CN114613887A - Transfer method, display panel and display device - Google Patents
Transfer method, display panel and display device Download PDFInfo
- Publication number
- CN114613887A CN114613887A CN202210219439.8A CN202210219439A CN114613887A CN 114613887 A CN114613887 A CN 114613887A CN 202210219439 A CN202210219439 A CN 202210219439A CN 114613887 A CN114613887 A CN 114613887A
- Authority
- CN
- China
- Prior art keywords
- back plate
- emitting diode
- growth substrate
- adhesive layer
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 239000012790 adhesive layer Substances 0.000 claims abstract description 54
- 229910000679 solder Inorganic materials 0.000 claims abstract description 32
- 239000004840 adhesive resin Substances 0.000 claims abstract description 22
- 229920006223 adhesive resin Polymers 0.000 claims abstract description 22
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 238000003825 pressing Methods 0.000 claims abstract description 10
- 230000002159 abnormal effect Effects 0.000 claims description 23
- 230000005496 eutectics Effects 0.000 claims description 17
- 239000010410 layer Substances 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims description 9
- GPYPVKIFOKLUGD-UHFFFAOYSA-N gold indium Chemical compound [In].[Au] GPYPVKIFOKLUGD-UHFFFAOYSA-N 0.000 claims description 4
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 7
- 238000007731 hot pressing Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- 238000007689 inspection Methods 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010017 direct printing Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a transfer method, a display panel and a display device, comprising the following steps: providing a first growth substrate comprising a plurality of first light emitting diode chips; providing a driving back plate which comprises a plurality of back plate electrodes, wherein the plurality of back plate electrodes correspond to the first chip electrodes on the plurality of first light emitting diode chips one by one; coating solder on the plurality of back plate electrodes; coating non-conductive adhesive resin on the solder, pre-curing the non-conductive adhesive resin to form a first pre-cured adhesive layer, and covering the whole surface of the first pre-cured adhesive layer on the surface of the driving back plate; attaching a first growth substrate and a driving back plate, wherein the first precured adhesive layer is used for temporarily bearing a plurality of first light emitting diode chips; thermally pressing the first growth substrate and the driving back plate, heating and softening the first precured adhesive layer, exposing the solder, and bonding the first chip electrode with the corresponding back plate electrode through the solder; and laser stripping the first LED chips, and transferring the first LED chips to the driving back plate.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a transfer method, a display panel and a display device.
Background
Micro-LEDs are a new generation of display technology. Compared with the existing liquid crystal display, the flexible display panel has higher photoelectric efficiency, higher brightness, higher contrast ratio and lower power consumption, and can be combined with a flexible panel to realize flexible display.
Current Micro-LED based display panels are typically implemented using mass transfer technology. Taking a front-mounted LED as an example, the process of transferring a huge amount of Micro-LEDs roughly comprises the following steps: temporarily transferring the Micro-LED to a first adhesive layer from a growth substrate of the Micro-LED by using a temporary substrate comprising the first adhesive layer; transferring the Micro-LED on the first adhesive layer to a second adhesive layer by using a transfer substrate comprising the second adhesive layer; and bonding the Micro-LEDs on the transfer substrate with the back plate electrodes on the driving back plate, removing the transfer substrate, and finishing the mass transfer of the Micro-LEDs.
In the transfer process, the viscosity of the first adhesive layer needs to be smaller than that of the second adhesive layer, and the technical difficulty in regulating the viscosity of the first adhesive layer and the second adhesive layer exists.
Disclosure of Invention
The invention aims to provide a transfer method, a display panel and a display device.
In order to solve the above problems, the present invention provides a transferring method for transferring a light emitting diode, the transferring method comprising:
providing a first growth substrate, wherein the first growth substrate comprises a plurality of first light-emitting diode chips;
providing a driving back plate, wherein the driving back plate comprises a plurality of back plate electrodes, and the plurality of back plate electrodes correspond to the first chip electrodes on the plurality of first light emitting diode chips one to one;
coating solder on the plurality of back plate electrodes;
coating non-conductive adhesive resin above the solder, and pre-curing the non-conductive adhesive resin to form a first pre-cured adhesive layer, wherein the whole surface of the first pre-cured adhesive layer covers the surface of the driving back plate;
the first growth substrate and the driving back plate are attached, and the first pre-cured adhesive layer is used for temporarily bearing the plurality of first light emitting diode chips;
thermally pressing the first growth substrate and the driving back plate, wherein the first precured adhesive layer is heated and softened, the solder is exposed, and the first chip electrode is bonded with the corresponding back plate electrode through the solder; and
and laser stripping the first growth substrate and the plurality of first light-emitting diode chips, and transferring the plurality of first light-emitting diode chips to the driving backboard.
As an optional technical solution, the method further comprises: providing test equipment, detecting the plurality of first light-emitting diode chips, identifying abnormal light-emitting diode chips, and acquiring position information of the abnormal light-emitting diode chips; according to the position information, irradiating laser to the position corresponding to the first growth substrate to strip the abnormal light emitting diode chip; wherein the first growth substrate forms a first vacancy at a position corresponding to the abnormal light emitting diode chip peeling.
As an optional technical solution, the method further comprises: the position of the driving back plate corresponding to the first vacancy forms a second vacancy; coating non-conductive adhesive resin above the driving back plate, and pre-curing the non-conductive adhesive resin to form a second pre-cured adhesive layer, wherein the whole surface of the second pre-cured adhesive layer covers the surface of the driving back plate, and one side of the first LED chips far away from the driving back plate is exposed out of the second pre-cured adhesive layer; providing a second growth substrate, wherein the second growth substrate comprises a second light-emitting diode chip corresponding to the second vacancy; the second growth substrate and the driving back plate are attached, and the second precured adhesive layer is used for temporarily serving as the second light-emitting diode chip; thermally pressing the second growth substrate and the driving back plate, wherein the second pre-cured layer is heated and softened, the solder is exposed from the second vacancy, and a second chip electrode of the second light emitting diode is bonded with the back plate electrode through the solder; and laser stripping the second growth substrate and the second light emitting diode chip, wherein the second light emitting diode chip is transferred to the second vacancy on the driving backboard.
As an optional technical solution, the first growth substrate and the second growth substrate are sapphire growth substrates, respectively.
As an optional technical solution, the bonding between the first chip electrode, the second chip electrode and the back plate electrode is eutectic bonding.
As an optional technical solution, the eutectic bonding includes gold-indium eutectic bonding and tin-gold eutectic bonding.
As an optional technical solution, the non-conductive adhesive resin is an epoxy resin.
As an optional technical solution, the method further comprises: providing a photomask, wherein the photomask comprises a plurality of through holes, and the through holes correspond to the first light-emitting diode chips to be transferred on the first growth substrate; irradiating laser, wherein the laser penetrates through the through holes to irradiate the first growth substrate, and the first LED chips to be transferred and the first growth substrate are peeled off; the first LED chips left after the abnormal LED chips are peeled off from the first growth substrate are the plurality of first LED chips to be transferred.
The invention also provides a display panel, which comprises a driving backboard and a plurality of light emitting diode chips transferred onto the driving backboard by adopting the transfer method.
The invention further provides a display device comprising the display panel.
Compared with the prior art, the invention provides a transfer method, a display panel and display equipment, and the transfer method is a direct transfer technology for preparing a high-quality Micro-LED display device. In addition, before the light emitting diode chips on the first growth substrate are transferred, optical characteristics and appearances of the light emitting diode chips are detected in advance by using Micro PL/AOI to generate corresponding position information, then abnormal light emitting diode chips are directly removed by laser stripping, the remained light emitting diode chips are good in appearance and close in optical performance consistency, and high-quality display panels and display devices can be prepared by directly carrying out mass transfer on the basis of the chips.
The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of a transfer method provided in an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view illustrating a first led chip transfer process according to an embodiment of the invention.
Fig. 3 is a schematic cross-sectional view illustrating a second led chip transfer process according to an embodiment of the invention.
Fig. 4 is a schematic cross-sectional view of a display panel according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to embodiments and accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
The invention aims to provide a transfer method, a display panel and a display device, wherein the transfer method is used for directly transferring a light emitting diode on a growth substrate onto a driving backboard to complete mass transfer, and the display panel and the display device with high display quality are prepared.
As shown in fig. 1, the transferring method 100 provided by the present invention is suitable for transferring a light emitting diode, and comprises:
a transfer method for transferring a light emitting diode, the transfer method comprising:
providing a first growth substrate, wherein the first growth substrate comprises a plurality of first light-emitting diode chips;
providing a driving back plate, wherein the driving back plate comprises a plurality of back plate electrodes, and the plurality of back plate electrodes correspond to the first chip electrodes on the plurality of first light emitting diode chips one to one;
coating solder on the plurality of back plate electrodes;
coating non-conductive adhesive resin above the solder, pre-curing the non-conductive adhesive resin to form a first pre-cured adhesive layer, wherein the whole surface of the first pre-cured adhesive layer covers the surface of the driving back plate;
the first growth substrate and the driving back plate are attached, and the first pre-cured adhesive layer is used for temporarily bearing the plurality of first light emitting diode chips;
thermally pressing the first growth substrate and the driving back plate, wherein the first precured adhesive layer is heated and softened, the solder is exposed, and the first chip electrode is bonded with the corresponding back plate electrode through the solder; and
and laser stripping the first growth substrate and the plurality of first light-emitting diode chips, and transferring the plurality of first light-emitting diode chips to the driving backboard.
In some embodiments, further comprising: providing test equipment, detecting the plurality of first light-emitting diode chips, identifying abnormal light-emitting diode chips, and acquiring position information of the abnormal light-emitting diode chips; according to the position information, irradiating laser to the position corresponding to the first growth substrate to strip the abnormal light emitting diode chip; wherein the first growth substrate forms a first vacancy at a position corresponding to the abnormal light emitting diode chip peeling.
In some embodiments, further comprising: the position of the driving back plate corresponding to the first vacancy forms a second vacancy; coating non-conductive adhesive resin above the driving back plate, and pre-curing the non-conductive adhesive resin to form a second pre-cured adhesive layer, wherein the whole surface of the second pre-cured adhesive layer covers the surface of the driving back plate, and one side of the first LED chips far away from the driving back plate is exposed out of the second pre-cured adhesive layer; providing a second growth substrate, wherein the second growth substrate comprises a second light-emitting diode chip corresponding to the second vacancy; attaching the second growth substrate and the driving back plate, wherein the second precured adhesive layer is used for temporarily serving the second light emitting diode chip; thermally pressing the second growth substrate and the driving back plate, wherein the second pre-cured layer is heated and softened, the solder is exposed from the second vacancy, and a second chip electrode of the second light emitting diode is bonded with the back plate electrode through the solder; and laser stripping the second growth substrate and the second light emitting diode chip, wherein the second light emitting diode chip is transferred to the second vacancy on the driving backboard.
In some embodiments, further comprising: providing a photomask, wherein the photomask comprises a plurality of through holes, and the through holes correspond to the first light-emitting diode chips to be transferred on the first growth substrate; irradiating laser, wherein the laser penetrates through the through holes to irradiate the first growth substrate, and the first LED chips to be transferred and the first growth substrate are peeled off; the first LED chips left after the abnormal LED chips are peeled off from the first growth substrate are the plurality of first LED chips to be transferred.
The transfer flow of the above-described transfer method 100 is described in detail below with reference to fig. 2 and 3.
As shown in fig. 2, a first growth substrate 10 is provided, on which a plurality of first led chips 20 are included, each of the first led chips 20 including a first chip electrode 21, the first chip electrode 21 being located at a side away from the first growth substrate 10.
Providing a detection device 30 for identifying an abnormal light emitting diode chip 22 among the plurality of first light emitting diode chips 20, and recording position information thereof when the abnormal light emitting diode chip 22 is identified and determined; providing a laser device, and irradiating laser to the back side of the first growth substrate 10 according to the position information, peeling off the abnormal light emitting diode chip 22, and forming a first vacancy 23 at the corresponding position of the first growth substrate 10.
The detection device 30 may include a variety of detection functions, including but not limited to optical performance detection, appearance detection, and the like. In addition, the inspection apparatus 30 may also be a plurality of inspection apparatuses including a plurality of inspection functions, such as an Automatic Optical Inspection (AOI) apparatus, a photoluminescence test system (PL), or the like.
A driving backplate 40 is provided which comprises a plurality of backplate electrodes 41, the backplate electrodes 41 corresponding to the first chip electrodes 21.
The non-conductive adhesive resin is coated on the solder 50, and after pre-curing, the non-conductive adhesive resin forms a first pre-cured adhesive layer 60, wherein the first pre-cured adhesive layer 60 entirely covers the surface of the driving back plate 40.
The first growth substrate 10 and the driving back plate 40 are attached, and the first pre-cured adhesive layer 60 provides a flat first adhesive surface 61, and the first adhesive surface 61 is used for temporarily adhering and fixing the plurality of first micro light emitting diode chips 20.
Providing a hot-pressing device, hot-pressing the first growth substrate 10 and the driving back plate 40, wherein the first pre-cured adhesive layer 60 is softened by heat and has increased fluidity, a pressure head of the hot-pressing device applies pressure on the first growth substrate 10 and/or the driving back plate 40, the solder 50 is exposed from the first pre-cured adhesive layer 60 and is contacted with the first chip electrode 21 under the mutual pressing state, and the first chip electrode 21, the solder 50 and the back plate electrode 41 are bonded with each other at the bonding temperature.
The bonding is, for example, eutectic bonding, including but not limited to gold-indium eutectic bonding, tin-gold eutectic bonding, and the like. In addition, the bonding temperature is self-selected according to bonding requirements.
After the bonding, the laser beam is irradiated to the back surface of the first growth substrate 10, and the plurality of first led chips 20 are peeled off and transferred to the driving back plate 40 side. The driving back plate 40 forms a second void 42 at a position corresponding to the first void 23, and the corresponding back plate electrode 41 and the solder 50 are exposed in the second void 42.
In addition, the first pre-cured adhesive layer 60 is gradually cured due to temperature reduction at the cooling stage of eutectic bonding to form a first encapsulation layer S1, and the first encapsulation layer S1 is used for encapsulating the first chip electrode 21 and the backplane electrode 41.
In the above transfer process, the first precured adhesive layer 60 serving as a carrier layer is formed on the driving back plate 40, so that the first led chip 20 is directly transferred onto the driving back plate 40 from the first growth substrate 10 side in a huge amount. Since the first led chips 20 on the first growth substrate 10 are screened for optical performance and appearance in advance, and the abnormal led chips are removed, the abnormal led chips are prevented from being transferred to the driving backplane 40, and thus the display quality of the display panel manufactured based on the transfer method is beneficial.
Further, the step of irradiating the laser light to the back surface of the first growth substrate 10 further includes: providing a first photomask 70 comprising a plurality of first through holes 71, wherein the plurality of first through holes 71 correspond to the plurality of first to-be-transferred led chips 20 on the first growth substrate 10, wherein the laser irradiates onto the first growth substrate 10 at positions corresponding to the first to-be-transferred led chips 20 through the plurality of first through holes 71, and the plurality of first to-be-transferred led chips 20 and the first growth substrate 10 are peeled off.
The first led chip 20 to be transferred refers to the remaining first led chip 20 after the abnormal led chip 22 is peeled off from the first growth substrate 10.
As shown in fig. 3, the method further includes: a second growth substrate 80 is provided, which comprises a second light emitting diode chip 90, the second light emitting diode chip 90 corresponding to the second void 42.
The driving back plate 40 including the plurality of first led chips 20 is coated with a non-conductive adhesive resin, and after pre-curing, the non-conductive adhesive resin forms a second pre-cured adhesive layer 60 ', wherein the entire surface of the second pre-cured adhesive layer 60' covers the surface of the driving back plate 40. Preferably, the plurality of first led chips 20 are exposed from the second pre-cured adhesive layer 60 ', or preferably, the second adhesive surface 61 ' of the second pre-cured adhesive layer 60 ' is flush with the surface of the first led chips 20 facing the driving back plate 40.
The second growth substrate 80 and the driving backplane 40 are attached, and the second pre-cured adhesive layer 60 ' provides a flat second adhesive surface 61 ', and the second adhesive surface 61 ' is used for temporarily adhering and fixing the second micro-led chip 90.
Providing a hot-pressing device, hot-pressing the second growth substrate 80 and the driving back plate 40, softening the second pre-cured adhesive layer 60 'by heating, increasing the fluidity, applying pressure to the second growth substrate 80 and/or the driving back plate 40 by a pressure head of the hot-pressing device, exposing the solder 50 in the second gap 42 from the second pre-cured adhesive layer 60' to contact with the second chip electrode 91 of the second light-emitting diode chip 90 in a mutual pressing state, and bonding the second chip electrode 91, the solder 50 and the back plate electrode 41 at a bonding temperature.
The bonding is, for example, eutectic bonding, including but not limited to gold-indium eutectic bonding, tin-gold eutectic bonding, and the like. In addition, the bonding temperature is self-selected according to bonding requirements.
After the bonding, the laser is irradiated to the back surface of the second growth substrate 80, and the second led chip 90 is peeled off and transferred to the driving backplane 40 side and located in the corresponding second void 42.
In addition, the second pre-cured adhesive layer 60' is fused with the first encapsulant layer S1 at the temperature increasing stage of eutectic bonding, and is gradually cured due to temperature reduction at the temperature decreasing stage of eutectic bonding to form a second encapsulant layer S2, and the second encapsulant layer S2 is used to encapsulate the first chip electrode 21, the second chip electrode 91, and the back plate electrode 41.
Wherein, the second pre-cured adhesive layer 60' and the first encapsulating layer S1 use the same or similar non-conductive adhesive resin and form a one-piece encapsulating layer after fusion, without the problem of interface separation. The non-conductive adhesive resin is, for example, epoxy resin.
With reference to fig. 3, the step of irradiating the laser to the back surface of the second growth substrate 80 further includes: providing a second mask 70 ' comprising a second through hole 71 ', the second through hole 71 ' corresponding to the second led chip 80 on the second growth substrate 80, wherein the laser irradiates the second growth substrate 80 through the second through hole 71 at a position corresponding to the second led chip 80, and the second led chip 80 and the second growth substrate 40 are peeled off.
The first growth substrate 10 and the second growth substrate 80 are, for example, sapphire growth substrates, respectively.
The first led chip 20 and the second led chip 90 are, for example, Micro/mini led chips.
As shown in fig. 4, the present invention further provides a display panel, which includes a driving backplane 40 and a plurality of first led chips 20 and second led chips 90 disposed on the driving backplane 40, wherein the plurality of first led chips 20 and second led chips 90 are transferred onto the driving backplane 40 by using the transfer method 100 in fig. 1.
The display panel further includes a light absorbing layer 200 disposed on the driving backplane 40, the light absorbing layer 200 including a plurality of openings, the plurality of first led chips 20 and the plurality of second led chips 90 being located in the corresponding plurality of openings.
The invention also provides a display device comprising the display panel.
In summary, the present invention provides a transfer method, a display panel and a display device, in which the transfer method is a direct transfer technique for preparing a high-quality Micro-LED display device, and a precured adhesive layer is disposed on one side of a driving backplane to serve as an auxiliary carrying layer for temporarily receiving LED chips of a first growth substrate, so that the LED chips on the first growth substrate can be directly transferred to the driving backplane in a huge amount. In addition, before the light emitting diode chips on the first growth substrate are transferred, optical characteristics and appearances of the light emitting diode chips are detected in advance by using Micro PL/AOI to generate corresponding position information, then abnormal light emitting diode chips are directly removed by laser stripping, the remained light emitting diode chips are good in appearance and close in optical performance consistency, and high-quality display panels and display devices can be prepared by directly carrying out mass transfer on the basis of the chips.
The present invention has been described in relation to the above embodiments, which are only exemplary of the implementation of the present invention. Furthermore, the technical features mentioned in the different embodiments of the present invention described above may be combined with each other as long as they do not conflict with each other. It is to be noted that the present invention may be embodied in other specific forms, and that various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A transfer method for transferring a light emitting diode, the transfer method comprising:
providing a first growth substrate, wherein the first growth substrate comprises a plurality of first light-emitting diode chips;
providing a driving back plate, wherein the driving back plate comprises a plurality of back plate electrodes, and the plurality of back plate electrodes correspond to the first chip electrodes on the plurality of first light emitting diode chips one to one;
coating solder on the plurality of back plate electrodes;
coating non-conductive adhesive resin above the solder, pre-curing the non-conductive adhesive resin to form a first pre-cured adhesive layer, wherein the whole surface of the first pre-cured adhesive layer covers the surface of the driving back plate;
the first growth substrate and the driving back plate are attached, and the first pre-cured adhesive layer is used for temporarily bearing the plurality of first light emitting diode chips;
thermally pressing the first growth substrate and the driving back plate, wherein the first precured adhesive layer is heated and softened, the solder is exposed, and the first chip electrode is bonded with the corresponding back plate electrode through the solder; and
and laser stripping the first growth substrate and the plurality of first light-emitting diode chips, and transferring the plurality of first light-emitting diode chips to the driving backboard.
2. The transfer method according to claim 1, further comprising:
providing test equipment, detecting the plurality of first light-emitting diode chips, identifying abnormal light-emitting diode chips, and acquiring position information of the abnormal light-emitting diode chips; and
according to the position information, irradiating laser to the position corresponding to the first growth substrate to strip the abnormal light emitting diode chip;
wherein the first growth substrate forms a first vacancy at a position corresponding to the abnormal light emitting diode chip peeling.
3. The transfer method according to claim 2, further comprising:
the position of the driving back plate corresponding to the first vacancy forms a second vacancy;
coating non-conductive adhesive resin above the driving back plate, and pre-curing the non-conductive adhesive resin to form a second pre-cured adhesive layer, wherein the whole surface of the second pre-cured adhesive layer covers the surface of the driving back plate, and one side of the first LED chips far away from the driving back plate is exposed out of the second pre-cured adhesive layer;
providing a second growth substrate, wherein the second growth substrate comprises a second light-emitting diode chip corresponding to the second vacancy;
attaching the second growth substrate and the driving back plate, wherein the second precured adhesive layer is used for temporarily serving the second light emitting diode chip;
thermally pressing the second growth substrate and the driving back plate, wherein the second pre-cured layer is heated and softened, the solder is exposed from the second vacancy, and a second chip electrode of the second light emitting diode is bonded with the back plate electrode through the solder; and
and laser stripping the second growth substrate and the second light-emitting diode chip, and transferring the second light-emitting diode chip to the second vacancy on the driving backboard.
4. The transfer method according to claim 3, wherein the first growth substrate and the second growth substrate are sapphire growth substrates, respectively.
5. The transfer method of claim 3, wherein the bonds between the first chip electrode, the second chip electrode, and the backplane electrode are all eutectic bonds.
6. The transfer method of claim 5, wherein the eutectic bonding comprises gold-indium eutectic bonding, tin-gold eutectic bonding.
7. The transfer method according to claim 3, wherein the nonconductive adhesive resin is an epoxy resin.
8. The transfer method according to claim 2, further comprising:
providing a photomask, wherein the photomask comprises a plurality of first through holes, and the first through holes correspond to the first light-emitting diode chips to be transferred on the first growth substrate;
irradiating laser, wherein the laser penetrates through the first through holes to irradiate the first growth substrate, and the first light-emitting diode chips to be transferred and the first growth substrate are peeled off;
the first LED chips left after the abnormal LED chips are peeled off from the first growth substrate are the plurality of first LED chips to be transferred.
9. A display panel comprising a driving backplane and a plurality of light emitting diode chips transferred onto the driving backplane using the transfer method of any one of claims 1 to 8.
10. A display device characterized by comprising the display panel according to claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210219439.8A CN114613887A (en) | 2022-03-08 | 2022-03-08 | Transfer method, display panel and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210219439.8A CN114613887A (en) | 2022-03-08 | 2022-03-08 | Transfer method, display panel and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114613887A true CN114613887A (en) | 2022-06-10 |
Family
ID=81860490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210219439.8A Pending CN114613887A (en) | 2022-03-08 | 2022-03-08 | Transfer method, display panel and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114613887A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115207173A (en) * | 2022-06-29 | 2022-10-18 | 上海天马微电子有限公司 | Transfer method of light emitting chip |
-
2022
- 2022-03-08 CN CN202210219439.8A patent/CN114613887A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115207173A (en) * | 2022-06-29 | 2022-10-18 | 上海天马微电子有限公司 | Transfer method of light emitting chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10886257B2 (en) | Micro LED display device and method for manufacturing same | |
| CN110546771B (en) | Micro light emitting diode transfer method, micro light emitting diode device and electronic equipment | |
| KR100296202B1 (en) | Light emitting display device | |
| CN110752167B (en) | Chip transfer method and chip transfer system | |
| CN110190014B (en) | Micro-LED transfer method | |
| JP2012039013A (en) | Manufacturing method of light-emitting devices | |
| CN112582520B (en) | Micro light emitting diode transfer method and display panel | |
| US20210343572A1 (en) | Method for Transferring Massive Light Emitting Diodes and Display Back Plate Assembly | |
| CN114613887A (en) | Transfer method, display panel and display device | |
| CN110112279B (en) | Processing method of thermoelectric separation substrate for LED | |
| CN105172400B (en) | The method for printing screen of different thicknesses of layers | |
| CN117594726A (en) | Preparation method of LED packaging device | |
| CN113809114A (en) | Manufacturing method of LED display module and LED display module | |
| CN113380681B (en) | Mass transfer method | |
| WO2020262034A1 (en) | Electronic component mounting structure, method for mounting same, and method for mounting led chip | |
| CN116613267A (en) | Fan-out packaging structure of miniature LED light-emitting device and preparation method | |
| CN111739902B (en) | Transfer device and transfer method for miniature light-emitting unit | |
| CN115513244A (en) | Temporary substrate, transfer method of light emitting diode chip and display assembly | |
| JP2012099664A (en) | Adhesive for optical semiconductor device, adhesive sheet for optical semiconductor device, method of manufacturing adhesive sheet for optical semiconductor device, and method of manufacturing optical semiconductor device | |
| CN111863737B (en) | Embedded device packaging substrate and manufacturing method thereof | |
| CN114121764A (en) | LED chip transfer method, device manufacturing method, device, module and display | |
| US20230163232A1 (en) | Chip transfer method and display device | |
| CN112967961B (en) | Transfer method and device | |
| CN115588679A (en) | Transfer method of light emitting diode chip, temporary substrate and display assembly | |
| CN115719755A (en) | Circuit board assembly, manufacturing method thereof and chip transfer method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |