CN111653658A - Preparation process of light-emitting diode with C-stage PIS solid fluorescent film - Google Patents
Preparation process of light-emitting diode with C-stage PIS solid fluorescent film Download PDFInfo
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- CN111653658A CN111653658A CN202010516130.6A CN202010516130A CN111653658A CN 111653658 A CN111653658 A CN 111653658A CN 202010516130 A CN202010516130 A CN 202010516130A CN 111653658 A CN111653658 A CN 111653658A
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- 239000007787 solid Substances 0.000 title claims abstract description 91
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000003292 glue Substances 0.000 claims abstract description 93
- 238000007790 scraping Methods 0.000 claims abstract description 31
- 238000005520 cutting process Methods 0.000 claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000741 silica gel Substances 0.000 claims abstract description 27
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 27
- 238000004140 cleaning Methods 0.000 claims abstract description 20
- 239000000843 powder Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 10
- 239000000853 adhesive Substances 0.000 claims abstract description 9
- 230000001070 adhesive effect Effects 0.000 claims abstract description 9
- 239000003085 diluting agent Substances 0.000 claims abstract description 9
- 238000003756 stirring Methods 0.000 claims abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000003822 epoxy resin Substances 0.000 claims abstract description 7
- 238000004806 packaging method and process Methods 0.000 claims abstract description 7
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- 239000004332 silver Substances 0.000 claims abstract description 7
- 238000003466 welding Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 238000005187 foaming Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 6
- 230000007306 turnover Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a preparation process of a light-emitting diode with a C-stage PIS solid fluorescent film, which comprises the following steps: step S1, performing solid welding operation on the light-emitting chip and the bracket silver adhesive; step S2, mixing and vacuum-stirring epoxy resin A or B glue, diluent and glass powder, and then carrying out film scraping, primary baking, mold overturning, cutting, cleaning and secondary baking by using a film scraping device to form a C-stage PIS solid fluorescent film; step S3, point-bonding silica gel above the light-emitting chip, and then fixedly attaching the C-stage PIS solid fluorescent film on the bonding silica gel through a die bonder above the bonding silica gel; step S4, setting the baking temperature range at 60-170 ℃/1min-240min, baking the fixed C-stage PIS solid fluorescent film, and finally finishing the attachment of the C-stage PIS solid fluorescent film; and step S5, dispensing dam adhesive, then carrying out a packaging lens operation, and baking to finally form the light-emitting diode with the C-stage PIS solid fluorescent film. The invention improves the integral light-emitting rate of the light-emitting diode.
Description
Technical Field
The invention relates to the technical field of LED manufacturing, in particular to a preparation process of a light-emitting diode with a C-stage PIS solid fluorescent film.
Background
The B-stage fluorescent membrane is a semi-solidified solid fluorescent membrane formed by heating resin and a curing agent which react; the B-stage fluorescent film has low high temperature resistance, high price, low size cutting and utilization rate and low operability. C-stage PIS fluorescent film sheet: the method is characterized in that a solvent, a high-temperature resistant substance and a high-reflectivity substance are added into the traditional silica gel and mixed, and a semi-cured solid fluorescent membrane (PIS for short) is formed by heating, wherein the C-stage PIS has strong high-temperature resistance (high power for packaging the light-emitting diode), low price, capability of being cut according to the required size of the light-emitting diode, high utilization rate and strong operability.
The existing fluorescent membrane can only be manually operated, the consumption of glue and fluorescent powder is large, the fluorescent membrane can only be manually led in one cup by one cup, the membranes can only be manually replaced one by one, the position and the amount of the poured fluorescent glue cannot be fixed, the production efficiency is low, the operability is low, and the positions of the glue after membrane scraping are not uniform; in addition, the existing packaging structure of the light emitting diode generally packages a layer of fluorescent glue or silica gel with fluorescent powder on an LED chip; the resin and the curing agent react, and the fluorescent glue formed by heating or the silica gel with the fluorescent powder is expensive and has low cutting and utilization rate in size and operability; and the thickness of the existing fluorescent glue or silica gel with fluorescent powder is thicker, and the heat dissipation is slow.
Disclosure of Invention
In order to overcome the problems, the invention aims to provide a preparation process of a light-emitting diode with a C-stage PIS solid fluorescent film, which improves the overall light-emitting rate of the light-emitting diode and has quick heat dissipation.
The invention is realized by adopting the following scheme: a preparation process of a light-emitting diode with a C-stage PIS solid fluorescent film comprises the following steps:
step S1, performing solid welding operation on the light-emitting chip and the bracket silver adhesive;
step S2, mixing and vacuum-stirring epoxy resin A or B glue, diluent and glass powder, and then carrying out film scraping, primary baking, mold overturning, cutting, cleaning and secondary baking by using a film scraping device to form a C-stage PIS solid fluorescent film;
step S3, point-bonding silica gel above the light-emitting chip, and then fixedly attaching the C-stagePIS solid fluorescent film on the silica gel above the bonded silica gel through a die bonder;
step S4, setting the baking temperature range at 60-170 ℃/1min-240min, baking the fixed C-stage PIS solid fluorescent film, and finally finishing the attachment of the C-stage PIS solid fluorescent film;
and step S5, dispensing dam adhesive, then carrying out a packaging lens operation, and baking to finally form the light-emitting diode with the C-stage PIS solid fluorescent film.
Further, the glue scraping equipment comprises a working machine table, and a film conveying device, a scraper cleaning device and a cutting device are arranged in the working machine table; scraper device department is provided with the injecting glue device, be provided with position detection module and infrared height measurement device on the scraper device, step S2 further specifically is:
step S21, mixing and vacuum-stirring the epoxy resin A or B glue, the diluent and the glass powder, and then transmitting the mixture to a glue injection device, wherein the glue injection device controls the glue injection amount by using air pressure and quantitatively outputs the glue amount;
s22, after the glue injection device places the mixture on a glue scraping worktable of a scraper device, the mixture is operated through a scraper of the scraper device, the scraper can move left and right and up and down, the position of a scraping film is selected through a position detection module when the film scraping sheet is operated, and the thickness of the solid fluorescent film is controlled through an infrared height measurement module; wherein, a release film is arranged on the glue scraping worktable, and the mixture is poured on the release film and is not adhered with the release film;
step S23, after the solid fluorescent film is formed, carrying out primary baking operation through a heating device arranged at the bottom of the glue scraping worktable to carry out mould turnover operation, and simultaneously cleaning a scraper through a scraper cleaning device;
and step S24, conveying the fixed fluorescent film piece to the position below the cutting device through the conveying device of the film, cutting through the cutting device, and then baking for the second time to form the C-stage PIS solid fluorescent film.
Further, the rollover operation specifically comprises: and C-stage PIS solid fluorescent glue on the release film is attached to the UV film or the high-temperature foaming film, then the release film is taken down, and the C-stage PIS solid fluorescent glue is only left on the UV film or the high-temperature foaming film.
Further, the thickness of the solid fluorescent film layer is 40um-1 mm.
Furthermore, the C-stage PIS solid fluorescent film is suitable for a light-emitting diode, if the light-emitting chip is a flip chip, no bonding wire is needed, and if the light-emitting chip is a forward chip, the light-emitting chip is connected with the substrate through the bonding wire.
The invention has the beneficial effects that: the invention has the following effects: 1. the C-stage PIS solid fluorescent glue is used for a light-emitting diode emitting light from the front side, and the light-emitting diode emitting light from the side needs to be surrounded by white dam glue on a chip to gather the light from the side in the middle; under the condition that the whole light-emitting angle is not changed, the whole light-emitting rate and the light speed of the light-emitting diode can be improved. 2. The C-stagePIS solid fluorescent glue uses common silica gel in the market, and has low price and high utilization rate; 3. in the traditional LED packaging, dispensing or B-stage fluorescent film process, the LED is covered or manufactured with a concave cup for dispensing, and the short plate can be avoided by C-stage solid fluorescent glue; 4. the C-stage PIS solid fluorescent glue is thin in overall thickness and fast in heat dissipation, and solves the problem that the finished product of the light-emitting diode is packaged and dissipated heat, so that the original power which can only be 1W can be increased to 3W-5W, the unit price of the product is reduced, and the power is increased.
Drawings
FIG. 1 is a schematic process flow diagram of the present invention.
FIG. 2 is a schematic diagram of the preparation process of the present invention.
Fig. 3 is a schematic structural view of the frictioning device of the present invention.
Fig. 4 is a schematic structural diagram of the light emitting diode of the present invention after being manufactured.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 1 and 2, the present invention provides a process for preparing a light emitting diode with a C-stage PIS solid fluorescent film, wherein the process comprises the following steps:
step S1, performing solid welding operation on the light-emitting chip and the bracket silver adhesive;
step S2, mixing and vacuum-stirring epoxy resin A or B glue, diluent and glass powder, and then carrying out film scraping, primary baking, mold overturning, cutting, cleaning and secondary baking by using a film scraping device to form a C-stage PIS solid fluorescent film;
step S3, point-bonding silica gel above the light-emitting chip, and then fixedly attaching the C-stagePIS solid fluorescent film on the silica gel above the bonded silica gel through a die bonder;
step S4, setting the baking temperature range at 60-170 ℃/1min-240min, baking the fixed C-stage PIS solid fluorescent film, and finally finishing the attachment of the C-stage PIS solid fluorescent film;
and step S5, dispensing dam adhesive, then carrying out a packaging lens operation, and baking to finally form the light-emitting diode with the C-stage PIS solid fluorescent film.
Referring to fig. 3, in the present invention, the glue scraping apparatus includes a working machine 1, and a film conveying device 2, a scraper device 3, a scraper cleaning device 4, and a cutting device 5 are disposed in the working machine 1; scraper device 3 department is provided with injecting glue device 6, be provided with position detection module 7 and infrared height measurement device 8 on the scraper device 3, step S2 further specifically is:
step S21, mixing and vacuum-stirring the epoxy resin A or B glue, the diluent and the glass powder, and then transmitting the mixture to a glue injection device, wherein the glue injection device controls the glue injection amount by using air pressure and quantitatively outputs the glue amount;
s22, after the glue injection device places the mixture on a glue scraping worktable of a scraper device, the mixture is operated through a scraper of the scraper device, the scraper can move left and right and up and down, the position of a scraping film is selected through a position detection module when the film scraping sheet is operated, and the thickness of the solid fluorescent film is controlled through an infrared height measurement module; wherein, a release film is arranged on the glue scraping worktable, and the mixture is poured on the release film and is not adhered with the release film;
step S23, after the solid fluorescent film is formed, carrying out primary baking operation through a heating device arranged at the bottom of the glue scraping worktable to carry out mould turnover operation, and simultaneously cleaning a scraper through a scraper cleaning device;
and step S24, conveying the fixed fluorescent film piece to the position below the cutting device through the conveying device of the film, cutting through the cutting device, and then baking for the second time to form the C-stage PIS solid fluorescent film.
An LED lighting system 9 is additionally arranged above the inside of the machine table, so that the maintenance of the machine table, the replacement of glue and the lighting of the interior of the machine table are facilitated; an air exhaust system 10 is added above the inside of the machine table, so that the machine table can exhaust air conveniently; a vacuum adsorption device (vacuum adsorption holes designed according to 0.1mm-10 m) is added on a machine frictioning workbench, a heating device (the temperature of the heating device is 1-300 ℃) is added at the bottom, and the influence of the environmental temperature and concentration on the consistency or the capability of frictioning when frictioning glue or other resin solvents is avoided. In addition, the prepared C-stage PIS solid fluorescent film is normally conveyed to the placing table 11.
The mould overturning operation specifically comprises the following steps: and C-stage PIS solid fluorescent glue on the release film is attached to the UV film or the high-temperature foaming film, then the release film is taken down, and the C-stage PIS solid fluorescent glue is only left on the UV film or the high-temperature foaming film. In the invention, the thickness of the solid fluorescent film layer is 40um-1 mm.
The C-stage PIS solid fluorescent film is suitable for a light-emitting diode, if the light-emitting chip is a flip chip, no bonding wire is needed, and if the light-emitting chip is a normally-installed chip, the light-emitting chip is connected with the substrate through the bonding wire.
The invention is further illustrated below with reference to a specific embodiment:
1. a: the proportion requirement of the B glue is as follows: under the condition that A + B is equal to 1, the following material proportion is established, the weight is increased, and the weight is increased according to the proportion;
2. the diluent (proportion: 0.1% -20%), the function: removing the silica gel shrinkage, the lifting, the folding and the adhesion release film;
3. glass powder (ratio: 0.1-20%), function: the integral hardness of the silica gel is increased, the brightness is improved, and the temperature resistance is increased; the proportion of the fluorescent powder is as follows: 10-200% (mixing ratio of single or multiple fluorescent powder);
4. the vacuum stirring/defoaming machine is used for uniformly mixing the silica gel and other substances without bubbles; the model of the machine is TMV-310TT, and the parameters are as follows: the number of segments, the rotating speed and the vacuum can be set according to the silica gel and the fluorescent powder particles;
5. film scraping: release film (PET film material + release agent), effect: the mixed C-stage solid fluorescent glue is poured on the release film and is not adhered to the release film, the precision of a film scraping blade is required to be +/-1 um, the C-stage solid fluorescent glue is smooth, and the speed of the film scraping can be adjusted according to silica gel and fluorescent powder particles;
6. baking: the range is 50-150 ℃/1-120 min;
7. and (3) turning over a mold: attaching the C-stage PIS solid fluorescent glue on the release film to the UV film or the high-temperature foaming film, and then taking down the release film, wherein the C-stage PIS solid fluorescent glue is only left on the UV film or the high-temperature foaming film;
8. cutting: using a water type cutting machine, setting cutting sizes according to the sizes of the LED chips: the size of the cutting machine can be 5mil by 5mil to 100mm by 100mm, and the rotating speed of the cutting machine can be set according to the hardness of the silica gel and the fluorescent powder particles, and the cutting speed (the range is 5000 plus 30000 rotation, and the cutting speed is 1mm to 100 mm/S);
9. cleaning: get rid of debris, water, foreign matter etc. after the cutting, the cleaning machine model: DCS1460, cleaning time/speed: can be adjusted according to the cleaning condition, including rotating speed, positive and negative rotation, etc.;
10. and (3) turning over a mold: cleaning the C-stage PIS solid fluorescent glue material on the UV film, and then turning over the die to a high-temperature foaming film (directly cutting by the foaming film, the process of turning over the die can be cancelled, cutting by the UV film needs to be added with the process of turning over the die);
11. baking: removing residual DI water after cleaning, and baking time: 50-149 deg.C/10-120 min;
12. and (3) crystal solidification: baking the C-stage PIS solid fluorescent glue at the temperature of 100-150 ℃ for dispergation, putting the C-stage PIS solid fluorescent glue on a blue film (in a die bonder) after dispergation is finished, putting a fixed light-emitting diode chip on a machine table, bonding silica gel (the thickness of the bonding glue needs to be controlled to be 1-20 mu m) on the chip, and then fixedly attaching the C-stage PIS solid fluorescent glue on the bonding glue;
13. baking: the baking temperature range is 60-170 ℃/1min-240min, and the cured C-stage PIS solid fluorescent glue can be baked;
14. finally, the LED is attached to the C-stage PIS solid fluorescent glue, and other processes of the LED are continuously completed.
15. The C-stage PIS solid fluorescent glue is suitable for the light-emitting diode, if the flip chip can not need a bonding wire, the normally-mounted chip needs the bonding wire to connect the substrate and the chip;
in the invention, in the preparation of the C-stage PIS solid fluorescent glue, if the hardness of the silica gel is more than the hardness Shore A30, the glass glue can be omitted, and the method is included according to the use of the product; the manufacturing thickness of the C-stage PIS solid fluorescent glue can be controlled within 40um-1mm, and the thickness can be adjusted according to requirements of color temperature/display finger and the like (containing single silica gel); in the manufacturing of the C-stage PIS solid fluorescent glue, the reduction and increase of the process are consistent with the process or the flow and the product structure and are all in the range; the C-stage PIS solid fluorescent glue needs to meet the requirements, and any color temperature is made, such as: 1000K-100000K, the indication and the thickness can be adjusted at will; the C-stage PIS solid fluorescent glue needs to meet the requirement that single color is matched with a blue light emitting diode chip to produce monochromatic light (for example, green powder is used to produce green C-stage PIS solid fluorescent glue and a blue light emitting diode, and green light is produced after the green light emitting diode is lightened) or multiple kinds of fluorescent powder are mixed to produce white light or other colors.
The C-stage PIS solid fluorescent glue needs to meet the requirement that the brightness of a flip chip or a front chip is required to reach or exceed that of a B-stage fluorescent film product;
c-stage PIS solid fluorescent glue preparation flow and use flow are as follows: mixing A/B silica gel, diluent and glass powder → vacuum stirring/defoaming → film scraping → baking → mold turning → cutting → cleaning → mold turning → baking, and finishing the manufacture of the C-stage PIS solid fluorescent glue after baking; and then, fixing the C-stage PIS solid fluorescent glue → baking → other steps of normally manufacturing the LED (removing the glue dispensing step, and replacing the traditional glue dispensing and fluorescent film pasting step by the C-stage PIS solid fluorescent glue).
Referring to fig. 2, the flow chart refers to the moving Lens, which may or may not refer to a plane, a convex surface, a concave surface, and this may be designed according to the product requirements.
Referring to fig. 4, in addition, the prepared led with C-stage PIS solid fluorescent film includes a substrate 12, a chip holder (not shown) is disposed on the substrate 12, a holder eutectic glue or a holder silver glue 13 is disposed on the chip holder, a led chip 14 is disposed on the holder eutectic glue or the holder silver glue 13, a bonding layer 15 is disposed on the led chip 14, a ring of dam glue 16 is disposed on the substrate 12, the dam glue 16 surrounds the chip holder, the holder eutectic glue or the holder silver glue 13, the led chip 14, and the bonding layer 15, a C-stage PIS solid fluorescent film 17 is disposed on the bonding layer 15, and the C-stage PIS solid fluorescent film 17 is located above the dam glue 16, that is, the C-stage PIS solid fluorescent film is disposed on the led chip 14 through the bonding layer, a Lens layer 18 (i.e., Lens layer) is encapsulated on the substrate 1. Thus, the C-stage PIS solid fluorescent film is used for the light-emitting diode emitting light from the front side, and the light-emitting diode emitting light from the side surface gathers the light from the side surface in the middle through the dam adhesive of the light-emitting diode chip; under the condition that the whole light-emitting angle is not changed, the whole light-emitting rate and the light speed of the light-emitting diode can be improved.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the claims of the present invention should be covered by the present invention.
Claims (5)
1. A preparation process of a light-emitting diode with a C-stage PIS solid fluorescent film is characterized in that: the preparation process comprises the following steps:
step S1, performing solid welding operation on the light-emitting chip and the bracket silver adhesive;
step S2, mixing and vacuum-stirring epoxy resin A or B glue, diluent and glass powder, and then carrying out film scraping, primary baking, mold overturning, cutting, cleaning and secondary baking by using a film scraping device to form a C-stage PIS solid fluorescent film;
step S3, point-bonding silica gel above the light-emitting chip, and then fixedly attaching the C-stagePIS solid fluorescent film on the silica gel above the bonded silica gel through a die bonder;
step S4, setting the baking temperature range at 60-170 ℃/1min-240min, baking the fixed C-stage PIS solid fluorescent film, and finally finishing the attachment of the C-stage PIS solid fluorescent film;
and step S5, dispensing dam adhesive, then carrying out a packaging lens operation, and baking to finally form the light-emitting diode with the C-stage PIS solid fluorescent film.
2. The process of claim 1, wherein the solid fluorescent film of C-stage PIS comprises the following steps: the glue scraping equipment comprises a working machine table, and a film conveying device, a scraper cleaning device and a cutting device are arranged in the working machine table; scraper device department is provided with the injecting glue device, be provided with position detection module and infrared height measurement device on the scraper device, step S2 further specifically is:
step S21, mixing and vacuum-stirring the epoxy resin A or B glue, the diluent and the glass powder, and then transmitting the mixture to a glue injection device, wherein the glue injection device controls the glue injection amount by using air pressure and quantitatively outputs the glue amount;
s22, after the glue injection device places the mixture on a glue scraping worktable of a scraper device, the mixture is operated through a scraper of the scraper device, the scraper can move left and right and up and down, the position of a scraping film is selected through a position detection module when the film scraping sheet is operated, and the thickness of the solid fluorescent film is controlled through an infrared height measurement module; wherein, a release film is arranged on the glue scraping worktable, and the mixture is poured on the release film and is not adhered with the release film;
step S23, after the solid fluorescent film is formed, carrying out primary baking operation through a heating device arranged at the bottom of the glue scraping worktable to carry out mould turnover operation, and simultaneously cleaning a scraper through a scraper cleaning device;
and step S24, conveying the fixed fluorescent film piece to the position below the cutting device through the conveying device of the film, cutting through the cutting device, and then baking for the second time to form the C-stage PIS solid fluorescent film.
3. The process of claim 2, wherein the solid fluorescent film of C-stage PIS is prepared by the following steps: the mould overturning operation specifically comprises the following steps: and C-stage PIS solid fluorescent glue on the release film is attached to the UV film or the high-temperature foaming film, then the release film is taken down, and the C-stage PIS solid fluorescent glue is only left on the UV film or the high-temperature foaming film.
4. The process of claim 1, wherein the solid fluorescent film of C-stage PIS comprises the following steps: the thickness of the solid fluorescent film layer is 40um-1 mm.
5. The process of claim 1, wherein the solid fluorescent film of C-stage PIS comprises the following steps: the C-stage PIS solid fluorescent film is suitable for a light-emitting diode, if the light-emitting chip is a flip chip, no bonding wire is needed, and if the light-emitting chip is a normally-installed chip, the light-emitting chip is connected with the substrate through the bonding wire.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112510137A (en) * | 2020-12-10 | 2021-03-16 | 广东聚科照明股份有限公司 | Production method of integrated lamp bead |
| CN113594333A (en) * | 2021-07-12 | 2021-11-02 | 福建天电光电有限公司 | LED packaging structure and preparation method thereof |
| CN113809216A (en) * | 2021-09-17 | 2021-12-17 | 福建天电光电有限公司 | Preparation method of solid fluorescent glue and solid fluorescent glue sheet |
| CN113809217A (en) * | 2021-09-17 | 2021-12-17 | 福建天电光电有限公司 | LED packaging method |
| CN113823728A (en) * | 2021-09-18 | 2021-12-21 | 深圳市合丰光电有限公司 | Method for forming fluorescent powder layer on surface of LED chip and LED chip structure |
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Application publication date: 20200911 |