CN101740712A - LED (Liquid Emitting Diode) crystal grain fixing method - Google Patents

LED (Liquid Emitting Diode) crystal grain fixing method Download PDF

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Publication number
CN101740712A
CN101740712A CN200910201265A CN200910201265A CN101740712A CN 101740712 A CN101740712 A CN 101740712A CN 200910201265 A CN200910201265 A CN 200910201265A CN 200910201265 A CN200910201265 A CN 200910201265A CN 101740712 A CN101740712 A CN 101740712A
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CN
China
Prior art keywords
alloy
led
tin
bonding
scaling powder
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Pending
Application number
CN200910201265A
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Chinese (zh)
Inventor
韩凯
沈兰新
刘木清
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SHANGHAI JINGGENG LIGHTING ELECTRIC APPLIANCES CO Ltd
Original Assignee
SHANGHAI JINGGENG LIGHTING ELECTRIC APPLIANCES CO Ltd
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Application filed by SHANGHAI JINGGENG LIGHTING ELECTRIC APPLIANCES CO Ltd filed Critical SHANGHAI JINGGENG LIGHTING ELECTRIC APPLIANCES CO Ltd
Priority to CN200910201265A priority Critical patent/CN101740712A/en
Publication of CN101740712A publication Critical patent/CN101740712A/en
Pending legal-status Critical Current

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Abstract

The invention belongs to the technical field of LED encapsulation, in particular to an LED crystal grain fixing method. The method comprises the steps of: proportionally mixing tin, silver and copper to form an alloy which can be used for directly preparing an alloy thinner layer on an electrode of a PCB (Printed Circuit Board) base board or be proportionally mixed with soldering flux to prepare tin paste, dropping the soldering flux or the tin paste onto the electrode of the PCB base board, arranging the LED chip on the soldering flux or the tin paste, applying pressure force to lead the soldering flux or the tin paste under the LED chip to form a thin layer, adopting heating equipment to heat the mixed layer until the alloy tin paste is melted according to an optimized temperature curve, evaporating the soldering flux and cooling, thereby finishing LED crystal grain fixing; and the proportion of tin to silver to copper is 95.5:3.8:0.7 or 96.5:3:0.5, and the ratio of the alloy to the soldering flux is 84:16 to 90:10. The method adopts the alloy the components of which are tin, silver and copper as a crystal grain fixing material and has higher thermal conductivity in comparison with silver paste and proper crystal grain fixing temperature in comparison with other tin alloys, and the entire heating process of fixing the crystal grains by the alloy needs only several minutes, therefore, the method can lower the thermal resistance of a product, reduce the process cost and increase the production efficiency.

Description

The die-bonding method of a kind of LED
Technical field
The invention belongs to LED encapsulation technology field, be specifically related to the die-bonding method of a kind of LED.
Background technology
For LED encapsulation, especially great power LED, heat dissipation problem is very serious.High working junction temperature will have influence on the light efficiency of entire device, photochromic, life-span, light decay greatly.And present LED encapsulation has almost completely used traditional silver slurry as solid brilliant material, and silver slurry thermal conductivity is low, can't satisfy the heat radiation requirement of great power LED.Must change the material of solid crystalline substance for the problem that solves heat radiation, alloy becomes first-selected material.CREE has at first issued the chip that has the gold-tin alloy layer, can use the method for eutectic solid brilliant, but the eutectic apparatus expensive, and can only use the chip of CREE, and the eutectic temperature height causes chip to damage easily, and technology is immature.The present invention proposes the die-bonding method of a kind of tin cream with the SAC composition as solid brilliant material, Gu brilliant temperature is low, the not leaded environmental protection of material and be applicable to any led chip is that a kind of technology is simple, the method for low cost, low thermal resistance.
Summary of the invention
The objective of the invention is to propose the die-bonding method of a kind of LED, it is based on the die-bonding method of SAC alloy for solid brilliant material, and adopting composition is the solid brilliant material of alloy conduct of SAC, and reflow machine or heating platform are as firing equipment.
The die-bonding method of the LED that the present invention proposes, concrete steps are as follows:
Tin, silver and copper are mixed and made into alloy in proportion, the gained alloy can directly be made into alloy thin layer or be mixed with into tin cream in proportion with scaling powder on the PCB electrode of substrate, scaling powder or tin cream are put on the PCB electrode of substrate, led chip is positioned on scaling powder or the tin cream again, and exert pressure and make under the led chip scaling powder or tin cream form one deck thin layer, adopt firing equipment described mixed layer to be heated to the fusing of alloy tin cream according to the temperature curve of optimizing, the scaling powder volatilization, cool off, promptly finish the solid crystalline substance of LED.
Among the present invention, described alloy can be alloying pellet or alloy thin layer.
Among the present invention, in the described alloy, tin, silver and copper three's ratio is 95.5: 3.8: 0.7 or 96.5: 3: 0.5.
Among the present invention, described alloy thin layer can be grown on the PCB electrode of substrate by the method for PVD (gas phase physical deposition) and be obtained.
Among the present invention, described scaling powder can adopt among the TACFlux026 of Indium company or nf260 etc. any.
Among the present invention, the ratio of alloy and scaling powder is 84: 16 to 90: 10 in the described tin cream.
Among the present invention, described exerting pressure can adopt the solid automatically brilliant machine of use to place chip, provides when suction nozzle presses down.
Among the present invention, described firing equipment is reflow machine or heating platform.
Among the present invention, the temperature curve of described optimization is heated to be example with the backflow solder flux, the adjusting of finger by each warm area of reflow machine and material are spent the time of each warm area, make temperature variation curve actual on the material approaching as far as possible with needed temperature variation curve in the scolder description, thereby obtain not have bubble, the interface of better chip of more firm, thermal characteristics and support.
Among the present invention, for the heating curves of realizing mating with tin cream, thereby obtain best solid crystal boundary face, can select for use to have programing function, the Reflow Soldering machine of energy accurate temperature controlling or heating platform are as firing equipment.Under small-scale production or laboratory condition, not that the very strict heating platform of a controllable temperature that also can simply adopt heats if solid crystal boundary face is required.
The present invention adopts alloy to compare traditional silver slurry as solid brilliant material to have littler thermal resistance; The employing alloy is made tin cream or is used alloy in conjunction with the method for PCB substrate, therefore the chip of using is not required, and uses and various led chips; Adopt its fusing point of SAC alloy to be about 217 ℃, though terne metal height than 183 ℃ of fusing points, the more environmental protection of lead but it does not contain hazardous substance, it is lower to compare the gold-tin alloy cost, Gu brilliant temperature is lower, reduced the family of solid crystalline substance and the injury of chip, thereby reduced requirement technology controlling and process and firing equipment, solve in traditional LED encapsulating structure thermal resistance greatly, eutectic technology entry threshold height, the jejune problem of technical equipment.
Description of drawings
Fig. 1 embodiment 1 solid brilliant schematic flow sheet.Wherein:, (b), (c) be the schematic diagram after heating for placing the schematic diagram behind the chip (a) for put the schematic diagram behind the solder(ing) paste.
Fig. 2 embodiment 2 solid brilliant schematic flow sheets.Wherein: (a) for deposit the schematic diagram of support of alloy, (b) for put the schematic diagram behind the scaling powder, (c), (d) be the schematic diagram after heating for placing the schematic diagram behind the chip.
Number in the figure: 1 is tin cream, and 2 is the PCB substrate, and 3 is led chip, and 4 is scaling powder, and 5 is alloy thin layer.
Embodiment
Further specify the present invention in conjunction with the accompanying drawings below by embodiment.
Embodiment 1:
The solid brilliant material that the present invention adopts can be used with the form of tin cream, and the flow process of the enforcement that it is concrete is as follows:
SAC alloy with 83% is made into alloying pellet and is mixed into tin cream as crystal-bonding adhesive with scaling powder TACFlux026, with automatic solid brilliant machine with 1 of tin cream to PCB substrate 2, suction nozzle by automatic solid brilliant machine is placed on led chip 3 on the tin cream 1 and makes the tin cream 1 chip under form the uniform thin layer of one deck by the downforce of suction nozzle, select for use with having programing function, the reflow machine of accurate temperature controlling heats module according to the desired heating curves of product specification book of scolder (makes the tin cream fusing, scaling powder volatilizees) and cooling, promptly realized the solid crystalline substance of led chip on the PCB substrate.The concrete heating period heats up with 1 ℃/second speed, up to 240 ℃ of peak temperatures, through certain hour, with 2-4 ℃/second speed cooling.The fusing point of scolder is 217 ℃, and certain hour refers to that the whole time that is in liquid phase is the 45-90 time of second.
Embodiment 2:
The solid brilliant material that the present invention adopts can be with the form of alloy-layer and PCB substrate in conjunction with application, and the flow process of the enforcement that it is concrete is as follows:
The SAC alloy of appropriate proportioning is made into alloys target, is deposited on the solid brilliant support in crystal bonding area territory formation one deck alloy thin layer with PVD technology.With the syringe-type point gum machine with 4 of scaling powders to the alloy-layer 5 in crystal bonding area territory, it is to make the scaling powder under the chip form one deck thin layer uniformly that led chip 3 is placed on the tin cream by chip self gravitation and surface tension, select for use with having programing function, the reflow machine of accurate temperature controlling heats module according to the desired curve of product specification book of scolder (makes the alloy-layer fusing, scaling powder volatilizees) and cooling, promptly realized the solid crystalline substance of led chip on the PCB substrate.The concrete heating period heats up with 1 ℃/second speed, up to 240 ℃ of peak temperatures, through certain hour, with 2-4 ℃/second speed cooling.The fusing point of scolder is 217 ℃, and certain hour refers to that the whole time that is in liquid phase is the 45-90 time of second.

Claims (7)

1. the die-bonding method of a LED is characterized in that concrete steps are as follows:
Tin, silver and copper are mixed and made into alloy in proportion, the gained alloy can directly be made into alloy thin layer or be mixed with into tin cream in proportion with scaling powder on the PCB electrode of substrate, scaling powder or tin cream are put on the PCB electrode of substrate, led chip is positioned on scaling powder or the tin cream again, and exert pressure and make under the led chip scaling powder or tin cream form one deck thin layer, adopt firing equipment described mixed layer to be heated to the fusing of alloy tin cream according to the temperature curve of optimizing, the scaling powder volatilization, cool off, promptly finish the solid crystalline substance of LED.
2. the die-bonding method of LED according to claim 1 is characterized in that described alloy is alloying pellet or alloy thin layer.
3. the die-bonding method of LED according to claim 1 is characterized in that in the described alloy, and tin, silver and copper three's ratio is 95.5: 3.8: 0.7 or 96.5: 3: 0.5.
4. the die-bonding method of LED according to claim 1 is characterized in that described alloy thin layer can be grown by the method for gas phase physical deposition to obtain on the PCB electrode of substrate.
5. the die-bonding method of LED according to claim 1 is characterized in that described scaling powder adopts among the TACFlux02 of Indium company or the nf260 any.
6. the die-bonding method of LED according to claim 1 is characterized in that the ratio of alloy and scaling powder is 84 in the described tin cream: 16--90: 10.
7. the die-bonding method of LED according to claim 1 is characterized in that described firing equipment is reflow machine or heating platform.
CN200910201265A 2009-12-17 2009-12-17 LED (Liquid Emitting Diode) crystal grain fixing method Pending CN101740712A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200910201265A CN101740712A (en) 2009-12-17 2009-12-17 LED (Liquid Emitting Diode) crystal grain fixing method

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Application Number Priority Date Filing Date Title
CN200910201265A CN101740712A (en) 2009-12-17 2009-12-17 LED (Liquid Emitting Diode) crystal grain fixing method

Publications (1)

Publication Number Publication Date
CN101740712A true CN101740712A (en) 2010-06-16

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102255033A (en) * 2011-07-14 2011-11-23 佛山市蓝箭电子有限公司 High-power LED (Light-Emitting Diode) encapsulating structure and encapsulating method
CN102442778A (en) * 2010-09-30 2012-05-09 惠州晶宝光电科技有限公司 Fluorescent glass and preparation method and application thereof
CN103456868A (en) * 2013-09-09 2013-12-18 昆山奥德鲁自动化技术有限公司 Method for packaging large-power LED chip
CN103972379A (en) * 2013-01-29 2014-08-06 世光国际贸易有限公司 Light-emitting device having light-emitting diode
CN104752596A (en) * 2013-12-30 2015-07-01 江西省晶瑞光电有限公司 LED flip chip die attach method
CN105098044A (en) * 2015-09-16 2015-11-25 福建天电光电有限公司 LED (Light-Emitting Diode) packaging device with inverted structure and manufacturing method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102442778A (en) * 2010-09-30 2012-05-09 惠州晶宝光电科技有限公司 Fluorescent glass and preparation method and application thereof
CN102442778B (en) * 2010-09-30 2014-06-04 惠州晶宝光电科技有限公司 Fluorescent glass and preparation method and application thereof
CN102255033A (en) * 2011-07-14 2011-11-23 佛山市蓝箭电子有限公司 High-power LED (Light-Emitting Diode) encapsulating structure and encapsulating method
CN102255033B (en) * 2011-07-14 2013-04-10 佛山市蓝箭电子股份有限公司 High-power LED (Light-Emitting Diode) encapsulating structure and encapsulating method
CN103972379A (en) * 2013-01-29 2014-08-06 世光国际贸易有限公司 Light-emitting device having light-emitting diode
WO2014127594A1 (en) * 2013-01-29 2014-08-28 世光国际贸易有限公司 Light-emitting device having light-emitting diode
CN103456868A (en) * 2013-09-09 2013-12-18 昆山奥德鲁自动化技术有限公司 Method for packaging large-power LED chip
CN104752596A (en) * 2013-12-30 2015-07-01 江西省晶瑞光电有限公司 LED flip chip die attach method
CN105098044A (en) * 2015-09-16 2015-11-25 福建天电光电有限公司 LED (Light-Emitting Diode) packaging device with inverted structure and manufacturing method thereof
CN105098044B (en) * 2015-09-16 2018-06-26 福建天电光电有限公司 LED packagings and its manufacturing method with inverted structure

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Application publication date: 20100616