CN107546310B - Light emitting diode package - Google Patents

Light emitting diode package Download PDF

Info

Publication number
CN107546310B
CN107546310B CN201710363240.1A CN201710363240A CN107546310B CN 107546310 B CN107546310 B CN 107546310B CN 201710363240 A CN201710363240 A CN 201710363240A CN 107546310 B CN107546310 B CN 107546310B
Authority
CN
China
Prior art keywords
emitting diode
light emitting
region
lead
reflecting surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710363240.1A
Other languages
Chinese (zh)
Other versions
CN107546310A (en
Inventor
金赫骏
李亨根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Semiconductor Co Ltd
Original Assignee
Seoul Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Priority to CN201810698176.7A priority Critical patent/CN108511580A/en
Publication of CN107546310A publication Critical patent/CN107546310A/en
Application granted granted Critical
Publication of CN107546310B publication Critical patent/CN107546310B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a light emitting diode package, comprising: a lead frame including a1 st lead part and a 2 nd lead part spaced apart from each other; a case supporting the lead frame and including a1 st region exposing a portion of an upper surface of at least one of the 1 st and 2 nd lead members; and a light emitting diode chip attached to the No. 1 region of the housing; the housing further includes a1 st reflecting surface extending obliquely from the outside of the housing toward the 1 st region side, and a 2 nd reflecting surface extending obliquely from the 1 st reflecting surface to an upper surface of any one of the 1 st lead member and the 2 nd lead member exposed in the 1 st region, and an inclination angle of the 2 nd reflecting surface is larger than an inclination angle of the 1 st reflecting surface. According to the invention, the inclination angle of the inner side wall of the shell of the light-emitting diode package is formed smoothly, so that the light-emitting efficiency of the light-emitting diode package can be improved.

Description

Light emitting diode package
Technical Field
The present invention relates to a light emitting diode package, and more particularly, to a light emitting diode package in which a reflective surface is formed on a case.
Background
Light emitting diodes are used in various fields such as display devices, automobile lamps, and general lighting as inorganic semiconductor elements for emitting light generated by recombination of electrons and holes to the outside. The light emitting diode has the advantages of long service life, low power consumption and high response speed. Therefore, light emitting devices using light emitting diodes are used for light sources in various fields.
In the conventional light emitting diode package, a light emitting diode chip is mounted on a lead frame and then packaged in a package. Also, the inner sidewall of the package has a predetermined angle so that light emitted from the light emitting diode chip can be reflected at the inner sidewall of the package.
In this case, the led chip and the lead frame may be electrically connected by a wire, and a predetermined or more space needs to be formed between the led chip and the inner wall of the case in order to wire-bond the led chip. However, in order to secure a space for mounting the light emitting diode chip in a state where the size of the package is fixed, the inner wall of the package is formed only approximately vertically, and thus there is a problem that the inner wall of the package cannot function as a reflection surface to a greater extent.
Disclosure of Invention
The present invention addresses the problem of providing a light emitting diode package capable of improving light emission efficiency by reflection at the inner side wall of a case.
Means for solving the problems
The invention provides a light emitting diode package, which comprises: a lead frame including a1 st lead part and a 2 nd lead part spaced apart from each other; a case supporting the lead frame and including a1 st region exposing a portion of an upper surface of at least one of the 1 st and 2 nd lead members; and a light emitting diode chip attached to the No. 1 region of the housing; the case further includes a1 st reflecting surface and a 2 nd reflecting surface, the 1 st reflecting surface extends obliquely from the outside of the case toward the 1 st region side, the 2 nd reflecting surface extends obliquely from the 1 st reflecting surface to an upper surface of any one of the 1 st lead member and the 2 nd lead member exposed in the 1 st region, and an inclination angle of the 2 nd reflecting surface is larger than an inclination angle of the 1 st reflecting surface.
In addition, the present invention provides a light emitting diode package, comprising: a lead frame including a1 st lead part and a 2 nd lead part spaced apart from each other; a case supporting the lead frame and including a1 st region exposing a portion of an upper surface of at least one of the 1 st and 2 nd lead members; and a light emitting diode chip attached to a1 st region of the package, the package extending obliquely from an outer side of the package to the 1 st region side, an area of the 1 st region being 10% to 30% of an area of a planar upper surface of the light emitting diode package.
In addition, the present invention provides a light emitting diode package, comprising: a lead frame including a1 st lead part and a 2 nd lead part spaced apart from each other; a case supporting the lead frame and including a1 st region exposing a portion of an upper surface of at least one of the 1 st and 2 nd lead members; and a light emitting diode chip attached to the 1 st region of the housing, the housing including an upper end surface formed at an upper end and a reflecting surface extending obliquely from an outer side of the housing to the 1 st region side, a step being formed between the upper end surface and the reflecting surface.
In addition, the present invention provides a light emitting diode package, comprising: a lead frame including a1 st lead part and a 2 nd lead part spaced apart from each other; a case supporting the lead frame, the case including a1 st region exposing a portion of an upper surface of at least one of the 1 st and 2 nd lead members and a 2 nd region exposing a portion of an upper surface of the other of the 1 st and 2 nd lead members; and the light-emitting diode chip is attached to the No. 1 area of the shell, and the shell comprises: a reflecting surface extending obliquely to the 1 st region side outside the housing; and an inclined surface extending obliquely from the reflection surface to an upper surface of the other of the 1 st lead member and the 2 nd lead member exposed in the 2 nd region.
Technical effects
According to the invention, the inclination angle of the inner side wall of the shell of the light-emitting diode package is formed smoothly, so that the light-emitting efficiency of the light-emitting diode package can be improved.
Further, as described above, since the inclination angle of the case inner wall is formed to be gentle in order to improve the light emitting efficiency of the light emitting diode package, the size of the exposed region of the lead frame to which the light emitting diode chip can be mounted is prevented from being reduced, and therefore, the case inner wall includes the 1 st reflecting surface and the 2 nd reflecting surface, and the inclination angle of the 2 nd reflecting surface is made larger than the inclination angle of the 1 st reflecting surface, so that the size of the exposed region of the lead frame can be prevented from being reduced.
In addition, the inclination angle of the tail end of the inner side wall of the shell as the reflecting surface is increased, so that the space for mounting the light-emitting diode chip can be maximized. Further, the end angle of the inner side wall of the housing is set to 90 or less, so that the light reflected by the end is also released to the outside, thereby improving the light emitting efficiency of the light emitting diode package.
Also, the upper surface of the case has a predetermined width and is protruded so as to have a step difference with the reflection surface, and thus the sealing material can be prevented from overflowing to the outside of the case in the process of filling and forming the sealing material to the inside of the case.
Further, by making the angular width larger than the lateral width of the upper surface of the housing, it is possible to prevent the housing from being cracked even if an external impact occurs during the manufacturing process. In addition, the shape of the corner side of the upper surface of the housing may have a curved line, and the shape of the reflecting surface may also have a curved line, so that the efficiency of reflecting the light emitted by the light emitting diode chip on the reflecting surface of the corner side can be improved.
In addition, since the 2 nd region is formed on the package and the 2 nd lead member is exposed so that the package is formed to protrude from the upper portion between the 1 st region and the 2 nd region, light emitted from the light emitting diode chip does not directly reach the zener diode, and there is an effect that light loss due to the zener diode can be minimized.
Further, the upper surface of the partition wall disposed between the 1 st region and the 2 nd region includes the 1 st reflecting surface, the 2 nd reflecting surface, and the 2 nd inclined surface, and as the 2 nd inclined surface is inclined downward from the 2 nd reflecting surface toward the 2 nd region side, the process of bonding the zener diode lead to the 1 st lead member of the 1 st region is facilitated, the length of the lead is shortened, and the effect of reducing the optical interference due to the lead is obtained.
Drawings
Fig. 1 is a perspective view illustrating a light emitting diode package according to embodiment 1 of the present invention;
fig. 2 is a plan view illustrating a light emitting diode package according to embodiment 1 of the present invention;
FIG. 3 is a cross-sectional view taken along section line AA' of FIG. 2;
fig. 4 is a perspective view illustrating a light emitting diode package according to embodiment 2 of the present invention;
fig. 5 is a plan view illustrating a light emitting diode package according to embodiment 2 of the present invention;
FIG. 6 is a cross-sectional view taken along section line AA' of FIG. 5;
fig. 7 is an exemplary view illustrating a case where a sealing material is included in the light emitting diode package of embodiment 2 of the present invention;
fig. 8 is a perspective view illustrating a light emitting diode package according to embodiment 3 of the present invention;
fig. 9 is a plan view illustrating a light emitting diode package according to embodiment 3 of the present invention;
FIG. 10 is a cross-sectional view taken along section line AA' of FIG. 2;
fig. 11 is a sectional view illustrating a light emitting diode package according to embodiment 4 of the present invention;
fig. 12 is a sectional view illustrating a light emitting diode package according to embodiment 5 of the present invention;
fig. 13 is a sectional view illustrating a light emitting diode package according to embodiment 6 of the present invention;
fig. 14 is a sectional view illustrating a light emitting diode package according to embodiment 7 of the present invention.
Description of the symbols
100: light emitting diode package
110: light emitting diode chip 120: lead frame
122: 1 st lead member 124: no. 2 lead member
130: the housing 132: 1 st reflecting surface
134: 2 nd reflecting surface 136: trough
138: upper end surface 139: partition wall
139 a: first inclined surface 139 b: 2 nd inclined plane
139 c: vertical plane 140: zener diode
150: sealing materials h1, h 2: region 1 and region 2
Detailed Description
A light emitting diode package according to an embodiment of the present invention may include: a lead frame including a1 st lead part and a 2 nd lead part spaced apart from each other; a case supporting the lead frame and including a1 st region exposing a portion of an upper surface of at least one of the 1 st and 2 nd lead members; and a light emitting diode chip attached to the No. 1 region of the housing; the case may include a1 st reflecting surface obliquely extending from an outer side of the case toward the 1 st region side, and a 2 nd reflecting surface obliquely extending from the 1 st reflecting surface to an upper surface of any one of the 1 st lead member and the 2 nd lead member exposed in the 1 st region, and an inclination angle of the 2 nd reflecting surface may be larger than an inclination angle of the 1 st reflecting surface.
The 2 nd reflecting surface may include a groove for additionally exposing the lead frame in the 1 st region in order to perform wire bonding to the light emitting diode chip.
The package may further include a 2 nd region in which a portion of an upper surface of the other of the 1 st lead member and the 2 nd lead member is exposed for wire bonding of the light emitting diode chip, and a zener diode attached to the 2 nd region.
In addition, the LED chip can further comprise a Zener diode which is attached to the lead frame and located in the shell.
Also, the area of the 1 st region may be 10% to 30% of the planar upper surface area of the light emitting diode package.
Wherein, the height of the 2 nd reflecting surface can be lower than that of the LED chip.
The light emitting diode chip may include: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a height of the 2 nd reflecting surface may be lower than a height of the active layer.
On the other hand, a light emitting diode package according to an embodiment of the present invention, which is a light emitting diode package, may include: a lead frame including a1 st lead part and a 2 nd lead part spaced apart from each other; a case supporting the lead frame and including a1 st region exposing a portion of an upper surface of at least one of the 1 st and 2 nd lead members; and a light emitting diode chip attached to a1 st region of the package, wherein the package may extend obliquely from an outer side of the package to the 1 st region side, and an area of the 1 st region may be 10% to 30% of an area of a planar upper surface of the light emitting diode package.
The case may include a1 st reflecting surface obliquely extending from an outer side of the case toward the 1 st region side, and a 2 nd reflecting surface obliquely extending from the 1 st reflecting surface to an upper surface of any one of a1 st lead member and a 2 nd lead member exposed in the 1 st region, and inclination angles of the 1 st reflecting surface and the 2 nd reflecting surface may be different from each other.
At this time, the height of the 2 nd reflecting surface may be lower than that of the light emitting diode chip.
Also, the light emitting diode chip may include: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a height of the 2 nd reflecting surface may be lower than a height of the active layer.
Preferred embodiments of the present invention will be described in more detail below with reference to the accompanying drawings.
Fig. 1 is a perspective view illustrating a light emitting diode package according to embodiment 1 of the present invention, fig. 2 is a plan view illustrating the light emitting diode package according to embodiment 1 of the present invention, and fig. 3 is a sectional view taken along a cut line AA' of fig. 2.
As shown in fig. 1 and 2, a light emitting diode package 100 according to embodiment 1 of the invention includes a light emitting diode chip 110, a lead frame 120, a housing 130, and a zener diode 140.
The led chip 110 includes one or more chips and is disposed on the lead frame 120. In addition, the one or more light emitting diode chips 110 may release light by means of an externally supplied power source, and the light released from the light emitting diode chips 110 may be released to the outside. As shown in fig. 3, the light emitting diode chip 110 includes an n-type semiconductor layer 116, an active layer 114, and a p-type semiconductor layer 112.
The N-type semiconductor layer 116, the active layer 114, and the p-type semiconductor layer 112 may respectively include group III-V series compound semiconductors, and may include nitride semiconductors such as (Al, Ga, In) N as one example. In this embodiment, the case where the active layer 114 is formed on the n-type semiconductor layer 116 and the p-type semiconductor layer 112 is formed on the active layer 114 is described, but the positions of the n-type semiconductor layer 116 and the p-type semiconductor layer 112 may be changed as necessary.
The n-type semiconductor layer 116 may include an n-type impurity (e.g., Si) and the p-type semiconductor layer 112 may include a p-type impurity (e.g., Mg). Active layer 114 is interposed between n-type semiconductor layer 116 and p-type semiconductor layer 112 and may include a multiple quantum well structure (MQW). Also, as for the active layer 114, the composition ratio thereof may be adjusted so as to be able to release light of a desired peak wavelength.
In the present embodiment, the light emitting diode chip 110 may include a p-type electrode electrically connected to the p-type semiconductor layer 112 and an n-type electrode electrically connected to the n-type semiconductor layer 116. Although not particularly limited, the n-type electrode may be electrically connected to the n-type semiconductor layer 116 through a via (via) or the like penetrating the active layer 114 and the p-type semiconductor layer 112, as an example.
The lead frame 120 includes a1 st lead member 122 and a 2 nd lead member 124, and the 1 st lead member 122 and the 2 nd lead member 124 are disposed in a spaced state from each other. The lead frame 120 has a flat plate shape, and the top surface and the bottom surface may be flat. Further, the 1 st lead part 122 has a wider area than the 2 nd lead part 124, and the light emitting diode chip 110 is mounted on the 1 st lead part 122 which is relatively wide. The lead frame 120 is provided to supply power to the light emitting diode chip 110, and the light emitting diode chip 110 and the 1 st and 2 nd lead parts 122 and 124 may be electrically connected by wire bonding, respectively.
In the present embodiment, the lead frame 120 may have a shape in which the upper portion of the side surface is protruded than the lower portion, as shown in fig. 3. That is, the 1 st and 2 nd lead members 122 and 124 may have a step formed on a side surface thereof, and the step formed on the side surfaces of the 1 st and 2 nd lead members 122 and 124 may have a shape in which an upper portion thereof protrudes from the side surface. Therefore, the contact area between the 1 st and 2 nd lead members 122 and 124 and the case 130 is increased, and the coupling force can be improved.
Further, as the width of the lower portion of the side surface of the 1 st lead member 122 and the 2 nd lead member 124 is smaller than that of the upper portion of the side surface, the 1 st lead member 122 and the 2 nd lead member 124 exposed to the lower portion of the light emitting diode package 100 may be reduced in size. Therefore, the interval between the 1 st and 2 nd lead members 122 and 124 exposed at the lower portion of the light emitting diode package 100 is widened, and it is possible to minimize the electrical short between the 1 st and 2 nd lead members 122 and 124 when an external device is electrically coupled to the light emitting diode package 100.
The case 130 has a shape of surrounding the 1 st and 2 nd lead parts 122 and 124, respectively, at the sides thereof so as to support the lead frame 120. Therefore, the space between the 1 st lead member 122 and the 2 nd lead member 124 is also filled by the case 130, and the 1 st lead member 122 and the 2 nd lead member 124 can be electrically separated from each other. The package 130 is not formed in a shape covering the entire 1 st lead member 122 and the 2 nd lead member 124, but has a shape in which a part of the upper surface of the 1 st lead member 122 is exposed, and the size and shape of the light emitting diode package 100 are determined according to the outer dimension and shape of the package 130.
The case 130 has a shape in which a portion of the 1 st lead part 122 is exposed at an upper portion and completely surrounds a side portion of the lead frame 120, and thus is thicker than the lead frame 120. Further, the thickness of the case 130 may be increased as the 1 st lead member 122 is located outward from the exposed region. That is, as shown in fig. 1 and 3, the upper surface of the package 130 has a1 st region h1 where the 1 st lead member 122 is exposed so that the light emitting diode chip 110 is disposed at the center of the inner side, and has an inner side surface inclined upward toward the outer side of the package 130.
At this time, the inner side surface of the housing 130 is formed with inclined surfaces inclined upward in the outward direction, and the inclined surfaces include a1 st reflecting surface 132 and a 2 nd reflecting surface 134. The 1 st reflecting surface 132 is formed to be inclined downward in the inward direction from the outer upper end of the housing 130, and occupies most of the inner surface of the housing 130.
Here, in the plan view shown in fig. 2, the area of the 1 st region h1 may be 10% to 30% of the entire area of the light emitting diode package 100. Accordingly, the area of the 1 st region h1 is formed to be smaller than the entire area of the light emitting diode package 100, and the area occupied by the 1 st reflecting surface 132 in the light emitting diode package 100 may be larger, and the light emitting efficiency of the light emitting diode package 100 may be improved as the area of the 1 st reflecting surface 132 is larger.
At this time, if the area of the 1 st region h1 is greater than 30% of the entire area of the light emitting diode package 100, the light emitting efficiency of the light emitting diode package 100 may be decreased. If the ratio is less than 10%, the size of the light emitting diode chip 110 that can be mounted on the light emitting diode package 100 is limited, so that the usability of the light emitting diode package 100 is reduced, and the space for mounting the light emitting diode chip 110 and performing wire bonding is reduced, which may cause defects in the process. Therefore, as described above, it is advantageous that the area of the 1 st region h1 is 10% to 30% of the entire area of the light emitting diode package 100.
Further, as described above, as the area of the reflection surface 132 of the light emitting diode package 100 is widened, the width of the 1 st region h1 is relatively reduced, and thus, the area of the 1 st lead part 122 exposed in the 1 st region h1 is reduced. As such, as the area of the 1 st lead member 122 is reduced, even if the 1 st lead member 122 is discolored, the area of the discoloration of the 1 st lead member 122 is reduced as compared to the conventional one, so that the light emitting diode package 100 according to the discoloration of the 1 st lead member 122 may have better light emitting efficiency.
In addition, as shown in fig. 2, if the width of the 1 st region h1 is compared with the width of the 1 st reflecting surface 132, the width b2 of the 1 st reflecting surface 132 may be about 33% to 133% with respect to the width b1 of the 1 st region h1 in one direction on the plane of the light emitting diode package 100. That is, in a state where the size of the light emitting diode package 100 is determined, the area of the 1 st region h1 varies depending on the size of the light emitting diode chip 110. Therefore, the area of the 1 st reflecting surface 132 may also be varied, but the relationship between the width b1 of the 1 st region h1 and the width b2 of the 1 st reflecting surface 132 may be determined as described above in consideration of the light emitting efficiency of the light emitting diode package 100 of the present embodiment.
In the present embodiment, a predetermined surface is formed at the upper end of the housing 130, and a step difference may be formed between the 1 st reflecting surface 132 and the upper end surface of the housing 130. That is, the upper end surface of the housing 130 may be disposed slightly higher than the 1 st reflecting surface 132. As the step difference is formed between the 1 st reflecting surface 132 and the upper end surface of the package 130, when the sealing material is formed so as to cover the light emitting diode chip 110 and the 1 st reflecting surface 132, it is formed so that the sealing material can be prevented from overflowing to the outside beyond the upper end surface of the package 130.
Further, the inner end of the 1 st reflecting surface 132 may be positioned above the 1 st lead member 122 so as to form a step difference with the upper surface of the 1 st lead member 122 exposed inside the case 130. That is, the 1 st reflecting surface 132 does not extend to the upper surface of the 1 st lead member 122 exposed in the 1 st region h1 even if it is inclined inward from the outer upper end of the case 130.
As such, as the 1 st reflecting surface 132 is not in contact with the upper surface of the 1 st lead member 122 exposed at the 1 st region h1, the 1 st reflecting surface 132 may have a relatively gentle inclination compared to a case where the 1 st reflecting surface 132 is in contact with the upper surface of the 1 st lead member 122.
The 2 nd reflecting surface 134 extends from the inner end of the 1 st reflecting surface 132 and may extend to contact the 1 st lead member 122 exposed in the 1 st region h 1. In this case, the point where the 2 nd reflecting surface 134 contacts the exposed 1 st lead member 122 may be spaced apart from the light emitting diode chip 110 mounted on the exposed 1 st lead member 122 by a predetermined distance or more.
Further, a groove 136 may be formed in a part of the position where the 1 st region h1 is formed on the inner inclined surface of the housing 130. The groove 136 formed in the 1 st region h1 additionally exposes a part of the 1 st lead member 122, and a wire can be bonded to the 1 st lead member 122 exposed through the groove 136. In the present embodiment, the case where the groove 136 is formed in the center of the side of the 1 st region h1 is illustrated in the drawing, but the groove 136 may be formed in the corner side or other side of the 1 st region h 1.
As described above, if the groove 136 is disposed at the center of the side surface of the 1 st region h1, the length of the metal wire electrically connecting the light emitting diode chip 110 and the 1 st lead member 122 is shortened, and light interference due to the metal wire can be reduced. In addition, if the groove 136 is formed at the corner side of the 1 st region h1, the groove 136 may be formed in a small size, and as the size of the groove 136 decreases, the area of the 1 st reflecting surface 132 may increase, so that the reflectance of light emitted from the light emitting diode chip 110 can be improved.
In the present embodiment, the 1 st reflecting surface 132 may be formed with the 2 nd region h2 where the 2 nd lead member 124 is exposed. As the 2 nd region h2 is formed, a portion of the upper surface of the 2 nd lead part 124 is exposed, and the zener diode 140 may be mounted on the exposed upper surface of the 2 nd lead part 124. In addition, the 2 nd lead part 124 exposed at the 2 nd region h2 may be electrically connected to the light emitting diode chip 110 by means of wire bonding.
The zener diode 140 is provided to prevent the light emitting diode chip 110 from being damaged by static electricity that may occur due to an externally supplied power. In the present embodiment, the description is made on the case where the zener diode 140 is attached to the 2 nd region h2, but the zener diode 140 may be located inside the case 130 without being exposed to the outside as necessary. Further, the zener diode 140 may be attached to any one of the 1 st lead member 122 and the 2 nd lead member 124.
At this time, the zener diode 140 may be packaged by the case 130 in a state of being attached to any one of the 1 st lead member 122 and the 2 nd lead member 124, and may be packaged in a state of being completely covered with a resin or the like constituting the case 130. If the zener diode 140 is packaged in the housing 130, the zener diode 140 is not exposed to the outside, and the area of the 1 st reflective surface 132 is increased compared to the case where the zener diode 140 is exposed to the outside, so that the light emitting efficiency of the light emitting diode package 100 can be improved.
Further, referring to fig. 3, the 1 st reflecting surface 132 and the 2 nd reflecting surface 134 will be described in more detail.
As described above, the 1 st reflecting surface 132 is formed to be inclined downward toward the center side of the light emitting diode package 100 from the position where the step is formed on the outer upper end surface of the housing 130. Further, a 2 nd reflecting surface 134 is formed from the inner end of the 1 st reflecting surface 132 to the upper surface of the 1 st lead member 122 in the 1 st region h 1. At this time, as shown in fig. 3, the 1 st reflecting surface 132 and the 2 nd reflecting surface 134 have different inclination angles from each other, and the inclination angle a of the 1 st reflecting surface 132 may be smaller than the inclination angle b of the 2 nd reflecting surface 134 (a < b).
As such, as the 2 nd reflecting surface 134 having the relatively large inclination angle b is formed at the inner end of the 1 st reflecting surface 132, the size of the 1 st region h1 can be secured to the maximum limit. At this time, the inclination angle b of the 2 nd reflecting surface 134 may have an angle of 45 to 90 degrees (45. ltoreq. b.ltoreq.90). Therefore, as compared with the case where the 1 st reflecting surface 132 extends at the same inclination angle a and contacts the 1 st lead member 122, the width of the 1 st region h1 can be relatively widened as the 2 nd reflecting surface 134 is formed, and thus, the degree of freedom in the size of the light emitting diode chip 110 mounted on the 1 st region h1 can be further increased.
At this time, if the inclination angle of the 2 nd reflecting surface 134 is less than 45 degrees, the space in which the light emitting diode chip 110 can be mounted in the 1 st area h1 is accordingly reduced, and it is difficult to secure a space for the light emitting diode chip 110 mounting process and a space for wire bonding.
In addition, a distance between the inner end of the 1 st reflecting surface 132 and the upper surface of the 1 st lead part 122, that is, a height d1 of the 2 nd reflecting surface 134 may be less than a thickness d3 of the light emitting diode chip 110, and more preferably, may be less than a distance d2 from the upper surface of the 1 st lead part 122 to the active layer 114 of the light emitting diode chip 110 (d1< d2< d 3). That is, the height d1 of the inner end position of the 1 st reflecting surface 132 may be located at a position lower than the height d3 of the light emitting diode chip 110 and may be lower than the height d2 of the n-type semiconductor layer 116, so that light emitted from the light emitting diode chip 110 may be reflected at the 1 st reflecting surface 132. Wherein the height d1 of the 2 nd reflecting surface may be 50 μm to 300 μm.
Here, since the active layer 114 of the light emitting diode chip 110 emits light and discharges the light, if the inner end height d1 of the 2 nd reflective surface 134 is higher than the position d2 of the active layer 114, the light emitted from the active layer 114 is reflected by the 2 nd reflective surface 134 more, and thus the light emitting efficiency of the light emitting diode package 100 is decreased. This is because the 2 nd reflecting surface 134 is inclined at a larger angle than the 1 st reflecting surface 132, and thus the reflection efficiency of the 2 nd reflecting surface 134 is lower than that of the 1 st reflecting surface 132.
Fig. 4 is a perspective view illustrating a light emitting diode package according to embodiment 2 of the present invention, and fig. 5 is a plan view illustrating the light emitting diode package according to embodiment 2 of the present invention. Also, fig. 6 is a sectional view taken along a section line AA' of fig. 2, and fig. 7 is an exemplary view illustrating a case where a sealing material is included in the light emitting diode package of embodiment 2 of the present invention.
Referring to fig. 4 and 5, the led package 100 according to embodiment 2 of the invention includes a led chip 110, a lead frame 120, a housing 130, and a zener diode 140. A light emitting diode package according to embodiment 2 of the present invention will be described, and the same description as that of embodiment 1 will be omitted.
In the present embodiment, a predetermined surface is formed at the upper end of the housing 130, and as shown in fig. 5, a step a1 may be formed between the 1 st reflecting surface 132 and the upper end surface 138 of the housing 130. That is, the upper end surface 138 of the housing 130 may be disposed slightly higher than the 1 st reflecting surface 132.
In the present embodiment, the light emitting diode package 100 may further include a sealing material 150 as shown in fig. 7. The sealing member 150 may be made of resin or silicon, and may cover the light emitting diode chip 110, the 1 st reflective surface 132, and the 2 nd reflective surface 134. At this time, the sealing material 150 may be formed by using a liquid sealing material 150 in the manufacturing process, and may be hardened in a state where the inside of the case 130 is filled with the liquid sealing material 150. Since the step a1 is formed between the upper end surface 138 of the package 130 and the 1 st reflecting surface 132, the liquid sealant 150 is prevented from overflowing to the outside of the package 130 while covering the light emitting diode chip 110 and the 1 st and 2 nd reflecting surfaces 132 and 134.
That is, since the step a1 is formed between the 1 st reflecting surface 132 and the upper end surface 138 of the package 130, when the sealing member 150 is formed so as to cover the 1 st reflecting surface 132 while covering the light emitting diode chip 110 as shown in fig. 7, the sealing member 150 can be prevented from being formed so as to protrude to the outside beyond the upper end surface 138 of the package 130.
Referring again to fig. 5, the upper end face 138 of the housing 130 is further described. The upper end surface 138 of the housing 130 is formed to surround the outermost contour of the led package 100 in a plan view, and the shape of the upper end surface 138 determines the contour of the 1 st reflecting surface 132. Therefore, as shown in the drawing, the outer contour of the upper end surface 138 has a rectangular shape, and the inner contour of the upper end surface 138 has a shape in which a side surface of a linear shape and a corner side of a curved shape extend to each other. That is, the inner profile of the upper end surface 138 may have a shape similar to an ellipse.
In this embodiment, the width of the upper end surface 138 of the housing 130 may vary from location to location. In other words, the width w1 of the upper end surface 138 at the side of the light emitting diode package 100 and the width w2 of the upper end surface 138 at the corner side may be different from each other, and the width w2 of the upper end surface 138 at the corner side may be greater than the width w1 of the upper end surface 138 at the side. That is, the width w1 of the upper end surface 138 may be increased at a position where the inner contour of the upper end surface 138 has a linear shape, a predetermined width, and a position where the inner contour has a curved shape, as compared with the width w2 of the outer contour of the upper end surface 138. At this time, the maximum width w2 of the corner side of the upper end surface 138 of the housing 130 may be about 3 to 7 times as large as the side width w 1.
As such, as the width of the upper end surface 138 of the housing 130 is formed to be larger from the side surface to the corner side, it is possible to minimize the occurrence of defects such as breakage of the housing 130 even if an external force is applied to the light emitting diode packages 100, such as the collision between the light emitting diode packages 100, in the process of manufacturing the light emitting diode packages 100.
Here, if the maximum width w2 of the corner side of the upper end surface 138 of the package 130 is smaller than the side width w1 by a factor of 3, the risk of the package 130 being broken due to collision with each other or other equipment when the light emitting diode package 100 is mass-produced or transported is high. In addition, if it is greater than 7 times, the width w2 of the corner side is too wide, and thus the area of the reflection surface 132 is relatively reduced, and thus the light emitting efficiency of the light emitting diode package 100 may be decreased.
In addition, in the present embodiment, a case where the light emitting diode package 100 has four sides will be described. At this time, in the present embodiment, the width of the reflection surface 132 extending from the upper end surface 138 side located on at least two sides among the four sides may be 4 times to 7 times as compared with the width of the corresponding upper end surface 138. As such, if the width of the reflecting surface 132 is less than 4 times the width of the corresponding upper end surface 138, the width of the upper end surface 138 is relatively widened, and the width of the reflecting surface 132 becomes small, so that the reflecting efficiency is lowered. Further, if it is larger than 7 times, the width of the reflection surface 132 becomes too large, and it becomes difficult to sufficiently secure the width of the 1 st region h1 which is a region required for mounting the light emitting diode chip 110, so that workability of mounting the light emitting diode chip 110 and performing wire bonding is deteriorated.
Fig. 8 is a perspective view illustrating a light emitting diode package according to embodiment 3 of the present invention, and fig. 9 is a plan view illustrating the light emitting diode package according to embodiment 3 of the present invention. Also, fig. 10 is a sectional view taken along a cut line AA' of fig. 2.
Referring to fig. 8 and 9, the led package 100 according to embodiment 3 of the invention includes a led chip 110, a lead frame 120, a housing 130, and a zener diode 140. A light emitting diode package according to embodiment 3 of the present invention will be described, and the same description as in embodiments 1 and 2 will be omitted.
In the present embodiment, the 1 st reflecting surface 132 may be formed with the 2 nd area h2 where the 2 nd lead member 124 is exposed. The 2 nd area h2 is formed such that a part of the upper surface of the 2 nd lead part 124 is exposed, and the zener diode 140 may be mounted on the exposed upper surface of the 2 nd lead part 124. Also, the 2 nd lead part 124 exposed at the 2 nd area h2 may be electrically connected with the light emitting diode chip 110 by means of wire bonding.
As described above, the housing 130 located between the 1 st region h1 and the 2 nd region h2 may be defined as the partition 139. The partition 139 is disposed between the 1 st lead member 122 and the 2 nd lead member 124 so as to electrically insulate the 1 st lead member 122 from the 2 nd lead member 124, and has a shape protruding upward from the 1 st lead member 122 and the 2 nd lead member 124 as shown in fig. 8 to 10. The upper surface of the partition 139 has the 2 nd reflecting surface 134 inclined toward the 1 st region h1 and the 1 st reflecting surface 132 extending from the 2 nd reflecting surface 134 at the uppermost end. The 2 nd reflecting surface 134 may have a 2 nd inclined surface 139b on the opposite side of the 1 st reflecting surface 132.
Wherein the height of the barrier 139 may be greater than the height of the zener diode 140. Therefore, the light emitted from the light emitting diode chip 110 may not directly irradiate the zener diode 140 by the partition 139.
The 2 nd inclined surface 139b is formed to be inclined from the 1 st reflecting surface 132 toward the 2 nd lead member 124 exposed in the 2 nd region h2, and the 2 nd inclined surface 139b may not contact or may contact the 2 nd lead member 124. That is, the 2 nd inclined surface 139b may be inclined at an opposite inclination to the 2 nd reflecting surface 134.
As such, as the 2 nd inclined surface 139b is formed, the upper space of the 2 nd region h2 can be widened, and thus, the degree of freedom in bonding the light emitting diode chip 110 and the 2 nd lead part 124 exposed through the 2 nd region h2 through a metal wire is increased.
In the process of wire bonding, although the area of the 2 nd region h2 also affects the process, the space above the 2 nd region h2 also affects the characteristics of the wire bonding process. That is, as the 2 nd inclined surface 139b is formed in the 2 nd region h2, the device for wire bonding can freely move from above the 2 nd region h2 toward the 1 st region h1 side.
In addition, as the 2 nd inclined surface 139b is formed in the 2 nd region h2, as shown in fig. 1, the length of the metal wire bonded in the 1 st region h1 and the 2 nd region h2, respectively, can be shortened, and the optical interference due to the metal wire can be reduced.
Further, as shown in fig. 10, the 2 nd inclined surface 139b may have two inclined surfaces, but is not limited thereto, and may have one inclined surface, and may have more inclined surfaces. The 2 nd inclined surface 139b may be formed not in a straight line but in a curved line in cross section. That is, the 2 nd inclined surface 139b may be formed in a curved surface.
In the 2 nd region h2, the 1 st inclined surface 139a may be formed on the surface facing the 2 nd inclined surface 139 b. The 1 st inclined surface 139a is a surface inclined downward in the direction of the 2 nd lead member 124 from the 1 st reflecting surface 132 located outside the 2 nd region h 2. As such, as the 1 st inclined surface 139a is formed, light emitted from the light emitting diode chip 110 may be reflected at the 1 st inclined surface 139a, reflected to an upper portion of the light emitting diode package 100, and released. For this reason, the 1 st inclined surface 139a may be formed of a reflecting surface.
Further, when the light reflected from the 1 st inclined surface 139a is directed toward the 2 nd inclined surface 139b, the 2 nd inclined surface 139b may be formed of a reflecting surface so as to be reflected again at the 2 nd inclined surface 139b and released to the upper portion of the light emitting diode package 100.
In this case, the 1 st inclined surface 139a and the 2 nd inclined surface 139b may be inclined at a relatively larger angle than the 1 st reflecting surface 132. Further, the 1 st inclined surface and the 2 nd inclined surface may include two or more inclined surfaces, respectively, as necessary. As described above, the 1 st inclined surface and the 2 nd inclined surface include two or more inclined surfaces, respectively, so that light emitted from the light emitting diode chip can be reflected more efficiently.
As described above, as the 1 st inclined surface 139a and the 2 nd inclined surface 139b are formed, it may be advantageous to secure a space for mounting the zener diode 140 at the 2 nd area h 2.
Fig. 11 is a sectional view illustrating a light emitting diode package according to embodiment 4 of the present invention.
Referring to fig. 11, the led package 100 according to embodiment 4 of the present invention includes an led chip 110, a lead frame 120, a housing 130, and a zener diode 140. A light emitting diode package 100 according to embodiment 4 of the present invention will be described, and the same description as in embodiments 1 to 3 will be omitted.
In the present embodiment, the partition 139 has a shape protruding upward from the 1 st lead member 122 and the 2 nd lead member 124. The upper surface 132a of the partition 139 has a surface parallel to the upper surfaces 132a of the 1 st and 2 nd lead members 122 and 124. One side of the upper surface 132a of the partition 139 may be formed with the 2 nd reflecting surface 134 and the other side may be formed with the 2 nd inclined surface 139b as in the 3 rd embodiment.
Fig. 12 is a sectional view illustrating a light emitting diode package according to embodiment 5 of the present invention.
Referring to fig. 12, the led package 100 according to embodiment 5 of the present invention includes an led chip 110, a lead frame 120, a housing 130, and a zener diode 140. A light emitting diode package 100 according to embodiment 5 of the present invention will be described, and the same description as in embodiments 1 to 3 will be omitted.
In the present embodiment, the partition 139 has a shape protruding upward from the 1 st lead member 122 and the 2 nd lead member 124. The upper surface of the partition 139 has the 2 nd reflecting surface 134 inclined toward the 1 st region h1 and the 1 st reflecting surface 132 extending from the 2 nd reflecting surface 134 at the uppermost end. Further, the 1 st reflecting surface 132 may be a reference surface, and a perpendicular surface 139c may be provided on the opposite side of the 2 nd reflecting surface 134. At this time, the vertical surface 139c is a surface formed in a direction perpendicular to the 2 nd lead member 124.
In this embodiment, as the partition 139 has the vertical surface 139c, since the area of the 1 st reflecting surface 132 positioned at the uppermost end may be increased, the area where light emitted from the light emitting diode chip 110 can be reflected is increased, and the light emitting efficiency of the light emitting diode package 100 can be improved.
Fig. 13 is a sectional view illustrating a light emitting diode package according to embodiment 6 of the present invention.
Referring to fig. 13, the led package 100 according to embodiment 6 of the present invention includes an led chip 110, a lead frame 120, a housing 130, and a zener diode 140. A light emitting diode package 100 according to embodiment 6 of the present invention will be described, and the same description as in embodiments 1 to 3 will be omitted.
In the present embodiment, the partition 139 has a shape protruding upward from the 1 st lead member 122 and the 2 nd lead member 124. Further, one side of the partition 139 may have the 2 nd reflection surface 134 inclined toward the 1 st region h1 side, and the other side may have the 2 nd inclined surface 139b on the opposite side of the 2 nd reflection surface 134. The 2 nd inclined surface 139b is inclined toward the 2 nd area h 2. Therefore, the uppermost end of the partition 139 may have a sharp shape by the 2 nd reflecting surface 134 and the 2 nd inclined surface 139 b.
Due to the shape of the partition 139, the angle of the 2 nd inclined surface 139b can have a relatively gentle inclination compared to that of the 3 rd embodiment, and therefore, the upper space of the 2 nd region h2 can be enlarged, and therefore, the degree of freedom of wire bonding to the 2 nd region h2 can be increased. In addition, since the inclination of the 2 nd inclined surface 139b is gentle, the light reflected from the 1 st inclined surface 139a is reflected again by the 2 nd inclined surface 139b and is released to the upper portion of the light emitting diode package 100, which is relatively high, and thus the light emitting efficiency of the light emitting diode package 100 can be improved.
Fig. 14 is a sectional view illustrating a light emitting diode package according to embodiment 7 of the present invention.
Referring to fig. 14, the led package 100 according to embodiment 7 of the present invention includes an led chip 110, a lead frame 120, a housing 130, and a zener diode 140. A light emitting diode package 100 according to embodiment 7 of the present invention will be described, and the same description as in embodiments 1 to 3 will be omitted.
In the present embodiment, the partition 139 has a shape protruding upward from the 1 st lead member 122 and the 2 nd lead member 124. Further, one side of the partition 139 may have the 2 nd reflecting surface 134 inclined toward the 1 st region h1 side, and the other side may have a vertical surface 139c on the opposite side of the 2 nd reflecting surface 134. The vertical face 139c is a face formed in a direction perpendicular to the 2 nd lead member 124. Therefore, the uppermost end of the partition 139 may have a sharp shape by means of the 2 nd reflecting surface 134 and the vertical surface 139 c.
As such, in the present embodiment, as the partition 139 has the 2 nd reflecting surface 134 and the vertical surface 139c, the 2 nd reflecting surface 134 formed at the partition 139 may have a more gentle inclination than the 2 nd reflecting surface (the 2 nd reflecting surface 134 directly extending from the 1 st reflecting surface 132) from the other 2 nd reflecting surface. Accordingly, light emitted from the light emitting diode chip 110 is reflected from the 2 nd reflecting surface 134, so that light emitting efficiency released toward the upper portion of the light emitting diode package 100 can be relatively improved.
As described above, the present invention is specifically explained based on the embodiments with reference to the drawings, but the embodiments are only explained as the preferred examples of the present invention, and thus it should not be understood that the present invention is limited to the embodiments, and the technical solution of the present invention and the equivalent concept thereof should be understood.

Claims (6)

1. A light emitting diode package, comprising:
a lead frame including a1 st lead part and a 2 nd lead part spaced apart from each other;
a case supporting the lead frame, the case including a1 st region exposing a portion of an upper surface of one of the 1 st and 2 nd lead members and a 2 nd region exposing a portion of an upper surface of the other of the 1 st and 2 nd lead members; and
a light emitting diode chip attached to the No. 1 region of the case,
the housing includes: a reflecting surface extending obliquely to the 1 st region side outside the housing; an inclined surface extending obliquely from the reflection surface to an upper surface of the other of the 1 st lead member and the 2 nd lead member exposed in the 2 nd region,
the reflection surface includes a1 st reflection surface and a 2 nd reflection surface, the 1 st reflection surface extends obliquely from the outside of the case toward the 1 st region, the 2 nd reflection surface extends obliquely from the 1 st reflection surface to an upper surface of one of the 1 st lead member and the 2 nd lead member exposed in the 1 st region,
the inclination angle of the 2 nd reflecting surface is larger than that of the 1 st reflecting surface,
the height of the 2 nd reflecting surface is lower than that of the light-emitting diode chip,
the 2 nd reflecting surface includes a groove further exposing the lead frame in the 1 st region, the groove being used for wire bonding the light emitting diode chip,
the inclined surface includes: a1 st inclined surface formed obliquely from a reflection surface located on the 1 st region side to an upper surface of the other of the 1 st and 2 nd lead members exposed in the 2 nd region; a 2 nd inclined surface formed to be inclined from a reflection surface located outside the case toward an upper surface of the other of the 1 st lead member and the 2 nd lead member exposed in the 2 nd region,
further comprising: a Zener diode mounted in the 2 nd region in a space between the 1 st inclined surface and the 2 nd inclined surface,
the light emitting diode is disposed between the zener diode and the slot.
2. The light emitting diode package of claim 1,
the 2 nd region is surrounded by the reflecting surface.
3. The light emitting diode package of claim 1,
the housing includes an upper end surface formed at an upper end,
in the upper end surface of the housing, the maximum width of the corner side of the housing is 3 to 7 times the width of the side surface side.
4. The light emitting diode package of claim 2,
the inclination direction of the 1 st inclined surface and the inclination direction of the reflection surface are opposite to each other.
5. The light emitting diode package of claim 2,
the inclination angle of the 2 nd inclined plane is larger than that of the reflecting plane.
6. The light emitting diode package of claim 1,
the thickness of the Zener diode is smaller than the height of the 2 nd region side end of the reflecting surface surrounding the 2 nd region at the mounting surface of the Zener diode.
CN201710363240.1A 2016-06-24 2017-05-22 Light emitting diode package Active CN107546310B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810698176.7A CN108511580A (en) 2016-06-24 2017-05-22 Light emission diode package member

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160079400A KR20180000976A (en) 2016-06-24 2016-06-24 Light emitting diode package
KR10-2016-0079400 2016-06-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201810698176.7A Division CN108511580A (en) 2016-06-24 2017-05-22 Light emission diode package member

Publications (2)

Publication Number Publication Date
CN107546310A CN107546310A (en) 2018-01-05
CN107546310B true CN107546310B (en) 2020-05-19

Family

ID=60966735

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201810698176.7A Pending CN108511580A (en) 2016-06-24 2017-05-22 Light emission diode package member
CN201710363240.1A Active CN107546310B (en) 2016-06-24 2017-05-22 Light emitting diode package

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201810698176.7A Pending CN108511580A (en) 2016-06-24 2017-05-22 Light emission diode package member

Country Status (2)

Country Link
KR (1) KR20180000976A (en)
CN (2) CN108511580A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111463334A (en) * 2020-04-16 2020-07-28 中国科学院半导体研究所 Ceramic substrate and packaging method thereof
CN114520284A (en) * 2021-12-31 2022-05-20 佛山市国星光电股份有限公司 Frame and light emitting device
CN114512591A (en) * 2021-12-31 2022-05-17 佛山市国星光电股份有限公司 Support and LED device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10041686A1 (en) * 2000-08-24 2002-03-14 Osram Opto Semiconductors Gmbh Component with a large number of LED chips
US7652301B2 (en) * 2007-08-16 2010-01-26 Philips Lumileds Lighting Company, Llc Optical element coupled to low profile side emitting LED
CN201549507U (en) * 2009-07-28 2010-08-11 浙江迈勒斯照明有限公司 LED integrated and encapsulated by multiple chips
KR101298406B1 (en) * 2010-05-17 2013-08-20 엘지이노텍 주식회사 Light Emitting Device
TWI531090B (en) * 2010-06-01 2016-04-21 Ｌｇ伊諾特股份有限公司 Light emitting device package
KR101693642B1 (en) * 2010-12-21 2017-01-17 삼성전자 주식회사 Manufacturing method of Light emitting device package
CN202049997U (en) * 2011-05-20 2011-11-23 安徽中智光源科技有限公司 Surface mounting LED (Light Emitting Diode) bracket and LED light source
CN103187485A (en) * 2011-12-27 2013-07-03 展晶科技(深圳)有限公司 Manufacturing method of light emitting diode
KR20140029617A (en) * 2012-08-29 2014-03-11 엘지이노텍 주식회사 A light emitting device package
CN103887397A (en) * 2012-12-22 2014-06-25 展晶科技(深圳)有限公司 Light-emitting diode
KR101831249B1 (en) * 2015-10-14 2018-02-23 엘지이노텍 주식회사 Light emitting package and lighting device having thereof
CN205881937U (en) * 2016-06-24 2017-01-11 首尔半导体股份有限公司 Light emitting diode package
CN206022415U (en) * 2016-06-24 2017-03-15 首尔半导体股份有限公司 Light emission diode package member
CN206040686U (en) * 2016-06-24 2017-03-22 首尔半导体股份有限公司 Light emitting diode package

Also Published As

Publication number Publication date
CN107546310A (en) 2018-01-05
CN108511580A (en) 2018-09-07
KR20180000976A (en) 2018-01-04

Similar Documents

Publication Publication Date Title
US7989835B2 (en) Light emitting diode package including metal lines having gap therebetween
US8288793B2 (en) LED package having a lead frame
KR101693642B1 (en) Manufacturing method of Light emitting device package
TWI603506B (en) Light emitting diode package
CN107546310B (en) Light emitting diode package
US9246074B2 (en) Light emitting device
US10788701B2 (en) Light emitting device and display device including the same
KR102059402B1 (en) Electronic device package and packaging substrate for the same
US9356200B2 (en) Light emitting device package
KR20120079668A (en) Led package and method thereof
KR101670951B1 (en) Light emitting device
JP2008166661A (en) Semiconductor light-emitting apparatus
CN110859052B (en) Light emitting diode package
CN206040686U (en) Light emitting diode package
CN206022415U (en) Light emission diode package member
KR20160014968A (en) A light emitting device package
US20230155086A1 (en) Light emitting diode package
JP5212089B2 (en) LED light emitting device
KR102070980B1 (en) Light emitting device
US20210193895A1 (en) Light emitting diode package
KR101692511B1 (en) Light emitting device
KR20110108757A (en) Light emitting diode package
KR20190084807A (en) Light emitting device
KR20190019691A (en) Light emitting diode package
KR20120050285A (en) Light emitting diode package

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant