KR20180000976A - Light emitting diode package - Google Patents

Abstract

The present invention relates to a light emitting diode package comprising: a lead frame including first and second lead members spaced from each other; a housing supporting the lead frame and including a first area exposing a part of an upper surface of at least one of the first and second lead members; and a light emitting diode chip mounted on the first area of the housing, wherein the housing includes a first reflective surface extending from the outside of the housing toward the first area, and a second reflective surface extending from the first reflective surface to an upper surface of any one of the first and second lead members exposed to the first area. The inclination angle of the second reflective surface is greater than the inclination angle of the first reflective surface. According to the present invention, it is possible to increase the light emitting efficiency of the light emitting diode package by gently forming the inclination angle of an inner wall of the housing of the light emitting diode package.

Description

[0001] LIGHT EMITTING DIODE PACKAGE [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting diode package, and more particularly, to a light emitting diode package having a reflection surface on a housing.

Light emitting diodes are inorganic semiconductor devices that emit light generated by recombination of electrons and holes to the outside and are used in various fields such as displays, automobile lamps, and general lighting in recent years. Such a light emitting diode has a long lifetime, low power consumption, and a high response speed. Accordingly, a light emitting device used in a light emitting diode has been used as a light source in various fields.

The conventional light emitting diode package is packaged by the housing with the light emitting diode chip disposed on the lead frame. And the inner wall of the housing has a predetermined angle so that light emitted from the light emitting diode chip can be reflected from the inner wall of the packaged housing.

At this time, a wire can be used for electrical connection between the light emitting diode chip and the lead frame. In order to wire-bond the light emitting diode chip, it is necessary that a certain space is formed between the light emitting diode chip and the inner wall of the housing. However, in order to secure a space in which the LED chip is mounted in a state where the size of the housing is constant, the inner wall of the housing must be formed to be close to vertical, and thus the inner wall of the housing does not play a large role as a reflecting surface have.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting diode package which can increase the luminous efficiency through reflection on the inner wall of the housing.

The present invention provides a lead frame comprising: a lead frame including first and second lead members spaced from each other; A housing including a first region for supporting the lead frame and exposing a part of a top surface of at least one of the first and second lead members; And a light emitting diode chip mounted on the first region of the housing, the housing including a first reflective surface extending obliquely from the outside of the housing toward the first region, and a second reflective surface extending from the first reflective surface to the first region, And a second reflective surface extending obliquely to an upper surface of one of the first and second lead members, wherein the inclination angle of the second reflective surface is larger than the inclination angle of the first reflective surface .

According to another aspect of the present invention, there is provided a light emitting diode package comprising: a lead frame including first and second lead members spaced from each other; A housing including a first region for supporting the lead frame and exposing a part of a top surface of at least one of the first and second lead members; And a light emitting diode chip mounted on a first region of the housing, wherein the housing extends obliquely from the outside of the housing toward the first region, and the area of the first region is larger than the area of the planar area of the light emitting diode package To 10% to 30%.

According to another aspect of the present invention, there is provided a lead frame comprising: a lead frame including first and second lead members spaced from each other; A housing including a first region for supporting the lead frame and exposing a part of a top surface of at least one of the first and second lead members; And a light emitting diode chip mounted on a first region of the housing, the housing including a top surface formed at an upper end thereof and a reflecting surface extending obliquely from the outside of the housing toward the first region side, A light emitting diode package is provided with a step between reflective surfaces.

According to another aspect of the present invention, there is provided a lead frame comprising: a lead frame including first and second lead members spaced from each other; And a second region for supporting the lead frame and exposing a part of a top surface of the other of the first and second lead members and a first region for exposing a part of a top surface of any one of the first and second lead members ; And a light emitting diode chip mounted on the first region of the housing, the housing including a reflective surface extending obliquely from the outside of the housing toward the first region, And an inclined surface extending obliquely to an upper surface of the other of the second lead members.

According to the present invention, since the inclination angle of the inner wall of the housing of the light emitting diode package is gently formed, the light emitting efficiency of the light emitting diode package can be increased.

As described above, in order to increase the luminous efficiency of the light emitting diode package, the inclined angle of the inner wall of the housing is gently formed to prevent the size of the exposed region of the lead frame, which can mount the light emitting diode chip, from being reduced, It is possible to prevent the size of the exposed region of the lead frame from being reduced by making the tilt angle of the second reflection surface larger than the tilt angle of the first reflection surface.

In addition, by increasing the angle of inclination of the inner wall end of the housing, which is the reflecting surface, the space in which the light emitting diode chip can be mounted can be maximized. In addition, the light reflected from the end of the housing can be emitted to the outside so that the angle of the end of the inner wall of the housing is 90 or less, thereby enhancing the luminous efficiency of the light emitting diode package.

Since the upper surface of the housing has a predetermined width and protrudes to have a step with the reflecting surface, it is possible to prevent the sealing material from overflowing to the outside of the housing in the process of filling the sealing material inside the housing.

Furthermore, it is possible to prevent a problem such as cracking of the housing even if an external impact occurs in the manufacturing process by making the edge side width larger than the side width of the upper surface of the housing. Further, the corner top surface of the housing has a curved shape and the shape of the reflecting surface has a curved shape, so that the efficiency of the light emitted from the LED chip is reflected by the reflecting surface on the corner side.

In addition, since the second region is formed in the housing to expose the second lead member, the housing protrudes upwardly between the first region and the second region, so that the light emitted from the LED chip does not directly contact the Zener diode There is an effect that the light loss due to the zener diode can be minimized.

The upper surface of the partition located between the first region and the second region includes a first reflective surface, a second reflective surface, and a second inclined surface, and the second inclined surface is inclined downward from the second reflective surface toward the second region The process of wire bonding the zener diode to the first lead member of the first region is easy and the length of the wire is shortened to reduce the optical interference caused by the wire.

1 is a perspective view illustrating a light emitting diode package according to a first embodiment of the present invention.
2 is a plan view showing a light emitting diode package according to a first embodiment of the present invention.
3 is a cross-sectional view taken along the tear line AA 'of FIG.
4 is a perspective view illustrating a light emitting diode package according to a second embodiment of the present invention.
5 is a plan view illustrating a light emitting diode package according to a second embodiment of the present invention.
6 is a cross-sectional view taken along the tear line AA 'of FIG.
7 is an exemplary view showing an encapsulant included in the light emitting diode package according to the second embodiment of the present invention.
8 is a perspective view illustrating a light emitting diode package according to a third embodiment of the present invention.
9 is a plan view showing a light emitting diode package according to a third embodiment of the present invention.
10 is a cross-sectional view taken along the tear line AA 'of FIG.
11 is a cross-sectional view illustrating a light emitting diode package according to a fourth embodiment of the present invention.
12 is a cross-sectional view illustrating a light emitting diode package according to a fifth embodiment of the present invention.
13 is a cross-sectional view illustrating a light emitting diode package according to a sixth embodiment of the present invention.
14 is a cross-sectional view illustrating a light emitting diode package according to a seventh embodiment of the present invention.

According to an aspect of the present invention, there is provided a light emitting diode package including: a lead frame including first and second lead members spaced apart from each other; A housing including a first region for supporting the lead frame and exposing a part of a top surface of at least one of the first and second lead members; And a light emitting diode chip mounted on the first region of the housing, the housing including a first reflective surface extending obliquely from the outside of the housing toward the first region, and a second reflective surface extending from the first reflective surface to the first region, And a second reflective surface extending obliquely to an upper surface of any one of the first and second lead members. The inclination angle of the second reflective surface may be larger than the inclination angle of the first reflective surface.

The second reflective surface may include a groove for further exposing the lead frame to the first region for wire bonding the light emitting diode chip.

The housing may further include a second region for exposing a portion of a top surface of the other of the first and second lead members to wire-bond the LED chip, and the zener diode As shown in FIG.

Or a zener diode mounted on the lead frame and located in the housing.

The area of the first region may be 10% to 30% of the planar area of the light emitting diode package.

Here, the height of the second reflection surface may be lower than the height of the LED chip.

The light emitting diode chip includes: an n-type semiconductor layer; a p-type semiconductor layer; And an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, and the height of the second reflection surface may be lower than the height of the active layer.

According to another aspect of the present invention, there is provided a light emitting diode package comprising: a lead frame including first and second lead members spaced apart from each other; A housing including a first region for supporting the lead frame and exposing a part of a top surface of at least one of the first and second lead members; And a light emitting diode chip mounted on a first region of the housing, wherein the housing extends obliquely from the outside of the housing toward the first region, and the area of the first region is larger than the area of the planar area of the light emitting diode package 10% to 30%.

Here, the housing may be inclined to a top surface of one of the first and second lead members exposed at the first region on the first reflecting surface, and a second reflecting surface extending obliquely from the outside of the housing toward the first region side And an inclined angle of the first reflection surface may be different from that of the second reflection surface.

At this time, the height of the second reflection surface may be lower than the height of the LED chip.

The light emitting diode chip includes: an n-type semiconductor layer; a p-type semiconductor layer; And an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a height of the second reflection surface may be lower than a height of the active layer.

According to another aspect of the present invention, there is provided a light emitting diode package including: a lead frame including first and second lead members spaced from each other; A housing including a first region for supporting the lead frame and exposing a part of a top surface of at least one of the first and second lead members; And a light emitting diode chip mounted on a first region of the housing, the housing including a top surface formed at an upper end thereof and a reflecting surface extending obliquely from the outside of the housing toward the first region side, A step may be formed between the reflecting surfaces.

And the top surface of the housing may include an outline comprising a first straight line and a contour line comprising a curve and a second straight line.

The top surface of the housing may have a width at the side of the housing and a width at the edge of the housing.

Here, the width of the corner side may be 3 to 7 times the width of the side surface side.

The housing may further include a second region exposing a top surface portion of the other one of the first and second lead members for bonding the light emitting diode chip.

Here, a zener diode may be further included in the second region.

Or a zener diode mounted on the lead frame and located in the housing.

The light emitting diode chip may include an n-type semiconductor layer; a p-type semiconductor layer; And an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, and may further include an encapsulant covering the first region and the reflective surface.

The housing has two or more sides, and the width of the reflecting surface located at the two or more sides may be four to seven times the width of the top surface adjacent to the reflecting surface.

According to another aspect of the present invention, there is provided a light emitting diode package including: a lead frame including first and second lead members spaced from each other; And a second region for supporting the lead frame and exposing a part of a top surface of the other of the first and second lead members and a first region for exposing a part of a top surface of any one of the first and second lead members ; And a light emitting diode chip mounted on the first region of the housing, the housing including a reflective surface extending obliquely from the outside of the housing toward the first region, And an inclined surface extending obliquely to the upper surface of the other one of the second lead members.

Here, the second region may be surrounded by the reflective surface.

The inclined surface may include a first inclined surface inclined to the upper surface of the other one of the first and second lead members exposed in the second region in the reflective surface located on the first region side.

Here, the first inclined surface may be different from the reflective surface in the inclined direction, and the first inclined surface may be a reflective surface.

The inclined surface may include a second inclined surface inclined to the upper surface of the other one of the first and second lead members exposed in the second region on the reflective surface located outside the housing, The inclination angle may be larger than the reflection surface. Here, the second inclined surface may be a reflective surface.

The Zener diode may further include a Zener diode mounted on the second region. The thickness of the Zener diode may be smaller than a height of a second region side end of the reflective surface surrounding the second region in the mounting view of the Zener diode .

 Preferred embodiments of the present invention will be described more specifically with reference to the accompanying drawings.

FIG. 1 is a perspective view illustrating a light emitting diode package according to a first embodiment of the present invention, and FIG. 2 is a plan view illustrating a light emitting diode package according to a first embodiment of the present invention. And Fig. 3 is a cross-sectional view taken along the tear line AA 'of Fig.

1 and 2, a light emitting diode package 100 according to a first embodiment of the present invention includes a light emitting diode chip 110, a lead frame 120, a housing 130, and a zener diode 140 ).

One or more light emitting diode chips 110 are provided and disposed on the lead frame 120. In addition, one or more light emitting diode chips 110 can emit light by an external power source, and light emitted from the light emitting diode chip 110 can be emitted to the outside. The light emitting diode chip 110 includes an n-type semiconductor layer 116, an active layer 114, and a p-type semiconductor layer 112, as shown in FIG.

The n-type semiconductor layer 116, the active layer 114, and the p-type semiconductor layer 112 may each include a III-V compound semiconductor. For example, a nitride such as (Al, Ga, Semiconductor. Although the active layer 114 is formed on the n-type semiconductor layer 116 and the p-type semiconductor layer 112 is formed on the active layer 114 in this embodiment, the n-type semiconductor layer 116 And the position of the p-type semiconductor layer 112 may be changed.

The n-type semiconductor layer 116 may include an n-type impurity (for example, Si), and the p-type semiconductor layer 112 may include a p-type impurity (for example, Mg). The active layer 114 is interposed between the n-type semiconductor layer 116 and the p-type semiconductor layer 112 and may include a multiple quantum well structure (MQW). The composition of the active layer 114 can be adjusted so as to emit light having a desired peak wavelength.

In this embodiment, the LED chip 110 may include a p-type electrode electrically connected to the p-type semiconductor layer 112 and an n-type electrode electrically connected to the n-type semiconductor layer 116. For example, the n-type electrode may be electrically connected to the n-type semiconductor layer 116 via a via or the like that penetrates the active layer 114 and the p-type semiconductor layer 112, though not particularly limited.

The lead frame 120 includes first and second lead members 122 and 124 and the first and second lead members 122 and 124 are spaced apart from each other. The lead frame 120 may have a flat shape and both the top surface and the bottom surface may be flat. The first lead member 122 has a wider area than the second lead member 124 and the light emitting diode chip 110 is mounted on the relatively large first lead member 122. The lead frame 120 is provided to supply power to the LED chip 110 and the LED chip 110 and the first and second lead members 122 and 124 may be electrically connected by wire bonding have.

In this embodiment, as shown in FIG. 3, the lead frame 120 may have a shape in which the upper portion of the side surface protrudes from the lower portion. That is, each of the first and second lead members 122 and 124 may be formed with a step on the side surface, and the step formed on the side surface of the first and second lead members 122 and 124 may be formed in a shape Lt; / RTI > Accordingly, the contact area between the first and second lead members 122 and 124 and the housing 130 is increased, so that the coupling force can be increased.

The first and second lead members 122 and 124 are exposed to the lower portion of the LED package 100 as the width of the lower portion of the first and second lead members 122 and 124 becomes smaller than the width of the upper portion of the side surface. The size can be reduced. The distance between the first and second lead members 122 and 124 exposed at the lower portion of the light emitting diode package 100 is widened so that the external device and the LED package 100 are electrically coupled to each other, And the second lead members 122 and 124 are electrically short-circuited.

The housing 130 has a shape that wraps each of the sides of the first and second lead members 122 and 124 to support the lead frame 120. The spaced space between the first and second lead members 122 and 124 is also filled by the housing 130 so that the first and second lead members 122 and 124 can be electrically separated from each other . The housing 130 is not formed to cover the entirety of the first and second lead members 122 and 124 but has a shape exposing a part of the upper surface of the first lead member 122, The size and shape of the light emitting diode package 100 are determined according to the external dimensions and shape of the light emitting diode package 100.

The housing 130 is thicker than the lead frame 120 because it has a shape that completely covers the side of the lead frame 120 while exposing a part of the first lead member 122 at the upper portion. Further, the thickness of the housing 130 may become thicker from the exposed region of the first lead member 122 to the outside. 1 and 3, the upper surface of the housing 130 has a first region h1 in which the first lead member 122 is exposed so that the light emitting diode chip 110 is disposed at the inner center, And an inner side surface inclined upward toward the outer side of the housing 130 is provided.

At this time, the inner surface of the housing 130 is formed as an inclined surface that is inclined upward in the outward direction, and the inclined surface includes the first and second reflective surfaces 132 and 134. The first reflecting surface 132 is formed to be inclined downward inward from the outer upper end of the housing 130 and occupies most of the inner surface of the housing 130.

Here, the area of the first region h1 on the plan view shown in FIG. 2 may be 10% to 30% of the total area of the light emitting diode package 100. As the area of the first region h1 is formed smaller than the total area of the LED package 100, the area occupied by the first reflective surface 132 in the LED package 100 can be increased, The light emitting efficiency of the light emitting diode package 100 can be increased as the area of the light emitting diode 132 increases.

At this time, if the area of the first region h1 is larger than 30% of the total area of the light emitting diode package 100, the light emitting efficiency of the light emitting diode package 100 may be lowered. In addition, if the light emitting diode chip 110 is smaller than 10%, the size of the light emitting diode chip 110 that can be mounted on the light emitting diode package 100 may be limited, So that a space for wire bonding can be reduced and a defect may occur in the process. Accordingly, it is advantageous that the area of the first region h1 is 10% to 30% of the total area of the LED package 100, as described above.

As described above, the width of the first region h1 is relatively reduced as the area of the reflective surface 132 of the LED package 100 is widened. Accordingly, the width of the first region h1, The area of the lead member 122 is reduced. Even if the first lead member 122 is discolored as the area of the first lead member 122 is reduced, the area in which the first lead member 122 is discolored is smaller than in the prior art, The light emitting efficiency of the light emitting diode package 100 may be good.

2, when the width of the first area h1 is compared with the width of the first reflective surface 132, the first area h1 is formed in one direction on the plane of the light emitting diode package 100, The width b2 of the first reflecting surface 132 may be about 33% to 133% with respect to the width b1 of the first reflecting surface 132. [ That is, the area of the first region h1 may vary according to the size of the LED chip 110 in a state where the size of the LED package 100 is constant. The width b1 of the first region h1 and the width b1 of the first region h1 may be different from each other in consideration of the luminous efficiency of the LED package 100 according to the present embodiment, And the width b2 of the one reflecting surface 132 can be determined.

In this embodiment, a predetermined surface is formed at the upper end of the housing 130, and a step may be formed between the first reflecting surface 132 and the upper surface of the housing 130. That is, the upper end surface of the housing 130 may be arranged slightly higher than the first reflecting surface 132. When the sealing material is formed so as to cover the first reflective surface 132 while covering the LED chip 110 as a step is formed between the first reflective surface 132 and the upper surface of the housing 130, It can be prevented from being formed over the upper surface of the housing 130 and overflowing to the outside.

 The inner end of the first reflecting surface 132 may be located above the first lead member 122 to form a step with the upper surface of the first lead member 122 exposed inside the housing 130. That is, the first reflecting surface 132 does not extend to the upper surface of the first lead member 122 exposed in the first region h1 even if the first reflecting surface is inclined toward the inner side from the outer upper end of the housing 130. [

As the first reflecting surface 132 is not brought into contact with the upper surface of the first lead member 122 exposed in the first area h1, the first reflecting surface 132 may be in contact with the upper surface of the first lead member 122 The first reflecting surface 132 may have a relatively gentle slope as compared with the case where the first reflecting surface 132 is in contact with the upper surface.

The second reflecting surface 134 extends from the inner end of the first reflecting surface 132 and extends to contact the first lead member 122 exposed in the first area h1. At this time, the point where the second reflective surface 134 and the exposed first lead member 122 are contacted may be separated from the exposed LED chip 110 mounted on the exposed first lead member 122 by a predetermined distance or more .

In addition, a groove 136 may be formed in a portion of the inner inclined surface of the housing 130 where the first region h1 is formed. The groove 136 formed in the first region h1 further exposes a part of the first lead member 122 and the wire is bonded to the position of the first lead member 122 exposed by the groove 136 . Although the grooves 136 are formed in the center of the side surface of the first region h1 in the present embodiment, the grooves 136 may be formed on the corner side or the other side of the first region h1.

When the groove 136 is disposed at the center of the side surface of the first region h1, the length of the wire electrically connecting the LED chip 110 and the first lead member 122 is shortened, . When the groove 136 is formed on the corner of the first region h1, the groove 136 can be formed in a small size. As the groove 136 is reduced in size, The reflectance of the light emitted from the light emitting diode chip 110 can be increased.

In this embodiment, a second region h2 may be formed in which the second lead member 124 is exposed on the first reflection surface 132. [ A portion of the upper surface of the second lead member 124 is exposed and the zener diode 140 is mounted on the upper surface of the exposed second lead member 124 as the second region h2 is formed. The second lead member 124 exposed in the second region h2 may be electrically connected to the light emitting diode chip 110 by wire bonding.

The Zener diode 140 is provided to prevent the light emitting diode chip 110 from being damaged by static electricity that may be generated when power is supplied from the outside. Although the Zener diode 140 is mounted on the second region h2 in this embodiment, the Zener diode 140 may be located inside the housing 130 and may not be exposed to the outside if necessary. In addition, the zener diode 140 may be mounted on any one of the first and second lead members 122 and 124.

At this time, the zener diodes 140 are packaged by the housing 130 in a state of being mounted on one of the first and second lead members 122 and 124. It can be packaged in a completely covered state by the resin or the like constituting the housing 130. When the Zener diode 140 is packaged in the housing 130, the area of the first reflecting surface 132 is increased compared with the case where the Zener diode 140 is exposed to the outside, Emitting efficiency of the light emitting diode package 100 can be increased.

3, the first and second reflecting surfaces 132 and 134 will be described in more detail.

As described above, the first reflection surface 132 is formed to be inclined downward toward the center of the LED package 100 at a stepped position from the outer upper end surface of the housing 130. A second reflective surface 134 is formed from the inner end of the first reflective surface 132 to the upper surface of the first lead member 122 of the first area h1. 3, the first reflection surface 132 and the second reflection surface 134 have different inclination angles, and the inclination angle a of the first reflection surface 132 is a second half May be smaller than the inclination angle b of the slope 134 (a < b).

Since the second reflecting surface 134 having the relatively large inclination angle b is formed at the inner end of the first reflecting surface 132, the size of the first area h1 can be maximized. At this time, the inclination angle b of the second reflecting surface 134 may have an angle of 45 degrees to 90 degrees (45? B? 90). The second reflecting surface 134 is formed so that the first reflecting surface 132 is relatively extended from the first reflecting surface 122 as compared with the case where the first reflecting surface 132 extends at the same inclination angle a and contacts the first lead member 122 the width of the first region h1 can be widened and the degree of freedom with respect to the size of the LED chip 110 mounted on the first region h1 can be increased.

In this case, if the inclination angle of the second reflection surface 134 is less than 45 degrees, a space for mounting the light emitting diode chip 110 in the first area h1 is reduced by that much, And space for wire bonding may be difficult to obtain.

The distance d1 between the inner end of the first reflecting surface 132 and the top surface of the first lead member 122, that is, the height d1 of the second reflecting surface 134, and the distance d2 from the top surface of the first lead member 122 to the active layer 114 of the light emitting diode chip 110 may be smaller than the distance d2. That is, the height d1 of the inner end of the first reflecting surface 132 is set to be greater than the height d1 of the light emitting diode chip 110 so that the light emitted from the LED chip 110 can be reflected by the first reflecting surface 132. [ (d3) and may be lower than the height (d2) of the n-type semiconductor layer (116). Here, the height d1 of the second reflection surface may be 50 mu m to 300 mu m.

Here, since the light is generated and emitted from the active layer 114 of the LED chip 110, if the inner end height d1 of the second reflective surface 134 is higher than the position d2 of the active layer 114 , The light emitted from the active layer 114 is more likely to be reflected by the second reflective surface 134, so that the light emitting efficiency of the light emitting diode package 100 may be lowered. This is because the reflection efficiency of the second reflection surface 134 may be lower than that of the first reflection surface 132 because the second reflection surface 134 has an inclination angle larger than that of the first reflection surface 132.

FIG. 4 is a perspective view illustrating a light emitting diode package according to a second embodiment of the present invention, and FIG. 5 is a plan view illustrating a light emitting diode package according to a second embodiment of the present invention. FIG. 6 is a cross-sectional view taken along the perforated line AA 'of FIG. 2, and FIG. 7 is an exemplary view illustrating an encapsulant included in the LED package according to the second exemplary embodiment of the present invention.

4 and 5, a light emitting diode package 100 according to a second embodiment of the present invention includes a light emitting diode chip 110, a lead frame 120, a housing 130, and a zener diode 140 . The LED package according to the second embodiment of the present invention will be described, and the same description as in the first embodiment will be omitted.

A predetermined surface is formed on the upper end of the housing 130 in the present embodiment and a step a1 is formed between the first reflecting surface 132 and the upper end surface 138 of the housing 130, Can be formed. That is, the upper end surface 138 of the housing 130 may be disposed slightly higher than the first reflecting surface 132.

In the present embodiment, the light emitting diode package 100 may further include an encapsulant 150, as shown in FIG. The encapsulant 150 may be formed of resin or silicon and may be formed to cover the first and second reflective surfaces 132 and 134 together with the LED chip 110. In this case, the sealing material 150 may be a liquid sealing material 150 during the manufacturing process, and may be formed by curing the liquid sealing material 150 while filling the inside of the housing 130. During the process of covering the light emitting diode chip 110 and the first and second reflective surfaces 132 and 134, the liquid encapsulant 150 floats to the outside of the housing 130, (A1) is formed between the first reflective surface 138 and the first reflective surface 132, as shown in FIG.

7, since the step a1 is formed between the first reflecting surface 132 and the upper end surface 138 of the housing 130, the light emitting diode chip 110 is covered, It is possible to prevent the sealing material 150 from being formed over the upper end surface 138 of the housing 130 when the sealing material 150 is formed to cover the slant surface 132. [

Referring again to FIG. 5, the top surface 138 of the housing 130 will be further described. The upper end surface 138 of the housing 130 is formed so as to surround the outermost portion of the LED package 100 in a plan view and the contour line of the upper end surface 138 determines the outer shape of the first reflective surface 132 . As shown in the figures, the outline of the top face 138 is rectangular, and the outline of the top face 138 has a straight side and a curved edge. That is, the contour line of the top surface 138 may have a shape similar to an elliptical shape.

In this embodiment, the top surface 138 of the housing 130 may vary in width depending on the position. In other words, the width w1 of the upper end surface 138 at the side of the light emitting diode package 100 and the width w2 of the upper end surface 138 at the corner side may be different from each other, The width w2 may be greater than the width w1 of the top surface 138 of the side surface. That is, the width w1 of the top surface 138 at a position where the contour line of the top surface 138 has a straight line has a constant width and the contour line of the contour line has a curved shape, The width (w2) of the protrusion can be increased toward the corner side. At this time, the maximum width w2 at the corner side of the top surface 138 of the housing 130 may be about 3 to 7 times the side width w1.

Since the width of the upper end surface 138 of the housing 130 is increased from the side to the edge side as in the case where the light emitting diode packages 100 collide with each other in the process of manufacturing the LED package 100, Even if an external force is applied to the housing 100, it is possible to minimize occurrence of defects such as breakage of the housing 130 and the like.

If the maximum width w2 of the corner 130 of the housing 130 is less than three times the width w1 of the side surface of the LED package 100 when the light emitting diode package 100 is produced or transported, There is a high risk that the housing 130 will be damaged by collision with other equipment. In addition, if it is larger than 7 times, the width w2 of the corner side becomes too wide, and the area of the reflecting surface 132 is relatively reduced, so that the light emitting efficiency of the light emitting diode package 100 may be lowered.

In the present embodiment, the light emitting diode package 100 has four sides. In this embodiment, the width of the reflecting surface 132 extending from the top surface 138 located on at least two sides of the four sides may be four to seven times the width of the top surface 138 have. If the width of the reflecting surface 132 is less than four times the width of the top surface 138, the width of the top surface 138 becomes relatively wide, the width of the reflecting surface 132 becomes small, . If the width of the reflective surface 132 is too large, it is difficult to sufficiently secure the width of the first area h1, which is an area for mounting the light emitting diode chip 110, Lt; RTI ID = 0.0 &gt; wire bonding. &Lt; / RTI &gt;

FIG. 8 is a perspective view illustrating a light emitting diode package according to a third embodiment of the present invention, and FIG. 9 is a plan view illustrating a light emitting diode package according to a third embodiment of the present invention. And FIG. 10 is a cross-sectional view taken along the perforated line AA 'of FIG.

8 and 9, a light emitting diode package 100 according to a third embodiment of the present invention includes a light emitting diode chip 110, a lead frame 120, a housing 130, and a zener diode 140 . The light emitting diode package according to the third embodiment of the present invention will be described, and the same description as in the first and second embodiments will be omitted.

In the present embodiment, a second region h2 in which the second lead member 124 is exposed may be formed on the first reflection surface 132. [ The second region h2 may be formed to expose a part of the upper surface of the second lead member 124 and the zener diode 140 may be mounted on the exposed upper surface of the second lead member 124. [ The second lead member 124 exposed in the second region h2 may be electrically connected to the light emitting diode chip 110 by wire bonding.

As described above, the housing 130 positioned between the first region h1 and the second region h2 can be defined as the partition wall 139. [ The barrier ribs 139 are disposed between the first and second lead members 122 and 124 to electrically isolate the first lead member 122 from the second lead member 124, And has a shape protruding upward from the first and second lead members 122 and 124, as shown in Fig. The upper surface of the partition wall 139 has a second reflecting surface 134 inclined toward the first region h1 and a first reflecting surface 132 extending from the second reflecting surface 134 at the uppermost end. And a second inclined surface 139b on the opposite side of the second reflecting surface 134 with respect to the first reflecting surface 132. [

Here, the height of the barrier ribs 139 may be greater than the height of the zener diodes 140. The light emitted from the light emitting diode chip 110 may not be directly irradiated to the zener diode 140 by the partition wall 139. [

The second inclined surface 139b is inclined toward the second lead member 124 exposed in the second region h2 in the first reflecting surface 132 and the second inclined surface 139b and the second lead member 124 May or may not be in contact. That is, the second inclined surface 139b may have a slope opposite to that of the second reflecting surface 134.

As the second inclined surface 139b is formed in this way, the upper space of the second region h2 can be widened, and the second lead member exposed by the second region h2, 124 may be bonded by wires.

The area of the second area h2 may also influence the process. However, due to the characteristics of the wire bonding process, the second area h2 may have a larger area than the second area h2, the space above h2 may also be affected. That is, since the second inclined surface 139b is formed in the second region h2, the device for wire bonding can freely move from the upper portion of the second region h2 to the first region h1.

In addition, since the second inclined surface 139b is formed in the second region h2, the length of the wire bonded to the first region h1 and the second region h2 is shortened as shown in FIG. So that the optical interference caused by the wire can be reduced.

As shown in FIG. 10, the second inclined surface 139b may have two inclined surfaces, but is not limited thereto. The second inclined surface 139b may have one inclined surface, and may have more inclined surfaces. In addition, the second inclined surface 139b is not formed in a straight line on the cross section but may be formed in a curved line. That is, the second inclined surface 139b may be formed as a curved surface.

The first inclined surface 139a may be formed on an opposite surface of the second region h2 where the second inclined surface 139b is formed. The first inclined surface 139a is a surface inclined downward from the first reflective surface 132 located in the outer side of the second region h2 toward the second lead member 124. [ As the first inclined surface 139a is formed, the light emitted from the light emitting diode chip 110 may be reflected by the first inclined surface 139a and may be reflected to the upper portion of the light emitting diode package 100 to be emitted. To this end, the first inclined surface 139a may be a reflective surface.

When the light reflected by the first inclined surface 139a is directed to the second inclined surface 139b, the second inclined surface 139b is reflected again at the second inclined surface 139b and discharged to the upper portion of the light emitting diode package 100, Or a reflective surface.

At this time, the inclination angle of the first inclined surface 139a and the second inclined surface 139b may be relatively larger than that of the first reflecting surface 132, respectively. Further, the first inclined surface and the second inclined surface may each include at least two inclined surfaces, if necessary. As the first and second inclined surfaces each include two or more inclined surfaces, the light emitted from the light emitting diode chip can be more efficiently reflected.

As described above, since the first inclined surface 139a and the second inclined surface 139b are formed, it is advantageous to secure a space for mounting the zener diodes 140 in the second region h2.

11 is a cross-sectional view illustrating a light emitting diode package according to a fourth embodiment of the present invention.

Referring to FIG. 11, a light emitting diode package 100 according to a fourth embodiment of the present invention includes a light emitting diode chip 110, a lead frame 120, a housing 130, and a zener diode 140. The description of the LED package 100 according to the fourth embodiment of the present invention is omitted, and the same description as in the first to third embodiments will be omitted.

In this embodiment, the partition wall 139 has a shape protruding upward from the first and second lead members 122 and 124. The upper surface 132a of the partition wall 139 has a surface parallel to the upper surface 132a of the first and second lead members 122 and 124. One side of the upper surface 132a of the partition wall 139 may be formed with a second reflecting surface 134 and a second inclined surface 139b on the other side as in the third embodiment.

12 is a cross-sectional view illustrating a light emitting diode package according to a fifth embodiment of the present invention.

Referring to FIG. 12, a light emitting diode package 100 according to a fifth embodiment of the present invention includes a light emitting diode chip 110, a lead frame 120, a housing 130, and a zener diode 140. The description of the LED package 100 according to the fifth embodiment of the present invention is omitted, and the same description as in the first to third embodiments will be omitted.

In this embodiment, the partition wall 139 has a shape protruding upward from the first and second lead members 122 and 124. The upper surface of the partition wall 139 has a second reflecting surface 134 inclined toward the first region h1 and a first reflecting surface 132 extending from the second reflecting surface 134 at the uppermost end. And may have a vertical surface 139c on the opposite side of the second reflecting surface 134 with respect to the first reflecting surface 132. [ At this time, the vertical surface 139c is a surface formed in a direction perpendicular to the second lead member 124.

The area of the first reflective surface 132 located at the uppermost position can be increased as the partition wall 139 has the vertical surface 139c so that the reflective area of the light emitted from the light emitting diode chip 110 The light emitting efficiency of the light emitting diode package 100 can be increased.

13 is a cross-sectional view illustrating a light emitting diode package according to a sixth embodiment of the present invention.

Referring to FIG. 13, a light emitting diode package 100 according to a sixth embodiment of the present invention includes a light emitting diode chip 110, a lead frame 120, a housing 130, and a zener diode 140. A description of the light emitting diode package 100 according to the sixth embodiment of the present invention will be omitted, and the same description as in the first to third embodiments will be omitted.

In this embodiment, the partition wall 139 has a shape protruding upward from the first and second lead members 122 and 124. One side of the partition wall 139 may have a second reflecting surface 134 inclined toward the first region h1 and the other side may have a second inclined surface 139b on the opposite side of the second reflecting surface 134. [ And the second inclined surface 139b is inclined to the second region h2. The uppermost end of the partition wall 139 may have a sharp shape by the second reflecting surface 134 and the second inclined surface 139b.

Due to the shape of the partition wall 139, the angle of the second inclined surface 139b can have a relatively gentle slope than in the third embodiment, whereby the upper space of the second area h2 can be made larger , So that the freedom of wire bonding to the second region (h2) can be increased. Also, since the inclination of the second inclined surface 139b becomes gentle and the light reflected by the first inclined surface 139a is reflected by the second inclined surface 139b toward the upper portion of the light emitting diode package 100, The luminous efficiency of the light emitting diode package 100 can be increased.

14 is a cross-sectional view illustrating a light emitting diode package according to a seventh embodiment of the present invention.

Referring to FIG. 14, a light emitting diode package 100 according to a seventh embodiment of the present invention includes a light emitting diode chip 110, a lead frame 120, a housing 130, and a zener diode 140. The LED package 100 according to the seventh embodiment of the present invention will be described, and the same description as in the first to third embodiments will be omitted.

In this embodiment, the partition wall 139 has a shape protruding upward from the first and second lead members 122 and 124. One side of the partition wall 139 may have a second reflecting surface 134 inclined toward the first region h1 and the other side may have a vertical surface 139c on the opposite side of the second reflecting surface 134. [ The vertical surface 139c is a surface formed in a direction perpendicular to the second lead member 124. [ The uppermost end of the partition wall 139 may have a sharp shape by the second reflecting surface 134 and the vertical surface 139c.

The second reflecting surface 134 formed on the partition wall 139 is formed to have the second reflecting surface 134 and the second reflecting surface 139c having the second reflecting surface 134 and the vertical surface 139c in the present embodiment, (The second reflecting surface 134 directly extended from the second reflecting surface 132). The light emitted from the light emitting diode chip 110 is reflected by the second reflection surface 134 and emitted to the upper portion of the LED package 100.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It should be understood that the scope of the present invention is to be understood as the scope of the following claims and their equivalents.

100: Light emitting diode package
110: light emitting diode chip 120: lead frame
122: first lead member 124: second lead member
130: housing 132: first reflection surface
134: second reflecting surface 136: groove
138: top surface 139: bulkhead
139a: first inclined surface 139b: second inclined surface
139c:
140: Zener diode 150: Encapsulant
h1, h2: first and second regions

Claims (23)

A lead frame including first and second lead members spaced apart from each other;
A housing including a first region for supporting the lead frame and exposing a part of a top surface of at least one of the first and second lead members; And
And a light emitting diode chip mounted on the first region of the housing,
Wherein the housing has a first reflective surface extending obliquely from the outside of the housing toward the first area and a second reflective surface extending obliquely from the first reflective surface to an upper surface of any one of the first and second lead members exposed in the first area, And a second reflecting surface,
Wherein the inclination angle of the second reflection surface is larger than the inclination angle of the first reflection surface. The method according to claim 1,
And the inclination angle of the second reflection surface is 45 degrees to 90 degrees. The method according to claim 1,
And the second reflective surface includes a groove for further exposing the lead frame to the first region for wire bonding the light emitting diode chip. The method according to claim 1,
Wherein an area of the first region is 10% to 30% of a planar area of the light emitting diode package. A light emitting diode package,
A lead frame including first and second lead members spaced apart from each other;
A housing including a first region for supporting the lead frame and exposing a part of a top surface of at least one of the first and second lead members; And
And a light emitting diode chip mounted on the first region of the housing,
Wherein the housing extends obliquely from the outside of the housing toward the first region,
Wherein an area of the first region is 10% to 30% of a planar area of the light emitting diode package. The method of claim 5,
Wherein the housing has a first reflective surface extending obliquely from the outside of the housing toward the first area and a second reflective surface extending obliquely from the first reflective surface to an upper surface of any one of the first and second lead members exposed in the first area, And a second reflecting surface,
Wherein the inclination angles of the first reflective surface and the second reflective surface are different from each other. The method according to claim 1 or 6,
Wherein a height of the second reflection surface is lower than a height of the light emitting diode chip. The method according to claim 1 or 6,
The light emitting diode chip includes: an n-type semiconductor layer; a p-type semiconductor layer; And an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer,
And the height of the second reflecting surface is lower than the height of the active layer. A lead frame including first and second lead members spaced apart from each other;
A housing including a first region for supporting the lead frame and exposing a part of a top surface of at least one of the first and second lead members; And
And a light emitting diode chip mounted on the first region of the housing,
Wherein the housing includes a top surface formed at an upper end thereof and a reflecting surface extending obliquely from the outside of the housing toward the first region side,
And a step is formed between the upper surface and the reflective surface. The method of claim 9,
Wherein the top surface of the housing comprises an outline comprising a first straight line and a contour line comprising a curve and a second straight line. The method of claim 9,
Wherein the top surface of the housing is different in width between the side of the housing and the edge. The method of claim 11,
And the edge side width is 3 to 7 times the lateral side width. The method according to claim 1 or 9,
Wherein the housing further includes a second region that exposes a portion of a top surface of the other one of the first and second lead members to bond the LED chip. The method of claim 9,
And an encapsulant covering the first region and the reflective surface. The method of claim 9,
Wherein the housing has two or more sides and the width of the reflective surface located at the two or more sides is four to seven times the width of the top surface adjacent to the reflective surface. A lead frame including first and second lead members spaced apart from each other;
A first region for supporting the lead frame and exposing a part of a top surface of any one of the first and second lead members and a second region for exposing a part of the top surface of the other of the first and second lead members ; And
And a light emitting diode chip mounted on the first region of the housing,
The housing includes a reflective surface extending obliquely from the outside of the housing toward the first area and an inclined surface extending obliquely from the reflective surface to the top surface of the other one of the first and second lead members exposed in the second area Emitting diode package. 18. The method of claim 16,
And the second region is surrounded by the reflective surface. 18. The method of claim 17,
Wherein the inclined surface includes a first inclined surface formed to be inclined to an upper surface of the other one of the first and second lead members exposed in the second region at a reflective surface located on the first region side. 19. The method of claim 18,
Wherein the first inclined surface and the second inclined surface are opposite to each other. 18. The method of claim 17,
Wherein the inclined surface includes a second inclined surface formed to be inclined to an upper surface of the other one of the first and second lead members exposed in the second region at a reflective surface located outside the housing. The method of claim 20,
And the second inclined surface has a larger inclination angle than the reflective surface. 18. The method of claim 16,
And a zener diode mounted in the second region. 23. The method of claim 22,
Wherein a thickness of the Zener diode is smaller than a height of a second region side end of a reflecting surface surrounding the second region in a mounting view of the Zener diode.

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