CN105161609A - Chip-level LED (Light Emitting Diode) light source module and manufacturing method thereof - Google Patents
Chip-level LED (Light Emitting Diode) light source module and manufacturing method thereof Download PDFInfo
- Publication number
- CN105161609A CN105161609A CN201510617715.6A CN201510617715A CN105161609A CN 105161609 A CN105161609 A CN 105161609A CN 201510617715 A CN201510617715 A CN 201510617715A CN 105161609 A CN105161609 A CN 105161609A
- Authority
- CN
- China
- Prior art keywords
- chip
- light source
- led light
- scale led
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 230000003287 optical effect Effects 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims description 38
- 238000003825 pressing Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 22
- 238000007493 shaping process Methods 0.000 claims description 22
- 229910002601 GaN Inorganic materials 0.000 claims description 21
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 239000002390 adhesive tape Substances 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 6
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 4
- 239000004814 polyurethane Substances 0.000 claims description 4
- 229920002635 polyurethane Polymers 0.000 claims description 4
- 229910017944 Ag—Cu Inorganic materials 0.000 claims description 3
- 235000017060 Arachis glabrata Nutrition 0.000 claims description 3
- 244000105624 Arachis hypogaea Species 0.000 claims description 3
- 235000010777 Arachis hypogaea Nutrition 0.000 claims description 3
- 235000018262 Arachis monticola Nutrition 0.000 claims description 3
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 3
- 229910016334 Bi—In Inorganic materials 0.000 claims description 3
- 235000011511 Diospyros Nutrition 0.000 claims description 3
- 244000236655 Diospyros kaki Species 0.000 claims description 3
- 229910020836 Sn-Ag Inorganic materials 0.000 claims description 3
- 229910020888 Sn-Cu Inorganic materials 0.000 claims description 3
- 229910020994 Sn-Zn Inorganic materials 0.000 claims description 3
- 229910020988 Sn—Ag Inorganic materials 0.000 claims description 3
- 229910019204 Sn—Cu Inorganic materials 0.000 claims description 3
- 229910009069 Sn—Zn Inorganic materials 0.000 claims description 3
- 229910009071 Sn—Zn—Bi Inorganic materials 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 238000007731 hot pressing Methods 0.000 claims description 3
- 235000020232 peanut Nutrition 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 239000000084 colloidal system Substances 0.000 abstract description 2
- 230000001795 light effect Effects 0.000 abstract 1
- IYZWUWBAFUBNCH-UHFFFAOYSA-N 2,6-dichlorobiphenyl Chemical compound ClC1=CC=CC(Cl)=C1C1=CC=CC=C1 IYZWUWBAFUBNCH-UHFFFAOYSA-N 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a chip-level LED (Light Emitting Diode) light source module and a manufacturing method thereof. The chip-level LED light source module comprises a PCB (Printed Circuit Board), at least one chip-level LED light source, a cofferdam and a primary optical element; the chip-level LED light source is arranged on the PCB and electrically connected with the PCB; the cofferdam is arranged on the PCB, connected with the side wall of the chip-level LED light source and used for surrounding the side wall of the chip-level LED light source; and the primary optical element is arranged on the cofferdam. The chip-level LED light source module has good mechanical strength, prevents external colloid from being easily damaged in application, and has good heat conductivity and high light effect.
Description
Technical field
The invention belongs to LED technology field, be specifically related to a kind of chip-scale LED light source module and preparation method thereof.
Background technology
White-light LED chip is the LED chip that can directly emit white light adopting ChipScalePackage (hereinafter referred to as " CSP ") technology to realize, such chip has that volume is little, lighting angle is large, can resistance to large driven current density, low cost of manufacture, facilitate the advantages such as downstream client's Design of Luminaires.
The common configuration feature of current LED white chip comprises: flip chip structure, and electrode is arranged on bottom, positive upper surface and 4 equal coating fluorescent powders in side.The phosphor powder layer of positive upper surface and four sides generally adopts the flourescent sheet technique of Molding and pressing semi-solid preparation to realize, and the phosphor powder layer of positive upper surface and four sides is the integrated structures of same material.
But there is following defect in the LED white chip of this structure: one, be subject to easily being subjected under extraneous mechanism destroy; Two, unfavorable heat conduction.
The patent No. is that US8273587B2 discloses one bottom filler between chip and substrate, reinforces the adhesion of chip and substrate.Publication number is that US20140138725A1 discloses a kind of flip-chip and is attached on fluorescence membrane, and inserts at chip chamber the method that reflective glue makes chip-scale light source.
Summary of the invention
The object of the present invention is to provide a kind of chip-scale LED light source module and preparation method thereof, this chip-scale LED light source module has good mechanical strength, thus avoid the generation subjecting to situation about destroying at application process peripheral colloid, and good heat conductivity, light efficiency are high.
In order to realize foregoing invention object, the technical solution adopted in the present invention is as follows:
A kind of chip-scale LED light source module, comprises a PCB, at least one chip-scale LED light source, cofferdam and an optical element; Described chip-scale LED light source is arranged in described PCB, is electrically connected with described PCB; Described cofferdam is arranged in described PCB, is connected with the sidewall of described chip-scale LED light source, in order to surround the sidewall of described chip-scale LED light source; A described optical element is arranged on described cofferdam.
As a kind of specific embodiment, described cofferdam is made up of reflectorized material.
Further, described reflectorized material is the organosilicon that reflectivity is greater than 95%.
Further, described cofferdam adopts mold injects, the moulding process of pressing or mold injects and pressing combination makes shaping.
As a kind of specific embodiment, described chip-scale LED light source includes flip type LED chip, the light conversion layer be arranged on described flip type LED chip.
Wherein, described flip type LED chip comprises epitaxial substrate layer, be grown on the n type gallium nitride layer of described epitaxial substrate layer upper surface, be grown on the luminescent layer of n type gallium nitride layer segment upper surface, and be grown on the N-type ohmic contact layer of n type gallium nitride layer segment upper surface, also comprise the P type gallium nitride layer being grown on luminescent layer upper surface, be grown on the P type ohmic contact layer of P type gallium nitride layer portion of upper surface, at P type gallium nitride layer, P type ohmic contact layer, n type gallium nitride layer and N-type ohmic contact layer upper surface are provided with insulating barrier, the insulating barrier corresponding to P type ohmic contact layer upper surface offers the first through hole, the insulating barrier corresponding to N-type ohmic contact layer upper surface offers the second through hole, surface is provided with P electrode bonded layer disconnected from each other and N electrode bonded layer on the insulating layer, described P electrode bonded layer runs through the first through hole and is electrically connected with P type ohmic contact layer, described N electrode bonded layer runs through the second through hole and is electrically connected with N-type ohmic contact layer.
Further, described light conversion layer is arranged on the top of described epitaxial substrate layer; Described cofferdam is the reflective cup-shaped of column or class.
Or described light conversion layer is arranged on the top of described epitaxial substrate layer and the sidewall of flip LED chips; The extension that described cofferdam includes side round part, is connected with described side round part; Described extension is arranged on the bottom junctions of described chip-scale LED light source and described PCB; Described side round part is connected with the sidewall of described chip-scale LED light source; Described side round part is the reflective cup-shaped of column or class.
As a kind of specific embodiment, a described optical element is made up of transparent adhesive tape material, and described transparent adhesive tape material comprises one or more combinations in organosilicon, epoxy, acrylic acid, polyurethane; A described optical element is by the mode automatic moulding of a glue; Or by the mode of mold injects, or the mode of mould pressing, or the compound mode of mold injects and mould pressing is shaping.
As a kind of specific embodiment, the shape of a described optical element is the one in hemisphere, square, oval, Fresnel shape, honeycombed, peanut shape, taper shape, regular hexagon, dried persimmon shape.
Second aspect present invention provides a kind of manufacture method of chip-scale LED light source module mentioned above, comprises the steps:
(1), adopt the welding method of Reflow Soldering and/or hot pressing ultrasonic bond, prefabricated chip-scale LED light source is welded in PCB;
(2), reflectorized material is injected at the sidewall of chip-scale LED light source, and adopt the method for mold injects, pressing or mold injects and pressing combination, make described reflectorized material shaping at the sidewall of described chip-scale LED light source, form one in order to surround the cofferdam of the sidewall of described chip-scale LED light source;
Or all inject reflectorized material at the sidewall of chip-scale LED light source and the bottom junctions of chip-scale LED light source and described PCB, and adopt the method for mold injects, pressing or mold injects and pressing combination, make shaping at the sidewall of chip-scale LED light source and chip-scale LED light source and described PCB the bottom junctions of described reflectorized material shaping, form one in order to surround the sidewall of described chip-scale LED light source and to fill the cofferdam in described bottom junctions space;
(3), on cofferdam, inject transparent adhesive tape material, and adopt the method for some glue, mold injects, mould pressing or mold injects and mould pressing combination, make described transparent adhesive tape material shaping on described cofferdam, form an optical element.
Further, the material of solder that described chip-scale LED light source welds with described PCB is one or more in Au-Sn, Sn-Ag-Cu, Sn-Ag, Sn-Cu, Sn-Ag-Bi, Sn-Ag-Bi-In, Sn-Zn, Sn-Zn-Bi.
Technical scheme provided by the invention has following beneficial effect:
Chip-scale LED light source module of the present invention and preparation method thereof, after chip-scale light source is combined with pcb board, further add luminescent material in junction, and shaping formation cofferdam, the luminous efficiency of White-light LED chip, heat conductivility can not only be promoted, and make chip-scale LED light source module have good mechanical strength, can be good at solving the problem that destruction occurs because being subject to outside mechanical shock chip-scale white light LEDs.
Further, can in cofferdam forming optical lens, realize an optical element, realize luminous intensity distribution.
Accompanying drawing explanation
Fig. 1 is the structural representation of flip type LED chip;
Fig. 2 is the structural representation of the first embodiment of chip-scale LED light source;
Chip-scale LED light source in Fig. 2 is welded on the structural representation after in PCB by Fig. 3;
Fig. 4 is the structural representation on the basis of Fig. 3 behind shaping cofferdam;
Fig. 5 is the structural representation on the basis of Fig. 4 after a shaping optical element, is also the structural representation of the first embodiment of chip-scale LED light source module;
Fig. 6 is the structural representation of the second embodiment of chip-scale LED light source module;
Fig. 7 is the structural representation of the third embodiment of chip-scale LED light source module;
Fig. 8 is the structural representation of the second embodiment of chip-scale LED light source;
Fig. 9 is the structural representation of the 4th kind of embodiment of chip-scale LED light source module;
Embodiment
In order to understand object of the present invention, characteristic sum effect fully, be described further below with reference to the technique effect of accompanying drawing to design of the present invention, concrete structure and generation.
Embodiment 1
As shown in Figure 5, for the present embodiment provides a kind of chip-scale LED light source module 1, a PCB 10, at least one chip-scale LED light source 20, cofferdam 30 and an optical element 40 is comprised; Described chip-scale LED light source 20 is arranged in described PCB 10, is electrically connected with described PCB 10; Described cofferdam 30 is arranged in described PCB 10, is connected with the sidewall of described chip-scale LED light source 20, in order to surround the sidewall of described chip-scale LED light source 20; A described optical element 40 is arranged on described cofferdam 30.
Wherein, described PCB 10 comprises one in aluminum-base printing circuit, ceramic base circuit board, macromolecule flexible PCB etc. or compound circuit board.
As shown in Figure 2, be the structural representation of the present embodiment chip-scale LED light source 20.Described chip-scale LED light source 20 includes flip type LED chip 21, the light conversion layer 22 be arranged on described flip type LED chip 21.
Wherein, as shown in Figure 1 (hereinafter alleged " upper surface " is all Figure 1 shows that standard), described flip type LED chip 21 comprises epitaxial substrate layer 201, be grown on the n type gallium nitride layer 202 of described epitaxial substrate layer 201 upper surface, be grown on the luminescent layer 203 of n type gallium nitride layer 202 portion of upper surface, and be grown on the N-type ohmic contact layer 207 of n type gallium nitride layer 202 portion of upper surface, also comprise the P type gallium nitride layer 204 being grown on luminescent layer 203 upper surface, be grown on the P type ohmic contact layer 205 of P type gallium nitride layer 204 portion of upper surface, at P type gallium nitride layer 204, P type ohmic contact layer 205, n type gallium nitride layer 202 and N-type ohmic contact layer 207 upper surface are provided with insulating barrier 206, the insulating barrier 206 corresponding to P type ohmic contact layer 205 upper surface offers the first through hole 210, the insulating barrier 206 corresponding to N-type ohmic contact layer 207 upper surface offers the second through hole 211, P electrode bonded layer 208 disconnected from each other and N electrode bonded layer 209 is provided with at insulating barrier 206 upper surface, described P electrode bonded layer 408 runs through the first through hole 210 and is electrically connected with P type ohmic contact layer 205, described N electrode bonded layer 209 runs through the second through hole 211 and is electrically connected with N-type ohmic contact layer 207.
Described light conversion layer 22 is arranged on top and the sidewall of described flip LED chips 21, particularly, described light conversion layer 22 is arranged on the top of described epitaxial substrate layer 201 and the sidewall (alleged " top " is all Figure 2 shows that standard) of flip LED chips 21.
As shown in Figure 4, described cofferdam 30 extension 302 that includes side round part 301, be connected with described side round part 301; Described extension 302 is arranged on the bottom junctions of described chip-scale LED light source 20 and described PCB 10, its position as shown in Figure 3, below the light conversion layer 22 of flip LED chips 21 side-walls, and the gap between PCB 10.Described side round part 301 is connected with the sidewall of described chip-scale LED light source 10; Described side round part 301 is in the reflective cup-shaped of class.Wherein, as shown in Figure 6, shown side round part 301 also can be column.By arranging cofferdam, chip-scale LED light source and pcb board are combined closely, thus improve heat conduction efficiency.
Described cofferdam 30 is made up of reflectorized material, and it is shaping that described cofferdam 30 adopts the compound mode of mold injects, pressing or mold injects and pressing to make.Preferably, described reflectorized material is in white or milky.
Preferably, described reflectorized material is the organosilicon reflectorized material that reflectivity is greater than 95%.
A described optical element 40 is made up of transparent adhesive tape material, and described transparent adhesive tape material comprises one or more combinations in organosilicon, epoxy, acrylic acid, polyurethane; A described optical element 40 is by the mode automatic moulding of some glue; Or by the mode of mold injects, or the mode of mould pressing, or the compound mode of mold injects and mould pressing is shaping.
Preferably, the shape of a described optical element 40 is hemisphere.
Embodiment 2
The embodiment of the present invention 2 is substantially identical with the technical scheme of embodiment 1, and its distinguishing characteristics is, as shown in Figure 7, the shape of a described optical element 40 is peanut shape.Wherein, the shape of a described optical element can also be the shapes such as square, oval, Fresnel shape, honeycombed, taper shape, regular hexagon, dried persimmon shape.
Embodiment 3
The embodiment of the present invention 3 is substantially identical with the technical scheme of embodiment 1,2, and its distinguishing characteristics is: as shown in Figure 8, and embodiment 2 only arranges described light conversion layer 22 above described flip type LED chip.Specifically be arranged on the top of the epitaxial substrate layer of described flip type LED chip.
As shown in Figure 9, described cofferdam 30 has only included side round part 301; Described side round part 301 is connected with the sidewall of described chip-scale LED light source 20; Described side round part 301 is in column or the reflective cup-shaped of class.
Embodiment 4
The manufacture method of chip-scale LED light source module 1 of the present invention, specifically comprises the following steps:
(1), adopt the welding method of Reflow Soldering and/or hot pressing ultrasonic bond, prefabricated chip-scale LED light source 20 is welded in PCB 10; Described chip-scale LED light source 20 includes flip type LED chip 21, the light conversion layer 22 be arranged on described flip type LED chip 21.Wherein said PCB 10 is one or compound circuit board etc. in prefabricated aluminum-base printing circuit, ceramic base circuit board, macromolecule flexible PCB etc.As shown in Figure 3, the schematic diagram be welded on by prefabricated chip-scale LED light source 20 in PCB 10 is.
(2), when being only provided with light conversion layer 22 above described flip type LED chip 21, reflectorized material is injected at the sidewall of chip-scale LED light source 20, and adopt the method for mold injects, pressing or mold injects and pressing combination, make described reflectorized material shaping at the sidewall of described chip-scale LED light source 20, form one in order to surround the cofferdam 30 of the sidewall of described chip-scale LED light source.
When above described flip type LED chip 21 and when the sidewall of flip LED chips 21 is provided with light conversion layer 22, at the sidewall of chip-scale LED light source 20, and chip-scale LED light source 20 all injects reflectorized material with the bottom junctions of described PCB 10, and adopt mold injects, pressing, or the method for mold injects and pressing combination, make described reflectorized material shaping at the sidewall of chip-scale LED light source 20, and chip-scale LED light source 20 is shaping with the bottom junctions of described PCB 10, form one in order to surround the sidewall of described chip-scale LED light source 20 and to fill the cofferdam 30 in described bottom junctions space, as shown in Figure 4, the schematic diagram all forming cofferdam 30 at the sidewall of chip-scale LED light source 20 and described bottom junctions is.
(3), on cofferdam 30 inject transparent adhesive tape material, and adopt the method for some glue, mold injects, mould pressing or mold injects and mould pressing combination, make described transparent adhesive tape material shaping on described cofferdam 30, form an optical element 40.Described transparent adhesive tape material comprises one or more combinations in organosilicon, epoxy, acrylic acid, polyurethane.As shown in Figure 5, the structural representation after a shaping optical element 40 on cofferdam 30 is.
Wherein, the material of solder that described chip-scale LED light source 20 welds with described PCB 10 comprise in Au-Sn, Sn-Ag-Cu, Sn-Ag, Sn-Cu, Sn-Ag-Bi, Sn-Ag-Bi-In, Sn-Zn, Sn-Zn-Bi etc. one or more.
It should be noted that, the present invention is the technical scheme carrying out on the basis of existing technology improving, and not specified part in literary composition is common practise or the prior art of the art, repeats no longer one by one this.
The above, it is only preferred embodiment of the present invention, not any pro forma restriction is done to the present invention, therefore all contents not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (10)
1. a chip-scale LED light source module, is characterized in that, comprising:
One PCB, at least one chip-scale LED light source, cofferdam and an optical element;
Described chip-scale LED light source is arranged in described PCB, is electrically connected with described PCB;
Described cofferdam is arranged in described PCB, is connected with the sidewall of described chip-scale LED light source, in order to surround the sidewall of described chip-scale LED light source;
A described optical element is arranged on described cofferdam.
2. chip-scale LED light source module according to claim 1, it is characterized in that, described cofferdam is made up of reflectorized material.
3. chip-scale LED light source module according to claim 2, is characterized in that, described reflectorized material is the organosilicon that reflectivity is greater than 95%.
4. chip-scale LED light source module according to claim 3, is characterized in that, described cofferdam adopts mold injects, the moulding process of pressing or mold injects and pressing combination makes shaping.
5. chip-scale LED light source module according to claim 1, is characterized in that, described chip-scale LED light source includes flip type LED chip, the light conversion layer be arranged on described flip type LED chip;
Wherein, described flip type LED chip comprises epitaxial substrate layer, be grown on the n type gallium nitride layer of described epitaxial substrate layer upper surface, be grown on the luminescent layer of n type gallium nitride layer segment upper surface, and be grown on the N-type ohmic contact layer of n type gallium nitride layer segment upper surface, also comprise the P type gallium nitride layer being grown on luminescent layer upper surface, be grown on the P type ohmic contact layer of P type gallium nitride layer portion of upper surface, at P type gallium nitride layer, P type ohmic contact layer, n type gallium nitride layer and N-type ohmic contact layer upper surface are provided with insulating barrier, the insulating barrier corresponding to P type ohmic contact layer upper surface offers the first through hole, the insulating barrier corresponding to N-type ohmic contact layer upper surface offers the second through hole, surface is provided with P electrode bonded layer disconnected from each other and N electrode bonded layer on the insulating layer, described P electrode bonded layer runs through the first through hole and is electrically connected with P type ohmic contact layer, described N electrode bonded layer runs through the second through hole and is electrically connected with N-type ohmic contact layer.
6. chip-scale LED light source module according to claim 5, it is characterized in that, described light conversion layer is arranged on the top of described epitaxial substrate layer; Described cofferdam is the reflective cup-shaped of column or class;
Or described light conversion layer is arranged on the top of described epitaxial substrate layer and the sidewall of flip LED chips; The extension that described cofferdam includes side round part, is connected with described side round part; Described extension is arranged on the bottom junctions of described chip-scale LED light source and described PCB; Described side round part is connected with the sidewall of described chip-scale LED light source; Described side round part is the reflective cup-shaped of column or class.
7. chip-scale LED light source module according to claim 1, is characterized in that: a described optical element is made up of transparent adhesive tape material, and described transparent adhesive tape material comprises one or more combinations in organosilicon, epoxy, acrylic acid, polyurethane; A described optical element is by the mode automatic moulding of a glue; Or by the mode of mold injects, or the mode of mould pressing, or the compound mode of mold injects and mould pressing is shaping.
8. chip-scale LED light source module according to claim 1, is characterized in that: the shape of a described optical element is the one in hemisphere, square, oval, Fresnel shape, honeycombed, peanut shape, taper shape, regular hexagon, dried persimmon shape.
9. make a method for chip-scale LED light source module as described in any one of claim 1 ~ 8, it is characterized in that, comprise the steps:
(1), adopt the welding method of Reflow Soldering and/or hot pressing ultrasonic bond, prefabricated chip-scale LED light source is welded in PCB;
(2), reflectorized material is injected at the sidewall of chip-scale LED light source, and adopt the method for mold injects, pressing or mold injects and pressing combination, make described reflectorized material shaping at the sidewall of described chip-scale LED light source, form one in order to surround the cofferdam of the sidewall of described chip-scale LED light source;
Or all inject reflectorized material at the sidewall of chip-scale LED light source and the bottom junctions of chip-scale LED light source and described PCB, and adopt the method for mold injects, pressing or mold injects and pressing combination, make shaping at the sidewall of chip-scale LED light source and chip-scale LED light source and described PCB the bottom junctions of described reflectorized material shaping, form one in order to surround the sidewall of described chip-scale LED light source and to fill the cofferdam in described bottom junctions space;
(3), on cofferdam, inject transparent adhesive tape material, and adopt the method for some glue, mold injects, mould pressing or mold injects and mould pressing combination, make described transparent adhesive tape material shaping on described cofferdam, form an optical element.
10. method according to claim 9, is characterized in that: the material of the solder that described chip-scale LED light source welds with described PCB is one or more in Au-Sn, Sn-Ag-Cu, Sn-Ag, Sn-Cu, Sn-Ag-Bi, Sn-Ag-Bi-In, Sn-Zn, Sn-Zn-Bi.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510617715.6A CN105161609B (en) | 2015-09-24 | 2015-09-24 | A kind of chip-scale LED light source module and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510617715.6A CN105161609B (en) | 2015-09-24 | 2015-09-24 | A kind of chip-scale LED light source module and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105161609A true CN105161609A (en) | 2015-12-16 |
| CN105161609B CN105161609B (en) | 2018-06-12 |
Family
ID=54802418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510617715.6A Active CN105161609B (en) | 2015-09-24 | 2015-09-24 | A kind of chip-scale LED light source module and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105161609B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025049A (en) * | 2016-07-14 | 2016-10-12 | 东莞中之光电股份有限公司 | Light-increasing CSP-standard LED packaging process and making method thereof |
| CN106051505A (en) * | 2016-07-14 | 2016-10-26 | 东莞中之光电股份有限公司 | Packaging structure of combined type LED modulator tube |
| TWI583028B (en) * | 2016-02-05 | 2017-05-11 | 行家光電股份有限公司 | Light emitting device with beam shaping structure and manufacturing method of the same |
| CN106784258A (en) * | 2017-03-15 | 2017-05-31 | 厦门大学 | Wafer-level packaging LED |
| CN107768503A (en) * | 2017-10-25 | 2018-03-06 | 江苏稳润光电科技有限公司 | A kind of Lamp white lights product encapsulating structure |
| CN109804476A (en) * | 2017-09-15 | 2019-05-24 | 厦门市三安光电科技有限公司 | A kind of White-light LED package structure and white light source system |
| US10797209B2 (en) | 2016-02-05 | 2020-10-06 | Maven Optronics Co., Ltd. | Light emitting device with beam shaping structure and manufacturing method of the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014091914A1 (en) * | 2012-12-10 | 2014-06-19 | シチズンホールディングス株式会社 | Led device and manufacturing method thereof |
| CN104022207A (en) * | 2014-05-23 | 2014-09-03 | 晶科电子（广州）有限公司 | White LED chip and manufacturing method thereof |
| CN104167482A (en) * | 2014-07-29 | 2014-11-26 | 晶科电子（广州）有限公司 | White-light LED chip and manufacturing method for white-light LED chip |
| CN204102899U (en) * | 2014-03-25 | 2015-01-14 | 东芝照明技术株式会社 | Light emitting module |
| CN205039178U (en) * | 2015-09-24 | 2016-02-17 | 晶科电子（广州）有限公司 | Chip level LED light source module |
-
2015
- 2015-09-24 CN CN201510617715.6A patent/CN105161609B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014091914A1 (en) * | 2012-12-10 | 2014-06-19 | シチズンホールディングス株式会社 | Led device and manufacturing method thereof |
| CN204102899U (en) * | 2014-03-25 | 2015-01-14 | 东芝照明技术株式会社 | Light emitting module |
| CN104022207A (en) * | 2014-05-23 | 2014-09-03 | 晶科电子（广州）有限公司 | White LED chip and manufacturing method thereof |
| CN104167482A (en) * | 2014-07-29 | 2014-11-26 | 晶科电子（广州）有限公司 | White-light LED chip and manufacturing method for white-light LED chip |
| CN205039178U (en) * | 2015-09-24 | 2016-02-17 | 晶科电子（广州）有限公司 | Chip level LED light source module |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI583028B (en) * | 2016-02-05 | 2017-05-11 | 行家光電股份有限公司 | Light emitting device with beam shaping structure and manufacturing method of the same |
| US10797209B2 (en) | 2016-02-05 | 2020-10-06 | Maven Optronics Co., Ltd. | Light emitting device with beam shaping structure and manufacturing method of the same |
| CN106025049A (en) * | 2016-07-14 | 2016-10-12 | 东莞中之光电股份有限公司 | Light-increasing CSP-standard LED packaging process and making method thereof |
| CN106051505A (en) * | 2016-07-14 | 2016-10-26 | 东莞中之光电股份有限公司 | Packaging structure of combined type LED modulator tube |
| CN106025049B (en) * | 2016-07-14 | 2018-08-24 | 东莞中之光电股份有限公司 | The type that adds lustre to CSP standard LED package techniques and preparation method thereof |
| CN106784258A (en) * | 2017-03-15 | 2017-05-31 | 厦门大学 | Wafer-level packaging LED |
| CN106784258B (en) * | 2017-03-15 | 2018-11-09 | 厦门大学 | Wafer-level packaging LED |
| CN109804476A (en) * | 2017-09-15 | 2019-05-24 | 厦门市三安光电科技有限公司 | A kind of White-light LED package structure and white light source system |
| CN107768503A (en) * | 2017-10-25 | 2018-03-06 | 江苏稳润光电科技有限公司 | A kind of Lamp white lights product encapsulating structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105161609B (en) | 2018-06-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105161609A (en) | Chip-level LED (Light Emitting Diode) light source module and manufacturing method thereof | |
| US20210126175A1 (en) | Packaging photon building blocks with top side connections and interconnect structure | |
| US20060262533A1 (en) | Modular light emitting diode | |
| US20140001504A1 (en) | Light emitting diode package and method for manufacturing the same | |
| CN102185090B (en) | Luminescent device adopting COB (chip on board) packaging and manufacturing method thereof | |
| CN101621101A (en) | LED and production method thereof | |
| CN102694102B (en) | Light emitting diode packaging structure, manufacturing method thereof, and light source apparatus | |
| CN103943616B (en) | LED light emitting device | |
| US8970053B2 (en) | Semiconductor package having light-emitting-diode solder-bonded on first and second conductive pads separated by at least 75 UM | |
| CN1129968C (en) | Packaging method for LED | |
| CN201868429U (en) | Embedded-type encapsulating structure of luminous diode | |
| CN204857720U (en) | LED filament light source flip -chip structure | |
| CN205039178U (en) | Chip level LED light source module | |
| CN1417868A (en) | Multiple-chip package structure of LED chip | |
| CN204118067U (en) | Directly be packaged in the LED chip encapsulation architecture of radiator | |
| CN106356437B (en) | A kind of white light LED packaging device and preparation method thereof | |
| CN203218334U (en) | LED bulb lamp packaging structure | |
| CN104051603A (en) | Manufacturing technology of LED lamp strip capable of emitting light from two sides | |
| CN103822143A (en) | LED (light emitting diode) street lamp light source module with silicon substrates | |
| CN102280555A (en) | Light-emitting diode and manufacturing method thereof | |
| CN202205814U (en) | Light emitting diode device | |
| CN201616432U (en) | LED multi-chip integrated packaging component | |
| CN203521458U (en) | Flip-chip LED chip capable of emitting light omnibearingly | |
| CN207664061U (en) | A kind of convex LED substrate encapsulating structure | |
| CN202058786U (en) | Luminescent device adopting COB packaging |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 511458 Nansha District, Guangzhou, South Ring Road, No. 33, No. Applicant after: GUANGDONG APT ELECTRONICS LTD. Address before: 511458 Nansha District, Guangzhou, South Ring Road, No. 33, No. Applicant before: APT (Guangzhou) Electronics Ltd. |
|
| COR | Change of bibliographic data | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |