting process.
Figure 13 A to Figure 13 D is shown as a kind of part step of the production method of light emitting device of another embodiment of the present invention
Rapid diagrammatic cross-section.The system of the production method of the light emitting device of the present embodiment and the light emitting device in above-mentioned Figure 12 A to Figure 12 E
Make to be in place of the main difference of method: between Figure 12 D and Figure 12 E the step of, imply that after forming extending electrode layer E,
And before carrying out cutting processing procedure, Figure 13 A is please referred to, provides an another substrate 20, and be arranged on extending electrode layer E.Herein,
The material of another substrate 20 is, for example, stainless steel, ceramics or other nonconducting materials.Then, it refer again to Figure 13 A, providing
After another substrate 20, substrate 10 is removed, to expose the top surface 122 of reflection protection part 120 and the upper table of luminescence unit 110a
Face 112a, wherein the upper surface 112a of each luminescence unit 110a is trimmed in the top surface of reflection protection part 120 122.
Then, it please refers to Figure 13 B, forms encapsulation glue-line 150 on luminescence unit 110a and reflection protection part 120, to increase
Add light extraction efficiency and improves light type.Herein, encapsulation glue-line 150 covers the upper surface 112a and reflection protection part of luminescence unit 110a
120 top surface 122, and encapsulating can also be doped at least one wavelength conversion material in glue-line 150.Wavelength conversion material is said
It is bright to please refer to previous embodiment.In addition, the oxide of high scattering power can also be doped in encapsulation glue-line 150, e.g.
Titanium dioxide (TiO2) or silica (SiO2), to increase light extraction efficiency.
Then, it please refers to Figure 13 C, forms a photic zone 160 on luminescence unit 110a and reflection protection part 120, wherein
Photic zone 160 is located on encapsulation glue-line 150, and covers encapsulation glue-line 150.For example, the light transmittance of photic zone 160 is greater than
50%.Herein, the material of photic zone 160 is, for example, glass, ceramics, resin, acryl or silica gel etc., and its object is to can shine
Light guide caused by unit 110a leads to the external world, and the light that can effectively increase the subsequent luminescence unit envelope photo structure 100i formed is logical
Amount and light extraction efficiency, and it can effectively protect luminescence unit 110a also to avoid the invasion by extraneous aqueous vapor and oxygen.
Later, Figure 13 D is please referred to, a cutting process is carried out, along cutting line L cutting photic zone 160, encapsulation glue-line
150, reflection protection part 120 and extending electrode layer E, and form multiple light emitting device 100i being separated from each other.Finally, refer again to
Figure 13 D removes another substrate 20, with the first extending electrode 130d and the second extending electrode of each light emitting device 100i of exposure
140d.In an alternative embodiment of the invention, it can also first remove substrate 20 and carry out a cutting process again.
The section that Figure 14 A to Figure 14 E is shown as a kind of production method of light emitting device of another embodiment of the present invention shows
It is intended to.It please refer to Figure 14 A, a wavelength convert glue-line 170 be provided, wherein wavelength convert glue-line 170 includes a low concentration fluorescence
Glue-line 174 and a high concentration fluorescent adhesive layer 172 on low concentration fluorescent adhesive layer 174.Herein, wavelength convert glue-line is formed
170 the step of is, for example, that the mode for first passing through admixture and mixing with colloid (is by liquid or molten state colloid and wavelength convert material
Material uniformly mixing, wavelength conversion material is, for example, that but not limited to this for fluorescent powder), to form wavelength convert glue-line 170, Zhi Houjing
170 a period of time of wavelength convert glue-line is set, after sedimentations in 24 hours, that is, forms the high concentration fluorescent adhesive layer that upper and lower level separates
172 with low concentration fluorescent adhesive layer 174.That is, the wavelength conversion layer 170 of the present embodiment is said as an example with two layers of glue-line
It is bright.Certainly, in other embodiments, Figure 14 A ' is please referred to, provides a wavelength convert glue-line 170 ', wherein wavelength convert glue-line
170 ' be single glue-line, this still falls within the present invention and is intended to the range protected.
Then, Figure 14 B is please referred to, by multiple spaced luminescence unit 110c configurations on wavelength convert glue-line 170,
Wherein there is each luminescence unit 110c a upper surface 112c relative to each other to connect upper surface 112c with a lower surface 114c, one
With the side surface 116c of lower surface 114c and on the 114c of lower surface and the first electrode pad 113 and one that is separated from each other
Two electronic pads 115, and the upper surface 112c of luminescence unit 110c is located at the high concentration fluorescent adhesive layer 172 of wavelength convert glue-line 170
On.Then, then to be respectively formed multiple materials include the light transmission glue-line 150c of light transmission colloid on wavelength convert glue-line 170 and extending
To the side surface 116c of luminescence unit 110c, wherein the side table of luminescence unit 110c is not completely covered by light transmission glue-line 150c
Face 116c, but as shown in Figure 14B, light transmission glue-line 150c is with curvature inclined-plane, and closer to the upper table of luminescence unit 110c
Face 112c, i.e., close to wavelength convert glue-line 170, the thickness of light transmission glue-line 150c is thicker.Herein, the purpose of light transmission glue-line 150c exists
In the position of fixed luminescence unit 110c.
It, can also be by spaced luminescence unit 110c it should be noted that in other embodiments, please refer to Figure 14 B '
Before configuration is on wavelength convert glue-line 170, a light transmission glue-line 150c ' Yu Bo of the uncured and material comprising light transmission colloid is formed
On long conversion glue-line 170.And configure luminescence unit 110c on wavelength convert glue-line 170 with being alternatively arranged after, light transmission glue
The extensible configuration of layer 150c ' is between luminescence unit 110c and high concentration fluorescent adhesive layer 172.
Then, Figure 14 B and Figure 14 C be please also refer to, after light transmission glue-line 150c ' solidification, carry out one first cutting process,
To cut wavelength convert glue-line 170, and multiple units 101 being separated from each other are formed, wherein each unit 101 is respectively provided at least
The wavelength convert glue-line 170 of one luminescence unit 110c and the upper surface 112c configured in luminescence unit 110c, and each list
The both sides of the edge 171 of the wavelength convert glue-line 170 of member 101 extend to except the side surface 116c of luminescence unit 110c.And then,
It refer again to Figure 14 C, by the configuration of spaced unit 101 on a substrate 10.In the present embodiment, the material example of substrate 10
Stainless steel, ceramics or other nonconducting materials in this way, it is herein and without restriction.
Later, it please refers to Figure 14 D, forms a reflection protection part 120c on substrate 10 and the hair of each unit 101 of cladding
The side surface 116c of light unit 110c and the edge 171 of wavelength convert glue-line 170.Herein, the formation of reflection protection part 120c
Mode is, for example, to be formed by mode for dispensing glue, and wherein reflection protection part 120c directly covers light transmission glue-line 150c and along saturating
Optical cement layer 150c is extended in the edge of wavelength convert glue-line 170 171.The first electrode pad 113 of luminescence unit 110c and
Two electronic pads 115 are not overlapped in reflection protection part 120c in the orthographic projection on substrate 10 in the orthographic projection on substrate 10.Herein, instead
Penetrating guard member 120c is, for example, a white adhesive layer.
Finally, please also refer to Figure 14 D and Figure 14 E, one second cutting process is carried out, to cut reflection protection part 120c,
And substrate 10 is removed, and forms multiple light emitting device 100j being separated from each other.Each light emitting device 100j is respectively provided at least
The side surface 116c of one luminescence unit 101 and cladding luminescence unit 110c are anti-with the edge 171 of wavelength convert glue-line 170
Penetrate guard member 120c.After removing substrate 10, a top surface of the reflection protection part 120c of each light emitting device 100j of exposure
A top surface 173 of 122c and wavelength convert glue-line 170.In an alternative embodiment of the invention, substrate 10 can also be first removed to carry out again
One cutting process.So far, the production of light emitting device 100j is completed.
In structure, Figure 14 E refer again to, the light emitting device 100j of the present embodiment includes luminescence unit 110c, reflection guarantor
Guard 120c, light transmission glue-line 150c and wavelength convert glue-line 170.Wavelength convert glue-line 170 is configured luminescence unit 110c's
On the 112c of upper surface, wherein wavelength convert glue-line 170 includes low concentration fluorescent adhesive layer 174 and high concentration fluorescent adhesive layer 172, and
High concentration fluorescent adhesive layer 172 is between low concentration fluorescent adhesive layer 174 and luminescence unit 110c, and wavelength convert glue-line 170
Edge 171 extends to except the side surface 116c of luminescence unit 110c.Herein, low concentration fluorescent adhesive layer 174 can be used to as saturating
Light protection layer effectively prevent aqueous vapor to penetrate into increase water-gas transfer path.Light transmission glue-line 150c is configured luminescence unit 110c's
Position between side surface 116c and reflection protection part 120c, to fixed luminescence unit 110c.The reflection protection of the present embodiment
Part 120c is also to be coated on wavelength convert glue-line along the light transmission glue-line 150c of the side surface 116c of covering luminescence unit 110c
170 edge 171, therefore the light emitting device 100j of the present embodiment does not need that hair is supported and fixed using existing bearing support
Light unit 110c, and package thickness and cost of manufacture can be effectively reduced.Meanwhile it can also be protected by reflection with high reflectivity
Guard 120c effectively improves the positive light extraction efficiency of luminescence unit 110c.Herein, the top surface 122c tool of reflection protection part 120c
Body is trimmed in the top surface of wavelength convert glue-line 170 173.
The section that Figure 15 A to Figure 15 E is shown as a kind of production method of light emitting device of another embodiment of the present invention shows
It is intended to.It please refer to Figure 15 A, one first release film 30 be provided, then, provide a wavelength convert glue-line 170a in the first release film
On 30, wavelength convert glue-line 170a can be simple layer glue-line or multilayer glue-line, in the present embodiment, wavelength convert glue-line
170a be include high concentration fluorescent adhesive layer that a low concentration fluorescent adhesive layer 174a and one is located on low concentration fluorescent adhesive layer 174a
172a.Herein, the step of forming wavelength convert glue-line 170a is, for example, to first pass through the mode that admixture is mixed with colloid to form wavelength
Glue-line 170a is converted, stands wavelength convert glue-line 170a for a period of time later, such as after 24 hours, that is, the low concentration for forming separation is glimmering
Optical cement layer 172a and high concentration fluorescent adhesive layer 174a.Herein, the first release film 30 is, for example, two-sided glue film.
Then, it refer again to Figure 15 A, by multiple spaced luminescence unit 110c configurations in wavelength convert glue-line 170A
On, wherein there is each luminescence unit 110c a upper surface 112c relative to each other to connect upper surface with a lower surface 114c, one
The side surface 116c of 112c and lower surface 114c and positioned at the 114c of lower surface on and the first electrode pad 113 that is separated from each other and
One second electrode pad 115, and the upper surface 112c of luminescence unit 110c is located at the high concentration fluorescent glue of wavelength convert glue-line 170a
On layer 172a.Herein, adjacent two luminescence units 110c has a spacing G, and this spacing G is, for example, 700 microns.Then, then divide
Multiple light transmission glue-line 150c are not formed on the side surface 116c of luminescence unit 110c, and wherein there is no complete by light transmission glue-line 150c
The side surface 116c of luminescence unit 110c is covered, but as shown in fig. 15b, light transmission glue-line 150c is with curvature inclined-plane, and more
Close to the upper surface 112c of luminescence unit 110c, the thickness of light transmission glue-line 150c is thicker.Herein, the purpose of light transmission glue-line 150c exists
In the position of fixed luminescence unit 110c.
Then, Figure 15 B is please referred to, one first cutting process is carried out, with cutting of high-concentration fluorescent adhesive layer 172a and part
Low concentration fluorescent adhesive layer 174a, and form multiple groove C.As shown in fig. 15b, first time cutting process is not completely switched off wave
Long conversion glue-line 170a, but only cutting high concentration fluorescent adhesive layer 172a and cut portion low concentration fluorescent adhesive layer 174a.
Herein, the width W of groove C is, for example, 400 microns, and the depth D of groove C is, for example, the thickness T of wavelength convert glue-line 170a
Half.The thickness T of wavelength convert glue-line 170a is, for example, 140 microns, and the depth D of groove C is, for example, 70 microns.At this point, ditch
The position of slot C and the position of encapsulation glue-line 150c do not interfere.
Later, it please refers to Figure 15 C, forms a reflection protection part 120d in low concentration fluorescent adhesive layer 174a on and cladding is luminous
The side surface 116c of unit 110c, wherein reflection protection part 120d fills up groove C and exposes the first electricity of luminescence unit 110c
Polar cushion 113 and second electrode pad 115.Herein, reflection protection part 120d is, for example, a white adhesive layer.
Finally, please also refer to Figure 15 D and Figure 15 E, the first release layer 30 is removed, and provide one second release layer 40, made
The first electrode pad 113 of luminescence unit 110c contacts the second release film 40 with second electrode pad 115.Herein, the second release layer 40
E.g. UV glue or double-sided adhesive.Then, one second cutting process is carried out, with the extending direction of C along groove (i.e. in schema 15D
The extending direction of cutting line L) and reflection protection part 120d and low concentration fluorescent adhesive layer 174a are cut, and form multiple be separated from each other
Light emitting device 100k.Each light emitting device 100k is respectively provided at least one luminescence unit 110c, configuration in luminescence unit
The reflection protection of the side surface 116c of the wavelength convert glue-line 170a and cladding luminescence unit 110c of the upper surface 112c of 110c
Part 120d.In the present embodiment, wavelength convert glue-line 170a is comprising high concentration fluorescent adhesive layer 172a and low concentration fluorescent adhesive layer
174a, herein, the edge 171a of the low concentration fluorescent adhesive layer 174a of wavelength convert glue-line 170a are trimmed in reflection protection part 120d
Edge 121, and reflection protection part 120d also coats the edge 173a of high concentration fluorescent adhesive layer 172a.Remove the second releasing layer
40, and complete the production of light emitting device 100k.
In structure, Figure 15 E refer again to, the light emitting device 100k of the present embodiment includes luminescence unit 110c, reflection guarantor
Guard 120d, light transmission glue-line 150c and wavelength convert glue-line 170a.Wavelength convert glue-line 170a is configured in luminescence unit 110c
Upper surface 112c on, wherein wavelength convert glue-line 170a includes low concentration fluorescent adhesive layer 174a and high concentration fluorescent adhesive layer
172a, and high concentration fluorescent adhesive layer 172a is between low concentration fluorescent adhesive layer 174a and luminescence unit 110c, and wavelength convert
The edge 171a of glue-line 170a is extended to except the side surface 116c of luminescence unit 110c.Herein, low concentration fluorescent adhesive layer 174 can
For effectivelying prevent aqueous vapor to penetrate into increase water-gas transfer path as light transmission protective layer.Light transmission glue-line 150c configuration is shining
Position between the side surface 116c and reflection protection part 120d of unit 110c, to fixed luminescence unit 110c.The present embodiment
Reflection protection part 120d be along covering luminescence unit 110c side surface 116c light transmission glue-line 150c and be also coated on wave
The both sides of the edge 173a of the high concentration fluorescent adhesive layer 172a of long conversion glue-line 170a, therefore the light emitting device 100k of the present embodiment is not
It needs that luminescence unit 110c is supported and fixed using existing bearing support, and package thickness can be effectively reduced and be fabricated to
This.Meanwhile light can also be gone out by reflection protection part 120d with high reflectivity to effectively improve the forward direction of luminescence unit 110c
Efficiency.In addition, the low concentration fluorescent adhesive layer 174a covering reflection protection part 120d of the wavelength convert glue-line 170a of the present embodiment
One top surface 122d.That is, the edge 173a of the high concentration fluorescent adhesive layer 172a of the wavelength convert glue-line 170a of the present embodiment
With not trimming for the edge 171a of low concentration fluorescent adhesive layer 174a.
In other embodiments, Figure 16 A, the light emitting device in the light emitting device 100m and Figure 14 E of the present embodiment are please referred to
100j is similar, and be in place of difference: the reflection protection part 120m of the present embodiment is fully filled with first electrode pad 113 and second electrode
Gap S between pad 114 and be completely covered first electrode pad 113 one first side surface 113b and second electrode pad 115 one
Second side surface 115b, and a bottom surface 124m of reflection protection part 120m trims the first bottom surface 113a in first electrode pad 113
With the second bottom surface 115a of second electrode pad 115.In this way, which the feelings of light leakage can be generated to avoid the bottom of light emitting device 100m
Condition.In addition, reflection protection part 120m is then coated on the both sides of the edge of wavelength convert glue-line 170a completely.Furthermore since reflection is protected
The covering property of guard 120m it is good and have preferable structural strength, therefore the light emitting device 100m of the present embodiment do not need using
Existing bearing support supports and fixes luminescence unit 110c, and can effectively reduce package thickness and cost of manufacture.
Either, Figure 16 B is please referred to, the light emitting device 100k in the light emitting device 100n and Figure 16 A of the present embodiment is similar,
Be in place of difference: the reflection protection part 120n of the present embodiment is filled between first electrode pad 113 and second electrode pad 114
Gap S but be not completely filled with, and reflection protection part 120n only cover part the first side surface 113b of first electrode pad 113 with
The second side surface of part 115b of second electrode pad 115.In other words, a bottom surface 124n and first electrode of reflection protection part 120n
There is a height difference H between first bottom surface 113a of pad 113 and the second bottom surface 115a of second electrode pad 115.Either, please join
Figure 16 C is examined, the light emitting device 100n in the light emitting device 100p and Figure 16 B of the present embodiment is similar, is in place of difference: this implementation
First electrode pad 113 ' and second electrode pad 115 ' are embodied as more metal layers in example, if any the first metal layer M1 and the second gold medal
Belong to layer M2 to be formed, but is not limited thereto.First electrode pad 113 ' and second electrode pad is completely covered in reflection protection part 120p
The side surface of 115 the first metal layer M1, but it is not completely covered the second of first electrode pad 113 ' and second electrode pad 115 '
The side surface of metal layer M2.In short, luminescence unit 110c, 110c of light emitting device 100m, 100n, 100p ' first electrode
Pad 113,113 ' and second electrode pad 115,115 ' can be single metal layer or more metal layers, with this and it is without restriction.
Figure 17 A to Figure 17 E is shown as a kind of section signal of the production method of light emitting device of one embodiment of the invention
Figure.The production method of light emitting device about the present embodiment provides a wavelength convert glue-line 210, wave firstly, please referring to Figure 17 A
Long conversion glue-line 210 can be simple layer glue-line or multilayer glue-line, and the wavelength convert glue-line 210 in the present embodiment includes one low dense
Spend fluorescent adhesive layer 212 and a high concentration fluorescent adhesive layer 214 on low concentration fluorescent adhesive layer 212.Herein, wavelength is formed to turn
The step of changing glue-line 210 is, for example, to first pass through the mode that admixture is mixed with colloid (will not be shown by fluorescent powder (not shown) and silica gel
Wavelength convert glue material bed of material (not shown) is formed by after evenly mixing out) to be layed on a release film (not shown), it
Afterwards stand the wavelength convert glue material bed of material for a period of time, such as after 24 hours because fluorescent powder with silica gel density variation and form tool
There are a low concentration fluorescent adhesive layer 212 of separation and the wavelength convert glue-line 210 of a high concentration fluorescent adhesive layer 214, middle and high concentration
Fluorescent adhesive layer 214 can be deposited in the lower section of low concentration fluorescent adhesive layer 212, and high concentration fluorescent adhesive layer 214 is, for example, yellow, low dense
Degree fluorescent adhesive layer 212 is e.g. transparent, and the thickness of low concentration fluorescent adhesive layer 212 is preferably greater than high concentration fluorescent adhesive layer 214
Thickness, in one embodiment, the ratio of thickness can be between 1 to 200, but is not limited thereto.
Then, it refer again to Figure 17 A, a two-sided glue film 10a, the low concentration fluorescent adhesive layer of wavelength convert glue-line 210 be provided
212 configurations are on two-sided glue film 10a, to convert the position of glue-line 210 come fixed wave length by two-sided glue film 10a.Then, it carries out
One first cutting process to be cut to part low concentration fluorescent adhesive layer 212 from high concentration fluorescent adhesive layer 214, and forms multiple ditches
Slot C1.Herein, the depth of each groove C1 is at least the half of the thickness of wavelength convert glue-line 210.For example, as wavelength turns
Change glue-line 210 with a thickness of 240 microns, and the depth of groove C1 then be, for example, 200 microns.At this point, groove C1 can turn wavelength
The low concentration fluorescent adhesive layer 212 for changing glue-line 210 divides into the protruding portion that a flat part 212a and one is located on flat part 212a
212b, and high concentration fluorescent adhesive layer 214 is then located on protruding portion 212b.
Then, Figure 17 B is please referred to, by multiple spaced configurations of luminescence unit 220 on wavelength convert glue-line 210,
Wherein there is each luminescence unit 220 upper surface 222 relative to each other upper surface 222 is connect with a lower surface 224, one under
The side surface 226 on surface 224 and on lower surface 224 and the first electrode pad 223 being separated from each other and a second electrode
Pad 225.The upper surface 222 of luminescence unit 220 is located on the high concentration fluorescent adhesive layer 214 of wavelength convert glue-line 210, to increase light
Extraction efficiency and improvement light type.Luminescence unit 220 is divided into multiple unit A by groove C1, in the present embodiment in each unit A extremely
It less include two luminescence units 220 (two luminescence units 220 are schematically illustrated in Figure 17 B).Each luminescence unit 220 is, for example,
For light-emitting diode chip for backlight unit of the emission wavelength between 315 nanometers to 780 nanometers, and light-emitting diode chip for backlight unit includes but unlimited
In ultraviolet light, blue and green light, yellow light, tangerine light or red light-emitting diode chip.
Then, it refer again to Figure 17 B, form a light transmission glue-line 230a on wavelength convert glue-line 210 and extending configuration and exist
On the side surface 226 of luminescence unit 220.As seen in this fig. 17b, light transmission glue-line 230a by each luminescence unit 220 lower surface 224
Toward 222 progressive additive of upper surface, and light transmission glue-line 230a has a concave surface relative to the side surface 226 of luminescence unit 220
232, but be not limited thereto.Herein, the purpose of light transmission glue-line 230a is other than being the position of fixed luminescence unit 220,
Because light transmission glue-line 230a is that a light-transmitting materials and refractive index are greater than 1, therefore the light that can also increase chip sides takes out effect.
Then, Figure 17 C is please referred to, form a reflection protection part 240 between luminescence unit 220 and fills up groove C1,
Middle reflection protection part 240 is formed on wavelength convert glue-line 210 and coats each unit A and fills up groove C1.Reflection protection part
240 expose lower surface 224, first electrode pad 223 and the second electrode pad 225 of each luminescence unit 220.Herein, it reflects
The reflectivity of guard member 240 is at least more than 90%, and reflection protection part 240 is, for example, a white adhesive layer.The shape of reflection protection part 240
It is, for example, by mode for dispensing glue at mode, wherein reflection protection part 240 directly covers light transmission glue-line 230a and along light transmission glue
Layer 230a is extended on the edge of high concentration fluorescent adhesive layer 214 and filling up groove C1.At this point, the first of luminescence unit 220
Electronic pads 223 are not overlapped in reflection protection part 240 in double-sided adhesive in the orthographic projection on two-sided glue film 10a with second electrode pad 225
Orthographic projection on film 10a.
Then, refer again to Figure 17 C, carry out one second cutting process, with from reflection protection part 240 along groove C1 and pass through
Low concentration fluorescent adhesive layer 212 is worn, and forms multiple light emitting device 200a being separated from each other.At this point, as shown in Figure 17 C, Mei Yidan
The wavelength convert glue-line 210 that two luminescence units 220 in first A are contacted is continuously, to imply that these luminescence units 220 have
Same light-emitting surface, therefore the light that luminescence unit 220 is issued can carry out leaded light by transparent low concentration fluorescent adhesive layer 212,
It may make the light emitting device 200a of the present embodiment that there is preferable uniformity of luminance.
Later, Figure 17 C and Figure 17 D be please also refer to, after carrying out the second cutting process, one need to be carried out and turn over film program.It is first
First, first provide a UV glue film 20a in luminescence unit 220 first electrode pad 223 and second electrode pad 225 on, first to fix this
The relative position of a little light emitting device 200a.Then, it removes two-sided glue film 10a and exposes the low concentration of wavelength convert glue-line 210
Fluorescent adhesive layer 212.Finally, please refer to Figure 17 E, removes UV glue film 20a and expose the first electrode pad 223 of luminescence unit 220
With second electrode pad 225.So far, the production of light emitting device 200a is completed.It should be noted that for the sake of for convenience of explanation, figure
17E shown schematically only shows a light emitting device 200a.
In structure, refer again to Figure 17 E, light emitting device 200a include multiple luminescence units 220 (in Figure 17 E schematically
Two luminescence units 220 are shown), a wavelength convert glue-line 210 and a reflection protection part 240.Each luminescence unit 220 has
A upper surface 222 relative to each other connect with a lower surface 224, one upper surface 222 and lower surface 224 side surface 226 and
On lower surface 224 and the first electrode pad 223 and a second electrode pad 225 that are separated from each other.Wavelength convert glue-line 210 is matched
It sets on the upper surface of luminescence unit 220 222, and wavelength convert glue-line 210 includes that a low concentration fluorescent adhesive layer 212 and one is high
Concentration fluorescent adhesive layer 214.There is low concentration fluorescent adhesive layer 212 a flat part 212a and one to be located at the protrusion on flat part 212a
Portion 212b.High concentration fluorescent adhesive layer 214 configures the middle and high concentration fluorescent adhesive layer 214 between upper surface 222 and protruding portion 212b
It covers protruding portion 212b and contacts the upper surface 222 of luminescence unit 220.Luminescence unit 220 is alternatively arranged and exposes subwave
Long conversion glue-line 210.Reflection protection part 240 coats the side surface 226 of each luminescence unit 220 and covering 220 institute of luminescence unit
The wavelength convert glue-line 210 exposed.Reflection protection part 240 exposes the 224, first electricity of lower surface of each luminescence unit 220
Polar cushion 223 and second electrode pad 225.The edge of reflection protection part 240 is trimmed in the flat part of low concentration fluorescent adhesive layer 212
The edge of 212a.
Due to these luminescence units 220 in the light emitting device 200a of the present embodiment only with a wavelength convert glue-line 210
It is in contact, implies that these luminescence units 220 have same light-emitting surface, and the edge and reflection protection of low concentration fluorescent adhesive layer 212
The edge of part 240 trims.Therefore, the light that luminescence unit 220 is issued passes through the guiding of low concentration fluorescent adhesive layer 212, may make
The light emitting device 200a of the present embodiment can have biggish light-emitting area and preferable uniformity of luminance.In addition, reflection protection part
The side surface 226 of 240 cladding luminescence units 220, and reflection protection part 240 exposes the first electrode pad 223 of luminescence unit 220
And second electrode pad 225.Therefore, the light emitting device 200a of the present embodiment do not need to support using existing bearing support and
Fixed luminescence unit 220, can effectively less package thickness and cost of manufacture, meanwhile, luminescence unit 220 can also be effectively improved
Positive light extraction efficiency.
It is noted that the present embodiment does not limit the structure kenel of light transmission glue-line 230a, although shown by Figure 17 E
Light transmission glue-line 230a is embodied as having concave surface 232 relative to the side surface 226 of luminescence unit 220.In other words, reflection is protected
Guard 240 includes also a reflecting surface 242 contacted with luminescence unit 220, and this reflecting surface 242 is embodied as curved surface.But at it
In his embodiment, Figure 18 A is please referred to, the light emitting device 200a in the light emitting device 200b and Figure 17 E of the present embodiment is similar, difference
Place is: light transmission glue-line 230b has a convex surface 234 relative to the side surface 226 of each luminescence unit 220, can be effective
Increase luminescence unit 220 laterally goes out light, and by the configuration of cooperation wavelength convert glue-line 210, can also increase light emitting device
The lighting area of 200b.In other words, the reflecting surface 242a of reflection protection part 240a is embodied as curved surface.Either, figure is please referred to
Light emitting device 200a in 18B, the light emitting device 200c and Figure 17 E of the present embodiment is similar, is in place of difference: light transmission glue-line
230c has an inclined surface 236 relative to the side surface 226 of each luminescence unit 220.In other words, reflection protection part 240b
Reflecting surface 242b is embodied as plane.
It should be noted that, following embodiments continue to use the element numbers and partial content of previous embodiment, wherein adopting herein
Be denoted by the same reference numerals identical or approximate element, and the explanation of same technique content can refer to previous embodiment, Xia Shushi
Applying example, it is no longer repeated.
The section that Figure 19 A to Figure 19 E is shown as a kind of production method of light emitting device of another embodiment of the present invention shows
It is intended to.The production of the production method of the light emitting device 200d of the present embodiment and the light emitting device 200a in above-mentioned Figure 17 A to Figure 17 E
It is in place of the main difference of method: please refers to Figure 19 A, when carrying out the first cutting process, also formed multiple glimmering from high concentration
Optical cement layer 214 ' is cut to the second groove C2 ' of part low concentration fluorescent adhesive layer 212 '.As shown in Figure 19 A, groove C1 ' and second
The position of groove C2 ' is in being staggered, wherein the depth of each groove C1 ' is at least the one of the thickness of wavelength convert glue-line 210 '
Half, and the depth of each second groove C2 ' is identical as the depth of each groove C1 '.For example, such as wavelength convert glue-line 210 '
With a thickness of 240 microns, and the depth of groove C1 ' and the depth of second groove C2 ' then be, for example, 200 microns, but not with
This is limited.At this point, the flat part 212a ' of low concentration fluorescent adhesive layer 212 ' have a thickness T, preferably, thickness T be, for example, between
Between 20 microns to 50 microns.Second groove C2 ' is by the protrusion of the low concentration fluorescent adhesive layer 212 ' in wavelength convert glue-line 210 '
Portion divides into two prominent sub-portion 212b ', and high concentration fluorescent adhesive layer 214 ' is located at these and protrudes on sub-portion 212b '.
Then, Figure 19 B is please referred to, by the configuration of spaced luminescence unit 220 on wavelength convert glue-line 210 ', wherein
Second groove C2 ' is located between two luminescence units 220 in each luminescence unit unit A, and luminescence unit 220 is respectively configured
On prominent sub-portion 212b ', and the upper surface 222 of luminescence unit 220 directly contacts high concentration fluorescent adhesive layer 214 '.Preferably,
The length of each prominent sub-portion 212b ' is greater than 1 and less than 1.35, also with the ratio of the length of corresponding luminescence unit 220
It is to say, the edge of the protrusion sub-portion 212b ' of low concentration fluorescent adhesive layer 212 ' is outside the edge of luminescence unit 220, and high concentration is glimmering
The edge of optical cement layer 214 ' also extends to outside the edge of luminescence unit 220, can effectively increase the light-emitting area of luminescence unit 220.
Then, a light transmission glue-line 230a is respectively formed on the side surface of luminescence unit 220 226, and wherein light transmission glue-line 230a is only configured
It on the side surface of luminescence unit 220 226 and extends on the high concentration fluorescent adhesive layer 214 ' of wavelength convert glue-line 210 ', simultaneously
Do not extend configuration on low concentration fluorescent adhesive layer 212 '.
Then, with above-mentioned Figure 17 C, Figure 17 D and Figure 17 E the step of, please first examine Figure 19 C, that is, formed reflection protection part 240 in
It on wavelength convert glue-line 210 ' and coats each unit A and fills up groove C1 ' and second groove C2 ', then, carry out one second and cut
Cut program, with from reflection protection part 240 along groove C1 ' and run through low concentration fluorescent adhesive layer 212 ', and formed and multiple divided each other
From light emitting device 200d.Then, Figure 19 C and Figure 19 D be please also refer to, after carrying out the second cutting process, one need to be carried out and turned over
Film program.Firstly, first provide UV glue film 20a in luminescence unit 220 first electrode pad 223 and second electrode pad 225 on, with elder generation
Fix the relative position of these light emitting devices 200a.Then, it removes two-sided glue film 10a and exposes wavelength convert glue-line 210 '
Low concentration fluorescent adhesive layer 212 '.Finally, please referring to Figure 19 E, first for removing UV glue film 20a and exposing luminescence unit 220 is electric
On polar cushion 223 and second electrode pad 225.So far, the production of light emitting device 200d is completed.It should be noted that saying for convenience
For the sake of bright, Figure 19 E shown schematically only shows a light emitting device 200d.
It please also refer to Figure 19 E, Figure 20 A and Figure 20 B, wherein it should be noted that, it is along Figure 20 A shown by Figure 19 E
In line Y-Y shown by diagrammatic cross-section.Light emitting device 200a phase in light emitting device 200d and Figure 17 E of the present embodiment
Seemingly, be in place of difference: the wavelength convert glue-line 210 ' exposed between two luminescence units 220 also has second groove
C2 ', wherein second groove C2 ' extends to part low concentration fluorescent adhesive layer 212 ' from high concentration fluorescent adhesive layer 214 '.That is,
Two luminescence units 220 are disposed on a continuous wavelength convert glue-line 210 ', therefore luminescence unit 220 is with same
Light-emitting surface, and the edge of low concentration fluorescent adhesive layer 212 ' and the edge of reflection protection part 240 trim.Therefore, 220 institute of luminescence unit
The light of sending passes through the guiding of low concentration fluorescent adhesive layer 212 ', and it is biggish to may make that the light emitting device 200d of the present embodiment can have
Light-emitting area and preferable uniformity of luminance.
In particular, being cut when carrying out first time cutting process in the direction of Figure 20 A middle line X-X and the direction of line Y-Y
Depth it is substantially the same.That is, Figure 20 B is please referred to, and on the sectional view in the online direction X-X, low concentration fluorescent adhesive layer
212 ' flat part 212a ' has a thickness T, please refers to Figure 19 E, and on the sectional view in the online direction Y-Y, low concentration fluorescent glue
The flat part 212a ' of layer 212 ' equally has thickness T.Preferably, thickness T is, for example, between 20 microns to 50 microns.
Certainly, in other embodiments, when carrying out first time cutting process, in the cutting of different directions, low concentration
The flat part 212a ' of fluorescent adhesive layer 212 ' can also have different thickness.Figure 21 A is shown as one kind of another embodiment of the present invention
The stereoscopic schematic diagram of light emitting device.Figure 21 B and Figure 21 C is shown as the section of line X '-X ' and line Y '-Y ' along Figure 21 A
Schematic diagram.It please also refer to Figure 21 A, Figure 21 B and Figure 21 C, when carrying out first time cutting process, in the side of Figure 21 A middle line X '-X '
It is different to the depth cut from the direction of line Y '-Y ', and wavelength convert glue-line 210 ' is caused to further include not by the reflection protection
The one first exposure side that part 240 coats and one second exposure side, the first exposure side and the second exposure side are not parallel, and
Thickness of the wavelength convert glue-line 210 ' at the first exposure side is different from wavelength convert glue-line 210 ' at the second exposure side
Thickness.Specifically, the flat part 212a " of low concentration fluorescent adhesive layer 212 " is in thick with one first on the direction of line X '-X '
Spend T1, and the flat part 212a " of low concentration fluorescent adhesive layer 212 " is in having a second thickness T2 on the direction D2 of Y '-Y ', and the
One thickness T1 is different from second thickness T2.Preferably, first thickness T1 is, for example, between 50 microns to 200 microns and the
Two thickness T2 are, for example, between 20 microns to 50 microns.
Due to the present embodiment low concentration fluorescent adhesive layer 212 " flat part 212a " on the direction of X '-X ' with Y '-Y's '
Different first thickness T1 and second thickness T2 is respectively provided on direction, thus can effectively reduce adjacent two luminescence unit 220 it
Between the case where brightness reduces is generated because of blanking bar, and then the uniformity of luminance of light emitting device 200e can be improved.In addition, being worth mentioning
, come with the direction of line Y '-Y ' for example, working as the thickness T2 of the flat part 212a " of low concentration fluorescent adhesive layer 212 " ' for example
When being improved by 0.04 millimeter (mm) to 0.2 millimeter (mm), the light-emitting angle of luminescence unit 220 can also be increased by original 120 degree
To 130 degree, imply that the light-emitting angle of luminescence unit 220 can increase by 10 degree.In short, the plate of low concentration fluorescent adhesive layer 212 " '
The thickness size of portion 212a " and the light-emitting angle of luminescence unit 220 are positively correlated.
In conclusion due to the side surface of reflection protection part cladding luminescence unit of the invention, and the bottom of reflection protection part
Face exposes the first bottom surface of the first electrode pad of luminescence unit and the second bottom surface of second electrode pad.Therefore, of the invention
Light emitting device does not need not only that luminescence unit is supported and fixed using existing bearing support, and can effectively reduce package thickness
And cost of manufacture, meanwhile, the positive light extraction efficiency of luminescence unit can also be effectively improved.
Further, since these luminescence units in light emitting device of the invention are only in contact with a wavelength convert glue-line,
Imply that these luminescence units have the same light-emitting surface, and the edge of low concentration fluorescent adhesive layer and the edge of reflection protection part are cut
Together.Therefore, the light that luminescence unit is issued passes through the guiding of low concentration fluorescent adhesive layer, may make light emitting device of the invention that can have
There are biggish light emitting angle and preferable uniformity of luminance.In addition, side surface and the exposure of reflection protection part cladding luminescence unit
The first electrode pad and second electrode pad of luminescence unit out.Therefore, light emitting device of the invention does not need to hold using existing
Carry bracket and support and fix luminescence unit, can effectively less package thickness and cost of manufacture, meanwhile, can also effectively improve hair
The positive light extraction efficiency of light unit.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (7)
1. a kind of production method of light emitting device characterized by comprising
Wavelength conversion layer is provided；
Multiple luminescence units are configured on the wavelength conversion layer with being alternatively arranged, and expose two of each luminescence unit
Electronic pads；
A part by removing the wavelength conversion layer forms multiple grooves on the wavelength conversion layer, wherein the groove
Between the luminescence unit, and the depth of each groove is less than the thickness of the wavelength conversion layer；
Reflection protection part is formed on the wavelength conversion layer and between the luminescence unit, and the reflection protection part is inserted
In the groove, wherein the reflection protection part exposes the electronic pads of the luminescence unit；And
Cutting process is carried out by cutting the wavelength conversion layer and the reflection protection part along the groove, it is multiple to be formed
Light emitting device, wherein the side surface of each light emitting device exposes a part of profile of the wavelength conversion layer, and with described
The profile of each groove of a part filling of reflection protection part.
2. the production method of light emitting device according to claim 1, which is characterized in that the depth of each groove is at least
For the half of the thickness of the wavelength conversion layer.
3. the production method of light emitting device according to claim 1, which is characterized in that further include:
After configuring the luminescence unit on the wavelength conversion layer with being alternatively arranged, the shape on the wavelength conversion layer
At photic zone.
4. the production method of light emitting device according to claim 1, which is characterized in that further include:
Before configuring the luminescence unit on the wavelength conversion layer with being alternatively arranged, the shape on the wavelength conversion layer
At photic zone.
5. the production method of light emitting device according to claim 1, which is characterized in that the reflection protection part further include with
The reflecting surface of the luminescence unit contact.
6. the production method of light emitting device according to claim 5, which is characterized in that the reflection protection part it is described anti-
Penetrating face is plane or curved surface.
7. the production method of light emitting device according to claim 1, which is characterized in that the wavelength conversion layer further includes low
Concentration fluorescence coating and high concentration fluorescence coating, the luminescence unit configuration is on the high concentration fluorescence coating.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911019739.6A CN110767793A (en) | 2015-05-05 | 2016-05-05 | Light emitting device and method for manufacturing the same |
| US15/268,654 US9997676B2 (en) | 2014-05-14 | 2016-09-19 | Light emitting device and manufacturing method thereof |
| US15/788,757 US10439111B2 (en) | 2014-05-14 | 2017-10-19 | Light emitting device and manufacturing method thereof |
| US16/004,445 US10910523B2 (en) | 2014-05-14 | 2018-06-11 | Light emitting device |
| US16/595,414 US10804444B2 (en) | 2014-05-14 | 2019-10-07 | Light-emitting device and manufacturing method thereof |
| US17/164,725 US20210159369A1 (en) | 2014-05-14 | 2021-02-01 | Light emitting device |
| US17/848,408 US20230006109A1 (en) | 2014-05-14 | 2022-06-24 | Light emitting device and manufacturing method thereof |
Applications Claiming Priority (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562157450P | 2015-05-05 | 2015-05-05 | |
| US62/157450 | 2015-05-05 | ||
| US14/711,798 US20150333227A1 (en) | 2014-05-14 | 2015-05-14 | Light emitting device package structure and manufacturing method thereof |
| US14/711798 | 2015-05-14 | ||
| US201562220249P | 2015-09-18 | 2015-09-18 | |
| US62/220249 | 2015-09-18 | ||
| US201562236150P | 2015-10-02 | 2015-10-02 | |
| US62/236150 | 2015-10-02 | ||
| US201562245247P | 2015-10-22 | 2015-10-22 | |
| US62/245247 | 2015-10-22 | ||
| US201562262876P | 2015-12-03 | 2015-12-03 | |
| US62/262876 | 2015-12-03 | ||
| TW105100499 | 2016-01-08 | ||
| TW105100499 | 2016-01-08 |
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| CN201911019739.6A Division CN110767793A (en) | 2015-05-05 | 2016-05-05 | Light emitting device and method for manufacturing the same |
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| CN201911019739.6A Pending CN110767793A (en) | 2015-05-05 | 2016-05-05 | Light emitting device and method for manufacturing the same |
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| CN106129231A (en) | 2016-11-16 |
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