CN201549507U - LED integrated and encapsulated by multiple chips - Google Patents
LED integrated and encapsulated by multiple chips Download PDFInfo
- Publication number
- CN201549507U CN201549507U CN2009201904578U CN200920190457U CN201549507U CN 201549507 U CN201549507 U CN 201549507U CN 2009201904578 U CN2009201904578 U CN 2009201904578U CN 200920190457 U CN200920190457 U CN 200920190457U CN 201549507 U CN201549507 U CN 201549507U
- Authority
- CN
- China
- Prior art keywords
- chip
- led
- chips
- containing cavity
- chip bearing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Led Device Packages (AREA)
Abstract
An LED (light-emitting diode) integrated and encapsulated by multiple chips relates to a type of LED. When welding is adopted to fix chips, the chips can move under the tension caused by the melting of solder, so that the contact area is reduced, heat transfer is influenced, and chips can generate overheat spots and limit the promotion of LED properties. The LED comprises an LED base, a plurality of LED chips arranged on the base and conductive pieces for connecting chips, and is characterized in that the base is coated with a silver reflecting layer; a chip bearing surface is arranged on the upper surface of the silver reflecting layer; a plurality of accommodation cavities which have openings facing upwards and are used for inserting chips are arranged on the chip bearing surface; the side walls of the accommodation cavities are limit surfaces for preventing chips from moving, and the bottoms thereof are the chip bearing surface; and soldering tin layers used for fixing chips on the chip bearing surface are accommodated on the bottoms of the accommodation cavities. The accommodation cavities arranged for inserting chips causes the positioning of chips to be accurate, the entire bottoms of the welded chips can be in complete contact with the soldering tin layers, so that overheat spots cannot be generated and the use life of the light sources is prolonged.
Description
[technical field]
The utility model relates to a kind of LED, refers to the integrated encapsulated LED of a kind of multicore sheet especially.
[background technology]
In the semiconductor lighting industry, making the high power semi-conductor light source always has two kinds of methods at present.First method be the less relatively a plurality of light-emitting diodes (hereinafter to be referred as LED) of power for example power be that the LED of 1W is placed in the light fixture, become a semiconductor lamp that power is bigger, second method is that a plurality of led chips are installed on the same chip bearing face, after carrying out suitable electricity combination, be packaged into a LED that power is bigger together.Along with the progress of heat conduction, heat dissipation technology, it is more and more to adopt second method to make high-power LED light source.
Current integrated encapsulated LED, its chip often adopt the silver slurry layer bonding, but the silver slurry layer thermal conductivity is not high, and best in the world its thermal conductivity of elargol also has only 2.0w/mk at present, is packaged into the LED thermal resistance about 8-10 ℃/w, and it is very big to reduce difficulty again.And metal solder can overcome the low problem of thermal conductivity, but bring the defective of others: accurate fixed chip position during welding thereupon, because scolder in when fusing because the surface tension of self, can form a sphere, make the chip that is placed on the scolder be subjected to arch power and produce mobile, and this moving is at random, this will cause the defective of welding, as shown in Figure 1, the contact-making surface of chip 3 and scolder 2 reduces and influences heat transmission, chip 3 easily produces heat spots, makes its effect of can't bringing into normal play, above-mentioned drawbacks limit the lifting of LED performance.
[utility model content]
The technical assignment of the technical problems to be solved in the utility model and proposition is that the prior art scheme is improved and improved, and provides a kind of multicore sheet integrated encapsulated LED, and chips welding can accurately be located.For this reason, the utility model is taked following technical scheme:
The integrated encapsulated LED of a kind of multicore sheet, comprise a LED pedestal, be located at a plurality of led chips on the pedestal and connect the electric-conductor of chip, it is characterized in that: described pedestal top is covered with argentum reflecting layer, the upper surface of described argentum reflecting layer is the chip bearing face, and described chip bearing face is provided with the containing cavity of a plurality of upward openings in order to the grafting chip; The sidewall of described containing cavity is the confined planes that limited chip moves, and its bottom surface is the chip bearing face, and the bottom of described containing cavity is received the soldering-tin layer of the affixed chip bearing face of chip.Argentum reflecting layer is used for reverberation, and soldering-tin layer can weld together with the Gold plated Layer of led chip and the argentum reflecting layer of pedestal, and chip is welded on the led chip loading end reposefully.Chip inserted in containing cavity because of being subjected to stopping of confined planes that it can be shifted because of tension force when the solder fusing, the whole bottom of chip after the welding fully contacts with the soldering layer and does not have the dead zone, prevent that heat spot from producing, thereby guarantee the lower junction temperature of chip, prolong the useful life of light source.In order to be easy to that led chip is put in the LED containing cavity, cavity can be slightly larger than the size of led chip substrate, and luminous for not blocking led chip, the degree of depth of cavity is not higher than the height of chip substrate.
As the further of technique scheme improved and replenish, the utility model also comprises following additional technical feature:
Described chip bearing face is covered with stator, and described stator is provided with a plurality of through holes that match with led chip, and described via bottoms is close to loading end and is formed described containing cavity.Stator thickness matches with the chip bearing face less than chip substrate and shape size, after several areas of position upper punch of default chip are slightly larger than the through hole of chip area, this stator is close on the chip bearing face of base, after via bottoms is put into scolder, led chip is inserted, heating base makes solder fusing, treats that scolder solidifies chip and just can be fixed on the chip bearing face.Treat that scolder solidifies this stator and also can take off.
Described led chip loading end row is provided with a plurality of inner groovies that match with chip as described containing cavity.Before pedestal is silver-plated lay on the position of chip impact several areas be slightly larger than chip area, the degree of depth less than the pit of chip thickness as containing cavity.
The confined planes of described containing cavity is provided with 10 °-70 ° beam angle.Setting out optic angle, to be used for not blocking led chip luminous.
Row is provided with and a plurality ofly constitutes containing cavity by end to end convex tendon on the described chip bearing face, and the confined planes evagination of described containing cavity is in the led chip loading end.The confined planes evagination of described containing cavity is in the led chip loading end.Convex tendon is erected confined planes around chip, in the middle of led chip is trapped among, in the solder fusing process, can not encircle chip to go out outside the confined planes.Confined planes can forming by the point gum machine point glue of precision, the colloid instantaneous solidification, just can be at the plane of limiting all around of chip installation site, lay scolder in the containing cavity bottom, led chip is placed on the scolder, scolder can be accurately after high temperature melting, cooling, reposefully chips welding on preposition.
The confined planes of described containing cavity is a transparent area.Making that led chip is luminous is not blocked.
The described containing cavity degree of depth is 30-70 μ m, and the soldering-tin layer height is 5-20 μ m.
The opening of described containing cavity is rectangular.。
The utility model beneficial effect:
1, the containing cavity of establishing the grafting chip makes chip positioning, and the whole bottom of the chip after the welding fully contacts with the soldering layer, prevents to produce heat spot, thereby guarantees the lower junction temperature of chip, prolongs the useful life of light source.
2, adopt the soldering layer to replace the elargol layer that chip is fixed on the base, accelerate the heat radiation of led chip.
[description of drawings]
Fig. 1 is the prior art constructions schematic diagram.
Fig. 2 is first kind of structural representation of the present utility model.
Fig. 3 is second kind of structural representation of the present utility model.
Fig. 4 is the plan structure schematic diagram of Fig. 3
Fig. 5 is the third structural representation of the present utility model.
Fig. 6 is the stator structural representation.
[embodiment]
Below in conjunction with Figure of description the technical solution of the utility model is described in further detail.
Embodiment one:
As shown in Figure 2, the utility model comprises a LED pedestal 1, be located at a plurality of led chips 3 on the LED pedestal 1 and connect the electric-conductor of chip 3, is provided with soldering-tin layer 2 between LED pedestal 1 and the chip 3 chip 3 is fixed in LED pedestal 1 top.LED pedestal 1 top is covered with argentum reflecting layer 7, and led chip 3 belows are covered with Gold plated Layer, are provided with soldering-tin layer 2 between argentum reflecting layer 7 and the Gold plated Layer.The surface of argentum reflecting layer 7 is the led chip loading end, row is provided with the containing cavity 4 a plurality of and led chip 3 that is used to peg graft on it, the rectangular aperture that containing cavity 4 tools make progress, containing cavity 4 sides are to be used to limit the confined planes that led chip 3 moves, and its bottom surface is the supporting surface in order to accept soldering-tin layer 2 and to be positioned at the chip 3 on the soldering-tin layer 2.The bottom surface indent of containing cavity 4 is in the led chip loading end, and its confined planes is provided with the beam angle between 10 °-70 °.The degree of depth of cavity is 30-70 μ m, and soldering-tin layer 2 highly is 5-20 μ m.The position impact area of the default chip 3 before silver-plated on pedestal 1 is slightly larger than chip 3 areas, the degree of depth is about the pit of chip 3 thickness 20%-50% as containing cavity 4, the degree of depth is a principle with the bright dipping that does not influence chip 3, after treating that pedestal 1 is silver-plated, put scolder, whole pedestal 1 is heated to the tin sheet melt in pit bottom, the amount of scolder is advisable can form the thick soldering-tin layer 2 of about 10 μ m after melting, approached very much and can make the welding fastness not enough, the too thick thermal resistance that makes on the contrary increases, again waste material.Chip 3 inserts the containing cavity 4 that is placed with scolder, because the thickness of chip 3 has 150 μ m, it is substrates that 100 μ m are wherein arranged approximately, so the degree of depth that chip 3 inserts containing cavity 4 has only the 1/2-1/3 of substrate, can not influence the bright dipping of chip 3, and also can be chip 3 arch displacements, along with finishing of welding process during solder fusing, chip 3 can be welded on the chip bearing face of base exactly, and a containing cavity 4 at this moment just is equivalent to the pedestal 1 of a little LED.Pit shape containing cavity 4 can adopt pressing or mill method for processing and form, and should push down base plane earlier man-hour adding with punch die, in case be extruded into the hole along getting on when dashing the hole, causes the hole along uneven and to block chip 3 luminous.Because of the Gold plated Layer of chip 3 bottom surfaces and argentum reflecting layer 7 all can and soldering connect, be soldered to reposefully on the led chip loading end of LED pedestal 1 so can guarantee chip 3.
Embodiment two:
Shown in Fig. 3,4, different with embodiment one is: row is provided with and a plurality ofly constitutes containing cavity 4 by end to end convex tendon 5 on the chip bearing face, and the confined planes evagination is in the led chip loading end, and the bottom surface is the led chip loading end.On the chip bearing face, around chip 3, erect transparent " wall " one, form containing cavity 4, led chip 3 is trapped among middle, scolder is in fusion process, can not encircle chip 3 to " outside the wall ", convex tendon 5 is formed by the point gum machine point glue of precision, certainly point gum machine needs to have the live width of accurate control injecting glue and the function of height, in injecting glue, use the UV-irradiation colloid, the colloid instantaneous solidification, just erected enclosure wall like this around chip 3 installation sites, scolder is laid in the bottom within the walls, and led chip 3 is placed on the scolder, the scolder high temperature melting, because the existence of wall, chip 3 can not encircleed wall, can be accurate, reposefully chip 3 is welded on the preposition.
Embodiment three:
Shown in Fig. 5,6, different with embodiment one is: be covered with stator 6 on the chip bearing face, stator 6 is provided with a plurality of a plurality of chip 3 through holes that are used to peg graft that match with led chip 3, and through-hole side wall is the confined planes that limited chip 3 moves, and soldering-tin layer 2 is contained in the through hole.Concrete is operating as: choose the moderate toughness of a kind of thickness material preferably, aluminium film for example, be made into onesize and film shape with the chip bearing face, on the position of default chip 3, impact the square hole that an area is slightly larger than chip 3 areas, for example to the chip 3 of 1mm * 1mm area, impact 1.05mm * 1.05mm square hole, during use this film is close on the chip bearing face of pedestal and forms containing cavity 4, this just equals to have erected a trap on the chip bearing face.Scolder is put in the trap bottom, and led chip 3 is placed on the scolder, and after heating made solder fusing, chip 3 just was welded on the chip bearing face, treats that scolder solidifies back aluminium film and also can throw off.Stator 6 also can adopt ptfe sheet; punching out one-tenth and LED pedestal 1 shape, equirotal thin slice are also designing the upper punch plural number hole, position of putting chip 3; the ptfe sheet of making is flattened on the chip bearing face of LED pedestal 1; then tin ball or tin cream are put into containing cavity 4; under secluding air or nitrogen atmosphere protection, preheat; allow the tin ball be melt into the plane; put chip 3 again; under the secluding air condition, melt tin, wait to solidify back chip 3 and just can be fixed on pedestal 1 loading end.
A kind of multicore sheet 3 integrated encapsulated LED shown in above Fig. 2-6 are specific embodiment of the utility model, the utility model substantive distinguishing features and progress have been embodied, can carry out the modification of aspects such as shape, specification to it according to the use needs of reality, seldom give unnecessary details at this.
Claims (8)
1. integrated encapsulated LED of multicore sheet, comprise a LED pedestal (1), be located at a plurality of led chips (3) on the pedestal (1) and connect the electric-conductor of chip (3), it is characterized in that: described pedestal (1) top is covered with argentum reflecting layer (7), the upper surface of described argentum reflecting layer (7) is the chip bearing face, and described chip bearing face is provided with the containing cavity (4) of a plurality of upward openings in order to grafting chip (3); The sidewall of described containing cavity (4) is the confined planes that limited chip (3) moves, and its bottom surface is the chip bearing face, and the soldering-tin layer (2) that chip (3) is fixed in the chip bearing face is received in the bottom of described containing cavity (4).
2. the integrated encapsulated LED of a kind of multicore sheet according to claim 1, it is characterized in that: described chip bearing face is covered with stator (6), described stator (6) is provided with a plurality of through holes that match with led chip (3), and described via bottoms is close to loading end and is formed described containing cavity (4).
3. the integrated encapsulated LED of a kind of multicore sheet according to claim 1 is characterized in that: described led chip loading end row is provided with a plurality of inner groovies that match with chip (3) as described containing cavity (4).
4. the integrated encapsulated LED of a kind of multicore sheet according to claim 3 is characterized in that: the confined planes of described containing cavity (4) is provided with 10 °-70 ° beam angle.
5. the integrated encapsulated LED of a kind of multicore sheet according to claim 1, it is characterized in that: row is provided with a plurality of containing cavities (4) that are made of end to end convex tendon (5) on the described chip bearing face, and the confined planes evagination of described containing cavity (4) is in the led chip loading end.
6. the integrated encapsulated LED of a kind of multicore sheet according to claim 5, it is characterized in that: the confined planes of described containing cavity (4) is a transparent area.
7. according to the integrated encapsulated LED of the described a kind of multicore sheet of the arbitrary claim of claim 4-6, it is characterized in that: described containing cavity (4) degree of depth is 30-70 μ m, and soldering-tin layer (2) highly is 5-20 μ m.
8. the integrated encapsulated LED of a kind of multicore sheet according to claim 7, it is characterized in that: the opening of described containing cavity (4) is rectangular.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201904578U CN201549507U (en) | 2009-07-28 | 2009-07-28 | LED integrated and encapsulated by multiple chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201904578U CN201549507U (en) | 2009-07-28 | 2009-07-28 | LED integrated and encapsulated by multiple chips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201549507U true CN201549507U (en) | 2010-08-11 |
Family
ID=42604686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201904578U Expired - Fee Related CN201549507U (en) | 2009-07-28 | 2009-07-28 | LED integrated and encapsulated by multiple chips |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201549507U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102364686A (en) * | 2011-10-09 | 2012-02-29 | 常熟市广大电器有限公司 | High-power LED integrated packaging structure |
| CN103182576A (en) * | 2011-12-28 | 2013-07-03 | 苏州世鼎电子有限公司 | Improved LED welding technique |
| CN107546310A (en) * | 2016-06-24 | 2018-01-05 | 首尔半导体株式会社 | Light emission diode package member |
| CN107591470A (en) * | 2017-08-16 | 2018-01-16 | 佛山市顺德区蚬华多媒体制品有限公司 | A kind of method for being used for precisely fixed LED chip |
-
2009
- 2009-07-28 CN CN2009201904578U patent/CN201549507U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102364686A (en) * | 2011-10-09 | 2012-02-29 | 常熟市广大电器有限公司 | High-power LED integrated packaging structure |
| CN103182576A (en) * | 2011-12-28 | 2013-07-03 | 苏州世鼎电子有限公司 | Improved LED welding technique |
| CN107546310A (en) * | 2016-06-24 | 2018-01-05 | 首尔半导体株式会社 | Light emission diode package member |
| CN107591470A (en) * | 2017-08-16 | 2018-01-16 | 佛山市顺德区蚬华多媒体制品有限公司 | A kind of method for being used for precisely fixed LED chip |
| CN107591470B (en) * | 2017-08-16 | 2019-06-21 | 佛山市顺德区蚬华多媒体制品有限公司 | A method of for precisely fixing LED chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201549507U (en) | LED integrated and encapsulated by multiple chips | |
| CN102612744A (en) | Electronic device submounts with thermally conductive vias and light emitting devices including the same | |
| EP3182472B1 (en) | Light source module | |
| CN103179801B (en) | The manufacture method of light-emitting device | |
| US20170167713A1 (en) | Light source module | |
| CN103579011A (en) | Package carrier and method for manufacturing the same | |
| CN101572285A (en) | Semiconductor device and method for fabricating the same | |
| CN109530838B (en) | Method for laser welding of power semiconductor chip | |
| CN102769087A (en) | LED (light-emitting diode) based on via packaging technique and manufacturing technology of LED | |
| CN102148213B (en) | Lead frame of high-power chip package structure and manufacturing method thereof | |
| CN105161609A (en) | Chip-level LED (Light Emitting Diode) light source module and manufacturing method thereof | |
| CN101330195A (en) | Method for sintering high-power semiconductor laser | |
| CN103474551A (en) | High-power light-emitting diode (LED) substrate and packaging method thereof | |
| CN100395897C (en) | Nitride device upside down mounting method | |
| EP3116038A1 (en) | Light source module, fabrication method therefor, and lighting device including the same | |
| JP2008060330A (en) | Element mounting circuit-board, and luminescent device using same | |
| CN104051603A (en) | Manufacturing technology of LED lamp strip capable of emitting light from two sides | |
| CN102280555A (en) | Light-emitting diode and manufacturing method thereof | |
| CN101807658B (en) | High power LED encapsulating method | |
| CN202120897U (en) | High power chip packaging structure and lead frame thereof | |
| KR101841341B1 (en) | Lighting source module, fabrication method therefor, and lighting device comprising the same | |
| JP2011109071A (en) | Method of manufacturing light emitting diode package | |
| CN205845950U (en) | A kind of COB light source modular structure substrate of flip LED chips | |
| CN201732809U (en) | Encapsulating structure of LED lighting source | |
| CN106287496A (en) | LED light source component, LED photovoltaic integration module and LED spotlight |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100811 Termination date: 20110728 |