CN111063784A - LED lamp bead preparation method - Google Patents
LED lamp bead preparation method Download PDFInfo
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- CN111063784A CN111063784A CN201911388454.XA CN201911388454A CN111063784A CN 111063784 A CN111063784 A CN 111063784A CN 201911388454 A CN201911388454 A CN 201911388454A CN 111063784 A CN111063784 A CN 111063784A
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- led
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
The invention provides a preparation method of an LED lamp bead, which comprises the following steps: s10, arranging the LED chips on the surface of the substrate according to a rule, wherein the surface of the light-emitting side of the LED chips faces upwards; s20, dispensing silica gel on the light-emitting side surface of the LED chip; s30, sequentially attaching the fluorescent film pieces cut into preset sizes to the surfaces of the LED chips to cover the light emitting surfaces of the LED chips and form a triangular-like silica gel layer on the connecting interface of the fluorescent film pieces and the LED chips; s40, filling high-reflection white glue between the LED chips until the height of the LED chips is equal to that of the fluorescent film; and S50, cutting according to the cutting channels among the LED chips to obtain single LED lamp beads. The fluorescent powder is covered on the light-emitting side surface of the LED chip in a film pasting mode, so that the light-emitting uniformity of the LED lamp bead is improved, and the light spots of the prepared LED lamp bead are uniform; and a triangular silica gel-like layer is formed on the connecting interface of the fluorescent film and the LED chip, so that the brightness of the LED lamp bead is greatly improved.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a preparation method of an LED lamp bead.
Background
In the process of packaging the blue light LED chip into the white light LED lamp bead, fluorescent powder needs to be packaged on the surface of the blue light LED chip, and white light is emitted under the excitation of blue light. At present, the packaging mode of fluorescent powder comprises a fluorescent powder spot technology and a fluorescent powder spraying technology, but the phenomenon that the fluorescent powder is not uniform on the surface or around an LED chip can occur in the two technologies, so that light spots of an LED lamp bead are not uniform.
Disclosure of Invention
In order to overcome the defects, the invention provides a preparation method of an LED lamp bead, which effectively solves the technical problem of uneven light spots of the LED lamp bead.
The technical scheme provided by the invention is as follows:
a preparation method of an LED lamp bead comprises the following steps:
s10, arranging LED chips on the surface of the substrate according to a rule, wherein the surfaces of the light-emitting sides of the LED chips face upwards;
s20, dispensing silica gel on the light-emitting side surface of the LED chip;
s30, sequentially attaching the fluorescent film pieces cut into preset sizes to the surfaces of the LED chips, covering the light-emitting surfaces of the LED chips, and forming a triangular-like silica gel layer on the connection interface of the fluorescent film pieces and the LED chips;
s40, filling high-reflection white glue between the LED chips until the height of the LED chips is equal to that of the fluorescent film;
and S50, cutting according to the cutting channels among the LED chips to obtain single LED lamp beads.
In the preparation method of the LED lamp bead provided by the invention, at least the following beneficial effects can be brought:
1. the fluorescent powder is covered on the light-emitting side surface of the LED chip in a film pasting mode, so that the light-emitting uniformity of the LED lamp bead is improved, and the light spots of the prepared LED lamp bead are uniform;
2. a triangular-like silica gel layer is formed on a connection interface of the fluorescent film and the LED chip, so that the brightness of the LED lamp bead is greatly improved;
3. high-reflection white glue is arranged around the LED chip, so that the LED chip emitting light from five surfaces is improved to emit light from a single surface;
4. when the LED chip is a silicon substrate, the light absorption problem of the silicon substrate can be effectively improved by the high-reflection white glue arranged around the LED chip.
Drawings
Fig. 1 to 4 are schematic flow charts of an embodiment of a method for manufacturing a white light LED chip according to the present invention.
FIGS. 5 to 6 are schematic flow charts of another embodiment of a method for manufacturing a white light LED chip according to the present invention.
Reference numerals:
1-substrate, 2-LED chip, 3-fluorescent membrane, 4-silica gel layer, 5-high reflection white glue and 6-lens.
Detailed Description
In order to more clearly illustrate the embodiment of the present invention or the technical solutions in the prior art, the following description will explain embodiments of the present invention with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
As shown in fig. 1 to 4, an embodiment of a method for preparing an LED lamp bead according to the present invention is schematically illustrated in flow chart, and as shown in the drawing, the method comprises:
s10 regularly arranges the LED chips 2 on the surface of the substrate 1 with the light-emitting side surfaces of the LED chips 2 facing upward, as shown in fig. 1. Specifically, the shape and the pitch of the arrangement of the LED chips 22 are adjusted according to actual requirements, and are not limited herein. The substrate 1 may be a ceramic substrate, PCT, EMC, SMC, or the like, and is selected according to the actual situation.
S20 dispensing silicone gel on the light-emitting side surface of the LED chip 2. The amount of the point silica gel is not limited quantitatively, as long as the point silica gel occupies 0.5-0.75 of the surface area of the LED chip 2 after the point silica gel naturally flows away from the light-emitting side surface of the LED chip 2, and the viscosity of the silica gel is 1500-4500 m.pas.
S30, the fluorescent film 3 cut into a predetermined size is sequentially attached to the surface of each LED chip 2 to cover the light emitting surface of the LED chip 2, and a triangle-like silica gel layer 4 is formed on the interface between the fluorescent film 3 and the LED chip 2, as shown in fig. 2. In order to ensure the light emitting effect of the LED chip 2, the area of the fluorescent film 3 is larger than that of the LED chip 2, and the length and width of the fluorescent film 3 is 50-300 μm larger than that of the LED chip 2, so that the fluorescent film 3 can fully cover the light emitting surface of the LED chip 2. The fluorescent film sheet 3 is prepared from silica gel and fluorescent powder in a certain mass ratio (silica gel: yellow powder: red powder: 1: 0.8-2.2: 0.1-1.6), and has a thickness of 30-150 μm. In the preparation process, firstly, uniformly stirring silica gel and fluorescent powder in a certain mass ratio, defoaming in vacuum, and coating the surface of a support film to form a fluorescent adhesive layer with a preset thickness; then, baking the fluorescent glue layer (for example, baking at 150 ℃ for 1h) to obtain the whole fluorescent film sheet 3; and finally, cutting the whole fluorescent film 3 according to the size of the LED chip 2 to obtain the fluorescent film 3 with a preset size. It should be noted that, the fluorescent film 3 with a preset size is further cut according to the distribution of the electrodes on the light-emitting side surface of the LED chip 2, so as to obtain the fluorescent film 3 matching with the light-emitting side surface of the LED chip 2, for example, when the LED chip 2 is a vertical structure chip, the electrode part on the light-emitting side surface of the chip needs to be removed and cut.
S40 filling the highly reflective white glue 5 between the LED chips 2 until it is level with the height of the fluorescent film 3, as shown in fig. 3.
S50, cutting according to the cutting channels among the LED chips 2 to obtain single LED lamp beads, as shown in FIG. 4.
In another embodiment, after step S40, a step of pressing a film on the surface of the LED chip 2 to form a lens 6 is further included, as shown in fig. 5, and then cutting to obtain a single LED bead as shown in fig. 6.
In one example, the method comprises the following steps:
1. weighing silica gel, yellow powder and red powder in a mass ratio of 1:1:0.4, uniformly stirring and defoaming in vacuum; the phosphor layer was scraped off by placing it on a support film, the height of the scraper was set, a phosphor sheet having a thickness of 100 μm was scraped off, and it was baked at a temperature of 150 ℃ for 1 hour. And cutting the baked fluorescent film to obtain single fluorescent film with the size (length and width) larger than the chip by 150 microns.
2. And turning the fluorescent membrane from the surface of the support membrane to the blue membrane, and turning the fluorescent membrane from the blue membrane to the high-temperature bubble foaming membrane.
3. And eutectic-crystallizing the inverted 57mil chip on the ceramic substrate according to a certain distance, and cleaning flux slag.
4. And (3) baking the high-temperature foaming film containing the fluorescent membrane in an oven at 150 ℃ for 5min to ensure that the fluorescent membrane and the high-temperature foaming film have no viscosity basically, and the fluorescent membrane can be taken out from the high-temperature foaming film.
5. And (3) dispensing the prepared transparent silica gel on the light-emitting side surface of the LED chip, and controlling the gel amount to be 0.6 of the surface area of the light-emitting side of the LED chip after the gel naturally flows open.
6. And (3) attaching a single fluorescent film piece to the light-emitting side surface of the LED chip, and baking in an oven at 150 ℃ for 1h, wherein the silica gel on the surface of the chip flows away along the boundary of the fluorescent film piece and the LED chip due to the extrusion of the fluorescent film piece, so that a triangle-like silica gel layer (bowl-shaped) shown in FIG. 2 is formed.
7. And scratching the stirred high-reflection white glue among the LED chips, determining that the high-reflection white glue does not overflow to the surface of the fluorescent film piece, and baking for 2 hours at 150 ℃. Of course, if the high-reflection white glue overflows the fluorescent film, the high-reflection white glue can be ground subsequently to remove the high-reflection white glue on the surface of the fluorescent film.
8. And testing, cutting, sorting, braiding and warehousing the ceramic substrate. Before this, if a lens is required, a lamination operation and baking are performed after the baking of the high reflection white glue is completed.
In another example, the method comprises the steps of:
1. weighing silica gel, yellow powder and red powder according to the mass ratio of 1:1.5:0.43, uniformly stirring and defoaming in vacuum; the phosphor layer was scraped off by placing it on a support film, the height of the scraper was set, a phosphor sheet having a thickness of 100 μm was scraped off, and it was baked at a temperature of 150 ℃ for 1 hour. Cutting the baked fluorescent film to obtain single fluorescent film with size (length and width) 150 μm larger than the chip; and cutting the electrode hole position on the surface of the fluorescent film sheet by laser.
2. And turning the fluorescent membrane from the surface of the support membrane to the blue membrane, and turning the fluorescent membrane from the blue membrane to the high-temperature bubble foaming membrane.
3. Eutectic crystal the silicon-based 56mil chip on the ceramic substrate according to a certain distance, clean the flux slag, and connect the electrode of the chip with the ceramic substrate by using gold wires.
4. And (3) baking the high-temperature foaming film containing the fluorescent membrane in an oven at 150 ℃ for 5min to ensure that the fluorescent membrane and the high-temperature foaming film have no viscosity basically, and the fluorescent membrane can be taken out from the high-temperature foaming film.
5. And (3) dispensing the prepared transparent silica gel on the light-emitting side surface of the chip, and controlling the gel amount to be 0.6 of the surface area of the light-emitting side of the chip after the gel naturally flows open.
6. And (3) attaching a single fluorescent film piece to the light-emitting side surface of the chip, and baking in an oven at 150 ℃ for 1h, wherein the silica gel on the surface of the chip flows away along the boundary of the fluorescent film piece and the LED chip due to the extrusion of the fluorescent film piece, so that a triangle-like silica gel layer (bowl-shaped) shown in FIG. 2 is formed.
7. And scratching the stirred high-reflection white glue among the LED chips, determining that the high-reflection white glue does not overflow to the surface of the fluorescent film piece, and baking for 2 hours at 150 ℃. Of course, if the high-reflection white glue overflows the fluorescent film, the high-reflection white glue can be ground subsequently to remove the high-reflection white glue on the surface of the fluorescent film.
8. And testing, cutting, sorting, braiding and warehousing the ceramic substrate. Before this, if a lens is required, a lamination operation and baking are performed after the baking of the high reflection white glue is completed.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (6)
1. The preparation method of the LED lamp bead is characterized by comprising the following steps:
s10, arranging LED chips on the surface of the substrate according to a rule, wherein the surfaces of the light-emitting sides of the LED chips face upwards;
s20, dispensing silica gel on the light-emitting side surface of the LED chip;
s30, sequentially attaching the fluorescent film pieces cut into preset sizes to the surfaces of the LED chips, covering the light-emitting surfaces of the LED chips, and forming a triangular-like silica gel layer on the connection interface of the fluorescent film pieces and the LED chips;
s40, filling high-reflection white glue between the LED chips until the height of the LED chips is equal to that of the fluorescent film;
and S50, cutting according to the cutting channels among the LED chips to obtain single LED lamp beads.
2. The method for preparing the LED lamp bead according to claim 1, wherein the length-width ratio of the fluorescent film is 50-300 μm greater than the length and width of the LED chip.
3. The method for preparing the LED lamp bead according to claim 1 or 2, further comprising, before step S10:
s01, uniformly stirring silica gel and fluorescent powder in a certain mass ratio, and coating the surface of a support film to form a fluorescent adhesive layer with a preset thickness;
s02, baking the fluorescent glue layer to obtain a whole fluorescent membrane;
s03, cutting the whole fluorescent film according to the size of the LED chip to obtain the fluorescent film with the preset size.
4. The method for preparing an LED lamp bead according to claim 3, after the step S03, further comprising:
s04, further cutting the fluorescent film sheet with the preset size according to the distribution of the electrodes on the light-emitting side surface of the LED chip to obtain the fluorescent film sheet matched with the light-emitting side surface of the LED chip.
5. The method for preparing the LED lamp bead according to claim 1, 2 or 4, wherein in step S20, the silica gel occupies 0.5-0.75 of the surface area of the LED chip after naturally flowing away from the light-emitting side surface of the LED chip, and the viscosity of the silica gel is 1500-4500 m.pas.
6. The method for preparing an LED lamp bead according to claim 1, 2 or 4, further comprising, after step S40:
s41, pressing a film on the surface of the LED chip to form a lens.
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| CN201911388454.XA CN111063784A (en) | 2019-12-30 | 2019-12-30 | LED lamp bead preparation method |
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| CN201911388454.XA CN111063784A (en) | 2019-12-30 | 2019-12-30 | LED lamp bead preparation method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785710A (en) * | 2020-07-28 | 2020-10-16 | 江西省晶能半导体有限公司 | LED lamp bead and preparation method thereof |
| CN112349824A (en) * | 2020-11-27 | 2021-02-09 | 江西瑞晟光电科技有限公司 | Preparation method of LED lamp bead |
| CN112510137A (en) * | 2020-12-10 | 2021-03-16 | 广东聚科照明股份有限公司 | Production method of integrated lamp bead |
| CN112614923A (en) * | 2020-12-17 | 2021-04-06 | 重庆工程职业技术学院 | White light LED chip packaging structure and manufacturing method thereof |
| CN112951970A (en) * | 2020-12-31 | 2021-06-11 | 广东晶科电子股份有限公司 | Light-emitting device manufacturing method and light-emitting device |
| CN113764547A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Manufacturing method of Mini-LED device |
| CN113809217A (en) * | 2021-09-17 | 2021-12-17 | 福建天电光电有限公司 | LED packaging method |
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| CN111785710A (en) * | 2020-07-28 | 2020-10-16 | 江西省晶能半导体有限公司 | LED lamp bead and preparation method thereof |
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| CN113764547A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Manufacturing method of Mini-LED device |
| CN113809217A (en) * | 2021-09-17 | 2021-12-17 | 福建天电光电有限公司 | LED packaging method |
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