KR102140273B1 - Light emitting device and light emitting device package including the same - Google Patents

Abstract

The light emitting device package of the embodiment includes a header and a light emitting device disposed in a cavity on the header, and the light emitting device includes a substrate and a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer disposed under the substrate A light emitting structure, a sub-mount, first and second metal pads electrically spaced apart from the sub-mount, first bumps and second metal pads disposed between the first metal pad and the first conductive type semiconductor layer, A second bump disposed between the second conductivity-type semiconductor layers, the first conductivity-type semiconductor layer being in a first region and a plane formed to surround all sides of the active region in which the second conductivity-type semiconductor layer is disposed in a plane It includes at least one second region having a shape surrounded by the active region and having a first bump.

Description

Light emitting device and light emitting device package including the same {Light emitting device and light emitting device package including the same}

The embodiment relates to a light emitting device and a light emitting device package including the same.

A light emitting diode (LED) is a type of semiconductor device used as a light source or a signal by converting electricity into infrared rays or light using characteristics of a compound semiconductor.

Group III-V nitride semiconductors are spotlighted as core materials for light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties.

These light emitting diodes do not contain environmentally harmful substances such as mercury (Hg) used in existing lighting fixtures such as incandescent lamps and fluorescent lamps, and thus have excellent eco-friendliness, and have advantages such as long life and low power consumption characteristics. Is replacing them.

1 shows a top view of a conventional light emitting device.

The conventional light emitting device shown in FIG. 1 includes n-type semiconductor layer 10, active region 20, p-type bumps 30-1, 30-2, 30-3 and n-type bump 40 It consists of.

The conventional light emitting device, although not shown in FIG. 1, further includes a p-type semiconductor layer and a light emitting layer in the active region 20. The light emitting layer is disposed on the n-type semiconductor layer 10, and the p-type semiconductor layer is disposed on the light emitting layer. Various studies have been conducted to increase the luminous efficiency of the conventional light emitting device having the structure shown in FIG. 1.

The embodiment provides a light emitting device having improved light emitting efficiency and a light emitting device package including the same.

The light emitting device package of the embodiment includes a header; And a light emitting device disposed in the cavity on the header, wherein the light emitting device includes a substrate; A light emitting structure disposed under the substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; Sub-mount; First and second metal pads electrically spaced apart from the sub-mount; A first bump disposed between the first metal pad and the first conductivity type semiconductor layer; And a second bump disposed between the second metal pad and the second conductivity-type semiconductor layer, wherein the first conductivity-type semiconductor layer is planar in all directions of the active region in which the second conductivity-type semiconductor layer is disposed. A first region formed to surround; And at least one second region having a shape surrounded in all directions by the active region in a plane and in which the first bumps are disposed.

The light emitting device may include a connecting metal layer electrically connecting the first region and the second region of the first conductive semiconductor layer to each other; And an insulating layer disposed between the second conductive type semiconductor layer and the connecting metal layer and between the active layer and the connecting metal layer, and the first bump can be disposed between the connecting metal layer and the first metal pad. have.

The plane distance between the edge of the light emitting device and the active region may be 19 μm to 70 μm.

The active region may have a variable width along the length direction or a constant width.

The active region may include a third region connected to the second bump; And a fourth region between the third regions, and a plane width of the fourth region may be smaller than a plane width of the third region.

The first bump may not be disposed in the second region.

The light emitting device may include a first electrode disposed between the connection metal layer and the first conductivity type semiconductor layer in the second region; And a second electrode disposed between the second conductivity type semiconductor layer and the second bump.

The first electrode may be disposed in at least one of the first or second regions. Each of the first and second electrodes may have a double layer structure.

The second bump may have a symmetrical shape in the plane, or the active region may have a symmetrical shape in the plane.

The light emitting device package is disposed on the header side wall portion forming the cavity; First and second wires electrically connected to the first and second metal pads of the light emitting element, respectively; First and second lead wires electrically connected to the first and second metal pads through the first and second wires, respectively; And a molding member filled in the cavity and disposed to surround the light emitting device.

The light emitting device and the light emitting device package including the same according to the embodiment maximize the luminous efficiency and are suitable for large currents because the active area is disposed close to the edge of the light emitting device, and the active area facing the edge of the light emitting device is curved flat It has excellent heat dissipation efficiency.

1 shows a top view of a conventional light emitting device.
2 is a plan view of a light emitting device according to an embodiment.
3 is a cross-sectional view taken along line I-I' shown in FIG. 2.
4 is a cross-sectional view taken along line II-II' shown in FIG. 2.
5 is a plan view of only the first and second conductivity-type semiconductor layers in the light emitting devices illustrated in FIGS. 2 to 4.
6 to 12 are views for explaining a method of manufacturing the light emitting device shown in FIGS. 2 to 4.
13 is a plan view of a light emitting device according to another embodiment.
14 is a plan view of only the first and second conductivity-type semiconductor layers in the light emitting device illustrated in FIG. 13.
15A to 15C are process plan views illustrating a method of manufacturing the light emitting device shown in FIG. 13.
16A to 16D show light emission images of the conventional light emitting device shown in FIG. 1.
17A and 17B show the conventional light emitting device shown in FIG. 1 having different distances between the active region and the edge of the light emitting device.
18 is a cross-sectional view of a light emitting device package according to an embodiment.
19 illustrates a display device including a light emitting device package according to an embodiment.
20 shows a head lamp including a light emitting device package according to an embodiment.
21 shows a lighting device including a light emitting device or a light emitting device package according to an embodiment.

Hereinafter, examples will be described to specifically describe the present invention, and the present invention will be described in detail with reference to the accompanying drawings. However, the embodiments according to the present invention may be modified in various other forms, and the scope of the present invention should not be interpreted as being limited to the embodiments described below. Embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art.

In the description of this embodiment, when described as being formed on "on (up) or down (down)" (on or under) of each element (element), the top (up) or bottom (bottom) ( on or under includes both two elements directly contacting each other or one or more other elements being formed indirectly between the two elements.

In addition, when expressed as "up (up)" or "down (down) (on or under)", it may include the meaning of the downward direction as well as the upward direction based on one element.

In addition, relational terms, such as “first” and “second,” “upper” and “lower”, as used below, do not necessarily require or imply any physical or logical relationship or order between such entities or elements. Thus, it may be used only to distinguish one entity or element from another entity or element.

Hereinafter, a light emitting device 100A according to an embodiment will be described with reference to the accompanying drawings.

2 is a plan view of a light emitting device 100A according to an embodiment, FIG. 3 is a cross-sectional view taken along the line I-I' shown in FIG. 2, and FIG. 4 is II-II shown in FIG. 'Shows a cross-sectional view taken along the line, and FIG. 5 shows a plan view of only the first and second conductivity-type semiconductor layers 132 and 136 in the light emitting device 100A illustrated in FIGS. 2 to 4.

2 to 5, the light emitting device 100A includes a substrate 110, a buffer layer 112, a light emitting structure 130, a submount 140, first and second metal pads 152, 154), first and second bumps 162, 164, connecting metal layer 170, insulating layer (or interlayer insulating film) 180, 182, first electrodes 192-1, 192-2, and second It includes an electrode 194.

The light emitting structure 130 is disposed under the substrate 110.

The substrate 110 may include a light-transmissive material. For example, the substrate 110 may include at least one of sapphire (Al ₂ 0 ₃ ), GaN, SiC, ZnO, GaP, InP, Ga ₂ 0 ₃ , GaAs, or Si.

A buffer layer 112 may be further disposed between the substrate 110 and the light emitting structure 130.

The buffer layer 112 may be disposed between the 110 and 130 to improve the difference in thermal expansion coefficient and lattice mismatch between the substrate 110 and the light emitting structure 130. The buffer layer 112 may include a light-transmitting material, and may include, for example, at least one material selected from the group consisting of Al, In, N, and Ga, but is not limited thereto. Further, the buffer layer 112 may have a single-layer or multi-layer structure. In some cases, the buffer layer 112 may be omitted.

The light emitting structure 130 includes a first conductivity type semiconductor layer 132, an active layer 134, and a second conductivity type semiconductor layer 136.

The first conductivity-type semiconductor layer 132 is disposed between the buffer layer 112 and the active layer 134, and may be formed of a compound semiconductor such as a III-V group or a II-VI group doped with a first conductivity-type dopant. . When the first conductivity-type semiconductor layer 132 is an n-type semiconductor layer, the first conductivity-type dopant is an n-type dopant, and may include, but is not limited to, Si, Ge, Sn, Se, Te.

The first conductive semiconductor layer 132 may include a light-transmitting material, for example, Al _x In _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x+y≤ It may include a semiconductor material having a composition formula of 1). The first conductivity-type semiconductor layer 132 may include any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.

The active layer 134 is disposed between the first conductivity-type semiconductor layer 132 and the second conductivity-type semiconductor layer 136, and electrons (or holes) injected through the first conductivity-type semiconductor layer 132 are formed. The hole (or electron) injected through the two-conductivity-type semiconductor layer 136 meets each other, and is a layer that emits light having energy determined by an energy band unique to the material constituting the active layer 134. The active layer 134 may have at least one of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. It can be formed as one.

The well layer/barrier layer of the active layer 134 may be formed of any one or more pair structures of InGaN/GaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/GaN, GaAs(InGaAs)/AlGaAs, GaP(InGaP)/AlGaP. However, it is not limited thereto. The well layer may be formed of a material having a band gap energy lower than that of the barrier layer.

A conductive clad layer (not shown) may be formed above or/or below the active layer 134. The conductive clad layer may be formed of a semiconductor having a band gap energy higher than that of the barrier layer of the active layer 134. For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, or superlattice structures. In addition, the conductive clad layer may be doped with n-type or p-type. For example, the active layer 134 may emit light in an ultraviolet wavelength band of 100 nm to 400 nm, for example, 100 nm to 280 nm.

The second conductivity-type semiconductor layer 136 is disposed under the active layer 134 and may be formed of a semiconductor compound. It may be implemented with a compound semiconductor such as group III-V or group II-VI. For example, the second conductive semiconductor layer 136 is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It may include. A second conductivity type dopant may be doped into the second conductivity type semiconductor layer 136. When the second conductivity-type semiconductor layer 136 is a p-type semiconductor layer, the second conductivity-type dopant is a p-type dopant, and may include Mg, Zn, Ca, Sr, and Ba.

The first conductivity type semiconductor layer 132 may be an n-type semiconductor layer, and the second conductivity type semiconductor layer 136 may be implemented as a p-type semiconductor layer. Alternatively, the first conductivity type semiconductor layer 132 may be implemented as a p-type semiconductor layer, and the second conductivity type semiconductor layer 136 may be implemented as an n-type semiconductor layer.

The light emitting structure 130 may be implemented as any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

Meanwhile, the first electrodes 192-1 and 192-2 are disposed under the first conductivity-type semiconductor layer 132 exposed by Mesa etching. The second electrode 194 is disposed under the second conductivity type semiconductor layer 136.

Each of the first electrodes 192-1, 192-2 and the second electrode 194 may reflect or transmit light emitted from the active layer 134 without absorbing it, and the first and second conductivity type semiconductor layers Under (132, 136) it can be formed of any material that can be grown with good quality. In addition, each of the first electrode 192-1, 192-2 and the second electrode 194 illustrated in FIGS. 3 and 4 has a single layer structure, but embodiments are not limited thereto. That is, each of the first electrodes 192-1 and 192-2 and the second electrode 194 may have a single-layer or multi-layer structure.

Each of the first electrodes 192-1, 192-2 and the second electrode 194 may be formed of, for example, metal, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and optional combinations thereof.

The first electrodes 192-1 and 192-2 may include an ohmic-contacting material to perform an ohmic role, so that a separate ohmic layer (not shown) may not need to be disposed, and a separate ohmic layer is the first electrode. It may be disposed between (192-1, 192-2) and the first conductivity type semiconductor layer 132.

In particular, the second electrode 194 may be a transparent conductive oxide (TCO). For example, the second electrode 194 includes the aforementioned metal material, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAO), indium gallium (IGZO) zinc oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/ IrOx/Au/ITO may be included, and the material is not limited thereto.

Further, the second electrode 194 may be formed of a reflective electrode material having ohmic characteristics. If the second electrode 194 serves as an ohmic, a separate ohmic layer (not shown) may not be formed.

The first and second metal pads 152 and 154 are disposed on the submount 140 to be electrically spaced apart. The sub-mount 140 may be made of a semiconductor substrate such as AlN, BN, silicon carbide (SiC), GaN, GaAs, Si, but is not limited thereto, and may be made of a semiconductor material having excellent thermal conductivity. In addition, a device for preventing electrostatic discharge (ESD) in the form of a zener diode may be included in the sub-mount 140.

If the sub-mount 140 is made of an electrically conductive material such as Si, a protective layer between the first and second metal pads 152 and 154 and the sub-mount 140, although not shown. It may be further deployed. Here, the protective layer may be made of an insulating material.

The first bump 162 is disposed between the first metal pad 152 and the first conductive semiconductor layer 132. The second bump 164 is disposed between the second metal pad 154 and the second conductivity-type semiconductor layer 136. At this time, the first bump 162 is connected to the first conductive type semiconductor layer 132 through the connecting metal layer 170 and the first electrode 192-2, and the second bump 164 is the second electrode 194 ) Is connected to the second conductivity type semiconductor layer 136.

According to an embodiment, as illustrated in FIG. 2, the second bump 164 may have a symmetrical shape in a plane, or may have an asymmetrical shape as illustrated.

The number of second bumps 164 in the light emitting device 100A illustrated in FIG. 2 described above is shown to be 12, and the number of first bumps 162 in the light emitting device 100A shown in FIGS. 3 and 4 Is shown as three, and the planar shape of the light emitting device 100A is shown as a rectangle, but the embodiment is not limited thereto. That is, the light emitting device 100A may have various polygonal planar shapes in addition to the rectangle, and the number of each of the first and second bumps 162 and 164 may be varied.

The first electrode 192-2 is electrically connected to the first metal pad 152 on the submount 140 through the first bump 162, and the second electrode 194 is the second bump 164 Through is electrically connected to the second metal pad 154 on the sub-mount 140.

Although not illustrated, a first upper bump metal layer (not shown) is further disposed between the first electrode 192-2 and the first bump 162, and the first metal pad 152 and the first bump 162 are disposed. ), a first lower bump metal layer (not shown) may be further disposed. Here, the first upper bump metal layer and the first lower bump metal layer serve to indicate where the first bump 162 will be located. Similarly, a second upper bump metal layer (not shown) is further disposed between the second electrode 194 and the second bump 164, and the second between the second metal pad 154 and the second bump 164 is further disposed. A lower bump metal layer (not shown) may be further disposed. Here, the second upper bump metal layer and the second lower bump metal layer serve to indicate a position where the second bump 164 is to be located.

2 to 5, an active area (AA) (or a light emitting area) corresponds to an area in which the second conductive type semiconductor layer 136 is disposed. The second electrode 194 and the active layer 134 are disposed in the active area AA. According to an embodiment, as illustrated in FIG. 5, the active area AA may have a symmetrical shape in a plane.

In addition, according to an embodiment, the first conductivity type semiconductor layer 132 may include first and second regions A1 and A2. Referring to FIG. 5, the first area A1 is an area having a shape surrounding all directions of the active area AA in a plane, and the second area A2 is surrounded by all directions by the active area AA in the plane It is an area with a jean shape.

As will be described later, as the active area AA is disposed closer to the edge E of the light emitting device 100A, the light emitting efficiency of the light emitting device 100A increases. Therefore, according to the embodiment, since the active region AA has a shape surrounding (or surrounding) all directions of the second region A2 of the first conductive semiconductor layer 132 in a plane, the active region ( AA) may be disposed close to the edge E of the light emitting device 100A. In addition, as described above, when the active region AA is disposed close to the edge E of the light-emitting element 100A, it may have a large forward current characteristic of 10 µs or more.

If the plane distance d1 between the edge E of the light-emitting element 100A and the active area AA is too small, the width of the first electrode 192-1 disposed in the first area A1 is reduced. As it becomes smaller, the forward turn-on voltage can rise. To prevent this, for example, the flat distance d1 may be 19 μm or more. In addition, when the plane distance d1 is too large, the distance between the active area AA and the edge E is too wide, so that the improvement in luminous efficiency may be insignificant. For example, the flat distance d1 may be 70 μm or less.

As described above, since the plane distance d1 is small in order to place the active region AA close to the edge E, the first bump A is formed in the first region A1 of the first conductive semiconductor layer 132. 162) may not be disposed, and the first bump 162 may be disposed only in the second area A2.

In this case, as illustrated in FIG. 4, the connecting metal layer 170 serves to electrically connect the first region A1 and the second region A2 of the first conductive semiconductor layer 132 to each other. To this end, the connecting metal layer 170 may be made of a material having electrical conductivity.

In addition, referring to FIG. 4, the insulating layers 180 and 182 are disposed between the second conductivity type semiconductor layer 136 and the connecting metal layer 170 to electrically separate them 136 and 170 from each other. Do it. In addition, the insulating layers 180 and 182 are disposed between the active layer 134 and the connecting metal layer 170, and serve to electrically separate these 134 and 170 from each other. In addition, the insulating layer 180 is disposed between the second electrode 194 and the connecting metal layer 170, and serves to electrically separate them 194 and 170 from each other.

To this end, the insulating layers 180 and 182 may be made of an electrically insulating material. For example, the insulating layers 180 and 182 are light-transmitting insulating materials, such as SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , or Al ₂ O ₃ May be implemented as a distributed Bragg Reflector (DBR) having insulating properties, and the embodiment is not limited thereto.

As described above, when the connecting metal layer 170 is disposed, the first bump 162 in the second area A2 is disposed between the connecting metal layer 170 and the first metal pad 152, and the second area The first electrode 192-2 disposed on the first conductivity type semiconductor layer 132 of (A2) is disposed between the first conductivity type semiconductor layer 132 and the connecting metal layer 170.

In the light emitting device 100A illustrated in FIGS. 3 and 4, the first electrodes 192-1 and 192-2 are the first region A1 and the second region A2 of the first conductivity-type semiconductor layer 132. ), but the embodiment is not limited thereto. That is, according to another embodiment, as illustrated in FIGS. 3 and 4, the first electrode may be disposed in at least one of the first region A1 or the second region A2. However, as described above, in order to lower the forward turn-on voltage of the light-emitting element 100A, as illustrated in FIGS. 3 and 4, the first electrodes 192-are formed in both the first and second regions A1 and A2. 1, 192-2) may be preferred.

In addition, referring to FIGS. 2 and 5, the active area AA may have a variable width along the length direction. For example, the active region AA may include third and fourth regions A3 and A4, as illustrated in FIG. 5. The third area A3 is defined as an area connected to the second bump 164, and the fourth area A4 is defined as an area between the third area A3 and not connected to the second bump 164 Area.

Since the second bump 164 is connected to the third area A3, heat discharge to the sub-mount 140 through the second bump 164 may be good. However, in the case of the fourth region A4, since the second bump 164 is not connected, heat dissipation characteristics may be poor. To improve this, the plane width L2 of the fourth region A4 may be smaller than the plane width L1 of the third region A3.

Hereinafter, a method of manufacturing the light emitting device 100A illustrated in FIGS. 2 to 5 will be described as follows with reference to the accompanying drawings.

6 to 12 are views for explaining a method of manufacturing the light emitting device 100A shown in FIGS. 2 to 4. Here, FIGS. 6, 7, 8A, 9A, 10A, 11, and 12 for describing a manufacturing method show process cross-sectional views, and FIGS. 5, 8B, 9B, and 10B show process plan views. .

Referring to FIG. 6, a buffer layer 112 is formed on the substrate 110.

The substrate 110 may be prepared from a light-transmitting material, for example, at least one of sapphire (Al ₂ 0 ₃ ), GaN, SiC, ZnO, GaP, InP, Ga ₂ 0 ₃ , GaAs, or Si Can prepare.

The buffer layer 112 may be formed of a translucent material. The buffer layer 112 may be formed of at least one material selected from the group consisting of Al, In, N, and Ga, but is not limited thereto. Further, the buffer layer 112 may be formed in the form of a single layer or a multi-layer structure, and in some cases, the formation of the buffer layer 112 may be omitted.

The light emitting structure 130 is formed on the buffer layer 112.

The light emitting structure 130 may be formed by sequentially stacking the first conductive semiconductor layer 132, the active layer 134, and the second conductive semiconductor layer 136 on the buffer layer 112.

The first conductivity-type semiconductor layer 132 is disposed between the buffer layer 112 and the active layer 134, and may be formed of a compound semiconductor such as a III-V group or a II-VI group doped with a first conductivity-type dopant. . When the first conductivity-type semiconductor layer 132 is an n-type semiconductor layer, the first conductivity-type dopant is an n-type dopant, and may include, but is not limited to, Si, Ge, Sn, Se, Te.

The first conductive semiconductor layer 132 may include a light-transmitting material, for example, Al _x In _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x+y≤ It may include a semiconductor material having a composition formula of 1). The first conductivity-type semiconductor layer 132 may include any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.

The active layer 134 is disposed between the first conductivity-type semiconductor layer 132 and the second conductivity-type semiconductor layer 136, and electrons (or holes) injected through the first conductivity-type semiconductor layer 132 are formed. A hole (or electrons) injected through the two-conductivity-type semiconductor layer 136 meets each other, and is a layer that emits light having energy determined by an energy band unique to the material constituting the active layer 134. The active layer 134 may have at least one of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. It can be formed as one.

The well layer/barrier layer of the active layer 134 may be formed of any one or more pair structures of InGaN/GaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/GaN, GaAs(InGaAs)/AlGaAs, GaP(InGaP)/AlGaP. However, it is not limited thereto. The well layer may be formed of a material having a band gap energy lower than that of the barrier layer.

A conductive clad layer (not shown) may be formed above or/or below the active layer 134. The conductive clad layer may be formed of a semiconductor having a band gap energy higher than that of the barrier layer of the active layer 134. For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, or superlattice structures. In addition, the conductive clad layer may be doped with n-type or p-type. For example, the active layer 134 may emit light in an ultraviolet wavelength band of 100 nm to 400 nm, for example, 100 nm to 280 nm.

The second conductivity-type semiconductor layer 136 is disposed on the active layer 134 and may be formed of a semiconductor compound. It may be implemented with a compound semiconductor such as group III-V or group II-VI. For example, the second conductive semiconductor layer 136 is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It may include. A second conductivity type dopant may be doped into the second conductivity type semiconductor layer 136. When the second conductivity-type semiconductor layer 136 is a p-type semiconductor layer, the second conductivity-type dopant is a p-type dopant, and may include Mg, Zn, Ca, Sr, and Ba.

Thereafter, referring to FIGS. 5 and 7, the second conductive semiconductor layer 136 of the light emitting structure 130, the active layer 134, and a portion of the first conductive semiconductor layer 132 are mesa etched (Mesa) etching) to expose a portion of the first conductivity type semiconductor layer 132. The active region AA and the first and second regions A1 and A2 of the first conductivity-type semiconductor layer 132 are defined by the mesa etching.

Thereafter, referring to FIGS. 8A and 8B, the first electrode 192-1 is formed on the first region A1 of the first conductivity type semiconductor layer 132 and the second region A2 is formed. The first electrode 192-2 is formed on the upper portion. At this time, in the first region A1, the first electrode 192-1 is spaced apart by the first width W1 from the sidewall of the second conductivity type semiconductor layer 136 in the active region AA and the edge E ) May be formed to be spaced apart by a second width W2. Also, in the second region A2, the first electrode 192-2 may be formed by being spaced apart by a third width W3 from the sidewall of the second conductivity type semiconductor layer 136 in the active region AA. have.

The first electrodes 192-1 and 192-2 can reflect or transmit light emitted from the active layer 134 without absorbing it, and can be grown with good quality on the first conductive semiconductor layer 132. It can be formed of materials. Further, the first electrodes 192-1 and 192-2 may be formed in a single layer or multi-layer structure.

The first electrodes 192-1 and 192-2 may be formed of, for example, metal, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and their It can be formed by an optional combination. When the first electrodes 192-1 and 192-2 are formed of a material that is in ohmic contact with the first conductivity type semiconductor layer 132, a separate ohmic layer (not shown) may not need to be disposed, but separate The ohmic layer may be disposed between the first electrodes 192-1 and 192-2 and the first conductivity-type semiconductor layer 132.

Subsequently, referring to FIGS. 9A and 9B, the second electrode 194 is formed on the second conductive semiconductor layer 136. At this time, the second electrode 194 is formed spaced apart by a fourth width W4 from the boundary between the first area A1 and the active area AA, and the boundary between the second area A1 and the active area AA It may be formed spaced apart from the fifth width (W5).

The second electrode 194 may reflect or transmit light emitted from the active layer 134 without absorbing it, and may be formed of any material that can be grown with good quality on the second conductive semiconductor layer 136. . Also, the second electrode 194 may be formed in a single layer or multilayer structure.

The second electrode 194 may be formed of a metal, for example, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and optional combinations thereof It may be. In particular, the second electrode 194 may be a transparent conductive oxide film (TCO). For example, the second electrode 194 includes the aforementioned metal material and ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO, IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni /IrOx/Au/ITO, and embodiments are not limited to these materials.

Further, the second electrode 194 may be formed of a reflective electrode material having ohmic characteristics.

Thereafter, referring to FIGS. 10A and 10B, insulating layers 180 and 182 are formed. Here, FIGS. 10A and 10B correspond to process sectional views of the semiconductor device 100A illustrated in FIG. 3. 3, 10A and 10B, the insulating layers 180 and 182 are exposed without being covered by the first partial surface of the first electrode 192-1 and the first electrode 192-1. The upper part 132-1 and the side part 132-2 of the 1 conductivity type semiconductor layer 132, the side part 134-1 of the active layer 134, and the side part 136 of the second conductivity type semiconductor layer 136 -1), formed on the upper portion 136-2 of the second conductivity-type semiconductor layer 136 exposed without being covered by the second electrode 194 and the upper portion of the second electrode 194.

In addition, as illustrated in FIG. 4, the insulating layers 180 and 182 are active regions AA in which the connecting metal layer 170 crosses from the first electrode 192-1 to the other first electrode 192-2. It may be formed to cover the entire.

The insulating layers 180 and 182 may be formed of an electric insulating material. For example, the insulating layers 180 and 182 are light-transmitting insulating materials, such as SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , or Al ₂ O ₃ To be formed into May be implemented as a distributed Bragg Reflector (DBR) having electrical insulation, and the embodiment is not limited thereto.

Thereafter, as illustrated in FIG. 3, the upper and side portions of the first electrode 192-1 in the first region A1 and the upper portion of the first electrode 192-2 in the second region A2 are connected. The metal layer 170 is formed. At this time, as illustrated in FIG. 4, the connection metal layer 170 is formed to electrically connect the first electrodes 192-1 and 192-2 of the first and second regions A1 and A2 to each other. As described above, when the connecting metal layer 170 is formed, the light emitting device 100A has a planar shape as illustrated in FIG. 2. The connecting metal layer 170 may be made of a material having electrical conductivity.

On the other hand, referring to Figure 11, the first and second metal pads 152 and 154 on the sub-mount 140 in a separate process while the process shown in Figures 6, 5, 7 to 10B is in progress Can form. The sub-mount 140 may be made of a semiconductor substrate such as AlN, BN, silicon carbide (SiC), GaN, GaAs, Si, but is not limited thereto, and may be made of a semiconductor material having excellent thermal conductivity.

If the sub-mount 140 is made of Si, a protective layer (not shown) may be formed on the top of the sub-mount 140 before forming the first and second metal pads 152 and 154. This is because the first and second metal pads 152 and 154 are electrically insulated on the conductive silicon sub-mount 140. The protective layer can be formed of an insulating material.

Thereafter, referring to FIG. 12, first and second bumps 162 and 164 are formed on the first and second metal pads 152 and 154, respectively. Each of the first and second bumps 162 and 164 may be a stud bump, but embodiments are not limited thereto.

Thereafter, the substrate 110 is rotated to be disposed toward the top side, and then combined with the result shown in FIG. 12. At this time, the first electrode 192-2 and the first metal pad 152 are coupled by the first bump 162, and the second electrode 194 and the second metal pad by the second bump 164 ( 154) are combined. The first electrode 192-1 of the first region A1 is connected to the first bump 162 via the first electrode 192-2 of the second region A2 connected through the connecting metal layer 170. do.

Hereinafter, a light emitting device 100B according to another embodiment will be described with reference to the accompanying drawings.

13 is a plan view of a light emitting device 100B according to another embodiment, and FIG. 14 is a plan view of only the first and second conductivity type semiconductor layers 132 and 136 in the light emitting device 100B illustrated in FIG. 13. .

In the case of the light emitting device 100A illustrated in FIG. 5, the planar shape of the active area AA has a variable width along the longitudinal direction, whereas in the case of the light emitting device 100B illustrated in FIG. 14, the active area AA The planar shape has a constant width along the length direction of the active area AA.

In the case of a cross-sectional view taken along the line I-I' and II-II' of FIG. 13, the first region A1 in the first conductivity type semiconductor layer 132 is as illustrated in FIGS. 3 and 4. However, in the light emitting device 100A illustrated in FIGS. 3 and 4, the second area A2 is one, while the light emitting device 100B shown in FIGS. 13 and 14 has two second areas A21 and A22. ). That is, the two second regions A21 and A22 have a shape surrounded (or surrounded) in all directions by the active region AA in a plane, and are the regions in which the first bumps 162 are disposed. Accordingly, instead of one second region A2 shown in FIGS. 3 and 4, two second regions A21 and A22 are disposed, and an active region (between the two second regions A21 and A22) When AA) is disposed, the cross-sectional views shown in FIGS. 3 and 4 correspond to the cross-sectional views of the light emitting device 100B shown in FIGS. 11 and 12. Therefore, with these differences, the cross-sectional views shown in FIGS. 3 and 4 are applied to the description of the light emitting device 100B shown in FIGS. 13 and 14.

In addition, except for the above-described difference, since the light emitting device 100B illustrated in FIGS. 13 and 14 is the same as the light emitting device 100A illustrated in FIGS. 2 and 5, descriptions of overlapping parts are omitted.

Hereinafter, a method of manufacturing the light emitting device 100B illustrated in FIG. 13 will be described in the following with reference to the accompanying drawings.

15A to 15C are process plan views for explaining a method of manufacturing the light emitting device 100B shown in FIG. 13.

6, the buffer layer 112 and the light emitting structure 130 are formed on the substrate 110.

Thereafter, as shown in FIG. 14, the first conductivity type semiconductor layer is mesa etched by the second conductivity type semiconductor layer 136, the active layer 134, and the first conductivity type semiconductor layer 132 in the light emitting structure 130. (132) is exposed. The first region A1 and the second regions A21 and A22 of the first conductivity-type semiconductor layer 132 are defined by the mesa etching.

Thereafter, referring to FIG. 15A, the first electrode 192-1 is formed in the first region A1 of the first conductivity type semiconductor layer 132 exposed by the mesa etching, and the second regions A21 and A22 are formed. ) To form the first electrodes 192-21 and 192-22, respectively.

Thereafter, referring to FIG. 15B, a second electrode 194 is formed on the second conductive semiconductor layer 136.

Subsequently, referring to FIG. 15C, an upper partial surface of the first electrode 192-1 and upper and side portions of the first conductive semiconductor layer 132 exposed without being covered by the first electrode 192-1 Wow, the side of the active layer 134, the side of the second conductivity type semiconductor layer 136, the top and second electrodes of the second conductivity type semiconductor layer 136 exposed without being covered by the second electrode 194 An insulating layer 180 is formed on a portion of the upper portion of 194. In addition, the insulating layer 180, so that the connecting metal layer 170 covers the entire active area AA transverse from the first electrode 192-1 to the other two first electrodes 192-21, 192-22. 182) may be formed.

The light emitting devices 100A and 100B of the above-described embodiment have a flip-chip type structure, but the embodiment is not limited thereto. According to another embodiment, the description of the light emitting devices 100A and 100B described above may be applied to the horizontal light emitting device.

16A to 16D show light emission images of the conventional light emitting device shown in FIG. 1.

As shown in Fig. 16(a) to Fig. 16(d), the existing light emitting device is driven with a high current.

17A and 17B show the conventional light emitting device shown in FIG. 1 having different distances between the active area 20 and the edge E of the light emitting device.

The distance between the active area 20 and the edge E in the conventional light emitting device shown in FIG. 17A is shorter than the distance between the active area 20 and the edge E in the conventional light emitting device shown in FIG. 17B. Luminous fluxes of the conventional light emitting devices shown in FIGS. 17A and 17B are shown in Table 1 below.

Luminous flux Light-Emitting Element of Fig. 17A Light-emitting element of Figure 17b Po1 1.46 1.29 Po2 4.16 3.72 Po3 6.49 5.91

In Table 1, Po1, Po2, and Po3 indicate luminous flux at currents of 20 ㎃, 60 ㎃, and 100 각각, respectively. Referring to Table 1, it can be seen that the light flux of the light emitting device shown in FIG. 17A is greater than the light flux of the light emitting device shown in FIG. 17B.

Also, referring to Table 1 and FIG. 16(a) to FIG. 16(d), it can be seen that the difference in the above-described light flux becomes larger as the current increases.

As a result, as described above, it can be seen that the light emitting efficiency of the light emitting device increases as the active area AA is disposed closer to the edge of the light emitting device.

In the case of the light emitting device illustrated in FIG. 1, due to the presence of the n-type bump 40, there is a limitation in that the active area AA and the 20 are disposed close to the edge E. However, according to the embodiment, since the active area AA has a shape that surrounds all directions of the second area A2 of the first conductive semiconductor layer 132 in a plane, the active area AA has a light emitting element ( It may be disposed close to the edge (E) of 100A). Accordingly, the light emitting devices 100A and 100B according to the above-described embodiment may have excellent light emission efficiency compared to the conventional light emitting devices illustrated in FIG. 1.

In addition, as described above, when the active area AA is disposed close to the edges E of the light emitting elements 100A and 100B, it may have a large forward current characteristic of 10 µs or more.

18 is a cross-sectional view of a light emitting device package 200 according to an embodiment.

The light emitting device package 200 according to the embodiment includes a light emitting device 100, a header 210, an adhesive portion 220, first and second lead wires 232 and 234, and first and second wires ( 242, 244, a side wall portion 250 and a molding member 260. The light emitting device 100 is a light emitting device 100A illustrated in FIGS. 2 and 3, and a detailed description thereof is omitted using the same reference numerals. Of course, other light emitting devices 100B may be implemented as the light emitting device package 200 as illustrated in FIG. 18, in addition to the light emitting device 100A illustrated in FIG. 3.

The sub mount 140 is disposed on the header 210. For example, the sub-mount 140 may be connected to the header 210 by the adhesive portion 220. The adhesive portion 220 may be in the form of solder or paste.

The side wall part 250 is disposed on the header 210 to form a cavity. The light emitting device 100 may be formed to be disposed in the cavity above the header 210.

The first and second metal pads 152 and 154 of the light emitting device 100 are electrically connected to the first and second wires 242 and 244, respectively. The first and second lead wires 232 and 234 are electrically connected to the first and second metal pads 152 and 154 through the first and second wires 242 and 244, respectively. Accordingly, power is provided to the light emitting device 100 through a pair of lead wires 232 and 234 that are electrically separated from each other.

The molding member 260 may be filled in the cavity of the package 200 formed by the side wall portion 250 to surround and protect the light emitting device 100. In addition, the molding member 260 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

In the light emitting device package according to another embodiment, a plurality of light emitting device packages are arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, etc., which are optical members may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit or may function as a lighting unit, for example, the lighting system may include a backlight unit, a lighting unit, an indicator device, a lamp, and a street light.

19 illustrates a display device 800 including a light emitting device package according to an embodiment.

Referring to FIG. 19, the display device 800 includes a bottom cover 810, a reflector 820 disposed on the bottom cover 810, light emitting modules 830 and 835 that emit light, and a reflector 820. ) And a light guide plate 840 that guides light emitted from the light emitting modules 830 and 835 toward the front of the display device and prism sheets 850 and 860 disposed in front of the light guide plate 840. An optical sheet, a display panel 870 disposed in front of the optical sheet, an image signal output circuit 872 connected to the display panel 870 and supplying an image signal to the display panel 870, and a display panel 870 It may include a color filter 880 disposed in front of. Here, the bottom cover 810, the reflector 820, the light emitting modules 830 and 835, the light guide plate 840 and the optical sheet may form a backlight unit.

The light emitting module may include light emitting device packages 835 mounted on the substrate 830. Here, the substrate 830 may be a PCB or the like. The light emitting device package 835 may be the embodiment 200 illustrated in FIG. 18.

The bottom cover 810 may accommodate components in the display device 800. In addition, the reflective plate 820 may be provided as a separate component, as shown in the figure, or may be provided in a form coated with a highly reflective material on the back of the light guide plate 840 or the front of the bottom cover 810. .

Here, the reflector 820 may use a material having a high reflectance and an ultra-thin type, and polyethylene terephthalate (PET) may be used.

In addition, the light guide plate 840 may be formed of polymethyl methacrylate (PMMA: PolyMethylMethAcrylate), polycarbonate (PC: PolyCarbonate), or polyethylene (PE: PolyEthylene).

In addition, the first prism sheet 850 may be formed of a polymer material having light transmission and elasticity on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, as shown in the figure, the floor and the valley may be repeatedly provided in a stripe type.

In addition, in the second prism sheet 860, the direction of the floors and valleys on one side of the support film may be perpendicular to the direction of the floors and valleys on one side of the support film in the first prism sheet 850. This is to evenly distribute light transmitted from the light emitting module and the reflective sheet to the front surface of the display panel 870.

In addition, although not illustrated, a diffusion sheet may be disposed between the light guide plate 840 and the first prism sheet 850. The diffusion sheet may be made of a polyester and polycarbonate-based material, and may maximize the light projection angle through refraction and scattering of light incident from the backlight unit. In addition, the diffusion sheet is formed on a support layer including a light diffusion agent, and a first layer and a second layer that are formed on a light exit surface (first prism sheet direction) and a light incident surface (reflection sheet direction) and do not contain a light diffusion agent. It may include.

In an embodiment, the diffusion sheet, the first prism sheet 850, and the second prism sheet 860 form an optical sheet, the optical sheet is made of a different combination, for example, a micro lens array or a diffusion sheet and a micro lens array Or a combination of one prism sheet and a micro lens array.

A liquid crystal display may be disposed on the display panel 870, and other types of display devices requiring a light source may be provided in addition to the liquid crystal display panel.

20 illustrates a head lamp 900 including a light emitting device package according to an embodiment.

Referring to FIG. 20, the head lamp 900 includes a light emitting module 901, a reflector 902, a shade 903, and a lens 904.

The light emitting module 901 may include a plurality of light emitting device packages (not shown) disposed on a substrate (not shown). In this case, the light emitting device package may be the embodiment 200 illustrated in FIG. 18.

The reflector 902 reflects the light 911 emitted from the light emitting module 901 in a predetermined direction, for example, the front 912.

The shade 903 is disposed between the reflector 902 and the lens 904, and is a member that blocks or reflects a portion of light reflected by the reflector 902 to the lens 904 to form a light distribution pattern desired by the designer As, the height of one side portion 903-1 and the other side portion 903-2 of the shade 903 may be different from each other.

The light emitted from the light emitting module 901 may be reflected by the reflector 902 and the shade 903 and then pass through the lens 904 to face the vehicle body front. The lens 904 may refract light reflected by the reflector 902 in the forward direction.

21 illustrates a lighting device 1000 including a light emitting device or a light emitting device package according to an embodiment.

Referring to FIG. 21, the lighting device 1000 may include a cover 1100, a light source module 1200, a heat radiator 1400, a power supply unit 1600, an inner case 1700 and a socket 1800. have. In addition, the lighting device 1000 according to the embodiment may further include any one or more of the member 1300 and the holder 1500.

The light source module 1200 may include the light emitting device 100A illustrated in FIGS. 2 to 5, the light emitting device 100B illustrated in FIGS. 13 and 14, or the light emitting device package 200 illustrated in FIG. 18. have.

The cover 1100 may be in the shape of a bulb or a hemisphere, the hollow may be hollow, and a portion may be opened. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 may be combined with the radiator 1400. The cover 1100 may have a coupling portion that engages the heat radiator 1400.

A milky white coating may be coated on the inner surface of the cover 1100. The milky white paint may include a diffusion material that diffuses light. The surface roughness of the inner surface of the cover 1100 may be greater than the surface roughness of the outer surface of the cover 1100. This is for light from the light source module 1200 to be sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 1100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate has excellent light resistance, heat resistance, and strength. The cover 1100 may be transparent so that the light source module 1200 is visible from the outside, but is not limited thereto and may be opaque. The cover 1100 may be formed through blow molding.

The light source module 1200 may be disposed on one surface of the heat radiator 1400, and heat generated from the light source module 1200 may be conducted to the heat radiator 1400. The light source module 1200 may include a light source unit 1210, a connection plate 1230, and a connector 1250.

The member 1300 may be disposed on the upper surface of the radiator 1400, and has a plurality of light source units 1210 and a guide groove 1310 into which the connector 1250 is inserted. The guide groove 1310 may correspond to or be aligned with the substrate and connector 1250 of the light source unit 1210.

The surface of the member 1300 may be coated or coated with a light reflective material.

For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 may reflect light reflected on the inner surface of the cover 1100 and return toward the light source module 1200 again in the direction of the cover 1100. Therefore, it is possible to improve the light efficiency of the lighting device according to the embodiment.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Accordingly, electrical contact may be made between the radiator 1400 and the connection plate 1230. The member 1300 may be formed of an insulating material to block electrical shorts between the connection plate 1230 and the radiator 1400. The heat radiator 1400 may radiate heat by receiving heat from the light source module 1200 and heat from the power supply unit 1600.

The holder 1500 closes the storage groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 accommodated in the insulating portion 1710 of the inner case 1700 may be sealed. The holder 1500 may have a guide protrusion 1510, and the guide protrusion 1510 may have a hole through which the protrusion 1610 of the power supply unit 1600 passes.

The power supply unit 1600 processes or converts an electrical signal provided from the outside and provides it to the light source module 1200. The power supply unit 1600 may be accommodated in the receiving groove 1719 of the inner case 1700, and may be sealed inside the inner case 1700 by the holder 1500. The power supply unit 1600 may include a protrusion 1610, a guide unit 1630, a base 1650 and an extension unit 1670.

The guide portion 1630 may have a shape protruding from the side of the base 1650 to the outside. The guide portion 1630 may be inserted into the holder 1500. A plurality of parts may be disposed on one surface of the base 1650. For example, a plurality of components include, for example, a DC converter that converts AC power provided from an external power source into DC power, a driving chip that controls the driving of the light source module 1200, and ESD (ElectroStatic) to protect the light source module 1200. discharge) protection element and the like, but is not limited thereto.

The extension 1670 may have a shape protruding from the other side of the base 1650 to the outside. The extension part 1670 may be inserted inside the connection part 1750 of the inner case 1700, and may receive an electrical signal from the outside. For example, the extension 1670 may be the same or smaller in width than the connection 1750 of the inner case 1700. Each end of the "+ wire" and "- wire" may be electrically connected to the extension 1670, and the other end of the "+ wire" and "- wire" may be electrically connected to the socket 1800. .

The inner case 1700 may include a molding unit together with a power supply unit 1600 therein. The molding part is a part in which the molding liquid is hardened, so that the power supply unit 1600 can be fixed inside the inner case 1700.

The embodiments have been mainly described above, but this is merely an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains have not been exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And differences related to these modifications and applications should be construed as being included in the scope of the invention defined in the appended claims.

100, 100A, 100B: light-emitting element 110: substrate, light-transmitting substrate
112: buffer layer 130: light emitting structure
131: light emitting member
132: first conductive semiconductor layer 134: active layer
136: second conductive semiconductor layer 140: sub-mount
152: first metal pad 154: second metal pad
162: first bump 164: second bump
170: connecting metal layer 180, 182: insulating layer
192-1, 192-2, 192-21, 192-22: first electrode
194: second electrode E: edge of the light emitting element
A1: first region of the first conductivity type semiconductor layer
A2, A21, A22: second region of the first conductivity type semiconductor layer
AA: active region 192-21: first part of the first electrode
192-22: Part 2 of the first electrode 192-1: Part 3 of the first electrode
OP1, OP2, OP3: a plurality of openings PRO1 to PRO4: a plurality of protrusions
SIDE1: First side SIDE2: Second side

Claims (13)

A light-transmissive substrate;
A light emitting structure disposed on the light-transmitting substrate and including a first conductive type semiconductor layer and a light emitting member disposed on the first conductive type semiconductor layer;
A first electrode disposed on the first conductivity type semiconductor layer and contacting the first conductivity type semiconductor layer;
A second electrode disposed on the light emitting member and in contact with the light emitting member,
The light emitting member includes an active layer disposed on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the active layer,
The first electrode includes a first part, a second part, and a third part spaced apart from each other,
The light emitting member is disposed in a closed loop along the periphery of the first part and the second part,
The third part is a light emitting device having a planar shape disposed in a closed loop along the outermost periphery of the light emitting member. According to claim 1,
The first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer each include aluminum,
Among the wavelengths of light emitted by the active layer, the light having the largest relative intensity has a wavelength between 100 nm and 400 nm. According to claim 1,
A light emitting device including an insulating layer extending from an upper surface of the first electrode to an upper surface of the second electrode disposed on the upper surface of the light emitting member. According to claim 3,
A first bump electrically connected to the first electrode;
A light emitting device including a second bump electrically connected to the second electrode. According to claim 4,
The insulating layer includes a plurality of openings,
A portion of the first electrode and a portion of the second electrode are respectively disposed in the plurality of openings,
The first bump and the second bump are light emitting devices that are electrically connected to a portion of the first electrode and a portion of the second electrode, respectively, disposed in the plurality of openings. According to claim 1,
The translucent substrate includes a first side and a second side facing each other in a first direction,
The light emitting member includes a plurality of protrusions protruding toward the first side in the first direction. A light-emitting device package comprising the light-emitting device according to claim 1 or 4. The light emitting device of claim 7, wherein the light emitting device includes a first surface that is a bottom surface of the translucent substrate, and a second surface that is opposite to the first surface in a thickness direction of the translucent substrate,
A light emitting device package including an adhesive portion having a solder form and connected to the second surface of the light emitting device. delete delete delete delete delete

Images