TWI583028B - Light emitting device with beam shaping structure and manufacturing method of the same - Google Patents
Light emitting device with beam shaping structure and manufacturing method of the same Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
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- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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Description
本發明有關一種發光裝置及其製造方法，特別關於一種具有光形調整結構之晶片級封裝發光裝置及其製造方法。 The present invention relates to a light-emitting device and a method of fabricating the same, and more particularly to a wafer-level package light-emitting device having a light-shaped adjustment structure and a method of fabricating the same.
隨著LED技術的演進，晶片級封裝(chip scale packaging，CSP)發光裝置以其明顯的優勢於近年開始受到廣大的重視。以最廣泛被使用之白光CSP發光裝置為例，如第1A圖所示，先前技術所揭露之白光CSP發光裝置係由一覆晶式LED晶片71與一包覆LED晶片的螢光結構72所組成，其螢光結構72覆蓋LED晶片71的上表面與四個立面，故CSP發光裝置可從其頂面及四個側面發出光線，即由不同方向的五個面發出光線(五面發光)。 With the evolution of LED technology, chip scale packaging (CSP) illuminators have received much attention in recent years due to their obvious advantages. Taking the most widely used white light CSP light-emitting device as an example, as shown in FIG. 1A, the white light CSP light-emitting device disclosed in the prior art is composed of a flip-chip LED chip 71 and a fluorescent structure 72 covering the LED chip. The fluorescent structure 72 covers the upper surface and the four elevations of the LED chip 71, so that the CSP illumination device can emit light from the top surface and the four sides thereof, that is, light emitted from five faces in different directions (five-sided illumination) ).
相較於傳統支架型(PLCC-type)LED，CSP發光裝置具有以下優點：(1)不需要金線及額外的支架，因此可明顯節省材料成本；(2)因省略了支架，可進一步降低LED晶片與散熱板之間的熱阻，因此在相同操作條件下將具有較低的操作溫度，或進而增加操作功率；(3)較低的操作溫度可使LED晶片具有較高的晶片量子轉換效率；(4)大幅縮小的封裝尺寸使 得在設計模組或燈具時，具有更大的設計彈性；(5)具有小發光面積，因此可縮小光展量(Etendue)，使得二次光學更容易設計，亦或藉此獲得高發光強度(intensity)。 Compared with the traditional bracket type (PLCC-type) LED, the CSP lighting device has the following advantages: (1) no need for gold wires and additional brackets, so material cost can be significantly saved; (2) can be further reduced because the bracket is omitted The thermal resistance between the LED chip and the heat sink will therefore have a lower operating temperature or, in turn, increase the operating power under the same operating conditions; (3) a lower operating temperature allows the LED wafer to have a higher wafer quantum conversion. Efficiency; (4) greatly reduced package size It has greater design flexibility when designing modules or lamps; (5) It has a small light-emitting area, so it can reduce the etendue, making secondary optics easier to design, or thereby obtaining high luminous intensity. (intensity).
CSP發光裝置具有諸多優點，然而先前技術所揭露之CSP發光裝置為五面發光，因此具有較大的發光角度，依CSP發光裝置之不同尺寸比例，其發光角度約介於140度至160度之間，遠大於傳統支架型LED之發光角度(約120度)。雖大發光角度之CSP發光裝置於部分應用具有其優勢，但較大的發光角度卻不適合於需小發光角度之光源的應用，例如，側向式背光模組或投射燈等應用皆需採用具有小發光角度之光源以提升光線在傳遞上之能量利用效率(光源運用得光率)，因此，CSP發光裝置需進一步具有較小之發光角度才能滿足此類應用需求。 The CSP illuminating device has many advantages. However, the CSP illuminating device disclosed in the prior art has five-sided illuminating, and therefore has a large illuminating angle. According to different size ratios of the CSP illuminating device, the illuminating angle is about 140 to 160 degrees. Between, it is much larger than the illumination angle of the traditional bracket type LED (about 120 degrees). Although the CSP illumination device with large illumination angle has its advantages in some applications, the larger illumination angle is not suitable for the application of the light source with a small illumination angle. For example, the application of the lateral backlight module or the projection lamp needs to have The light source with a small illumination angle enhances the energy utilization efficiency of the light transmission (the light source is used as the light source). Therefore, the CSP illumination device needs to have a smaller illumination angle to meet the needs of such applications.
雖然傳統上可於LED封裝體上製作一次光學透鏡，使光形可進一步聚集，以得到所需之小發光角度。然而，對於尺寸大幅縮小的CSP發光裝置而言，其在有限的空間內並不適合設置一次光學透鏡，此舉除了會大幅增加生產成本，亦會明顯增加CSP發光裝置的外形尺寸而失去其小尺寸的優勢。 Although it is conventional to fabricate an optical lens on the LED package, the light shape can be further gathered to achieve the desired small illumination angle. However, for a CSP illuminating device with a greatly reduced size, it is not suitable for setting a primary optical lens in a limited space, which not only greatly increases the production cost, but also significantly increases the external dimensions of the CSP illuminating device and loses its small size. The advantages.
又，如第1B圖所示，其為另一種先前技術所揭露之頂面發光CSP發光裝置，可提供較小之發光角度。該CSP發光裝置係由一覆晶式LED晶片71、一螢光結構72及一反射結構73所構成，螢光結構72覆蓋LED晶片71的上表面，而反射結構73包覆該LED晶片71的四個立面，在這樣的結構下，CSP發光裝置僅能從其頂面發出光線(頂面發光)，因此整體上可具有較小的發光角度，其發光角度介於120度至130度之間。然而，如第1C 圖所示，該頂面發光CSP發光裝置之反射結構73係由高濃度之光散射性微粒混合於高分子材料中所形成，通常光散射性微粒之重量百分比濃度需大於30%，以達到將光線反射之效用，但部分光子(例如路徑P)會於反射結構73內過度損耗(dissipation)，例如光子於反射結構73內P’(光子路徑終點)處被吸收，故導致了其因光子損耗而使封裝體發光效率下降；又，於製作上，需要另一道製程將反射材料覆蓋LED晶片的四個立面，這使製程變得更為複雜；若需進一步使用精密模具(mold)以更準確地控制反射結構的製程時，亦會明顯增加生產成本。 Further, as shown in FIG. 1B, it is another top-emitting CSP illuminating device disclosed in the prior art, which can provide a smaller illuminating angle. The CSP illumination device is composed of a flip-chip LED chip 71, a phosphor structure 72 and a reflective structure 73. The phosphor structure 72 covers the upper surface of the LED chip 71, and the reflective structure 73 covers the LED chip 71. Four façades, under such a structure, the CSP illuminating device can only emit light from its top surface (top surface illuminating), so that it can have a small illuminating angle as a whole, and its illuminating angle is between 120 and 130 degrees. between. However, as in 1C As shown in the figure, the reflective structure 73 of the top surface light-emitting CSP light-emitting device is formed by mixing high-concentration light-scattering particles into the polymer material, and usually the weight percentage of the light-scattering particles is greater than 30%, so as to achieve The effect of light reflection, but some photons (such as path P) will be excessively dissipated in the reflective structure 73. For example, photons are absorbed in the reflection structure 73 P' (the end of the photon path), resulting in photon loss. In order to reduce the luminous efficiency of the package; in addition, another process is required to cover the four façades of the LED chip, which makes the process more complicated; if further precision molds are needed to further When the process of accurately controlling the reflective structure is accurately controlled, the production cost is also significantly increased.
有鑒於此，如何提供一製程簡易、低生產成本及不增加外形尺寸的技術方案，並能避免光子於封裝體內被吸收而過度損耗之情況下，來調整先前技術所揭露之CSP發光裝置的發光角度或光形，使其縮小發光角度，甚至進一步增加發光角度，以符合不同應用所需，係可有效解決CSP發光裝置目前於應用上所遭遇之問題。 In view of this, how to provide a simple process, low production cost and no increase in the size of the technical solution, and can avoid the photon in the package body is absorbed and excessive loss, to adjust the illumination of the CSP illumination device disclosed in the prior art. The angle or shape of the light makes it reduce the angle of illumination, and even further increases the angle of illumination to meet the needs of different applications, which can effectively solve the problems currently encountered in the application of the CSP illumination device.
本發明之一目的在於提供一種晶片級封裝(chip scale packaging，CSP)發光裝置及其製造方法，該發光裝置具有簡易製程與低生產成本，可於不增加先前技術所揭露之CSP發光裝置外形尺寸之下具有小發光角度(如120度至140度)，亦可藉由設計不同之光形調整結構(beam shaping structure)而增加本發明所揭露之CSP發光裝置之發光角度(如160度至170度)，以滿足更多的應用需求。 An object of the present invention is to provide a chip scale packaging (CSP) illuminating device and a manufacturing method thereof, which have a simple process and low production cost, and can not increase the external dimensions of the CSP illuminating device disclosed in the prior art. With a small illumination angle (eg, 120 degrees to 140 degrees), the illumination angle of the CSP illumination device disclosed in the present invention can be increased by designing different beam shaping structures (eg, 160 degrees to 170 degrees). Degree) to meet more application needs.
為達上述目的，本發明所揭露的一種小發光角度CSP發光裝 置，其包含一覆晶式LED晶片、一螢光結構及一光形調整結構。覆晶式LED晶片具有一上表面、一下表面、一立面及一電極組；螢光結構形成於LED晶片的上表面與立面上；光形調整結構覆蓋該螢光結構之側部；該光形調整結構包含一高分子材料及一光散射性微粒，該光散射性微粒分佈於該高分子材料中，且該光散射性微粒在該光形調整結構中的一重量百分比為相對低濃度，且不大於30%，如此可避免光子於光形調整結構內過度損耗(dissipation)，並使部分光線散射至其他方向而減少發光角度。 In order to achieve the above object, a small illumination angle CSP illumination package disclosed by the present invention is provided. The device comprises a flip chip LED chip, a phosphor structure and a light adjustment structure. The flip chip type LED chip has an upper surface, a lower surface, a vertical surface and an electrode group; a fluorescent structure is formed on the upper surface and the elevation surface of the LED chip; and a light adjustment structure covers the side of the fluorescent structure; The light-adjusting structure comprises a polymer material and a light-scattering particle, wherein the light-scattering particle is distributed in the polymer material, and a weight percentage of the light-scattering particle in the light-shaped adjusting structure is a relatively low concentration And no more than 30%, so as to avoid excessive dissipation of photons in the light-adjusting structure, and scattering part of the light to other directions to reduce the angle of illumination.
為達上述目的，本發明另揭露一種大發光角度CSP發光裝置，其包含一LED晶片、一螢光結構、一透光結構以及一光形調整結構。LED晶片具有一上表面、一立面及一電極組；螢光結構形成於該LED晶片之上表面與立面上；透光結構形成於該螢光結構上；光形調整結構覆蓋該透光結構之一頂面，該光形調整結構包含一高分子材料及一光散射性微粒，該光散射性微粒分佈於該高分子材料中，且該光散射性微粒在該光形調整結構中的一重量百分比為相對低濃度，且不大於30%，如此可避免光子於光形調整結構內過度損耗(dissipation)，並使部分光線散射至其他方向而增加發光角度。 To achieve the above object, the present invention further discloses a large illumination angle CSP illumination device comprising an LED chip, a phosphor structure, a light transmissive structure, and a light shape adjustment structure. The LED chip has an upper surface, a vertical surface and an electrode group; a fluorescent structure is formed on the upper surface and the upper surface of the LED chip; a light transmitting structure is formed on the fluorescent structure; and the light adjustment structure covers the light transmission a top surface of the structure, the light-shaped adjusting structure comprises a polymer material and a light-scattering particle, wherein the light-scattering particle is distributed in the polymer material, and the light-scattering particle is in the light-shaped adjusting structure One weight percentage is a relatively low concentration, and is not more than 30%. This avoids excessive dissipation of photons in the light-adjusting structure and causes partial light to be scattered to other directions to increase the angle of illumination.
為達上述目的，本發明又揭露一種小發光角度之單色光CSP發光裝置，其包含一LED晶片及一光形調整結構。LED晶片具有一上表面、一立面及一電極組；光形調整結構至少覆蓋該立面，該光形調整結構包含一高分子材料及一光散射性微粒，該光散射性微粒分佈於該高分子材料中，且該光散射性微粒在該光形調整結構中的一重量百分比為相對低濃度，且不大於30%，如此可避免光子於光形調整結構內過度損耗 (dissipation)，並使部分光線散射至其他方向而減少發光角度。 To achieve the above object, the present invention further discloses a monochromatic light CSP illumination device with a small illumination angle, comprising an LED chip and a light shape adjustment structure. The LED chip has an upper surface, a façade and an electrode group; the light adjustment structure covers at least the façade, and the light adjustment structure comprises a polymer material and a light scattering particle, wherein the light scattering particle is distributed In the polymer material, a percentage by weight of the light-scattering fine particles in the light-shaped adjusting structure is a relatively low concentration, and is not more than 30%, so that the photon is excessively lost in the light-shaped adjusting structure. (dissipation), and scattering part of the light to other directions to reduce the angle of illumination.
為達上述目的，本發明再揭露一種發光裝置的製造方法，其包含以下步驟：放置複數個LED晶片於一離形材料上，以形成一LED晶片陣列；形成複數個封裝構造於該等LED晶片上，該等封裝構造彼此相連；以及切割該等封裝構造。在切割該等封裝構造之前或之後，可移除該離形材料。 To achieve the above object, the present invention further discloses a method of fabricating a light emitting device, comprising the steps of: placing a plurality of LED chips on a release material to form an array of LED chips; forming a plurality of packages on the LED chips. The package structures are connected to each other; and the package structures are cut. The release material can be removed before or after cutting the package construction.
藉此，本發明所揭露之發光裝置及其製造方法能至少提供以下的有益效果：發光裝置的光形調整結構係具有較低濃度的光散射性微粒(重量百分比不大於30%)，當光線通過光形調整結構時，可使部分光線散射至其他方向，並使原光傳遞方向的光線強度衰減，同時亦可降低光子於光形調整結構內之損耗(dissipation)，故可提升整體之發光效率。 Thereby, the light-emitting device and the manufacturing method thereof disclosed by the invention can at least provide the following beneficial effects: the light-shaped adjustment structure of the light-emitting device has a lower concentration of light-scattering particles (weight percentage is not more than 30%), when the light When the structure is adjusted by the light shape, part of the light can be scattered to other directions, and the light intensity in the original light transmission direction is attenuated, and the loss of the photon in the light adjustment structure can also be reduced, thereby improving the overall illumination. effectiveness.
因此，當光形調整結構被設置於本發明所揭露之發光裝置的側部時，從LED晶片立面方向(例如水平方向)所射出之光線在通過光形調整結構的過程中，會有一部分被散射至其他方向，而另一部分則維持原方向(或接近原方向)前進；如此，從發光裝置的側部(例如水平方向)射出的光線將會減少，而從發光裝置的頂部(例如垂直方向)射出的光線則會增加，使得整體上的發光角度減小，藉此，本發明所揭露之發光裝置可具有小發光角度(例如可減小至120度至140度)。 Therefore, when the light adjustment structure is disposed on the side of the light-emitting device disclosed in the present invention, the light emitted from the LED wafer elevation direction (for example, the horizontal direction) may be partially passed through the light-shaped adjustment structure. Scattered to other directions while the other portion maintains the original direction (or near the original direction); thus, the light emitted from the side of the illumination device (eg, horizontal) will be reduced, from the top of the illumination device (eg, vertical) The light emitted by the direction is increased, so that the overall illumination angle is reduced, whereby the illumination device disclosed in the present invention can have a small illumination angle (for example, can be reduced to 120 to 140 degrees).
又，當本發明所揭露之光形調整結構被設置於LED晶片的上方，並與LED晶片的上表面保持一距離時，可使從發光裝置之頂部(例如垂直方向)射出的光線衰減，使從發光裝置的側部(例如水平方向)射出的光線增加，因而使得整體上的發光角度增加(例如可增加至160度至170 度)。 Moreover, when the light-shaped adjustment structure disclosed in the present invention is disposed above the LED wafer and at a distance from the upper surface of the LED wafer, the light emitted from the top of the light-emitting device (for example, the vertical direction) can be attenuated. The light emitted from the side (for example, the horizontal direction) of the light-emitting device is increased, thereby increasing the overall illumination angle (for example, it can be increased to 160 degrees to 170 degrees) degree).
此外，本發明所揭露之光形調整結構具有製程簡易、容易控制與製作成本低廉之特性，且可容易地製作於CSP發光裝置內而不增加其外形尺寸，因此適合應用於CSP發光裝置之發光角度之調整。 In addition, the light shape adjusting structure disclosed by the invention has the characteristics of simple process, easy control and low manufacturing cost, and can be easily fabricated in the CSP light-emitting device without increasing its outer shape, so it is suitable for the light-emitting of the CSP light-emitting device. Angle adjustment.
為讓上述目的、技術特徵及優點能更明顯易懂，下文係以較佳之實施例配合所附圖式進行詳細說明。 The above objects, technical features and advantages will be more apparent from the following description.
1A、1B、1C、1D、1E‧‧‧發光裝置 1A, 1B, 1C, 1D, 1E‧‧‧ illuminating devices
100‧‧‧LED晶片陣列 100‧‧‧LED chip array
10‧‧‧LED晶片 10‧‧‧LED chip
11‧‧‧上表面 11‧‧‧ upper surface
12‧‧‧下表面 12‧‧‧ Lower surface
13‧‧‧立面 13‧‧‧Facade
14‧‧‧電極組 14‧‧‧Electrode group
200‧‧‧封裝構造 200‧‧‧Package construction
20‧‧‧螢光結構 20‧‧‧Fluorescent structure
21‧‧‧頂部 21‧‧‧ top
211‧‧‧頂面 211‧‧‧ top surface
22‧‧‧側部 22‧‧‧ side
221‧‧‧側面 221‧‧‧ side
222‧‧‧底面 222‧‧‧ bottom
23‧‧‧延伸部 23‧‧‧Extension
231‧‧‧頂面 231‧‧‧ top surface
30、30’‧‧‧光形調整結構、BSS 30, 30’‧‧‧Light profile adjustment structure, BSS
301‧‧‧高分子材料 301‧‧‧Polymer materials
302‧‧‧光散射性微粒 302‧‧‧Light scattering particles
31‧‧‧頂面 31‧‧‧ top surface
32‧‧‧側面 32‧‧‧ side
33‧‧‧底面 33‧‧‧ bottom
40、40’‧‧‧透光結構 40, 40'‧‧‧Light transmission structure
41‧‧‧頂面 41‧‧‧ top surface
50‧‧‧軟性緩衝結構 50‧‧‧Soft buffer structure
71‧‧‧LED晶片 71‧‧‧LED chip
72‧‧‧螢光結構 72‧‧‧Fluorescent structure
73‧‧‧反射結構 73‧‧‧Reflective structure
900‧‧‧離形材料 900‧‧‧Folding materials
D1‧‧‧垂直方向 D1‧‧‧Vertical direction
D2‧‧‧水平方向 D2‧‧‧ horizontal direction
L、L1、L2‧‧‧光線 L, L1, L2‧‧‧ rays
W‧‧‧第一特徵尺寸、特徵尺寸 W‧‧‧First feature size, feature size
T‧‧‧第二特徵尺寸、特徵尺寸 T‧‧‧Second feature size, feature size
P‧‧‧光子路徑 P‧‧‧Photon Path
P’‧‧‧光子路徑終點 P’‧‧‧ photon path end point
第1A圖及第1B圖分別為先前技術所揭露之發光裝置全剖視圖；第1C圖為第1B圖所示的發光裝置的光線示意圖；第2A圖及第2B圖分別為依據本發明之第1較佳實施例之發光裝置的立體圖及全剖視圖；第2C圖為第2B圖所示的發光裝置的光線示意圖；第3A圖及第3B圖分別為第2B圖所示的發光裝置的其他態樣的示意圖；第4圖為依據本發明之第2較佳實施例之發光裝置的全剖視圖；第5圖為依據本發明之第3較佳實施例之發光裝置的全剖視圖；第6圖為依據本發明之第4較佳實施例之發光裝置的全剖視圖；第7A圖及第7B圖分別為依據本發明之第5較佳實施例之發光裝置的立體圖及全剖視圖；以及第8A圖至第9B圖分別為依據本發明之較佳實施例之發光裝置之製造方法的步驟之示意圖。 1A and 1B are respectively a full cross-sectional view of a light-emitting device disclosed in the prior art; FIG. 1C is a schematic view of a light-emitting device shown in FIG. 1B; FIGS. 2A and 2B are respectively a first embodiment according to the present invention; A perspective view and a full cross-sectional view of a light-emitting device of a preferred embodiment; a second embodiment of the light-emitting device shown in FIG. 2B; and FIGS. 3A and 3B are respectively other aspects of the light-emitting device shown in FIG. 4 is a full cross-sectional view of a light-emitting device according to a second preferred embodiment of the present invention; and FIG. 5 is a full cross-sectional view of a light-emitting device according to a third preferred embodiment of the present invention; A full-sectional view of a light-emitting device according to a fourth preferred embodiment of the present invention; and FIGS. 7A and 7B are respectively a perspective view and a full cross-sectional view of a light-emitting device according to a fifth preferred embodiment of the present invention; and FIG. 8A to FIG. 9B is a schematic view showing the steps of a method of fabricating a light-emitting device according to a preferred embodiment of the present invention.
請參閱第2A及2B圖所示，其為依據本發明之第1較佳實施例之發光裝置1A的立體圖及全剖視圖。發光裝置1A可包含一LED晶片10、一螢光結構20、一光形調整結構(beam shaping structure，或可簡稱為BSS)30及一透光結構40，而螢光結構20、BSS 30及透光結構40又可構成可透光的一封裝構造200；該些元件的技術內容將依序說明如下。 2A and 2B, which are perspective views and full cross-sectional views of a light-emitting device 1A according to a first preferred embodiment of the present invention. The illuminating device 1A can include an LED chip 10, a fluorescent structure 20, a beam shaping structure (or simply BSS) 30, and a light transmitting structure 40, and the fluorescent structure 20, the BSS 30, and the transparent structure. The light structure 40 can in turn constitute a package structure 200 that is transparent to light; the technical contents of the components will be described below in order.
LED晶片10為一覆晶式LED晶片，其包含一上表面11、一下表面12、一立面13及一電極組14。上表面11與下表面12為相對且相反地設置，而立面13形成於上表面11與下表面12之間、且連接上表面11與下表面12。換言之，立面13是沿著上表面11之邊緣與下表面12之邊緣而形成，故立面13相對於上表面11與下表面12為環形(例如矩型環)。 The LED chip 10 is a flip chip type LED chip including an upper surface 11, a lower surface 12, a vertical surface 13 and an electrode group 14. The upper surface 11 and the lower surface 12 are disposed opposite and opposite, and the elevation 13 is formed between the upper surface 11 and the lower surface 12 and connects the upper surface 11 and the lower surface 12. In other words, the façade 13 is formed along the edge of the upper surface 11 and the edge of the lower surface 12, so the façade 13 is annular (e.g., a rectangular ring) with respect to the upper surface 11 and the lower surface 12.
電極組14設置於下表面12上，且可具有二個以上之電極。電能(圖未示)可透過電極組14供應至LED晶片10內，以使LED晶片10發出光線。由於可產生光線之發光層(圖未示)通常接近LED晶片10內部之下方，發光層所產生之光線會穿透LED晶片10之上表面11與立面13而向外傳遞。換言之，光線至少可從朝向不同方向之五個面射出。 The electrode group 14 is disposed on the lower surface 12 and may have more than two electrodes. Electrical energy (not shown) may be supplied to the LED wafer 10 through the electrode group 14 to cause the LED wafer 10 to emit light. Since the light-emitting layer (not shown) which is capable of generating light is generally located below the inside of the LED chip 10, the light generated by the light-emitting layer passes through the upper surface 11 and the elevation 13 of the LED wafer 10 to be transmitted outward. In other words, the light can be emitted from at least five faces that are oriented in different directions.
螢光結構20可改變「從LED晶片10之上表面11及立面13所發出」的光線之波長。也就是，LED晶片10所發出之光線(例如為藍光)在通過螢光結構20時，一部分的光線接觸到螢光結構20的螢光材料而被轉換波長(例如變為黃光)，而另一部分的光線未有接觸到螢光材料而維持其既有波長；兩部分的光線爾後相混合而形成具有所需顏色之光束(例如為白 光)。 The fluorescent structure 20 can change the wavelength of the light "sent from the upper surface 11 and the elevation 13 of the LED chip 10". That is, when the light emitted by the LED chip 10 (for example, blue light) passes through the fluorescent structure 20, a part of the light contacts the fluorescent material of the fluorescent structure 20 to be converted into a wavelength (for example, becomes yellow), and the other A portion of the light does not touch the phosphor material to maintain its wavelength; the two portions of the light are then mixed to form a beam of the desired color (for example, white) Light).
結構上，螢光結構20可包含一頂部21、一側部22及一延伸部23，頂部21形成且覆蓋於LED晶片10之上表面11上，可改變上表面11所射出之光線的波長；而側部22形成且覆蓋於LED晶片10之立面13上，可改變立面13所射出之光線的波長；延伸部23則是自側部22向外延伸(即朝向遠離立面13之方向延伸)。側部22及延伸部23皆呈環狀，圍繞該LED晶片10；延伸部23的厚度可小於晶片10的厚度。 Structurally, the fluorescent structure 20 can include a top portion 21, a side portion 22 and an extension portion 23 formed on the upper surface 11 of the LED chip 10 to change the wavelength of the light emitted by the upper surface 11; The side portion 22 is formed and covers the façade 13 of the LED chip 10 to change the wavelength of the light emitted by the façade 13; the extension portion 23 extends outward from the side portion 22 (ie, away from the façade 13). extend). Both the side portion 22 and the extension portion 23 are annular and surround the LED wafer 10; the thickness of the extension portion 23 may be smaller than the thickness of the wafer 10.
此外，頂部21具有一頂面211，其沿著一垂直方向D1(即LED晶片10的厚度方向)與LED晶片10之上表面11相距；側部22具有一側面221，其沿著一水平方向D2(即與垂直方向D1相互垂直之方向)與LED晶片10之立面13相距；延伸部23具有一頂面231，其沿著垂直方向D1與LED晶片10之上表面11相距，且位於上表面11之下方。 In addition, the top portion 21 has a top surface 211 which is spaced apart from the upper surface 11 of the LED chip 10 along a vertical direction D1 (ie, the thickness direction of the LED wafer 10); the side portion 22 has a side surface 221 which is along a horizontal direction. D2 (ie, a direction perpendicular to the vertical direction D1) is spaced from the façade 13 of the LED chip 10; the extension portion 23 has a top surface 231 which is spaced apart from the upper surface 11 of the LED wafer 10 in the vertical direction D1 and is located above Below the surface 11.
光形調整結構(BSS)30可改變從螢光結構20所射出之光線的光形(radiation pattern)，也就是，可減小該光線之發光角度(beam angle)，該發光角度通常被定義為「半功率角」，即一光源於空間中之某個方向具有一相對最大輻射通量密度，該最大輻射通量密度值之一半的兩點之間所夾的角度稱為半功率角。 The light adjustment structure (BSS) 30 can change the radiation pattern of the light emitted from the fluorescent structure 20, that is, the beam angle of the light can be reduced, and the angle of illumination is generally defined as The "half power angle", that is, a light source has a relative maximum radiant flux density in a certain direction in space, and the angle between two points of one half of the maximum radiant flux density value is called a half power angle.
具體而言，在未設置BSS 30的情況下，從螢光結構20所射出的光線可構成一指向性的光束(beam)，該光束具有一發光角度(例如140度至160度)；當BSS 30設置後，該發光角度將會減小(例如減為120度至140度)。 Specifically, in the case where the BSS 30 is not provided, the light emitted from the fluorescent structure 20 may constitute a directional beam having a light-emitting angle (for example, 140 degrees to 160 degrees); when the BSS After the setting of 30, the illumination angle will be reduced (for example, by 120 degrees to 140 degrees).
更具體而言，BSS 30可覆蓋螢光結構20之側部22之側面221 及延伸部23之頂面231，並且依據不同製程條件之控制，可形成不同的樣態。例如，如第2A圖及第2B圖所示，BSS 30之頂面31與螢光結構20之頂部21之頂面211可實質齊平，即，螢光結構20之頂部21不被BSS 30所遮蔽。兩頂面31及211實質齊平可指：在製程能力及製程公差下，兩頂面31及211係預期無段差。 More specifically, the BSS 30 can cover the side 221 of the side 22 of the phosphor structure 20 And the top surface 231 of the extension portion 23, and according to the control of different process conditions, different states can be formed. For example, as shown in FIGS. 2A and 2B, the top surface 31 of the BSS 30 and the top surface 211 of the top portion 21 of the phosphor structure 20 may be substantially flush, that is, the top portion 21 of the phosphor structure 20 is not covered by the BSS 30. Shaded. The fact that the two top surfaces 31 and 211 are substantially flush may mean that the two top surfaces 31 and 211 are expected to have no step difference under the process capability and process tolerance.
於其他態樣中，如第3A圖所示，BSS 30還可進一步覆蓋螢光結構20之頂部21之頂面211；或是如第3B圖所示，BSS 30之頂面31可低於螢光結構20之頂部21之頂面211，也就是，除了頂部21不被遮蔽外，側部22僅部分地被BSS 30所遮蔽。換言之，BSS 30至少為一環狀結構，其圍繞螢光結構20之側部22、並可選擇地(optionally)將頂部21遮蔽、亦可選擇地僅部分遮蔽螢光結構20之側部22。 In other aspects, as shown in FIG. 3A, the BSS 30 may further cover the top surface 211 of the top portion 21 of the fluorescent structure 20; or as shown in FIG. 3B, the top surface 31 of the BSS 30 may be lower than the firefly. The top surface 211 of the top 21 of the light structure 20, that is, the side portion 22 is only partially obscured by the BSS 30, except that the top portion 21 is not obscured. In other words, the BSS 30 is at least a ring-shaped structure that surrounds the side portions 22 of the phosphor structure 20 and optionally shields the top portion 21, and optionally only partially shields the side portions 22 of the phosphor structure 20.
請復參閱第2A及2B圖，BSS 30材料上可包含一高分子材料301及一光散射性微粒302，光散射性微粒302分佈於高分子材料301中。光散射性微粒302可使光線散射、改變光線的前進方向，因此其材料可包含二氧化鈦(TiO2)、氮化硼(BN)、二氧化矽(SiO2)或三氧化二鋁(Al2O3)等可造成光線散射者。高分子材料301用以固定光散射性微粒302，且不會遮蔽光線，因此其材料可包含矽膠、環氧樹脂或橡膠等可使光線穿過者；較佳地，高分子材料301為熱固化者。 Referring to FIGS. 2A and 2B, the BSS 30 material may include a polymer material 301 and a light-scattering particle 302, and the light-scattering particles 302 are distributed in the polymer material 301. The light-scattering particles 302 can scatter light and change the direction of advancement of the light, so the material thereof may include titanium dioxide (TiO 2 ), boron nitride (BN), cerium oxide (SiO 2 ) or aluminum oxide (Al 2 O). 3 ) etc. can cause light to scatter. The polymer material 301 is used to fix the light-scattering particles 302 without shielding the light. Therefore, the material may include silicone, epoxy resin or rubber to pass light. Preferably, the polymer material 301 is heat-cured. By.
光散射性微粒302在BSS 30中的一重量百分比不大於30%，以避免過多的光散射性微粒302造成光線難以穿過BSS 30。換言之，BSS 30具有較低濃度的光散射性微粒302。 The light-scattering particles 302 are not more than 30% by weight in the BSS 30 to avoid excessive light-scattering particles 302 from causing light to pass through the BSS 30. In other words, the BSS 30 has a lower concentration of light-scattering particles 302.
較佳地，光散射性微粒302係均勻地分佈於固化後的高分子 材料301中，但也有可能光散射性微粒302因為重力或其他製程變因而非預期地均勻。或者，亦可使光散射性微粒302特定地集中(即不分佈)於某一處，舉例而言，光散射性微粒302可不分佈於螢光結構20之頂部21上方的高分子材料301中，以使從頂部21射出之光線不會因光散射性微粒302而散射。 Preferably, the light-scattering particles 302 are uniformly distributed on the cured polymer. In material 301, it is also possible that light-scattering particles 302 are unintentionally uniform due to gravity or other process variations. Alternatively, the light-scattering particles 302 may be specifically concentrated (ie, not distributed) at a certain position. For example, the light-scattering particles 302 may not be distributed in the polymer material 301 above the top portion 21 of the fluorescent structure 20, The light emitted from the top portion 21 is not scattered by the light-scattering particles 302.
然後，透光結構40形成於BSS 30上，且覆蓋BSS 30之頂面31，以保護BSS 30及螢光結構20。若BSS 30未有覆蓋螢光結構20之頂部21時(如第2B及3B圖所示)，透光結構40可同時形成且覆蓋螢光結構20之頂面211及BSS 30之頂面31上。 The light transmissive structure 40 is then formed on the BSS 30 and covers the top surface 31 of the BSS 30 to protect the BSS 30 and the phosphor structure 20. If the BSS 30 does not cover the top 21 of the phosphor structure 20 (as shown in FIGS. 2B and 3B), the light transmissive structure 40 can be simultaneously formed and covers the top surface 211 of the phosphor structure 20 and the top surface 31 of the BSS 30. .
接著請配合參閱第2C圖所示的發光裝置1A內的光線示意圖，以說明發光裝置1A之發光角度的調整。 Next, please refer to the light ray diagram in the light-emitting device 1A shown in FIG. 2C to explain the adjustment of the light-emitting angle of the light-emitting device 1A.
形成於螢光結構20之側部22上的光形調整結構(BSS)30係具有較低濃度的光散射性微粒(重量百分比不大於30%)302，故「從LED晶片10射出、然後經過螢光結構20、且偏向水平方向D2」的光線L可進入至BSS 30中。在BSS 30中，光線L的一部分(光線L1)沒有接觸到光散射性微粒302時(或被光散射性微粒302散射，但僅輕微改變方向)，會繼續保持(或接近)原方向(即接近水平方向D2)前進，然後從BSS 30的側面32射出；光線L的另一部分接觸到光散射性微粒302後大幅改變其前進方向，其中的一部分光線(光線L2)會轉為偏向垂直方向D1，然後從BSS 30的頂面31射出。 The light-shaped adjustment structure (BSS) 30 formed on the side portion 22 of the fluorescent structure 20 has a lower concentration of light-scattering fine particles (less than 30% by weight) 302, so "is emitted from the LED wafer 10, and then passes through The light ray L of the fluorescent structure 20 and biased in the horizontal direction D2" can enter the BSS 30. In the BSS 30, a portion of the light ray L (light ray L1) does not contact the light-scattering particles 302 (or is scattered by the light-scattering particles 302, but only slightly changes direction), and continues to maintain (or close to) the original direction (ie, Advancing toward the horizontal direction D2), and then exiting from the side 32 of the BSS 30; another portion of the light L contacts the light-scattering particles 302 and greatly changes its direction of advancement, and a part of the light (light L2) is turned to the vertical direction D1. Then, it is emitted from the top surface 31 of the BSS 30.
換言之，原本光線L都是偏向水平方向D2傳遞，但經過BSS 30後，僅光線L1偏向水平方向D2而射出，光線L2則偏向垂直方向D1射出。如此，整體上發光裝置1A的側向射出(edge-emitting)光線L減少，而發光 裝置1A的頂向射出(top-emitting)的光線L增加；因此，發光裝置1A所射出的光線L所構成的光束將具有較小的發光角度(其係與習知未有BSS的發光裝置做比較)。同時，因光形調整結構具有較低濃度的光散射性微粒，可降低光子於光形調整結構內之損耗(dissipation)，故可提升整體之發光效率。 In other words, the original light L is transmitted in the horizontal direction D2, but after passing through the BSS 30, only the light L1 is emitted in the horizontal direction D2, and the light L2 is emitted in the vertical direction D1. Thus, the edge-emitting light L of the light-emitting device 1A as a whole is reduced, and the light is emitted. The top-emitting light L of the device 1A is increased; therefore, the light beam L emitted by the light-emitting device 1A will have a smaller light-emitting angle (which is made with a conventional light-emitting device without BSS). Compare). At the same time, since the light-shaped adjustment structure has a lower concentration of light-scattering particles, the loss of photons in the light-shaped adjustment structure can be reduced, so that the overall luminous efficiency can be improved.
接著說明BSS 30的兩項主要設計參數(光散射性微粒302的重量百分濃度、及BSS 30的尺寸)對於發光角度的影響。 Next, the influence of the two main design parameters (weight percentage concentration of the light-scattering fine particles 302 and the size of the BSS 30) of the BSS 30 on the light-emitting angle will be described.
當光散射性微粒302的重量百分比較大時，照射角度將較小。如下表所示的測試結果，測試條件一(重量百分比為1.5%)所對應的照射角度約為128度，大於測試條件二(重量百分比為2.5%)所對應的照射角度約為126度。這樣的原因在於，光散射性微粒302的重量百分比較大時，光線L在通過BSS 30的過程中較易碰撞到光散射性微粒302而產生光學散射，進而轉變前進方向，因此造成發光裝置1A的側向射出光線減少、而頂向射出光線增加，故整體上的發光角度隨之變小。 When the weight percentage of the light-scattering particles 302 is large, the irradiation angle will be small. According to the test results shown in the following table, the irradiation angle corresponding to the test condition 1 (1.5% by weight) is about 128 degrees, and the irradiation angle corresponding to the test condition 2 (2.5% by weight) is about 126 degrees. The reason for this is that when the weight percentage of the light-scattering fine particles 302 is large, the light ray L is more likely to collide with the light-scattering fine particles 302 during the passage of the BSS 30 to cause optical scattering, thereby shifting the traveling direction, thereby causing the light-emitting device 1A. The lateral emission light is reduced, and the top emission light is increased, so that the overall illumination angle becomes smaller.
光散射性微粒302的重量百分比較佳地可設定為不大於10%、且不小於0.1%，以使發光裝置1A能提供120度至140度左右發光角度的光束。 The weight percentage of the light-scattering fine particles 302 can be preferably set to not more than 10% and not less than 0.1% so that the light-emitting device 1A can provide a light beam of an illumination angle of about 120 to 140 degrees.
依據測試結果，BSS 30的設計參數所對應的照射角度如下表所示：
關於BSS 30的尺寸(如第2C圖所示)，當BSS 30的第一特徵尺寸(定義為螢光結構20之側面221與BSS 30的側面32之間的水平距離)W與第二特徵尺寸(定義為BSS 30的頂面31與底面33之間的垂直距離)T的比例(W/T)較大時，發光角度將會較小。如上表所示的測試結果，測試條件一(比例為180/150)所對應的照射角度約為128度，大於測試條件三(比例為250/150)所對應的照射角度約為124度。 Regarding the size of the BSS 30 (as shown in FIG. 2C), when the first feature size of the BSS 30 (defined as the horizontal distance between the side 221 of the fluorescent structure 20 and the side 32 of the BSS 30) W and the second feature size When the ratio (W/T) of T (defined as the vertical distance between the top surface 31 and the bottom surface 33 of the BSS 30) is large, the light-emitting angle will be small. As shown in the above test results, the illumination angle corresponding to test condition 1 (ratio 180/150) is about 128 degrees, and the illumination angle corresponding to test condition three (ratio 250/150) is about 124 degrees.
這樣的原因在於：當兩特徵尺寸W、T的比例(W/T)較大時，沿著水平方向D2的光線L需要穿越BSS的距離較長，因此碰撞到光散射性微粒302而產生散射並轉向的機率明顯上升，但轉向後沿著垂直方向D1的光線L需要穿越BSS的距離較短，因此碰撞到光散射性微粒302而再次產生散射而轉向的機會明顯較小；因此，發光裝置1A的側向射出光線會減少、頂向射出光線會增加，使得整體上光束的發光角度隨之變小。 The reason for this is that when the ratio (W/T) of the two feature sizes W and T is large, the light L along the horizontal direction D2 needs to travel longer distances from the BSS, and thus collides with the light-scattering particles 302 to cause scattering. The probability of steering is obviously increased, but the distance L of the light L along the vertical direction D1 after the steering needs to cross the BSS is short, so that the collision with the light-scattering particles 302 and the scattering is again generated and the chance of steering is significantly smaller; therefore, the light-emitting device The laterally emitted light of 1A is reduced, and the upwardly emitted light is increased, so that the illumination angle of the entire beam becomes smaller.
另一方面，除了BSS 30外，透光結構40亦會影響光束的照射角度。發光裝置1A可依設計需求選擇地(optionally)包含透光結構40，當發光裝置1A包括透光結構40時，光線通過透光結構40會折射，故整體上光束的照射角度會擴大。依據一測試結果，有透光結構40時，光束的發光角度約為125度，而無透光結構40時(圖未示)，光束的發光角度約為120度。 On the other hand, in addition to the BSS 30, the light transmissive structure 40 also affects the illumination angle of the beam. The light-emitting device 1A can optionally include the light-transmitting structure 40 according to design requirements. When the light-emitting device 1A includes the light-transmitting structure 40, the light is refracted by the light-transmitting structure 40, so that the illumination angle of the light beam is enlarged as a whole. According to a test result, when the light-transmitting structure 40 is provided, the light-emitting angle of the light beam is about 125 degrees, and when the light-transmitting structure 40 is not provided (not shown), the light-emitting angle of the light beam is about 120 degrees.
透光結構40除了影響照射角度外，對於發光裝置1A整體上的光汲取效率或光轉換效率亦有助益。也就是，透光結構40的折射係數可選擇小於螢光結構20及BSS 30的折射係數，以接近外界(空氣)之折射係數，俾減少光線在螢光結構20(或BSS 30)、透光結構40與外界之介面上產生全反射而無法有效射出發光裝置1A之外。 In addition to affecting the illumination angle, the light transmitting structure 40 is also useful for the light extraction efficiency or light conversion efficiency of the entire light-emitting device 1A. That is, the refractive index of the light transmitting structure 40 can be selected to be smaller than the refractive index of the fluorescent structure 20 and the BSS 30 to approximate the refractive index of the outside (air), and to reduce the light in the fluorescent structure 20 (or BSS 30), and to transmit light. The structure 40 and the external interface cause total reflection and cannot be effectively emitted outside the light-emitting device 1A.
因此，設計者可依據所需發光角度及光汲取效率，選擇是否採用包括透光結構40之發光裝置1A。 Therefore, the designer can select whether to use the light-emitting device 1A including the light-transmitting structure 40 according to the required light-emitting angle and light extraction efficiency.
再一方面，如第2B、3A及3B圖所示，BSS 30對於螢光結構20有不同覆蓋情況，此不同覆蓋的情況亦可作為控制發光裝置1A之發光角度的設計條件。 On the other hand, as shown in FIGS. 2B, 3A and 3B, the BSS 30 has different coverage conditions for the fluorescent structure 20, and this different coverage can also be used as a design condition for controlling the illumination angle of the light-emitting device 1A.
以上是發光裝置1A的技術內容的說明，接著說明依據本發明其他實施例的發光裝置的技術內容，而各實施例的發光裝置的技術內容應可互相參考，故相同的部分將省略或簡化。 The above is a description of the technical contents of the light-emitting device 1A. Next, the technical contents of the light-emitting device according to other embodiments of the present invention will be described. However, the technical contents of the light-emitting devices of the respective embodiments should be referred to each other, and the same portions will be omitted or simplified.
請參閱第4圖所示，其為依據本發明之第2較佳實施例之發光裝置1B的全剖視圖。發光裝置1B與前述發光裝置1A不同處至少在於：發光裝置1B的螢光結構20不包括延伸部23，故形成於螢光結構20之側部22上的光形調整結構(BSS)30可進一步向下延伸至側部22之底面222(底面222係與側面221相連接)；因此，BSS 30之底面33係與側部22之底面222實質地齊平，且還可與LED晶片10之下表面12實質地齊平。此外，發光裝置1B之螢光結構20的厚度可大於發光裝置1A之螢光結構20的厚度。 Referring to Fig. 4, there is shown a full cross-sectional view of a light-emitting device 1B according to a second preferred embodiment of the present invention. The light-emitting device 1B is different from the light-emitting device 1A at least in that the fluorescent structure 20 of the light-emitting device 1B does not include the extending portion 23, so the light-shaped adjusting structure (BSS) 30 formed on the side portion 22 of the fluorescent structure 20 can further Downwardly extending to the bottom surface 222 of the side portion 22 (the bottom surface 222 is connected to the side surface 221); therefore, the bottom surface 33 of the BSS 30 is substantially flush with the bottom surface 222 of the side portion 22, and may also be under the LED wafer 10 Surface 12 is substantially flush. Further, the thickness of the fluorescent structure 20 of the light-emitting device 1B may be greater than the thickness of the fluorescent structure 20 of the light-emitting device 1A.
請參閱第5圖所示，其為依據本發明之第3較佳實施例之發光裝置1C的全剖視圖。發光裝置1C與前述發光裝置1A及1B不同處至少在於： 發光裝置1C更包含一軟性緩衝結構50，其覆蓋於LED晶片10之上表面11及立面13，而螢光結構20形成於軟性緩衝結構50上。BSS 30可形成於螢光結構20的側部22，亦可進一步覆蓋螢光結構20的頂部21。 Referring to Fig. 5, there is shown a full cross-sectional view of a light-emitting device 1C according to a third preferred embodiment of the present invention. The light-emitting device 1C differs from the aforementioned light-emitting devices 1A and 1B in at least: The illuminating device 1C further includes a soft buffer structure 50 covering the upper surface 11 and the façade 13 of the LED chip 10, and the fluorescent structure 20 is formed on the soft buffer structure 50. The BSS 30 can be formed on the side 22 of the phosphor structure 20, and can further cover the top portion 21 of the phosphor structure 20.
軟性緩衝結構50可提升螢光結構20與LED晶片10之間的結合力量，且可減緩因各元件之間熱膨脹係數不匹配所產生的內應力，還可使螢光結構20內之螢光材料具有近似共形化分佈(approximately conformal coating)之功效。軟性緩衝結構50的進一步說明可參考申請人所申請的臺灣專利申請案(申請號為TW104144441)，該專利申請案的技術內容以引用方式全文併入本文。 The soft buffer structure 50 can improve the bonding strength between the fluorescent structure 20 and the LED wafer 10, and can reduce the internal stress caused by the thermal expansion coefficient mismatch between the components, and can also make the fluorescent material in the fluorescent structure 20. Has the effect of a approximately conformal coating. A further description of the soft buffer structure 50 can be found in the Taiwan Patent Application (Application No. TW104144441) filed by the applicant, the entire disclosure of which is hereby incorporated by reference.
請參閱第6圖所示，其為依據本發明之第4較佳實施例之發光裝置1D的示意圖。發光裝置1D與前述發光裝置1A至1C不同處至少在於：發光裝置1D不包含螢光結構20，故BSS 30係直接覆蓋於LED晶片10之立面13、且可選擇地覆蓋LED晶片10之上表面11；由於不含螢光結構20，LED晶片10所發出的光線的波長不會被改變，故發光裝置1D可提供紅光、綠光、藍光、紅外光或紫外光等單色光，並且具有小發光角度。 Referring to Fig. 6, there is shown a schematic view of a light-emitting device 1D according to a fourth preferred embodiment of the present invention. The illuminating device 1D is different from the illuminating devices 1A to 1C at least in that the illuminating device 1D does not include the fluorescent structure 20, so the BSS 30 directly covers the façade 13 of the LED wafer 10 and optionally covers the LED wafer 10 The surface 11; since the wavelength of the light emitted by the LED chip 10 is not changed by the absence of the fluorescent structure 20, the light-emitting device 1D can provide monochromatic light such as red light, green light, blue light, infrared light or ultraviolet light, and Has a small angle of illumination.
上述各發光裝置1A至1D係將BSS 30設置於發光裝置的側部，可用來減小發光角度，使其光形符合小發光角度之應用。而以下將說明依據本發明之第5較佳實施例之發光裝置1E，其藉由將BSS 30’設置於LED晶片10或螢光結構20之上方來增加光束的照射角度。 Each of the above-described light-emitting devices 1A to 1D is provided with the BSS 30 on the side of the light-emitting device, and can be used to reduce the light-emitting angle so that the light shape conforms to the small light-emitting angle. In the following, a light-emitting device 1E according to a fifth preferred embodiment of the present invention will be described, which increases the irradiation angle of the light beam by disposing the BSS 30' over the LED wafer 10 or the fluorescent structure 20.
請參閱第7A及7B圖所示，其為發光裝置1E的立體圖及全剖視圖(亦為光線示意圖)。類似發光裝置1A，發光裝置1E亦包含一LED晶片10、一螢光結構20、一光形調整結構(BSS)30’及一透光結構40’，各元件 的技術內容可參考發光裝置1A的對應者，但BSS 30’及透光結構40’在配置上不同於發光裝置1A的BSS 30及透光結構40。 Please refer to FIGS. 7A and 7B, which are a perspective view and a full cross-sectional view (also a schematic view of the light) of the light-emitting device 1E. Similar to the light-emitting device 1A, the light-emitting device 1E also includes an LED chip 10, a fluorescent structure 20, a light-shaped adjustment structure (BSS) 30', and a light-transmitting structure 40'. The technical content can be referred to the counterpart of the light-emitting device 1A, but the BSS 30' and the light-transmitting structure 40' are different in configuration from the BSS 30 and the light-transmitting structure 40 of the light-emitting device 1A.
具體而言，透光結構40’係直接地形成於螢光結構20上、並覆蓋螢光結構20的頂部21、側部22以及延伸部23；此外，透光結構40’的頂面41在垂直方向D1係與LED晶片10之上表面11及頂部21之頂面211相距。BSS 30’則形成且覆蓋透光結構40’之頂面41，故在垂直方向D1與LED晶片10及螢光結構20相距；BSS 30’還可為厚度均勻的一層狀結構，亦可僅部分覆蓋透光結構40’之頂面41。 Specifically, the light transmitting structure 40' is directly formed on the fluorescent structure 20 and covers the top portion 21, the side portion 22, and the extending portion 23 of the fluorescent structure 20; further, the top surface 41 of the light transmitting structure 40' is The vertical direction D1 is spaced from the top surface 11 of the LED wafer 10 and the top surface 211 of the top portion 21. The BSS 30' is formed and covers the top surface 41 of the transparent structure 40', so that it is spaced apart from the LED wafer 10 and the fluorescent structure 20 in the vertical direction D1; the BSS 30' may also be a layered structure having a uniform thickness, or only Partially covering the top surface 41 of the light transmissive structure 40'.
BSS 30’具有低密度的光散射性微粒(重量百分比不大於30%，較佳地介於0.1%至10%)302，故「從LED晶片10射出、然後通過透光結構40’」的光線L可進入至BSS 30’中。在BSS 30’中，光線L的一部分(光線L1)可維持(或接近)其原路徑而從BSS 30’的頂面31射出，而光線L的另一部分在碰觸到光散射性微粒302後因光散射現象而較大幅度地改變其前進方向，其中一部分(光線L2)改為偏向水平方向D2、然後從BSS 30’的側面32射出。 The BSS 30' has low-density light-scattering particles (weight percentage is not more than 30%, preferably 0.1% to 10%) 302, so "light emitted from the LED wafer 10 and then passed through the light-transmitting structure 40'" L can enter the BSS 30'. In the BSS 30', a portion of the light ray L (light L1) can be maintained (or approached) to its original path and exit from the top surface 31 of the BSS 30', while another portion of the light ray L after touching the light-scattering particles 302 The direction of advancement is largely changed by the light scattering phenomenon, and a part of the light (L2) is changed to the horizontal direction D2 and then emitted from the side 32 of the BSS 30'.
如此，整體上發光裝置1E的側向射出的光線L因此增加，而發光裝置1E的頂向射出的光線L因此減少，故導致發光裝置1E具有較大的發光角度。依據一測試結果，當BSS 30’形成於透光結構40’上時，發光裝置1E所量測到的發光角度為170度，而前案所揭露之CSP發光裝置並無設置BSS 30’(圖未示)，所量測到的發光角度為140度。因此，BSS 30’可使發光裝置1E的發光角度進一步增加，使其符合更多的應用需求。 As a result, the light L emitted from the side of the light-emitting device 1E as a whole is increased, and the light L emitted from the top of the light-emitting device 1E is thus reduced, so that the light-emitting device 1E has a large light-emitting angle. According to a test result, when the BSS 30' is formed on the light transmissive structure 40', the illumination angle measured by the illumination device 1E is 170 degrees, and the CSP illumination device disclosed in the previous case is not provided with the BSS 30' (Fig. Not shown), the measured illumination angle is 140 degrees. Therefore, the BSS 30' can further increase the illumination angle of the illumination device 1E to meet more application requirements.
接著將說明依據本發明的發光裝置的製造方法，該製造方法 可製造出相同或類似於上述實施例的發光裝置1A至1E，故製造方法的技術內容與發光裝置1A至1E的技術內容可相互參考。 Next, a method of manufacturing a light-emitting device according to the present invention, which is described The light-emitting devices 1A to 1E which are the same or similar to the above-described embodiments can be manufactured, and therefore the technical contents of the manufacturing method and the technical contents of the light-emitting devices 1A to 1E can be referred to each other.
請參閱第8A至8F圖所示，其為依據本發明之較佳實施例之發光裝置之製造方法的各步驟之示意圖(剖視圖)。製造方法至少包含三步驟：放置複數個LED晶片10於一離形材料900上，形成複數個封裝構造200於該等LED晶片10上，以及切割該等封裝構造200。以下將配合各圖式來進一步說明各步驟之技術內容。 Please refer to FIGS. 8A to 8F, which are schematic diagrams (cross-sectional views) showing steps of a method of manufacturing a light-emitting device according to a preferred embodiment of the present invention. The method of fabrication includes at least three steps: placing a plurality of LED wafers 10 on a release material 900, forming a plurality of package structures 200 on the LED wafers 10, and dicing the package structures 200. The technical contents of each step will be further explained below in conjunction with the various drawings.
如第8A圖所示，首先準備一離形材料(例如離型膜)900，而該離形材料900還可放置於一支撐結構(例如矽基板或玻璃基板，圖未示)上；接者，將複數LED晶片10(圖式係以兩個LED晶片10為例示)間隔地放置在離形材料900上，以形成一LED晶片陣列100。較佳地，各LED晶片10之電極組14可陷入至離形材料900中，使LED晶片10之下表面12被離形材料900覆蓋。 As shown in FIG. 8A, a release material (for example, a release film) 900 is first prepared, and the release material 900 can also be placed on a support structure (for example, a ruthenium substrate or a glass substrate, not shown); The plurality of LED wafers 10 (illustrated by the two LED wafers 10 are exemplified) are spaced apart on the release material 900 to form an LED wafer array 100. Preferably, the electrode set 14 of each LED wafer 10 can be trapped into the release material 900 such that the lower surface 12 of the LED wafer 10 is covered by the release material 900.
如第8B至8D圖所示，在該等LED晶片10放置好後，接著形成複數個封裝構造200於該等LED晶片10上，而該等封裝構造200可彼此一體相連。形成封裝構造200於LED晶片10的過程中，可包含以下所述的步驟。 As shown in FIGS. 8B through 8D, after the LED wafers 10 are placed, a plurality of package structures 200 are then formed on the LED wafers 10, and the package structures 200 can be integrally connected to each other. The process of forming the package structure 200 in the LED wafer 10 may include the steps described below.
如第8B圖所示，形成複數個螢光結構20於該等LED晶片10上，並使各螢光結構20的一側部22形成於各LED晶片10之立面13上、並使螢光結構20的一頂部21形成於各LED晶片10之上表面11上。另外，亦可使螢光結構20具有一從側部22延伸出的延伸部23(其亦形成於離形材料900的表面上)。較佳地，螢光結構20的形成可藉由申請人先前提出的公開號US2010/0119839之美國專利申請案(對應於證書號I508331之臺灣專利)所 揭露的技術來達成。 As shown in FIG. 8B, a plurality of phosphor structures 20 are formed on the LED chips 10, and one side portion 22 of each of the phosphor structures 20 is formed on the façade 13 of each LED chip 10, and the phosphor is formed. A top portion 21 of the structure 20 is formed on the upper surface 11 of each of the LED wafers 10. Alternatively, the phosphor structure 20 can have an extension 23 extending from the side portion 22 (which is also formed on the surface of the release material 900). Preferably, the formation of the phosphor structure 20 is made by the applicant's previously proposed U.S. Patent Application Publication No. US 2010/0119839 (corresponding to Taiwan Patent No. I508331). Reveal the technology to achieve.
如第8C圖所示，接著形成複數個光形調整結構(BSS)30，以覆蓋各螢光結構20的側部22的一側面221以及頂部21的一頂面211。形成BSS 30時，亦可使BSS 30不覆蓋螢光結構20的頂部21(如第2A及2B圖所示)。 As shown in FIG. 8C, a plurality of light-shaped adjustment structures (BSS) 30 are formed to cover one side 221 of the side portion 22 of each of the phosphor structures 20 and a top surface 211 of the top portion 21. When the BSS 30 is formed, the BSS 30 may also be prevented from covering the top 21 of the phosphor structure 20 (as shown in Figures 2A and 2B).
此外，在形成BSS 30的過程中，較佳地可先將一高分子材料301及一光散射性微粒302相混合(使固態的光散射性微粒302浸於液態的高分子材料301)，以形成BSS 30的製造材料，再以工業溶劑(例如醇類、烷類等)稀釋後藉由噴塗(spraying)之方法將其噴灑至各螢光結構20上，藉此，稀釋後的高分子材料將因重力之作用而流動，最終如第8C圖所示分佈於離型材料900與各螢光結構20上。又，亦可將BSS 30的製造材料透過點膠(dispensing)或印刷(printing)形成於各螢光結構20之側部22及頂部21上；或藉由模造成型(molding)來將BSS 30的製造材料形成於螢光結構20之側部22及頂部21上；其中，採用模造成型之方法將增加生產成本。待BSS 30的製造材料固化後，即可形成複數個BSS 30於螢光結構20上。 In addition, in the process of forming the BSS 30, a polymer material 301 and a light-scattering particle 302 are preferably mixed (the solid light-scattering particles 302 are immersed in the liquid polymer material 301). The manufacturing material of the BSS 30 is formed, and after being diluted with an industrial solvent (for example, an alcohol, an alkane, etc.), it is sprayed onto each of the fluorescent structures 20 by spraying, whereby the diluted polymer material is used. It will flow due to the action of gravity and will eventually be distributed on the release material 900 and the respective fluorescent structures 20 as shown in Fig. 8C. Moreover, the manufacturing material of the BSS 30 may be formed on the side portion 22 and the top portion 21 of each of the fluorescent structures 20 by dispensing or printing; or the molding of the BSS 30 may be performed by molding. The fabrication material is formed on the side portion 22 and the top portion 21 of the phosphor structure 20; wherein the molding method will increase the production cost. After the fabrication material of the BSS 30 is cured, a plurality of BSSs 30 can be formed on the phosphor structure 20.
BSS 30雖未直接地覆蓋各LED晶片10，但可透過螢光結構20間接地遮蔽各LED晶片10之立面13以及上表面11。因此，從LED晶片10之立面13及上表面11射出的光線仍會通過BSS 30而受BSS 30作用。 Although the BSS 30 does not directly cover the LED chips 10, the elevations 13 and the upper surface 11 of each of the LED chips 10 can be indirectly shielded by the fluorescent structure 20. Therefore, light emitted from the façade 13 and the upper surface 11 of the LED chip 10 is still subjected to the BSS 30 through the BSS 30.
下一步將如第8D圖所示，形成複數個透光結構40於該等螢光結構20及/或該等BSS 30上。在形成透光結構40時，可將透光結構40的製造材料藉由噴灑、旋轉塗佈、模造成型或點膠等適合方式，施加至螢光結構30及/或BSS 30上，然後以加熱等方式使製造材料固化。 Next, as shown in FIG. 8D, a plurality of light transmissive structures 40 are formed on the phosphor structures 20 and/or the BSSs 30. When the light transmissive structure 40 is formed, the material for manufacturing the light transmissive structure 40 may be applied to the fluorescent structure 30 and/or the BSS 30 by a suitable method such as spraying, spin coating, molding, or dispensing, and then heating. The method of curing the manufactured material.
藉由上述步驟可形成對應發光裝置1A的複數個封裝構造200，而該等封裝構造200為一體相連。若設計者依據所需之發光角度及光汲取效率而使封裝構造200不包括透光結構40，則第8D圖所示的形成透光結構40之步驟可省略。 Through the above steps, a plurality of package structures 200 corresponding to the light-emitting device 1A can be formed, and the package structures 200 are integrally connected. If the designer does not include the light transmissive structure 40 in accordance with the required illumination angle and light extraction efficiency, the step of forming the light transmissive structure 40 shown in FIG. 8D may be omitted.
若欲形成對應發光裝置1B的封裝構造200(如第4圖所示)時，可在第8B圖所示的步驟中，將螢光結構20形成為不包括延伸部23者(例如採用模造成型或印刷之方法形成螢光結構20)，則後續的第8C圖所示的步驟中，BSS 30將會形成於離形材料900的表面上。 If the package structure 200 corresponding to the light-emitting device 1B is to be formed (as shown in FIG. 4), the phosphor structure 20 may be formed to include the extension portion 23 in the step shown in FIG. 8B (for example, using a mold-forming type) Alternatively, the method of printing forms the phosphor structure 20), and in the subsequent step shown in Fig. 8C, the BSS 30 will be formed on the surface of the release material 900.
若欲形成對應發光裝置1C的封裝構造200(如第5圖所示)時，可於完成第8A圖所示之步驟後，先以噴灑之方法形成複數個軟性緩衝結構50於該等LED晶片10，然後再形成該等螢光結構20於該等軟性緩衝結構50上，再接續8B圖所示之步驟。 If the package structure 200 corresponding to the light-emitting device 1C is to be formed (as shown in FIG. 5), after completing the step shown in FIG. 8A, a plurality of soft buffer structures 50 may be formed by spraying on the LED chips. 10, then the phosphor structures 20 are formed on the soft buffer structures 50, and the steps shown in FIG. 8B are continued.
若欲形成對應發光裝置1D的封裝構造200(如第6圖所示)時，則「螢光結構20的形成」將可省略，使得後續BSS 30形成時係直接覆蓋LED晶片10之立面13，亦可進一步覆蓋LED晶片10之上表面11。 If the package structure 200 corresponding to the light-emitting device 1D is to be formed (as shown in FIG. 6), the "formation of the phosphor structure 20" will be omitted, so that the subsequent BSS 30 is formed to directly cover the elevation 13 of the LED chip 10. The upper surface 11 of the LED chip 10 can be further covered.
若欲形成對應發光裝置1E的封裝構造200(如第7B圖所示)時，請參閱第9A及9B圖所示，則透光結構40’先形成於螢光結構20上、爾後BSS 30’形成於透光結構40’上。 If the package structure 200 corresponding to the light-emitting device 1E is to be formed (as shown in FIG. 7B), as shown in FIGS. 9A and 9B, the light-transmitting structure 40' is first formed on the fluorescent structure 20, and then the BSS 30'. Formed on the light transmissive structure 40'.
當各種封裝構造200形成後，可如第8E圖所示，將離形材料900從LED晶片10及封裝構造200下方移除，並如第8F圖所示，切割相連的該等封裝構造200，以得到相互分離的複數個發光裝置1A(或發光裝置1B至1E之其一)；亦可先切割封裝構造200後，再移除離形材料900。 After the various package structures 200 are formed, as shown in FIG. 8E, the release material 900 can be removed from under the LED wafer 10 and the package structure 200, and as shown in FIG. 8F, the connected package structures 200 are cut, In order to obtain a plurality of light-emitting devices 1A (or one of the light-emitting devices 1B to 1E) separated from each other; the package structure 200 may be cut first, and then the release material 900 may be removed.
綜合上述，本發明所揭露之發光裝置之製造方法可批次生產大量的發光裝置1A至1E，使每個發光裝置包含光形調整結構，藉此使發光裝置的光形(發光角度)得調整至所需者。 In summary, the manufacturing method of the light-emitting device disclosed in the present invention can batch-produce a large number of light-emitting devices 1A to 1E, so that each light-emitting device includes a light-shaped adjustment structure, thereby adjusting the light shape (light-emitting angle) of the light-emitting device. To the required ones.
上述之實施例僅用來例舉本發明之實施態樣，以及闡釋本發明之技術特徵，並非用來限制本發明之保護範疇。任何熟悉此技術者可輕易完成之改變或均等性之安排均屬於本發明所主張之範圍，本發明之權利保護範圍應以申請專利範圍為準。 The embodiments described above are only intended to illustrate the embodiments of the present invention, and to explain the technical features of the present invention, and are not intended to limit the scope of protection of the present invention. Any changes or equivalents that can be easily made by those skilled in the art are within the scope of the invention. The scope of the invention should be determined by the scope of the claims.
1A‧‧‧發光裝置 1A‧‧‧Lighting device
10‧‧‧LED晶片 10‧‧‧LED chip
20‧‧‧螢光結構 20‧‧‧Fluorescent structure
21‧‧‧頂部 21‧‧‧ top
211‧‧‧頂面 211‧‧‧ top surface
22‧‧‧側部 22‧‧‧ side
221‧‧‧側面 221‧‧‧ side
23‧‧‧延伸部 23‧‧‧Extension
30‧‧‧光形調整結構、BSS 30‧‧‧Light profile adjustment structure, BSS
31‧‧‧頂面 31‧‧‧ top surface
40‧‧‧透光結構 40‧‧‧Light transmission structure
D1‧‧‧垂直方向 D1‧‧‧Vertical direction
D2‧‧‧水平方向 D2‧‧‧ horizontal direction
Claims (27)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105104034A TWI583028B (en) | 2016-02-05 | 2016-02-05 | Light emitting device with beam shaping structure and manufacturing method of the same |
| US15/423,513 US10797209B2 (en) | 2016-02-05 | 2017-02-02 | Light emitting device with beam shaping structure and manufacturing method of the same |
| JP2017017728A JP6622735B2 (en) | 2016-02-05 | 2017-02-02 | LIGHT EMITTING ELEMENT HAVING BEAM-FORMING STRUCTURE AND MANUFACTURING METHOD THEREOF |
| KR1020170015622A KR102210462B1 (en) | 2016-02-05 | 2017-02-03 | Light emitting device with beam shaping structure and manufacturing method of the same |
| EP17154536.1A EP3203534B1 (en) | 2016-02-05 | 2017-02-03 | Light emitting device with beam shaping structure and manufacturing method of the same |
| EP20173969.5A EP3734675A1 (en) | 2016-02-05 | 2017-02-03 | Light emitting device with beam shaping structure and manufacturing method of the same |
| KR1020180153435A KR20180132018A (en) | 2016-02-05 | 2018-12-03 | Light emitting device with beam shaping structure and manufacturing method of the same |
| JP2019211691A JP7016467B2 (en) | 2016-02-05 | 2019-11-22 | A light emitting device provided with a beam forming structure and a method for manufacturing the same. |
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| TW105104034A TWI583028B (en) | 2016-02-05 | 2016-02-05 | Light emitting device with beam shaping structure and manufacturing method of the same |
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| US10879434B2 (en) | 2017-09-08 | 2020-12-29 | Maven Optronics Co., Ltd. | Quantum dot-based color-converted light emitting device and method for manufacturing the same |
| TWI658610B (en) * | 2017-09-08 | 2019-05-01 | Maven Optronics Co., Ltd. | Quantum-dot-based color-converted light emitting device and method for manufacturing the same |
| KR20210105892A (en) | 2018-12-27 | 2021-08-27 | 덴카 주식회사 | Phosphor substrates, light emitting substrates and lighting devices |
| KR20210105891A (en) * | 2018-12-27 | 2021-08-27 | 덴카 주식회사 | Phosphor substrates, light emitting substrates and lighting devices |
| KR102363199B1 (en) * | 2019-05-10 | 2022-02-15 | 덕산하이메탈(주) | Parallax barrier and stereoscopic display apparatus including the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP7016467B2 (en) | 2022-02-07 |
| TW201729436A (en) | 2017-08-16 |
| JP2017175118A (en) | 2017-09-28 |
| KR102210462B1 (en) | 2021-02-02 |
| JP2020053690A (en) | 2020-04-02 |
| KR20180132018A (en) | 2018-12-11 |
| JP6622735B2 (en) | 2019-12-18 |
| KR20170093735A (en) | 2017-08-16 |
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