CN108807189A - Rectifier bridge device packaging technology - Google Patents
Rectifier bridge device packaging technology Download PDFInfo
- Publication number
- CN108807189A CN108807189A CN201810644383.4A CN201810644383A CN108807189A CN 108807189 A CN108807189 A CN 108807189A CN 201810644383 A CN201810644383 A CN 201810644383A CN 108807189 A CN108807189 A CN 108807189A
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- bridge device
- rectifier bridge
- rectifier
- packaging technology
- conductive layer
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- 238000012536 packaging technology Methods 0.000 title claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 31
- 238000009413 insulation Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000001259 photo etching Methods 0.000 claims abstract description 11
- 238000007747 plating Methods 0.000 claims description 7
- 238000005476 soldering Methods 0.000 claims description 7
- 238000004026 adhesive bonding Methods 0.000 claims description 6
- 230000005496 eutectics Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 26
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 230000010412 perfusion Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Rectifiers (AREA)
Abstract
The invention discloses a kind of rectifier bridge device packaging technologies, include the following steps, conductive layer is prepared on insulation board；Remove Excess conductive layer；Rectifier diode is fixed on the electrically conductive；Thickness metal derby identical with rectifier diode is fixed on the electrically conductive；The height of the filling insulation encapsulating material between rectifier diode and metal derby, control insulation encapsulating material is slightly below rectifier diode and metal derby；Photoetching is carried out, the top electrodes of rectifier diode and the top of metal derby are exposed.The package thickness of rectifier bridge device can be controlled between 0.5~0.6 millimeter and can be produced in batches by the rectifier bridge device packaging technology of embodiment of the present invention, realize the further precise treatment of rectifier bridge device；Meanwhile present embodiment process is simple, improves the processing efficiency of rectifier bridge device.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of rectifier bridge device packaging technologies.
Background technology
In the related art, the encapsulation operation of rectifier bridge mainly has following two methods：
(1) rectifier diode chip is welded on multiple layer metal holder using solid-state weld tabs, then is carried out with epoxy resin
Encapsulating, by multiple layer metal holder extraction electrode, realizes the device function of rectifier bridge.The rectifier bridge thickness of this method production all exists
It is 1 millimeter or more, most of all between 1.3~1.7 millimeters.
(2) use single layer archipelago metallic support as carrier, the bottom electrode of rectifier diode chip is connected by soldering paste
On a Metal Substrate island, rectifier diode chip top electrodes are connected to other Metal Substrate islands by metal wire technique, so
It is encapsulated again with epoxy resin afterwards, using the bared end extraction electrode of single-layer metal holder, realizes the device function of rectifier bridge.
This method production procedure is various, complex process, and the rectifier bridge thickness of detector of production is most of all 1.0 all at 0.9 millimeter or more
Between~1.3 millimeters.
The rectifier bridge thickness of above-mentioned two kinds of encapsulation operation methods manufacture is larger, meanwhile, complicated for operation, process is numerous, increases
The packaging cost of rectifier bridge is added.
Invention content
A kind of rectifier bridge device packaging technology that embodiment of the present invention provides, includes the following steps：
(1) conductive layer is prepared on insulation board；
(2) Excess conductive layer is removed；
(3) rectifier diode is fixed on the conductive layer；
(4) thickness metal derby identical with the rectifier diode is fixed on the conductive layer；
(5) the filling insulation encapsulating material between the rectifier diode and the metal derby controls the insulation encapsulating
The height of material is slightly below the rectifier diode and the metal derby；
(6) photoetching is carried out, the top of the top electrodes and the metal derby of the rectifier diode is exposed.
The rectifier bridge device packaging technology of embodiment of the present invention can control the package thickness of rectifier bridge device 0.5
It between~0.6 millimeter and can be produced in batches, realize the further precise treatment of rectifier bridge device；Meanwhile this embodiment party
Formula process is simple, improves the processing efficiency of rectifier bridge device.
In some embodiments, the thickness of the insulation board is less than 0.5 millimeter.
In some embodiments, the thickness of the insulation board is 0.3 millimeter.
In some embodiments, the method that conductive layer is prepared in step (1) includes evaporation, sputtering or plating.
In some embodiments, the method for removal Excess conductive layer includes photoetching or etching in step (2).
In some embodiments, it includes eutectic that rectifier diode is fixed on to the mode of the conductive layer in step (3)
Die bond, soldering paste die bond or conductive gluing knot.
In some embodiments, thickness metal derby identical with the rectifier diode is fixed on institute in step (4)
It includes eutectic die bond, soldering paste die bond or conductive gluing knot to state the mode on conductive layer.
In some embodiments, the encapsulating material that insulate described in step (5) includes liquid dielectric encapsulating material.
In some embodiments, further comprising the steps of before carrying out lithography operations in step (6)：
Photosensitive insulating material is coated on the surface of rectifier bridge device.
The additional aspect and advantage of embodiment of the present invention will be set forth in part in the description, partly will be from following
Become apparent in description, or practice through the invention is recognized.
Description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention is from combining in description of the following accompanying drawings to embodiment by change
It obtains obviously and is readily appreciated that, wherein：
Fig. 1 is the flow diagram of the rectifier bridge device packaging technology of embodiment of the present invention；
After the completion of the step of Fig. 2 and Fig. 3 is the rectifier bridge device packaging technology of embodiment of the present invention (1) and step (2)
Structural schematic diagram；
After the completion of the step of Fig. 4 and Fig. 5 is the rectifier bridge device packaging technology of embodiment of the present invention (3) and step (4)
Structural schematic diagram；
Structural representation after the completion of the step of Fig. 6 and Fig. 7 is the rectifier bridge device packaging technology of embodiment of the present invention (5)
Figure；
Fig. 8 is the electrode schematic diagram of the rectifier bridge device of embodiment of the present invention；
Fig. 9 is the planar structure schematic diagram of the rectifier bridge device of embodiment of the present invention.
Specific implementation mode
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term "center", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, do not indicate or imply the indicated device or element must have a particular orientation, with spy
Fixed azimuth configuration and operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are only used for
Purpose is described, relative importance is not understood to indicate or imply or implicitly indicates the quantity of indicated technical characteristic.
" first " is defined as a result, the feature of " second " can explicitly or implicitly include one or more feature.?
In description of the invention, the meaning of " plurality " is two or more, unless otherwise specifically defined.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
Can also be to be electrically connected or can mutually communicate to be mechanical connection；It can be directly connected, it can also be by between intermediary
It connects connected, can be the interaction relationship of the connection or two elements inside two elements.For the ordinary skill of this field
For personnel, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the description of the present invention unless specifically defined or limited otherwise, fisrt feature in the "upper" of second feature or
"lower" may include that the first and second features are in direct contact, can also include the first and second features not be in direct contact but
Pass through the other characterisation contact between them.Moreover, fisrt feature second feature " on ", " top " and " above " include
Fisrt feature is right over second feature and oblique upper, or is merely representative of fisrt feature level height and is higher than second feature.First
Feature second feature " under ", " lower section " and " below " include fisrt feature immediately below second feature and obliquely downward, or only
Only indicate that fisrt feature level height is less than second feature.
Following disclosure provides many different embodiments or example is used for realizing the different structure of the present invention.In order to
Simplify disclosure of the invention, hereinafter the component of specific examples and setting are described.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.In addition, the present invention provides various specific techniques and material example, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
Please refer to Fig.1-Fig. 9, a kind of rectifier bridge device packaging technology that embodiment of the present invention provides, including following step
Suddenly：
(1) conductive layer 20 is prepared on insulation board 10；
(2) removal Excess conductive layer 20；
(3) rectifier diode 30 is fixed on conductive layer 20；
(4) thickness metal derby 40 identical with rectifier diode is fixed on the electrically conductive；
(5) the filling insulation encapsulating material 50 between rectifier diode 30 and metal derby 40, control insulation encapsulating material 50
Height be slightly below rectifier diode 30 and metal derby 40；
(6) photoetching is carried out, the top of the top electrodes and metal derby 40 of rectifier diode 30 is exposed.
The rectifier bridge device packaging technology of embodiment of the present invention can control the package thickness of rectifier bridge device 100
It between 0.5~0.6 millimeter and can be produced in batches, realize the further precise treatment of rectifier bridge device 100；Meanwhile this
Embodiment process is simple, improves the processing efficiency of rectifier bridge device 100.
Specifically, 100 packaging technology of rectifier bridge device in embodiment of the present invention is substantially only needed by preparing metal
5 processes such as layer, chemical wet etching, die bond, insulating layer perfusion, photosensitive insulating layer photoetching, greatly reduce operation complexity,
Reduce the packaging cost of rectifier bridge device 100.In some embodiments, the thickness of insulation board 10 is less than 0.5 millimeter.
In some embodiments, the thickness of insulation board 10 is 0.3 millimeter.
In this way, the insulation board 10 of 0.3 mm of thickness is selected, it can be by the thickness control of finished product rectifier bridge in 0.5~0.6 milli
Between rice and realize batch production.
In some embodiments, the method that conductive layer 20 is prepared in step (1) includes evaporation, sputtering or plating.
Specifically, evaporation prepares conductive layer and refers in the plate surface conductions such as deposited metal by the way of evaporation that insulate
Material forms conductive layer.Sputtering method prepares conductive layer and refers to that depositing conductive electrode in substrate using magnetron sputtering method forms
Conductive layer.Plating rule refers to plating the conductive materials such as metal, formation conductive layer by electric plating method in insulation plate surface.
In some embodiments, the method for removal Excess conductive layer 20 includes photoetching or etching in step (2).
Specifically, photolithography method refer to illumination effect under, will be on mask plate by photoresist (also known as photoresist)
Pattern transfer to insulation board on conductive layer on technology, the shape to form figure, size can be accurately controlled.Etch skill
Art is to remove the part that film is not covered by photoresist using the chemical reaction carried out between specific solution and film, and reach
A kind of technology of the purpose of etching, the etching operation period is short, will not the object to be operated complex degree of structure influence operating efficiency.
In some embodiments, the mode that rectifier diode is fixed on to conductive layer in step (3) include eutectic die bond,
Soldering paste die bond or conductive gluing knot.
In some embodiments, thickness metal derby identical with rectifier diode is fixed on conductive layer in step (4)
On mode include eutectic die bond, soldering paste die bond or conductive gluing knot.
In some embodiments, insulation encapsulating material includes liquid dielectric encapsulating material in step (5).
In some embodiments, further comprising the steps of before carrying out lithography operations in step (6)：
Photosensitive insulating material is coated on the surface of rectifier bridge device.
In this way, lithography operations process will not relate to carry out the field of photoetching.
To sum up, the thickness for the insulation board that the rectifier bridge device in embodiment of the present invention uses is 0.3 millimeter；On insulation board
The thickness of the conductive layer of preparation is 0.02 millimeter；Rectifier diode is identical with the height of metal derby, is 0.25 millimeter；Insulation encapsulating
It is 0.26 millimeter that thickness, which is arranged on insulation board, in material；When finally carrying out lithography operations, in the photoetching of rectifier bridge device surface plating
The thickness of material is 0.02 millimeter.Rectifier bridge device integral thickness is 0.58 millimeter.
The electrode connection diagram of the rectifier bridge device of the technique manufacture of embodiment of the present invention as shown in FIG. 6, wherein
A is exchange input AC1Mouthful, b is exchange input AC2Mouthful, c is output cathode, and d is output negative pole.
Further, the application structure signal of the rectifier bridge device of the technique manufacture of embodiment of the present invention in the chips
Figure, rectifier bridge device connect rectifier diode 30, metal derby 40 and pcb board by pad, and pcb board metal line is along rectificating bridge
Conductive layer arrangement on part.
In the description of this specification, reference term " embodiment ", " certain embodiments ", " schematically implementation
What the description of mode ", " example ", " specific example " or " some examples " etc. meant to describe in conjunction with the embodiment or example
Particular features, structures, materials, or characteristics are contained at least one embodiment or example of the present invention.In this specification
In, schematic expression of the above terms are not necessarily referring to identical embodiment or example.Moreover, the specific spy of description
Sign, structure, material or feature can be combined in any suitable manner in any one or more embodiments or example.
While embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that：?
Can these embodiments be carried out with a variety of variations in the case of not departing from the principle of the present invention and objective, modification, replace and become
Type, the scope of the present invention are limited by claim and its equivalent.
Claims (9)
1. a kind of rectifier bridge device packaging technology, which is characterized in that include the following steps：
(1) conductive layer is prepared on insulation board；
(2) Excess conductive layer is removed；
(3) rectifier diode is fixed on the conductive layer；
(4) thickness metal derby identical with the rectifier diode is fixed on the conductive layer；
(5) the filling insulation encapsulating material between the rectifier diode and the metal derby, controls the insulation encapsulating material
Height be slightly below the rectifier diode and the metal derby；
(6) photoetching is carried out, the top of the top electrodes and the metal derby of the rectifier diode is exposed.
2. rectifier bridge device packaging technology according to claim 1, which is characterized in that the thickness of the insulation board is less than
0.5 millimeter.
3. rectifier bridge device packaging technology according to claim 2, which is characterized in that the thickness of the insulation board is 0.3
Millimeter.
4. rectifier bridge device packaging technology according to claim 1, which is characterized in that step prepares conductive layer in (1)
Method includes evaporation, sputtering or plating.
5. rectifier bridge device packaging technology according to claim 1, which is characterized in that remove Excess conductive in step (2)
The method of layer includes photoetching or etching.
6. rectifier bridge device packaging technology according to claim 1, which is characterized in that by rectifier diode in step (3)
The mode for being fixed on the conductive layer includes eutectic die bond, soldering paste die bond or conductive gluing knot.
7. rectifier bridge device packaging technology according to claim 1, which is characterized in that in step (4) by thickness with it is described
The mode that the identical metal derby of rectifier diode is fixed on the conductive layer includes eutectic die bond, soldering paste die bond or conductive gluing
Knot.
8. rectifier bridge device packaging technology according to claim 1, which is characterized in that encapsulating of insulating described in step (5)
Material includes liquid dielectric encapsulating material.
9. rectifier bridge device packaging technology according to claim 1, which is characterized in that in step (6), carrying out photoetching behaviour
It is further comprising the steps of before work：
Photosensitive insulating material is coated on the surface of rectifier bridge device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810644383.4A CN108807189A (en) | 2018-06-21 | 2018-06-21 | Rectifier bridge device packaging technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810644383.4A CN108807189A (en) | 2018-06-21 | 2018-06-21 | Rectifier bridge device packaging technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108807189A true CN108807189A (en) | 2018-11-13 |
Family
ID=64084208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810644383.4A Pending CN108807189A (en) | 2018-06-21 | 2018-06-21 | Rectifier bridge device packaging technology |
Country Status (1)
| Country | Link |
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| CN (1) | CN108807189A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117038523A (en) * | 2022-11-28 | 2023-11-10 | 江苏新智达新能源设备有限公司 | High-power rectifier bridge packaging method |
| CN117577544A (en) * | 2023-11-21 | 2024-02-20 | 常州志得电子有限公司 | Rectifier bridge device packaging technology |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107527887A (en) * | 2017-08-22 | 2017-12-29 | 华进半导体封装先导技术研发中心有限公司 | A kind of stacking encapsulation method and structure |
| CN207517664U (en) * | 2017-12-14 | 2018-06-19 | 湖北方晶电子科技有限责任公司 | Encapsulating structure and semiconductor element |
-
2018
- 2018-06-21 CN CN201810644383.4A patent/CN108807189A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107527887A (en) * | 2017-08-22 | 2017-12-29 | 华进半导体封装先导技术研发中心有限公司 | A kind of stacking encapsulation method and structure |
| CN207517664U (en) * | 2017-12-14 | 2018-06-19 | 湖北方晶电子科技有限责任公司 | Encapsulating structure and semiconductor element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117038523A (en) * | 2022-11-28 | 2023-11-10 | 江苏新智达新能源设备有限公司 | High-power rectifier bridge packaging method |
| CN117038523B (en) * | 2022-11-28 | 2024-03-22 | 江苏新智达新能源设备有限公司 | High-power rectifier bridge packaging method |
| CN117577544A (en) * | 2023-11-21 | 2024-02-20 | 常州志得电子有限公司 | Rectifier bridge device packaging technology |
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Application publication date: 20181113 |