KR101979845B1 - A light emitting device package - Google Patents

A light emitting device package Download PDF

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Publication number
KR101979845B1
KR101979845B1 KR1020120126541A KR20120126541A KR101979845B1 KR 101979845 B1 KR101979845 B1 KR 101979845B1 KR 1020120126541 A KR1020120126541 A KR 1020120126541A KR 20120126541 A KR20120126541 A KR 20120126541A KR 101979845 B1 KR101979845 B1 KR 101979845B1
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KR
South Korea
Prior art keywords
light emitting
layer
light
silicon
emitting device
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KR1020120126541A
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Korean (ko)
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KR20140059992A (en
Inventor
한사름
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엘지이노텍 주식회사
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Publication of KR20140059992A publication Critical patent/KR20140059992A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

An embodiment includes a substrate, a light emitting element disposed on the substrate, a protection layer disposed on the substrate to surround the light emitting element, the protection layer being made of a first silicon, 2 silicon, wherein the first silicon does not comprise a benzene ring, and the second silicon comprises a benzene ring.

Description

[0001] A LIGHT EMITTING DEVICE PACKAGE [0002]

An embodiment relates to a light emitting device package.

BACKGROUND ART Light emitting devices such as light emitting diodes (LEDs) and laser diodes (LD) using semiconducting Group 3-5 or Group 2-6 compound semiconductor materials have been developed with thin film growth technology and device materials, Green, blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam having high efficiency.

Compared with incandescent bulbs, fluorescent lamps, and neon lights, LEDs have low power consumption, high color temperature, and excellent visibility and less glare. The lamp in which the LED is used can be used for a backlight, a display device, a lighting lamp, a vehicle display lamp, a head lamp or the like depending on its use.

The embodiment provides a light emitting device package capable of preventing deformation or discoloration of a lens caused by light.

A light emitting device package according to an embodiment includes a substrate; A light emitting element disposed on the substrate; A protective layer disposed on the substrate so as to surround the light emitting element, the protective layer being made of a first silicon; And a lens disposed on the substrate so as to surround the protective layer, the lens comprising a second silicon, wherein the first silicon does not comprise a benzene ring, and the second silicon comprises a benzene ring.

The first silicon may be Methyl-based silicon, and the second silicon may be Phenyl-based silicon.

The light emitting device package may further include a phosphor layer disposed between the protective layer and the lens.

The protective layer may have a groove portion formed on an upper surface thereof, and the phosphor layer may be located in the groove portion.

The light emitting device may emit light having a wavelength of 380 nm to 460 nm.

The height of the protective layer may be in the range of 100um to 700um, and the height of the lens may be in the range of 1325um to 1525um. The depth of the groove may be 50um to 70um.

The light emitting device package includes: a first lead frame and a second lead frame disposed on the substrate; And a wire connecting the light emitting element and the second lead frame, wherein the light emitting element is disposed on the first lead frame, and the protective layer surrounds the light emitting element and the wire. The refractive index of the first silicon and the refractive index of the second silicon may be different from each other.

The embodiment can prevent deformation or discoloration of the lens caused by light generated in the light emitting element.

1 is a cross-sectional view of a light emitting device package according to an embodiment.
2 is a plan view showing the lead frames of the light emitting device package shown in FIG.
Fig. 3 shows an embodiment of the light emitting device shown in Fig.
Fig. 4 shows another embodiment of the light emitting device shown in Fig.
FIG. 5 shows a chemical structural formula included in the protective layer shown in FIG.
FIG. 6 shows a chemical structural formula that the lens shown in FIG. 1 includes.
Fig. 7 shows the sizes of the protective layer and lens shown in Fig.
Fig. 8 shows a deterioration mechanism of phenyl-based silicon by ultraviolet light or blue light.
9 shows a light emitting device package according to another embodiment
10 shows a light emitting device package according to another embodiment.
11 is an exploded perspective view of a lighting device including a light emitting device package according to an embodiment.
12 shows a display device including a light emitting device package according to an embodiment.
13 shows a head lamp including the light emitting device package according to the embodiment

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on " and " under " include both " directly " or " indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings. Hereinafter, a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.

FIG. 1 is a cross-sectional view of a light emitting device package 100-1 according to the embodiment, and FIG. 2 is a plan view showing lead frames 121 and 122 of the light emitting device package 100-1 shown in FIG. FIG. 1 is a cross-sectional view of the light emitting device package shown in FIG. 2 in the AB direction. FIG. 2 does not show the protective layer 160 and the lens 170 shown in FIG.

1 and 2, a light emitting device package 100-1 includes a substrate 110, lead frames 121 and 122, an adhesive member 130, a light emitting device 140, a wire 150, Layer 160, lens 170, radiation electrode 180, and vias 191-194.

The substrate 110 may be insulating or thermal conductivity are good substrates, such as silicon substrate, silicon carbide (SiC), aluminum nitride (aluminum nitride, AlN), or a ceramic substrate (e.g., Al 2 O 3). The substrate 110 may be formed of a resin material such as polyphthalamide (PPA) having high reflectivity. The substrate 110 may be a single-layer structure or a structure in which a plurality of layers are stacked.

For example, the substrate 110 may be a square sapphire (Al 2 O 3 ) having a length of 3.4 mm (length) and a length of 3.4 mm (mm), but the size is not limited thereto.

The lead frames 121 and 122 may be formed of a conductive material such as titanium, copper, nickel, gold, chromium, tantalum, platinum, tin, Sn), silver (Ag), phosphorus (P), or an alloy thereof, and may be a single layer or a multi-layer structure.

The first lead frames 121 and 122 and the second lead frame may be spaced apart from each other on the substrate so as to be electrically separated from each other. The first lead frame 121 and the second lead frame 122 may reflect the light emitted from the light emitting device 140.

The light emitting element 140 may be mounted on the first lead frame 121. [ The bonding member 130 can attach or fix the light emitting element 140 on the first lead frame 121. [ At this time, the adhesive member 130 may be an insulating material or a conductive material.

The wire 150 may electrically connect the light emitting element and the second lead frame 122. The light emitting device 140 may be, for example, a light emitting diode.

Fig. 3 shows an embodiment 140-1 of the light emitting device shown in Fig.

Referring to FIG. 3, the light emitting device 140-1 may include a substrate 310, a light emitting structure 320, a conductive layer 330, a first electrode 342, and a second electrode 344 .

The substrate 310 may be formed of a carrier wafer, a material suitable for semiconductor material growth. Further, the substrate 310 may be formed of a material having high thermal conductivity, and may be a conductive substrate or an insulating substrate. For example, the substrate 310 may be a material comprising at least one of sapphire (Al 2 O 3 ), GaN, SiC, ZnO, Si, GaP, InP, Ga 2 O 3 , GaAs. An irregular pattern may be formed on the upper surface of the substrate 310.

On the substrate 310, a layer or a pattern using a compound semiconductor of Group 2 or Group 6 elements such as a ZnO layer (not shown), a buffer layer (not shown) and an undoped semiconductor layer (not shown) . The buffer layer or the undoped semiconductor layer may be formed using a compound semiconductor of a group III-V element, and the buffer layer may reduce the difference in lattice constant with respect to the substrate. The undoped semiconductor layer may be a GaN- .

The light emitting structure 320 may be a semiconductor layer that generates light and may include a first semiconductor layer 322, an active layer 324, and a second semiconductor layer 326.

The first semiconductor layer 322 may be formed of a compound semiconductor such as a group III-V, a group II-VI, or the like, and may be doped with a first conductivity type dopant. For example, the first semiconductor layer 322 may be a semiconductor having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? , an n-type dopant (e.g., Si, Ge, Sn, etc.) may be doped.

The active layer 324 can generate light by energy generated in the recombination process of electrons and holes provided from the first semiconductor layer 322 and the second semiconductor layer 326 .

The active layer 324 may be a compound semiconductor of a semiconductor compound, such as a Group 3-V-5 or a Group 2-VI-6 compound semiconductor, and may be a single well structure, a multi-well structure, a quantum- Dot) structure or the like. When the active layer 324 is a quantum well structure, a well layer having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? 1) And a barrier layer having a composition formula of In a Al b Ga 1-ab N (0? A? 1, 0? B? 1, 0? A + b? 1). The well layer may be a material having a band gap lower than the energy band gap of the barrier layer.

The second semiconductor layer 326 may be formed of a compound semiconductor such as a group III-V element, a group II-VI element, or the like, and the second conductivity type dopant may be doped. For example, the second semiconductor layer 326 may be a semiconductor having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? , a p-type dopant (e.g., Mg, Zn, Ca, Sr, Ba) may be doped.

The light emitting device 140-1 may emit light having a wavelength of 380 nm to 460 nm and may include a first semiconductor layer 322, an active layer 324, and a second semiconductor layer 322 included in the light emitting structure 320, The content of indium (In) and / or aluminum (Al) contained in at least one of the two semiconductor layers 326 can be controlled.

The light emitting structure 320 may expose a part of the first semiconductor layer 322 by removing a portion of the second semiconductor layer 326, the active layer 324 and the first semiconductor layer 322.

The conductive layer 330 may be disposed on the second semiconductor layer 326. The conductive layer 330 not only reduces the total reflection but also increases the extraction efficiency of the light emitted from the active layer 324 to the second semiconductor layer 326 because of its good light transmittance.

The conductive layer 330 may include a transparent conductive oxide such as ITO (indium tin oxide), TO (tin oxide), IZO (indium zinc oxide), ITZO (indium tin zinc oxide), IAZO (indium aluminum zinc oxide) Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), AZO (Aluminum Zinc Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IrOx, RuOx, RuOx / ITO, Ni, / Au, or Ni / IrOx / Au / ITO.

The first electrode 342 may be disposed on the exposed first semiconductor layer 322 and the second electrode 344 may be disposed on the conductive layer 330.

Fig. 4 shows another embodiment 140-2 of the light emitting device shown in Fig.

4, the light emitting device 300-2 includes a second electrode unit 405, a passivation layer 440, a current blocking layer 445, a light emitting structure 450, a passivation layer 465, And a first electrode unit 470.

The second electrode unit 405 supplies power to the light emitting structure 450 together with the first electrode unit 470. The second electrode unit 405 includes a support 410, a bonding layer 415, a barrier layer 420, a reflective layer 425, and an ohmic layer 430. . ≪ / RTI >

The support layer 410 supports the light emitting structure 450. The support layer 210 may be formed of a metal or a semiconductor material. The support layer 410 may also be formed of a material having high electrical conductivity and high thermal conductivity. For example, the support layer 410 may be formed of a metal including at least one of copper (Cu), a copper alloy, gold (Au), nickel (Ni), molybdenum (Mo), and copper- Material, or a semiconductor including at least one of Si, Ge, GaAs, ZnO, and SiC.

The bonding layer 415 may be disposed between the supporting layer 410 and the barrier layer 420 and may serve as a bonding layer for bonding the supporting layer 410 to the barrier layer 420. The bonding layer 415 may include at least one of a metal material, for example, In, Sn, Ag, Nb, Pd, Ni, Au and Cu. The bonding layer 415 is formed to bond the supporting layer 410 by bonding. Therefore, when the supporting layer 410 is formed by plating or vapor deposition, the bonding layer 215 may be omitted.

The barrier layer 420 is disposed under the reflective layer 425, the ohmic region 430 and the protective layer 440 and the metal ions of the bonding layer 415 and the support layer 410 are disposed on the reflective layer 425, It is possible to prevent diffusion to the light emitting structure 450 through the region 430. For example, the barrier layer 420 may include at least one of Ni, Pt, Ti, W, V, Fe, and Mo, and may be a single layer or a multilayer.

The reflective layer 425 may be disposed on the barrier layer 420 and may reflect light incident from the light emitting structure 450 to improve light extraction efficiency. The reflective layer 425 may be formed of a metal or an alloy containing at least one of a reflective material such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf.

The reflective layer 425 may be formed of a multilayer of a metal or an alloy and a light transmitting conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, or ATO. For example, IZO / Ni, AZO / / Ag / Ni, AZO / Ag / Ni, or the like.

The ohmic region 430 may be disposed between the reflective layer 425 and the second semiconductor layer 452 and is ohmic contacted with the second semiconductor layer 452 to supply power to the light emitting structure 450 .

The ohmic region 430 can be formed by selectively using the light-transmitting conductive layer and the metal. For example, the ohmic region 430 may include at least one of a metal material that makes an ohmic contact with the second semiconductor layer 452, such as Ag, Ni, Cr, Ti, Pd, Ir, Sn, Ru, Pt, Au, can do.

The protective layer 440 may be disposed on the edge region of the second electrode layer 405. For example, the protective layer 440 may be disposed in the edge region of the ohmic region 430, or in the edge region of the reflective layer 425, or in the edge region of the barrier layer 420, .

The protective layer 440 can prevent the interface between the light emitting structure 450 and the second electrode layer 405 from being peeled off so that the reliability of the light emitting device 300-2 is lowered. The protective layer 440 is an electrically insulating material, e.g., ZnO, SiO 2, Si 3 N 4, TiOx (x is a positive real number), or Al 2 O 3 Or the like.

The current blocking layer 445 may be disposed between the ohmic region 430 and the light emitting structure 450. The upper surface of the current blocking layer 445 is in contact with the second semiconductor layer 452 and the lower surface or the lower surface and the side surface of the current blocking layer 445 can be in contact with the ohmic region 430. The current blocking layer 445 may be arranged so that at least a part of the current blocking layer 445 overlaps with the first electrode portion 470 in the vertical direction.

The current blocking layer 445 may be formed between the ohmic region 430 and the second semiconductor layer 452 or may be formed between the reflective layer 425 and the ohmic region 430. However,

The light emitting structure 450 may be disposed on the ohmic region 430 and the protective layer 440. The side surface of the light emitting structure 450 may be an inclined surface in an isolation etching process that is divided into unit chips. The light emitting structure 450 may include a first semiconductor layer 456, an active layer 454, and a second semiconductor layer 452, which may be the same as those described in FIG. As described in FIG. 3, the light emitting device 140-2 can generate light having a wavelength of 380 nm to 460 nm.

The passivation layer 465 may be disposed on the side of the light emitting structure 450 to electrically protect the light emitting structure 450. The passivation layer 465 may be disposed on the top surface of the first semiconductor layer 456 or on the top surface of the protective layer 440. The passivation layer 465 is an insulating material, e.g., SiO 2, SiO x, SiO x N y, Si 3 N 4 , or Al 2 O 3 .

The first electrode portion 470 may be disposed on the first semiconductor layer 456 and may have a predetermined pattern shape. A roughness pattern (not shown) may be formed on the upper surface of the first semiconductor layer 456 to increase light extraction efficiency. A roughness pattern (not shown) may also be formed on the top surface of the first electrode portion 470 to increase the light extraction efficiency

The passivation layer 160 is disposed on the substrate 110 and encapsulates the light emitting device 140 and the wire 150 to be sealed. The protective layer 160 can prevent deformation or discoloration of the lens 170 caused by light having a wavelength of 380 nm to 460 nm generated from the light emitting element 140.

The protective layer 160 may be made of a material resistant to deterioration due to light having a wavelength of 380 nm to 460 nm, for example, silicon having no benzene ring. The protective layer 160 may be silicon that does not have a benzene ring, for example, methyl-based silicon. The shape of the protective layer 160 is not limited to that shown in FIG. 1, and may be embodied in various shapes.

FIG. 5 shows a chemical structural formula included in the protective layer 160 shown in FIG.

The protective layer 160 may be a polydimethylsiloxane containing the chemical structure shown in FIG.

The lens 170 is located on the substrate 110 and may be wrapped to seal the protective layer 160. The lens 170 may serve to change the path of the light emitted from the light emitting device 140. The lens 170 may be in the form of a dome, but is not limited thereto.

The lens 170 may be made of silicon having high resistance to heat generated from the light emitting element 140, for example, silicon having a benzene ring. For example, the lens 170 may be a phenly-based silicone. This is because, if the lens 170 is deformed or damaged by the heat of the light emitting element 140, a desired light output angle may not be obtained.

FIG. 6 shows a chemical structural formula that the lens 170 shown in FIG. 1 includes.

The lens 170 may be silicon (Methylphenylsiloxane) containing the chemical structure shown in FIG.

FIG. 7 shows the sizes of the protective layer 160 and lens 170 shown in FIG.

Referring to FIG. 7, the height D1 of the light emitting device 140 may be 70um to 90um. The height H3 of the passivation layer 160 may be 100 [mu] m to 700 [mu] m. The difference in height H3 between the light emitting device 140 and the passivation layer 160 should be at least 10 um since the light emitting device 140 must be sufficiently covered. Since the protective layer 160 is weaker than the lens 170, when the height of the protective layer 160 is made larger than 700 μm, deformation due to heat may occur.

 The lens 170 may include a light refracting portion A1 located at the center to correspond to the light emitting element 140 and a flat portion A2 located adjacent to the edge of the light refracting portion A1. The total diameter of the lens 170 may be 2.6 to 2.7 degrees (PHI).

The photoreflecting portion A1 may be a dome shape to change the course of light emitted from the light emitting device 140 and the flat portion A2 may be flat to be parallel to the substrate 110. [

The height H1 of the photoreflecting portion A1 may be 1325um to 1525um and the height H2 of the flat portion A2 may be 90um to 110um. The diameter of the photoreflecting portion A1 may be 1.7-1.9 (PHI).

The refractive index of the protective layer 160 and the refractive index of the lens 170 may be different from each other. Due to the difference in the refractive indexes, the embodiment can improve the light output angle.

The phenyl-based silicone constituting the lens 170 is irradiated with ultraviolet (UV) light and blue light (for example, light having a wavelength of 380 nm to 460 nm) under high temperature (for example, 80 to 90 ° C) ), So that the material structure and physical properties may change, and deterioration, for example, deformation or discoloration may occur.

Fig. 8 shows a degradation mechanism of phenyl-based silicon by ultraviolet light or blue light.

8, of the UV light or a phenyl-based silicon by a blue light absorbing constituents aromatic compounds, i.e., carbon-carbon double bond of the compound having a benzene ring is destroyed, due to the oxidation by the O 2 gas COOH, and C = O And the like can be formed.

The embodiment provides protection between the light emitting element 140 and the lens 170 to prevent deformation or discoloration of the lens 170 caused by UV (Ultra Violet) and blue light (e.g., light having a wavelength of 380 nm to 460 nm) Layer 160 as shown in FIG.

The silicon-based silicon constituting the protective layer 160 is not deformed or discolored due to UV (Ultra Violet) and blue light (for example, light having a wavelength of 380 nm to 460 nm), as compared with the phenyl- Few. This is due to the absence of carbon bonds in the benzene ring to be broken due to UV (Ultra Violet) and blue light in the methyl-based silicone.

Accordingly, the embodiment includes the protective layer 160, which is a first molding member that surrounds the light emitting device 140 that generates light having a wavelength of 380 nm to 460 nm, so that the deformation of the lens 170 caused by UV and blue light, Discoloration can be prevented.

The heat radiating electrode 180 may be disposed on the back surface of the substrate 110. The heat radiating electrode 180 is made of a material having a high thermal conductivity and can act as a path for emitting heat generated from the light emitting device package 100-1. The number of the heat dissipating electrodes 180 may be a plurality and the plurality of heat dissipating electrodes 181, 182 and 183 may be spaced apart from each other on the back surface of the substrate 110.

The vias 191 to 194 can connect the lead frames 121 and 122 and the heat radiating electrodes 181 and 183 through the substrate 110. [ The vias 191 and 192 may be penetrating electrodes filled with a conductive material in via holes provided in the substrate 110.

For example, the first via 191 may connect the first lead frame and the first heat dissipating electrode, and the second via 192 may connect the second lead frame and the second heat dissipating electrode. The first and second lead frames 121 and 122 function as upper electrodes located on the upper side of the substrate 110 and the first and second heat radiation pads 191 and 193 function as lower electrodes Acts as an electrode, and the via can electrically connect the two.

9 shows a light emitting device package 100-2 according to another embodiment. The same reference numerals as those in FIG. 1 denote the same components, and duplicate contents of the foregoing description will be omitted or briefly explained.

9, the light emitting device package 100-2 includes a substrate 110, lead frames 121 and 122, an adhesive member 130, a light emitting device 140, a wire 150, a protection layer 160 A lens 170, a phosphor layer 205, a radiating electrode 180, and vias 191 to 194.

The light emitting device package 100-2 may further include a phosphor layer 205 disposed on the passivation layer 160 as compared with the light emitting device package 100-1 shown in FIG.

The phosphor layer 205 may be located between the protective layer 160-1 and the lens 170. [ The phosphor layer 205 may be a mixture of a phosphor and a resin. The phosphor layer 205 may be in the form of a plate.

The resin to be mixed with the fluorescent substance is preferably a transparent thermosetting resin having high hardness and high reliability such as a silicone resin, an epoxy resin, a glass, a glass ceramic, a polyester resin, an acrylic resin, a urethane resin, a nylon resin , A polyamide resin, a polyimide resin, a vinyl chloride resin, a polycarbonate resin, a polyethylene resin, a Teflon resin, a polystyrene resin, a polypropylene resin, a polyolefin resin and the like. Preferably, the phosphor plate 150 may be any one of polycarbonate, glass, and glass ceramic.

The fluorescent material to be mixed with the resin may be at least one kind, and may include at least one of a silicate-based fluorescent material, a YAG-based fluorescent material, and a nitride-based fluorescent material. For example, the silicate-based fluorescent material may be Ca 2 SiO 4 : Eu, Sr 2 SiO 4 : Eu, Sr 3 SiO 5 : Eu, Ba 2 SiO 4 : Eu and (Ca, Sr, Ba) 2 SiO 4 : And the YAG-base phosphor may be Y 3 Al 5 O 12 : Ce, (Y, Gd) 3 Al 5 O 12 : Ce), and the nitride-based phosphor may be Ca 2 Si 5 N 8 : Eu, CaAlSiN 2 : Eu , (Sr, Ca) AlSiN 2 : Eu,?,? -SiAlON: Eu.

Since the phosphor layer 205 shown in FIG. 9 is located apart from the light emitting element 140, the embodiment can prevent deterioration of the phosphor layer 205 due to heat generated from the light emitting element 140.

10 shows a light emitting device package 100-3 according to another embodiment. The same reference numerals as those in FIG. 1 denote the same components, and duplicate contents of the foregoing description will be omitted or briefly explained.

9, the protective layer 160-1 of the light emitting device package 100-3 has a groove portion 201 corresponding to or aligned with the light emitting device 140, Lt; / RTI > The groove portion 201 may have a structure partially recessed from the upper surface of the protective layer 160-1. The groove 201 may be composed of a bottom 201-1 and a side 201-2 and the side 201-2 may be an inclined surface having an obtuse angle with the bottom 201-1. The area of the bottom 201-2 of the groove 201 may be larger than at least the area of the upper surface of the light emitting element 140. [

The depth of the groove portion 201 may be 50um to 70um and the thickness of the phosphor layer 205-1 may be equal to or smaller than the depth of the groove portion 201. [ If the depth of the groove 201 is greater than 70 um, bonding of the wire 150 may be difficult and may not be sufficient to prevent discoloration of the lens 170.

The phosphor layer 205-1 may be located in the groove 201. [ 10, the distance between the phosphor layer 160-1 and the light emitting device 140 may be reduced, and thus, the protective layer 160-1 may have a reduced distance from the light emitting device 140. Accordingly, So that light efficiency can be improved.

11 is an exploded perspective view of a lighting device including a light emitting device package according to an embodiment.

11, the illumination device includes a light source 750 that emits light, a heat dissipation unit 740 that emits heat of the light source, a housing 700 that houses the light source 750 and the heat dissipation unit 740, And a holder 760 coupling the light source 750 and the heat dissipating unit 740 to the housing 700.

The housing 700 may include a socket coupling portion 710 coupled to an electric socket (not shown), and a body portion 730 connected to the socket coupling portion 710 and having a light source 750 embedded therein. One air flow hole 720 may be formed through the body portion 730.

A plurality of air flow holes 720 may be provided on the body portion 730 of the housing 700 and one or more air flow holes 720 may be provided. The air flow port 720 may be disposed radially or in various forms on the body portion 730.

The light source 750 may include a plurality of light emitting device packages 752 mounted on the substrate 754. [ The substrate 754 may have a shape that can be inserted into the opening of the housing 700 and may be made of a material having a high thermal conductivity to transmit heat to the heat dissipating unit 740 as described later. For example, the light emitting device package 752 may be any one of the above-described embodiments 100-1, 100-2, and 100-3.

A holder 760 is provided below the light source 750, and the holder 760 may include a frame and other air flow holes. Although not shown, an optical member may be provided under the light source 750 to diffuse, scatter, or converge light projected from the light emitting device package 752 of the light source 750.

12 shows a display device including a light emitting device package according to an embodiment. 12, the display device 800 includes a bottom cover 810, a reflection plate 820 disposed on the bottom cover 810, light emitting modules 830 and 835 for emitting light, a reflection plate 820 A light guide plate 840 disposed in front of the light emitting module 830 and guiding the light emitted from the light emitting modules 830 and 835 to the front of the display device and prism sheets 850 and 860 disposed in front of the light guide plate 840, An image signal output circuit 872 connected to the display panel 870 and supplying an image signal to the display panel 870 and a display panel 870 disposed in front of the display panel 870, And a color filter 880 disposed therein. Here, the bottom cover 810, the reflection plate 820, the light emitting modules 830 and 835, the light guide plate 840, and the optical sheet may form a backlight unit.

The light emitting module may include light emitting device packages 835 mounted on the substrate 830. Here, the substrate 830 may be a PCB or the like, and the light emitting device package 835 may be any one of the embodiments 100-1, 100-2, and 100-3.

The bottom cover 810 can house components within the display device 800. [ Also, the reflection plate 820 may be formed as a separate component as shown in the drawing, or may be provided on the rear surface of the light guide plate 840 or on the front surface of the bottom cover 810 in a state of being coated with a highly reflective material .

Here, the reflection plate 820 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and polyethylene terephthalate (PET) can be used.

The light guide plate 830 may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), or polyethylene (PE).

The first prism sheet 850 may be formed of a light-transmissive and elastic polymeric material on one side of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, as shown in the drawings, the plurality of patterns may be provided with a floor and a valley repeatedly as stripes.

In the second prism sheet 860, the direction of the floor and the valley on one side of the supporting film may be perpendicular to the direction of the floor and the valley on one side of the supporting film in the first prism sheet 850. This is for evenly distributing the light transmitted from the light emitting module and the reflective sheet to the front surface of the display panel 1870.

Although not shown, a diffusion sheet may be disposed between the light guide plate 840 and the first prism sheet 850. The diffusion sheet may be made of polyester and polycarbonate-based materials, and the light incidence angle can be maximized by refracting and scattering light incident from the backlight unit. The diffusion sheet includes a support layer including a light diffusing agent, a first layer formed on the light exit surface (first prism sheet direction) and a light incidence surface (in the direction of the reflection sheet) . ≪ / RTI >

In an embodiment, the diffusion sheet, the first prism sheet 850, and the second prism sheet 860 make up an optical sheet, which may be made of other combinations, for example a microlens array, A combination of one prism sheet and a microlens array, or the like.

The display panel 870 may include a liquid crystal display (LCD) panel, and may include other types of display devices that require a light source in addition to the liquid crystal display panel 860.

13 shows a head lamp 900 including the light emitting device package according to the embodiment. 13, the head lamp 900 includes a light emitting module 901, a reflector 902, a shade 903, and a lens 904.

The light emitting module 901 may include a light emitting device package 100-1, 100-2, or 100-3 according to an embodiment disposed on a substrate (not shown).

The reflector 902 reflects the light 911 emitted from the light emitting module 901 in a predetermined direction, for example, toward the front 912.

The shade 903 is disposed between the reflector 902 and the lens 904 and reflects off or reflects a part of the light reflected by the reflector 902 toward the lens 904 to form a light distribution pattern desired by the designer. The one side portion 903-1 and the other side portion 903-2 of the shade 903 may have different heights from each other.

The light emitted from the light emitting module 901 can be reflected by the reflector 902 and the shade 903 and then transmitted through the lens 904 and directed toward the front of the vehicle body. The lens 904 can refract the light reflected by the reflector 902 forward.

 The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

110: substrate 121, 122: lead frame
130: Adhesive member 140: Light emitting element
150: wire 160: protective layer
170: lens 180: radiation electrode
191, 192: Vias 205: Phosphor layer

Claims (9)

Board;
A light emitting element disposed on the substrate;
A protective layer disposed on the substrate so as to surround the light emitting element, the protective layer being made of a first silicon;
A lens disposed on the substrate to surround the protective layer, the lens comprising a second silicon; And
And a phosphor layer disposed between the protective layer and the lens,
Wherein the first silicon does not comprise a benzene ring, the second silicon comprises a benzene ring,
Wherein the protective layer has a groove portion formed on an upper surface thereof, and the phosphor layer is located in the groove portion. The method according to claim 1,
Wherein the first silicon is Methyl silicon and the second silicon is Phenyl silicon. delete delete The method according to claim 1,
Wherein the light emitting device generates light having a wavelength of 380 nm to 460 nm. The method according to claim 1,
Wherein the height of the protective layer is in the range of 100um to 700um, and the height of the lens is in the range of 1325um to 1525um. The method according to claim 1,
And the depth of the groove portion is 50um to 70um. The method according to any one of claims 1, 2, or 5 to 7,
A first lead frame and a second lead frame disposed on the substrate; And
And a wire connecting the light emitting element and the second lead frame,
Wherein the light emitting element is disposed on the first lead frame, and the protective layer surrounds the light emitting element and the wire. The method according to any one of claims 1, 2, or 5 to 7,
Wherein the first silicon and the second silicon have different refractive indices from each other.
KR1020120126541A 2012-11-09 2012-11-09 A light emitting device package KR101979845B1 (en)

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Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2010118620A (en) * 2008-11-14 2010-05-27 Showa Denko Kk Light-emitting device

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