TWI581697B - Method for manufacturing heat dissipation structure of ceramic substrate - Google Patents

Description

Method for manufacturing ceramic substrate heat dissipation structure

The invention relates to a method for manufacturing a heat dissipation structure of a ceramic substrate, in particular to a method for manufacturing a heat dissipation structure of a ceramic substrate having good heat dissipation.

Regardless of whether the LED heat sink substrate or the passive component substrate is basically made of ceramic as a base and the conductor wire is formed thereon, generally, since the ceramic substrate has high mechanical strength, in addition to the component, it can also serve as a supporting member. Use; and because of its smooth surface, good processability, precision size, and multi-layer, high insulation breakdown voltage, stable performance under high temperature and high humidity conditions, reliability, high thermal conductivity and excellent heat resistance It has good chemical stability, easy metallization, strong adhesion between circuit patterns and ceramic substrates, and has important characteristics such as easy material acquisition and easy manufacturing, making the ceramic heat dissipation substrate widely used.

The main function of the LED heat dissipating substrate is to use the heat dissipating substrate material to have better thermal conductivity, and effectively transfer heat energy from the LED die to the system to reduce the temperature of the LED die, increase the luminous efficiency and avoid heat. Accumulation causes damage to the product and extends LED life. The LED heat sink substrate is mainly divided into two major categories: system board and LED die board.

The system board is mainly used as the LED terminal cooling system to conduct thermal energy to the heat sink, the outer casing or the most terminal in the atmosphere. In recent years, the production technology of printed circuit boards (PCBs) has been very mature. The system boards of early LED products are mostly PCB-based. However, with the increasing demand for high-power LEDs, the heat dissipation capability of PCB materials is limited, making it unusable. In order to improve the heat dissipation of high-power LEDs, high-power products have recently developed a high thermal conductivity aluminum substrate (MCPCB), which has a superior dispersion of metal materials. The thermal characteristics can achieve the purpose of heat dissipation of high-power products. However, with the continuous development of LED brightness and performance requirements, although the system board can effectively dissipate the heat generated by the LED chip to the atmosphere, the thermal energy generated by the LED die cannot be effectively transmitted from the die substrate to the system. Circuit board.

The LED die substrate is mainly used as a medium for deriving thermal energy between the LED die and the system board, and is combined with the LED die by one of wire bonding, eutectic or flip chip. Based on heat dissipation considerations, LED die substrates on the market are mainly ceramic substrates. Common ceramic substrate structures are low temperature co-fired multilayer ceramic substrates (LTCC), high temperature co-fired multilayer ceramic substrates (HTCC), and direct copper-clad substrates ( DBC), as well as direct sputter copper substrates (DPC).

The first low-temperature co-fired ceramic substrate process is to use a alumina powder mixed glass material and an adhesive to make a slurry, dry and then drill, and use a screen printing method to fill holes and form a line pattern, and finally the multilayer line Sintering molding, therefore, the screen made by the screen printing method is prone to rough circuit and inaccurate alignment due to the problem of screen-laid net, and the ceramic substrate structure formed by the process has insufficient conductivity, and the thermal conductivity is about 3- 6, it is not applicable to today's product miniaturization, precise needs.

The second high-temperature co-fired ceramic substrate is the same as the low-temperature co-fired ceramic substrate in most processes. However, the high-temperature co-fired ceramic substrate is not added with a glass material, so a high temperature of 1300 to 1600 ° C is required for the sintering temperature, and a higher sintering temperature is required. Therefore, the metal material of the selected circuit is limited. Generally, metal materials such as tungsten, molybdenum, manganese, etc., which have a high melting point, not only have a misalignment of the screen printing line, but also have poor conductivity. problem.

The third direct-bonding copper substrate (DBC) is formed by coating a ceramic substrate with copper metal, and the ceramic substrate and the copper eutectic melt are used at a high temperature of 1065 to 1085 ° C, and finally, a molding line is formed by etching. The manufacturing cost is high, and there is a problem of microbubbles between the ceramic substrate and the copper metal.

The fourth direct copper plating substrate (DPC) is first subjected to a pre-treatment process, and then a copper metal layer is deposited by a sputtering method, and then the photoresist is coated, and an exposure and development process is performed to form a circuit, and finally, a plating process is performed. Or the plating method to thicken the circuit layer, although its high thermal conductivity with a thermal conductivity of about 20-170 can be applied to high-power products, but its high cost characteristics limit its applicability.

In view of the rapid development of the above-mentioned ceramic substrate heat dissipation structure, in response to the rapid development of the electronics industry, in recent years, the related industries have been seeking to develop a better heat dissipation method for high-power LEDs to meet the heat dissipation requirements of electronic components, as shown in FIG. A modified ceramic substrate heat dissipation structure manufacturing method comprising the steps of: (1) forming one or more through holes in a strip layer, and step (2) providing an intermediate layer on a first surface of the strip layer, step (3) A vacuum liner is provided on the intermediate layer, and step (4) fills the through holes using a printer vacuum table.

As shown in FIG. 2, another modified ceramic substrate heat dissipation structure manufacturing method comprises the steps of (1) coloring step 101, step (2) drilling step 102: using a focused high temperature laser, and gas from the back surface of the ceramic substrate. The drilling method is used to form a small aperture on the front side of the line; Step (3) Cleaning step 103: removing the metal and organic substances remaining on the surface of the substrate by using an organic solvent, and then cleaning the substrate to ensure that there are no other substrates on the substrate that may affect subsequent processes. Substance existence; step (4) conductive copper layer deposition step 104: depositing a conductive layer of copper (Cu) on the substrate by vertical continuous sputtering, and adding an interposer (TiCu alloy, Ti, TiW alloy or NiCr alloy) Between the copper layer and the substrate to increase the line adhesion; step (5) yellow lithography imaging step 105: using a negative dry film photoresist to cover the first layer of metal, and then according to the thickness requirements of the second layer of metal, Select the thickness suitable for the dry film photoresist, fill in the second metal line with appropriate heating temperature, pressure, bonding speed and dry film tension; Step (6) Electroforming filling step 106: Using electroplating Depositing over the seed layer covered by the barrier to plate a thick copper line and filling the via hole; step (7) stripping step 107: using a strong alkali type solution agent by a horizontal stripping line or a immersion stripping tank Go on Film; step (8) etching step 108: removing the titanium-copper alloy layer by a strong acid type agent by wet etching, or spraying a strong acid agent to chemically react with the surface of the titanium-copper alloy to remove the conductive layer, and then performing cleaning; 9) a rubbing step 109: flattening the surface of the substrate, followed by cleaning; step (10) insulating layer protective printing step 110: using a thermosetting solder resist as the surface insulating layer; and step (11) surface modifying step 111: The copper line is plated with a metal layer of silver, nickel gold or nickel palladium to increase the surface solder strength and wire strength, thereby increasing the stability of the product.

However, the first conventional technique has the problem of web alignment by filling the through hole by screen printing. The second conventional technique is to deposit a metal layer by electroplating and then attach a dry film, and then form a thickening by electroforming. The metal layer requires a complicated process to complete the heat dissipation structure of the ceramic substrate, so that it has a high process cost.

In view of the above, it is necessary to provide a method for manufacturing a heat dissipation structure of a ceramic substrate which can achieve good heat dissipation by a simple and low-cost process.

The main object of the present invention is to provide a manufacturing method suitable for various heat dissipation structures of ceramic substrates, which utilizes electroforming heat dissipation to increase the thermal conductivity of the ceramic substrate to about 370-400, greatly improve heat dissipation of heat conduction, and improve luminous efficiency of the LED. A variety of different types of ceramic substrates are achieved to achieve good heat dissipation, greatly reducing heat accumulation inside the product and causing thermal damage.

A secondary object of the present invention is to provide a method for manufacturing a heat dissipation structure for a ceramic substrate, in addition to having a high heat dissipation degree, the manufacturing method thereof has the characteristics of simple process, and can achieve the purpose of reducing cost, thereby greatly improving industrial applicability.

To achieve the foregoing object, a method for manufacturing a heat dissipation structure for a ceramic substrate according to the present invention comprises: (A) providing a ceramic substrate subjected to perforation treatment, wherein the ceramic substrate has at least one through hole penetrating from the top surface to the bottom surface; (B) a metal material is adjacent to a surface of the ceramic substrate, and the metal material is Covering one end of the through hole; (C) depositing metal to the through hole by electroforming, forming a metal post connected to the metal material inside the through hole; (D) removing the metal material, allowing the metal column and The ceramic substrates collectively form a ceramic heat sink substrate.

The perforated ceramic substrate can be formed by a low temperature co-firing process, and the perforation treatment can be performed through a hole having a perforated mold.

The perforation treatment may also be one of processing methods of ultrasonic processing, electron beam processing, laser processing, etching into holes, and sandblasting into holes.

The above metal material is removed by one of a grinding machine, an abrasive paper, a polishing tape, an abrasive sheet, and a polishing liquid.

The method for fabricating a heat dissipation structure for a ceramic substrate further comprises the step of: adding a metal protective layer to the surface of the metal pillar by electroplating or electroless deposition.

The metal protective layer is composed of one of a chemical silver layer, a tin and a tin alloy layer, or a single layer of a nickel plating layer, an electroplated gold layer or an electroplated silver layer, or a single metal layer. A composite metal layer is formed by depositing one of a chemical gold layer or a chemical silver layer over the electroless nickel layer, or plating a gold layer or a silver layer over an electroplated nickel layer to form a composite metal layer.

In the first embodiment, the step (C) deposits metal into the through hole by electroforming, and forms a metal post connected to the metal material inside the through hole. When the height of the deposited metal is smaller than the height of the through hole, At least one recess may be formed between the metal post and the ceramic substrate.

In the second embodiment, the step (C) deposits metal into the through hole by electroforming, and forms a metal post connected to the metal material inside the through hole. When the height of the deposited metal is equal to the height of the through hole, The metal post and the ceramic substrate will together form a plane.

In the third embodiment, the step (C) deposits metal into the through hole by electroforming, and forms a metal post connected to the metal material inside the through hole. When the height of the deposited metal is greater than the height of the through hole, The metal post forms at least one convex portion on the ceramic substrate, and then the convex portion is polished and removed, so that the surface of the metal post and the ceramic substrate are mutually aligned to form a coplanar surface.

In a fourth embodiment, a method for manufacturing a heat dissipation structure for a ceramic substrate, comprising: (A) providing a ceramic substrate subjected to a perforation process, wherein the ceramic substrate has at least one through hole penetrating from a top surface to a bottom surface; (B) a metal material is adjacent to a surface of the ceramic substrate, and the metal material is covered on one end of the through hole; (C) a metal is deposited by electroforming to the through hole, and a metal material is formed inside the through hole a metal pillar connected; (D) removing the metal material, and the metal pillar and the ceramic substrate together form a ceramic heat dissipation substrate; (E) adding a metal conductive layer to the surface of the metal pillar and the ceramic substrate by evaporation or sputtering deposition (F) forming a wiring pattern on the metal conductive layer by a film (etching resistant film), an exposure developing process, and an etching process; (G) stripping the etching resistant film.

The ceramic substrate subjected to the perforation treatment can be formed by a low temperature co-firing process, The perforation process can be made into a hole through a mold having perforations.

The perforation treatment may also be one of processing methods of ultrasonic processing, electron beam processing, laser processing, etching into holes, and sandblasting into holes.

The above metal material is removed by one of a grinding machine, an abrasive paper, a polishing tape, an abrasive sheet, and a polishing liquid.

The method for fabricating a heat dissipation structure for a ceramic substrate further comprises the step of: adding a metal protective layer to the surface of the metal pillar by electroplating or electroless deposition.

The metal protective layer is composed of one of a chemical silver layer, a tin and a tin alloy layer, or a single layer of a nickel plating layer, an electroplated gold layer or an electroplated silver layer, or a single metal layer. A composite metal layer is formed by depositing one of a chemical gold layer or a chemical silver layer over the electroless nickel layer, or plating a gold layer or a silver layer over an electroplated nickel layer to form a composite metal layer.

In an embodiment, the step (C) deposits metal into the through hole by electroforming, and forms a metal pillar connected to the metal material inside the through hole. When the height of the deposited metal is less than the height of the through hole, the metal At least one recess may be formed between the post and the ceramic substrate.

In another embodiment, the step (C) deposits metal into the through hole by electroforming, and forms a metal pillar connected to the metal material inside the through hole. When the height of the deposited metal is equal to the height of the through hole, the above The metal post and the ceramic substrate will together form a plane.

In still another embodiment, the step (C) deposits metal into the through hole by electroforming, and forms a metal pillar connected to the metal material inside the through hole. When the height of the deposited metal is greater than the height of the through hole, The metal post forms at least one convex portion on the ceramic substrate, and then the convex portion is polished and removed, so that the surface of the metal post and the ceramic substrate are mutually aligned to form a coplanar surface.

The invention is characterized in that the ceramic substrate is formed into a plurality of through holes by electroforming Filling and depositing the inside of the through hole to form a solid solid metal column, and improving the heat dissipation structure of the ceramic substrate of the prior art by forming a metal thin film layer inside the through hole by sputtering and electroplating means not only simplifying the process, but also simplifying the process. It can also reduce production costs and improve industrial applicability. In addition, various ceramic substrates have good heat dissipation by uncovering the solid metal pillar structure.

(known)

101‧‧‧Coloring steps

102‧‧‧ drilling steps

103‧‧‧ cleaning steps

104‧‧‧ Conductive copper layer deposition step

105‧‧‧Yellow lithography imaging steps

106‧‧‧Electrical casting and filling steps

107‧‧‧Striping step

108‧‧‧ etching step

109‧‧‧Brushing steps

110‧‧‧Insulation protection printing steps

111‧‧‧ Surface modification steps

(this invention)

20‧‧‧Ceramic substrate

201‧‧‧ mixed powder

30‧‧‧through holes

40‧‧‧Metal materials

50‧‧‧Metal column

60‧‧‧ metal protective layer

71‧‧‧Next mold

72‧‧‧Upper mold

80‧‧‧Metal conductive layer

90‧‧‧ film

1 is a flow chart of a conventional ceramic substrate heat dissipation structure manufacturing method; FIG. 2 is a flow chart of another conventional ceramic substrate heat dissipation structure manufacturing method; and FIG. 3 is a flow chart of a ceramic substrate heat dissipation structure manufacturing method according to the present invention; FIG. 5 is a schematic structural view of a second embodiment of a method for manufacturing a heat dissipation structure of a ceramic substrate according to the present invention; FIG. 6 is a schematic view showing a second embodiment of a method for manufacturing a heat dissipation structure of a ceramic substrate according to the present invention; FIG. 7-8 is a schematic structural view of a fourth embodiment of a method for manufacturing a heat dissipation structure of a ceramic substrate according to the present invention; and FIG. 9-10 is a schematic structural view of a fifth embodiment of a method for manufacturing a heat dissipation structure of a ceramic substrate according to the present invention; The figure is a schematic structural view of a sixth embodiment of a method for manufacturing a heat dissipation structure of a ceramic substrate of the present invention; and FIG. 13 is a schematic view showing the application of a method for manufacturing a heat dissipation structure of a ceramic substrate of the present invention.

For a better understanding and understanding of the structure, the use and the features of the present invention, the preferred embodiments are described in detail with reference to the drawings as follows: First, please refer to FIG. 3 and FIG. A method for manufacturing a heat dissipation structure for a ceramic substrate according to a first embodiment of the present invention includes:

(A) providing a ceramic substrate 20 subjected to a perforation process, wherein the ceramic substrate 20 has at least one through hole 30 penetrating from the top surface to the bottom surface; the ceramic substrate 20 may be aluminum oxide, aluminum nitride, tantalum carbide or hafnium oxide. a ceramic material of the zinc oxide substrate or the sapphire substrate 10, wherein the ceramic substrate 20 is formed by a perforation process to form a ceramic substrate 20 having a plurality of through holes 30, and the perforation processing can be performed as ultrasonic processing or electron beam One of the processing methods of processing, water jet processing, laser processing, etching into holes, and sandblasting into holes, so that the through holes 30 become one of the through holes 30 of a circular hole, a square hole or other geometric shape.

(B) a metal material 40 is adjacent to a surface of the ceramic substrate 20, the metal material 40 may be one of the metal substrate 10 or the metal foil, and the metal material 40 is covered at one end of the through hole 30; The ceramic substrate 20 can be disposed above the metal material 40 by one of sandwiching, gluing, and laminating the metal material 40 adjacent to the ceramic substrate 20.

(C) depositing metal into the through hole 30 by electroforming, forming a metal pillar 50 connected to the metal material 40 inside the through hole 30; the electroforming process is a highly efficient and precise molding technique, and is deposited by electroplating. The principle, and by the externally supplied electric energy, the mixed solution containing metal ions and other additives is subjected to an electrochemical redox reaction on the surface of the cathode or the anode to form a metal to be deposited on the surface of the object, the present invention The metal is deposited in the through hole 30 by electroforming. In the first embodiment, when the height of the deposited metal is less than the height of the through hole 30, at least one concave portion is formed between the metal post 50 and the ceramic substrate 20. Further, the above electroformed deposition metal may be copper (Cu) or a copper alloy.

(D) removing the metal material 40, and the metal pillar 50 and the ceramic substrate 20 together form a ceramic heat dissipation substrate, and the removing the metal material 40 can polish the metal material 40 by grinding. The ceramic substrate 20 and the metal post 50 are exposed to complete removal, and the polishing may be one of a grinder, an abrasive paper, a polishing tape, an abrasive sheet, and a polishing liquid.

Finally, a metal protection layer 60 is formed on the surface of the metal pillar 50, wherein the metal barrier layer 60 is formed on both sides of the metal pillar 50 by chemical plating or electroplating. The metal shield layer 60 can be chemistry by a single metal layer. One of the silver layer, the tin and the tin alloy layer or one of the electroplated nickel layer, the electroplated gold layer, and the electroplated silver layer constitutes a single metal layer, or a chemical gold layer or chemical silver may be deposited over the chemical nickel layer. One of the layers constitutes a composite metal layer, or one of a gold layer or a silver layer is plated over an electroplated nickel layer to form one of the composite metal layers.

The electroplating process partially forms a material layer on the plated part having the catalytic surface by using the principle of redox in the absence of electrification; and the electroplating process uses the principle of electrolysis to form a surface on the electric conductor. Method of metal layer.

The above electroplating process is a method of coating a conductor with a layer of metal by the principle of electrolysis.

Referring to FIG. 5, in a preferred second embodiment, the steps (A), (B), (D), and forming a metal shield 60 are the same as in the first embodiment, only in the step ( C) When a solid metal pillar 50 is deposited by electroforming, the height of the metal pillar 50 is consistent with the height of the through hole 30, so that the solid metal pillar 50 and the ceramic substrate 20 together form a plane.

Referring to FIG. 6, in another third embodiment, steps (A), (B), (D), and forming a metal shield 60 are the same as in the first embodiment, only in step (C). When the solid metal pillar 50 is deposited by electroforming, the height of the metal pillar 50 is greater than the height of the through hole 30, so that the metal pillar 50 protrudes above the ceramic substrate 20 to form at least one convex portion. The convex part can be borrowed The metal pillars 50 are polished to have the same level as the surface of the ceramic substrate 20 and are aligned with each other to form a common plane.

In still another fourth embodiment, as shown in FIGS. 7-8, the ceramic substrate 20 can be formed by a conventional low-temperature co-firing process, in which a mixed powder 201 is first placed in a lower mold 71 having a cavity. The mixed powder 201 is formed by mixing aluminum oxide powder with a glass material and an adhesive, and is covered with an upper mold 72 to apply pressure to the mixed powder 201, so that the mixed powder 201 is compacted to form a dense structure, and then After the compacted mixed powder 201 is taken out and then sintered, a ceramic substrate 20 having through holes 30 can be directly formed. In another possible embodiment, the mixed powder 201 is dried, punched into a hole and sintered to form a The ceramic substrate 20 of the through-hole 30 can be subjected to the perforation process without the laser drilling by the above-described method, and the process cost can be greatly reduced.

In the fourth embodiment, the step (A) is to form a ceramic substrate 20 having through-holes 30 by a low-temperature co-firing process and a perforation process, and the remaining subsequent steps (B), (C), and (D) are the same as the above embodiment. I will not repeat them here.

In another preferred fifth embodiment, please refer to FIG. 9-10. Steps (A)-(D) are the same as the previous embodiment, and are not described here. However, after step (D), Further, a metal conductive layer 80 is formed on the metal pillar 50 and the ceramic substrate 20 by physical vapor deposition, and the metal conductive layer 80 and the heat dissipation structure of the ceramic substrate 20 are electrically connected; wherein the physical vapor deposition may be evaporation or Any one of the methods of sputtering, and the metal conductive layer 80 is formed of a highly conductive metal material 40, wherein the metal conductive layer 80 may be a 10-1000 nm nickel layer or a titanium layer and then plated with a 10-2000 nm copper layer.

The circuit pattern is formed by using the lamination film 90 (anti-etching film 90), the exposure developing process, and the etching process; wherein, the lamination film 90 process is to adhere a pair of purple on the surface of the metal conductive layer 80 on the substrate on which the circuit pattern is to be formed. The film 90 of the external reaction, the film 90 may be a dry film 90 of a polymerizable resin or a wet film 90, which is mainly used for protecting the wiring pattern from being etched away after polymerization.

The exposed part of the exposure and development process is that after the circuit pattern is made into a genuine mask, it is first positioned and flattened on the metal conductive layer 80 of the film 90, and then vacuumed, pressed, and irradiated by the exposure machine. carry out. The film 90 irradiated with ultraviolet rays will be polymerized, and the film 90 is blocked by the mask to be blocked by ultraviolet rays, and polymerization will not occur.

In the developing part of the exposure developing process, the film 90 which is not polymerized is partially removed by the developer, and the line to be retained is visually and physically peeled off, and the circuit formed by the process step has The characteristics of straightness and flatness.

The etching process is performed by etching with an etching solution to remove the portion of the surface of the metal conductive layer 80 that is not blocked by the film 90.

Finally, the anti-etching film 90 is stripped, and a metal protective layer 60 made of an anti-oxidation metal is additionally plated or plated over the wiring pattern of the metal conductive layer 80.

In another feasible sixth embodiment, referring to FIG. 11 and FIG. 12, the step (A) of the present invention provides a ceramic substrate 20 which has been subjected to a perforation process, and the ceramic substrate 20 has at least one surface penetrating from the top surface to the bottom surface. The through hole 30 may be etched into a hole, and a pressing film 90 (etching resistant film 90) is first disposed on the surface of the ceramic substrate 20, and the ceramic substrate 20 is formed by the exposure developing and etching processes. The through hole 30 is formed, and the anti-etching film 90 is stripped, and the remaining steps (B), (C), and (D) are the same as the other embodiments, and will not be further described herein.

Please refer to FIG. 13 for an industrial application example, the left through hole 30 is set as an anode, the right through hole 30 is set as a cathode, and a die is arranged above the intermediate through hole 30 for subsequent wire bonding technology (wire Bonding) A packaging process that connects the die to the junction on the ceramic substrate.

In summary, the present invention is characterized in that a through hole 30 that is electrically connected to the lower side of the ceramic substrate 20 is formed by abutting the metal material 40 and the ceramic substrate 20, and then is electrically formed into the through hole 30 by an electroforming process. A solid metal pillar 50 is formed. The solid metal pillar 50 has a relatively thick structure compared with the metallized film of the prior art in the through hole. Therefore, it has a superior conductivity and a conventional nitrogen. Compared with the aluminum heat dissipation substrate, the conventional aluminum nitride heat dissipation structure has a thermal conductivity of 150-170 W/mK and has high cost, and the thermal conductivity of the aluminum substrate heat dissipation structure is 16-24 W/mK, and the present invention The thermal conductivity of the heat dissipation structure of the ceramic substrate is about 370-400 W/mK. Therefore, the present invention can greatly improve the thermal conductivity of the ceramic substrate 20 in the vertical direction by the simple and low-cost process, and the heat energy generated by the component is effectively Conducted out, it has an excellent heat dissipation and meets market demand.

The above embodiments are intended to be illustrative only, and are not intended to limit the scope of the present invention. It is included in the scope of the following patent application.

Claims (22)

A method for manufacturing a heat dissipation structure for a ceramic substrate, comprising: (A) providing a ceramic substrate subjected to perforation treatment, wherein the ceramic substrate has at least one through hole penetrating from a top surface to a bottom surface; (B) a metal material adjacent to the above a surface of the ceramic substrate, and the metal material is covered on one end of the through hole; (C) electroforming a metal to the through hole, and forming a metal pillar connected to the metal material portion in the through hole (D) removing the above metal material, and the metal pillar and the ceramic substrate together form a ceramic heat dissipation substrate. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 1, further comprising adding a metal barrier layer to the surface of the metal pillar by electroplating or electroless plating. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 2, wherein the metal protection layer is formed of one of a chemical silver layer, a tin and a tin alloy layer to form a single metal layer or an electroplated nickel layer or a gold plating plate. One of the layers, the electroplated silver layer, constitutes a single metal layer. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 2, wherein the metal protection layer is formed by depositing a chemical gold layer or a chemical silver layer over a chemical nickel layer to form a composite metal layer, or One of a gold layer or a silver layer is plated over an electroplated nickel layer to form a composite metal layer. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 1, wherein the ceramic substrate subjected to the perforation treatment can be formed by a low-temperature co-firing process. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 5, wherein the perforation treatment is performed through a hole having a perforation. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 1, wherein the perforation treatment can be performed by ultrasonic processing, electron beam processing, water jet processing, laser processing, etching into holes, and sandblasting into holes. One of the processing methods. The method for producing a heat dissipation structure for a ceramic substrate according to the first aspect of the invention, wherein the metal material is removed by one of a polishing method, a polishing paper, a polishing tape, an abrasive sheet, and a polishing liquid. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 1, wherein at least one recess is formed between the metal post and the ceramic substrate when the height of the deposited metal is smaller than the height of the through hole. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 1, wherein the metal pillar and the ceramic substrate together form a plane when the height of the deposition metal is equal to the height of the through hole. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 1, wherein when the height of the deposited metal is greater than the height of the through hole, the metal post forms at least one convex portion on the ceramic substrate, and then the convex portion is ground. The metal pillars are removed from the surface of the ceramic substrate to form a coplanar surface. A method for manufacturing a heat dissipation structure for a ceramic substrate, comprising: (A) providing a ceramic substrate subjected to perforation treatment; the ceramic substrate having at least one through hole penetrating from a top surface to a bottom surface; (B) a metal material adjacent to the ceramic a surface of the substrate, and the metal material is covered at one end of the through hole; (C) depositing metal to the through hole by electroforming, so that a metal pillar connected to the partial region of the metal material is formed inside the through hole; (D) removing the metal material, and the metal pillar and the ceramic substrate together form a ceramic heat dissipation substrate; (E) adding a metal conductive layer to the surface of the metal pillar and the ceramic substrate by evaporation or sputtering; (F) The wiring pattern is formed on the metal conductive layer by a film (etching resistant film), an exposure developing process, and an etching process; (G) the above etching resist film is peeled off. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 12, further comprising adding a metal protective layer to the surface of the metal pillar by electroplating or electroless plating. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 13, wherein the metal protection layer is formed of one of a chemical silver layer, a tin and a tin alloy layer to form a single metal layer or an electroplated nickel layer or a gold plating plate. One of the layers, the electroplated silver layer, constitutes a single metal layer. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 13, wherein the metal protection layer is formed by depositing a chemical gold layer or a chemical silver layer over a chemical nickel layer to form a composite metal layer, or One of a gold layer or a silver layer is plated over an electroplated nickel layer to form a composite metal layer. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 12, wherein the ceramic substrate subjected to the perforation treatment can be formed by a low-temperature co-firing process. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 16, wherein the perforation treatment is performed through a hole having a perforation. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 12, wherein the perforation treatment can be performed as ultrasonic processing, electron beam processing, water jet processing, laser processing, etching into holes, and sandblasting into holes. One of the processing methods. The method for producing a heat dissipation structure for a ceramic substrate according to claim 12, wherein the metal material is removed by one of a grinding machine, an abrasive paper, a polishing tape, an abrasive sheet, and a polishing liquid. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 12, wherein at least one recess is formed between the metal post and the ceramic substrate when the height of the deposited metal is less than the height of the through hole. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 12, wherein the metal pillar and the ceramic substrate together form a plane when the height of the deposited metal is equal to the height of the through hole. The method for manufacturing a heat dissipation structure for a ceramic substrate according to claim 12, wherein, when the height of the deposited metal is greater than the height of the through hole, the metal pillar forms at least one convex portion on the ceramic substrate, and then grinds the convex portion The metal pillars are removed from the surface of the ceramic substrate to form a coplanar surface.