CN114927456A - Transfer method of micro light-emitting diode chip - Google Patents
Transfer method of micro light-emitting diode chip Download PDFInfo
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- CN114927456A CN114927456A CN202210424167.5A CN202210424167A CN114927456A CN 114927456 A CN114927456 A CN 114927456A CN 202210424167 A CN202210424167 A CN 202210424167A CN 114927456 A CN114927456 A CN 114927456A
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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Abstract
The application discloses a transfer method of a micro light-emitting diode chip, which comprises the following steps: bonding a micro light-emitting diode chip on a light-transmitting transition substrate by adopting a photosensitive adhesive layer, wherein the micro light-emitting diode chip comprises a first connecting electrode, the first connecting electrode of the micro light-emitting diode chip is positioned on one side of the micro light-emitting diode chip far away from the photosensitive adhesive layer, and the photosensitive adhesive layer comprises soldering flux; providing a driving substrate comprising a plurality of second connecting electrodes; moving the transition substrate to the upper part of the driving substrate, and aligning a first connecting electrode and a second connecting electrode of the micro light-emitting diode chip, wherein welding materials are formed on the first connecting electrode or/and the second connecting electrode; irradiating the photosensitive adhesive layer by adopting first laser so as to enable the micro light-emitting diode chip to fall off from the photosensitive adhesive layer and enable the soldering flux to volatilize; and irradiating by using a second laser to melt the welding material, wherein the melted welding material is connected with the first connecting electrode and the second connecting electrode under the action of the volatilized soldering flux.
Description
Technical Field
The application relates to the technical field of display, in particular to a transfer method of a micro light-emitting diode chip.
Background
Micro light emitting diodes (Micro LEDs) have the advantages of high brightness, high light emitting efficiency, and low power consumption, and thus have become a research hotspot in the field of display technologies at present.
However, the micro light emitting diode light emitting substrate has a problem of low transfer yield in the manufacturing process, and how to improve the transfer yield of the micro light emitting diode is a technical problem to be solved.
Disclosure of Invention
The present application is directed to a method for transferring a micro led chip, so as to improve the transfer yield of the micro led chip.
In order to realize the purpose, the technical scheme is as follows:
a method for transferring a micro light-emitting diode chip comprises the following steps:
bonding a micro light-emitting diode chip on a light-transmitting transition substrate by adopting a photosensitive adhesive layer, wherein the micro light-emitting diode chip comprises a first connecting electrode, the first connecting electrode of the micro light-emitting diode chip is positioned on one side of the micro light-emitting diode chip far away from the photosensitive adhesive layer, and the photosensitive adhesive layer comprises soldering flux;
providing a driving substrate, wherein the driving substrate comprises a plurality of second connecting electrodes;
moving the transition substrate to the position above the driving substrate, and aligning the first connecting electrode and the second connecting electrode of the micro light-emitting diode chip, wherein a welding material is formed on the first connecting electrode or/and the second connecting electrode;
irradiating the photosensitive adhesive layer on the transition substrate by adopting first laser so as to enable the micro light-emitting diode chip to fall off from the photosensitive adhesive layer and enable the soldering flux to volatilize;
and irradiating by adopting second laser so as to melt the welding material, wherein the melted welding material is used for connecting the first connecting electrode and the second connecting electrode under the action of the volatilized scaling powder.
In the method for transferring a micro light emitting diode chip, the wavelength of the first laser light is the same as the wavelength of the second laser light.
In the method for transferring a micro light emitting diode chip, the wavelength of the first laser is greater than or equal to 340 nm and less than or equal to 360 nm.
In the method for transferring a micro light emitting diode chip, a wavelength of the first laser light is different from a wavelength of the second laser light.
In the method for transferring a micro light emitting diode chip, a solder material is formed on the first connection electrode.
In the method for transferring a micro light emitting diode chip, the solder material is at least one selected from Au, Al, Cu, Sn, In, and Ti.
In the transfer method of the micro light emitting diode chip, the welding material is In or an In alloy.
In the method for transferring the micro light emitting diode chip, the viscosity of the photosensitive adhesive layer after the first laser irradiation is smaller than the viscosity of the photosensitive adhesive layer before the first laser irradiation.
In the transfer method of the micro light-emitting diode chip, the preparation material of the photosensitive adhesive layer comprises one of polyimide adhesive, acrylate adhesive and silica gel.
In the method for transferring a micro light emitting diode chip, the transition substrate is selected from one of a quartz glass substrate, a sapphire substrate and a silicon substrate.
Has the advantages that: the application provides a transfer method of a miniature light-emitting diode chip, through adopting the photosensitive adhesive layer on the first laser irradiation transition base plate, so that the miniature light-emitting diode chip drops from the photosensitive adhesive layer, and make the scaling powder volatilize, adopt second laser irradiation again, so that welding material melts, the first connecting electrode and the second connecting electrode are connected to the effect of the volatile scaling powder of molten welding material, so that the first connecting electrode of miniature light-emitting diode chip can be fixed in the second connecting electrode of drive base plate through welding material better, improve the anti-drawing ability between first connecting electrode and the second connecting electrode, and then improve the transfer yield of miniature light-emitting diode chip. Moreover, the first laser irradiation and the second laser irradiation can be realized on the same machine table, so that the moving process of the micro light-emitting diode chip is reduced while the transfer process of the micro light-emitting diode chip is simplified, the micro light-emitting diode chip is prevented from moving in the moving process, and the transfer processing precision of the micro light-emitting diode chip is improved.
Drawings
Fig. 1 is a schematic flowchart illustrating a transfer method of a micro light emitting diode chip according to an embodiment of the present application;
fig. 2A-2G are schematic process diagrams illustrating a method for transferring a micro led chip according to an embodiment of the present disclosure;
fig. 3 is a schematic flow chart illustrating a method for transferring a micro light emitting diode chip according to another embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Please refer to fig. 1, which is a flowchart illustrating a transfer method of a micro led chip according to an embodiment of the present disclosure. The transfer method of the micro light-emitting diode chip comprises the following steps:
s101: the light-sensitive adhesive layer is adopted to bond the micro light-emitting diode chip on the light-permeable transition substrate, the micro light-emitting diode chip comprises a first connecting electrode, welding materials are formed on the first connecting electrode, the first connecting electrode of the micro light-emitting diode chip is located on one side, away from the light-sensitive adhesive layer, of the micro light-emitting diode chip, and the light-sensitive adhesive layer comprises soldering flux.
As shown in fig. 2A, the micro light emitting diode chip 13 includes a chip body 131, a first connection electrode 132, and a soldering material 133, the first connection electrode 132 is connected to the chip body 131, and the soldering material 133 is formed on the first connection electrode 132. The chip body 131 includes a red micro led, a blue micro led, and a green micro led. It is understood that the chip body 131 may include only one of the red micro light emitting diodes, the blue micro light emitting diodes, and the green micro light emitting diodes.
Specifically, after the chip body 131 and the first connection electrode 132 are prepared on the substrate by using a semiconductor process, the soldering material 133 is formed on the first connection electrode 132 by evaporation or plating, the micro light emitting diode chip 13 is peeled off from the substrate, the photosensitive adhesive layer 11 is formed on the light-transmitting transition substrate 10 by coating or bonding, and the light-emitting surface of the peeled micro light emitting diode chip 13 is bonded to the photosensitive adhesive layer 11, so that the micro light emitting diode chip 13 is bonded on the transition substrate 10, and the first connection electrode 132 is located on a side of the micro light emitting diode chip 13 away from the photosensitive adhesive layer 11, as shown in fig. 2A.
The substrate may be any one of a sapphire substrate, a silicon substrate, or a gallium nitride substrate.
The transition substrate 10 and the substrate are not the same substrate, and the transition substrate 10 is selected from one of a quartz glass substrate, a sapphire substrate, or a silicon substrate, so that the transition substrate 10 has light transmittance.
The photosensitive layer 11 has light transmittance. The photosensitive layer 11 is degraded in viscosity by the irradiation of the first laser light L1, which will be described later, but is not decomposed. The preparation material of the photosensitive adhesive layer 11 includes one of polyimide type adhesive, acrylate type adhesive and silica gel.
The photosensitive adhesive layer 11 comprises the soldering flux 12, and the soldering flux 12 can assist and promote the soldering process in the soldering process and has the functions of protection and oxidation reaction prevention. The flux 12 includes an activator such as rosin.
The solder material 133 is selected from at least one of Au, Al, Cu, Sn, In, and Ti. Specifically, the solder material 133 is In or an In alloy, so that the power density required for melting the solder material 133 by the second laser L2, which will be described later, is low, and the adverse effect of the second laser L2 on the micro light emitting diode chip 13 is reduced.
S102: and providing a driving substrate, wherein the driving substrate comprises a plurality of second connecting electrodes.
The driving substrate 20 includes a carrier 201, a thin film transistor array layer 202 and a plurality of second connection electrodes 203, the thin film transistor array layer 202 is disposed on the carrier 201, and the plurality of second connection electrodes 203 are disposed on the thin film transistor array layer 202, as shown in fig. 2B.
The thin film transistor array layer 202 includes a plurality of thin film transistors arranged in an array, and the plurality of second connection electrodes 203 are electrically connected to the thin film transistors.
The carrier plate 201 may be a flexible substrate, such as a polyimide substrate. It is understood that the carrier plate 201 may also be a glass substrate.
The second connection electrode 203 is made of a material including at least one of copper, aluminum, titanium, molybdenum, and silver.
S103: and moving the transition substrate to the position above the driving substrate, and aligning the first connecting electrode and the second connecting electrode of the micro light-emitting diode chip.
Specifically, in a closed chamber, the driving substrate 20 is placed on a stage, the transition substrate 10 is turned upside down, the transition substrate 10 is moved to a position right above the driving substrate 20, the first connection electrodes 132 of the micro light emitting diode chips 13 and the second connection electrodes 203 on the driving substrate 20 are arranged in a one-to-one correspondence by using an optical detection device, and the soldering material 133 on the first connection electrodes 132 is brought into contact with the corresponding second connection electrodes 203, as shown in fig. 2C.
S104: and irradiating the photosensitive adhesive layer on the transition substrate by adopting first laser so as to enable the micro light-emitting diode chip to fall off from the photosensitive adhesive layer and volatilize the soldering flux.
Specifically, a laser emitting device M is installed on a machine table in the sealed cavity, and first laser L1 emitted by the laser emitting device M enters the transition substrate 10 from the back side of the surface of the transition substrate 10 on which the photosensitive adhesive layer 11 is disposed, as shown in fig. 2D.
The first laser L1 passes through the transparent transition substrate 10 and is irradiated to the photosensitive adhesive layer 11, the photosensitive adhesive layer 11 undergoes a chemical reaction or the like under the heating effect of the first laser L1, so that the viscosity is reduced, the gravity of the micro light emitting diode chip 13 is greater than the viscosity between the photosensitive adhesive layer 11 and the micro light emitting diode chip 13, the micro light emitting diode chip 13 falls off from the photosensitive adhesive layer 11, the flux 12 in the photosensitive adhesive layer 11 is heated and volatilized under the irradiation of the first laser L1, the volatilized flux 12 adheres to the second connection electrode 203 and/or the soldering material 133, and the volatilized flux 12 may also diffuse into the air near the photosensitive adhesive layer 11 to provide an atmosphere of the flux 12, as shown in fig. 2E.
The first laser light L1 may be any one of a super ultraviolet laser light, an infrared laser light, and an ultraviolet laser light. Specifically, the first laser light L1 is an ultraviolet laser light, and the wavelength of the first laser light L1 is greater than or equal to 340 nanometers and less than or equal to 360 nanometers, so that the first laser light L1 has good penetration in the transition substrate 10. For example, the first laser light L1 has a wavelength of 345 nm, 348 nm, 350 nm, 352 nm, 355 nm.
It should be noted that the power density of the photosensitive adhesive layer 11 irradiated by the first laser L1 needs to make the viscosity of the photosensitive adhesive layer 11 after the irradiation of the first laser L1 smaller than the viscosity of the photosensitive adhesive layer 11 before the irradiation of the first laser L1, and also needs to volatilize the flux 12, but the photosensitive adhesive layer 11 cannot be decomposed, so as to avoid the influence of particles formed after the decomposition of the photosensitive adhesive layer 11 on the subsequent welding process.
S105: and irradiating by using a second laser to melt the welding material, wherein the melted welding material is connected with the first connecting electrode and the second connecting electrode under the action of the volatilized soldering flux.
The wavelength of the second laser L2 is the same as that of the first laser L1, so that the second laser L2 and the first laser L1 can be emitted by the same laser emitting device, and it is avoided that the driving substrate 20 needs to be moved by a machine table after the micro light emitting diode chip 13 falls off the driving substrate 20, thereby affecting the alignment accuracy between the first connection electrode 132 of the micro light emitting diode chip 13 and the second connection electrode 203 on the driving substrate 20.
Specifically, the power density of the laser emitting device M is adjusted, the laser emitting device M emits the second laser light L2, the second laser light L2 is incident from the back side of the surface of the transition substrate 10 where the photosensitive adhesive layer 11 is disposed, the second laser light L2 is irradiated to the photosensitive adhesive layer 11, the micro light emitting diode chip 13, and the like through the transition substrate 10, the temperature in the sealed cavity is raised by the heat generated by the irradiation of the second laser light L2, the welding material 133 on the first connecting electrode 132 is melted by the heat generated by the irradiation of the second laser light L2, and the melted welding material 133 bonds the first connecting electrode 132 and the second connecting electrode 203 by the promoting action of the volatilized flux 12, as shown in fig. 2F; the transition substrate 10 is removed, and the micro led chip 13 is fixed on the driving substrate 20, so as to obtain the micro led light-emitting substrate 100, as shown in fig. 2G.
When the solder material 133 is melted by the heat generated by the irradiation with the second laser light L2, the melting point of In or an In alloy is low because the solder material 133 is In or an In alloy, and the power density of the second laser light L2 is reduced, so that damage to the micro light-emitting diode chip 13 when the solder material 133 is melted by the irradiation with the second laser light L2 can be reduced.
It is understood that the wavelength of the first laser light L1 may be different from the wavelength of the second laser light L2, for example, the first laser light L1 is an ultraviolet laser light, and the second laser light L2 is an infrared laser light. The first laser L1 and the second laser L2 are respectively emitted by two different laser emitting devices, but the two different laser emitting devices can be simultaneously installed on the same machine, and are switched to emit the first laser L1 and the second laser L2.
In the method for transferring the micro light-emitting diode, the first laser is adopted to irradiate the photosensitive adhesive layer on the transition substrate, so that the micro light-emitting diode chip falls off from the photosensitive adhesive layer, the soldering flux is volatilized, the second laser is adopted to irradiate, so that the welding material is melted, and the melted welding material is connected with the first connecting electrode and the second connecting electrode under the action of the volatilized soldering flux, so that the first connecting electrode of the micro light-emitting diode chip can be better fixed on the second connecting electrode of the driving substrate through the welding material, the anti-pulling capacity between the first connecting electrode and the second connecting electrode is improved, and the transfer yield of the micro light-emitting diode chip is further improved. Moreover, the first laser irradiation and the second laser irradiation can be realized on the same machine table, so that the moving process of the micro light-emitting diode chip is reduced while the transfer process of the micro light-emitting diode chip is simplified, the micro light-emitting diode chip is prevented from moving in the moving process, and the transfer processing precision of the micro light-emitting diode chip is improved.
Please refer to fig. 3, which is a flowchart illustrating a method for transferring a micro led chip according to another embodiment of the present application. The method for transferring the micro led chip shown in fig. 3 is substantially similar to the method for transferring the micro led chip shown in fig. 1, except that step S201 in fig. 3 is different from step S101 in fig. 1, step S202 in fig. 3 is different from step S102 in fig. 1, and other steps are the same and are not repeated herein. In step S201, the welding material 133 is not present on the first connection electrode 132; and in step S202, the welding material 133 is formed on the second connection electrode 203.
Note that the solder material may be formed on the second connection electrode by means of steel mesh printing or the like.
Further, the welding material 133 may be formed on the first connecting electrode 132 and the second connecting electrode 203 at the same time, and the welding material 133 may be melted by the heating action of the second laser beam to connect the first connecting electrode 132 and the second connecting electrode 203.
The application also provides a micro light-emitting diode array substrate, which is prepared by the transfer method of the micro light-emitting diode chip.
The above description of the embodiments is only for assisting understanding of the technical solutions and the core ideas thereof; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (9)
1. A method for transferring a micro light emitting diode chip is characterized by comprising the following steps:
bonding a micro light-emitting diode chip on a light-transmitting transition substrate by adopting a photosensitive adhesive layer, wherein the micro light-emitting diode chip comprises a first connecting electrode, the first connecting electrode of the micro light-emitting diode chip is positioned on one side of the micro light-emitting diode chip far away from the photosensitive adhesive layer, and the photosensitive adhesive layer comprises soldering flux;
providing a driving substrate, wherein the driving substrate comprises a plurality of second connecting electrodes;
moving the transition substrate to the position above the driving substrate, and aligning the first connecting electrode and the second connecting electrode of the micro light-emitting diode chip, wherein a welding material is formed on the first connecting electrode or/and the second connecting electrode;
irradiating the photosensitive adhesive layer on the transition substrate by adopting first laser so as to enable the micro light-emitting diode chip to fall off from the photosensitive adhesive layer and volatilize the soldering flux;
and irradiating by adopting second laser so as to melt the welding material, and connecting the first connecting electrode and the second connecting electrode by the melted welding material under the action of the volatilized soldering flux.
2. The method for transferring the micro led chip according to claim 1, wherein the wavelength of the first laser is the same as the wavelength of the second laser.
3. The method for transferring the micro led chip according to claim 2, wherein the wavelength of the first laser is greater than or equal to 340 nm and less than or equal to 360 nm.
4. The method for transferring the micro led chip according to claim 1, wherein the wavelength of the first laser is different from the wavelength of the second laser.
5. The method for transferring a micro light emitting diode chip as claimed In claim 1, wherein the soldering material is at least one selected from the group consisting of Au, Al, Cu, Sn, In and Ti.
6. The method for transferring the micro light emitting diode chip as claimed In claim 1 or 5, wherein the solder material is In or an In alloy.
7. The method for transferring the micro led chip according to claim 1, wherein the viscosity of the photoresist layer after the first laser irradiation is smaller than the viscosity of the photoresist layer before the first laser irradiation.
8. The method for transferring the micro led chip according to claim 1 or 7, wherein the material for preparing the photoresist layer comprises one of polyimide type photoresist, acrylate type photoresist and silica gel.
9. The method for transferring the micro led chip according to claim 1, wherein the intermediate substrate is selected from a quartz glass substrate, a sapphire substrate, or a silicon substrate.
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| CN202210424167.5A CN114927456A (en) | 2022-04-21 | 2022-04-21 | Transfer method of micro light-emitting diode chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115178874A (en) * | 2022-09-13 | 2022-10-14 | 长春希达电子技术有限公司 | Laser welding unit, LED chip batch transfer bonding device and method |
| CN117080238A (en) * | 2023-08-31 | 2023-11-17 | 惠科股份有限公司 | Display backboard and micro device transfer method |
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2022
- 2022-04-21 CN CN202210424167.5A patent/CN114927456A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115178874A (en) * | 2022-09-13 | 2022-10-14 | 长春希达电子技术有限公司 | Laser welding unit, LED chip batch transfer bonding device and method |
| CN115178874B (en) * | 2022-09-13 | 2022-12-27 | 长春希达电子技术有限公司 | Laser welding unit, LED chip batch transfer bonding device and method |
| CN117080238A (en) * | 2023-08-31 | 2023-11-17 | 惠科股份有限公司 | Display backboard and micro device transfer method |
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