KR102047440B1 - A light emitting device - Google Patents

A light emitting device Download PDF

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Publication number
KR102047440B1
KR102047440B1 KR1020130013686A KR20130013686A KR102047440B1 KR 102047440 B1 KR102047440 B1 KR 102047440B1 KR 1020130013686 A KR1020130013686 A KR 1020130013686A KR 20130013686 A KR20130013686 A KR 20130013686A KR 102047440 B1 KR102047440 B1 KR 102047440B1
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South Korea
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layer
light emitting
light
electrode
disposed
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KR1020130013686A
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Korean (ko)
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KR20140100683A (en
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박경욱
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엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

The embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode disposed on the first semiconductor layer, an ohmic region disposed below the second semiconductor layer, and below the ohmic region. A reflection layer including a side reflection layer disposed in the side reflection layer and a lower reflection portion disposed below the side emission layer and an upper reflection portion disposed in the side emission layer and connecting the ohmic region and the lower reflection portion. The upper reflector does not overlap with the first electrode in a vertical direction.

Description

Light emitting element {A LIGHT EMITTING DEVICE}

The embodiment relates to a light emitting device.

In general, light emitting diodes (hereinafter referred to as 'LEDs') are used to send and receive electric signals by converting electrical signals into infrared, visible or light forms by using a property of a compound semiconductor called recombination of electrons and holes. It is a semiconductor device.

In LEDs, the frequency (or wavelength) of light emitted is a function of the band gap of the semiconductor material, where low energy and long wavelength photons are generated when using a semiconductor material with a small band gap, When using a semiconductor material having a band gap, photons of short wavelengths are generated. Therefore, the semiconductor material of the device is selected according to the kind of light to be emitted.

In order to realize high brightness of LED, it is important to increase light extraction efficiency. Flip-chip structure, surface texturing, patterned sapphire substrate (PSS), photonic crystal technology, and anti-reflection to improve light extraction efficiency Various methods have been studied using the layer structure.

In general, a light emitting device includes a light emitting structure that is a semiconductor layer that generates light, a first electrode and a second electrode to which power is supplied, a current blocking layer for current dispersion, an ohmic layer in ohmic contact with the light emitting structure, It may include an indium tin oxide (ITO) layer to improve the light extraction efficiency.

The embodiment provides a light emitting device capable of improving luminous efficiency and light directivity angle.

The light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; A first electrode disposed on the first semiconductor layer; An ohmic region disposed under the second semiconductor layer; A side emission layer disposed below the ohmic region and transmitting light; And a reflecting layer including a lower reflector disposed under the lateral emission layer, and an upper reflector disposed in the lateral emission layer and connecting the ohmic region and the lower reflector, wherein the upper reflector is perpendicular to the first electrode. Do not overlap in the direction.

 The first electrode may include a pad part; An external electrode extending from the pad part and disposed on an upper edge of the first semiconductor layer; And an inner electrode positioned inside the outer electrode and connected to the outer electrode, and the upper reflector may be aligned between the outer electrode and the inner electrode.

The upper reflector may be a plurality, and the plurality of upper reflectors may be spaced apart from each other.

The side emitting layer may be made of a transmissive non-conductive insulating material.

The side emitting layer is disposed under the ohmic region and comprises a first side emitting layer made of a transparent nonconductive insulating material; And a second side emitting layer disposed under the first side emitting layer and made of a light transmissive conductive material.

The side emission layer may include a plurality of light transmissive insulating layers having different refractive indices.

The diameters of the plurality of upper reflection parts may be different from each other based on the distance from the pad part. As the adjacent to the pad portion, the diameter of the plurality of upper reflecting portions may decrease.

The side emission layer may include at least one of silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), or aluminum oxide (Al 2 O 3 ). The side emitting layer may have a thickness of about 10 μm to about 100 μm. The light emitting device may further include a current blocking layer disposed between the second semiconductor layer and the side emission layer and overlapping the first electrode in a vertical direction.

The embodiment can improve luminous efficiency and light directivity angle.

1 is a plan view of a light emitting device according to an embodiment.
2 is a cross-sectional view of the AB direction of the light emitting device illustrated in FIG. 1.
3 illustrates a light emitting device according to another embodiment.
4 illustrates a light emitting device according to another embodiment.
5 is a plan view of a light emitting device according to another exemplary embodiment.
FIG. 6 is a cross-sectional view of the CD direction of the light emitting device illustrated in FIG. 5.
7 illustrates a light emitting device package according to an embodiment.
8 is an exploded perspective view of a lighting device including a light emitting device package according to an embodiment.
9 illustrates a display device including a light emitting device package according to an exemplary embodiment.
10 illustrates a head lamp including a light emitting device package according to an embodiment.

Hereinafter, the embodiments will be apparent from the accompanying drawings and the description of the embodiments. In the description of an embodiment, each layer (region), region, pattern, or structure is "on" or "under" the substrate, each layer (film), region, pad, or pattern. In the case where it is described as being formed at, "up" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criteria for up / down or down / down each layer will be described with reference to the drawings.

In the drawings, sizes are exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size. Like reference numerals denote like elements throughout the description of the drawings. Hereinafter, a light emitting device according to an embodiment will be described with reference to the accompanying drawings.

1 is a plan view of a light emitting device 100 according to the embodiment, and FIG. 2 is a cross-sectional view of the light emitting device 100 shown in FIG.

1 and 2, the light emitting device 100 includes a light emitting structure 150, a first electrode 170, a protective layer 140, a current blocking layer 135, and a passivation layer. 160, an ohmic region 130, a side emission layer 125, and a second electrode 101.

The light emitting structure 150 generates light having a predetermined wavelength. The side surface of the light emitting structure 150 may be an inclined surface in an isolation etching process divided into unit chips.

The light emitting structure 150 may include a first semiconductor layer 156, an active layer 154 disposed under the first semiconductor layer 156, and a second semiconductor layer 152 disposed under the active layer 154. have.

The first semiconductor layer 156 may be implemented with compound semiconductors such as Groups III-5, II-6, and the like, and may be doped with the first conductivity type dopant.

For example, the first semiconductor layer 156 is In x Al y Ga 1 -x- y N may be a semiconductor having a composition formula of (0≤x≤1, 0≤y≤1), n-type dopant (such as: Si , Ge, Sn, etc.) may be doped.

The active layer 154 may generate light by energy generated during a recombination process of electrons and holes provided from the first semiconductor layer 156 and the second semiconductor layer 152. .

The active layer 154 may be disposed between the first semiconductor layer 156 and the second semiconductor layer 152, and may be implemented as a semiconductor compound, for example, a compound semiconductor of Groups 3-5 and 2-6. have.

The active layer 154 may be a single well structure, a multi well structure, a quantum-wire structure, a quantum dot structure, or the like.

Of the active layer 154. If the quantum well structure, the active layer 154 is In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) the composition formula Single or quantum well structure having a well layer having a barrier layer having a compositional formula of In a Al b Ga 1 -a- b N ( 0≤a≤1, 0≤b≤1, 0≤a + b≤1) It can have The well layer may be a material having a band gap lower than the energy band gap of the barrier layer.

The second semiconductor layer 152 may be implemented with compound semiconductors such as Groups III-5, II-6, and the like, and may be doped with the second conductivity type dopant.

For example, the second semiconductor layer 136 is Al x In y Ga 1 -x- y N may be a semiconductor having a composition formula of (0≤x≤1, 0≤y≤1), p-type dopants (e.g., Mg , Zn, Ca, Sr, Ba) may be doped.

The first electrode 170 may be disposed on the first semiconductor layer 156. Roughness 180 may be formed on the top surface of the first semiconductor layer 156 to increase light extraction efficiency. In addition, roughness (not shown) may be formed on an upper surface of the first electrode 170 to increase light extraction efficiency.

The first electrode 170 may have a predetermined pattern shape.

For example, the first electrode 170 may include pad portions 102a and 102b and branch electrodes 172a, 172b, 172c, 172d and 172e. The pad portions 102a and 102b may be portions of the first electrode 170 to which wires are bonded for power supply.

The branch electrodes 172a, 172b, 172c, 172d, and 172e may serve as current spreading to evenly spread current supplied from the pad portions 102a and 102b to the first semiconductor layer 156.

The branch electrodes 172a, 172b, 172c, 172d, and 172e extend from the pad portions 102a and 102b and are disposed on the top edge of the first semiconductor layer 156 and are disposed on the outer electrodes 172a, 172b, 172c, and 172d. And an internal electrode 172e disposed on an upper surface of the first semiconductor layer 156 positioned inside the external electrodes 172a, 172b, 172c, and 172d.

The pad portions 102a and 102b are provided at least one of the places where the external electrodes 172a, 172b, 172c, and 172d meet each other, or where the external electrodes 172a, 172b, 172c, and 172d meet each other. Can be.

The pad portions 102a and 102b may include a first pad portion 102a and a second pad portion 102b. The first pad portion 102a may be provided at a portion where the first external electrode 172a and the second external electrode 172b are in contact, and the second pad portion 102b may be the second external electrode 172b and the third. The external electrode 172c may be provided at the contact portion.

The external electrodes 172a, 172b, 172c, 172d and the internal electrode 172e shown in FIG. 1 are merely exemplary, and the first electrode 170 is not limited to the structure shown in FIG. Can be implemented.

The protective layer 140 may be disposed on an edge region of the bottom surface of the second semiconductor layer 152. The protective layer 140 may prevent the interface between the light emitting structure 150 and the side emission layer 125 from being peeled off, thereby reducing the reliability of the light emitting device 100. In addition, at least a portion of the protective layer 140 may overlap with the external electrodes 172a, 172b, 172c, and 172d in the vertical direction, and thus may serve as current dispersion.

The protective layer 140 is an electrically insulating material, for example ZnO, SiO 2 , Si 3 N 4 , TiOx (x is a positive real number), or Al 2 O 3 Or the like.

The current blocking layer 135 is disposed under the second semiconductor layer 152. In detail, the current blocking layer 135 may be disposed on one region of the bottom surface of the second semiconductor layer 152.

The current blocking layer 135 may be disposed between the second semiconductor layer 152 and the side emission layer 125.

The current blocking layer 135 may be disposed corresponding to the first electrode 170, and at least a portion of the current blocking layer 135 may overlap with the first electrode 170 in the vertical direction. For example, the current blocking layer 135 may have a pattern shape corresponding to the pattern of the first electrode 170. The vertical direction may be a direction from the second semiconductor layer 152 to the first semiconductor layer 156.

 Since the current blocking layer 135 overlaps at least a portion of the first electrode 170 in the vertical direction, the current blocking layer 135 may be disposed in a specific region of the light emitting structure 150 positioned between the first electrode 170 and the second electrode 101. A phenomenon in which current is concentrated may be alleviated to improve light emission efficiency of the light emitting device 100.

The current blocking layer 135 may be a material that forms a Schottky contact with the second semiconductor layer 152, or an electrically insulating material. For example, the current blocking layer 135 may be formed of ZnO, SiO 2 , SiON, It may include at least one of Si 3 N 4 , Al 2 O 3 , TiO 2 , AiN.

The ohmic region 130 may be disposed under the second semiconductor layer 152 and may be in ohmic contact with the bottom surface of the second semiconductor layer 242 except for the region where the current blocking layer 135 is disposed. The ohmic region 130 may serve to smoothly supply power to the light emitting structure 150 from the second electrode 101.

Although the ohmic region 130 illustrated in FIG. 2 is shown to contact only the side of the current blocking layer 135, in another embodiment, the material forming the ohmic region 130 is formed on the side and bottom surfaces of the current blocking layer 135. Can be placed in.

The ohmic region 130 may include at least one of In, Zn, Sn, Ni, Pt, and Ag. In addition, the ohmic region 130 may be formed by selectively using a transparent conductive layer and a metal. For example, the ohmic region 130 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium (IGTO). tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrO x , RuO x , RuO x / ITO, Ni, Ag, Ni / IrO x / Au, and Ni / It may include one or more of IrO x / Au / ITO, and may be implemented in a single layer or multiple layers.

The passivation layer 160 may be disposed on the side of the light emitting structure 150 to electrically protect the light emitting structure 150. The passivation layer 160 may be disposed on a portion of the top surface of the first semiconductor layer 156 or the top surface of the protective layer 140. The passivation layer 160 may be formed of an insulating material such as SiO 2 , SiO x , SiO x N y , Si 3 N 4 , or Al 2 O 3 to be formed Can be.

The side emission layer 125 is disposed under the ohmic region 130, the current blocking layer 135, and the protective layer 140, and is reflected by the light emitted from the light emitting element 150 and the reflective layer 120. By emitting light in the lateral direction, the light directing angle of the light emitting device 100 can be improved.

Side-emitting layer 125 can be made including at least one of a light transmissive non-conducting insulating material, e.g., silicon oxide (SiO 2), titanium oxide (TiO 2), or aluminum oxide (Al 2 O 3).

The thickness of the side emission layer 125 may be 10 μm to 100 μm in consideration of the lateral emission and the light directing angle. When the thickness of the side emission layer 125 is less than 10 μm, since the light emitted from the light emitting element 150 and the light reflected by the reflective layer 120 are hardly emitted in the lateral direction, the light directing angle changes. Because there is almost no.

In addition, when the thickness of the side emission layer 125 is greater than 100 μm, pressure and heat during the LLO (Laser Lift Off) process of removing the growth substrate (not shown) from which the light emitting structure 150 is grown are removed from the light emitting structure 150. This is because the side release layer 125 may be damaged.

The reflective layer 120 is disposed below the side emission layer 125, and a portion of the reflective layer 120 may contact the ohmic region 130 by passing through the side emission layer 125.

The reflective layer 120 is located in the lower reflector 121 and the side emission layer 125 which are positioned below the lower side of the side emission layer 125 and at least one upper portion connecting the ohmic region 130 and the lower reflector 121. Reflecting portions 122-1 to 122-n, and n ≧ 1.

At least one upper reflection part 122-1 to 122-n, and a natural number of n ≧ 1, does not overlap the first electrode 179 in the vertical direction. In addition, the at least one upper reflector 122-1 to 122-n (a natural number of n ≧ 1) does not overlap the current blocking layer 135 in the vertical direction.

The sides of the at least one upper reflector 122-1 to 122-n (a natural number of n≥1) are surrounded by the side emission layer 125, and the at least one upper reflector 122-1 to 122-n, An upper surface of the natural number n ≧ 1 may be in ohmic contact with the ohmic region 130.

For example, the reflective layer 120 extends from the lower reflector 121 to the ohmic region 130 and passes through the side emission layer 125 to contact the ohmic region 130. 122-n, such as n = 6). The upper reflectors 122-1 to 122-n, for example, n = 6 may be disposed to be spaced apart from each other in the side emission layer 125.

The upper reflection parts 122-1 to 122-n, for example, n = 6 are partial regions S1 of the light emitting structure 150 positioned between the external electrodes 172a, 172b, 172c, and 172d and the internal electrode 172e. ) Can be arranged.

The reflective layer 120 may be formed of a metal or an alloy including at least one of a reflective material, for example, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf.

Alternatively, the reflective layer 120 may be formed using a reflective material and a transparent conductive material. For example, the reflective layer 120 may be formed of IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, or the like.

The support layer 105 may be disposed under the reflective layer 120 and support the light emitting structure 150. The support layer 105 may be formed of a metal or a semiconductor material. In addition, the support layer 105 may be formed of a material having high electrical conductivity and thermal conductivity.

For example, the support layer 105 may include at least one of copper (Cu), copper alloy (Cu alloy), gold (Au), nickel (Ni), molybdenum (Mo), and copper-tungsten (Cu-W). It may be a material or a semiconductor including at least one of Si, Ge, GaAs, ZnO, and SiC.

The barrier layer 115 is disposed between the reflective layer 120 and the support layer 105, and metal ions of the bonding layer 110 and the support layer 105 pass through the reflective layer 120 and the ohmic region 130. Therefore, it may be prevented from diffusing to the light emitting structure 150. For example, the barrier layer 115 may include at least one of Ni, Pt, Ti, W, V, Fe, and Mo, and may include a single layer or multiple layers.

The bonding layer 110 may be disposed between the support layer 105 and the barrier layer 115 and may serve as a bonding layer bonding the support layer 105 and the barrier layer 115 to each other.

The bonding layer 110 may include at least one of a metal material, for example, In, Sn, Ag, Nb, Pd, Ni, Au, and Cu. Since the bonding layer 110 is formed to bond the support layer 105 by a bonding method, the bonding layer 110 may be omitted when the support layer 105 is formed by a plating or deposition method.

The second electrode 105 together with the first electrode 170 provides power to the light emitting structure 150. Power may be supplied to the reflective layer 120 by the second electrode 105, and may be supplied to the light emitting structure 150 through the upper reflectors 122-1 to 122-n and a natural number of n≥1. .

Since the upper reflectors 122-1 to 122-n, a natural number of n≥1, are non-overlapping with the first electrode 170 in the vertical direction, the embodiment can improve the current dispersing effect, thereby improving the luminous efficiency. Can be improved.

Since the light emitted from the light emitting structure 150 and the light reflected from the reflective layer 120 are emitted laterally by the side emission layer 125, the light directing angle can be increased, The side luminous efficiency can be improved.

3 shows a light emitting device 200 according to another embodiment. The same reference numerals as in FIG. 2 denote the same components, and the same components will be briefly or omitted in order to avoid duplication.

Referring to FIG. 3, the side emission layer 210 may include a first side emission layer 214 and a second side emission layer 212.

The first side emission layer 212 may be disposed under the ohmic region 130, the protection layer 130, and the current blocking layer 135, and may be a light transmissive non-conductive insulating material.

For example, the first side emission layer 212 may be formed of silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), or aluminum oxide (Al 2 O 3 ).

The second side emitting layer 214 may be disposed below the first side emitting layer 214 and may be a light transmissive conductive material. For example, the second side emission layer 214 may be a conductive oxide material. The second side emission layer 214 may be spaced apart from and separated from the ohmic region 130 by the first side emission layer 212.

Specifically, the second side emission layer 214 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), or IGTO. It may include one or more of indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), and gallium zinc oxide (GZO), and may be implemented in a single layer or multiple layers.

The lower reflector 121 may be positioned below the second side emitting layer 214, and the upper reflectors 122-1 to 122-n, n ≧ 1 may correspond to the second side emitting layer 214 and the first side. The ohmic region 130 and the lower reflector 121 may be connected to each other through the side emission layer 212.

In the embodiment 200, a conductive oxid material may be used as a part of the side emission layer 210.

4 illustrates a light emitting device 300 according to another embodiment. The same reference numerals as in FIG. 2 denote the same components, and the same components will be briefly or omitted in order to avoid duplication.

Referring to FIG. 4, the side emission layer 410 may include a plurality of light-transmitting insulating layers 410-1 to 410-m (m> 1) having different refractive indices.

The plurality of light-transmitting insulating layers 410-1 to 410-m (m> 1 natural number) may be formed of any one of silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), or aluminum oxide (Al 2 O 3 ). The refractive index may be different. For example, the refractive indexes of the transparent insulating layers 410-1 to 410-m (m> 1) may be different from each other by adjusting the thickness and density.

The lower reflector 121 may be located under the transparent insulating layer 410-m, and the upper reflectors 122-1 through 122-n and n ≧ 1 may be formed by the plurality of transparent insulating layers 410-1 through 410-m, a natural number of m> 1) to connect the ohmic region 130 and the lower reflector 121.

Since the plurality of light-transmissive insulating layers 410-1 to 410-m and m> 1 are natural numbers of different refractive indices, light emitted from the light emitting structure 150 and light reflected by the reflective layer 120 are sided. The light may be refracted in the emission layer 410, and accordingly, the embodiment may improve light extraction efficiency.

5 is a plan view of a light emitting device 400 according to another embodiment, and FIG. 6 is a cross-sectional view of a CD direction of the light emitting device 400 illustrated in FIG. 5. The same reference numerals as in FIG. 2 denote the same components, and the same components will be briefly or omitted in order to avoid duplication.

Referring to FIGS. 5 and 6, the reflective layer 310 passes through the ohmic region 130 and the lower reflection through the lower reflector 121 and the side emitting layer 125, which are positioned below the lower side of the side emission layer 125. The connection unit 121 may include a plurality of upper reflection parts 310-1 to 310-n, and a natural number of n> 1. The plurality of upper reflection parts 310-1 to 310-n may be disposed to be spaced apart from each other.

The cross-sectional areas, or diameters (eg, d1, d2, d3) of the plurality of upper reflecting portions 310-1 to 310-n, n> 1, based on the distance from the pad portions 102a and 102b, are can be different.

For example, the closer to the pad portions 102a and 102b, the smaller the cross-sectional area or diameter (eg, d1, d2, d3) of the upper reflectors 310-1 to 310-n, where n> 1 is. . In other words, the farther away from the pad portions 102a and 102b, the cross-sectional area or diameter (eg, d1, d2, d3) of the upper reflecting portions 310-1 to 310-n, n> 1 may increase. .

By varying the cross-sectional area or diameter of the upper reflecting portions 310-1 to 310-n, n> 1 according to the separation distance from the pad portions 102a and 102b, the embodiment can disperse the current and thus Therefore, luminous efficiency can be improved.

7 illustrates a light emitting device package 600 according to an embodiment.

Referring to FIG. 7, the light emitting device package 600 includes a package body 610, lead frames 612 and 614, a light emitting device 620, a reflective plate 625, a wire 630, and a resin layer 640. do.

A cavity may be formed on an upper surface of the package body 610. The side wall of the cavity may be formed to be inclined. The package body 610 may be formed of a substrate having good insulation or thermal conductivity, such as a silicon-based wafer level package, a silicon substrate, silicon carbide (SiC), aluminum nitride (AlN), or the like. It may have a structure in which a plurality of substrates are stacked. The embodiment is not limited to the material, structure, and shape of the package body 610.

The lead frames 612 and 614 are disposed on the package body 610 to be electrically separated from each other in consideration of heat dissipation or mounting of light emitting devices. The light emitting element 620 is electrically connected to the lead frames 612 and 614. The light emitting device 620 may be any one of the embodiments 100, 200, 300, and 400.

The reflective plate 625 is formed on the side wall of the cavity of the package body 610 to direct light emitted from the light emitting element in a predetermined direction. The reflector plate 625 is made of a light reflecting material and may be, for example, a metal coating or a metal flake.

The resin layer 640 may surround the light emitting device 620 positioned in the cavity of the package body 610 to protect the light emitting device 620 from the external environment. The resin layer 640 may be made of a colorless transparent polymer resin material such as epoxy or silicon. The resin layer 640 may include a phosphor to change the wavelength of light emitted from the light emitting element 620.

8 is an exploded perspective view of a lighting device including a light emitting device package according to an embodiment. Referring to FIG. 8, the lighting apparatus includes a light source 750 for projecting light, a heat dissipation unit 740 for dissipating heat of the light source, a housing 700 for accommodating the light source 750 and the heat dissipation unit 740, and The holder 760 couples the light source 750 and the heat dissipation part 740 to the housing 700.

The housing 700 may include a socket coupling portion 710 coupled to an electrical socket (not shown), and a body portion 730 connected to the socket coupling portion 710 and having a light source 750 embedded therein. One air flow port 720 may be formed through the body portion 730.

A plurality of air flow holes 720 may be provided on the body portion 730 of the housing 700, and one or more air flow holes 720 may be provided. The air flow port 720 may be disposed radially or in various forms in the body portion 730.

The light source 750 may include a plurality of light emitting device packages 752 mounted on the substrate 754. The substrate 754 may be shaped to be inserted into the opening of the housing 700, and may be made of a material having high thermal conductivity to transfer heat to the heat dissipation unit 740, as described below. For example, the light emitting device package 752 may be the embodiment 600 illustrated in FIG. 7.

A holder 760 is provided below the light source 750, and the holder 760 may include a frame and other air flow ports. In addition, although not shown, an optical member may be provided under the light source 750 to diffuse, scatter, or converge the light projected from the light emitting device package 752 of the light source 750.

9 illustrates a display device including a light emitting device package according to an exemplary embodiment. 9, the display device 800 includes a bottom cover 810, a reflector 820 disposed on the bottom cover 810, light emitting modules 830 and 835 that emit light, and a reflector 820. ) An optical sheet including a light guide plate 840 which is disposed in front of the light guide plate and guides light emitted from the light emitting modules 830 and 835 to the front of the display device, and prism sheets 850 and 860 disposed in front of the light guide plate 840. And a display panel 870 disposed in front of the optical sheet, an image signal output circuit 872 connected to the display panel 870 and supplying an image signal to the display panel 870, and in front of the display panel 870. It may include a color filter 880 disposed. The bottom cover 810, the reflector 820, the light emitting modules 830 and 835, the light guide plate 840, and the optical sheet may form a backlight unit.

The light emitting module may include light emitting device packages 835 mounted on the substrate 830. Here, the PCB 830 may be used, and the light emitting device package 835 may be the embodiment 600 illustrated in FIG. 7.

The bottom cover 810 may receive components in the display device 800. In addition, the reflective plate 820 may be provided as a separate component as shown in the drawing, or may be provided in the form of a high reflective material on the rear surface of the light guide plate 840 or the front surface of the bottom cover 810. .

Here, the reflective plate 820 may use a material having a high reflectance and being extremely thin, and may use polyethylene terephthalate (PET).

The light guide plate 830 may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), polyethylene (PE), or the like.

In addition, the first prism sheet 850 may be formed of a light transmitting and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In addition, the direction of the floor and the valley of one surface of the support film in the second prism sheet 860 may be perpendicular to the direction of the floor and the valley of one surface of the support film in the first prism sheet 850. This is to evenly distribute the light transmitted from the light emitting module and the reflective sheet to the front surface of the display panel 1870.

Although not shown, a diffusion sheet may be disposed between the light guide plate 840 and the first prism sheet 850. The diffusion sheet may be made of a polyester and polycarbonate-based material, and may maximize the light projection angle through refraction and scattering of light incident from the backlight unit. The diffusion sheet is formed on a support layer including a light diffusing agent, a first layer and a second layer which are formed on a light exit surface (first prism sheet direction) and a light incident surface (reflective sheet direction) and do not include a light diffuser. It may include.

In an embodiment, the diffusion sheet, the first prism sheet 850, and the second prism sheet 860 form an optical sheet, which optical sheet is made of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Or a combination of one prism sheet and a micro lens array.

A liquid crystal display panel may be disposed in the display panel 870. In addition to the liquid crystal display panel 860, another type of display device that requires a light source may be provided.

10 illustrates a head lamp 900 including a light emitting device package according to an embodiment. Referring to FIG. 10, the head lamp 900 includes a light emitting module 901, a reflector 902, a shade 903, and a lens 904.

The light emitting module 901 may include a light emitting device package 600 according to an exemplary embodiment disposed on a substrate (not shown).

The reflector 902 reflects light 911 emitted from the light emitting module 901 in a predetermined direction, for example, the front 912.

The shade 903 is disposed between the reflector 902 and the lens 904, and a member that blocks or reflects a part of the light reflected by the reflector 902 toward the lens 904 to achieve a light distribution pattern desired by the designer. As one side, the one side portion 903-1 and the other side portion 903-2 of the shade 903 may have different heights.

Light irradiated from the light emitting module 901 may be reflected by the reflector 902 and the shade 903 and then transmitted through the lens 904 to face the front of the vehicle body. The lens 904 may deflect forward light reflected by the reflector 902.

 Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the present invention.

101: second electrode 105: support layer
110: bonding layer 115: barrier layer
120: reflective layer 125: side emitting layer
130: ohmic region 135: current blocking layer
140: protective layer 150: light emitting structure
152: second semiconductor layer 154: active layer
156: first semiconductor layer 160: passivation layer
170: first electrode 180: roughness.

Claims (11)

A light emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer;
A first electrode disposed on the first semiconductor layer;
An ohmic region disposed under the second semiconductor layer;
A side emission layer disposed below the ohmic region and transmitting light; And
A reflection layer including a lower reflection portion disposed below the side emission layer, and an upper reflection portion located in the side emission layer and connecting the ohmic region and the lower reflection portion,
The first electrode,
Pad unit;
An external electrode extending from the pad part and disposed on an upper edge of the first semiconductor layer; And
Located inside the external electrode, and includes an internal electrode connected to the external electrode,
The upper reflector is not overlapped with the first electrode in a vertical direction, and is aligned between the outer electrode and the inner electrode,
The thickness of the side release layer is 10㎛ ~ 100㎛,
The side emission layer includes at least one of silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), or aluminum oxide (Al 2 O 3 ). delete The method of claim 1,
The plurality of upper reflectors, the plurality of upper reflectors are spaced apart from each other. delete The method of claim 1, wherein the side release layer,
A first side emission layer disposed below the ohmic region and formed of a light transmissive nonconductive insulating material; And
A second side emitting layer disposed under the first side emitting layer and formed of a light-transmissive conductive material;
The side release layer,
A light emitting device comprising a plurality of transparent insulating layers having different refractive indices. delete delete The method of claim 3,
The light emitting device of claim 2, wherein a diameter of the plurality of upper reflecting portions decreases as the position is adjacent to the pad portion. delete delete delete
KR1020130013686A 2013-02-07 2013-02-07 A light emitting device KR102047440B1 (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100999701B1 (en) * 2010-02-03 2010-12-08 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device and light emitting device package

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KR101769078B1 (en) * 2010-11-18 2017-08-18 서울바이오시스 주식회사 Light emitting diode chip having electrode pad
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Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100999701B1 (en) * 2010-02-03 2010-12-08 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device and light emitting device package

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