KR102170213B1 - Light emitting device - Google Patents

Abstract

An embodiment is a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode disposed on the first conductivity type semiconductor layer, and disposed under the second conductivity type semiconductor layer A second electrode layer disposed on a side surface of the light emitting structure, a reflective member electrically connected to the first electrode, the second conductivity type semiconductor layer, and the active layer disposed between the reflective member and the side surface of the light emitting structure And an insulating layer covering a part of the first conductive type semiconductor layer, and a conductive layer disposed between the reflective member and the first conductive type semiconductor layer, and between the reflective member and the insulating layer.

Description

Light emitting device {LIGHT EMITTING DEVICE}

The embodiment relates to a light emitting device.

Group III-V nitride semiconductors such as GaN are in the spotlight as core materials for semiconductor optical devices such as light-emitting diodes (LEDs), laser diodes (LDs) and solar cells due to their excellent physical and chemical properties.

Group III-V nitride semiconductor optical devices include blue and green light bands, and can have high luminance and high reliability, and thus are in the spotlight as constituent materials of light-emitting devices.

In general, a vertical light emitting device may include a p-type electrode, a light-emitting structure disposed on the p-type electrode, an n-type electrode disposed on the light-emitting structure, and a reflective layer disposed between the p-type electrode and the light-emitting structure.

The light-emitting structure may include an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, and the reflective layer serves to improve light extraction efficiency by reflecting light generated from the light-emitting structure in a vertical direction. I can. However, the vertical light emitting device having such a structure cannot control light traveling in a lateral direction.

The embodiment provides a light emitting device capable of improving light extraction efficiency.

The light emitting device according to the embodiment includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode disposed on the first conductivity type semiconductor layer, and the second conductivity type semiconductor. A second electrode layer disposed below the layer, a reflective member disposed on a side surface of the light emitting structure and electrically connected to the first electrode, and the second conductivity type semiconductor disposed between the reflective member and the side surface of the light emitting structure A layer, the active layer, and an insulating layer covering a part of the first conductive type semiconductor layer, and a conductive layer disposed between the reflective member and the first conductive type semiconductor layer, and between the reflective member and the insulating layer do.

The reflective member covers the entire side surface of the light emitting structure.

The diameter of the light-emitting structure may increase as the progress proceeds in the first direction, and the first direction may be a direction from the second electrode layer toward the first electrode.

The conductive layer may be a transparent conductive oxide.

The second electrode layer may include a reflective layer disposed under the second conductivity type semiconductor layer; And a support substrate disposed under the reflective layer.

The light emitting device may further include a passivation layer disposed on the reflective member.

The insulating layer may be made of a light-transmitting material.

Alternatively, the insulating layer may be a dispersed Bragg reflective layer.

The first electrode may include an external electrode disposed along an edge of an upper surface of the first conductivity type semiconductor layer; And an internal electrode disposed inside the external electrode, and one end of the conductive layer may contact the external electrode, and the other end of the conductive layer may contact the insulating layer.

The embodiment may improve light extraction efficiency.

1 is a plan view of a light emitting device according to an embodiment.
FIG. 2 is a cross-sectional view of the light emitting device shown in FIG. 1 in the AB direction.
3 is a cross-sectional view of a light emitting device according to another embodiment.
4 is a cross-sectional view of a light emitting device according to another embodiment.
FIG. 5 shows current diffusion by the conductive layer shown in FIG. 1 and reflection of light by the reflective member.
6 shows a light emitting device package according to an embodiment.
7 shows a lighting device including a light emitting device according to an embodiment.
8 illustrates a display device including a light emitting device package according to an exemplary embodiment.

Hereinafter, embodiments will be clearly revealed through the accompanying drawings and descriptions of the embodiments. In the description of the embodiment, each layer (film), region, pattern, or structure is "on" or "under" of the substrate, each layer (film), region, pad or patterns. In the case of being described as being formed in, "on" and "under" include both "directly" or "indirectly" formed do. In addition, the standards for the top/top or bottom/bottom of each layer will be described based on the drawings.

In the drawings, the sizes are exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Also, the size of each component does not fully reflect the actual size. Also, the same reference numerals denote the same elements throughout the description of the drawings. Hereinafter, a light emitting device according to an embodiment will be described with reference to the accompanying drawings.

1 is a plan view of a light emitting device 100 according to an embodiment, and FIG. 2 is a cross-sectional view of the light emitting device 100 shown in FIG. 1 in the AB direction.

1 and 2, the light emitting device 100 includes a second electrode layer 105, a protective layer 140, a current blocking layer 145, a light emitting structure 150, and a first electrode 160. ), an insulating layer 170, a conductive layer 180, and a reflective member 190.

The second electrode layer 105 provides power to the light emitting structure 150 together with the first electrode 160. The first electrode 160 may be disposed on the light-emitting structure 150, and the second electrode layer 105 may be disposed under the light-emitting structure 150.

The second electrode layer 105 includes a supporting substrate 110, a bonding layer 115, a barrier layer 120, a reflective layer 125, and an ohmic layer 130. ) Can be included.

The support substrate 110 may support the light emitting structure 150.

The support substrate 110 may be formed of a metal or semiconductor material. In addition, the support substrate 110 may be formed of a material having high electrical conductivity and thermal conductivity.

For example, the support substrate 110 includes at least one of copper (Cu), copper alloy, gold (Au), nickel (Ni), molybdenum (Mo), and copper-tungsten (Cu-W). It may be a metal material, or a semiconductor including at least one of Si, Ge, GaAs, ZnO, and SiC.

The bonding layer 115 may be disposed between the support substrate 110 and the diffusion barrier layer 120, and may serve as a bonding layer bonding the support substrate 110 and the diffusion barrier layer 120. .

The bonding layer 115 may include a metal material, for example, at least one of In, Sn, Ag, Nb, Pd, Ni, Au, Cu, and Pt. Since the bonding layer 115 is formed to bond the support substrate 110 by a bonding method, it may be omitted when the support substrate 110 is formed by a plating or deposition method.

The diffusion preventing layer 120 may be disposed between the bonding layer 115 and the reflective layer 125, and between the bonding layer 115 and the protective layer 140. When the bonding layer 115 is omitted, the diffusion prevention layer 120 may be disposed between the support substrate 110 and the reflective layer 125 and between the support substrate 110 and the protective layer 140.

The diffusion prevention layer 120 may prevent metal ions of the bonding layer 115 and the support substrate 110 from diffusing into the light emitting structure 150 through the reflective layer 125 and the ohmic layer 130.

For example, the diffusion barrier layer 120 may include at least one of a material that blocks metal diffusion, such as Ni, Pt, Ti, W, V, Fe, and Mo, and may be formed of a single layer or multiple layers.

The reflective layer 125 may be disposed on the anti-diffusion layer 120 and reflects light incident from the light emitting structure 150, thereby improving light extraction efficiency.

The reflective layer 125 may be formed of a light reflective material, for example, a metal or alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf.

Alternatively, the reflective layer 125 may be formed as a single layer or a multilayer using a metal or an alloy and a transparent conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO. For example, the reflective layer 125 may be formed of IZO/Ni, AZO/Ag, IZO/Ag/Ni, AZO/Ag/Ni, or the like.

The ohmic layer 130 may be disposed between the reflective layer 125 and the second conductivity-type semiconductor layer 152, and is in ohmic contact with the second conductivity-type semiconductor layer 152 to form the second electrode layer 105. From, power may be smoothly supplied to the light emitting structure 150.

The ohmic layer 130 may be formed by selectively using a light-transmitting conductive layer and a metal. For example, the ohmic layer 130 is a metal material in ohmic contact with the second conductivity type semiconductor layer 152, such as at least one of Ag, Ni, Cr, Ti, Pd, Ir, Sn, Ru, Pt, Au, and Hf It may include.

The protective layer 140 may be disposed on the edge region of the second electrode layer 105.

For example, the protective layer 140 may be formed on the edge region of the ohmic layer 130, the reflection layer 125, or the diffusion barrier layer 120, or on the edge region of the support substrate 110. Can be placed on

The protective layer 140 may prevent the reliability of the light-emitting device 100 from deteriorating due to peeling off the interface between the light-emitting structure 150 and the second electrode layer 105. The protective layer 140 is a non-conductive material, for example, ZnO, SiO ₂ , Si ₃ N ₄ , TiOx (x is a positive real number), or Al ₂ O ₃ It can be formed by the like.

The current blocking layer 145 may be disposed between the ohmic layer 130 and the second conductivity type semiconductor layer 152 of the light emitting structure 150, and at least part of the first electrode 160 may overlap in a vertical direction. I can. The current blocking layer 145 may improve light efficiency by dispersing current in the light emitting structure 150.

The upper surface of the current blocking layer 145 may be in contact with the second conductivity type semiconductor layer 152, and the lower surface of the current blocking layer 145 or the lower surface and side surfaces of the current blocking layer 145 are ohmic layers 130. Can contact with

The current blocking layer 145 may be formed between the ohmic layer 130 and the second conductivity type semiconductor layer 152, or between the reflective layer 125 and the ohmic layer 130, but is not limited thereto.

The light emitting structure 150 may be disposed on the ohmic layer 130 and the protective layer 140 and may generate light.

The side surface of the light emitting structure 150 may be an inclined surface during an isolation etching process that is divided into unit chips. For example, the side surface of the light emitting structure 150 may be a reverse slope. That is, the area or diameter of the light emitting structure may increase as the proceeding in the first direction increases, and the first direction may be a direction from the second electrode layer 105 to the first electrode 160.

For example, the angle θ formed between the side surface and the horizontal plane of the light emitting structure 150 may be 45° or more and 90° or less, but is not limited thereto. In another embodiment, the angle θ formed between the side surface of the light emitting structure 150 and the horizontal plane may be 90° or more. Here, the horizontal plane may be a plane parallel to the top surface of the second electrode layer 105 or a plane perpendicular to the direction in which the second conductivity-type semiconductor layer 152, the active layer 154, and the first conductivity-type semiconductor layer 156 are stacked. have.

This is to reflect light traveling toward the side of the light emitting structure 150 by the reflective member 190 toward the upper surface of the light emitting structure 150 by making the light emitting structure 150 have an inclined surface.

The light emitting structure 150 includes a second conductivity type semiconductor layer 152, an active layer 154, and a first conductivity type semiconductor layer 156.

The second conductivity type semiconductor layer 152, the active layer 154, and the first conductivity type semiconductor layer 156 may be sequentially stacked on the second electrode layer 105.

The second conductivity type semiconductor layer 152 may be disposed on the ohmic layer 130 and the protective layer 140, may be a semiconductor compound such as group 3-5, group 2-6, etc. Type dopant may be doped.

The second conductivity type semiconductor layer 152 may be a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). . For example, the second conductivity-type semiconductor layer 152 may include any one of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, and a p-type dopant (eg, Mg, Zn, Ca, Sr, Ba) is doped. Can be.

The active layer 154 may be disposed on the second conductivity type semiconductor layer 152. The active layer 154 emits light by energy generated in the recombination process of electrons and holes provided from the first and second conductivity-type semiconductor layers 156 and 152. Can be generated.

The active layer 154 may be a semiconductor compound such as a group 3-5, a group 2-6, for example, a compound semiconductor of a group 3-5, a group 2-6, and a single well structure, a multiple well structure, or both It may have a line (Quantum-Wire) structure, a quantum dot (Quantum Dot), or a quantum disk (Quantum Disk) structure.

The active layer 154 may have a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). When the active layer 154 has a quantum well structure, the active layer 154 has a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) A well layer (not shown) and a barrier layer (not shown) having a composition formula of In _a Al _b Ga _{1 -a- b} N ( _{0≤a≤1, 0≤b≤1, 0≤a} +b≤1) ) Can be included.

The energy band gap of the well layer may be smaller than the energy band gap of the barrier layer. The well layer and the barrier layer may be alternately stacked at least once or more.

The energy band gap of the well layer and the barrier layer may be constant in each section, but is not limited thereto. For example, the composition of indium (In) and/or aluminum (Al) of the well layer may be constant, and the composition of indium (In) and/or aluminum (Al) of the barrier layer may be constant.

Alternatively, the energy band gap of the well layer may include a section that gradually increases or decreases, and the energy band gap of the barrier layer may include a section that gradually increases or decreases. For example, the composition of indium (In) and/or aluminum (Al) in the well layer may gradually increase or decrease. In addition, the composition of indium (In) and/or aluminum (Al) of the barrier layer may gradually increase or decrease.

The first conductivity type semiconductor layer 156 is disposed on the active layer 154 and may be a compound semiconductor such as group 3-5, group 2-6, or the like, and may be doped with a first conductivity type dopant.

The first conductivity type semiconductor layer 156 may be a semiconductor having a composition formula of In _x Al _y Ga _{1 -xy} N (0≦x≦1, 0<y≦1, 0≦x+y≦1). The first conductivity type semiconductor layer 156 may include any one of a nitride semiconductor including aluminum, such as InAlGaN, AlGaN, or AlN, and doped with an n-type dopant (eg, Si, Ge, Se, Te). Can be.

For example, a conductivity-type clad layer may be disposed between the active layer 154 and the first conductivity-type semiconductor layer 156 or between the active layer 154 and the second conductivity-type semiconductor layer 152. The type cladding layer may be a nitride semiconductor (eg, AlGaN, GaN, or InAlGaN).

The light emitting structure 150 may further include a third semiconductor layer (not shown) between the second conductivity type semiconductor layer 152 and the second electrode layer 105, and the third semiconductor layer is a second conductivity type semiconductor layer. (152) can have the opposite polarity. In addition, in another embodiment, the first conductivity-type semiconductor layer 156 may be implemented as a p-type semiconductor layer, and the second conductivity-type semiconductor layer 152 may be implemented as an n-type semiconductor layer. Accordingly, the light emitting structure 150 is NP It may include at least one of a junction, a PN junction, an NPN junction, or a PNP junction structure.

Roughness or unevenness may be formed on the upper surface of the first conductivity type semiconductor layer 156 to increase light extraction efficiency. In addition, roughness (not shown) may be formed on the surface of the first electrode 160 in order to increase the light extraction efficiency.

The first electrode 160 may include pad portions 102a and 102b to which a wire is bonded, and a branch electrode portion extending from the pad portions 102a and 102b. At this time, the branch electrode part is disposed inside the external electrodes 92a, 92b, 92c, 92d and the external electrodes 92a, 92b, 92c, 92d disposed along the upper edge of the first conductivity type semiconductor layer 156. It may include internal electrodes 94a and 94b. The first electrode 160 may be implemented in various pattern shapes to disperse current.

The insulating layer 170 is disposed on the side surface of the second conductivity type semiconductor layer 152 and the side surface of the active layer 154. For example, the insulating layer 170 covers the side surfaces of the second conductivity type semiconductor layer 152 and the side surfaces of the active layer 154.

The insulating layer 170 may also be disposed on a part of the first conductivity type semiconductor layer 156 adjacent to the active layer 154. For example, one end of the insulating layer 170 may be positioned higher than the upper surface of the active layer 154. This is to stably insulate the second conductivity type semiconductor layer 152 and the conductive layer 180 from each other.

The insulating layer 170 is a light-transmitting insulating material, such as SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , or Al ₂ O ₃ to be formed I can.

The conductive layer 180 is disposed on the side surface of the first conductivity type semiconductor layer 156 and the insulating layer 170, and may contact the side surface of the first conductivity type semiconductor layer 156 and the insulating layer 170. I can.

For example, the conductive layer 180 may directly contact a portion of the side surface of the first conductivity type semiconductor layer 156. The conductive layer 180 may be a light-transmitting and conductive material. The conductive layer 180 is a transparent conductive oxide, for example, ITO (Indium Tin Oxide), TO (Tin Oxide), IZO (Indium Zinc Oxide), ITZO (Indium Tin Zinc Oxide), IAZO (Indium Aluminum Zinc Oxide), IGZO ( Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), AZO (Aluminum Zinc Oxide), ATO (Antimony tin Oxide), GZO (Gallium Zinc Oxide), IrOx, RuOx, RuOx/ITO, Ni, Ag, Ni/IrOx It may be made of at least one of /Au or Ni/IrOx/Au/ITO, and may have a single layer or multilayer structure.

One end of the conductive layer 180 may contact the reflective member 190, and the other end may contact the insulating layer 170 and the protective layer 140, but is not limited thereto.

The conductive layer 180 may serve to improve adhesion between the reflective member 190 and the light emitting structure 150. That is, when the reflective member 190 made of a metal material is formed directly on the side of the light emitting structure as a semiconductor layer, since the adhesive force between the reflective member 190 and the light emitting structure 150 is weak, the reflective member 190 may be easily separated. . However, since the conductive layer 180 is a conductive oxide layer, adhesion between the reflective member 190 and the light emitting structure 150 may be improved.

By forming the conductive layer 180 on the insulating layer 170 as well, the adhesion between the reflective member 190 and the insulating layer 170 may be improved.

The reflective member 190 is disposed on the conductive layer 180 and is electrically connected to the first electrode 160. For example, one end of the reflective member 190 may contact the external electrodes 92a, 92b, 92c, and 92d of the first electrode 160, and the other end of the reflective member 190 may be connected to the protective layer 140 It may be contacted, but is not limited thereto.

The reflective member 190 may be disposed on the side of the light emitting structure 150. For example, the reflective member 190 may cover the entire side surface of the light emitting structure 150.

The insulating layer 170 may be disposed between the reflective member 190 and the active layer 154, and between the reflective member 190 and the second conductivity type semiconductor layer 152.

The conductive layer 180 may be disposed between the reflective member 190 and the first conductive semiconductor layer 156, and between the reflective member 190 and the insulating layer 170.

FIG. 5 shows current diffusion 102 by the conductive layer 180 shown in FIG. 1 and reflections 201 and 202 of light by the reflective member 190.

Referring to FIG. 5, power is supplied from the external electrodes 92a, 92b, 92c, and 92d of the first electrode 160 through the conductive layer 180 to the side of the light emitting structure 150, for example, a first conductivity type semiconductor layer. Can be supplied to the side of 156.

The current supplied to the first conductivity type semiconductor layer 156 is a first current 101 flowing to the upper surface of the first conductivity type semiconductor layer 156 in direct contact with the first electrode 160, and the conductive layer 180. ) May include a second current 102 flowing to the side of the first conductivity type semiconductor layer 156.

In the embodiment, since current is also supplied to the side surface of the first conductivity-type semiconductor layer 156 by the conductive layer 180, the current can be dispersed to improve luminous efficiency.

Light 201 generated from the active layer 154 and traveling toward the side of the light emitting structure 150 may be reflected in the upper direction of the light emitting structure 150 by the reflective member 190, and the light reflected in the upper direction Since 202 may be extracted outside the upper portion of the light emitting structure 150, the embodiment may improve light extraction efficiency by blocking light lost to the side of the light emitting structure 150.

3 is a cross-sectional view of a light emitting device 200 according to another embodiment. The same reference numerals as in FIGS. 1 and 2 denote the same configuration, and the description of the same configuration is simplified or omitted.

Referring to FIG. 3, the light emitting device 200 includes a second electrode layer 105, a protective layer 140, a current blocking layer 145, a light emitting structure 150, a first electrode 160, and insulation. A layer 170-1, a conductive layer 180, and a reflective member 190 are included.

The insulating layer 170-1 illustrated in FIG. 3 may be a Distributed Bragg Reflector layer.

The insulating layer 170-1 may have a structure in which two layers having different refractive indices are alternately stacked at least once or more, and may reflect incident light.

For example, the insulating layer 170-1 may include a first layer 172 disposed adjacent to a side surface of the light emitting structure 150 and a second layer 174 disposed on the first layer 172. have. The refractive index of the second layer 174 may be greater than the refractive index of the first layer 172, the thickness of each of the first layer 172 and the second layer 174 is λ/4, and λ is the light emitting structure 150 ) May be a wavelength of light generated at.

For example, the first layer may be SiO ₂ and the second layer may be TiO ₂ , but the present invention is not limited thereto.

The insulating layer 170-1 serves to reflect the light irradiated from the active layer 154 to the side of the light emitting structure 150 to the top of the light emitting structure 150 as well as the insulating role described in FIGS. 1 and 2. I can.

4 is a cross-sectional view of a light emitting device 300 according to another embodiment. The same reference numerals as in FIGS. 1 and 2 denote the same configuration, and the description of the same configuration will be simplified or omitted.

Referring to FIG. 4, compared to the embodiment illustrated in FIG. 1, the light emitting device 300 may further include a passivation layer 310.

The passivation layer 310 may be disposed on the reflective member 190 to electrically protect the light emitting structure 150.

The passivation layer 310 may be formed to cover the reflective member 190 and part of the side surfaces and upper surfaces of the first conductivity type semiconductor layer 156. The passivation layer 310 is an insulating material, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , or Al ₂ O ₃ to be formed However, it is not limited thereto.

6 shows a light emitting device package according to an embodiment.

6, the light emitting device package includes a package body 510, a first conductive layer 512, a second conductive layer 514, a light emitting device 520, a reflector 530, a wire 530, and Includes stratum 540.

The package body 510 may be formed of a substrate having good insulation or thermal conductivity such as a silicon-based wafer level package, a silicon substrate, silicon carbide (SiC), aluminum nitride (AlN), etc., It may be a structure in which a plurality of substrates are stacked. The embodiment is not limited to the material, structure, and shape of the body described above.

The package body 510 may have a cavity formed of a side surface and a bottom in one area of the upper surface. At this time, the sidewall of the cavity may be formed to be inclined.

The first conductive layer 512 and the second conductive layer 514 are disposed on the surface of the package body 510 to be electrically separated from each other in consideration of heat dissipation or mounting of a light emitting device. The light emitting device 520 may be electrically connected to the first conductive layer 512 and the second conductive layer 514. In this case, the light emitting device 520 may be any one of the embodiments 100, 200, and 300.

The reflector 530 may be disposed on the sidewall of the cavity of the package body 510 to direct light emitted from the light emitting device 520 in a predetermined direction. The reflector 530 is made of a light reflective material, and may be, for example, a metal coating or a metal flake.

The resin layer 540 surrounds the light-emitting element 520 located in the cavity of the package body 510 to protect the light-emitting element 520 from an external environment. The resin layer 540 may be made of a colorless transparent polymer resin material such as epoxy or silicone. The resin layer 540 may include a phosphor to change the wavelength of light emitted from the light emitting device 520.

A plurality of light emitting device packages according to the embodiment may be arrayed on a substrate, and an optical member such as a light guide plate, a prism sheet, and a diffusion sheet may be disposed on an optical path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member may function as a backlight unit.

Another embodiment may be implemented as a display device, an indication device, or a lighting system including the light emitting device or the light emitting device package described in the above-described embodiments. For example, the lighting system may include a lamp and a street light.

7 shows a lighting device including a light emitting device according to an embodiment.

Referring to FIG. 7, the lighting device may include a cover 1100, a light source module 1200, a radiator 1400, a power supply unit 1600, an inner case 1700, and a socket 1800. In addition, the lighting device according to the embodiment may further include one or more of the member 1300 and the holder 1500.

The light source module 1200 may include any one of the light emitting devices 100, 200, and 30 illustrated in FIGS. 2 to 4, or a light emitting device package illustrated in FIG. 6.

The cover 1100 may have a shape of a bulb or a hemisphere, and may have a shape with a hollow and an open portion. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 may be coupled to the radiator 1400. The cover 1100 may have a coupling portion that is coupled to the radiator 1400.

A milky white paint may be coated on the inner surface of the cover 1100. The milky white paint may include a diffuser that diffuses light. The surface roughness of the inner surface of the cover 1100 may be larger than the surface roughness of the outer surface of the cover 1100. This is to sufficiently scatter and diffuse light from the light source module 1200 to emit it to the outside.

The material of the cover 1100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 1100 may be transparent so that the light source module 1200 is visible from the outside, but is not limited thereto and may be opaque. The cover 1100 may be formed through blow molding.

The light source module 1200 may be disposed on one surface of the radiator 1400, and heat generated from the light source module 1200 may be conducted to the radiator 1400. The light source module 1200 may include a light source unit 1210, a connection plate 1230, and a connector 1250.

The member 1300 may be disposed on the upper surface of the radiator 1400 and has a plurality of light source units 1210 and a guide groove 1310 into which the connector 1250 is inserted. The guide groove 1310 may correspond to or be aligned with the substrate and the connector 1250 of the light source unit 1210.

The surface of the member 1300 may be coated or coated with a light reflective material.

For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 may reflect light reflected on the inner surface of the cover 1100 and returning toward the light source module 1200 back toward the cover 1100. Therefore, it is possible to improve the light efficiency of the lighting device according to the embodiment.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Accordingly, electrical contact may be made between the radiator 1400 and the connection plate 1230. The member 1300 may be formed of an insulating material to block an electrical short between the connection plate 1230 and the radiator 1400. The radiator 1400 may receive heat from the light source module 1200 and heat from the power supply unit 1600 to radiate heat.

The holder 1500 blocks the receiving groove 1719 of the insulating part 1710 of the inner case 1700. Accordingly, the power supply unit 1600 accommodated in the insulating unit 1710 of the inner case 1700 may be sealed. The holder 1500 may have a guide protrusion 1510, and the guide protrusion 1510 may have a hole through which the protrusion 1610 of the power supply unit 1600 passes.

The power supply unit 1600 processes or converts an electrical signal provided from the outside and provides it to the light source module 1200. The power supply unit 1600 may be accommodated in the storage groove 1919 of the inner case 1700, and may be sealed inside the inner case 1700 by the holder 1500. The power supply unit 1600 may include a protrusion 1610, a guide unit 1630, a base 1650, and an extension 1670.

The guide part 1630 may have a shape protruding from one side of the base 1650 to the outside. The guide part 1630 may be inserted into the holder 1500. A number of parts may be disposed on one surface of the base 1650. A number of components include, for example, a DC converter that converts AC power provided from an external power source into a DC power source, a driving chip that controls the driving of the light source module 1200, and an electrostatic device (ESD) for protecting the light source module 1200. discharge) protection element, etc., but is not limited thereto.

The extension part 1670 may have a shape protruding outward from the other side of the base 1650. The extension part 1670 may be inserted into the connection part 1750 of the inner case 1700 and may receive an electrical signal from the outside. For example, the extension part 1670 may be the same as or less than the width of the connection part 1750 of the inner case 1700. Each end of the "+ wire" and "- wire" may be electrically connected to the extension part 1670, and the other end of the "+ wire" and "- wire" may be electrically connected to the socket 1800. .

The inner case 1700 may include a molding unit together with a power supply unit 1600 therein. The molding portion is a portion in which the molding liquid is solidified, and allows the power supply unit 1600 to be fixed inside the inner case 1700.

8 illustrates a display device including a light emitting device package according to an exemplary embodiment.

Referring to FIG. 8, the display device 800 includes a bottom cover 810, a reflective plate 820 disposed on the bottom cover 810, light emitting modules 830 and 835 emitting light, and a reflecting plate 820. ) And an optical sheet including a light guide plate 840 disposed in front of the light guide plate 840 and guiding light emitted from the light emitting modules 830 and 835 to the front of the display device, and prism sheets 850 and 860 disposed in front of the light guide plate 840, A display panel 870 disposed in front of the optical sheet, an image signal output circuit 872 connected to the display panel 870 and supplying an image signal to the display panel 870, and disposed in front of the display panel 870 A color filter 880 may be included. Here, the bottom cover 810, the reflector 820, the light emitting modules 830 and 835, the light guide plate 840, and the optical sheet may form a backlight unit.

The light emitting module may include light emitting device packages 835 mounted on the substrate 830. Here, the substrate 830 may be a PCB or the like. The light emitting device package 835 may be the embodiment shown in FIG. 6.

The bottom cover 810 may accommodate components in the display device 800. In addition, the reflective plate 820 may be provided as a separate component as shown in the drawing, and may be provided in a form coated with a material having high reflectivity on the rear surface of the light guide plate 840 or the front surface of the bottom cover 810. .

Here, the reflective plate 820 may be made of a material that has high reflectivity and is ultra-thin, and may be made of polyethylene terephtalate (PET).

Further, the light guide plate 830 may be formed of polymethylmethacrylate (PMMA), polycarbonate (PC), or polyethylene (PolyEthylene; PE).

In addition, the first prism sheet 850 may be formed of a light-transmitting and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be repeatedly provided in a stripe type with floors and valleys as shown.

In addition, in the second prism sheet 860, the directions of the ridges and valleys on one surface of the support film may be perpendicular to the direction of the ridges and valleys on one surface of the support film in the first prism sheet 850. This is to evenly distribute the light transmitted from the light emitting module and the reflective sheet to the front surface of the display panel 1870.

Further, although not shown, a diffusion sheet may be disposed between the light guide plate 840 and the first prism sheet 850. The diffusion sheet may be made of polyester and polycarbonate-based materials, and the light projection angle may be maximized through refraction and scattering of light incident from the backlight unit. In addition, the diffusion sheet includes a support layer containing a light diffusing agent, a first layer and a second layer formed on the light exit surface (in the direction of the first prism sheet) and the light incident surface (in the direction of the reflection sheet) and do not contain a light diffusion agent. It may include.

In the embodiment, the diffusion sheet, the first prism sheet 850, and the second prism sheet 860 form an optical sheet, and the optical sheet is formed of a different combination, for example, a micro lens array, or a diffusion sheet and a micro lens array. Or a combination of a single prism sheet and a micro lens array.

The display panel 870 may include a liquid crystal display. In addition to the liquid crystal display panel 860, other types of display devices requiring a light source may be provided.

Features, structures, effects, etc. described in the embodiments above are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Further, the features, structures, effects, etc. illustrated in each embodiment may be combined or modified for other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the present invention.

105: second electrode layer 110: support substrate
115: bonding layer 120: diffusion preventing layer
125: reflective layer 130: ohmic layer
140: protective layer 145: current blocking layer
150: light emitting structure 160: first electrode
170: insulating layer 180: conductive layer
190: reflective member.

Claims (9)

A light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
A first electrode disposed on the first conductivity type semiconductor layer;
A second electrode layer disposed under the second conductivity type semiconductor layer;
A protective layer disposed between the edge region of the second electrode layer and the second conductivity type semiconductor layer;
A reflective member disposed on a side surface of the first conductivity type semiconductor layer, a side surface of the second conductivity type semiconductor layer, and a side surface of the active layer and electrically connected to the first electrode;
A conductive layer disposed between the reflective member and a side surface of the first conductive type semiconductor layer, between the reflective member and a side surface of the second conductive type semiconductor layer, and between the reflective member and a side surface of the active layer; And
And an insulating layer disposed between the conductive layer and the side surface of the active layer and between the conductive layer and the side surface of the second conductive semiconductor layer,
The conductive layer is in contact with the reflective member and a side surface of the first conductive semiconductor layer, an upper end of the conductive layer is in contact with the first electrode, and the conductive layer is in contact with the first electrode and the first conductive semiconductor layer Electrically connecting the layers,
Part of the conductive layer is disposed between the reflective member and the insulating layer, and is in contact with the insulating layer,
The lower end of the conductive layer is in contact with the upper surface of the protective layer, the lower end of the reflective member is in contact with the upper surface of the protective layer,
The reflective member is made of a metallic material, and the conductive layer is a transparent conductive oxide. delete The method of claim 1,
The reflective member covers all sides of the light emitting structure,
The area of the light-emitting structure increases as it progresses in the first direction,
The first direction is a direction from the second electrode layer toward the first electrode. delete The method of claim 1,
Including a passivation layer disposed on the reflective member,
The second electrode layer includes a reflective layer disposed under the second conductivity type semiconductor layer and a support substrate disposed under the reflective layer,
A light emitting device in which a lower end of the conductive layer and a lower end of the reflective member are positioned above an upper surface of the second electrode layer. delete delete The method of claim 1,
The insulating layer is made of a light-transmitting material, a light emitting device that is a dispersed Bragg reflective layer. The method of claim 1, wherein the first electrode,
An external electrode disposed along an edge of an upper surface of the first conductivity type semiconductor layer; And
And an internal electrode disposed inside the external electrode,
An upper end of the conductive layer is in contact with the external electrode, and a lower end of the conductive layer is in contact with the insulating layer and the protective layer.

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