KR20140029617A - A light emitting device package - Google Patents

Abstract

An embodiment of the present invention comprises: a first lead frame; a body disposed on the first lead frame and containing a reflective sidewall to expose a portion of a front surface of the first lead frame; a light emitting device disposed on the front surface thereof; and at least one first wire connecting the light emitting device to the first lead frame, wherein the reflective sidewall has at least one groove exposing a portion of the other surface of the first lead frame and one end of at least one wire passes through at least one groove and is bonded to the other surface thereof.

Description

[0001] A LIGHT EMITTING DEVICE PACKAGE [0002]

An embodiment relates to a light emitting device package.

BACKGROUND ART Light emitting devices such as light emitting diodes (LEDs) and laser diodes (LD) using semiconducting compound semiconductor materials of Group 3-5 or Group 2-6 have been developed for thin film growth technology and device materials, Green, blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize white light rays with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, It has the advantages of response speed, safety, and environmental friendliness.

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.

A light emitting device package is widely used for a lighting device and a display device. The light emitting device package may generally include a body, a lead frame positioned within the body, and a light emitting device (e.g., LED) located in one of the lead frames.

The embodiment provides a light emitting device package capable of improving light efficiency.

A light emitting device package according to an embodiment may include a body including a first lead frame, a reflection sidewall positioned on the first lead frame, and exposing a portion of a front surface of the first lead frame, and a front surface of the exposed first lead frame. A light emitting element disposed thereon, and at least one first wire connecting the light emitting element and the first lead frame, wherein the reflective sidewall is at least one exposing another portion of the front surface of the first lead frame. One end of the at least one first wire passes through the at least one groove and is bonded to another part of the front surface of the first lead frame.

The first groove portion may be positioned adjacent to a boundary line with a portion of the front surface of the exposed first lead frame. The first groove may have a recessed shape in the direction of the reflective sidewall at a boundary between a portion of the front surface of the exposed first lead frame and the reflective sidewall.

The front surface of the first lead frame exposed by the cavity includes a first region in which the light emitting element is disposed, and a second region exposed by the first groove, wherein the second region is from the first region. It may protrude.

The separation distance between the boundary line between the first region and the reflective sidewall and the light emitting device may be 130 μm to 140 μm, and the separation distance between the light emitting device and the first groove may be 500 μm to 600 μm.

The light reflectivity of the reflective sidewall may be higher than the light reflectivity of the first lead frame. The diameter of the second region may be 300um to 400um.

The reflective sidewall includes a plurality of sidewalls, the reflective sidewall having a plurality of grooves positioned in each of the plurality of sidewalls, the plurality of grooves exposing different regions of the front surface of the first lead frame. can do.

The at least one first wire may be plural, and one end of each of the plurality of first wires may be bonded to a corresponding one of different regions of the front surface of the first lead frame.

The light emitting device package may further include a second lead frame positioned in the body spaced apart from the first lead frame and exposing a portion of the front surface by the cavity. The diameter of the exposed area of the front surface of the second lead frame may be 300um to 400um.

The light emitting device package may further include a second wire bonded to a portion of the front surface of the exposed second lead frame, one end of which is bonded to the light emitting element.

The embodiment can improve the light efficiency.

1 is a perspective view of the light emitting device package according to the first embodiment viewed from above.
FIG. 2 is a top view of the light emitting device package shown in FIG. 1.
3 is a bottom view of the light emitting device package shown in Fig.
Fig. 4 shows a side view of the light emitting device package shown in Fig.
5 is another side view of the light emitting device package shown in Fig.
6 is a sectional view taken along the AB direction of the light emitting device package illustrated in FIG. 1.
7 is a perspective view of the light emitting device package according to the second embodiment as viewed from above.
FIG. 8 is a top view of the light emitting device package shown in FIG. 7.
9 is a perspective view of the light emitting device package according to the third embodiment as viewed from above.
FIG. 10 is a top view of the light emitting device package shown in FIG. 9.
FIG. 11 is a bottom view of the light emitting device package shown in FIG. 9.
FIG. 12 is a side view of the light emitting device package illustrated in FIG. 9.
FIG. 13 illustrates another side view of the light emitting device package illustrated in FIG. 9.
FIG. 14 is a sectional view taken along the AB direction of the light emitting device package shown in FIG. 9.
FIG. 15 illustrates an embodiment of the light emitting device illustrated in FIG. 1.
16 illustrates another embodiment of the light emitting device illustrated in FIG. 1.
17 is an exploded perspective view of a lighting device including a light emitting device package according to an embodiment.
18 illustrates a display device including a light emitting device package according to an exemplary embodiment.
19 illustrates a head lamp including a light emitting device package according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings. Hereinafter, a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.

1 is a perspective view of the light emitting device package 100-1 according to the first embodiment as viewed from above, FIG. 2 is a top view of the light emitting device package 100-1 shown in FIG. 1, and FIG. 1 is a bottom view of the light emitting device package 100-1 shown in FIG. 1, FIG. 4 is a side view of the light emitting device package 100-1 shown in FIG. 1, and FIG. 5 is a light emitting device shown in FIG. 1. Another side view of the package 100-1 is shown, and FIG. 6 is a cross-sectional view of the light emitting device package 100-1 shown in FIG. 1 in the AB direction.

1 to 6, the light emitting device package 100-1 includes a body 20, a first lead frame 31, a second lead frame 32, a third lead frame 33, and a light emitting device ( 10), first wire 12, second wire 14, zener diode 11, and resin layer 210.

The body 20 is formed of a highly insulating or thermally conductive substrate such as a silicon-based wafer level package, a silicon substrate, silicon carbide (SiC), aluminum nitride (AlN), or the like, or has a high reflectivity. It may be formed of a resin material such as polyphthalamide (PPA: Polyphthalamide). Also, the body 20 may have a structure in which a plurality of substrates are stacked.

The front surface of the body 20 may have various shapes such as triangle, square, polygon, and round shape according to the use and design of the light emitting device package 100-1. However, the embodiment is not limited to the material, structure, and shape of the body.

A cavity 105 including a reflective sidewall 101 and a bottom 102 may be formed on the front surface of the body 20. The shape of the cavity 105 viewed from above may be circular, square, polygonal, elliptical, cup-shaped, concave container shape, or the like, and the reflective sidewall 101 of the cavity 105 may include the lead frames 31, 32, 33 or the like. It may be perpendicular or inclined with respect to the floor 102.

The first to third lead frames 31, 32, and 33 may be spaced apart from each other to be electrically separated from each other and disposed in the body 20. For example, a portion of the body 20, for example, the bottom 102 of the cavity 105 may be interposed between the first to third lead frames 31, 32, and 33. As shown in FIG. 1, the bottom 102 of the cavity 105 may be bent, but is not limited thereto. In another embodiment, the bottom 102 of the cavity 105 may be a flat surface. In another embodiment, the second lead frame 32 and the third lead frame 33 may be electrically connected to each other.

In FIG. 1, the front surfaces 143 and 144 of each of the second lead frame 32 and the third lead frame 33 are positioned to have a step with the front surface 142 of the first lead frame 31, but embodiments are limited thereto. The front surfaces 142, 143, and 144 of the first to third lead frames 31, 32, and 33 may be located on the same plane in the cavity 101.

The first to third lead frames 31, 32, and 33 may be formed of a conductive material such as metal, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), or tantalum. It may be formed of one of aluminum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), or an alloy thereof, and may have a single layer or a multilayer structure.

The cavity 105 may expose at least a portion of the front surfaces 142, 143, and 144 of each of the first to third lead frames 31, 32, and 33. For example, at least a portion of the front surface 142 of the first lead frame 31, the front surface 143 of the second lead frame 32, and the front surface 144 of the third lead frame 33 may be separated from the cavity 105. May be exposed.

The front surface 142 of the first lead frame 31 exposed by the cavity 105 may include a first region 142-1 for arranging the light emitting device 10 and a first region for wire bonding. The second region 142-2 may protrude from the region 142-1.

As illustrated in FIG. 2, the second region 142-2 may protrude toward the body 20 from a boundary line 148 where the first region 142-1 and the cavity 105 meet.

For example, the shape of the first region 142-1 may be various shapes such as an ellipse, a circle, or a polygon (eg, a rectangle) according to the design shape of the cavity 105. In addition, the shape of the second region 142-2 may be implemented in various shapes such as a hemispherical shape, a circle, an ellipse, or a polygon in consideration of wire bonding.

Since the first region 142-1 is an area of the first lead frame 31 exposed to arrange the light emitting device 10, an area thereof may be determined by the size of the light emitting device 10. In addition, since the second region 142-2 is only an area for bonding the wire 14, the second region 142-2 should have an area larger than the minimum area required for wire bonding. The area of the second region 142-2 may be smaller than the area of the first region 142-1.

For example, the horizontal length L1 of the first region 142-1 may be 1.95 mm to 2.05 mm, and the vertical length L2 may be 1.35 mm to 1.45 mm. In addition, the diameter of the second region 142-2 may be 300 μm or more and smaller than the first upper limit for wire bonding. In this case, the first upper limit may be a length L2 of the first region 142-1.

The light emitting device 10 may be disposed on the front surface 142 of the first lead frame 31. The reflective sidewall 101 may be positioned on an edge region of the front surfaces 142, 143, and 144 of the first to third lead frames 31, 32, and 33. The reflective sidewall 101 may be disposed around the light emitting device 10, and may surround at least a portion of the outer circumference of the first to third lead frames 31, 32, and 33.

In addition, at least a portion of the front surface of the first to third lead frames 31, 32, and 33 may be exposed by the reflective sidewall 101. The reflective sidewall 101 may reflect light incident from the light emitting device 10. The reflective sidewall 101 may be formed of a resin material such as polyphthalamide (PPA) having higher reflectivity than the lead frames 31, 32, and 33.

The reflective sidewall 101 may expose the first region 142-1 of the front surface 142 of the first lead frame 31 on which the light emitting device 10 is disposed, and the front surface of the first lead frame 31. The first recess 101-1 exposing the second region 142-2 of 142 may be provided.

The first groove 101-1 may have a shape that enters into the reflective sidewall 101. That is, the groove 101-1 may have a recessed shape in the direction of the reflective sidewall 101 at a boundary line 148 between the first region 142-1 of the first lead frame 31 and the reflective sidewall 101. .

The body 20 may have a plurality of side surfaces 21 to 24, and the first lead frame 31 may have one end 31-1 exposed to the first side 21 of the body 20. The second lead frame 32 may have one end 32-1 exposed to the second side surface 22 of the body 20, and the third lead frame 33 may have a second portion of the body 20. It may have one end 33-1 exposed to the side 22. In this case, the first side 21 and the second side 22 of the body 20 may be sides facing each other.

As shown in FIG. 3, the first to third lead frames 31, 32, and 33 may be exposed to the rear surface 25 of the body 20. For example, the rear surface 31-2 of the first lead frame 31 is exposed from the rear surface 25 of the body 20, and the rear surface 32-2 of the second lead frame 32 is formed of the body 20. The rear surface 25 may be exposed, and the rear surface 33-2 of the third lead frame 33 may be exposed from the rear surface 25 of the body 20.

The light emitting device 10 disposed on the first lead frame 31 may be a vertical or horizontal light emitting diode, but is not limited thereto. For example, the light emitting device 10 may be a light emitting diode emitting light of red, green, blue, or white light, or an ultraviolet (Ultra Violet) light emitting diode emitting ultraviolet light, but is not limited thereto.

FIG. 15 illustrates an embodiment 300-1 of the light emitting device 10 illustrated in FIG. 1. Referring to FIG. 15, the light emitting device 300-1 includes a substrate 310, a light emitting structure 320, a conductive layer 330, a first electrode 342, and a second electrode 344.

The substrate 310 may be formed of a carrier wafer, a material suitable for semiconductor material growth. Further, the substrate 310 may be formed of a material having high thermal conductivity, and may be a conductive substrate or an insulating substrate. For example, the substrate 310 may be a material comprising at least one of sapphire (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ , GaAs. An irregular pattern may be formed on the upper surface of the substrate 310.

On the substrate 310, a layer or a pattern using a compound semiconductor of Group 2 or Group 6 elements such as a ZnO layer (not shown), a buffer layer (not shown) and an undoped semiconductor layer (not shown) . The buffer layer or the undoped semiconductor layer may be formed using a compound semiconductor of a group III-V element, and the buffer layer may reduce the difference in lattice constant with respect to the substrate. The undoped semiconductor layer may be a GaN- .

The light emitting structure 320 may be a semiconductor layer that generates light and may include a first semiconductor layer 322, an active layer 324, and a second semiconductor layer 326.

The first semiconductor layer 322 may be formed of a compound semiconductor such as a group III-V, a group II-VI, or the like, and may be doped with a first conductivity type dopant. For example, the first semiconductor layer 322 may be a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? , an n-type dopant (e.g., Si, Ge, Sn, etc.) may be doped.

The active layer 324 can generate light by energy generated in the recombination process of electrons and holes provided from the first semiconductor layer 322 and the second semiconductor layer 326 .

The active layer 324 may be a compound semiconductor of a semiconductor compound, such as a Group 3-V-5 or a Group 2-VI-6 compound semiconductor, and may be a single well structure, a multi-well structure, a quantum- Dot) structure or the like. When the active layer 324 is a quantum well structure, a well layer having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) And a barrier layer having a composition formula of In _a Al _b Ga _1-ab N (0? A? 1, 0? B? 1, 0? A + b? 1). The well layer may be a material having a band gap lower than the energy band gap of the barrier layer.

The second semiconductor layer 326 may be formed of a compound semiconductor such as a group III-V element, a group II-VI element, or the like, and the second conductivity type dopant may be doped. For example, the second semiconductor layer 326 may be a semiconductor having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? Type dopant (e.g., Mg, Zn, Ca, Sr, Ba) can be doped.

The light emitting structure 320 may expose a part of the first semiconductor layer 322 by removing a portion of the second semiconductor layer 326, the active layer 324 and the first semiconductor layer 322.

The conductive layer 330 not only reduces the total reflection but also increases the extraction efficiency of the light emitted from the active layer 324 to the second semiconductor layer 326 because of its good light transmittance.

The conductive layer 330 may include a transparent conductive oxide such as ITO (indium tin oxide), TO (tin oxide), IZO (indium zinc oxide), ITZO (indium tin zinc oxide), IAZO (indium aluminum zinc oxide) Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), AZO (Aluminum Zinc Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IrOx, RuOx, RuOx / ITO, Ni, / Au, or Ni / IrOx / Au / ITO.

The first electrode 342 is disposed on the exposed first semiconductor layer 322 and the second electrode 344 is disposed on the conductive layer 330.

FIG. 16 shows another embodiment 300-2 of the light emitting device 10 shown in FIG. 1.

Referring to FIG. 16, the light emitting device 300-2 may include a second electrode part 405, a protective layer 440, a current blocking layer 445, a light emitting structure 450, and a passivation layer 465. , And a first electrode part 470.

The second electrode unit 405 supplies power to the light emitting structure 450 together with the first electrode unit 470. The second electrode unit 405 includes a support 410, a bonding layer 415, a barrier layer 420, a reflective layer 425, and an ohmic layer 430, . ≪ / RTI >

The support layer 410 supports the light emitting structure 450. The support layer 210 may be formed of a metal or a semiconductor material. The support layer 410 may also be formed of a material having high electrical conductivity and high thermal conductivity. For example, the support layer 410 may be formed of a metal including at least one of copper (Cu), a copper alloy, gold (Au), nickel (Ni), molybdenum (Mo), and copper- Material, or a semiconductor including at least one of Si, Ge, GaAs, ZnO, and SiC.

The bonding layer 415 may be disposed between the supporting layer 410 and the barrier layer 420 and may serve as a bonding layer for bonding the supporting layer 410 to the barrier layer 420. The bonding layer 415 may include at least one of a metal material, for example, In, Sn, Ag, Nb, Pd, Ni, Au and Cu. The bonding layer 415 is formed to bond the supporting layer 410 by bonding. Therefore, when the supporting layer 410 is formed by plating or vapor deposition, the bonding layer 215 may be omitted.

The barrier layer 420 is disposed under the reflective layer 425, the ohmic layer 430 and the protective layer 440 and the metal ions of the bonding layer 415 and the support layer 410 are disposed on the reflective layer 425, The light can be prevented from diffusing to the light emitting structure 450 through the first and second light emitting layers 430 and 430. For example, the barrier layer 420 may include at least one of Ni, Pt, Ti, W, V, Fe, and Mo, and may be a single layer or a multilayer.

The reflective layer 425 may be disposed on the barrier layer 420 and may reflect light incident from the light emitting structure 450 to improve light extraction efficiency. The reflective layer 425 may be formed of a metal or an alloy containing at least one of a reflective material such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf.

The reflective layer 425 may be formed of a multilayer of a metal or an alloy and a transparent conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, or ATO. / Ag / Ni, AZO / Ag / Ni, or the like.

The ohmic layer 430 may be disposed between the reflective layer 425 and the second semiconductor layer 452 and may be ohmic contacted with the second semiconductor layer 452 to smoothly supply power to the light emitting structure 450. [ .

The ohmic layer 430 can be formed by selectively using the light-transmitting conductive layer and the metal. For example, the ohmic layer 430 may include at least one of a metal material that makes an ohmic contact with the second semiconductor layer 452, for example, Ag, Ni, Cr, Ti, Pd, Ir, Sn, Ru, Pt, Au, can do.

The protective layer 440 may be disposed on the edge region of the second electrode layer 405. For example, the protective layer 440 may be disposed on the edge region of the ohmic layer 430, or the edge region of the reflective layer 425, or the edge region of the barrier layer 420, .

The protective layer 440 can prevent the interface between the light emitting structure 450 and the second electrode layer 405 from being peeled off so that the reliability of the light emitting device 300-2 is lowered. The protective layer 440 is an electrically insulating material, e.g., ZnO, SiO _2, Si ₃ N _4, TiOx (x is a positive real number), or Al ₂ O ₃ Or the like.

The current blocking layer 445 may be disposed between the ohmic layer 430 and the light emitting structure 450. The upper surface of the current blocking layer 445 is in contact with the second semiconductor layer 452 and the lower surface or the lower surface and the side surface of the current blocking layer 445 can be in contact with the ohmic layer 430. The current blocking layer 445 may be arranged so that at least a part of the current blocking layer 445 overlaps with the first electrode portion 470 in the vertical direction.

The current blocking layer 445 may be formed between the ohmic layer 430 and the second semiconductor layer 452 or may be formed between the reflective layer 425 and the ohmic layer 430. However,

The light emitting structure 450 may be disposed on the ohmic layer 430 and the protective layer 440. The side surface of the light emitting structure 450 may be an inclined surface in an isolation etching process that is divided into unit chips.

The light emitting structure 450 may include a second semiconductor layer 452, an active layer 454, and a first semiconductor layer 456, and may be the same as described with reference to FIG. 15, and description thereof is omitted to avoid duplication. do.

The passivation layer 465 may be disposed on the side of the light emitting structure 450 to electrically protect the light emitting structure 450. The passivation layer 465 may be disposed on the top surface of the first semiconductor layer 456 or on the top surface of the protective layer 440. The passivation layer 465 is an insulating material, e.g., SiO _2, SiO _x, SiO _x N _y, Si ₃ N ₄ , or Al ₂ O ₃ Can be.

The first electrode portion 470 may be disposed on the first semiconductor layer 456. The first electrode part 470 may have a predetermined pattern shape. A roughness pattern (not shown) may be formed on the upper surface of the first semiconductor layer 456 to increase light extraction efficiency. A roughness pattern (not shown) may also be formed on the top surface of the first electrode 470 to increase the light extraction efficiency.

As illustrated in FIG. 1, the light emitting device 10 may be electrically connected to the first lead frame 31 and the second lead frame 32 by a wire bonding method.

The first wire 12 may electrically connect the light emitting element 10 and the first lead frame 31. For example, one end of the first wire 12 may be bonded to the light emitting element 10 (eg, the first electrode 342 or the second electrode 344 shown in FIG. 15), and the other end of the first wire 12 may be bonded. May be bonded to the second region 142-2 of the first lead frame 31 through the first groove 101-1.

The second wire 14 may electrically connect the light emitting element 10 and the second lead frame 32 to each other. For example, one end of the second wire 14 may be connected to the light emitting device 10 (eg, the second electrode 344 or the first electrode 342 of the light emitting device 300-1 shown in FIG. 15). The other end of the second wire 14 may be connected to the front surface 143 of the second lead frame 32.

The Zener diode 11 may be disposed on the front surface 143 of the second lead frame 32 to improve the withstand voltage of the light emitting device package 100-1. The third wire 16 may electrically connect the zener diode 11 and the front surface 142 of the first lead frame 31, for example, the first region 142-1.

The resin layer 210 shown in FIG. 6 may be filled in the cavity 105 of the body 20 to seal and protect the light emitting device 10. The resin layer 210 may be made of a transparent polymer resin such as epoxy or silicon.

The resin layer 210 may include a phosphor 212 to change the wavelength of the light emitted from the light emitting device 10. For example, the resin layer 210 may include at least one of a red phosphor, a green phosphor, and a yellow phosphor.

The light emitting device package 100-1 may further include a lens (not shown) disposed on the resin layer 210. The lens (not shown) may control light distribution of light emitted from the light emitting device package 100-1.

The front surfaces 142, 143, and 144 of the first to third lead frames 31, 32, and 33 to reflect light generated from the light emitting device 10 may be formed of a reflective material to reflect light generated from the light emitting device 10. For example, it may be made of silver (Ag), and the reflective sidewall 101 may be made of a PPA resin material.

The PPA forming the reflective sidewall 101 has a higher reflectance than the silver Ag forming the lead frames 31, 32, and 33. Therefore, when the exposure area of the lead frames 31, 32, 33 in the cavity 105 is reduced and the area of the reflective sidewall 101 is increased, the light efficiency of the light emitting device package 100-1 may be improved.

In the first embodiment, the cavity 105-1 is provided on the reflective sidewall 101 to expose only a part of the front surface 142 of the first lead frame 31 required for wire bonding. The reflectance may be improved by reducing the area of the exposed front surface 142 of the one lead frame 31 and relatively increasing the area occupied by the reflective sidewall 101. For this reason, the first embodiment may improve light efficiency of the light emitting device package 100-1.

FIG. 7 is a perspective view of the light emitting device package 100-2 according to the second embodiment, and FIG. 8 is a top view of the light emitting device package 100-2 shown in FIG. 7. The same reference numerals as those of FIGS. 1 and 2 denote the same configuration, and the descriptions overlapping with the foregoing description will be omitted or briefly described.

Referring to FIGS. 7 and 8, the reflective sidewall 101 ′ of the second embodiment includes a plurality of grooves (eg, 101-101) that expose portions of the front surface 142 of the first lead frame 31 for wire bonding. 1, 101-2, 101-3).

The plurality of grooves (eg, 101-1, 101-2, and 101-3) are regions other than the first region 142-1 of the first lead frame 31 that is exposed to mount the light emitting device 10. (Eg, 142-2, 142-3, 142-4).

Each of the plurality of grooves (eg, 101-1, 101-2, and 101-3) may be spaced apart from each other, and may be formed into the reflective sidewall 101 '. Each of the plurality of grooves (eg, 101-1, 101-2, and 101-3) is reflected at the boundary line 148 between the first region 142-1 and the reflective sidewall 101 'of the first lead frame 31. It may have a recessed shape in the sidewall 101 'direction.

The reflective sidewall 101 ′ may be composed of a plurality of sidewalls 201, 202, 203, and 204. The plurality of grooves (eg, 101-1, 101-2, 101-3) may be located on each of the other sidewalls of the plurality of sidewalls 201,202,203,204.

For example, as shown in FIG. 8, the first groove 101-1 may be located in the first sidewall 201 and may expose the second region 142-2 of the first lead frame 31. Can be.

The second groove 101-2 may be located in the second sidewall 202 and may expose the third region 142-3 of the first lead frame 31. The third groove 101-3 may be located in the fourth sidewall 204 and may expose the fourth region 152-4 of the first lead frame 31. Since the third sidewall 203 is adjacent to the second and third lead frames 32 and 33, the third sidewall 203 is far from wire-bonded with the light emitting device 10. For this reason, the groove portion for wire bonding may not be formed in the third sidewall 203, but the embodiment is not limited thereto.

Each of the wires 12, 13, and 15 may electrically connect the light emitting device 10 and any one of the second to fourth regions 142-2, 142-3, and 142-4. That is, one end of each of the wires 12, 13, and 15 may be bonded to a corresponding one of the second to fourth regions 142-2, 142-3, and 142-4 of the first lead frame 31. have.

For example, one end of the first wire 12 may be bonded to the light emitting device 10, and the other end of the first wire 12 may pass through the first groove portion 101-1 to form the second region 142 of the first lead frame 31. -2) may be bonded.

In addition, one end of the fourth wire 13 may be bonded to the light emitting device 10, and the other end of the fourth wire 13 may be bonded to the third region 142-3 through the second groove 101-2.

In addition, one end of the fifth wire 15 may be bonded to the light emitting device 10, and the other end of the fifth wire 15 may be bonded to the fourth region 142-4 through the third groove portion 101-3.

Although the second embodiment shows a reflective sidewall 101 'having three grooves 101-1, 101-2, and 101-3, the embodiment is not limited thereto, and another embodiment has two or more grooves. And reflective sidewalls.

9 is a perspective view of the light emitting device package 100-3 according to the third embodiment as viewed from above, FIG. 10 is a top view of the light emitting device package 100-3 shown in FIG. 9, and FIG. 9 is a bottom view of the light emitting device package 100-3 shown in FIG. 9, FIG. 12 is a side view of the light emitting device package 100-3 shown in FIG. 9, and FIG. 13 is a light emitting device shown in FIG. 9. Another side view of the package 100-3 is shown, and FIG. 14 is a cross-sectional view of the light emitting device package 100-1 shown in FIG. 9 in the AB direction.

The same reference numerals as those in FIGS. 1 to 6 denote the same components, and the descriptions overlapping with the above description will be omitted or briefly described.

9 to 14, the light emitting device package 100-3 may include a body 20 ′, a first lead frame 31, a second lead frame 32 ′, a light emitting device 10, and a first wire. 12, the second wire 14, and the resin layer 210.

Compared to the first embodiment 100-1, the third embodiment 100-3 shows the exposed area of the first lead frame 31 and the second lead frame 32 ′ exposed by the cavity 105 ′. ) Shape and exposure area may vary.

In addition, the first embodiment 100-1 has three lead frames 31, 32, and 33, while the third embodiment 100-3 has two lead frames 31, 32 ′. Can have In addition, in the first embodiment 100-1, the number of the ends 31-1 of the first lead frame 31 exposed to the side surface of the body 20 is two, whereas in the third embodiment (100-3) ) May be one of the ends 31-1 ′ of the first lead frame 31 ′ exposed to the side of the body 20.

The front surface 143 of the second lead frame 32 ′ may be coplanar with the front surface 142 of the first lead frame 31, and the first area 142-of the first lead frame 31 may be disposed on the same plane. 1) may be a minimum area necessary for mounting the light emitting device 10. Of course, the area of the first region 142-1 may be determined according to the size M1 × M2 of the light emitting device 10.

As illustrated in FIG. 10, the separation distance D1 between the boundary line 148 between the first region 142-1 and the reflective sidewall 101 ′ and the light emitting device 10 may be 130 μm or more. However, when the separation distance D1 is too large, the light reflectance of the light emitting device package may be reduced. Therefore, in consideration of the minimum area for mounting the light emitting device 10 and the light reflectance of the light emitting device package 100-1, the separation distance D1 may be, for example, 130 μm to 140 μm.

In addition, a distance D2 between the light emitting device 10 and the second region 142-2 may be 500 μm or more for bonding the first wire 12. Here, D2 may be a separation distance between the light emitting device 10 and the first groove 101-1. For example, when considering the minimum distance required for wire bonding and the light reflectance of the light emitting device package 100-1, the separation distance D2 may be 500 μm to 600 μm.

The diameter L3 of the second region 142-2 required for bonding the first wire 12 may be 300 μm or more and smaller than the second upper limit. In this case, the second upper limit value may be a value obtained by adding 260 μm to the vertical length M2 of the light emitting device 10. For example, in consideration of the wire bonding and the light reflectance of the light emitting device package, the diameter L3 of the second region 142-2 may be about 300 μm to about 400 μm. In this case, L3 may be the minimum diameter of the second region 142-2.

The front surface 143 ′ of the second lead frame 32 ′ may expose only an area necessary for bonding the second wire 14. In this case, the shape of the exposed area 143 ′ of the second lead frame 32 ′ may be implemented in various shapes such as a hemispherical shape, a circle, an ellipse, or a polygon.

In this case, the diameter L4 of the exposed region 143 'of the second lead frame 32' exposed by the cavity 105 may be 300 μm or more. For example, in consideration of wire bonding and light reflectance of the light emitting device package, the diameter L4 of the exposed region 143 'of the second lead frame 32' may be 300 μm to 400 μm. In this case, L4 may be the minimum diameter of the exposed area 143 'of the second lead frame 32'.

That is, the first region 142-1 of the first lead frame 31 exposed by the cavity 105 ′ may have a minimum area necessary for mounting the light emitting device 10, and may reflect the sidewall 101 ′. ) May have a first groove 101-1 exposing a second area 142-2 having a minimum area necessary for wire bonding.

Therefore, in comparison with the first embodiment, the third embodiment has a second lead exposed for bonding the second wire 14 and the area of the first lead frame 31 exposed for mounting the light emitting device 10. Since the exposed area of the frame 32 is relatively small, the area occupied by the reflective sidewall 101 'relative to the exposed areas of the lead frames 31 and 32 may be relatively increased, thereby improving the reflectance. As a result, the third embodiment may further improve light efficiency than the second embodiment.

17 is an exploded perspective view of a lighting device including a light emitting device package according to an embodiment. Referring to FIG. 17, the lighting apparatus includes a light source 750 for projecting light, a heat dissipation unit 740 for emitting heat of the light source, a housing 700 for accommodating the light source 750 and the heat dissipation unit 740, and The holder 760 couples the light source 750 and the heat dissipation part 740 to the housing 700.

The housing 700 may include a socket coupling portion 710 coupled to an electric socket (not shown), and a body portion 730 connected to the socket coupling portion 710 and having a light source 750 embedded therein. One air flow hole 720 may be formed through the body portion 730.

A plurality of air flow holes 720 may be provided on the body portion 730 of the housing 700 and one or more air flow holes 720 may be provided. The air flow port 720 may be disposed radially or in various forms on the body portion 730.

The light source 750 may include a plurality of light emitting device packages 752 mounted on the substrate 754. [ The substrate 754 may have a shape that can be inserted into the opening of the housing 700 and may be made of a material having a high thermal conductivity to transmit heat to the heat dissipating unit 740 as described later.

The plurality of light emitting device packages 752 may be any one of the above-described embodiments 100-1 to 100-3. A holder 760 is provided below the light source 750, and the holder 760 may include a frame and other air flow holes. Although not shown, an optical member may be provided under the light source 750 to diffuse, scatter, or converge light projected from the light emitting device package 752 of the light source 750.

18 illustrates a display device including a light emitting device package according to an exemplary embodiment. Referring to FIG. 18, the display device 800 includes a bottom cover 810, a reflector 820 disposed on the bottom cover 810, light emitting modules 830 and 835 that emit light, and a reflector 820. ) An optical sheet including a light guide plate 840 which is disposed in front of the light guide plate and guides light emitted from the light emitting modules 830 and 835 to the front of the display device, and prism sheets 850 and 860 disposed in front of the light guide plate 840. And a display panel 870 disposed in front of the optical sheet, an image signal output circuit 872 connected to the display panel 870 and supplying an image signal to the display panel 870, and in front of the display panel 870. It may include a color filter 880 disposed. Here, the bottom cover 810, the reflection plate 820, the light emitting modules 830 and 835, the light guide plate 840, and the optical sheet may form a backlight unit.

The light emitting module may include light emitting device packages 835 mounted on the substrate 830. The substrate 830 may be a PCB or the like. The light emitting device package 835 may be any one of the embodiments 100-1 to 100-3.

The bottom cover 810 can house components within the display device 800. [ Also, the reflection plate 820 may be formed as a separate component as shown in the drawing, or may be provided on the rear surface of the light guide plate 840 or on the front surface of the bottom cover 810 in a state of being coated with a highly reflective material .

Here, the reflection plate 820 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and polyethylene terephthalate (PET) can be used.

The light guide plate 830 may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), or polyethylene (PE).

The first prism sheet 850 may be formed of a light-transmissive and elastic polymeric material on one side of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, as shown in the drawings, the plurality of patterns may be provided with a floor and a valley repeatedly as stripes.

In the second prism sheet 860, the direction of the floor and the valley on one side of the supporting film may be perpendicular to the direction of the floor and the valley on one side of the supporting film in the first prism sheet 850. This is for evenly distributing the light transmitted from the light emitting module and the reflective sheet to the front surface of the display panel 1870.

Although not shown, a diffusion sheet may be disposed between the light guide plate 840 and the first prism sheet 850. The diffusion sheet may be made of polyester and polycarbonate-based materials, and the light incidence angle can be maximized by refracting and scattering light incident from the backlight unit. The diffusion sheet includes a support layer including a light diffusing agent, a first layer formed on the light exit surface (first prism sheet direction) and a light incidence surface (in the direction of the reflection sheet) . ≪ / RTI >

In an embodiment, the diffusion sheet, the first prism sheet 850, and the second prism sheet 860 make up an optical sheet, which may be made of other combinations, for example a microlens array, A combination of one prism sheet and a microlens array, or the like.

The display panel 870 may include a liquid crystal display (LCD) panel, and may include other types of display devices that require a light source in addition to the liquid crystal display panel 860.

19 illustrates a head lamp 900 including a light emitting device package according to an embodiment. Referring to FIG. 19, the head lamp 900 includes a light emitting module 901, a reflector 902, a shade 903, and a lens 904.

The light emitting module 901 may include a plurality of light emitting device packages (not shown) disposed on a substrate (not shown). In this case, the light emitting device package may be any one of the above-described embodiments 100-1 to 100-3.

The reflector 902 reflects the light 911 emitted from the light emitting module 901 in a predetermined direction, for example, toward the front 912.

The shade 903 is disposed between the reflector 902 and the lens 904 and reflects off or reflects a part of the light reflected by the reflector 902 toward the lens 904 to form a light distribution pattern desired by the designer. The one side portion 903-1 and the other side portion 903-2 of the shade 903 may have different heights from each other.

The light emitted from the light emitting module 901 can be reflected by the reflector 902 and the shade 903 and then transmitted through the lens 904 and directed toward the front of the vehicle body. The lens 904 can refract the light reflected by the reflector 902 forward.

 The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

10: light emitting element 11: zener diode
12,13,14,15,16: wires 20: body
31, 32, 33: first to third lead frame 210: resin layer
310: substrate 320, 450: light emitting structure
330: conductive layer 342: first electrode
344: second electrode 405: second electrode portion
410: support layer 415: bonding layer
420: barrier layer 425: reflective layer
430: ohmic layer 440: protective layer
445: current blocking layer 465: passivation layer
470: first electrode part.

Claims (12)

A first lead frame;
A body disposed on the first lead frame and including a reflective sidewall exposing a portion of the front surface of the first lead frame;
A light emitting element disposed on a front surface of the exposed first lead frame; And
At least one first wire connecting the light emitting element and the first lead frame,
The reflective sidewall,
At least one groove portion exposing another portion of the front surface of the first lead frame,
One end of the at least one first wire is bonded to another part of the front surface of the first lead frame through the at least one groove. The method of claim 1, wherein the first groove portion,
The light emitting device package is located adjacent to the boundary with a portion of the front surface of the exposed first lead frame. 3. The method of claim 2,
The first recessed portion of the light emitting device package is formed in the direction of the reflective side wall at the boundary line between the portion of the front surface of the exposed first lead frame and the reflective side wall. The method of claim 1,
The front surface of the first lead frame exposed by the cavity,
A first region in which the light emitting element is disposed; And
A second region exposed by the first groove,
The second region protrudes from the first region. 5. The method of claim 4,
The separation distance between the boundary line between the first region and the reflective sidewall and the light emitting device is 130um to 140um, and the separation distance between the light emitting device and the first groove is 500um to 600um. The method of claim 1,
The light reflectance of the reflective side wall is higher than the light reflectance of the first lead frame package. 5. The method of claim 4,
The second region has a diameter of 300um ~ 400um light emitting device package. The method of claim 1,
The reflective sidewall comprises a plurality of sidewalls,
The reflective sidewall has a plurality of grooves positioned in each of the plurality of sidewalls, and the plurality of grooves expose different regions of the front surface of the first lead frame. 9. The method of claim 8,
The at least one first wire is plural, and one end of each of the plurality of first wires is bonded to a corresponding one of different regions of the front surface of the first lead frame. The method of claim 1,
And a second lead frame spaced apart from the first lead frame, the second lead frame being partially exposed on the front surface by the cavity. 11. The method of claim 10,
The light emitting device package having a diameter of the exposed area of the front surface of the second lead frame is 300um ~ 400um. 11. The method of claim 10,
And a second wire, one end of which is bonded to the light emitting element and the other end of which is bonded to a portion of the front surface of the exposed second lead frame.

Images