CN117637929A - Preparation method of LED packaging device and LED packaging device - Google Patents

Preparation method of LED packaging device and LED packaging device Download PDF

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Publication number
CN117637929A
CN117637929A CN202311554622.4A CN202311554622A CN117637929A CN 117637929 A CN117637929 A CN 117637929A CN 202311554622 A CN202311554622 A CN 202311554622A CN 117637929 A CN117637929 A CN 117637929A
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CN
China
Prior art keywords
led
packaging
passivation layer
patterned metal
colloid
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Pending
Application number
CN202311554622.4A
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Chinese (zh)
Inventor
崔永进
秦明惠
程绮琳
梁文科
于倩倩
徐亮
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Foshan Nationstar Semiconductor Co Ltd
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Foshan Nationstar Semiconductor Co Ltd
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Application filed by Foshan Nationstar Semiconductor Co Ltd filed Critical Foshan Nationstar Semiconductor Co Ltd
Priority to CN202311554622.4A priority Critical patent/CN117637929A/en
Publication of CN117637929A publication Critical patent/CN117637929A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses a preparation method of an LED packaging device and the LED packaging device, wherein the preparation method comprises the following steps: providing a temporary carrier plate, and preparing and forming a passivation layer on the temporary carrier plate; preparing a layer of patterning mask on the passivation layer, and evaporating and forming a plurality of patterning metal layers on the passivation layer; setting a chip mounting position on the patterned metal layer, coating solder paste on the chip mounting position to form soldering points, and correspondingly attaching a bonding pad of the chip to the soldering points; forming packaging colloid for coating the LED chip on the patterned metal layer through lamination by a lamination process; the method comprises the steps of (1) describing circuits on the packaging colloid, cutting the packaging colloid along the circuits and forming a plurality of LED packaging devices on a temporary carrier plate; covering a layer of adhesive blue film on the top surface of the LED packaging device; and the passivation layer is processed through etching, so that the temporary carrier plate is stripped. The LED chip is packaged by arranging the patterned metal layer on the temporary carrier plate, so that the process is saved, and the efficiency is improved.

Description

Preparation method of LED packaging device and LED packaging device
Technical Field
The invention mainly relates to the technical field of chip packaging, in particular to a preparation method of an LED packaging device and the LED packaging device.
Background
The existing LED packaging device mainly comprises an LED chip welded on a substrate, a plastic packaging colloid packaged on the substrate, a circuit layer preset on the substrate according to the specification and the size of the LED chip, and a metal layer arranged on the surface of the substrate so as to mount the LED chip on the substrate in a butt joint manner, but the packaging mode requires processing of the circuit on the substrate, so that the preparation process of the LED packaging device is complex and complicated, and the preparation efficiency of the LED packaging device is affected.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a preparation method of an LED packaging device and the LED packaging device.
The invention provides a preparation method of an LED packaging device, which comprises the following steps:
providing a temporary carrier plate, and preparing and forming a passivation layer on the top surface of the temporary carrier plate based on vapor deposition;
preparing a layer of patterned mask on the passivation layer through photoresist, and evaporating and forming a plurality of patterned metal layers on the passivation layer based on the patterned mask;
setting a chip mounting position on each patterned metal layer, coating solder paste on each chip mounting position to form soldering points, and correspondingly attaching bonding pads in a plurality of LED chips to the corresponding soldering points;
laminating the patterned metal layer by an adhesive pressing process to form packaging colloid for coating the LED chips;
a circuit is marked on the packaging colloid, the packaging colloid is cut along the circuit through a cutting mechanism, and a plurality of LED packaging devices are formed on the temporary carrier plate;
covering a layer of adhesive blue film on the top surfaces of the LED packaging devices;
and etching the passivation layer to enable the temporary carrier plate to be stripped from the LED packaging devices.
Further, the preparing a patterned mask layer on the passivation layer through photoresist, and evaporating and forming a plurality of patterned metal layers on the passivation layer based on the patterned mask layer comprises:
spin-coating a photoresist on the passivation layer, and forming a patterning mask exposing a part of the passivation layer on the photoresist through exposure and development;
evaporating a metal material on the patterned mask through an electron beam evaporation bench to form an initial metal layer covering the passivation layer and the photoresist;
and removing the photoresist, and forming a plurality of patterned metal layers on the passivation layer.
Further, setting a chip mounting position on the patterned metal layer, and coating solder paste on the chip mounting position to form a soldering point, wherein correspondingly attaching the bonding pad of the LED chip to the soldering point includes:
marking a chip mounting position on the patterned metal layer, and coating solder paste on the chip mounting position to form a soldering point;
bonding pads of the LED chip are correspondingly attached to the soldering points, and curing operation is carried out on the soldering points through the height Wen Huilu.
Further, the forming the encapsulation colloid for encapsulating the LED chip by laminating the patterned metal layer through the adhesive pressing process includes:
covering initial colloid on the patterned metal layer, so that the initial colloid covers the surface of the patterned metal layer and the LED chip;
and continuously hot-pressing the initial colloid for a first preset time by a preset colloid pressing machine under preset pressing pressure and preset baking temperature to form the packaging colloid.
Further, the preset pressing pressure is P, and the value range of P is: p is more than or equal to 3t and less than or equal to 5t;
the preset baking temperature is F, and the value range of F is as follows: f is more than or equal to 110 ℃ and less than or equal to 150 ℃;
the first preset time is T1, and the value range of T1 is as follows: t is more than or equal to 3h and less than or equal to 5h.
Further, the circuit is depicted on the encapsulation colloid, the encapsulation colloid is cut along the circuit by a cutting mechanism, and a plurality of LED encapsulation devices are formed on the temporary carrier plate, including:
a circuit is marked on the top surface of the packaging colloid, the packaging colloid is cut along the circuit through a grinding wheel, and a plurality of wire grooves are formed on the packaging colloid based on cutting;
the packaging colloid is divided into a plurality of packaging layers based on the plurality of wire grooves, so that a plurality of LED packaging devices are formed on the temporary carrier plate.
Further, the width of the grinding wheel is W, and the value range of W is as follows: w is more than or equal to 40 μm and less than or equal to 100 μm.
Further, the passivation layer is processed through etching, so that the temporary carrier plate is peeled off from the plurality of LED packaging devices, and the method comprises the following steps:
and completely immersing the passivation layer in etching solution, continuously immersing for a second preset time, and etching and eliminating the passivation layer.
Further, the second preset time is T2, and the range of values of T2 is: t2 is more than or equal to 15min and less than or equal to 30min.
The invention also provides an LED packaging device which is prepared and formed based on the preparation method;
the LED packaging device comprises a patterned metal layer, an LED chip arranged on the patterned metal layer and a packaging adhesive layer covering the LED chip;
the bottom surface of the patterned metal layer is leveled with the bottom surface of the packaging adhesive layer.
The invention provides a preparation method of an LED packaging device and the LED packaging device, wherein the preparation method comprises the steps of packaging an LED chip on a temporary carrier plate, stripping the temporary carrier plate after packaging is finished, recycling and reusing the temporary carrier plate, and reducing the process of processing a circuit on the temporary carrier plate by arranging the packaging operation of the temporary carrier plate for carrying the LED chip, thereby simplifying the process of the LED packaging device, and simultaneously packaging a plurality of LED packaging devices on the temporary carrier plate, and improving the preparation efficiency of the LED packaging device.
The LED packaging device prepared based on the preparation method reduces the substrate structure, simplifies the overall structure of the LED device, enables the LED packaging device to adapt to the installation requirement of a miniaturized device, and simultaneously is matched with the patterned metal layer, so that the LED packaging device is convenient to attach to an external circuit board, and the practicability and the reliability of the LED packaging device are improved.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings which are required in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method of fabricating an LED package device in an embodiment of the invention;
FIG. 2 is a schematic diagram of a temporary carrier preparation state in an embodiment of the present invention;
FIG. 3 is a schematic diagram of a patterned metal preparation state in an embodiment of the present invention;
FIG. 4 is a schematic diagram of a soldering point preparation state in an embodiment of the present invention;
FIG. 5 is a schematic diagram of an LED chip bonding state according to an embodiment of the present invention;
FIG. 6 is a schematic diagram showing a preparation state of an encapsulant according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a package colloid dividing state according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of an adhesive blue film bonding state according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of a preparation state of an LED package device according to an embodiment of the present invention;
fig. 10 is a schematic structural diagram of an LED package device according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Embodiment one:
an embodiment of the present invention provides a method for manufacturing an LED package device, please refer to fig. 1 to 9, including:
s11: a temporary carrier plate 1 is provided, and a passivation layer 2 is formed on the top surface of the temporary carrier plate 1 based on vapor deposition preparation.
Specifically, the material of the temporary carrier plate 1 may be a sapphire substrate, the temporary carrier plate 1 may also be a silicon substrate, and the temporary carrier plate 1 is used for carrying components such as a metal layer, an LED chip 4, a packaging colloid 5, and the like, so as to facilitate the molding preparation of the LED packaging device.
Specifically, a silicon dioxide layer, namely the passivation layer 2, may be formed on the temporary carrier 1 by physical vapor deposition, the passivation layer 2 may meet the packaging processing requirement of the LED packaging device, and by preparing the passivation layer 2 of silicon dioxide material, ablation and removal of the passivation layer 2 may be completed by immersion etching, so as to facilitate subsequent removal operation of the temporary carrier 1.
Furthermore, when the temporary carrier plate 1 is a silicon substrate, the passivation layer 2 can be prepared by means of direct current reaction magnetron sputtering, a pulse generator is arranged between a direct current power supply and a film plating system, the output power of the direct current power supply is controlled through the pulse generator, the working frequency of the direct current reaction magnetron sputtering is adjusted, and a silicon dioxide film material with better uniformity can be formed on the temporary carrier plate 1 by means of magnetron sputtering.
Further, the passivation layer 2 may be formed by plasma enhanced chemical vapor deposition, that is, by using gas glow discharge, the thin gas may be ionized under a high frequency electric field to generate an ion body, and the ion body may move along the direction of the electric field under the action of the electric field, so that the ion body is finally deposited on the temporary carrier plate 1, and a silicon dioxide layer is deposited on the temporary carrier plate 1, that is, the passivation layer 2 is formed.
Furthermore, by controlling the deposition time of the silicon dioxide layer, the deposition thickness of the passivation layer 2 is between 1 and 4 mu m, so that the silicon dioxide layer meets the requirements of chip bearing and packaging, the time required for depositing the silicon dioxide layer is reduced, and the preparation efficiency of the silicon dioxide layer is improved.
Further, the passivation layer 2 formed by silicon dioxide is prepared on the temporary carrier plate 1, so that the passivation layer 2 can be rapidly etched and ablated through chemical solution in a subsequent process, the etching and ablating process of the passivation layer 2 is simplified, and the stripping convenience of the temporary carrier plate 1 is improved.
S12: and preparing and forming a patterned mask on the passivation layer 2 through photoresist, and evaporating and forming a plurality of patterned metal layers 3 on the passivation layer 2 based on the patterned mask.
Specifically, a photoresist is coated on the passivation layer 2 in a spin mode, and a patterned mask exposing a part of the passivation layer 2 is formed on the photoresist through exposure and development.
Coating photoresist on the surface of the passivation layer 2 by a spin coating method, covering a patterned baffle on the surface of the photoresist, wherein an opening is formed in the patterned baffle, and the patterned baffle can shield part of the photoresist and expose part of the photoresist;
and the photoresist exposed outside can be fully contacted with light by arranging a parallel light source to irradiate the photoresist, so that the exposure operation is completed.
Specifically, after the patterning baffle is removed, the photoresist is immersed in the developing solution, so that the photoresist after exposure treatment can fully contact with the developing solution and react with the developing solution, and after exposure treatment, the reaction rate of the developing solution and the photoresist can be improved, thereby realizing the effect of rapid ablation of the exposed part of the photoresist.
Further, patterning is performed on the photoresist, so that a patterned mask is formed on the passivation layer 2, so that a metal layer is formed on the passivation layer 2 exposed by the patterned mask through evaporation.
Specifically, an initial metal layer covering the passivation layer 2 and the photoresist is formed by evaporating a metal material on the patterned mask through an electron beam evaporation bench, namely, the metal material is deposited on the patterned mask to form the initial metal layer, and the initial metal layer is self-adaptively attached to the patterned mask and the surface of the passivation layer 2 exposed based on the patterned mask.
Further, the patterned metal layer 3 is formed on the passivation layer 2 by depositing the patterned metal layer on the passivation layer by an electron beam evaporation bench, and the thickness of the patterned metal layer 3 is between 2 μm and 3 μm by adjusting the evaporation rate, the working distance and the working time of the electron beam evaporation bench, so that the patterned metal layer 3 can meet the requirements of the LED chip 4 on the paste packaging.
Specifically, the metal material of the electron beam evaporation table machine is a composite metal material, the composite metal material comprises platinum Pt, copper Cu, chromium Cr and other metal materials, and the platinum Pt, copper Cu, chromium Cr are mixed according to the following ratio of 1:6:3, thereby forming a patterned metal layer 3 formed by the composite metal material on the passivation layer 2, and improving the adhesion capability of the composite metal material to the passivation layer 2 by doping chromium material into copper material so as to form the patterned metal layer 3 on the surface of the passivation layer 2.
Furthermore, the copper metal has good conductivity, the adhesion of the chromium metal to the silicon dioxide is good, the platinum metal can improve the deposition bonding performance between copper and chromium, and a composite metal material is formed by doping a plurality of metals, so that the patterned metal layer 3 can be formed on the passivation layer 2 in a deposition manner, the patterned metal layer 3 is ensured to have good stability and conductivity, and the encapsulation of the LED chip 4 can be satisfied.
Specifically, the patterned metal layer 3 is formed on the passivation layer 2 by removing the patterned mask, and the patterned mask with the initialization metal layer is dissolved and removed based on a chemical solution by immersing the patterned mask in the chemical solution.
Further, after the patterned mask is removed, a plurality of patterned metal layers 3 remain on the passivation layer 2, and any one group of two adjacent patterned metal layers 3 is used for mounting and carrying the LED chip 4.
Further, by controlling the evaporation rate and evaporation time of the electron beam evaporation equipment, a plurality of patterned metal layers 3 with uniform thickness can be formed on the passivation layer 2, the consistency of the plurality of patterned metal layers 3 is improved, the preparation yield of the LED packaging device can be improved, and meanwhile synchronous tin brushing operation is conveniently carried out on the plurality of patterned metal layers 3, so that the preparation efficiency of the LED packaging device is improved.
S13: setting a chip mounting position on each patterned metal layer 3, coating solder paste on each chip mounting position to form a soldering point 7, and correspondingly attaching bonding pads in a plurality of LED chips to the corresponding soldering points 7;
specifically, according to the design of the LED package device, the mounting positions of the LED chips 4 are marked on the patterned metal layers 3 by a laser projection technology in combination with the specification and the size of the LED chips 4, the layout image of the LED package device is input into the laser projection device, and the mounting positions of the LED chips 4 are projected on the patterned metal layers 3 by the laser projection technology.
Further, by adjusting the laser power emitted by the laser projection device, the laser projection device can imprint the mounting positions of the LED chips 4 on the patterned metal layers 3, so that the patterned metal layers 3 on the passivation layer 2 can display the mounting positions of the LED chips 4, and the opposite mounting of the LED chips 4 is realized.
Specifically, the chip mounting position is marked on the patterned metal layer 3, solder paste is coated on the chip mounting position, the bonding pad of the LED chip 4 is correspondingly attached to the solder paste, and the solder paste is cured by the height Wen Huilu.
Further, the spacing between any two phases of patterned metal layers 3 is larger than 100 μm, so as to avoid the situation that solder pastes of the soldering points 7 on two adjacent patterned metal layers 3 are contacted with each other, and electric leakage is caused.
The working parameters of the set point glue device comprise parameters such as a glue dispensing rate, the extrusion quantity of each time of glue dispensing and the like, solder paste is dispensed on the chip mounting positions corresponding to the patterned metal layers 3 through the glue dispensing device, bonding pads of the LED chips 4 are correspondingly attached to the chip mounting positions of the patterned metal layers 3, and the solder paste of the bonding pads of the LED chips 4 is solidified through the height Wen Huilu, so that the soldering fixation of the LED chips 4 is realized.
The dispensing operation is sequentially carried out on the chip mounting positions of the patterned metal layers 3 through the dispensing equipment, the dispensing positions of the dispensing equipment can be precisely controlled, so that all the dispensing operations on the patterned metal layers 3 are finished, and the mounting efficiency of the LED chips is improved.
Further, in this embodiment, the operation of brushing tin paste may be performed on the chip mounting position by brushing tin with a steel mesh, that is, by placing a steel mesh with a corresponding opening on the patterned metal layer 3, exposing the chip mounting position correspondingly to the outside through the steel mesh, and brushing tin paste on the steel mesh, so that the operation of brushing tin paste on the chip mounting position of the patterned metal layer 3 is completed, that is, the operation of filling tin paste on the chip mounting position corresponding to the patterned metal layer 3 is performed, so as to perform the operation of mounting the LED chip 4 on the paste.
Further, through the mode of steel mesh brushing tin, the operation of coating tin cream can be accomplished fast to form the soldering point position 7 on the chip mounted position of a plurality of patterning metal layer 3, with a plurality of LED chips 4 corresponding laminating on the soldering point position 7, can carry out high Wen Huilu soldering operation simultaneously to a plurality of LED chips 4, improve the installation effectiveness of LED chip 4.
Further, a plurality of patterned metal layers 3 are formed by dividing a single metal layer, so that silk screens are covered on the surfaces of the patterned metal layers 3, synchronous tin brushing operation of the patterned metal layers 3 is achieved, tin brushing efficiency of the patterned metal layers 3 can be improved, batch transfer tin soldering operation of LED chips can be achieved by matching with an LED chip transfer plate, and therefore processing efficiency of LED chip tin soldering is improved.
Furthermore, through the wire mesh tin brushing operation, the consistency of tin paste on the patterned metal layers 3 can be improved, so that the reliability of the LED chip tin soldering operation is improved.
S14: and pressing the patterned metal layer 3 by an adhesive pressing process to form an encapsulation colloid 5 for coating the LED chip 4.
Specifically, the patterned metal layer 3 is covered with an initial colloid, so that the initial colloid coats the surface of the patterned metal layer 3 and the LED chip 4, and the method includes:
setting up interim box dam the patterning metal layer 3 top encloses and closes and form the framework structure, through pouring plastic envelope glue in the box structure that the box dam encloses and closes and form, the framework structure is used for restricting the flow of plastic envelope glue, through the adjustment the environmental parameter at plastic envelope glue place for plastic envelope glue preliminary shaping will interim box dam is demolishd, makes be formed with initial colloid on the patterning metal layer 3.
Further, pouring the plastic package glue into a frame structure formed by enclosing the temporary enclosing plates, standing the plastic package glue for 10 minutes, keeping the environment where the plastic package glue is located as a dry environment, keeping the external environment between 80 ℃ and 100 ℃, and enabling the plastic package glue to be primarily cured and formed through standing.
Specifically, the hot-pressing equipment is used for carrying out press-fitting shaping on the plastic package glue, the size and the dimension of a press-fitting die of the hot-pressing equipment are adjusted, the temporary carrier plate 1 is fixed on a processing station of the hot-pressing equipment, the initial colloid formed by the plastic package glue is contained in the press-fitting die, and the hot-pressing equipment can carry out press-fitting shaping in the plastic package glue by adjusting the working parameters of the hot-pressing equipment.
Further, the glue press is set to continuously heat-press the initial glue for a first preset time under the preset pressing pressure and the preset baking temperature, so as to form the packaging glue 5.
The preset pressing pressure is P, and the value range of P is as follows: p is more than or equal to 3t and less than or equal to 5t;
the preset baking temperature is F, and the value range of F is as follows: f is more than or equal to 110 ℃ and less than or equal to 150 ℃;
the first preset time is T1, and the value range of T1 is as follows: t is more than or equal to 3h and less than or equal to 5h.
In this embodiment, the preset pressing pressure P is set to be 5T, the preset baking temperature F is 120 ℃, and the first preset time T1 is 4.5h, so that the initial adhesive body can be cured and formed to form the encapsulation adhesive body 5, and the combination of the encapsulation adhesive body 5, the passivation layer 2 and the patterned metal layer 3 is good, so as to improve the encapsulation effect of the LED chip 4.
Further, the pressing mold can limit the shape change of the initial colloid, so that the initial colloid is completely contained in the pressing mold, and based on the pressing effect of the hot pressing equipment, the initial colloid can be completely attached to the inside of the pressing mold, and thus the molding can be performed quickly.
Furthermore, according to the packaging and light-emitting requirements of the LED chips 4, by preparing proper packaging colloid and synchronously performing plastic packaging on a plurality of LED chips 4, the light-emitting consistency of a plurality of prepared LED packaging devices can be ensured to be high, namely, the light-emitting consistency of the LED packaging devices prepared in the same batch is good, and the preparation yield of the LED packaging devices is improved.
S15: and (3) a circuit is marked on the encapsulation colloid 5, the encapsulation colloid 5 is cut along the circuit by a cutting mechanism, and a plurality of LED encapsulation devices are formed on the temporary carrier plate 1.
Specifically, the circuit is depicted on the top surface of the packaging colloid 5, the packaging colloid 5 is cut along the circuit by the grinding wheel, a plurality of wire grooves are formed on the packaging colloid 5 based on cutting, the width of the grinding wheel is W, and the value range of the W is as follows: w is more than or equal to 40 mu m and less than or equal to 100 mu m, namely, a plurality of wire grooves with the width of 40 mu m to 100 mu m can be cut on the sealing colloid through grinding wheel cutting, and a proper grinding wheel is selected according to the arrangement of the intervals between the metal layers in the patterned metal layer 3 and the convenience requirement of actual processing, so that the packaging cutting requirement of the LED packaging device is met.
Further, based on the grinding wheel cutting, the packaging colloid 5 can be divided into a plurality of packaging layers, each packaging layer corresponds to one LED packaging device, namely, a plurality of LED packaging devices are formed on the temporary carrier plate 1, any one of the LED packaging devices comprises at least two pattern metal layers 3 and one LED chip 4, the packaging colloid 5 is covered on the plurality of pattern metal layers 3, so that the plastic packaging operation of a plurality of LED packaging devices can be simultaneously met, and the plurality of LED packaging devices can be conveniently divided based on the grinding wheel cutting, so that the preparation efficiency of the LED packaging devices is improved.
Specifically, in this embodiment, the operation of marking the circuit on the encapsulant 5 may be performed by a laser marking device, that is, by adjusting the power of the laser beam, and by controlling the routing of the laser on the encapsulant 5, the circuit is marked on the surface of the encapsulant 5.
Furthermore, a circuit layout image can be input into the laser marking device, the laser marking device is controlled to project the layout image on the packaging colloid 5 by the input circuit, and the marking of the circuit layout can be completed on the packaging colloid 5 by the laser marking device by adjusting the output power of the laser marking device.
Further, the grinding wheel cutting machine is controlled to position the corresponding painting lines on the packaging colloid 5, the initial position of the grinding wheel cutting is determined, the moving path of the grinding wheel is adjusted, and the packaging colloid 5 is cut along the painting lines on the packaging colloid 5.
Further, the cutting depth of the grinding wheel is adjusted, so that the bottom end of the grinding wheel can be in contact with the passivation layer 2, and a wire groove formed by cutting the grinding wheel can be exposed out of the passivation layer 2. According to the thickness of the encapsulation body 5 and the cutting speed of the grinding wheel, the cutting depth of the grinding wheel along the vertical direction is set, so that the grinding wheel can contact the passivation layer 2, and cutting marks are formed on the surface of the passivation layer 2.
Further, through the cutting trace, it can be ensured that the grinding wheel cutting can be completely divided into a plurality of packaging layers by the packaging colloid 5, and the convenience of detecting the grinding wheel cutting effect is improved.
S16: covering a layer of adhesive blue film 6 on the top surfaces of the LED packaging devices;
specifically, the top surface of the encapsulation colloid 5 is covered with a sticky blue film 6, and a plurality of LED encapsulation devices formed by cutting and dividing are temporarily fixed, and one surface of the sticky blue film 6 with the sticky is covered on the top surfaces of a plurality of LED encapsulation devices, so that after the temporary carrier plate 1 is peeled off, a plurality of LED encapsulation devices can be arranged in an array, and convenience of transferring and electric lighting testing of the plurality of LED encapsulation devices is improved.
S17: and etching the passivation layer 2 to peel off the temporary carrier plate 1 from a plurality of LED packaging devices.
And completely immersing the passivation layer 2 in an etching solution, continuously immersing for a second preset time, and etching and eliminating the passivation layer 2, thereby stripping the temporary carrier plate 1 and completing the encapsulation of a plurality of LED encapsulation devices.
The second preset time is T2, and the value range of T2 is as follows: and (3) completely immersing the passivation layer 2 in a liquid hydrofluoric acid solution for 15min or less and 30min, and etching and ablating the passivation layer 2 through the hydrofluoric acid solution, namely, sufficiently contacting silicon dioxide with the hydrofluoric acid solution and carrying out chemical reaction, so that the passivation layer 2 is ablated and removed, and the temporary carrier plate 1 is removed.
Further, the LED packaging device is cleaned through purified water, so that the hydrofluoric acid solution is prevented from remaining at the bottom of the patterned metal layer 3 of the LED packaging device, and the influence of the hydrofluoric acid solution on the LED packaging device is reduced.
Furthermore, the temporary carrier plate 1 can be recycled, and the temporary carrier plate 1 can be used for the preparation process of the next batch of LED packaging devices after being cleaned, namely, the temporary carrier plate 1 can be recycled and reused, so that the material waste for preparing the LED packaging devices is reduced.
Specifically, by setting the adhesive blue film 6, the segmented plurality of LED package devices are temporarily fixed, that is, the plurality of LED package devices can maintain an array arrangement relationship, so that the plurality of LED package devices are tested through a probe station, metal probes of an anode and a cathode are connected to each LED package device, and parameters such as brightness, wavelength, electric leakage and the like of the LED package devices are tested under preset current and voltage, so that the luminous reliability of the LED package devices is evaluated.
The embodiment of the invention provides a preparation method of an LED packaging device, which is characterized in that a patterned metal layer 3 is arranged on a temporary carrier plate 1 and an LED chip 4 is packaged, a plurality of LED packaging devices are packaged on the temporary carrier plate 1 at the same time, the carrying effect of the LED packaging devices is realized through the temporary carrier plate 1, the process steps of processing circuits on the temporary carrier plate 1 are reduced, the packaging process of the LED packaging devices is simplified, and the preparation efficiency of the LED packaging devices is improved.
Embodiment two:
referring to fig. 10, an embodiment of the present invention provides an LED package device, including: the LED chip comprises a patterned metal layer 3, an LED chip 4 arranged on the patterned metal layer 3 and an encapsulation colloid 5 covering the LED chip 4, wherein the bottom surface of the patterned metal layer 3 is level with the bottom surface of the encapsulation colloid 5.
Further, the setting of base plate is reduced to the LED packaging device, can simplify the overall dimension of LED packaging device for the LED packaging device can be suitable for the installation preparation at miniaturized display device, improves the commonality of LED packaging device promptly, satisfies the electric connection demand of LED packaging device through setting up patterning metal layer 3, reduces complicated circuit design, and realizes the electric connection of LED packaging device and circuit board based on patterning metal layer 3, improves the electric connection stability between LED packaging device and the circuit board, patterning metal layer 3 can adjust according to the actual connection demand of circuit board, can improve the reliability of LED packaging device.
Further, by arranging the single-layer patterned metal layer 3 and matching with the simplified structure without a substrate, the heat dissipation efficiency of the LED packaging device can be improved, the heat accumulation in the LED packaging device can be reduced, the risk of serious heating of the LED packaging device can be reduced, and the effective service life of the LED packaging can be prolonged.
Specifically, the thickness of the patterned metal layer 3 is between 2 μm and 3 μm, and the interval between the metal layers in the patterned metal layer 3 can be adjusted according to the packaging size of the LED packaging device, so as to meet the packaging requirement of the LED packaging device.
Further, the material of the patterned metal layer 3 may be one or more of platinum Pt, copper Au, and chromium Cr, so that the patterned metal layer 3 can meet the requirements of soldering and fixing and electrical connection of the LED chip 4.
Specifically, the material of the encapsulation colloid 5 may be epoxy resin, silica gel, silicone resin, a cake, or a fluorescent film, the thickness of the encapsulation colloid 5 may be adjusted according to the actual encapsulation requirement of the LED package device, and the thickness of the encapsulation colloid 5 is between 50 μm and 500 μm, and the encapsulation colloid 5 may completely encapsulate the LED chip 4, so as to avoid direct contact between the LED chip 4 and the external environment, and reduce the damage risk of the LED chip 4.
Further, the epoxy resin has better heat resistance, insulativity and stability, so that the epoxy resin can meet the packaging requirement of the LED chip 4.
Furthermore, according to the actual use requirement of the LED package device, the fluorescent powder may be added into the silicone resin or the epoxy resin, and the fluorescent glue film may be formed by fully mixing, so that the packaging colloid 5 may meet the packaging requirement of the LED chip 4, and adjust the light color of the LED package device.
Further, by setting the encapsulant 5, the light emitting angle, the light emitting intensity, and the like of the LED chip 4 may be adjusted by light refraction inside the encapsulant 5.
Specifically, the bottom surface of the patterned metal layer 3 is flush with the bottom surface of the encapsulation colloid 5, and the patterned metal layer 3 may be connected to an external circuit, so as to meet the normal use of the LED package device, and the setting interval of the patterned metal layer 3 may be set according to the actual package requirement of the LED package device.
The embodiment of the invention provides an LED packaging device, which completes the packaging of an LED chip 4 by arranging a patterned metal layer 3 and matching with a packaging colloid 5, simplifies the packaging operation of the LED chip 4, improves the packaging efficiency of the LED chip 4, and can reduce the overall size of the LED packaging device so as to adapt to the installation requirements of different LED packaging devices.
In addition, the preparation method of the LED package device and the LED package device provided by the embodiments of the present invention are described in detail, and specific examples should be adopted to illustrate the principles and embodiments of the present invention, and the description of the above examples is only used to help understand the method and core ideas of the present invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.

Claims (10)

1. The preparation method of the LED packaging device is characterized by comprising the following steps of:
providing a temporary carrier plate, and preparing and forming a passivation layer on the top surface of the temporary carrier plate based on vapor deposition;
preparing a layer of patterned mask on the passivation layer through photoresist, and evaporating and forming a plurality of patterned metal layers on the passivation layer based on the patterned mask;
setting a chip mounting position on each patterned metal layer, coating solder paste on each chip mounting position to form soldering points, and correspondingly attaching bonding pads in a plurality of LED chips to the corresponding soldering points;
laminating the patterned metal layer by an adhesive pressing process to form packaging colloid for coating the LED chips;
a circuit is marked on the packaging colloid, the packaging colloid is cut along the circuit through a cutting mechanism, and a plurality of LED packaging devices are formed on the temporary carrier plate;
covering a layer of adhesive blue film on the top surfaces of the LED packaging devices;
and etching the passivation layer to enable the temporary carrier plate to be stripped from the LED packaging devices.
2. The method of manufacturing an LED package device of claim 1, wherein forming a patterned mask on the passivation layer by photoresist preparation, and forming a plurality of patterned metal layers on the passivation layer by vapor deposition based on the patterned mask comprises:
spin-coating a photoresist on the passivation layer, and forming a patterning mask exposing a part of the passivation layer on the photoresist through exposure and development;
evaporating a metal material on the patterned mask through an electron beam evaporation bench to form an initial metal layer covering the passivation layer and the photoresist;
and removing the photoresist, and forming a plurality of patterned metal layers on the passivation layer.
3. The method for manufacturing the LED package device according to claim 1, wherein the setting a chip mounting position on each patterned metal layer, and coating solder paste on each chip mounting position to form solder points, and correspondingly attaching bonding pads in a plurality of LED chips to the corresponding solder points comprises:
marking a chip mounting position on the patterned metal layer, and coating solder paste on the chip mounting position to form a soldering point;
bonding pads of the LED chip are correspondingly attached to the soldering points, and curing operation is carried out on the soldering points through the height Wen Huilu.
4. The method for manufacturing an LED package device according to claim 1, wherein the forming the encapsulant covering the plurality of LED chips on the patterned metal layer by lamination through a lamination process includes:
covering initial colloid on the patterned metal layer, so that the initial colloid covers the surface of the patterned metal layer and the LED chip;
and continuously hot-pressing the initial colloid for a first preset time by a preset colloid pressing machine under preset pressing pressure and preset baking temperature to form the packaging colloid.
5. The method for manufacturing an LED package device according to claim 4, wherein the preset bonding pressure is P, and the range of values of P is: p is more than or equal to 3t and less than or equal to 5t;
the preset baking temperature is F, and the value range of F is as follows: f is more than or equal to 110 ℃ and less than or equal to 150 ℃;
the first preset time is T1, and the value range of T1 is as follows: t is more than or equal to 3h and less than or equal to 5h.
6. The method of manufacturing an LED package device of claim 1, wherein patterning a circuit on the encapsulant, cutting the encapsulant along the circuit by a cutting mechanism and forming a plurality of LED packages devices on the temporary carrier plate comprises:
a circuit is marked on the top surface of the packaging colloid, the packaging colloid is cut along the circuit through a grinding wheel, and a plurality of wire grooves are formed on the packaging colloid based on cutting;
the packaging colloid is divided into a plurality of packaging layers based on the plurality of wire grooves, so that a plurality of LED packaging devices are formed on the temporary carrier plate.
7. The method for manufacturing an LED package device of claim 6, wherein the grinding wheel has a width W, and the value range of W is: w is more than or equal to 40 μm and less than or equal to 100 μm.
8. The method of manufacturing an LED package device of claim 1, wherein the step of removing the temporary carrier from the plurality of LED package devices by etching the passivation layer comprises:
and completely immersing the passivation layer in etching solution, continuously immersing for a second preset time, and etching and eliminating the passivation layer.
9. The method for manufacturing an LED package device according to claim 8, wherein the second preset time is T2, and the range of values of T2 is: t2 is more than or equal to 15min and less than or equal to 30min.
10. An LED package device, characterized in that the LED package device is formed based on the manufacturing method according to any one of claims 1 to 9;
the LED packaging device comprises a patterned metal layer, an LED chip arranged on the patterned metal layer and a packaging adhesive layer covering the LED chip;
the bottom surface of the patterned metal layer is leveled with the bottom surface of the packaging adhesive layer.
CN202311554622.4A 2023-11-20 2023-11-20 Preparation method of LED packaging device and LED packaging device Pending CN117637929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311554622.4A CN117637929A (en) 2023-11-20 2023-11-20 Preparation method of LED packaging device and LED packaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311554622.4A CN117637929A (en) 2023-11-20 2023-11-20 Preparation method of LED packaging device and LED packaging device

Publications (1)

Publication Number Publication Date
CN117637929A true CN117637929A (en) 2024-03-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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