CN113809217A - LED packaging method - Google Patents
LED packaging method Download PDFInfo
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- CN113809217A CN113809217A CN202111091776.5A CN202111091776A CN113809217A CN 113809217 A CN113809217 A CN 113809217A CN 202111091776 A CN202111091776 A CN 202111091776A CN 113809217 A CN113809217 A CN 113809217A
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- packaging method
- led packaging
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000007787 solid Substances 0.000 claims abstract description 79
- 239000003292 glue Substances 0.000 claims abstract description 70
- 239000000853 adhesive Substances 0.000 claims abstract description 22
- 230000001070 adhesive effect Effects 0.000 claims abstract description 22
- 230000004907 flux Effects 0.000 claims abstract description 18
- 238000005476 soldering Methods 0.000 claims abstract description 16
- 239000000565 sealant Substances 0.000 claims abstract description 15
- 230000005496 eutectics Effects 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000000741 silica gel Substances 0.000 claims description 24
- 229910002027 silica gel Inorganic materials 0.000 claims description 24
- 239000003085 diluting agent Substances 0.000 claims description 19
- 239000000843 powder Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 9
- 229920001971 elastomer Polymers 0.000 claims description 9
- 238000007790 scraping Methods 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 6
- UHOPWFKONJYLCF-UHFFFAOYSA-N 2-(2-sulfanylethyl)isoindole-1,3-dione Chemical group C1=CC=C2C(=O)N(CCS)C(=O)C2=C1 UHOPWFKONJYLCF-UHFFFAOYSA-N 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims 3
- 230000017525 heat dissipation Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 235000014820 Galium aparine Nutrition 0.000 description 2
- 240000005702 Galium aparine Species 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229920001342 Bakelite® Polymers 0.000 description 1
- 229910020440 K2SiF6 Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229940110728 nitrogen / oxygen Drugs 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to the technical field of LED packaging, in particular to an LED packaging method, which comprises the following steps of cleaning a carrier support, arranging soldering flux on the carrier support, fixing a chip on the soldering flux for eutectic bonding so as to volatilize the soldering flux, and bonding the chip with the carrier support; cleaning the eutectic-bonded material, sequentially adding an adhesive and a solid fluorescent film above the chip, and baking to completely cure the chip and the solid fluorescent film; arranging reflective glue on the periphery of the chip and curing the reflective glue to cover blue light on the periphery of the chip; packaging with sealant; the solid fluorescent film is adopted for packaging, so that the lighting effect of the light-emitting diode is improved, the whole thickness of the solid fluorescent film is thinner, the heat dissipation efficiency is high, the problem of packaging and heat dissipation of a finished product of the light-emitting diode is solved, and the brightness of the light-emitting diode and the reliability of the light-emitting diode are further improved.
Description
Technical Field
The invention relates to the technical field of LED packaging, in particular to an LED packaging method.
Background
Compared with the prior generation of lighting products, the LED light source has the remarkable advantages of high luminous efficiency, high response speed, long service life, no toxic gas, no radiation, impact resistance, easy control and the like, and the application range and the market share of the LED light source are increasingly improved.
However, the conventional light emitting diode package generally packages a layer of fluorescent glue or silica gel with fluorescent powder on an LED chip; the resin and the curing agent react, and the fluorescent glue formed by heating or the silica gel with the fluorescent powder is expensive and has low cutting and utilization rate in size and operability; and the thickness of the existing fluorescent glue or silica gel with fluorescent powder is thicker, and the heat dissipation is slow.
Disclosure of Invention
In order to solve the defects of high LED packaging cost and slow heat dissipation of the existing packaging adopting silica gel in the prior art, the invention provides an LED packaging method, which comprises the following steps,
cleaning a carrier support, arranging soldering flux on the carrier support, fixing a chip on the soldering flux for eutectic bonding so as to volatilize the soldering flux, and bonding the chip and the carrier support;
cleaning the eutectic-bonded material, sequentially adding an adhesive and a solid fluorescent film above the chip, and baking to completely cure the chip and the solid fluorescent film;
arranging reflective glue on the periphery of the chip and curing the reflective glue to cover blue light on the periphery of the chip;
and (5) performing encapsulation treatment by using a sealant.
In one embodiment, the flux has a thickness of 1-20 microns.
In one embodiment, eutectic bonding is performed by using a eutectic machine, and the thickness of the chip and the carrier support after eutectic bonding is 1-3 microns.
In one embodiment, the size of the adhesive is 20% -50% smaller than that of the chip, and the adhesive is silica gel.
In one embodiment, the solid fluorescent film is placed on the adhesive using a multi-well nozzle, and the solid fluorescent film is prepared by the following steps,
mixing and stirring fluorescent powder, silica gel and a diluent, and removing bubbles in vacuum, wherein the fluorescent powder, the silica gel and the diluent are in a ratio of (1-3): 1: (0.01 to 0.2);
extruding the mixed glue solution with bubbles removed onto a release film and horizontally pushing and scraping the mixed glue solution to form a mixed glue film; heating the mixed rubber sheet to volatilize the diluent and solidify the silica gel to generate a solid fluorescent rubber;
and cutting the solid fluorescent glue to obtain the solid fluorescent glue with a preset size, wherein the size of the solid fluorescent glue is matched with that of the chip.
In one embodiment, the diluent is propyl propionate.
In one embodiment, the mixed film is heated at 50-150 ℃ for 10-60 min.
In one embodiment, the baking temperature is 150-.
In one embodiment, the height of the reflective adhesive is lower than that of the solid fluorescent film, the curing temperature is 120 ℃ to 160 ℃, and the curing time is 60-80 min.
In an embodiment, the sealant covers the chip and the upper surface of the carrier support, and the sealant is a planar sealant or a concave-convex surface sealant.
Based on the above, compared with the prior art, the LED packaging method provided by the invention improves the light efficiency of the light emitting diode by packaging the solid fluorescent film, can effectively save cost compared with the traditional glue dispensing, glue spraying or fluorescent film dispensing and other modes, solves the problem of packaging and heat dissipation of the finished product of the light emitting diode, and further improves the light emitting brightness of the light emitting diode and the reliability of the light emitting diode.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts; in the following description, the drawings are illustrated in a schematic view, and the drawings are not intended to limit the present invention.
FIG. 1 is a schematic flow chart of a method for packaging an LED according to the present invention;
FIG. 2 is a schematic diagram of an LED packaged by the LED packaging method according to the present invention;
FIG. 3 is a schematic diagram comparing color temperature curves of products packaged by solid fluorescent films according to the present invention;
FIG. 4 is a schematic flow chart of the solid fluorescent film preparation provided by the present invention;
FIG. 5 is a schematic structural diagram of a solid fluorescent glue before cutting according to the present invention;
FIG. 6 is a schematic view of a cut solid fluorescent film provided by the present invention.
Reference numerals:
10 carrier 20 chip 30 adhesive
40 solid fluorescent film 41 and 50 reflective adhesive of release film
51-limiting round frame 60 sealant
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; the technical features designed in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be noted that all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs, and are not to be construed as limiting the present invention; it will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The white light product of the ceramic light-emitting diode has the use power of more than 5W, and the traditional glue dispensing, glue spraying and fluorescent film processes are limited by glue and processes and cannot be used; the fluorescent diaphragm and the ceramic fluorescent sheet are required to be used for operation, and the packaging cost of the fluorescent diaphragm or the ceramic fluorescent sheet is high, so that as shown in figure 1, the LED packaging method provided by the invention comprises the steps of cleaning a carrier support, arranging soldering flux on the carrier support, fixing a chip on the soldering flux for eutectic bonding so as to volatilize the soldering flux, and bonding the chip with the carrier support;
cleaning the eutectic-bonded material, sequentially adding an adhesive and a solid fluorescent film above the chip, and baking to completely cure the chip and the solid fluorescent film;
arranging reflective glue on the periphery of the chip and curing the reflective glue to cover blue light on the periphery of the chip;
and (5) performing encapsulation treatment by using a sealant.
In specific implementation, as shown in fig. 1 and fig. 2, firstly, the carrier frame 10 is cleaned to remove the surface stains on the carrier frame 10, the bonding stability between the carrier frame 10 and the chip 20 is improved, the soldering flux is dotted on the cleaned carrier frame 20, and the chip 20 is fixed above the soldering flux, the fixed chip 20 can be shifted by ± 3 °, and the thickness of the soldering flux can be 1-20 μm, for example, 1 μm, 2 μm … 18 μm, 19 μm, and 20 μm.
The fixed chip 20 is then placed in a eutectic machine to volatilize the flux, which then effectively bonds the chip 20 to the carrier support 10, and the thickness of the bonded chip 20 and carrier support 10 may be 1-3 μm, for example, 1 μm, 1.1 μm … 2.8.8 μm, 2.9 μm, 3 μm.
After die bonding, the chip 20 and the carrier frame 10 are cleaned again to remove stains after eutectic bonding, so that the solid fluorescent film 40 and the chip 20 can be bonded stably.
After cleaning again, a layer of adhesive 30 is firstly dispensed on the chip 20 by adopting a die bonder, the dispensing glue needle can be made of bakelite, the adhesive 30 can play a role in bonding the chip 20 and the solid fluorescent film 40, the adhesive 30 can be silica gel, the thickness of the adhesive can be 1-10 μm, and the size of the adhesive 30 can be 20-50% smaller than that of the chip 20; and then, the solid fluorescent film 40 is sucked by the multi-hole suction nozzle and the solid fluorescent film 40 is placed on the adhesive 30, the multi-hole suction nozzle can be a suction nozzle with more than 2 holes, the air pressure of a single hole can be reduced by adopting the multi-hole suction nozzle, and the solid fluorescent film 40 is prevented from being marked or not normally placed above the chip 20 when being attached.
The size of the solid fluorescent film 40 is matched with the size of the chip 20, in this embodiment, the matching means that the length and the width of the solid fluorescent film 40 are the same as those of the chip 20, or the length and the width of the solid fluorescent film 40 are compared with those of the chip 20, the length and the width of the solid fluorescent film 40 are ± 20% of those of the chip 20, or the length and the width of the solid fluorescent film 40 are 10% -50% larger than those of the chip 20, so that the light effect conversion can be performed, and light leakage during light emitting of the chip can be avoided.
Baking the solid fluorescent film 40 after the attachment is finished, wherein the baking temperature can be 150-200 ℃, and the baking time is 60-80min, so that the chip 20 and the solid fluorescent film 40 are completely cured; the chip 20 and the solid fluorescent film 40 are solidified, and the test thrust can reach more than 1Kg through a push-pull dynamometer.
Then, the reflective glue 50 is disposed around the periphery of the chip 20, the height of the reflective glue 50 is lower than that of the solid fluorescent film 40, and the reflective glue 50 covers the bottom and the periphery of the chip 20 to cover the blue light around the chip 20, so that the blue light can only be refracted to the front of the chip 20 through the reflective glue 50 to emit light, that is, to the front light emitting surface above the chip 20 to emit light, thereby improving the light emitting efficiency and the light emitting brightness of the light emitting region of the light emitting diode. Preferably, in order to prevent the reflective glue 50 from overflowing the periphery of the led, the reflective glue 50 is disposed between the limiting circular frame 51 and the chip 20, the height of the limiting circular frame 51 may be 50-200 μm, and the width of the limiting circular frame 51 may be 20-200 μm.
And curing the reflective adhesive 50 in an oven after the setting is finished, wherein the curing temperature can be 120-160 ℃, and the curing time can be 60-80 min. The light reflecting glue 50 can collect the light from the side surface on the front surface of the chip 20, and the light emitting rate and the light speed of the whole light emitting diode can be improved under the condition that the whole light emitting angle is not changed.
Finally, the chip 20 and the carrier support 10 are placed in a mold, the sealant 60 is filled above the chip 20, and the sealant 60 covers the chip 20 and the upper surface of the carrier support 10, preferably, the sealant 60 can be a plane sealant or a concave-convex sealant, so that the attachment of the solid fluorescent film 40 can be protected, and the luminous efficiency of the chip can be improved; after the sealant 60 is filled, subsequent processes such as a cutting test can be performed.
As shown in fig. 3, as can be seen from the comparison of the color temperature curves of the light emitting diodes using the solid fluorescent film 40 and the light emitting diodes using the fluorescent film, the light efficiency of the light emitting diodes using the solid fluorescent film 40 is improved by 5% to 7%; the solid fluorescent film 40 is attached to the front surface above the chip, so that compared with the traditional glue dispensing, glue spraying or fluorescent film mode, a large amount of glue and powder can be saved, 80% of cost can be saved in the primary die bonding process, and the use of nitrogen/oxide fluorescent powder which is a non-renewable resource is effectively saved.
And the solid fluorescent film 40 has a small thickness and high heat dissipation efficiency, solves the problem of packaging and heat dissipation of the finished product of the light-emitting diode, and improves the power of the original light-emitting diode from 1W to 3W to 5W to 7W, thereby further improving the brightness and the reliability of the light-emitting diode.
Wherein, as shown in fig. 4, the solid fluorescent film 40 is prepared by the following steps;
mixing and stirring fluorescent powder, silica gel and a diluent, and removing bubbles in vacuum, wherein the ratio of the fluorescent powder to the silica gel to the diluent is (1-3): 1: (0.01 to 0.2);
extruding the mixed glue solution with bubbles removed onto a release film 41 and horizontally pushing and scraping the mixed glue solution to form a mixed glue film; heating the mixed film to solidify the silica gel and volatilize the diluent to generate solid fluorescent glue; and cutting the solid fluorescent glue to obtain a solid fluorescent film 40 with a preset size, wherein the size of the solid fluorescent film 40 is matched with that of the chip 20.
Specifically, fluorescent powder, silica gel and a diluent are put into a rubber cup, and the ratio of the fluorescent powder to the silica gel to the diluent is (1-3): 1: (0.01-0.2), preferably, in one embodiment, the ratio of the phosphor, the silica gel and the diluent is 1.5: 1: 0.01; as the color temperature decreases and the color rendering index increases, the proportion of the phosphor also increases.
The phosphor can be a nitrogen/oxygen phosphor, e.g., CaAlSi (ON)3Eu or SiAlON: eu or (Sr, Eu, Yb, Ba)3SiO5Or K2SiF6Mn or (Sr, Ba, Ca)2SiO4Or Silicone, etc.; the diluent may be propyl propionate.
Then, putting the rubber cup into a vacuum defoaming machine for mixing and stirring, removing glue bubbles in the stirring in vacuum, introducing the mixed glue solution in the rubber cup into a needle tube of an automatic film scraping machine after defoaming is finished, arranging a release film 41 on a platform of the automatic film scraping machine, wherein the total thickness of the release film 41 can be 1-50 μm.
In one embodiment, the release film 41 includes, from top to bottom, a first release film release agent layer, a second release film protection film and a third release film substrate, wherein the first release film release agent layer may have a thickness of 1-10 μm, the second release film protection film layer may have a thickness of 1-25 μm, the third release film substrate layer may have a thickness of 1-25 μm, and the third release film substrate layer may be made of PET.
The automatic film scraping machine comprises a scraper device, a glue injection mechanism is arranged at the scraper device, the glue injection mechanism controls glue discharging amount by using air pressure and outputs glue amount to the release film 41 quantitatively, the precision of the scraper device is set to be +/-1-2.5 micrometers, as shown in figure 5, the mixed glue solution on the release film is flatly pushed and scraped by moving the scraper device up and down and left and right so as to facilitate complete solidification of the silica gel and complete volatilization of the diluent when the mixed glue film is heated, and preferably, the thickness of the flatly pushed mixed glue film is 10-300 micrometers, such as 10 micrometers, 11 micrometers, 12 micrometers … 298 micrometers, 299 micrometers and 300 micrometers.
And after the mixed rubber sheet is formed, putting the mixed rubber sheet into an oven to be heated, so that the silica gel is solidified, the diluent is volatilized, the silica gel and the fluorescent powder can be well fused after the diluent is volatilized, the thickness of the heated solid fluorescent glue is 25-400 mu m, the heating temperature is 50-150 ℃, and the heating time is 10-60 min.
TABLE 1
TABLE 2
As shown in table 1, examples 1 to 3 are solid fluorescent films prepared by using the LED packaging method provided by the present invention, comparative examples 1 to 3 are solid fluorescent films prepared by adding nano glass to fluorescent powder, the heating temperature is 100 ℃, and the heating time is 60 min; it is understood that the hardness shore D70 and the elongation of the solid fluorescent films 40 of comparative examples 1 to 3 were 0, and the material hardness determined the contact with the chip surface, and the contact between the solid fluorescent films 40 and the chip 20 surface resulted in the damage of the chip electrodes and the metal leads, and the occurrence of abnormalities such as electrical leakage.
The viscosity, hardness, light transmittance and tensile strength of the solid fluorescent films 40 of the examples 1 to 3 are superior to those of the solid fluorescent films 40 of the comparative examples 1 to 3; the solid fluorescent film 40 prepared by the invention avoids the over-high hardness and the over-low tensile force of the solid fluorescent film 40 during packaging, and the stress and the tensile force of the silica gel are completely released after stirring, film scraping, baking, semi-curing and cutting by using a diluent, so that the tensile strength of the silica gel is maintained, a certain flexibility is realized during packaging, and when the solid fluorescent film 40 is attached to the chip 20, the chip electrode and the metal circuit are not damaged.
As shown in fig. 5 and 6, after the solid fluorescent glue is obtained by heating, the solid fluorescent glue is cut, specifically, the solid fluorescent glue is split into a plurality of solid fluorescent glue sheets by a splitter, preferably, the thickness of a cleaver of the splitter may be 1 to 10 μm, so as to avoid the existence of residual glue when the cleaver is too thick; or cutting the solid fluorescent glue by using a glue cutting machine to obtain the solid fluorescent glue sheet 40 with a preset size. However, the present invention is not limited thereto.
As shown in fig. 5 and 6, the size of each cut single solid fluorescent film 40 is matched with the size of the chip 20, in this embodiment, the matching means that the length and width of the solid fluorescent film 40 are the same as those of the chip 20, or the length and width of the solid fluorescent film 40 are compared with those of the chip 20, and the length and width of the solid fluorescent film are ± 20% of those of the chip; the cut solid fluorescent film 40 can be turned over to a UV film or a high-temperature film to be dispergated by a UV dispergator, so that the solid fluorescent film is convenient to absorb and use.
In summary, compared with the prior art, the LED packaging method provided by the invention improves the light efficiency of the light emitting diode by packaging the solid fluorescent film, can effectively save cost compared with the traditional glue dispensing, glue spraying or fluorescent film dispensing methods, and the like, and solves the problem of heat dissipation of the finished product of the light emitting diode due to the thin thickness of the solid fluorescent film, thereby further improving the light emitting brightness of the light emitting diode and the reliability of the light emitting diode.
In addition, it will be appreciated by those skilled in the art that, although there may be many problems with the prior art, each embodiment or aspect of the present invention may be improved only in one or several respects, without necessarily simultaneously solving all the technical problems listed in the prior art or in the background. It will be understood by those skilled in the art that nothing in a claim should be taken as a limitation on that claim.
Although terms such as carrier support, chip, adhesive glue, solid fluorescent film, and reflective glue are used more often herein, the possibility of using other terms is not excluded. These terms are used merely to more conveniently describe and explain the nature of the present invention; they are to be construed as being without limitation to any additional limitations that may be imposed by the spirit of the present invention; the terms "first," "second," and the like in the description and in the claims, and in the drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. An LED packaging method, characterized in that: comprises the following steps of (a) carrying out,
cleaning a carrier support, arranging soldering flux on the carrier support, fixing a chip on the soldering flux for eutectic bonding so as to volatilize the soldering flux, and bonding the chip and the carrier support;
cleaning the eutectic-bonded material, sequentially adding an adhesive and a solid fluorescent film above the chip, and baking to completely cure the chip and the solid fluorescent film;
arranging reflective glue on the periphery of the chip and curing the reflective glue to cover blue light on the periphery of the chip;
and (5) performing encapsulation treatment by using a sealant.
2. The LED packaging method of claim 1, wherein: the thickness of the soldering flux is 1-20 microns.
3. The LED packaging method of claim 1, wherein: and carrying out eutectic bonding by using an eutectic machine, wherein the thickness of the chip and the carrier support after the eutectic bonding is 1-3 microns.
4. The LED packaging method of claim 1, wherein: the size of the adhesive is 20% -50% smaller than that of the chip, and the adhesive is silica gel.
5. The LED packaging method of claim 1, wherein: placing the solid fluorescent film on the adhesive by adopting a multi-hole suction nozzle, wherein the solid fluorescent film is prepared by adopting the following steps,
mixing and stirring fluorescent powder, silica gel and a diluent, and removing bubbles in vacuum, wherein the fluorescent powder, the silica gel and the diluent are in a ratio of (1-3): 1: (0.01 to 0.2);
extruding the mixed glue solution with bubbles removed onto a release film and horizontally pushing and scraping the mixed glue solution to form a mixed glue film; heating the mixed rubber sheet to volatilize the diluent and solidify the silica gel to generate a solid fluorescent rubber;
and cutting the solid fluorescent glue to obtain the solid fluorescent glue with a preset size, wherein the size of the solid fluorescent glue is matched with that of the chip.
6. The LED packaging method according to claim 5, wherein: the diluent is propyl propionate.
7. The LED packaging method according to claim 5, wherein: the heating temperature of the mixed film is 50-150 ℃, and the heating time is 10-60 min.
8. The LED packaging method of claim 1, wherein: the baking temperature is 150-200 ℃, and the baking time is 60-80 min.
9. The LED packaging method of claim 1, wherein: the height of the reflective adhesive is lower than that of the solid fluorescent film, the curing temperature is 120-160 ℃, and the curing time is 60-80 min.
10. The LED packaging method of claim 1, wherein: the sealing glue coats the upper surfaces of the chip and the carrier support, and is a plane sealing glue or a concave-convex surface sealing glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111091776.5A CN113809217A (en) | 2021-09-17 | 2021-09-17 | LED packaging method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116673645A (en) * | 2023-06-12 | 2023-09-01 | 无锡市斯威克科技有限公司 | Photovoltaic module welding mode |
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