CN211654853U - Ceramic substrate for UVLED packaging - Google Patents
Ceramic substrate for UVLED packaging Download PDFInfo
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- CN211654853U CN211654853U CN202020205570.5U CN202020205570U CN211654853U CN 211654853 U CN211654853 U CN 211654853U CN 202020205570 U CN202020205570 U CN 202020205570U CN 211654853 U CN211654853 U CN 211654853U
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Abstract
The utility model discloses a UVLED packaged ceramic substrate, including the ceramic substrate body, the positive integrated into one piece base plate metal box dam of ceramic substrate body is provided with base plate positive bottom layer wiring structure between ceramic substrate body and the base plate metal box dam, and the inboard of base plate metal box dam is provided with base plate box dam step, and base plate negative pole zener diode pad still sets up the base plate negative pole wiring via hole and the base plate positive negative pole wiring via hole that are located base plate positive and negative pole both sides; the inner side of the substrate back bottom layer wiring structure is provided with a substrate back electrode, the side surface of the substrate back electrode is provided with a substrate back electrode via hole, a substrate back stratum heat conduction structure is arranged between the two substrate back electrode via holes, and the substrate back electrode via hole is positioned in the positive and negative and stratum structures of the substrate. The utility model discloses can extensively be used for the product of UVLED encapsulation, it is low to have the solid/eutectic welding voidage of chip, and the heat dissipation is good, long service life, and the structure can be general to wait advantage, is applicable to extensive automated production.
Description
Technical Field
The utility model relates to a UVLED power device encapsulates technical field, specifically is a ceramic substrate of UVLED encapsulation.
Background
In the packaging process of LED products, the light source using the LED ceramic substrate support as the substrate has the advantages of energy conservation, environmental protection and long service life, has very important strategic significance for increasingly prominent society with energy supply tension, further expands the field of UVLED industry under the development trend, and focuses on developing UVLED products with high power, high brightness and small size, so that the ceramic substrate support with high heat dissipation performance and precise size is the trend of future market packaging application of the UVLED industry.
In an electronic material packaged by a UVLED chip, how to improve the luminous efficiency and the service life of the UV chip and solve the problems of chip heating and heat dissipation of a UVLED light source product are key important technologies researched by various packaging manufacturers and substrate support processing manufacturers, higher requirements are also provided for a surface-mounted ceramic substrate support matched with the UVLED light source product, how to control the surface flatness of the substrate and the wiring design of the structure in the prior art are more the quality of heat dissipation after chip solid/eutectic welding and the measurement basis of the service life of lamp beads.
Disclosure of Invention
An object of the utility model is to provide a ceramic substrate of UVLED encapsulation can extensively be used for the product of UVLED encapsulation, and it is low to have the solid/eutectic welding voidage of chip, and the heat dissipation is good, long service life, and the structure can advantage such as general, is applicable to extensive automated production, can solve the problem among the prior art.
In order to achieve the above object, the utility model provides a following technical scheme:
a UVLED packaged ceramic substrate comprises a ceramic substrate body, wherein a substrate metal dam is integrally formed on the front surface of the ceramic substrate body, a substrate front bottom layer wiring structure is arranged between the ceramic substrate body and the substrate metal dam, a substrate dam step is arranged on the inner side of the substrate metal dam, a substrate cathode Zener diode pad is arranged on the inner side of the substrate dam step, the anode and the cathode of a substrate are welded on the substrate cathode Zener diode pad, and a substrate cathode wiring hole and a substrate anode and cathode wiring hole are formed in the substrate cathode Zener diode pad and are positioned on the two sides of the anode and the cathode of the substrate;
the back of ceramic substrate body sets up base plate back bottom layer wiring structure, the inboard of base plate back bottom layer wiring structure sets up base plate back electrode, the side of base plate back electrode sets up base plate back electrode via hole, two set up base plate back stratum heat conduction structure between the base plate back electrode via hole, base plate back electrode via hole is located the positive negative and stratum structure of base plate.
Preferably, the material of the ceramic substrate body is aluminum oxide, aluminum nitride or silicon nitride.
Preferably, the patterns of the substrate metal dam can be circular, square, rectangular or square inside and outside, and square inside and outside, the number of patterns PAD in the substrate metal dam is more than two, the number of electrode via holes in the substrate metal dam is more than two, the number of inner PADs is two, the chip placement area is a positive electrode, the routing binding connection position is a negative electrode, the design distance between the positive electrode and the negative electrode is 0.08-0.2MM, the negative electrode chip is positioned in the central area of the substrate pattern, the electrode at the back of the substrate metal dam and the ground layer are filled and insulated in a resin solder mask ink printing mode, and the substrate metal dam can be provided with a substrate dam step or a plane dam.
Preferably, the height of the substrate metal box dam is 50-1500UM, the metal thickness is 10-100UM, the size is 3232, 3535, 3838, 4545 and 5050, the planar thickening of the substrate metal box dam and the thickness of the metal layer balance stress are 0.05-1mm, and the surface treatment is gold immersion, nickel-palladium-gold immersion, tin immersion and silver immersion.
Preferably, the height of the step of the substrate dam is 50-1500 UM.
Preferably, the welding pattern position of the bottom of the chip of the ceramic substrate body is a thermoelectric separation structure, and the distance between an electrode and a ground layer is designed to be 0.2-0.8 MM.
Preferably, the number of the chip packages in the substrate metal dam is one or more in series-parallel combination.
Preferably, the material of the substrate metal dam and the planar substrate circuit is copper, nickel, tungsten, silver.
Compared with the prior art, the beneficial effects of the utility model are as follows:
according to the UVLED packaged ceramic substrate, the chip packaging graph is designed in the central area of the substrate, the intervals are reserved around the chip packaging graph to prevent the diffusion and tin leakage when tin paste or solder resist is applied to packaging solid/eutectic, so that the substrate and the chip can be fully welded without the defect of poor solid/eutectic cavities, the increase of the heat dissipation effect and the service life of the packaged product is facilitated, the graph structure is stable and reasonable, and the UVLED packaged ceramic substrate is high in UVLED market packaging application utilization rate.
Drawings
FIG. 1 is a schematic front view of a single product of the present invention;
fig. 2 is a schematic view of the back of a single product of the present invention.
In the figure: 1. a ceramic substrate body; 2. a bottom wiring structure on the front surface of the substrate; 3. a substrate negative wiring via hole; 4. a substrate metal dam; 5. a substrate dam step; 6. a substrate cathode zener diode pad; 7. a positive electrode and a negative electrode of the substrate; 8. wiring conducting holes of the positive electrode and the negative electrode of the substrate; 9. a substrate back bottom wiring structure; 10. a substrate back electrode; 11. a substrate back electrode via hole; 12. a stratum heat conduction structure on the back of the substrate; 13. positive and negative of the substrate and the stratum structure.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-2, a ceramic substrate for uv led package comprises a ceramic substrate body 1, a substrate metal dam 4 integrally formed on the front surface of the ceramic substrate body 1, a substrate front bottom wiring structure 2 disposed between the ceramic substrate body 1 and the substrate metal dam 4, a substrate dam step 5 disposed on the inner side of the substrate metal dam 4, a substrate cathode zener diode pad 6 disposed on the inner side of the substrate dam step 5, a substrate anode and cathode 7 welded on the substrate cathode zener diode pad 6, a substrate cathode wiring via 3 disposed on both sides of the substrate anode and cathode 7, and a substrate anode and cathode wiring via 8 disposed on the inner side of the substrate cathode 7, wherein the chip bottom welding pattern of the ceramic substrate body 1 is a thermoelectric separation structure, the number of core chips packaged in the substrate metal dam 4 is one or more strings and combinations, and the distance between the electrode and the ground layer is 0.2-0.8MM, the chip packaging solid/eutectic position is reserved with a groove to form an independent welding area, so that the chip is not easy to diffuse when tin paste or solder resist is applied to the substrate packaging solid/eutectic, a gold-tin layer at the bottom of the chip can be fully contacted with the surface of the substrate when the solid/eutectic is applied, the welding is firm during chip packaging, the chip packaging substrate is superior to the chip packaging substrate structure design used in the current market, and the general packaging of the pattern specification is very convenient.
The back of the ceramic substrate body 1 is provided with a substrate back bottom layer wiring structure 9, the inner side of the substrate back bottom layer wiring structure 9 is provided with a substrate back electrode 10, the side surface of the substrate back electrode 10 is provided with a substrate back electrode via hole 11, a substrate back stratum heat conduction structure 12 is arranged between the two substrate back electrode via holes 11, and the substrate back electrode via hole 11 is positioned in a substrate positive-negative and stratum structure 13.
The material of the ceramic substrate body 1 is alumina, aluminum nitride or silicon nitride.
The patterns of the substrate metal dam 4 can be circular, square, rectangular or square inside and outside, the PAD of the patterns in the substrate metal dam 4 is more than two, the electrode conducting holes in the substrate metal dam 4 are more than two, the inner PADs are two, the chip placing area is a positive electrode, the routing binding and connecting position is a negative electrode, the design distance between the positive electrode and the negative electrode is 0.08-0.2MM, the negative electrode chip is positioned in the central area of the substrate pattern, the electrode at the back of the substrate metal dam 4 and the ground layer are filled and insulated in a resin solder mask ink printing mode, and the substrate metal dam 4 can be provided with a substrate dam step 5 or a plane dam.
The height of the substrate metal box dam 4 is 50-1500UM, the metal thickness is 10-100UM, the size is 3232, 3535, 3838, 4545 and 5050, the planar thickening of the substrate metal box dam 4 is added with the thickness balance stress of the metal layer, the thickness is 0.05-1mm, and the surface treatment is the gold immersion, nickel-palladium-gold immersion, tin immersion and silver immersion process.
The height of the substrate dam step 5 is 50-1500UM, and the substrate metal dam 4 and the planar substrate circuit are made of copper, nickel, tungsten and silver.
The processing process of the UVLED packaged ceramic substrate is as follows:
1. punching a substrate: the laser beam is focused on the ceramic workpiece through an optical system by adopting an optical fiber pulse or a violet laser, and the processed surface part is melted, gasified and evaporated by utilizing the laser pulse with high energy density, so that the material is removed to realize the small hole processing.
2. Ultrasonic cleaning: and cleaning the residual oxide in the holes after the laser drilling by using an ultrasonic machine.
3. Sputtering and coating: under the action of an electric field, TiW, Ti, Ni and Cu target electrons collide with argon atoms in the process of flying to a substrate under high vacuum, so that the argon atoms are ionized to generate Ar positive ions and new electrons; new electrons fly to the substrate, Ar ions are accelerated to fly to the cathode target under the action of an electric field, and bombard the surface of the target at high energy, so that the target is sputtered. In the sputtered particles, neutral target atoms or molecules are deposited on the substrate to form a thin film with a thickness of 0.01-10 um.
4. Electroplating and thickening the whole plate: the conducting layer after sputtering coating is thickened to 0.5-50um by utilizing the principle of chemical copper deposition or direct current or pulse rectifier electroplating.
5. Pasting, exposing and developing: the method comprises the steps of heating and pressurizing a photoetching photosensitive adhesive film on a substrate, transferring a circuit pattern on a film negative film to the electroplated and thickened substrate under the irradiation of parallel light or an astigmatic source ultraviolet light, and then removing exposed unpolymerized photosensitive adhesive through a Na2CO3 developing solution to form a required product pattern.
6. Electroplating to thicken the metal layer: electroplating and thickening the product exposure pattern layer to 10-200um by using the electroplating principle of a direct current or pulse rectifier
7. Abrasive belt grinding: and (4) polishing the electroplated metal layer by using water sand paper and a flat grinding machine (abrasive belt mesh number model 240# -3500 #).
8. Dam pasting/exposure/development: the method comprises the steps of coating a photosensitive photoresist film on a ceramic substrate under the conditions of heating and pressurizing, transferring a box dam pattern on a film negative film to the polished ceramic substrate under the irradiation of parallel light or an astigmatic source ultraviolet light, and removing the exposed unpolymerized photosensitive photoresist through a Na2CO3 developing solution to form the box dam pattern of the product required by people.
9. Electroplating a thickened dam metal layer: electroplating and thickening the exposed box dam pattern layer of the product to 50-1500um by using the electroplating principle of a direct current and pulse rectifier
10. Abrasive belt grinding: and (4) polishing the metal layer electroplated on the dam smoothly by using water sand paper and a flat grinding machine (abrasive belt mesh number model 240# -3500 #).
11. Film removing and etching: and removing the photoresist hot-pressed on the ceramic substrate by adopting NaOH, kOH and organic alkali liquor, cleaning, and etching the product pattern by adopting an etching solution of an acid system or an alkaline system.
12. Solder resist preparation: according to the welding use requirements of customers, the required insulation area of the product graph is covered by adopting photosensitive resin ink of red, green, white, black and the like by means of screen printing or machine coating, and post-curing is carried out at high temperature (100-.
13. Surface treatment: according to different mounting requirements of customers, a layer of gold-depositing, silver-depositing, nickel-palladium-gold-depositing, gold-electroplating and silver-electroplating coating is additionally plated on the product graphic area, so that the mounting of devices on the surfaces of the customers is facilitated.
14. Pre-cutting and forming: and pre-cutting or cutting the surface-treated product into pieces according to the size requirement of a customer by adopting an optical fiber pulse or a carbon dioxide laser.
According to the UVLED packaged ceramic substrate, the chip packaging graph is designed in the central area of the substrate, the intervals are reserved around the chip packaging graph to prevent the diffusion and tin leakage when tin paste or solder resist is applied to packaging solid/eutectic, so that the substrate and the chip can be fully welded without the defect of poor solid/eutectic cavities, the increase of the heat dissipation effect and the service life of the packaged product is facilitated, the graph structure is stable and reasonable, and the UVLED packaged ceramic substrate is high in UVLED market packaging application utilization rate.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. A ceramic substrate of UVLED encapsulation, includes ceramic substrate body (1), its characterized in that: the front surface of the ceramic substrate body (1) is integrally formed with a substrate metal dam (4), a substrate front bottom layer wiring structure (2) is arranged between the ceramic substrate body (1) and the substrate metal dam (4), a substrate dam step (5) is arranged on the inner side of the substrate metal dam (4), a substrate cathode Zener diode pad (6) is arranged on the inner side of the substrate dam step (5), substrate anodes and cathodes (7) are welded on the substrate cathode Zener diode pad (6), and substrate cathode wiring (3) and substrate anode and cathode wiring via holes (8) located on two sides of the substrate anodes and cathodes (7) are further formed in the substrate cathode Zener diode pad (6);
the back of ceramic substrate body (1) sets up base plate back bottom layer wiring structure (9), the inboard of base plate back bottom layer wiring structure (9) sets up base plate back electrode (10), the side of base plate back electrode (10) sets up base plate back electrode conducting hole (11), two set up base plate back stratum heat conduction structure (12) between base plate back electrode conducting hole (11), base plate back electrode conducting hole (11) are located positive and negative and stratum structure (13) of base plate.
2. A ceramic substrate for a uv led package according to claim 1, wherein: the ceramic substrate body (1) is made of aluminum oxide, aluminum nitride or silicon nitride.
3. A ceramic substrate for a uv led package according to claim 1, wherein: the figure of base plate metal box dam (4) can be circular, square, the rectangle, rectangle form or interior round outside, interior square excircle, figure PAD is more than two in base plate metal box dam (4), base plate metal box dam (4) inner electrode conducting hole is more than two, interior PAD is two for positive and negative, the chip is placed the region and is the positive pole, routing binding connection position is the negative pole, the design distance between the positive and negative pole is 0.08-0.2MM, the negative pole chip position is in the central zone of base plate figure, base plate metal box dam (4) back position electrode adopts resin solder mask printing mode to fill level with the ground and is insulating, base plate metal box dam (4) can have base plate box dam step (5) or be the plane box dam.
4. A ceramic substrate for a uv led package according to claim 1, wherein: the height of the substrate metal box dam (4) is 50-1500UM, the metal thickness is 10-100UM, the sizes are 3232, 3535, 3838, 4545 and 5050, the planar thickening of the substrate metal box dam (4) is added with the metal layer thickness balance stress, the thickness is 0.05-1mm, and the surface treatment is gold immersion, nickel-palladium-gold immersion, tin immersion and silver immersion.
5. A ceramic substrate for a uv led package according to claim 1, wherein: the height of the base plate dam step (5) is 50-1500 UM.
6. A ceramic substrate for a uv led package according to claim 1, wherein: the bottom of the chip of the ceramic substrate body (1) is welded in a pattern position of a thermoelectric separation structure, and the distance between an electrode and a ground layer is designed to be 0.2-0.8 MM.
7. A ceramic substrate for a uv led package according to claim 1, wherein: the packaging quantity of the chips in the substrate metal dam (4) is one or more in series-parallel combination.
8. A ceramic substrate for a uv led package according to claim 1, wherein: the substrate metal dam (4) and the planar substrate circuit are made of copper, nickel, tungsten and silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020205570.5U CN211654853U (en) | 2020-02-25 | 2020-02-25 | Ceramic substrate for UVLED packaging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020205570.5U CN211654853U (en) | 2020-02-25 | 2020-02-25 | Ceramic substrate for UVLED packaging |
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| Publication Number | Publication Date |
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| CN211654853U true CN211654853U (en) | 2020-10-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202020205570.5U Active CN211654853U (en) | 2020-02-25 | 2020-02-25 | Ceramic substrate for UVLED packaging |
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| CN (1) | CN211654853U (en) |
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- 2020-02-25 CN CN202020205570.5U patent/CN211654853U/en active Active
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