CN117594726A - Preparation method of LED packaging device - Google Patents
Preparation method of LED packaging device Download PDFInfo
- Publication number
- CN117594726A CN117594726A CN202311848386.7A CN202311848386A CN117594726A CN 117594726 A CN117594726 A CN 117594726A CN 202311848386 A CN202311848386 A CN 202311848386A CN 117594726 A CN117594726 A CN 117594726A
- Authority
- CN
- China
- Prior art keywords
- temperature
- led
- packaging
- resistant pet
- pet double
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 155
- 238000002360 preparation method Methods 0.000 title claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 106
- 239000002184 metal Substances 0.000 claims abstract description 106
- 239000000084 colloidal system Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000002390 adhesive tape Substances 0.000 claims abstract description 34
- 238000005520 cutting process Methods 0.000 claims abstract description 27
- 238000003825 pressing Methods 0.000 claims abstract description 24
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 239000000853 adhesive Substances 0.000 claims abstract description 8
- 230000001070 adhesive effect Effects 0.000 claims abstract description 8
- 238000010030 laminating Methods 0.000 claims abstract description 6
- 229910000679 solder Inorganic materials 0.000 claims description 28
- 238000005476 soldering Methods 0.000 claims description 22
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 20
- 238000000227 grinding Methods 0.000 claims description 19
- 239000008393 encapsulating agent Substances 0.000 claims description 17
- 230000007306 turnover Effects 0.000 claims description 17
- 238000000059 patterning Methods 0.000 claims description 14
- 230000001680 brushing effect Effects 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000007731 hot pressing Methods 0.000 claims description 8
- 229910000831 Steel Inorganic materials 0.000 claims description 7
- 239000010959 steel Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005496 tempering Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 109
- 238000005538 encapsulation Methods 0.000 description 39
- 239000003292 glue Substances 0.000 description 26
- 238000010586 diagram Methods 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 239000004033 plastic Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 239000007769 metal material Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000010330 laser marking Methods 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a preparation method of an LED packaging device, which comprises the following steps: sticking a layer of high-temperature-resistant PET double-sided adhesive tape on the top surface of the temporary carrier plate; forming a plurality of patterned metal layers on the high-temperature-resistant PET double-sided adhesive tape; laminating the high-temperature-resistant PET double-sided tape by an adhesive pressing process to form packaging colloid for coating the LED chip; cutting the packaging colloid along the line through a cutting mechanism and forming a plurality of LED packaging devices on the temporary carrier plate; separating the temporary carrier plate by a film tearing mode; covering a layer of blue film on the top surfaces of the LED packaging devices; and removing the high-temperature-resistant PET double-sided adhesive tape. According to the invention, the high-temperature-resistant PET double-sided adhesive tape is adopted to prepare the package of the LED chip in a matching way, so that the whole preparation process is simple, and the cost is saved.
Description
Technical Field
The invention mainly relates to the technical field of chip packaging, in particular to a preparation method of an LED packaging device.
Background
The existing LED packaging device mainly comprises an LED chip welded on a substrate, a plastic packaging colloid packaged on the substrate, a circuit layer preset on the substrate according to the specification and the size of the LED chip, and a metal layer arranged on the surface of the substrate so as to mount the LED chip on the substrate in a butt joint manner, but the packaging mode requires processing of the circuit on the substrate, so that the preparation process of the LED packaging device is complex and complicated, and the preparation efficiency of the LED packaging device is affected.
The current preparation method of the LED packaging device comprises the steps of packaging the LED chips on the temporary carrier plate, and stripping the temporary carrier plate after packaging is completed, so that the temporary carrier plate can be recycled and reused, but the current preparation process requires depositing a passivation layer on the temporary carrier plate, then removing the passivation layer to form a plurality of LED packaging devices, the passivation layer needs to be deposited, and the passivation layer needs to be removed by adopting an etching process, so that the whole preparation process needs to be completed by means of finer control equipment, and the preparation method of the LED packaging device has higher cost and more complex process.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a preparation method of an LED packaging device, wherein the preparation method is based on the cooperation of a high-temperature-resistant PET double-sided tape to complete the packaging of an LED chip, so that the whole process method is simple and the cost is lower.
The invention provides a preparation method of an LED packaging device, which comprises the following steps:
sticking a layer of high-temperature-resistant PET double-sided adhesive tape on the top surface of the temporary carrier plate;
forming a plurality of patterned metal layers on the high-temperature-resistant PET double-sided adhesive tape;
bonding pads in a plurality of LED chips correspondingly on tin soldering points of the corresponding patterned metal layer by adopting low-temperature solder paste;
laminating the high-temperature-resistant PET double-sided tape by an adhesive pressing process to form packaging colloid for coating the LED chip;
a circuit is marked on the packaging colloid, the packaging colloid is cut along the circuit through a cutting mechanism, and a plurality of LED packaging devices are formed on the temporary carrier plate;
separating the temporary carrier plate by a film tearing mode, so that the temporary carrier plate is peeled off from the high-temperature-resistant PET double-sided adhesive tape;
covering a layer of blue film on the top surfaces of the LED packaging devices;
and heating and pressurizing the packaging device with the blue film by adopting a turnover machine, and removing the high-temperature-resistant PET double-sided adhesive tape.
The temporary carrier plate can be made of sapphire, or a silicon wafer or a glass sheet; the temperature resistance of the high-temperature-resistant PET double-sided adhesive tape is over 200 ℃.
The forming of the plurality of patterned metal layers on the high temperature resistant PET double-sided tape comprises the following steps:
forming a layer of patterning mask on the high-temperature-resistant PET double-sided tape, and forming a plurality of patterning metal layers on the high-temperature-resistant PET double-sided tape by vapor deposition based on the patterning mask.
The bonding pads in the LED chips are correspondingly bonded on the soldering points of the corresponding patterned metal layer by adopting the low-temperature solder paste, and the method comprises the following steps:
setting a chip mounting position on each patterned metal layer, and coating solder paste on each chip mounting position to form a soldering point;
bonding pads in a plurality of LED chips correspondingly to corresponding soldering points, and curing the solder paste through a tempering furnace, wherein the melting point of the low Wen Xigao is 150-170 ℃.
The solder paste is coated at each chip mounting position to form solder points specifically:
carrying out tin paste brushing operation on the chip mounting position in a steel mesh tin brushing mode;
or dispensing solder paste on the chip mounting positions corresponding to the patterned metal layers through dispensing equipment.
The forming of the packaging colloid for coating the LED chip by laminating the high-temperature-resistant PET double-sided adhesive tape through a glue pressing process comprises the following steps:
covering initial colloid on the patterned metal layer, so that the initial colloid covers the surface of the patterned metal layer and the LED chip;
and continuously hot-pressing the initial colloid for a first preset time by a preset colloid pressing machine under preset pressing pressure and preset baking temperature to form the packaging colloid.
The circuit is depicted on the encapsulation colloid, the encapsulation colloid is cut along the circuit by a cutting mechanism, and a plurality of LED encapsulation devices are formed on the temporary carrier plate, and the circuit comprises:
a circuit is marked on the top surface of the packaging colloid, the packaging colloid is cut along the circuit through a grinding wheel, and a plurality of wire grooves are formed on the packaging colloid based on cutting;
the packaging colloid is divided into a plurality of packaging layers based on the plurality of wire grooves, so that a plurality of LED packaging devices are formed on the temporary carrier plate.
The tearing force for separating the temporary carrier plate by the tearing mode is 3-6 kg.
The adoption upset machine carries out heating pressurization to the encapsulation device of taking the blue membrane and handles, and it includes to get rid of high temperature resistant PET double faced adhesive tape:
placing the packaging device with the blue film on a downloading table of a turnover machine together, wherein one surface of the blue film in the packaging device with the blue film is arranged on the upper surface, and one surface of the high-temperature-resistant PET double-sided tape in the packaging device with the blue film is arranged on the lower surface, and the temperature of the turnover machine is controlled between 55 ℃ and 65 ℃;
the upper carrier of the turnover machine is controlled to be pressed downwards, the pressure of the upper carrier is controlled to be between 5 and 10KG, and the pressing time of the upper carrier is controlled to be between 20 and 30 seconds;
the overturning machine is controlled to overturn so that one surface of the blue film in the packaging device with the blue film is arranged down, one surface of the high-temperature-resistant PET double-sided tape in the packaging device with the blue film is arranged up, the whole packaging device with the blue film is placed on a jig disc with vacuum suction, the surface of the blue film is tightly sucked by the jig disc through suction, and the high-temperature-resistant PET double-sided tape is removed in a tearing mode.
The tearing force for removing the high-temperature-resistant PET double-sided adhesive tape by adopting the tearing mode is 3-6 kg.
According to the preparation method, the LED chips are packaged on the temporary carrier plate matched with the high-temperature-resistant PET double-sided adhesive tape, the temporary carrier plate is peeled off based on the high-temperature-resistant PET double-sided adhesive tape after packaging is completed, the temporary carrier plate can be recovered and reused, the packaging operation of the temporary carrier plate for carrying the LED chips is arranged, and the process of processing circuits on the temporary carrier plate can be reduced, so that the process of LED packaging devices is simplified, and a plurality of LED packaging devices are packaged on the temporary carrier plate at the same time, so that the preparation efficiency of the LED packaging devices is improved. The high-precision patterned metal layer can be manufactured by combining the high-temperature-resistant PET double-sided tape through a chip process, so that the simplification and effective encapsulation of a small-size chip are realized, and the device is free of a substrate.
The LED packaging device prepared based on the preparation method reduces the substrate structure, simplifies the overall structure of the LED device, enables the LED packaging device to adapt to the installation requirement of a miniaturized device, and simultaneously is matched with the patterned metal layer, so that the LED packaging device is convenient to attach to an external circuit board, and the practicability and the reliability of the LED packaging device are improved. The wafer level package realized by the preparation method is beneficial to saving the process, improving the yield, and the LED package device is provided with a bonding pad, the Gap distance of the patterned metal layer can be designed to be larger, and the patterned metal layer can be directly welded on a circuit board for use.
The high-temperature-resistant PET double-sided adhesive tape can be used for removing the temporary carrier plate in a tearing manner, and the high-temperature-resistant PET double-sided adhesive tape is removed in a tearing manner in a packaging device with a blue film, so that the whole process is simple and convenient to operate, and meanwhile, the tearing manner can be completed without high-precision equipment, so that the manufacturing cost of the whole preparation process is reduced, and the recycling of the temporary carrier plate is realized.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings which are required in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method of fabricating an LED package device in an embodiment of the invention;
FIG. 2 is a schematic diagram of a temporary carrier preparation state in an embodiment of the present invention;
FIG. 3 is a schematic diagram of a patterned metal preparation state in an embodiment of the present invention;
FIG. 4 is a schematic diagram of a soldering point preparation state in an embodiment of the present invention;
FIG. 5 is a schematic diagram of an LED chip bonding state according to an embodiment of the present invention;
FIG. 6 is a schematic diagram showing a preparation state of an encapsulant according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a package colloid dividing state according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a preparation state after separating a temporary carrier plate according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of a preparation state after covering a blue film in an embodiment of the present invention;
FIG. 10 is a schematic diagram showing a state of preparation of a double-sided tape with a high temperature resistant PET removed in an embodiment of the invention;
fig. 11 is a schematic structural diagram of an LED package device according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 1 shows a flowchart of a method for manufacturing an LED package device according to an embodiment of the present invention, where the method includes:
s11: a layer of high-temperature-resistant PET double-sided tape 2 is stuck on the top surface of the temporary carrier plate 1;
specifically, the temporary carrier plate 1 may be made of sapphire, a silicon wafer, a glass sheet, or the like, and the temporary carrier plate 1 is used for carrying components such as a metal layer, an LED chip 4, an encapsulation colloid 5, and the like, so as to facilitate the molding preparation of the LED package device. The temporary carrier may be a circular planar carrier.
Specifically, fig. 2 is a schematic diagram of a preparation state of a temporary carrier in an embodiment of the present invention, where the high temperature resistant PET double-sided tape 2 is a double-sided adhesive film, one side of the high temperature resistant PET double-sided tape 2 may be adhered to the temporary carrier based on adhesion, and the other side may be matched to encapsulate an LED device, where the high temperature resistant PET double-sided tape 2 is resistant to temperatures above 200 ℃, and the thickness of the high temperature resistant PET double-sided tape 2 is controlled between 100um and 200um, i.e. the thickness of the high temperature resistant PET double-sided tape may be 100um, 110um, 150um, 200um, and so on.
Because the high temperature resistant PET double-sided tape 2 belongs to a general product, the high temperature resistant PET double-sided tape is directly used as a temporary intermediate film layer, the effect of adhering and bearing the patterned metal layer can be achieved, the cost is low, the high temperature resistant PET double-sided tape can be used as a cutting film after the glue pressing packaging, the operation is simple, and the manual tearing can be realized.
S12: forming a plurality of patterned metal layers 3 on the high-temperature-resistant PET double-sided adhesive tape 2;
specifically, fig. 3 is a schematic diagram of a preparation state of patterned metal in the embodiment of the present invention, first, a patterned mask is formed on the high temperature resistant PET double-sided tape 2, and a plurality of patterned metal layers 3 are formed on the high temperature resistant PET double-sided tape 2 by vapor deposition based on the patterned mask.
Specifically, photoresist is coated on the high temperature resistant PET double-sided tape 2 in a spin mode, and a patterning mask of the high temperature resistant PET double-sided tape 2 at the exposed part is formed on the photoresist through exposure and development.
Coating photoresist on the surface of the high-temperature-resistant PET double-sided tape 2 by a spin coating method, covering a patterned baffle on the surface of the photoresist, wherein an opening is formed in the patterned baffle, and the patterned baffle can shade part of the photoresist and expose part of the photoresist;
and the photoresist exposed outside can be fully contacted with light by arranging a parallel light source to irradiate the photoresist, so that the exposure operation is completed.
Specifically, after the patterning baffle is removed, the photoresist is immersed in the developing solution, so that the photoresist after exposure treatment can fully contact with the developing solution and react with the developing solution, and after exposure treatment, the reaction rate of the developing solution and the photoresist can be improved, thereby realizing the effect of rapid ablation of the exposed part of the photoresist.
Further, the photoresist is subjected to patterning treatment, so that a patterned mask is formed on the high-temperature-resistant PET double-sided tape 2, and a plurality of patterned metal layers 3 are formed on the high-temperature-resistant PET double-sided tape exposed by the patterned mask by evaporation.
Specifically, a metal material is evaporated on the patterned mask through an electron beam evaporation bench to form an initial metal layer covering the high-temperature-resistant PET double-sided tape 2 and photoresist, namely, the metal material is deposited on the patterned mask to form an initial metal layer, and the initial metal layer is self-adaptively attached to the patterned mask and the surface of the high-temperature-resistant PET double-sided tape exposed based on the patterned mask.
Further, the plurality of patterned metal layers 3 are formed on the high temperature resistant PET double-sided tape 2 by deposition of the electron beam evaporation bench, and the thickness of the plurality of patterned metal layers 3 is between 2 μm and 3 μm by adjusting the evaporation rate, the working distance and the working time of the electron beam evaporation bench, so that the plurality of patterned metal layers 3 can meet the packaging requirements of the corresponding LED chips 4.
Specifically, the metal material of the electron beam evaporation table machine is a composite metal material, and the composite metal material includes platinum Pt, copper Cu, chromium Cr and other metal materials, where the platinum Pt, copper Cu, chromium Cr may be mixed according to a ratio of 1:6:3, thereby forming a patterned metal layer 3 formed by composite metal materials on the high-temperature-resistant PET double-sided tape 2, and forming the patterned metal layer 3 on the surface of the high-temperature-resistant PET double-sided tape 2 can be better fixed on the surface of the high-temperature-resistant PET double-sided tape 2 due to the double-sided viscosity of the high-temperature-resistant PET double-sided tape 2.
Furthermore, the copper metal has good conductivity, the adhesion of the chromium metal to the silicon dioxide is good, the platinum metal can improve the deposition bonding performance between copper and chromium, and a composite metal material is formed by doping various metals, so that the patterned metal layer 3 can be formed on the high-temperature-resistant PET double-sided adhesive tape 2 in a deposition manner, the patterned metal layer 3 is ensured to have good stability and conductivity, and the encapsulation of the LED chip 4 can be satisfied.
Specifically, the patterned metal layer 3 is formed on the high temperature resistant PET double sided tape 2 by removing the patterned mask, and the patterned mask with the initialized metal layer is dissolved and eliminated based on a chemical solution by immersing the patterned mask in the chemical solution.
Further, after the patterned mask is removed, a plurality of patterned metal layers 3 are remained on the high temperature resistant PET double sided tape 2, and any one group of two adjacent patterned metal layers 3 are used for mounting and carrying the LED chip 4.
Further, by controlling the evaporation rate and evaporation time of the electron beam evaporation equipment, a plurality of patterned metal layers 3 with uniform thickness can be formed on the high-temperature-resistant PET double-sided tape 2, the consistency of the plurality of patterned metal layers 3 is improved, the preparation yield of the LED packaging device can be improved, and meanwhile the synchronous tin brushing operation on the plurality of patterned metal layers 3 is facilitated, so that the preparation efficiency of the LED packaging device is improved.
S13: bonding pads in a plurality of LED chips 4 correspondingly to soldering points of the corresponding patterned metal layer 3 by adopting low-temperature solder paste;
it should be noted that fig. 4 is a schematic diagram of a soldering point preparation state in the embodiment of the present invention, and fig. 5 is a schematic diagram of an LED chip bonding state in the embodiment of the present invention, where a low-temperature solder paste is used to cure the LED chip, the melting point of the low-temperature solder paste is between 150 ℃ and 170 ℃, the tolerance temperature of the high-temperature resistant PET double-sided tape 2 is above 200 ℃, and the whole solder paste curing LED chip 4 does not affect the high-temperature resistant PET double-sided tape 2 in the process of corresponding patterning the metal layer 3.
Specifically, a chip mounting position is set on each patterned metal layer 3, solder paste is coated on each chip mounting position to form soldering points 7, and bonding pads in a plurality of LED chips are correspondingly attached to the corresponding soldering points 7.
Specifically, according to the design of the LED package device, the mounting positions of the LED chips 4 are marked on the patterned metal layers 3 by a laser projection technology in combination with the specification and the size of the LED chips 4, the layout image of the LED package device is input into the laser projection device, and the mounting positions of the LED chips 4 are projected on the patterned metal layers 3 by the laser projection technology.
Further, by adjusting the laser power emitted by the laser projection device, the laser projection device can imprint the mounting positions of the LED chips 4 on the patterned metal layers 3, so that the patterned metal layers 3 on the high-temperature-resistant PET double-sided tape 2 can display the mounting positions of the LED chips 4, so as to mount the LED chips 4.
Specifically, the chip mounting position is marked on the patterned metal layer 3, solder paste is coated on the chip mounting position, the bonding pad of the LED chip 4 is correspondingly attached to the solder paste, and the solder paste is cured through a tempering furnace. The LED chip 4 is a flip-chip LED chip, which is attached to the patterned metal layer 3, and the solder paste is cured by a reflow oven.
Further, the spacing between any two phases of patterned metal layers 3 is larger than 100 μm, so as to avoid the situation that solder pastes of the soldering points 7 on two adjacent patterned metal layers 3 are contacted with each other, and electric leakage is caused.
The working parameters of the set point glue device comprise parameters such as a glue dispensing rate and the extrusion quantity of glue dispensing every time, tin paste is dispensed on the chip mounting positions corresponding to the patterned metal layers 3 through the glue dispensing device, glue dispensing operation is sequentially carried out on the chip mounting positions of the patterned metal layers 3 through the glue dispensing device, the glue dispensing positions of the glue dispensing device can be accurately controlled, so that all glue dispensing operations on the patterned metal layers 3 are completed, and therefore the LED chip mounting efficiency is improved.
Further, in this embodiment, the operation of brushing tin paste may be performed on the chip mounting position by brushing tin with a steel mesh, that is, by placing a steel mesh with a corresponding opening on the patterned metal layer 3, exposing the chip mounting position correspondingly to the outside through the steel mesh, and brushing tin paste on the steel mesh, so that the operation of brushing tin paste on the chip mounting position of the patterned metal layer 3 is completed, that is, the operation of filling tin paste on the chip mounting position corresponding to the patterned metal layer 3 is performed, so as to perform the operation of mounting the LED chip 4 on the paste.
Furthermore, the operation of coating the solder paste can be rapidly completed in a steel mesh tin brushing mode, so that the soldering points 7 are formed at the chip mounting positions of the patterned metal layers 3, the LED chips 4 are correspondingly attached to the soldering points 7, high Wen Huilu soldering operation can be simultaneously performed on the LED chips 4, and the mounting efficiency of the LED chips 4 is improved.
Further, a plurality of patterned metal layers 3 are formed by dividing a single metal layer, so that silk screens are covered on the surfaces of the patterned metal layers 3, synchronous tin brushing operation of the patterned metal layers 3 is achieved, tin brushing efficiency of the patterned metal layers 3 can be improved, batch transfer tin soldering operation of LED chips can be achieved by matching with an LED chip transfer plate, and therefore processing efficiency of LED chip tin soldering is improved. The consistency of solder paste on the patterned metal layers 3 can be improved through the wire mesh tin brushing operation, so that the reliability of the LED chip tin soldering operation is improved.
After the low-temperature solder paste is arranged at the positions corresponding to the patterned metal layers 3, bonding the bonding pads of the LED chips 4 to the chip mounting positions of the patterned metal layers 3 correspondingly, and curing the solder paste of the bonding pads of the LED chips 4 through a temperature return furnace, so that the LED chips 4 are fixed in a soldering manner, wherein the temperature in the temperature return furnace is lower than 200 ℃, namely, the temperature of the temperature return furnace is proper within 160-190 ℃. Because the temperature resistance of the high-temperature-resistant PET double-sided tape 2 is above 200 ℃, the high-temperature-resistant PET double-sided tape cannot be influenced in the process of curing the LED chip 4 in the corresponding patterned metal layer 3 by the temperature-returning furnace.
S14: and laminating the high-temperature-resistant PET double-sided tape 2 by an adhesive pressing process to form an encapsulation colloid 5 for coating the LED chip 4.
Specifically, fig. 6 is a schematic diagram of a preparation state of an encapsulation colloid in the embodiment of the present invention, a temporary surrounding dam is provided, a frame structure is formed by surrounding above the patterned metal layer 3 based on the high temperature resistant PET double sided tape 2, the frame structure is used for restricting the flow of the plastic encapsulation glue by pouring the plastic encapsulation glue into the frame structure formed by surrounding the surrounding dam, the plastic encapsulation glue is formed primarily by adjusting the environmental parameters where the plastic encapsulation glue is located, and the temporary surrounding dam is removed, so that an initial colloid is formed on the patterned metal layer 3.
Further, pouring the plastic package glue into a frame structure formed by enclosing the temporary enclosing plates, standing the plastic package glue for 10 minutes, keeping the environment where the plastic package glue is located as a dry environment, keeping the external environment between 80 ℃ and 100 ℃, and enabling the plastic package glue to be primarily cured and formed through standing.
Specifically, the hot-pressing equipment is used for carrying out press-fitting shaping on the plastic package glue, the size and the dimension of a press-fitting die of the hot-pressing equipment are adjusted, the temporary carrier plate 1 is fixed on a processing station of the hot-pressing equipment, the initial colloid formed by the plastic package glue is contained in the press-fitting die, and the hot-pressing equipment can carry out press-fitting shaping in the plastic package glue by adjusting the working parameters of the hot-pressing equipment.
Further, the glue press is set to continuously heat-press the initial glue for a first preset time under the preset pressing pressure and the preset baking temperature, so as to form the packaging glue 5.
The preset pressing pressure is P, and the value range of P is as follows: p is more than or equal to 3t and less than or equal to 5t;
the preset baking temperature is F, and the value range of F is as follows: f is more than or equal to 110 ℃ and less than or equal to 150 ℃;
the first preset time is T1, and the value range of T1 is as follows: t is more than or equal to 3h and less than or equal to 5h.
In this embodiment, the preset pressing pressure P is set to be 5T, the preset baking temperature F is 120 ℃, and the first preset time T1 is 4.5h, so that the initial adhesive body can be cured and formed to form the encapsulation adhesive body 5, and the combination of the encapsulation adhesive body 5, the high temperature resistant PET double sided tape 2 and the patterned metal layer 3 is good, so as to improve the encapsulation effect of the LED chip 4.
Further, the pressing mold can limit the shape change of the initial colloid, so that the initial colloid is completely contained in the pressing mold, and based on the pressing effect of the hot pressing equipment, the initial colloid can be completely attached to the inside of the pressing mold, and thus the molding can be performed quickly.
Furthermore, according to the packaging and light-emitting requirements of the LED chips 4, by preparing proper packaging colloid and synchronously performing plastic packaging on a plurality of LED chips 4, the light-emitting consistency of a plurality of prepared LED packaging devices can be ensured to be high, namely, the light-emitting consistency of the LED packaging devices prepared in the same batch is good, and the preparation yield of the LED packaging devices is improved.
It should be noted that, here, the encapsulant 5 is pressed above the LED chip 4, the encapsulant 5 may be one of epoxy resin, silica gel, silicone resin, a cake of gel, and a fluorescent film, and the thickness of the encapsulant 5 is controlled between 50um and 500um, that is, the thickness of the encapsulant 5 may be 50um, 60um, 100um, 200um, 300um, 400um, 500um, and so on. In the process of pressing the encapsulation colloid 5 on the LED chip 4, the temperature of the encapsulation colloid 5 is between 110 ℃ and 150 ℃, and a fusion reaction can not be generated between the encapsulation colloid 5 and the high-temperature-resistant PET double-sided tape 2 substantially, so that a good boundary line is formed between the encapsulation colloid 5 and the high-temperature-resistant PET double-sided tape 2, and the boundary line facilitates stripping between the high-temperature-resistant PET double-sided tape 2 and the encapsulation colloid 5.
S15: a circuit is marked on the encapsulation colloid 5, the encapsulation colloid 5 is cut along the circuit through a cutting mechanism, and a plurality of LED encapsulation devices are formed on the temporary carrier plate 1;
specifically, fig. 7 is a schematic diagram of a dividing state of an encapsulant in an embodiment of the present invention, a circuit is marked on a top surface of the encapsulant 5, the encapsulant 5 is cut along the circuit by a grinding wheel, a plurality of wire grooves are formed on the encapsulant 5 based on cutting, the width of the grinding wheel is W, and the range of values of W is: w is more than or equal to 40 mu m and less than or equal to 100 mu m, namely, a plurality of wire grooves with the width of 40 mu m to 100 mu m can be cut on the sealing colloid through grinding wheel cutting, and a proper grinding wheel is selected according to the arrangement of the intervals between the metal layers in the patterned metal layer 3 and the convenience requirement of actual processing, so that the packaging cutting requirement of the LED packaging device is met.
Further, based on the grinding wheel cutting, the packaging colloid 5 can be divided into a plurality of packaging layers, each packaging layer corresponds to one LED packaging device, namely, a plurality of LED packaging devices are formed on the temporary carrier plate 1, any one of the LED packaging devices comprises at least two pattern metal layers 3 and one LED chip 4, the packaging colloid 5 is covered on the plurality of pattern metal layers 3, so that the plastic packaging operation of a plurality of LED packaging devices can be simultaneously met, and the plurality of LED packaging devices can be conveniently divided based on the grinding wheel cutting, so that the preparation efficiency of the LED packaging devices is improved.
Specifically, in this embodiment, the operation of marking the circuit on the encapsulant 5 may be performed by a laser marking device, that is, by adjusting the power of the laser beam, and by controlling the routing of the laser on the encapsulant 5, the circuit is marked on the surface of the encapsulant 5.
Furthermore, a circuit layout image can be input into the laser marking device, the laser marking device is controlled to project the layout image on the packaging colloid 5 by the input circuit, and the marking of the circuit layout can be completed on the packaging colloid 5 by the laser marking device by adjusting the output power of the laser marking device.
Further, the grinding wheel cutting machine is controlled to position the corresponding painting lines on the packaging colloid 5, the initial position of the grinding wheel cutting is determined, the moving path of the grinding wheel is adjusted, and the packaging colloid 5 is cut along the painting lines on the packaging colloid 5.
Further, the cutting depth of the grinding wheel is adjusted, so that the bottom end of the grinding wheel can be in contact with the passivation layer 2, and a wire groove formed by cutting the grinding wheel can be exposed out of the passivation layer 2. According to the thickness of the encapsulation body 5 and the cutting speed of the grinding wheel, the cutting depth of the grinding wheel along the vertical direction is set, so that the grinding wheel can contact the passivation layer 2, and cutting marks are formed on the surface of the passivation layer 2.
Further, through the cutting trace, it can be ensured that the grinding wheel cutting can be completely divided into a plurality of packaging layers by the packaging colloid 5, and the convenience of detecting the grinding wheel cutting effect is improved.
S16: separating the temporary carrier plate 1 by a film tearing mode, so that the temporary carrier plate 1 is peeled off from the high-temperature-resistant PET double-sided adhesive tape 2;
fig. 8 is a schematic diagram of a preparation state after the temporary carrier plate is separated in the embodiment of the invention, the temporary carrier plate is separated in a film tearing manner, the film tearing force is similar to that of transparent adhesive tape, manual tearing is adopted, the temporary carrier plate 1 can be peeled off from the high-temperature-resistant PET double-sided adhesive tape 2 approximately with 3-6 kg force, namely, the temporary carrier plate 1 is peeled off from the whole packaged integral LED device, the temporary carrier plate 1 is peeled off in a relatively simple manner, no additional process treatment is needed, the process cost can be reduced, the peeled temporary carrier plate 1 can be recycled, and the temporary carrier plate 1 can be used for the preparation process of the next batch of LED packaging devices after being cleaned, namely, the temporary carrier plate 1 can be recycled and reused, and the material waste for preparing the LED packaging devices is reduced.
S17: covering a layer of blue film 6 on the top surfaces of the LED packaging devices;
specifically, fig. 9 is a schematic diagram of a preparation state after covering a blue film in the embodiment of the present invention, a blue film 6 is covered on a top surface of the encapsulation colloid 5, and a plurality of LED encapsulation devices formed by cutting and dividing are temporarily fixed, and one surface with viscosity of the blue film 6 is covered on the top surfaces of a plurality of LED encapsulation devices, so that a plurality of LED encapsulation devices can be arranged in an array, thereby improving convenience of transferring and electro-luminescence testing of a plurality of LED encapsulation devices.
It should be noted that, here, the single-sided adhesive blue film 6 is stuck on the packaging colloid 5, and the process of sticking the blue film 6 is assisted by adopting a roller, so that bubbles are avoided when the blue film 6 is stuck, and the packaging colloid and the blue film have better adhesion and adhesiveness when the turnover machine is subjected to heating and pressurizing treatment.
S18: and heating and pressurizing the packaging device with the blue film 6 by adopting a turnover machine, and removing the high-temperature-resistant PET double-sided adhesive tape 2.
Specifically, fig. 10 is a schematic diagram of a preparation state of a high temperature resistant PET double-sided tape removed in an embodiment of the present invention, in which the blue film 6 is provided to temporarily fix a plurality of segmented LED package devices, that is, the plurality of LED package devices can maintain an array arrangement relationship, so that a test is performed on the plurality of LED package devices through a probe station, a metal probe of an anode and a cathode is connected to each LED package device, and parameters such as brightness, wavelength, and electric leakage of the LED package devices are tested under a preset current and voltage, so as to evaluate the light emitting reliability of the LED package devices.
Specifically, the blue film-contained packaging device is placed on a downloading table of a turnover machine together, one surface of a blue film 6 in the blue film-contained packaging device is arranged on the upper side, one surface of a high-temperature-resistant PET double-sided adhesive tape 2 in the blue film-contained packaging device is arranged on the lower side, the temperature of the turnover machine is controlled to be between 55 ℃ and 65 ℃, for example, the temperature of the turnover machine is 60 ℃, then a carrier on the turnover machine is controlled to be pressed down, the pressure of the carrier on the upper side is controlled to be between 5 KG and 10KG, the pressing time of the carrier on the upper side is 20 seconds to 30 seconds, after the heating and pressing treatment is finished, the turnover machine is controlled to turn over so that one surface of the blue film 6 in the blue film-contained packaging device is arranged on the upper side, the whole blue film-contained packaging device is placed on a jig disc with vacuum suction, the surface of the blue film 6 is controlled to be sucked by suction, the high-temperature-resistant PET double-sided adhesive tape 2 is removed in a tearing mode in the process, and the tearing strength of the high-temperature-resistant PET double-sided adhesive tape 2 is 3 KG to 6 KG.
It should be noted that, the upper carrier table board of the turnover machine is softer (soft cloth is generally padded, so that devices are better embedded in the blue film in the film pressing process), the lower carrier table board is a hard metal surface, the pressure is controlled here to bond the packaging devices with the blue film surface and generate a certain degree of embedding in the blue film, the pressing time is 20-30 seconds here to enable the blue film to be heated sufficiently (the blue film is heated and the hardness is reduced and becomes soft), bonding between the packaging devices and the blue film is facilitated, bonding strength of the blue film and the packaging devices is guaranteed, and bonding between the blue film and the packaging devices is avoided in the process of removing the high-temperature PET double-sided tape 2.
According to the preparation method provided by the embodiment of the invention, the temporary carrier plate is matched with the high-temperature-resistant PET double-sided adhesive tape to package the LED chips, and the temporary carrier plate is peeled off based on the high-temperature-resistant PET double-sided adhesive tape after the packaging is completed, so that the temporary carrier plate can be recovered and reused, and the process of processing circuits on the temporary carrier plate can be reduced by arranging the packaging operation of the temporary carrier plate for carrying the LED chips, thereby simplifying the process of LED packaging devices, and improving the preparation efficiency of the LED packaging devices by simultaneously packaging a plurality of LED packaging devices on the temporary carrier plate. The high-precision patterned metal layer can be manufactured by combining the high-temperature-resistant PET double-sided tape through a chip process, so that the simplification and effective encapsulation of a small-size chip are realized, and the device is free of a substrate.
The LED packaging device prepared based on the preparation method reduces the substrate structure, simplifies the overall structure of the LED device, enables the LED packaging device to adapt to the installation requirement of a miniaturized device, and simultaneously is matched with the patterned metal layer, so that the LED packaging device is convenient to attach to an external circuit board, and the practicability and the reliability of the LED packaging device are improved. The wafer level package realized by the preparation method is beneficial to saving the process, improving the yield, and the LED package device is provided with a bonding pad, the Gap distance of the patterned metal layer can be designed to be larger, and the patterned metal layer can be directly welded on a circuit board for use.
The high-temperature-resistant PET double-sided adhesive tape can be used for removing the temporary carrier plate in a tearing manner, and the high-temperature-resistant PET double-sided adhesive tape is removed in a tearing manner in a packaging device with a blue film, so that the whole process is simple and convenient to operate, and meanwhile, the tearing manner can be completed without high-precision equipment, so that the manufacturing cost of the whole preparation process is reduced, and the recycling of the temporary carrier plate is realized.
Referring to fig. 11, an embodiment of the present invention provides an LED package device, including: the LED chip comprises a patterned metal layer 3, an LED chip 4 arranged on the patterned metal layer 3 and an encapsulation colloid 5 covering the LED chip 4, wherein the bottom surface of the patterned metal layer 3 is level with the bottom surface of the encapsulation colloid 5.
Further, the setting of base plate is reduced to the LED packaging device, can simplify the overall dimension of LED packaging device for the LED packaging device can be suitable for the installation preparation at miniaturized display device, improves the commonality of LED packaging device promptly, satisfies the electric connection demand of LED packaging device through setting up patterning metal layer 3, reduces complicated circuit design, and realizes the electric connection of LED packaging device and circuit board based on patterning metal layer 3, improves the electric connection stability between LED packaging device and the circuit board, patterning metal layer 3 can adjust according to the actual connection demand of circuit board, can improve the reliability of LED packaging device.
Further, by arranging the single-layer patterned metal layer 3 and matching with the simplified structure without a substrate, the heat dissipation efficiency of the LED packaging device can be improved, the heat accumulation in the LED packaging device can be reduced, the risk of serious heating of the LED packaging device can be reduced, and the effective service life of the LED packaging can be prolonged.
Specifically, the thickness of the patterned metal layer 3 is between 2 μm and 3 μm, and the interval between the metal layers in the patterned metal layer 3 can be adjusted according to the packaging size of the LED packaging device, so as to meet the packaging requirement of the LED packaging device.
Further, the material of the patterned metal layer 3 may be one or more of platinum Pt, copper Au, and chromium Cr, so that the patterned metal layer 3 can meet the requirements of soldering and fixing and electrical connection of the LED chip 4.
Specifically, the material of the encapsulation colloid 5 may be epoxy resin, silica gel, silicone resin, a cake, or a fluorescent film, the thickness of the encapsulation colloid 5 may be adjusted according to the actual encapsulation requirement of the LED package device, and the thickness of the encapsulation colloid 5 is between 50 μm and 500 μm, and the encapsulation colloid 5 may completely encapsulate the LED chip 4, so as to avoid direct contact between the LED chip 4 and the external environment, and reduce the damage risk of the LED chip 4.
Further, the epoxy resin has better heat resistance, insulativity and stability, so that the epoxy resin can meet the packaging requirement of the LED chip 4.
Furthermore, according to the actual use requirement of the LED package device, the fluorescent powder may be added into the silicone resin or the epoxy resin, and the fluorescent glue film may be formed by fully mixing, so that the packaging colloid 5 may meet the packaging requirement of the LED chip 4, and adjust the light color of the LED package device.
Further, by setting the encapsulant 5, the light emitting angle, the light emitting intensity, and the like of the LED chip 4 may be adjusted by light refraction inside the encapsulant 5.
Specifically, the bottom surface of the patterned metal layer 3 is flush with the bottom surface of the encapsulation colloid 5, and the patterned metal layer 3 may be connected to an external circuit, so as to meet the normal use of the LED package device, and the setting interval of the patterned metal layer 3 may be set according to the actual package requirement of the LED package device.
The embodiment of the invention provides an LED packaging device, which completes the packaging of an LED chip 4 by arranging a patterned metal layer 3 and matching with a packaging colloid 5, simplifies the packaging operation of the LED chip 4, improves the packaging efficiency of the LED chip 4, and can reduce the overall size of the LED packaging device so as to adapt to the installation requirements of different LED packaging devices.
While the foregoing has been described in some detail by way of illustration of the principles and embodiments of the invention, specific examples have been set forth herein to provide a thorough understanding of the method and core concepts of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (10)
1. The preparation method of the LED packaging device is characterized by comprising the following steps of:
sticking a layer of high-temperature-resistant PET double-sided adhesive tape on the top surface of the temporary carrier plate;
forming a plurality of patterned metal layers on the high-temperature-resistant PET double-sided adhesive tape;
bonding pads in a plurality of LED chips correspondingly on tin soldering points of the corresponding patterned metal layer by adopting low-temperature solder paste;
laminating the high-temperature-resistant PET double-sided tape by an adhesive pressing process to form packaging colloid for coating the LED chip;
a circuit is marked on the packaging colloid, the packaging colloid is cut along the circuit through a cutting mechanism, and a plurality of LED packaging devices are formed on the temporary carrier plate;
separating the temporary carrier plate by a film tearing mode, so that the temporary carrier plate is peeled off from the high-temperature-resistant PET double-sided adhesive tape;
covering a layer of blue film on the top surfaces of the LED packaging devices;
and heating and pressurizing the packaging device with the blue film by adopting a turnover machine, and removing the high-temperature-resistant PET double-sided adhesive tape.
2. The method for manufacturing the LED package device according to claim 1, wherein the temporary carrier is made of sapphire, silicon wafer or glass sheet; the temperature resistance of the high-temperature-resistant PET double-sided adhesive tape is over 200 ℃.
3. The method for manufacturing an LED package device of claim 1, wherein forming a plurality of patterned metal layers on the high temperature resistant PET double sided tape comprises:
forming a layer of patterning mask on the high-temperature-resistant PET double-sided tape, and forming a plurality of patterning metal layers on the high-temperature-resistant PET double-sided tape by vapor deposition based on the patterning mask.
4. The method for manufacturing the LED package device according to claim 1, wherein the bonding pads in the plurality of LED chips correspondingly bonded to the soldering points of the corresponding patterned metal layer by using the low-temperature solder paste comprises:
setting a chip mounting position on each patterned metal layer, and coating solder paste on each chip mounting position to form a soldering point;
bonding pads in a plurality of LED chips correspondingly to corresponding soldering points, and curing the solder paste through a tempering furnace, wherein the melting point of the low Wen Xigao is 150-170 ℃.
5. The method for manufacturing an LED package device according to claim 4, wherein the step of applying solder paste at each of the chip mounting positions to form solder sites is specifically:
carrying out tin paste brushing operation on the chip mounting position in a steel mesh tin brushing mode;
or dispensing solder paste on the chip mounting positions corresponding to the patterned metal layers through dispensing equipment.
6. The method for manufacturing an LED package device according to claim 1, wherein the step of laminating the high temperature resistant PET double sided tape by a lamination process to form an encapsulant covering the LED chip comprises:
covering initial colloid on the patterned metal layer, so that the initial colloid covers the surface of the patterned metal layer and the LED chip;
and continuously hot-pressing the initial colloid for a first preset time by a preset colloid pressing machine under preset pressing pressure and preset baking temperature to form the packaging colloid.
7. The method of manufacturing an LED package device of claim 1, wherein the patterning the circuit on the encapsulant, cutting the encapsulant along the circuit by a cutting mechanism and forming a plurality of LED packages on the temporary carrier plate comprises:
a circuit is marked on the top surface of the packaging colloid, the packaging colloid is cut along the circuit through a grinding wheel, and a plurality of wire grooves are formed on the packaging colloid based on cutting;
the packaging colloid is divided into a plurality of packaging layers based on the plurality of wire grooves, so that a plurality of LED packaging devices are formed on the temporary carrier plate.
8. The method of manufacturing an LED package device of claim 1, wherein the tearing strength in the temporary carrier is 3-6 kg by tearing.
9. The method for manufacturing the LED package device according to claim 1, wherein the heating and pressurizing the blue film-attached package device by using a flipping machine, and removing the high temperature-resistant PET double-sided tape comprises:
placing the packaging device with the blue film on a downloading table of a turnover machine together, wherein one surface of the blue film in the packaging device with the blue film is arranged on the upper surface, and one surface of the high-temperature-resistant PET double-sided tape in the packaging device with the blue film is arranged on the lower surface, and the temperature of the turnover machine is controlled between 55 ℃ and 65 ℃;
the upper carrier of the turnover machine is controlled to be pressed downwards, the pressure of the upper carrier is controlled to be between 5 and 10KG, and the pressing time of the upper carrier is controlled to be between 20 and 30 seconds;
the overturning machine is controlled to overturn so that one surface of the blue film in the packaging device with the blue film is arranged down, one surface of the high-temperature-resistant PET double-sided tape in the packaging device with the blue film is arranged up, the whole packaging device with the blue film is placed on a jig disc with vacuum suction, the surface of the blue film is tightly sucked by the jig disc through suction, and the high-temperature-resistant PET double-sided tape is removed in a tearing mode.
10. The method for manufacturing an LED package device of claim 9, wherein the tearing force applied to the high temperature resistant PET double sided tape is between 3 and 6 kg.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311848386.7A CN117594726A (en) | 2023-12-28 | 2023-12-28 | Preparation method of LED packaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311848386.7A CN117594726A (en) | 2023-12-28 | 2023-12-28 | Preparation method of LED packaging device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117594726A true CN117594726A (en) | 2024-02-23 |
Family
ID=89910113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311848386.7A Pending CN117594726A (en) | 2023-12-28 | 2023-12-28 | Preparation method of LED packaging device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117594726A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117812845A (en) * | 2024-02-29 | 2024-04-02 | 钰泰半导体股份有限公司 | Packaging method of passive component |
-
2023
- 2023-12-28 CN CN202311848386.7A patent/CN117594726A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117812845A (en) * | 2024-02-29 | 2024-04-02 | 钰泰半导体股份有限公司 | Packaging method of passive component |
| CN117812845B (en) * | 2024-02-29 | 2024-05-14 | 钰泰半导体股份有限公司 | Packaging method of passive component |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN117594726A (en) | Preparation method of LED packaging device | |
| CN110190014B (en) | Micro-LED transfer method | |
| JPH10242533A (en) | Light emitting display element, its connecting method to electric wiring board and its manufacture | |
| JPWO2013137356A1 (en) | Semiconductor light emitting device and manufacturing method thereof | |
| CN211604646U (en) | Micro light-emitting diode display and detection device thereof | |
| KR20210027848A (en) | Micro led display and manufacturing method thereof | |
| CN113889560A (en) | LED chip and preparation method and packaging method thereof | |
| CN110783254A (en) | Chip transfer method and semiconductor device | |
| CN111489991A (en) | Display panel and manufacturing method | |
| US20150155441A1 (en) | LED package and method for producing the same | |
| JP2012094578A (en) | Manufacturing method of semiconductor light emitting device | |
| CN114823996A (en) | LED chip transfer method and display panel | |
| CN114023777B (en) | Circuit board assembly, light-emitting assembly and manufacturing method thereof | |
| JP2002353347A (en) | Semiconductor device and method of manufacturing same | |
| CN114927456A (en) | Transfer method of micro light-emitting diode chip | |
| CN113889462A (en) | LED chip and preparation method and packaging method thereof | |
| JP6630373B2 (en) | Process method of bonding and packaging LEDs with an amorphous silicon resin light converter | |
| CN117276454A (en) | Method for bonding miniature luminous chip and chip bonding piece | |
| JP5485112B2 (en) | Manufacturing method of optical semiconductor device | |
| KR20050091785A (en) | Method for producing microsystems | |
| CN114220828B (en) | Mass transfer method of Micro-LED chip and transfer carrier used for method | |
| CN106848036B (en) | A kind of LED encapsulation structure and its packaging method | |
| CN114613887A (en) | Transfer method, display panel and display device | |
| CN114122221A (en) | LED display module and manufacturing method thereof | |
| CN117637929A (en) | Preparation method of LED packaging device and LED packaging device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |