CN107546310A - Light emission diode package member - Google Patents

Light emission diode package member Download PDF

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Publication number
CN107546310A
CN107546310A CN201710363240.1A CN201710363240A CN107546310A CN 107546310 A CN107546310 A CN 107546310A CN 201710363240 A CN201710363240 A CN 201710363240A CN 107546310 A CN107546310 A CN 107546310A
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CN
China
Prior art keywords
reflecting surface
shell
light emission
region
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710363240.1A
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Chinese (zh)
Other versions
CN107546310B (en
Inventor
金赫骏
李亨根
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Seoul Semiconductor Co Ltd
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Seoul Semiconductor Co Ltd
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Filing date
Publication date
Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Priority to CN201810698176.7A priority Critical patent/CN108511580A/en
Publication of CN107546310A publication Critical patent/CN107546310A/en
Application granted granted Critical
Publication of CN107546310B publication Critical patent/CN107546310B/en
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Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to light emission diode package member, the present invention includes：Lead frame, it includes the 1st lead member and the 2nd lead member spaced apart from each other；Shell, it supports the lead frame, including the 1st region for exposing a upper surface part more than any one in 1st lead member and the 2nd lead member；And light-emitting diode chip for backlight unit, it is mounted on the 1st region of the shell；The shell also includes the 1st reflecting surface obliquely extended from outer lateral 1st area side of the shell and the 2nd reflecting surface that the upper surface of any one in the 1st lead member and the 2nd lead member that the 1st region is exposed is extended obliquely to from the 1st reflecting surface, and the angle of inclination of the 2nd reflecting surface is more than the angle of inclination of the 1st reflecting surface.According to the present invention, the angle of inclination of the housing interior side-wall of light emission diode package member is formed with releiving, it is thus possible to improve the luminous efficiency of light emission diode package member.

Description

Light emission diode package member
Technical field
The present invention relates to light emission diode package member, more specifically, be related to it is a kind of on shell formed with reflecting surface Light emission diode package member.
Background technology
Light emitting diode is as the inorganic semiconductor for the light that is compound and occurring by electronics and hole being discharged into outside Element, just used recently in the multiple fields such as display device, auto lamp, general lighting.This light emitting diode has the life-span Long, the advantages of power consumption is low, fast response time.Therefore, it is used for light in various field using the light-emitting device of light emitting diode Source.
Conventional light emission diode package member is in the state of light-emitting diode chip for backlight unit is configured on lead frame, by shell Encapsulation.Moreover, the madial wall of shell has predetermined angle, so that the light to be lighted from light-emitting diode chip for backlight unit can be in encapsulation The madial wall reflection of shell.
Now, the electrical connection of light-emitting diode chip for backlight unit and lead frame can utilize metal wire, in order to light-emitting diodes Die carries out wire bonding, it is necessary to the space formed more than set between light-emitting diode chip for backlight unit and the madial wall of shell. But in the state of the size of shell is set, in order to ensure the space for light-emitting diode chip for backlight unit attachment, the madial wall of shell It can only be bordering on and be vertically formed, the problem of can not larger playing the effect as reflecting surface accordingly, there exist the madial wall of shell.
The content of the invention
The invention solves problem be to provide it is a kind of can be improved by the reflection in the madial wall of shell it is luminous The light emission diode package member of efficiency.
Technological means
The present invention provides a kind of light emission diode package member, wherein, including：Lead frame, it includes the spaced apart from each other 1st Lead member and the 2nd lead member；Shell, it supports the lead frame, including makes the 1st lead member and the 2nd lead The 1st region that a upper surface part more than any one in part is exposed；And light-emitting diode chip for backlight unit, it is mounted on described 1st region of shell；The shell also includes the 1st reflecting surface and the 2nd reflecting surface, and the 1st reflecting surface is outside the shell Lateral 1st area side obliquely extends, and the 2nd reflecting surface is extended obliquely to the described 1st from the 1st reflecting surface The upper surface of any one in the 1st lead member and the 2nd lead member that region is exposed, the inclination angle of the 2nd reflecting surface Angle of inclination of the degree more than the 1st reflecting surface.
In addition, the present invention provides a kind of light emission diode package member, wherein, including：Lead frame, it includes being spaced from each other The 1st lead member and the 2nd lead member；Shell, it supports the lead frame, including makes the 1st lead member and the 2nd The 1st region that a upper surface part more than any one in lead member is exposed；And light-emitting diode chip for backlight unit, it is mounted on 1st region of the shell, the shell obliquely extend from outer lateral 1st area side of the shell, the 1st area The area in domain is the 10% to 30% of the plane upper surface area of the light emission diode package member.
In addition, the present invention provides a kind of light emission diode package member, wherein, including：Lead frame, it includes being spaced from each other The 1st lead member and the 2nd lead member；Shell, it supports the lead frame, including makes the 1st lead member and the 2nd The 1st region that a upper surface part more than any one in lead member is exposed；And light-emitting diode chip for backlight unit, it is mounted on 1st region of the shell, the shell include being formed at the upper surface of upper end and outer lateral 1st area from the shell Domain rolls the reflecting surface tiltedly extended, and step difference is formed between the upper surface and the reflecting surface.
In addition, the present invention provides a kind of light emission diode package member, wherein, including：Lead frame, it includes being spaced from each other The 1st lead member and the 2nd lead member；Shell, it supports the lead frame, including makes the 1st lead member and the 2nd The 1st region that a upper surface part more than any one in lead member is exposed and make the 1st lead member and the 2nd draw The 2nd region that another a upper surface part in line part is exposed；And light-emitting diode chip for backlight unit, it is mounted on the shell The 1st region, the shell includes：Reflecting surface, obliquely extend in outer lateral 1st area side of the shell；Tilt Face, from the reflecting surface obliquely runs out to the 1st lead member and the 2nd lead member exposed in the 2nd region Another upper surface.
Technique effect
According to the present invention, the angle of inclination of the housing interior side-wall of light emission diode package member is formed with releiving, it is thus possible to Improve the luminous efficiency of light emission diode package member.
Moreover, as described above, formed with releiving on the inside of shell to improve the luminous efficiency of light emission diode package member The angle of inclination of wall, thus prevent that the exposed area size that can mount the lead frame of light-emitting diode chip for backlight unit from reducing, therefore, Housing interior side-wall includes the 1st reflecting surface and the 2nd reflecting surface, the angle of inclination of the 2nd reflecting surface is more than the inclination angle of the 1st reflecting surface Degree, so as to prevent the size of the exposed area of lead frame from reducing.
In addition, the angle of inclination of the madial wall end of the shell as reflecting surface is increased, it is luminous so as to make to mount The space of diode chip for backlight unit, which is realized, to be maximized.Further, the angle at the end for making housing interior side-wall is less than 90 so that end is anti- The light penetrated is also delivered to outside, so as to improve the luminous efficiency of light emission diode package member.
Moreover, the upper side of shell has predetermined width, and protrude and cause with reflecting mask step difference, thus outside During the inner side packing matcrial of shell and formation, it can prevent encapsulant from spilling into the outside of shell.
Further, angle side width is even larger than the side width in shell upper face, occur in production process External impact, the problems such as can also preventing outer casing rupture.Furthermore it is possible to formed the angle side in shell upper face shape tool There is curve, the shape of reflecting surface also has curve, enabling improve reflection of the luminous light of light-emitting diode chip for backlight unit in angle side The efficiency that face is reflected.
In addition, the 2nd region is formed on shell, expose the 2nd lead member so that the 1st region and the 2nd region it Between, shell protrudes from top and formed, thus the light of light-emitting diode chip for backlight unit release is not directly to Zener diode, has energy The light loss caused by Zener diode is enough set to realize the effect minimized.
In addition, the upper surface in the next door being configured between the 1st region and the 2nd region includes the 1st reflecting surface, the 2nd reflecting surface And the 2nd inclined plane, as the 2nd inclined plane tilts down from the 2nd reflection towards the 2nd area side so that Zener diode lead It is bonded to that the process of the 1st lead member in the 1st region is easy, the length of lead shortens, so as to can reduce because lead is led The effect of the light interference of cause.
Brief description of the drawings
Fig. 1 is the stereogram of the light emission diode package member of diagram the 1st embodiment of the invention；
Fig. 2 is the top view of the light emission diode package member of diagram the 1st embodiment of the invention；
Fig. 3 is the profile along Fig. 2 intercepting line AA' interceptions；
Fig. 4 is the stereogram of the light emission diode package member of diagram the 2nd embodiment of the invention；
Fig. 5 is the top view of the light emission diode package member of diagram the 2nd embodiment of the invention；
Fig. 6 is the profile along Fig. 5 intercepting line AA' interceptions；
Fig. 7 is the example that the light emission diode package member of diagram the 2nd embodiment of the invention includes the situation of encapsulant Figure；
Fig. 8 is the stereogram of the light emission diode package member of diagram the 3rd embodiment of the invention；
Fig. 9 is the top view of the light emission diode package member of diagram the 3rd embodiment of the invention；
Figure 10 is the profile along Fig. 2 intercepting line AA' interceptions；
Figure 11 is the profile of the light emission diode package member of diagram the 4th embodiment of the invention；
Figure 12 is the profile of the light emission diode package member of diagram the 5th embodiment of the invention；
Figure 13 is the profile of the light emission diode package member of diagram the 6th embodiment of the invention；
Figure 14 is the profile of the light emission diode package member of diagram the 7th embodiment of the invention.
Symbol description
100：Light emission diode package member
110：Light-emitting diode chip for backlight unit 120：Lead frame
122：1st lead member 124：2nd lead member
130：Shell 132：1st reflecting surface
134：2nd reflecting surface 136：Groove
138：Upper surface 139：Next door
139a：1st inclined plane 139b：2nd inclined plane
139c：Vertical plane 140：Zener diode
150：Encapsulant h1, h2：1st region, the 2nd region
Embodiment
The light emission diode package member of one embodiment of the invention can include：Lead frame, it includes spaced apart from each other 1st lead member and the 2nd lead member；Shell, it supports described lead frame, including makes the 1st lead member and the 2nd draw The 1st region that a upper surface part more than any one in line part is exposed；And light-emitting diode chip for backlight unit, it is mounted on institute State the 1st region of shell；The shell can include the obliquely extended from outer lateral 1st area side of the shell 1 reflecting surface and the 1st lead member and the 2nd leading part for extending obliquely to expose in the 1st region from the 1st reflecting surface 2nd reflecting surface of the upper surface of any one in part, the angle of inclination of the 2nd reflecting surface can be more than the described 1st reflection The angle of inclination in face.
Moreover, the 2nd reflecting surface can include groove, its in order to carry out wire bonding to the light-emitting diode chip for backlight unit, Add the lead frame in the 1st region to expose.
In addition, the shell can also include the 2nd region, it is in order to light-emitting diode chip for backlight unit progress wire bonding And expose another the upper surface part in the 1st lead member and the 2nd lead member, it can also include Zener two Pole pipe, it is mounted on the 2nd region.
Furthermore it is possible to also include Zener diode, it is mounted on the lead frame and in the shell.
Moreover, the area in the 1st region can be the plane upper surface area of the light emission diode package member 10% to 30%.
Wherein, the height of the 2nd reflecting surface can be less than the height of the light-emitting diode chip for backlight unit.
The light-emitting diode chip for backlight unit can include：N-type semiconductor layer；P-type semiconductor layer；And partly led between the n-type Active layer between body layer and p-type semiconductor layer, the height of the 2nd reflecting surface can be less than the height of the active layer.
On the other hand, the light emission diode package member of one embodiment of the invention, it, can as light emission diode package member With including：Lead frame, it includes the 1st lead member and the 2nd lead member spaced apart from each other；Shell, it supports the lead Framework, including make that a upper surface part more than any one in 1st lead member and the 2nd lead member exposes 1 region；And light-emitting diode chip for backlight unit, it is mounted on the 1st region of the shell, and the shell can be from the outside of the shell Obliquely extend to the 1st area side, the area in the 1st region can be in the plane of the light emission diode package member The 10% to 30% of surface area.
Wherein, the shell can include obliquely extending from outer lateral 1st area side of the shell the 1st anti- Penetrate face and the 1st lead member and the 2nd lead member that extend obliquely to expose in the 1st region from the 1st reflecting surface In the upper surface of any one the 2nd reflecting surface, the angle of inclination of the 1st reflecting surface and the 2nd reflecting surface can mutual not phase Together.
Now, the height of the 2nd reflecting surface can be less than the height of the light-emitting diode chip for backlight unit.
Moreover, the light-emitting diode chip for backlight unit can include：N-type semiconductor layer；P-type semiconductor layer；And between the n-type Active layer between semiconductor layer and p-type semiconductor layer, now, the height of the 2nd reflecting surface can be less than the active layer Height.
With reference to the accompanying drawings, the preferred embodiments of the present invention are more particularly described.
Fig. 1 is the stereogram of the light emission diode package member of diagram the 1st embodiment of the invention, and Fig. 2 is the diagram present invention the 1st The top view of the light emission diode package member of embodiment, moreover, Fig. 3 is the profile along Fig. 2 intercepting line AA' interceptions.
As shown in Figures 1 and 2, the light emission diode package member 100 of the 1st embodiment of the invention includes light-emitting diode chip for backlight unit 110th, lead frame 120, shell 130 and Zener diode 140.
Light-emitting diode chip for backlight unit 110 possesses more than one, is configured on lead frame 120.In addition, supplied by means of outside Power supply, more than one light-emitting diode chip for backlight unit 110 can discharge light, and the light discharged from light-emitting diode chip for backlight unit 110 can be with It is discharged into outside.This light-emitting diode chip for backlight unit 110 is as shown in figure 3, including n-type semiconductor layer 116, active layer 114 and p-type half Conductor layer 112.
N-type semiconductor layer 116, active layer 114 and p-type semiconductor layer 112 can include the chemical combination of iii-v series respectively Thing semiconductor, as an example, such as (Al, Ga, In) N nitride-based semiconductor can be included.In the present embodiment, to The top of n-type semiconductor layer 116 formed with active layer 114, on the top of active layer 114, enter by the situation formed with p-type semiconductor layer 112 Row explanation, but as needed, the position of n-type semiconductor layer 116 and p-type semiconductor layer 112 can change.
N-type semiconductor layer 116 can include n-type impurity (for example, Si), and p-type semiconductor layer 112 can include p-type not Pure thing (for example, Mg).Active layer 114 can include Multiple-quantum between n-type semiconductor layer 116 and p-type semiconductor layer 112 Well structure (MQW).Moreover, for active layer 114, its ratio of components can be adjusted, so as to peak wavelength needed for discharging Light.
In the present embodiment, light-emitting diode chip for backlight unit 110 can include the p-type electricity for being electrically connected in p-type semiconductor layer 112 Pole and the n-type electrode for being electrically connected in n-type semiconductor layer 116.Although not limiting especially, an example, n-type electrode are used as Via (via) that can be by penetrating active layer 114 and p-type semiconductor layer 112 etc., is electrically connected in n-type semiconductor layer 116.
Lead frame 120 includes the 1st lead member 122 and the 2nd lead member 124, the 1st lead member 122 and the 2nd lead Part 124 is configured with state spaced apart from each other.Lead frame 120 is writing board shape, and upper surface and bottom surface can be flat.And And the 1st lead member 122 there is the area broader than the 2nd lead member 124, light-emitting diode chip for backlight unit 110 is mounted on relatively The 1st broad lead member 122.Lead frame 120 is equipped with to supply power supply to light-emitting diode chip for backlight unit 110, and luminous two Pole pipe chip 110 can be electrically connected with the 1st lead member 122 and the 2nd lead member 124 by means respectively of wire bonding.
In the present embodiment, lead frame 120 is as shown in figure 3, can have the top of side than shape that bottom is protruded. That is, the 1st lead member 122 and the 2nd lead member 124 can form step difference in side respectively, in the 1st lead member 122 and The step difference that the side of 2nd lead member 124 is formed can have the shape that top is protruded from side.Therefore, the 1st lead member 122 and the 2nd lead member 124 and the contact area of shell 130 increase, so as to improve adhesion.
In addition, as the side lower width of the 1st lead member 122 and the 2nd lead member 124 is less than side surface upper part, make The size of the 1st lead member 122 and the 2nd lead member 124 that the bottom of light emission diode package member 100 must be exposed to is possible to subtract It is small.Therefore, between the separating of the 1st lead member 122 and the 2nd lead member 124 that the bottom of light emission diode package member 100 is exposed Every widening, it when external device (ED) and 100 electrical bond of light emission diode package member, can draw the 1st lead member 122 and the 2nd The situation of the electric short circuit of line part 124 minimizes.
Shell 130 has surrounds the 1st lead member 122 and the shape of the sidepiece of the 2nd lead member 124 respectively, to support Lead frame 120.Therefore, the space that separates between the 1st lead member 122 and the 2nd lead member 124 is also filled up by shell 130, 1st lead member 122 and the 2nd lead member 124 can mutual electrical separations.Wherein, shell 130 is not drawn with covering the whole 1st The shape of the lead member 124 of line part 122 and the 2nd is formed, but with the upper surface part dew for making the 1st lead member 122 The shape gone out, according to the appearance and size and shape of shell 130, the size and shape of decision light emission diode package member 100.
Shell 130 have make on top the part of the 1st lead member 122 expose and completely encirclement the sidepiece of lead frame 120 Shape, thus be thicker than the thickness of lead frame 120.In addition, the 1st lead member 122 is got over from exposed area laterally, shell 130 thickness is possible to can be thicker.I.e., as shown in Figures 1 and 3, the upper side of shell 130 is in order to luminous in inner central configuration Diode chip for backlight unit 110 and formed with the 1st region h1 exposed for the 1st lead member 122, possess more to the outside of shell 130 more Acclivitous medial surface.
Now, the medial surface of shell 130 is formed with acclivitous inclined plane in outward direction, and it is anti-that inclined plane includes the 1st Penetrate the reflecting surface 134 of face 132 and the 2nd.1st reflecting surface 132 is from the outer upper end of shell 130, to inward side to tilting down landform Into the medial surface for occupying shell 130 is most of.
Wherein, in top view as shown in Figure 2, the 1st region h1 area can be light emission diode package member 100 The 10% to 30% of all areas.Then, the 1st region h1 area forms more to be less than light emission diode package member 100 complete Bulk area, the 1st reflecting surface 132 area shared in light emission diode package member 100 is possible to can be bigger, and the 1st reflecting surface 132 area is bigger, and the luminous efficiency of light emission diode package member 100 can be improved more.
Now, if the 1st region h1 area is more than the 30% of all areas of light emission diode package member 100, send out The luminous efficiency of optical diode packaging part 100 is possible to decline.In addition, if less than 10%, then luminous two can be mounted on The limited size of the light-emitting diode chip for backlight unit 110 of pole pipe packaging part 100 so that the usability meeting of light emission diode package member 100 Decline, and attachment light-emitting diode chip for backlight unit 110 can be made, carry out the space reduction of wire bonding, may hair in process Life is bad.Therefore, as described above, the 1st region h1 area is the 10% to 30% of 100 all areas of light emission diode package member Can be than advantageous.
Moreover, as described above, as the area of the reflecting surface 132 of light emission diode package member 100 is widened, the 1st region h1 Width it is relatively reduced, therefore, the 1st lead member 122 that the 1st region h1 exposes area reduce.So, with the 1st The area of lead member 122 reduces, compared with the past even if the 1st lead member 122 changes colour, the discoloration of the 1st lead member 122 Area reduces so that can be more preferable according to the luminous efficiency of the light emission diode package member 100 of the discoloration of the 1st lead member 122.
If in addition, as shown in Fig. 2 compare the 1st region h1 width and the width of the 1st reflecting surface 132, luminous two A direction in the plane of pole pipe packaging part 100, relative to the 1st region h1 width b1, the width b2 of the 1st reflecting surface 132 can To be about 33% to 133%.That is, in the state of the size of light emission diode package member 100 is set, the 1st region h1 area Can be different because of the size of light-emitting diode chip for backlight unit 110.Therefore, the area of the 1st reflecting surface 132 can also change, but in view of this The luminous efficiency of the light emission diode package member 100 of embodiment, the 1st region h1 width b1 and the 1st can be determined as described above The width b2 of reflecting surface 132 relation.
In the present embodiment, in the upper end of shell 130 formed with predetermined face, in the 1st reflecting surface 132 and shell 130 Step difference can be formed between upper surface.That is, the upper surface of shell 130 can be more slightly higher than the 1st reflecting surface 132 configure.With So form step difference between the 1st reflecting surface 132 and the upper surface of shell 130, when with covering luminousing diode chip 110 simultaneously When covering the mode of the 1st reflecting surface 132 formed with encapsulant, form to prevent encapsulant and cross the upper end of shell 130 Face and spill into outside.
Moreover, the inside end of the 1st reflecting surface 132 can be located at the top of the 1st lead member 122 so that with shell 130 The upper surface for the 1st lead member 122 that inner side is exposed forms step difference.That is, even if the 1st reflecting surface 132 is from the outside of shell 130 Upper end more more tilts to inner side, is also not extend in the upper surface of the 1st lead member 122 that the 1st region h1 exposes.
So, with the 1st reflecting surface 132 not with the upper surface of the 1st lead member 122 exposed in the 1st region h1, Compared to the situation of the 1st reflecting surface 132 and the upper surface of the 1st lead member 122, the 1st reflecting surface 132 can have relative The inclination releived.
Moreover, the 2nd reflecting surface 134 extends from the inside end of the 1st reflecting surface 132, can extend with the 1st region h1 The 1st lead member 122 exposed contacts.Now, the place that the 2nd reflecting surface 134 contacts with the 1st lead member 122 exposed, can To be separated both more than set a distance with the light-emitting diode chip for backlight unit 110 for being mounted on the 1st lead member 122 exposed.
In addition, in the interior lateral incline of shell 130, can in a part for the position that the 1st region h1 is formed formed with Groove 136.The part addition for making the 1st lead member 122 in the groove 136 that the 1st region h1 is formed is exposed, by means of groove 136 The position for the 1st lead member 122 exposed, can be with bonding wire.In the present embodiment, groove 136 is illustrated in figure in the 1st area The situation that domain h1 flanking central is formed, but groove 136 can be formed in the 1st region h1 angle side or other sides.
So, if groove 136 is configured at the 1st region h1 flanking central, it is electrically connected light-emitting diode chip for backlight unit 110 With the contraction in length of the metal wire of the 1st lead member 122, the light caused by metal wire can be reduced and disturbed.In addition, if groove 136 form in the 1st region h1 angle side, then can form groove 136 with less size, reduce with the size of groove 136, the 1st The area of reflecting surface 132 can increase, enabling improve the reflectivity of the luminous light of light-emitting diode chip for backlight unit 110.
Moreover, in the present embodiment, can be in the 1st reflecting surface 132 formed with the 2nd area exposed for the 2nd lead member 124 Domain h2.With the 2nd region h2 is formed, a upper surface part for the 2nd lead member 124 is exposed, and Zener diode 140 can mount In the upper surface for the 2nd lead member 124 exposed.In addition, the 2nd lead member 124 exposed in the 2nd region h2 can be by means of Wire bonding and be electrically connected with light-emitting diode chip for backlight unit 110.
The outfit of Zener diode 140 is to be used to prevent light-emitting diode chip for backlight unit 110 from may send out because of external power supply Raw electrostatic and sustain damage.In the present embodiment, zener diode 140 is mounted on the 2nd region h2 situation and illustrated, But as needed, Zener diode 140 can be located at the inside of shell 130 without being exposed to outside.In addition, Zener diode 140 can be mounted on any one place in the 1st lead member 122 and the 2nd lead member 124.
Now, any one of Zener diode 140 in the 1st lead member 122 and the 2nd lead member 124 is mounted on In the state of, it can be encapsulated by shell 130, and with by means of being formed resin of shell 130 etc. come the state to be completely covered It is packaged.If Zener diode 140 is so packaged in shell 130, Zener diode 140 is not exposed to outside, with The situation that Zener diode 140 is exposed to outside is compared, and the area of the 1st reflecting surface 132 can increase, it is possible to increase light emitting diode The luminous efficiency of packaging part 100.
Moreover, reference picture 3, the 1st reflecting surface 132 and the 2nd reflecting surface 134 are described in more detail.
As described above explanation, the 1st reflecting surface 132 from the outer upper end face of shell 130 formed step difference position, Formed with being sloped downwardly to the center of light emission diode package member 100.Moreover, from the inside end of the 1st reflecting surface 132 to the 1st The region h1 upper surface of the 1st lead member 122 is formed with the 2nd reflecting surface 134.Now, as shown in figure 3, the 1st reflecting surface 132 with 2nd reflecting surface 134 has mutually different angle of inclination, and the angle of inclination a of the 1st reflecting surface 132 can be less than the 2nd reflecting surface 134 angle of inclination b (a<b).
So, as the 2nd relatively large angle of inclination b reflecting surface 134 is in the inside end shape of the 1st reflecting surface 132 Into the 1st region h1 size can be ensured to the maximum limit.Now, the angle of inclination b of the 2nd reflecting surface 134 can have 45 degree To 90 degree of angles (45≤b≤90).Therefore, with the 1st reflecting surface 132 with same tilt angle a extend and with the 1st lead member The situation of 122 contacts is compared, and with the 2nd reflecting surface 134 is formed, the 1st region h1 width relative can be widened, therefore, to patch The free degree of the size of light-emitting diode chip for backlight unit 110 loaded on the 1st region h1 can be increased further.
Now, if the angle of inclination of the 2nd reflecting surface 134 is less than 45 degree, light-emitting diodes can be mounted in the 1st region h1 The space of die 110 accordingly reduces, it is difficult to ensures to mount the space of process and for lead for light-emitting diode chip for backlight unit 110 The space of bonding.
In addition, the inside end of the 1st reflecting surface 132 and the distance of the upper surface of the 1st lead member 122, i.e. the 2nd reflecting surface 134 height d1 can be less than the thickness d 3 of light-emitting diode chip for backlight unit 110, it is highly preferred that can be less than the 1st lead member 122 Upper surface to light-emitting diode chip for backlight unit 110 active layer 114 distance d2 (d1<d2<d3).That is, the inner side of the 1st reflecting surface 132 The height d1 of terminal position can be located at the position of the height d3 less than light-emitting diode chip for backlight unit 110, can be less than n-type semiconductor The height d2 of layer 116, so that the light to be lighted from light-emitting diode chip for backlight unit 110 can reflect in the 1st reflecting surface 132.Wherein, the 2nd The height d1 of reflecting surface can be 50 μm to 300 μm.
Wherein, because light occurs for the active layer 114 of light-emitting diode chip for backlight unit 110 and discharges, therefore, if the 2nd reflecting surface 134 inside end height d1 is in the position higher than the position d2 of active layer 114, then the light to be lighted from active layer 114 is anti-the 2nd The situation for penetrating the reflection of face 134 increases, thus the luminous efficiency of light emission diode package member 100 can decline.Because the 2nd reflection The angle of inclination of face 134 is more than the 1st reflecting surface 132, thus the reflection efficiency of the 2nd reflecting surface 134 can be more anti-than the 1st reflecting surface 132 Penetrate efficiency decline.
Fig. 4 is the stereogram of the light emission diode package member of diagram the 2nd embodiment of the invention, and Fig. 5 is the diagram present invention the 2nd The top view of the light emission diode package member of embodiment.Moreover, Fig. 6 is to be along the profile of Fig. 2 intercepting line AA' interceptions, Fig. 7 The light emission diode package member of diagram the 2nd embodiment of the invention includes the exemplary plot of the situation of encapsulant.
If reference picture 4 and Fig. 5, the light emission diode package member 100 of the 2nd embodiment of the invention includes light-emitting diodes tube core Piece 110, lead frame 120, shell 130 and Zener diode 140.To the light emission diode package member of the 2nd embodiment of the invention Illustrate, illustrate to omit with the 1st embodiment identical.
In the present embodiment, in the upper end of shell 130 formed with predetermined face, as shown in figure 5, the 1st reflecting surface 132 with Step difference a1 can be formed between the upper surface 138 of shell 130.That is, the upper surface 138 of shell 130 can be arranged to a little higher than 1st reflecting surface 132.
In the present embodiment, light emission diode package member 100 is as shown in fig. 7, can also include encapsulant 150.Sealing Material 150 can be formed with resin or silicon, can be with the reflecting surface 132 of covering luminousing diode chip 110 and the 1st and the 2nd reflecting surface 134 ground are formed.Now, encapsulant 150 can utilize the encapsulant 150 of liquid in the fabrication process, can be by liquid Encapsulant 150 hardens formation in the state of filling the inner side of shell 130.In the reflecting surface 132 of upper surface 138 and the 1st of shell 130 Between form step difference a1, it is thus possible to prevent in the process, the encapsulant 150 of liquid is in covering luminousing diode chip The outside of shell 130 is spilt into during 110 and the 1st reflecting surface 132 and the 2nd reflecting surface 134.
That is, the formation step difference a1 between the 1st reflecting surface 132 and the upper surface 138 of shell 130, thus as shown in fig. 7, When covering the ground of the 1st reflecting surface 132 formation encapsulant 150 while covering luminousing diode chip 110, it can prevent from sealing Material 150 crosses the upper surface 138 of shell 130 and spills into outside formation.
Referring again to Fig. 5, the upper surface 138 of shell 130 is further described.Bowing the upper surface 138 of shell 130 On view to be formed in a manner of the most gabarit of light emission diode package member 100, upper surface 138 determines the 1st reflecting surface 132 Outline shape.Therefore, as illustrated, the profile of upper surface 138 is rectangular shape, the internal profile of upper surface 138 has straight line The shape that the side of shape and the angle side of curve shape mutually extend.That is, the internal profile of upper surface 138 can have similar to ellipse Circular shape.
In the present embodiment, the width of the upper surface 138 of shell 130 can be because of position and different.In other words, luminous two The width w1 of upper surface 138 of the side of pole pipe packaging part 100 can be with different with the width w2 of upper surface 138 in angle side, angle side The width w2 of upper surface 138 can be more than side the width w1 of upper surface 138.That is, the internal profile in upper surface 138 has straight line The position of shape, the width w1 of upper surface 138 have given width, have the position of curve shape in internal profile, with upper surface The width w2 of 138 profiles more can be bigger to angle side, width.Now, the Breadth Maximum of the 138 jiaos of sides in upper surface of shell 130 W2 can be about 3 times to 7 times compared with lateral width w1.
So, with shell 130 the width of upper surface 138 by from side Yue Xiangjiao sides it is bigger in a manner of formed, making In the process for making light emission diode package member 100, the situation collided between such as light emission diode package member 100, even if to hair Optical diode packaging part 100 applies external force, and the bad situations such as the rupture of generation shell 130 can also realized and minimizes.
Wherein, if the Breadth Maximum w2 of 138 jiaos of the upper surface side of shell 130 is smaller than lateral width w1 3 times, then, when When volume production or transport light emission diode package member 100, shell 130 is because mutually colliding or conflicting and damaged danger with other equipments It is high.In addition, if more than 7 times, then the width w2 of angle side is wide, thus the area of reflecting surface 132 is relatively reduced, therefore, lights The luminous efficiency of diode encapsulating parts 100 can decline.
In addition, in the present embodiment, the situation for having four edges to light emission diode package member 100 illustrates.Now, In the present embodiment, from positioned at four edges the side of upper surface 138 extension at least two sides the width of reflecting surface 132, it is and corresponding The width of upper surface 138 is compared, and can be 4 times to 7 times.So, if the width of reflecting surface 132 is than corresponding upper surface 138 Width is less than 4 times, then, the width of upper surface 138 is relative to be widened, and the width of reflecting surface 132 diminishes so that under reflection efficiency Drop.In addition, if more than 7 times, then the width of reflecting surface 132 is excessive, it is difficult to substantially ensures that as attachment light-emitting diode chip for backlight unit 1st region h1 of 110 desired zones width, thus can make attachment light-emitting diode chip for backlight unit 110 go forward side by side line lead bonding work Sequence declines.
Fig. 8 is the stereogram of the light emission diode package member of diagram the 3rd embodiment of the invention, and Fig. 9 is the diagram present invention the 3rd The top view of the light emission diode package member of embodiment.Moreover, Figure 10 is the profile along Fig. 2 intercepting line AA' interceptions.
If reference picture 8 and Fig. 9, the light emission diode package member 100 of the 3rd embodiment of the invention includes light-emitting diodes tube core Piece 110, lead frame 120, shell 130 and Zener diode 140.To the light emission diode package member of the 3rd embodiment of the invention Illustrate, omitted with the 1st embodiment and the 2nd embodiment identical explanation.
In the present embodiment, the 2nd region h2 exposed for the 2nd lead member 124 is could be formed with the 1st reflecting surface 132. 2nd region h2, which is formed, must expose a upper surface part for the 2nd lead member 124, and Zener diode 140, which can be mounted on, to be exposed The 2nd lead member 124 upper surface.Moreover, can be by means of lead key in the 2nd region h2 the 2nd lead member 124 exposed Close and be electrically connected with light-emitting diode chip for backlight unit 110.
As set forth above, it is possible to the shell 130 between the 1st region h1 and the 2nd region h2 is defined as next door 139.Every Wall 139 is configured between the 1st lead member 122 and the 2nd lead member 124, to make the 1st lead member 122 and the 2nd leading part The electric insulation of part 124, as shown in Fig. 8 to Figure 10, have that portion is convex more up than the 1st lead member 122 and the 2nd lead member 124 The shape gone out.The upper surface in next door 139 has to inclined 2nd reflecting surface 134 in the 1st region h1 sides and anti-from the 2nd in the top Penetrate the 1st reflecting surface 132 of the extension of face 134.Moreover, on the basis of the 1st reflecting surface 132, can be in the opposite of the 2nd reflecting surface 134 Side has the 2nd inclined plane 139b.
Wherein, the height in next door 139 can be more than the height of Zener diode 140.Therefore, from light-emitting diode chip for backlight unit 110 luminous light can not direct irradiation Zener diode 140 by means of next door 139.
2nd inclined plane 139b from the 1st reflecting surface 132 towards the 2nd lead member 124 exposed in the 2nd region h2 obliquely Formed, the 2nd inclined plane 139b can not be contacted or contacted with the 2nd lead member 124.That is, the 2nd inclined plane 139b can be with the 2nd 134 inclined gradient of reflecting surface is opposite.
So, as the 2nd inclined plane 139b is formed, the 2nd region h2 upper space can be widened, therefore, luminous two Pole pipe chip 110 and the 2nd lead member 124 exposed by means of the 2nd region h2 when being bonded by means of metal wire from It can be increased by degree.
Wire bonding realizes in a manner of being bonded so that metal wire printed downwards from top in the position of wire bonding, herein mistake Cheng Zhong, although the 2nd region h2 area can also have an impact to process, due in wire bonding sequence characteristic, the 2nd area Domain h2 upper space can also have an impact.That is, with the 2nd inclined plane 139b is formed in the 2nd region h2, for wire bonding Device can move freely through from the 2nd region h2 tops to the 1st region h1 sides.
In addition, with the 2nd inclined plane 139b is formed in the 2nd region h2, as shown in figure 1, in the 1st region h1 and the 2nd region The length for the metal wire that h2 is bonded respectively can shorten, and can reduce the light caused by metal wire and disturb.
Moreover, as shown in Figure 10, the 2nd inclined plane 139b can have two inclined planes, be not limited to this, can have One inclined plane, there can be more inclined planes.In addition, the 2nd inclined plane 139b is not formed on section with straight line, but can be with It is formed in curved lines.That is, the 2nd inclined plane 139b can be formed with curved surface.
In the 2nd region h2, can with the opposite face formed with the 2nd inclined plane 139b formed with the 1st inclined plane 139a.1st inclined plane 139a is from the 1st reflecting surface 132 positioned at the 2nd region h2 lateral directions to the direction of the 2nd lead member 124 The face tilted down.So, with the 1st inclined plane 139a is formed, the light to be lighted from light-emitting diode chip for backlight unit 110 can be the 1 inclined plane 139a is reflected, and reflexes to top and the release of light emission diode package member 100.Therefore, the 1st inclined plane 139a It can be made up of reflecting surface.
Further, when the light reflected from the 1st inclined plane 139a is towards the 2nd inclined plane 139b, the 2nd inclined plane 139b It can be made up of reflecting surface, to be reflected again in the 2nd inclined plane 139b, so as to be released to light emission diode package member 100 top.
Now, the 1st inclined plane 139a and the 2nd inclined plane 139b is respectively compared with the 1st reflecting surface 132, and angle of inclination can be with It is relatively bigger.In addition, as needed, the 1st inclined plane and the 2nd inclined plane can include more than two inclined planes respectively.So Ground, as the 1st inclined plane and the 2nd inclined plane include more than two inclined planes respectively, can more efficiently it reflect from luminous two The light of pole pipe chip light emitting.
As described above, with the 1st inclined plane 139a and the 2nd inclined plane 139b is formed, may be advantageous to assure that for the 2nd Region h2 mounts the space of Zener diode 140.
Figure 11 is the profile of the light emission diode package member of diagram the 4th embodiment of the invention.
If reference picture 11, the light emission diode package member 100 of the 4th embodiment of the invention includes light-emitting diode chip for backlight unit 110th, lead frame 120, shell 130 and Zener diode 140.To the light emission diode package member 100 of the 4th embodiment of the invention Illustrate, illustrate to omit with the 1st embodiment to the 3rd embodiment identical.
In the present embodiment, next door 139 has that portion protrudes more up than the 1st lead member 122 and the 2nd lead member 124 Shape.Moreover, the upper surface 132a in next door 139 has the upper surface with the 1st lead member 122 and the 2nd lead member 124 Face parallel 132a.In the upper surface 132a in next door 139 side and the 3rd embodiment, the 2nd reflecting surface could be formed with 134, opposite side could be formed with the 2nd inclined plane 139b.
Figure 12 is the profile of the light emission diode package member of diagram the 5th embodiment of the invention.
If reference picture 12, the light emission diode package member 100 of the 5th embodiment of the invention includes light-emitting diode chip for backlight unit 110th, lead frame 120, shell 130 and Zener diode 140.To the light emission diode package member 100 of the 5th embodiment of the invention Illustrate, illustrate to omit with the 1st embodiment to the 3rd embodiment identical.
In the present embodiment, next door 139 has that portion protrudes more up than the 1st lead member 122 and the 2nd lead member 124 Shape.Moreover, the upper surface in next door 139 has to inclined 2nd reflecting surface 134 in the 1st region h1 sides and in the top from the 2nd The 1st reflecting surface 132 that reflecting surface 134 extends.Moreover, on the basis of the 1st reflecting surface 132, in the opposite side of the 2nd reflecting surface 134 There can be vertical plane 139c.Now, vertical plane 139c is along the face formed perpendicular to the direction of the 2nd lead member 124.
In the present embodiment, as next door 139 has vertical plane 139c, due to the 1st reflecting surface 132 positioned at the top Area is possible to increase, the area increase that the luminous light of light-emitting diode chip for backlight unit 110 can reflect, it is possible to increase light emitting diode The luminous efficiency of packaging part 100.
Figure 13 is the profile of the light emission diode package member of diagram the 6th embodiment of the invention.
If reference picture 13, the light emission diode package member 100 of the 6th embodiment of the invention includes light-emitting diode chip for backlight unit 110th, lead frame 120, shell 130 and Zener diode 140.To the light emission diode package member 100 of the 6th embodiment of the invention Illustrate, illustrate to omit with the 1st embodiment to the 3rd embodiment identical.
In the present embodiment, next door 139 has that portion protrudes more up than the 1st lead member 122 and the 2nd lead member 124 Shape.Moreover, the side in next door 139 can have to the 1st inclined 2nd reflecting surface 134 in region h1 sides, opposite side can be The opposite side of 2nd reflecting surface 134 has the 2nd inclined plane 139b.2nd inclined plane 139b tilts to the 2nd region h2.Therefore, next door 139 the top can have sharp shape by means of the 2nd reflecting surface 134 and the 2nd inclined plane 139b.
Due to the shape in this next door 139, the 2nd inclined plane 139b angle can have relatively compared with the 3rd embodiment The inclination releived, therefore, the 2nd region h2 upper space can increase, therefore, to the freedom of the 2nd region h2 wire bonding Degree can increase.In addition, the 2nd inclined plane 139b inclination is releived, the light reflected from the 1st inclined plane 139a is in the 2nd inclined plane 139b is reflected and is discharged into the relative rise of situation on the top of light emission diode package member 100 again, it is thus possible to is improved luminous The luminous efficiency of diode encapsulating parts 100.
Figure 14 is the profile of the light emission diode package member of diagram the 7th embodiment of the invention.
If reference picture 14, the light emission diode package member 100 of the 7th embodiment of the invention includes light-emitting diode chip for backlight unit 110th, lead frame 120, shell 130 and Zener diode 140.To the light emission diode package member 100 of the 7th embodiment of the invention Illustrate, illustrate to omit with the 1st embodiment to the 3rd embodiment identical.
In the present embodiment, next door 139 has that portion protrudes more up than the 1st lead member 122 and the 2nd lead member 124 Shape.Moreover, the side in next door 139 can have to the 1st inclined 2nd reflecting surface 134 in region h1 sides, opposite side can be The opposite side of 2nd reflecting surface 134 has vertical plane 139c.Vertical plane 139c is along the direction shape perpendicular to the 2nd lead member 124 Into face.Therefore, the top in next door 139 can have sharp shape by means of the 2nd reflecting surface 134 and vertical plane 139c Shape.
So, in the present embodiment, as next door 139 has the 2nd reflecting surface 134 and vertical plane 139c, next door 139 The 2nd reflecting surface 134 formed can have than from (the 2nd reflection directly extended from the 1st reflecting surface 132 of other the 2nd reflecting surface Face 134) inclination more releived.Therefore, the light to be lighted from light-emitting diode chip for backlight unit 110 is reflected from the 2nd reflecting surface 134, is made Obtaining relative can improve the luminous efficiency discharged to the top of light emission diode package member 100.
Such as explanation made above, according to embodiment referring to the drawings, the present invention is illustrated, but the reality It is that the preferred exemplary for enumerating the present invention illustrates to apply example, thus must not be interpreted as the present invention and be confined to the embodiment, The present invention is interpreted as technical scheme and its equivalent concepts.

Claims (16)

  1. A kind of 1. light emission diode package member, it is characterised in that including：
    Lead frame, it includes the 1st lead member and the 2nd lead member spaced apart from each other；
    Shell, it supports described lead frame, including make in the 1st lead member and the 2nd lead member any one with On the 1st region exposed of a upper surface part；And
    Light-emitting diode chip for backlight unit, it is mounted on the 1st region of the shell；
    The shell also includes the 1st reflecting surface and the 2nd reflecting surface, the 1st reflecting surface from the shell the outer lateral described 1st Area side obliquely extends, and the 2nd reflecting surface extends obliquely to what is exposed in the 1st region from the 1st reflecting surface The upper surface of any one in 1st lead member and the 2nd lead member,
    The angle of inclination of 2nd reflecting surface is more than the angle of inclination of the 1st reflecting surface.
  2. 2. light emission diode package member according to claim 1, it is characterised in that
    The angle of inclination of 2nd reflecting surface is 45 degree to 90 degree.
  3. 3. light emission diode package member according to claim 1, it is characterised in that
    2nd reflecting surface is included in the groove that the lead frame is further exposed in the 1st region, and the groove is used for described Light-emitting diode chip for backlight unit carries out wire bonding.
  4. 4. light emission diode package member according to claim 1, it is characterised in that also include：
    The height of 2nd reflecting surface is less than the height of the light-emitting diode chip for backlight unit.
  5. 5. light emission diode package member according to claim 1, the light-emitting diode chip for backlight unit includes：
    N-type semiconductor layer；
    P-type semiconductor layer；And
    Active layer between the n-type semiconductor layer and p-type semiconductor layer,
    The height of 2nd reflecting surface is less than the height of the active layer.
  6. A kind of 6. light emission diode package member, it is characterised in that including：
    Lead frame, it includes the 1st lead member and the 2nd lead member spaced apart from each other；
    Shell, it supports described lead frame, including make in the 1st lead member and the 2nd lead member any one with On the 1st region exposed of a upper surface part；And
    Light-emitting diode chip for backlight unit, it is mounted on the 1st region of the shell,
    The shell includes being formed at the upper surface of upper end and outer lateral 1st area side from the shell obliquely extends Reflecting surface,
    Step difference is formed between the upper surface and the reflecting surface.
  7. 7. light emission diode package member according to claim 6, it is characterised in that
    The upper surface of the shell includes：Internal profile comprising the 1st straight line and curve and the profile for including the 2nd straight line.
  8. 8. light emission diode package member according to claim 6, it is characterised in that
    In the upper surface of the shell, the width of the side of the housing and the width of turning side are different from each other.
  9. A kind of 9. light emission diode package member, it is characterised in that including：
    Lead frame, it includes the 1st lead member and the 2nd lead member spaced apart from each other；
    Shell, it supports described lead frame, including make in the 1st lead member and the 2nd lead member any one The 1st region and make another the upper surface one in the 1st lead member and the 2nd lead member that a upper surface part is exposed The 2nd region that part is exposed；And
    Light-emitting diode chip for backlight unit, it is mounted on the 1st region of the shell,
    The shell includes：Reflecting surface, obliquely extend in outer lateral 1st area side of the shell；Inclined plane, from institute State reflecting surface and obliquely run out to another in the 1st lead member and the 2nd lead member exposed in the 2nd region Upper surface.
  10. 10. light emission diode package member according to claim 9, it is characterised in that
    2nd region is surrounded by the reflecting surface.
  11. 11. light emission diode package member according to claim 10, it is characterised in that
    The inclined plane includes：1st inclined plane, from reflection positioned at the 1st area side towards exposing in the 2nd region Another upper surface in 1st lead member and the 2nd lead member is formed obliquely.
  12. 12. light emission diode package member according to claim 11, it is characterised in that
    The incline direction of 1st inclined plane and the incline direction of the reflecting surface are opposite each other.
  13. 13. light emission diode package member according to claim 10, it is characterised in that
    The inclined plane includes：2nd inclined plane, expose from the reflection positioned at the outside of the shell towards in the 2nd region The 1st lead member and the 2nd lead member in another upper surface be formed obliquely.
  14. 14. light emission diode package member according to claim 13, it is characterised in that
    The angle of inclination of 2nd inclined plane is more than the angle of inclination of the reflecting surface.
  15. 15. light emission diode package member according to claim 9, it is characterised in that also include：
    It is mounted on the Zener diode in the 2nd region.
  16. 16. light emission diode package member according to claim 15, it is characterised in that
    The attachment bread that the thickness of the Zener diode is less than in the Zener diode encloses the reflecting surface in the 2nd region The height of 2nd area side end.
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