KR20120129449A - Ultraviolet light emitting device - Google Patents

Ultraviolet light emitting device Download PDF

Info

Publication number
KR20120129449A
KR20120129449A KR1020110047706A KR20110047706A KR20120129449A KR 20120129449 A KR20120129449 A KR 20120129449A KR 1020110047706 A KR1020110047706 A KR 1020110047706A KR 20110047706 A KR20110047706 A KR 20110047706A KR 20120129449 A KR20120129449 A KR 20120129449A
Authority
KR
South Korea
Prior art keywords
layer
light emitting
electrode
semiconductor layer
conductive semiconductor
Prior art date
Application number
KR1020110047706A
Other languages
Korean (ko)
Inventor
송현돈
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020110047706A priority Critical patent/KR20120129449A/en
Publication of KR20120129449A publication Critical patent/KR20120129449A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

According to an embodiment, the ultraviolet light emitting device includes a first conductive semiconductor layer, an active layer that generates ultraviolet light on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and an ultraviolet ray of the active layer. At least a reflective layer formed on the side of the active layer.

Description

Ultraviolet light emitting device

The embodiment relates to an ultraviolet light emitting device.

Light emitting diodes (LEDs) are a type of semiconductor device that converts electrical energy into light. Light emitting diodes have the advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Accordingly, much research has been conducted to replace an existing light source with a light emitting diode, and a light emitting diode has been increasingly used as a light source for various lamps used in indoor / outdoor, a liquid crystal display, a display board, and a streetlight.

The embodiment provides an ultraviolet light emitting structure having a new structure.

The embodiment provides an ultraviolet light emitting structure with improved light extraction efficiency.

According to the embodiment, the ultraviolet light emitting device, the first conductivity type semiconductor layer; An active layer generating ultraviolet rays on the first conductivity type semiconductor layer; A second conductivity type semiconductor layer on the active layer; And a reflective layer formed on at least a side of the active layer to reflect ultraviolet rays of the active layer.

According to the embodiment, the ultraviolet light emitting device, the electrode; A light emitting structure including at least an active layer on the electrode; And a reflective layer formed on at least a side of the active layer to reflect ultraviolet rays of the active layer.

According to the embodiment, at least the reflective layer is formed on the side of the active layer to occupy most of the ultraviolet rays and reflect the TM polarized light which proceeds laterally, thereby significantly improving the light extraction efficiency.

1 is a cross-sectional view showing an ultraviolet light emitting device according to the embodiment.
2 is a graph illustrating TE polarization and TM polarization according to wavelengths.
3 is a diagram illustrating the advancing directions of TE polarized light and TM polarized light.
4 to 7 are views illustrating a manufacturing process of the ultraviolet light emitting device according to the embodiment.
8 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.

In the description of the embodiment according to the invention, in the case where it is described as being formed on the "top" or "bottom" of each component, the top (bottom) or the bottom (bottom) is the two components are mutually It includes both direct contact or one or more other components disposed between and formed between the two components. In addition, when expressed as "up (up) or down (down)" may include the meaning of the down direction as well as the up direction based on one component.

1 is a cross-sectional view showing an ultraviolet light emitting device according to the embodiment.

Referring to FIG. 1, a light emitting device 1 according to an exemplary embodiment may include first and second electrodes 10 and 80, an ohmic contact layer 20, a light emitting structure 30, an insulating layer 65, and a reflective layer 70. ) May be included.

The first electrode 10 may have a function as an electrode as well as support a plurality of layers formed thereon. In other words, the first electrode 10 may include a support member having conductivity. The first electrode 10 may supply power to the light emitting structure 30 together with the second electrode 80.

UV light according to the embodiment may have a wavelength in the range of 280nm to 360nm.

For example, the first electrode 10 may include titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), and copper (Cu). ), Molybdenum (Mo), copper-tungsten (Cu-W), and a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, SiGe, etc.).

The first electrode 10 may be plated and / or deposited under the light emitting structure 30, or may be attached in the form of a sheet, but is not limited thereto.

The second electrode 10 may be formed in contact with the ohmic contact layer 20, the insulating layer 65, and the reflective layer 70.

The light emitting structure 30 may be formed on the first electrode 10.

Although not shown, the side surface of the light emitting structure 30 may be formed vertically or inclined by an isolation etching that divides a plurality of chips into individual chip units.

The light emitting structure 30 may include a compound semiconductor material of a plurality of Group 3 to Group 5 elements.

The light emitting structure 30 may include a first conductive semiconductor layer 40, an active layer 50 on the first conductive semiconductor layer 40, and a second conductive semiconductor layer 60 on the active layer 50. It may include.

The first conductivity type semiconductor layer 40 may be formed on the ohmic contact layer 20. The first conductive semiconductor layer 40 may be a p-type semiconductor layer including a p-type dopant. The p-type semiconductor layer may include one selected from the group consisting of compound semiconductor materials of Group 3 to 5 elements, such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. Can be. The p-type dopant may be Mg, Zn, Ga, Sr, Ba, or the like. The first conductivity type semiconductor layer 40 may be formed as a single layer or a multilayer, but is not limited thereto.

The first conductive semiconductor layer 40 serves to supply a plurality of carriers to the active layer 50.

The active layer 50 is formed on the first conductivity type semiconductor layer 40 and may include any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure. It does not limit about.

The active layer 50 may be formed in a cycle of a well layer and a barrier layer using a compound semiconductor material of Group 3 to Group 5 elements. Compound semiconductor materials for use as the active layer 50 may be GaN, AlGaN InAlGaN or. Accordingly, the active layer 50 may include, for example, a period of the AlGaN well layer / AlGaN barrier layer, a period of the InAlGaN well layer / GaN barrier layer, a period of the InAlGaN well layer / InGaN barrier layer, and the like. I never do that.

The active layer 50 includes a plurality of carriers supplied from the first conductive semiconductor layer 40, for example, holes and a plurality of carriers supplied from the second conductive semiconductor layer 60, for example, electrons. ) May be recombined to generate light having a wavelength corresponding to the band gap determined by the semiconductor material of the active layer 50.

The second conductivity type semiconductor layer 60 may be formed on the active layer 50. The second conductivity-type semiconductor layer 60 may be an n-type semiconductor layer including an n-type dopant. The second conductive semiconductor layer 60 is formed of a compound semiconductor material of Group 3 to Group 5 elements, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. It may include one selected from the group. The n-type dopant may be Si, Ge, Sn, Se, Te, or the like. The second conductive semiconductor layer 60 may be formed as a single layer or a multilayer, but is not limited thereto.

For example, in the ultraviolet light emitting device 1 according to the embodiment, the light emitting structure 30 may include a first conductive semiconductor layer 40 including AlGaN including a p-type dopant, an active layer 50 including AlGaN, and an n-type dopant. It may include a second conductivity-type semiconductor layer 60 including AlGaN containing. In this case, the composition ratios of Al included in the first conductive semiconductor layer 40, the active layer 50, and the second conductive semiconductor layer 60 may be different from each other.

Meanwhile, an ohmic contact layer 20 may be formed under the first conductivity type semiconductor layer 40 of the light emitting structure 30. The ohmic contact layer 20 may be in ohmic contact with the first conductivity-type semiconductor layer 40 to smoothly supply power to the light emitting structure 30.

Specifically, the ohmic contact layer 20 may selectively use a transparent conductive material and a metal, and may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and indium aluminum (AZO). zinc oxide), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni , Ag, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, which may be implemented in a single layer or multiple layers.

According to the ultraviolet light emitting structure according to the embodiment, Al may be included in the first and second conductivity-type semiconductor layers 40 and 60 as well as the active layer 50 in the light emitting structure 30 in different composition ratios.

Al generally serves to increase sheet resistance. Therefore, in the first conductive semiconductor layer 40 in contact with the ohmic contact layer 20, the surface resistance may be increased by about 100 times when Al is included as compared with the case where Al is not included.

Therefore, in order to lower the surface resistance of the first conductivity-type semiconductor layer 40 in contact with the ohmic contact layer 20, the thickness of the ohmic contact layer 20 is increased or the conductivity of the material of the ohmic contact layer 20 itself is improved. Should be. Since there is a limit to improving the conductivity of the material of the ohmic contact layer 20, the thickness of the ohmic contact layer 20 may be increased to lower the surface resistance of the first conductive semiconductor layer 40.

However, when the thickness of the ohmic contact layer 20 is increased in this manner, since the light generated in the active layer 50 is mostly absorbed by the ohmic contact layer 20, the reflective layer 70 is disposed below the ohmic contact layer 20. Even if formed, the rate at which light is reflected by the reflective layer can be considerably lowered.

In the ultraviolet light emitting device 1 as in the embodiment, there is little practical benefit in forming a reflective layer under the ohmic contact layer 20.

Nevertheless, when the conductivity of the material itself of the ohmic contact layer 20 can be dramatically improved to minimize the thickness of the ohmic contact layer 20, a reflective layer may be disposed below the ohmic contact layer 20. . As such, since the light of the active layer 50 may be reflected forward by the reflective layer disposed under the ohmic contact layer 20, the light extraction efficiency may be improved.

A current blocking layer (CBL) may be formed in the ohmic contact layer 20 to contact the first conductive semiconductor layer 40. The current blocking layer may be formed to overlap at least a portion of the second electrode 80 in a vertical direction. The current blocking layer may serve to block a current supplied to the first conductive semiconductor layer 40 through the ohmic contact layer 20. Therefore, the supply of current to the first conductive semiconductor layer 40 can be interrupted in and around the current blocking layer. That is, the current blocking layer maximally suppresses the current flowing along the shortest path between the first electrode 10 and the second electrode 80, while the current is the ohmic other than the current blocking layer. Since the current flows to the area between the contact layer 20 and the first conductivity-type semiconductor layer 40 and the current flows in a balanced manner in the entire area of the first conductivity-type semiconductor layer 40, the luminous efficiency is remarkably improved. Can be.

The current blocking layer may be formed using a material having lower electrical conductivity than the ohmic contact layer 20, having electrical insulation, or forming a schottky contact with the first conductive semiconductor layer 40. Can be. The current blocking layer is, for example, ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3, TiO x It may include at least one selected from the group consisting of, Ti, Al and Cr.

The current blocking layer may be formed between the ohmic contact layer 20 and the first conductive semiconductor layer 40 or may be formed under the ohmic contact layer 20, but is not limited thereto. .

In addition, the current blocking layer is formed in a groove formed in the ohmic contact layer 20, protrudes on the ohmic contact layer 20, or penetrates the top and bottom surfaces of the ohmic contact layer 20. It is formed inside the hole, but is not limited thereto.

An adhesive layer (not shown) may be formed under the ohmic contact layer 20. The adhesive layer may be formed under the light emitting structure 30 as a bonding layer. The adhesive layer may serve as a medium for strengthening the adhesive force between the first conductivity-type semiconductor layer 40 and the first electrode 10 of the light emitting structure 30. The adhesive layer may include a barrier metal or a bonding metal. The adhesive layer may include, for example, at least one selected from the group consisting of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, and Ta.

The first electrode 10 may be adhesively formed on the adhesive layer formed under the light emitting structure 30.

The second electrode 80 may be formed on the upper surface of the light emitting structure 30.

The second electrode 80 may have a locally formed pattern shape without covering the entire area of the light emitting structure 30. Although not shown, the second electrode 80 branches to at least one side of the electrode pad region to which the wire is bonded and the electrode pad region to supply current to the entire region of the light emitting structure 30 evenly. It may include a current spreading pattern that serves to spread (spreading).

The electrode pad region may have a square, circular, elliptical, or polygonal shape when viewed from above, but is not limited thereto.

The second electrode 80 may be formed in a single layer or a multilayer structure including at least one selected from the group consisting of Au, Ti, Ni, Cu, Al, Cr, Ag, and Pt.

An example of the multilayer structure of the second electrode 80 may include an ohmic layer including a metal such as Cr for forming ohmic contact with the light emitting structure 30 in a first layer, which is a lowermost layer, and a second layer on the first layer. Reflective layer 70 comprising a metal such as Al and Ag having a high reflection property in the layer, and a first diffusion barrier layer comprising a metal to prevent interlayer diffusion such as Ni in the third layer on the second layer. A conductive layer comprising a metal such as Cu having high electrical conductivity in the fourth layer on the third layer, and a metal comprising a metal preventing interlayer diffusion such as Ni in the fifth layer on the fourth layer. 2 may include, but is not limited to, an adhesive layer including a metal having a high adhesive force such that Au and Ti can be easily bonded to the sixth layer on the fifth layer. .

In addition, the electrode pad region and the current spreading pattern may have the same stacked structure or different stacked structures. For example, since the adhesive layer for wire bonding does not require the current spreading pattern, the adhesive layer may not be formed. In addition, the current spreading pattern may be formed of at least one of, for example, ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, and ZnO, which are materials having transparency and electrical conductivity.

The reflective layer 70 may be formed on the side surface of the light emitting structure 30 including at least the active layer 50.

The reflective layer 70 may be formed on the side surface of the first conductive semiconductor layer 40, the side surface of the active layer 50, and the side surface of the second conductive semiconductor layer 60.

The reflective layer 70 may have a side surface of the first conductive semiconductor layer 40, a side surface of the active layer 50, and a side surface of the second conductive semiconductor layer 60, as well as side surfaces of the ohmic contact layer 20 and the adhesive layer. Can be formed on.

The upper end of the reflective layer 70 is formed up to a partial region of the side surface of the second conductive semiconductor layer 60 adjacent to the active layer 50, and the lower end of the reflective layer 70 is formed of the first electrode ( It may be formed in contact with the upper surface of 10).

The reflective layer 70 includes, for example, at least one or two or more alloys selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf. It is not limited.

When silver (Ag) is used as the reflective layer 70, the reflective layer 70 may have a thickness of at least 200 nm. Silver (Ag) has a relatively large skin depth, which represents the extent to which ultraviolet light passes, compared to aluminum (Al). Therefore, when the thickness is less than 200n, the transmittance becomes larger than the reflectance of the ultraviolet ray, it can not effectively act as a reflection.

When aluminum (Al) is used as the reflective layer 70, the reflective layer 70 may have a thickness in the range of 50 nm to 500 nm.

When the thickness of the reflective layer 70 made of aluminum (Al) is 50 nm or less, when the oxygen material penetrates into the reflective layer 70 due to oxidation of the reflective layer 70 in contact with air, the reflectance by the oxide material Can affect. That is, when the thickness of the reflective layer 70 made of aluminum (Al) is at least 50 nm or more, the reflectance is hardly affected by the oxide material penetrating into the reflective layer 70.

When the thickness of the reflective layer 70 made of aluminum (Al) is 500 nm or more, the stress of the reflective layer 70 increases, and defects such as cracks may occur.

Reflective layer made of aluminum (Al) has a thickness of reflective layer 70 made of aluminum (Al) because the skin depth indicating the extent to which light passes is smaller than silver (Ag) for ultraviolet light. It may be formed thinner than the thickness of 70.

The reflective layer 70 may be formed along at least all sides of the light emitting structure 30. For example, when the light emitting structure 30 has four sides, the reflective layer 70 may be formed on all four sides of the light emitting structure 30. This is for the TM polarized ultraviolet rays generated in the active layer 50 to be reflected in both the x-axis direction and the y-axis direction, and reflect the TM-polarized ultraviolet light propagated in both the x-axis direction and the y-axis direction.

The reflective layer 70 may be inclined at an angle θ of the range of 10 ° to 70 ° with respect to the first electrode 10.

Since the TM polarized ultraviolet rays generated in the active layer 50 proceed in the lateral directions (x, y), the reflective layer 70 may be disposed to be inclined to reflect the TM polarized ultraviolet rays forward.

As shown in FIG. 2, TM polarization tends to be relatively stronger than TE polarized light as the ultraviolet region increases. That is, TM polarization in the wavelength region of approximately 280nm may have a stronger intensity than TE polarization.

As shown in FIG. 3, the TE polarized light proceeds in the z-axis direction, whereas the TM polarized light may proceed in the x-axis direction or the y-axis direction.

Ultraviolet rays may be generated in the active layer 50 of the light emitting device 1 according to the embodiment. In order to generate ultraviolet rays, the active layer 50 may be formed by including Al in GaN or InGaN. Since Al has a large band gap, the band gap of the active layer 50 may increase as Al is added to GaN or InGaN. As the bandgap increases, the wavelength band may change from visible light to ultraviolet light.

Ultraviolet rays generated in the active layer 50 may progress to TE polarization and TM polarization. As described above, the smaller the wavelength of the active layer 50, the stronger TM polarization may be generated than TE polarization. In addition, while TE polarization proceeds in the z-axis direction, TM polarization may proceed in the x-axis direction or the y-axis direction.

Therefore, when the TM polarized light, which occupies most of the UV light, does not have the reflective layer 70 according to the embodiment, the UV light of the TM polarized light is lost through the lateral direction of the active layer 50. Therefore, the light extraction efficiency of the ultraviolet light of the light emitting element is significantly reduced.

In the embodiment, by forming the reflective layer 70 at least on the side of the active layer 50, the TM polarized ultraviolet rays traveling in the lateral direction from the active layer 50 can be reflected to the front, whereby the light extraction efficiency can be remarkably improved.

An insulating layer 65 may be formed between the ohmic contact layer 20 and the reflective layer 70 and between the light emitting structure 30 and the reflective layer 70.

In other words, the insulating layer 65 may be disposed between the ohmic contact layer 20 and the reflective layer 70, between the first conductive semiconductor layer 40 and the reflective layer 70, the active layer 50, and the It may be formed between the reflective layer 70 and between the second conductive semiconductor layer 60 and the reflective layer 70.

In other words, the insulating layer 65 is formed on side surfaces of the ohmic contact layer 20, the first conductive semiconductor layer 40, the active layer 50, and the second conductive semiconductor layer 60. Can be formed.

The reflective layer 70 may be formed on the insulating layer 65.

Accordingly, the insulating layer 65 may have the ohmic contact layer 20 and / or the first conductive semiconductor layer 40 and the second conductive semiconductor layer 60 formed by the reflective layer 70 having conductivity. The electrical short between them can prevent the light emitting element 1 from malfunctioning.

The insulating layer 65 may be made of a material having transparency and insulation. For example, the insulating layer 65 may be silicon oxide or nitride oxide. For example, the insulating layer 65 may be SiO 2 or SiN. However, the embodiment is not limited thereto, and any material having transparency and insulation may be used as the insulating layer 65 of the embodiment.

4 to 7 are views illustrating a manufacturing process of the ultraviolet light emitting device according to the embodiment.

Referring to FIG. 4, a light emitting structure 30 may be formed on the growth substrate 90, and an ohmic contact layer 20 may be formed on the light emitting structure 30.

The growth substrate 90 includes, for example, at least one selected from the group consisting of sapphire (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. .

The light emitting structure 30 may be formed by sequentially growing the second conductive semiconductor layer 60, the active layer 50, and the first conductive semiconductor layer 40 on the growth substrate 90.

The second conductive semiconductor layer 60, the active layer 50, and the first conductive semiconductor layer 40 may be formed of a compound semiconductor material of Group 3 to Group 5 elements, such as GaN, AlN, AlGaN, InGaN, InN, It may include one selected from the group consisting of InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP.

The second conductivity-type semiconductor layer 60 includes an n-type dopant including, for example, Si, Ge, Sn, Se, Te, and the like, and the first conductivity-type semiconductor layer 40 is, for example, Mg, Zn, or Ga. It may include a p-type dopant including, Sr, Ba and the like.

At least Al may be added to the second conductive semiconductor layer 60, the active layer 50, and the first conductive semiconductor layer 40, but the composition ratio to which Al is added is the second conductive semiconductor layer. 60, the active layer 50 and the first conductivity type semiconductor layer 40 may be different from each other.

Therefore, ultraviolet rays including TE polarized light and TM polarized light may be generated from the active layer 50 of the light emitting structure 30 of the embodiment. TM polarized ultraviolet light may have a greater intensity than TE polarized ultraviolet light. From this, it can be seen that TM polarization rather than TE polarization is popular in the ultraviolet region.

The light emitting structure 30 may include, for example, a metal organic chemical vapor deposition (MOCVD), a chemical vapor deposition (CVD), a plasma chemical vapor deposition (PECVD), and a molecular beam. Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), etc. may be formed using, but is not limited thereto.

Meanwhile, a buffer layer (not shown) or an undoped semiconductor layer (not shown) may be formed between the light emitting structure 30 and the growth substrate 90 to alleviate the lattice constant difference between the light emitting structure 30 and the growth substrate 90.

The buffer layer may include, but is not limited to, InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN, and the like.

The ohmic contact layer 20 may be formed on an upper surface of the first conductive semiconductor layer 40, 40. Transparent conductive materials and metals can be optionally used, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), Indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni, Ag, Ni / IrOx / Au, and Ni / It may be implemented in a single layer or multiple layers including at least one selected from the group consisting of IrOx / Au / ITO.

Referring to FIG. 5, all sides of the ohmic contact layer 20, the first conductivity type semiconductor layer 40, the active layer 50, and the second conductivity type semiconductor layer 60 have sloped slopes. Etch these aspects. The area on which the inclined surface is formed may be referred to as a inclined portion.

Subsequently, an insulating layer 65 is formed on the inclined surface, and a reflective layer 70 is formed on the insulating layer 65.

The insulating layer 65 may be made of a light transmitting and insulating material, for example, silicon oxide or oxynitride may be used.

The reflective layer 70 includes at least one or two or more alloys selected from the group consisting of materials having excellent reflectivity, for example Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf. However, this is not limitative.

When silver (Ag) is used as the reflective layer 70, the reflective layer 70 may have a thickness of at least 200 nm.

When aluminum (Al) is used as the reflective layer 70, the reflective layer 70 may have a thickness in the range of 50 nm to 500 nm.

Referring to FIG. 6, after inverting the light emitting structure 30 by 180 degrees, the growth substrate 90 may be removed.

The growth substrate 90 may be removed by at least one of laser lift off (LLO), chemical etching (CLO), or physical polishing.

The laser lift-off LLO intensively irradiates a laser at an interface between the growth substrate 90 and the second conductivity-type semiconductor layer 60 so that the substrate 90 may provide the second conductivity-type semiconductor layer 60. To be separated from When the buffer layer is formed on the growth substrate 90, the buffer layer may also be removed together with the growth substrate 90.

The chemical etching is to remove the growth substrate 90 to expose the second conductivity-type semiconductor layer 60 using wet etching.

The growth substrate 90 is physically polished using the physical polishing machine to sequentially remove the growth substrate 90 from the top surface of the growth substrate 90 to expose the second conductive semiconductor layer 60.

After removing the growth substrate 90, a cleaning process of removing residues of the growth substrate 90 remaining on the upper surface of the second conductivity-type semiconductor layer 60 may be further performed. The cleaning process may include plasma surface treatment or ashing using oxygen or nitrogen.

Referring to FIG. 7, the second electrode 80 is formed on the top surface of the second conductive semiconductor layer 60, and the side surface of the second conductive semiconductor layer 60 and the second electrode 80 are formed. A passivation layer (not shown) may be formed on the upper surface of the second conductive semiconductor layer 60 except for the above.

The passivation layer may include, for example, an insulating material including one selected from the group consisting of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , TiO 2, and Al 2 O 3 . It is not limited.

The passivation layer may be formed by a deposition process such as electron beam deposition, PECVD, sputtering.

The second electrode 80 may be formed in a single layer or a multilayer structure including at least one of Au, Ti, Ni, Cu, Al, Cr, Ag, and Pt.

The second electrode 80 may be formed using a plating process or a deposition process.

Meanwhile, the first electrode 10 may be attached under the ohmic contact layer 20. The first electrode 10 may be formed in contact with the ohmic contact layer 20, the insulating layer 65, and the reflective layer 70.

For example, the first electrode 10 may include titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), and copper (Cu). ), Molybdenum (Mo), copper-tungsten (Cu-W), and a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, SiGe, etc.).

The first electrode 10 may be plated and / or deposited under the light emitting structure 30, or may be attached in the form of a sheet, but is not limited thereto.

8 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.

Referring to FIG. 8, the light emitting device package 100 according to the embodiment may include a body 110, a first electrode layer 122 and a second electrode 80 layer 124 provided on the body 110, and The light emitting device 1 electrically connected to the first electrode layer 122 and the second electrode 80 layer 124 on the body 110, and the light emitting device 1 on the body 110. It includes a molding member 140 surrounding the.

The body 110 may include a silicon material, a synthetic resin material, or a metal material. The body 110 has a cavity 130 having an inclined surface 135 therein when viewed from above.

The first electrode layer 122 and the second electrode 80 layer 124 are electrically separated from each other, and may be formed to penetrate the inside of the body 110. That is, one end of each of the first electrode layer 122 and the second electrode 80 layer 124 is disposed in the cavity 130, and the other end of the first electrode layer 122 and the second electrode 80 layer 124 is attached to an outer surface of the body 110. Exposed to the outside.

The first electrode layer 122 and the second electrode 80 layer 124 may supply power to the light emitting device 1 and may reflect light generated from the light emitting device 1 to increase light efficiency. It may also function to discharge heat generated from the light emitting device 1 to the outside.

The light emitting device 1 may be installed on the body 110 or on the first electrode layer 122 or the second electrode 80 layer 124.

The first and second wires 171 and 181 of the light emitting device 1 may be electrically connected to either the first electrode layer 122 or the second electrode 80 layer 124, but are not limited thereto. Do not.

The molding member 110 may surround the light emitting device 1 to protect the light emitting device 1 from the outside. In addition, the molding member 110 may include a phosphor, and the wavelength of the light emitted from the light emitting device 1 may be changed by the phosphor.

The light emitting device 1 or the light emitting device package 100 according to the embodiment may be applied to a light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and includes a display device or a lighting device, and may include a lighting light, a traffic light, a vehicle headlight, an electronic signage plate, and the like.

1: Light emitting element 10: First electrode
20: ohmic contact layer 30: light emitting structure
40: first conductive semiconductor layer 50: active layer
60: second conductive semiconductor layer 70: reflective layer
80: second electrode 90: growth substrate

Claims (17)

A first conductive semiconductor layer;
An active layer emitting ultraviolet rays on the first conductivity type semiconductor layer;
A second conductivity type semiconductor layer on the active layer; And
And a reflective layer formed on at least a side of the active layer to reflect the ultraviolet rays emitted from the active layer. The method of claim 1,
The reflective layer is an ultraviolet light emitting device for reflecting TM polarized ultraviolet light. The method of claim 1,
The reflective layer is formed on the side surfaces of the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer. The method of claim 1,
And the active layer comprises at least Al. 5. The method of claim 4,
The first and second conductivity-type semiconductor layer is an ultraviolet light emitting device comprising at least Al. The method of claim 1,
The reflective layer comprises at least one or two or more alloys selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf. The method according to claim 6,
When Ag is used as the reflective layer, the reflective layer has a thickness of at least 200 nm or more. The method according to claim 6,
When Al is used as the reflective layer, the reflective layer has a thickness in the range of 50nm to 500nm. The method of claim 1,
An ohmic contact layer under the first conductive semiconductor layer;
An insulating layer between the ohmic contact layer, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer and the reflective layer;
A first electrode under the ohmic contact layer; And
A second electrode on the second conductive semiconductor layer
Ultraviolet light emitting device further comprising. 10. The method of claim 9,
The first electrode includes an ultraviolet light emitting element comprising a support member having conductivity. 10. The method of claim 9,
And the first electrode is formed in contact with the ohmic contact layer, the insulating layer, and the reflective layer. 10. The method of claim 9,
The upper end of the reflective layer is formed to a partial region of the side of the second conductive semiconductor layer adjacent to the active layer. 10. The method of claim 9,
The reflective layer is inclined at an angle (θ) in the range of 10 ° to 70 ° with respect to the first electrode. 10. The method of claim 9,
The insulating layer is an ultraviolet light emitting device comprising any one of silicon oxide and oxynitride. A first electrode;
An ohmic contact layer on the first electrode;
A light emitting structure disposed on the ohmic contact layer, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
A second electrode disposed on the light emitting structure,
The light emitting structure includes a slope having an angle (θ) in the range of 10 ° to 70 ° with respect to the first electrode on the side,
The active layer includes aluminum (Al) and emits light having a wavelength of 280nm to 360nm. 16. The method of claim 15,
The ultraviolet light emitting device further comprising a reflective layer disposed along the inclined portion. 17. The method of claim 16,
And an insulating layer between the light emitting structure and the reflective layer.
KR1020110047706A 2011-05-20 2011-05-20 Ultraviolet light emitting device KR20120129449A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110047706A KR20120129449A (en) 2011-05-20 2011-05-20 Ultraviolet light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110047706A KR20120129449A (en) 2011-05-20 2011-05-20 Ultraviolet light emitting device

Publications (1)

Publication Number Publication Date
KR20120129449A true KR20120129449A (en) 2012-11-28

Family

ID=47513944

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110047706A KR20120129449A (en) 2011-05-20 2011-05-20 Ultraviolet light emitting device

Country Status (1)

Country Link
KR (1) KR20120129449A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014168339A1 (en) 2013-04-12 2014-10-16 서울바이오시스 주식회사 Ultraviolet light-emitting device
KR20150061252A (en) * 2013-11-27 2015-06-04 서울바이오시스 주식회사 Uv light emitting diode and method of fabricating the same
KR20150086887A (en) * 2014-01-21 2015-07-29 엘지이노텍 주식회사 Light emitting device
KR20150089587A (en) * 2014-01-28 2015-08-05 엘지이노텍 주식회사 Light Emitting Device Package
KR20170032641A (en) * 2015-09-15 2017-03-23 엘지이노텍 주식회사 Light emittng device and light emitting device package including the same
WO2017131397A1 (en) * 2016-01-25 2017-08-03 서울반도체주식회사 Ultraviolet light-emitting element
KR20180127472A (en) * 2016-05-11 2018-11-28 니기소 가부시키가이샤 Light emitting element
US10177273B2 (en) 2012-03-29 2019-01-08 Seoul Viosys Co., Ltd. UV light emitting device
WO2020196411A1 (en) * 2019-03-26 2020-10-01 Ｄｏｗａエレクトロニクス株式会社 Point source light emitting diode and method for manufacturing same
JP2020167401A (en) * 2019-03-26 2020-10-08 Ｄｏｗａエレクトロニクス株式会社 Point source light emitting diode and method for manufacturing the same
WO2023033213A1 (en) * 2021-09-06 2023-03-09 엘지전자 주식회사 Semiconductor light-emitting element for display panel and display device comprising same

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10177273B2 (en) 2012-03-29 2019-01-08 Seoul Viosys Co., Ltd. UV light emitting device
KR20140123410A (en) 2013-04-12 2014-10-22 서울바이오시스 주식회사 Uv light emitting device
EP2985792A4 (en) * 2013-04-12 2016-11-16 Seoul Viosys Co Ltd Ultraviolet light-emitting device
WO2014168339A1 (en) 2013-04-12 2014-10-16 서울바이오시스 주식회사 Ultraviolet light-emitting device
KR20150061252A (en) * 2013-11-27 2015-06-04 서울바이오시스 주식회사 Uv light emitting diode and method of fabricating the same
KR20150086887A (en) * 2014-01-21 2015-07-29 엘지이노텍 주식회사 Light emitting device
KR20150089587A (en) * 2014-01-28 2015-08-05 엘지이노텍 주식회사 Light Emitting Device Package
KR20170032641A (en) * 2015-09-15 2017-03-23 엘지이노텍 주식회사 Light emittng device and light emitting device package including the same
WO2017131397A1 (en) * 2016-01-25 2017-08-03 서울반도체주식회사 Ultraviolet light-emitting element
KR20180127472A (en) * 2016-05-11 2018-11-28 니기소 가부시키가이샤 Light emitting element
CN109314157A (en) * 2016-05-11 2019-02-05 日机装株式会社 Deep-UV light-emitting element
CN109314157B (en) * 2016-05-11 2021-05-11 日机装株式会社 Deep ultraviolet light-emitting element
US11355670B2 (en) 2016-05-11 2022-06-07 Nikkiso Co., Ltd. Deep ultraviolet light emitting device
WO2020196411A1 (en) * 2019-03-26 2020-10-01 Ｄｏｗａエレクトロニクス株式会社 Point source light emitting diode and method for manufacturing same
JP2020167401A (en) * 2019-03-26 2020-10-08 Ｄｏｗａエレクトロニクス株式会社 Point source light emitting diode and method for manufacturing the same
WO2023033213A1 (en) * 2021-09-06 2023-03-09 엘지전자 주식회사 Semiconductor light-emitting element for display panel and display device comprising same

Similar Documents

Publication Publication Date Title
KR101014155B1 (en) Light emitting device, method for fabricating the light emitting device and light emitting device package
KR101081135B1 (en) Light emitting device, method for fabricating the light emitting device and light emitting device package
CN103378240B (en) Luminescent device and light emitting device packaging piece
JP5749325B2 (en) Semiconductor light emitting device
KR101020963B1 (en) Light emitting device, method for fabricating the light emitting device and light emitting device package
KR20120129449A (en) Ultraviolet light emitting device
US20120168805A1 (en) Light emitting device and light emitting device package
US20090261370A1 (en) Semiconductor light emitting device
JP5816243B2 (en) Light emitting device and light emitting device package
US9786814B2 (en) Ultraviolet light emitting device
KR100986374B1 (en) Light emitting device, method for fabricating the light emitting device and light emitting device package
KR102175345B1 (en) Light emitting device and lighting system
KR20110096680A (en) Light emitting device, method for fabricating the light emitting device and light emitting device package
US8101958B2 (en) Semiconductor light-emitting device
KR100999701B1 (en) Light emitting device, method for fabricating the light emitting device and light emitting device package
KR102163956B1 (en) Light emitting device and lighting system
KR102250516B1 (en) Light emitting device
KR102200000B1 (en) Light emitting device and lighting system
KR102153125B1 (en) Light emitting device and lighting system
KR102181429B1 (en) Light emitting device and lighting system
KR101500027B1 (en) Semiconductor light emitting device
KR101750207B1 (en) Light emitting device and light emitting device package
KR20170077512A (en) Light emitting device and lighting apparatus
KR102249637B1 (en) Light emitting device and light emitting device package thereof
KR101643410B1 (en) Light emitting device, method for fabricating the light emitting device and light emitting device package

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application