CN205039178U - Chip level LED light source module - Google Patents
Chip level LED light source module Download PDFInfo
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- CN205039178U CN205039178U CN201520748455.1U CN201520748455U CN205039178U CN 205039178 U CN205039178 U CN 205039178U CN 201520748455 U CN201520748455 U CN 201520748455U CN 205039178 U CN205039178 U CN 205039178U
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Abstract
The utility model discloses a chip level LED light source module, this chip level LED light source module include a PCB circuit board, at least one chip level LED light source, are used for surrounding cofferdam and an optical element of the lateral wall of chip level LED light source, chip level LED light source sets up on the PCB circuit board, with PCB circuit board electrically connected, the cofferdam sets up on the PCB circuit board, with the lateral wall of chip level LED light source is connected, one time optical element sets up on the cofferdam. The utility model discloses make chip level LED light source module have fine mechanical strength to avoided in the application process outside colloid easily to suffer the emergence of the circumstances of destruction, and the heat conductivility is good, the light efficiency is high.
Description
Technical field
The utility model belongs to LED technology field, is specifically related to a kind of chip-scale LED light source module.
Background technology
White-light LED chip is the LED chip that can directly emit white light adopting ChipScalePackage (hereinafter referred to as " CSP ") technology to realize, such chip has that volume is little, lighting angle is large, can resistance to large driven current density, low cost of manufacture, facilitate the advantages such as downstream client's Design of Luminaires.
The common configuration feature of current LED white chip comprises: flip chip structure, and electrode is arranged on bottom, positive upper surface and 4 equal coating fluorescent powders in side.The phosphor powder layer of positive upper surface and four sides generally adopts the flourescent sheet technique of Molding and pressing semi-solid preparation to realize, and the phosphor powder layer of positive upper surface and four sides is the integrated structures of same material.
But there is following defect in the LED white chip of this structure: one, be subject to easily being subjected under extraneous mechanism destroy; Two, unfavorable heat conduction.
The patent No. is that US8273587B2 discloses one bottom filler between chip and substrate, reinforces the adhesion of chip and substrate.Publication number is that US20140138725A1 discloses a kind of flip-chip and is attached on fluorescence membrane, and inserts at chip chamber the method that reflective glue makes chip-scale light source.
Utility model content
The purpose of this utility model is to provide a kind of chip-scale LED light source module, this chip-scale LED light source module has good mechanical strength, thus avoid the generation subjecting to situation about destroying at application process peripheral colloid, and good heat conductivity, light efficiency are high.
In order to realize above-mentioned utility model object, the technical scheme that the utility model adopts is as follows:
A kind of chip-scale LED light source module, comprise a PCB, at least one chip-scale LED light source, in order to surround cofferdam and an optical element of the sidewall of described chip-scale LED light source; Described chip-scale LED light source is arranged in described PCB, is electrically connected with described PCB; Described cofferdam is arranged in described PCB, is connected with the sidewall of described chip-scale LED light source; A described optical element is arranged on described cofferdam.
As a kind of specific embodiment, described cofferdam is made up of reflectorized material.
Further, the organosilicon reflectorized material that described cofferdam is greater than 95% by reflectivity is made.
Further, described cofferdam adopts mold injects, the moulding process of pressing or mold injects and pressing combination is arranged in described PCB.
As a kind of specific embodiment, described chip-scale LED light source includes flip type LED chip, the light conversion layer be arranged on described flip type LED chip.
Wherein, described flip type LED chip comprises epitaxial substrate layer, be grown on the n type gallium nitride layer of described epitaxial substrate layer upper surface, be grown on the luminescent layer of n type gallium nitride layer segment upper surface, and be grown on the N-type ohmic contact layer of n type gallium nitride layer segment upper surface, also comprise the P type gallium nitride layer being grown on luminescent layer upper surface, be grown on the P type ohmic contact layer of P type gallium nitride layer portion of upper surface, at P type gallium nitride layer, P type ohmic contact layer, n type gallium nitride layer and N-type ohmic contact layer upper surface are provided with insulating barrier, the insulating barrier corresponding to P type ohmic contact layer upper surface offers the first through hole, the insulating barrier corresponding to N-type ohmic contact layer upper surface offers the second through hole, surface is provided with P electrode bonded layer disconnected from each other and N electrode bonded layer on the insulating layer, described P electrode bonded layer runs through the first through hole and is electrically connected with P type ohmic contact layer, described N electrode bonded layer runs through the second through hole and is electrically connected with N-type ohmic contact layer.
Preferably, described light conversion layer is arranged on the top of described epitaxial substrate layer; Described cofferdam is the reflective cup-shaped of column or class.
Preferably, described light conversion layer is arranged on the top of described epitaxial substrate layer and the sidewall of flip LED chips; The extension that described cofferdam includes side round part, is connected with described side round part; Described extension is arranged on the bottom junctions of described chip-scale LED light source and described PCB; Described side round part is connected with the sidewall of described chip-scale LED light source; Described side round part is the reflective cup-shaped of column or class.
As a kind of specific embodiment, a described optical element is made up of transparent adhesive tape material, and described transparent adhesive tape material is the one in organosilicon, epoxy, acrylic acid, polyurethane; A described optical element is arranged on described cofferdam by the moulding process of some glue, mold injects, pressing or mold injects and pressing combination.
As a kind of specific embodiment, the shape of a described optical element is the one in hemisphere, square, oval, Fresnel shape, honeycombed, peanut shape, taper shape, regular hexagon, dried persimmon shape.
Further, the material of solder that described chip-scale LED light source welds with described PCB is the one in Au-Sn, Sn-Ag-Cu, Sn-Ag, Sn-Cu, Sn-Ag-Bi, Sn-Ag-Bi-In, Sn-Zn, Sn-Zn-Bi.
The technical scheme that the utility model provides has following beneficial effect:
Chip-scale LED light source module of the present utility model, after chip-scale light source is combined with pcb board, further add luminescent material in junction, and shaping formation cofferdam, the luminous efficiency of White-light LED chip, heat conductivility can not only be promoted, and make chip-scale LED light source module have good mechanical strength, can be good at solving the problem that destruction occurs because being subject to outside mechanical shock chip-scale white light LEDs.
Further, can in cofferdam forming optical lens, realize an optical element, realize luminous intensity distribution.
Accompanying drawing explanation
Fig. 1 is the structural representation of flip type LED chip;
Fig. 2 is the structural representation of the first embodiment of chip-scale LED light source;
Chip-scale LED light source in Fig. 2 is welded on the structural representation after in PCB by Fig. 3;
Fig. 4 is the structural representation on the basis of Fig. 3 behind shaping cofferdam;
Fig. 5 is the structural representation on the basis of Fig. 4 after a shaping optical element, is also the structural representation of the first embodiment of chip-scale LED light source module;
Fig. 6 is the structural representation of the second embodiment of chip-scale LED light source module;
Fig. 7 is the structural representation of the third embodiment of chip-scale LED light source module;
Fig. 8 is the structural representation of the second embodiment of chip-scale LED light source;
Fig. 9 is the structural representation of the 4th kind of embodiment of chip-scale LED light source module.
Embodiment
In order to understand the purpose of this utility model, characteristic sum effect fully, be described further below with reference to the technique effect of accompanying drawing to design of the present utility model, concrete structure and generation.
Embodiment 1
As shown in Figure 5, for the present embodiment provides a kind of chip-scale LED light source module 1, a PCB 10, at least one chip-scale LED light source 20, cofferdam 30 and an optical element 40 is comprised; Described chip-scale LED light source 20 is arranged in described PCB 10, is electrically connected with described PCB 10; Described cofferdam 30 is arranged in described PCB 10, is connected with the sidewall of described chip-scale LED light source 20, in order to surround the sidewall of described chip-scale LED light source 20; A described optical element 40 is arranged on described cofferdam 30.
Wherein, described PCB 10 comprises one in aluminum-base printing circuit, ceramic base circuit board, macromolecule flexible PCB etc. or compound circuit board.
As shown in Figure 2, be the structural representation of the present embodiment chip-scale LED light source 20.Described chip-scale LED light source 20 includes flip type LED chip 21, the light conversion layer 22 be arranged on described flip type LED chip 21.
Wherein, as shown in Figure 1 (hereinafter alleged " upper surface " is all Figure 1 shows that standard), described flip type LED chip 21 comprises epitaxial substrate layer 201, be grown on the n type gallium nitride layer 202 of described epitaxial substrate layer 201 upper surface, be grown on the luminescent layer 203 of n type gallium nitride layer 202 portion of upper surface, and be grown on the N-type ohmic contact layer 207 of n type gallium nitride layer 202 portion of upper surface, also comprise the P type gallium nitride layer 204 being grown on luminescent layer 203 upper surface, be grown on the P type ohmic contact layer 205 of P type gallium nitride layer 204 portion of upper surface, at P type gallium nitride layer 204, P type ohmic contact layer 205, n type gallium nitride layer 202 and N-type ohmic contact layer 207 upper surface are provided with insulating barrier 206, the insulating barrier 206 corresponding to P type ohmic contact layer 205 upper surface offers the first through hole 210, the insulating barrier 206 corresponding to N-type ohmic contact layer 207 upper surface offers the second through hole 211, P electrode bonded layer 208 disconnected from each other and N electrode bonded layer 209 is provided with at insulating barrier 206 upper surface, described P electrode bonded layer 408 runs through the first through hole 210 and is electrically connected with P type ohmic contact layer 205, described N electrode bonded layer 209 runs through the second through hole 211 and is electrically connected with N-type ohmic contact layer 207.
Described light conversion layer 22 is arranged on top and the sidewall of described flip LED chips 21, particularly, described light conversion layer 22 is arranged on the top of described epitaxial substrate layer 201 and the sidewall (alleged " top " is all Figure 2 shows that standard) of flip LED chips 21.
As shown in Figure 4, described cofferdam 30 extension 302 that includes side round part 301, be connected with described side round part 301; Described extension 302 is arranged on the bottom junctions of described chip-scale LED light source 20 and described PCB 10, its position as shown in Figure 3, below the light conversion layer 22 of flip LED chips 21 side-walls, and the gap between PCB 10.Described side round part 301 is connected with the sidewall of described chip-scale LED light source 10; Described side round part 301 is in the reflective cup-shaped of class.Wherein, as shown in Figure 6, shown side round part 301 also can be column.By arranging cofferdam, chip-scale LED light source and pcb board are combined closely, thus improve heat conduction efficiency.
Described cofferdam 30 is made up of reflectorized material, and it is shaping that described cofferdam 30 adopts the compound mode of mold injects, pressing or mold injects and pressing to make.Preferably, described reflectorized material is in white or milky.
Preferably, described reflectorized material is the organosilicon reflectorized material that reflectivity is greater than 95%.
A described optical element 40 is made up of transparent adhesive tape material, and described transparent adhesive tape material comprises one or more combinations in organosilicon, epoxy, acrylic acid, polyurethane; A described optical element 40 is by the mode automatic moulding of some glue; Or by the mode of mold injects, or the mode of mould pressing, or the compound mode of mold injects and mould pressing is shaping.
Preferably, the shape of a described optical element 40 is hemisphere.
Embodiment 2
The utility model embodiment 2 is substantially identical with the technical scheme of embodiment 1, and its distinguishing characteristics is, as shown in Figure 7, the shape of a described optical element 40 is peanut shape.Wherein, the shape of a described optical element can also be the shapes such as square, oval, Fresnel shape, honeycombed, taper shape, regular hexagon, dried persimmon shape.
Embodiment 3
The utility model embodiment 3 is substantially identical with the technical scheme of embodiment 1,2, and its distinguishing characteristics is: as shown in Figure 8, and embodiment 2 only arranges described light conversion layer 22 above described flip type LED chip.Specifically be arranged on the top of the epitaxial substrate layer of described flip type LED chip.
As shown in Figure 9, described cofferdam 30 has only included side round part 301; Described side round part 301 is connected with the sidewall of described chip-scale LED light source 20; Described side round part 301 is in column or the reflective cup-shaped of class.
Embodiment 4
The manufacture method of chip-scale LED light source module 1 of the present utility model, specifically comprises the following steps:
(1), adopt the welding method of Reflow Soldering and/or hot pressing ultrasonic bond, prefabricated chip-scale LED light source 20 is welded in PCB 10; Described chip-scale LED light source 20 includes flip type LED chip 21, the light conversion layer 22 be arranged on described flip type LED chip 21.Wherein said PCB 10 is one or compound circuit board etc. in prefabricated aluminum-base printing circuit, ceramic base circuit board, macromolecule flexible PCB etc.As shown in Figure 3, the schematic diagram be welded on by prefabricated chip-scale LED light source 20 in PCB 10 is.
(2), when being only provided with light conversion layer 22 above described flip type LED chip 21, reflectorized material is injected at the sidewall of chip-scale LED light source 20, and adopt the method for mold injects, pressing or mold injects and pressing combination, make described reflectorized material shaping at the sidewall of described chip-scale LED light source 20, form one in order to surround the cofferdam 30 of the sidewall of described chip-scale LED light source.
When above described flip type LED chip 21 and when the sidewall of flip LED chips 21 is provided with light conversion layer 22, at the sidewall of chip-scale LED light source 20, and chip-scale LED light source 20 all injects reflectorized material with the bottom junctions of described PCB 10, and adopt mold injects, pressing, or the method for mold injects and pressing combination, make described reflectorized material shaping at the sidewall of chip-scale LED light source 20, and chip-scale LED light source 20 is shaping with the bottom junctions of described PCB 10, form one in order to surround the sidewall of described chip-scale LED light source 20 and to fill the cofferdam 30 in described bottom junctions space, as shown in Figure 4, the schematic diagram all forming cofferdam 30 at the sidewall of chip-scale LED light source 20 and described bottom junctions is.
(3), on cofferdam 30 inject transparent adhesive tape material, and adopt the method for some glue, mold injects, mould pressing or mold injects and mould pressing combination, make described transparent adhesive tape material shaping on described cofferdam 30, form an optical element 40.Described transparent adhesive tape material comprises one or more combinations in organosilicon, epoxy, acrylic acid, polyurethane.As shown in Figure 5, the structural representation after a shaping optical element 40 on cofferdam 30 is.
Wherein, the material of solder that described chip-scale LED light source 20 welds with described PCB 10 comprise in Au-Sn, Sn-Ag-Cu, Sn-Ag, Sn-Cu, Sn-Ag-Bi, Sn-Ag-Bi-In, Sn-Zn, Sn-Zn-Bi etc. one or more.
It should be noted that, the utility model is the technical scheme carrying out on the basis of existing technology improving, and not specified part in literary composition is common practise or the prior art of the art, repeats no longer one by one this.
The above, it is only preferred embodiment of the present utility model, not any pro forma restriction is done to the utility model, therefore all contents not departing from technical solutions of the utility model, according to technical spirit of the present utility model to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belong in the scope of technical solutions of the utility model.
Claims (10)
1. a chip-scale LED light source module, is characterized in that, comprising:
One PCB, at least one chip-scale LED light source, in order to surround cofferdam and an optical element of the sidewall of described chip-scale LED light source;
Described chip-scale LED light source is arranged in described PCB, is electrically connected with described PCB; Described cofferdam is arranged in described PCB, is connected with the sidewall of described chip-scale LED light source; A described optical element is arranged on described cofferdam.
2. chip-scale LED light source module according to claim 1, it is characterized in that, described cofferdam is made up of reflectorized material.
3. chip-scale LED light source module according to claim 2, is characterized in that, the organosilicon reflectorized material that described cofferdam is greater than 95% by reflectivity is made.
4. chip-scale LED light source module according to claim 3, is characterized in that, described cofferdam adopts mold injects, the moulding process of pressing or mold injects and pressing combination is arranged in described PCB.
5. chip-scale LED light source module according to claim 1, is characterized in that, described chip-scale LED light source includes flip type LED chip, the light conversion layer be arranged on described flip type LED chip;
Wherein, described flip type LED chip comprises epitaxial substrate layer, be grown on the n type gallium nitride layer of described epitaxial substrate layer upper surface, be grown on the luminescent layer of n type gallium nitride layer segment upper surface, and be grown on the N-type ohmic contact layer of n type gallium nitride layer segment upper surface, also comprise the P type gallium nitride layer being grown on luminescent layer upper surface, be grown on the P type ohmic contact layer of P type gallium nitride layer portion of upper surface, at P type gallium nitride layer, P type ohmic contact layer, n type gallium nitride layer and N-type ohmic contact layer upper surface are provided with insulating barrier, the insulating barrier corresponding to P type ohmic contact layer upper surface offers the first through hole, the insulating barrier corresponding to N-type ohmic contact layer upper surface offers the second through hole, surface is provided with P electrode bonded layer disconnected from each other and N electrode bonded layer on the insulating layer, described P electrode bonded layer runs through the first through hole and is electrically connected with P type ohmic contact layer, described N electrode bonded layer runs through the second through hole and is electrically connected with N-type ohmic contact layer.
6. chip-scale LED light source module according to claim 5, it is characterized in that, described light conversion layer is arranged on the top of described epitaxial substrate layer; Described cofferdam is the reflective cup-shaped of column or class.
7. chip-scale LED light source module according to claim 5, is characterized in that, described light conversion layer is arranged on the top of described epitaxial substrate layer and the sidewall of flip LED chips; The extension that described cofferdam includes side round part, is connected with described side round part; Described extension is arranged on the bottom junctions of described chip-scale LED light source and described PCB; Described side round part is connected with the sidewall of described chip-scale LED light source; Described side round part is the reflective cup-shaped of column or class.
8. chip-scale LED light source module according to claim 1, is characterized in that: a described optical element is made up of transparent adhesive tape material, and described transparent adhesive tape material is the one in organosilicon, epoxy, acrylic acid, polyurethane; A described optical element is arranged on described cofferdam by the moulding process of some glue, mold injects, pressing or mold injects and pressing combination.
9. chip-scale LED light source module according to claim 1, is characterized in that: the shape of a described optical element is the one in hemisphere, square, oval, Fresnel shape, honeycombed, peanut shape, taper shape, regular hexagon, dried persimmon shape.
10. chip-scale LED light source module according to claim 1, is characterized in that: the material of the solder that described chip-scale LED light source welds with described PCB is the one in Au-Sn, Sn-Ag-Cu, Sn-Ag, Sn-Cu, Sn-Ag-Bi, Sn-Ag-Bi-In, Sn-Zn, Sn-Zn-Bi.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520748455.1U CN205039178U (en) | 2015-09-24 | 2015-09-24 | Chip level LED light source module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520748455.1U CN205039178U (en) | 2015-09-24 | 2015-09-24 | Chip level LED light source module |
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| CN205039178U true CN205039178U (en) | 2016-02-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161609A (en) * | 2015-09-24 | 2015-12-16 | 晶科电子（广州）有限公司 | Chip-level LED (Light Emitting Diode) light source module and manufacturing method thereof |
| CN105845790A (en) * | 2016-05-18 | 2016-08-10 | 厦门多彩光电子科技有限公司 | Flip chip LED chip packaging method and packaging groove mould |
| CN111653658A (en) * | 2020-06-09 | 2020-09-11 | 福建天电光电有限公司 | Preparation process of light-emitting diode with C-stage PIS solid fluorescent film |
-
2015
- 2015-09-24 CN CN201520748455.1U patent/CN205039178U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161609A (en) * | 2015-09-24 | 2015-12-16 | 晶科电子（广州）有限公司 | Chip-level LED (Light Emitting Diode) light source module and manufacturing method thereof |
| CN105161609B (en) * | 2015-09-24 | 2018-06-12 | 广东晶科电子股份有限公司 | A kind of chip-scale LED light source module and preparation method thereof |
| CN105845790A (en) * | 2016-05-18 | 2016-08-10 | 厦门多彩光电子科技有限公司 | Flip chip LED chip packaging method and packaging groove mould |
| CN105845790B (en) * | 2016-05-18 | 2018-08-31 | 厦门多彩光电子科技有限公司 | A kind of packaging method of flip LED chips |
| CN111653658A (en) * | 2020-06-09 | 2020-09-11 | 福建天电光电有限公司 | Preparation process of light-emitting diode with C-stage PIS solid fluorescent film |
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| C14 | Grant of patent or utility model | ||
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Address after: 511458 Nansha District, Guangzhou, South Ring Road, No. 33, No. Patentee after: GUANGDONG APT ELECTRONICS LTD. Address before: 511458 Nansha District, Guangzhou, South Ring Road, No. 33, No. Patentee before: APT (Guangzhou) Electronics Ltd. |