JP7016467B2 - A light emitting device provided with a beam forming structure and a method for manufacturing the same. - Google Patents

Description

See quotes from related applications

This application is filed on February 5, 2016, Taiwan Patent Application No. 10510403, and Chinese Patent Application No. 20161008214.2, filed on February 5, 2016, claiming the priority of the Taiwanese patent application. Incorporates the entire disclosure of both applications into the present application by reference.

background

Technical Fields The present disclosure relates to light emitting devices and methods thereof, and more particularly to chip scale type packaged light emitting devices including light emitting diode (LED) semiconductor dies that generate electromagnetic radiation during operation.
Description of related technology

Recent chipscale package (CSP) type LED devices have promising advantages, so their development is receiving more and more attention. As a general example, a white light CSP type LED element as shown in FIG. 1A is usually composed of a flip-chip type LED semiconductor die 71 having a small chip scale size and a photoluminescence structure 72 covering the LED semiconductor die. Has been done. The photoluminescence structure 72 covers the four side edges of the upper surface and the edge surface of the LED semiconductor die 71, and the CSP type LED element emits light from the four side edges of the upper surface and the edge surface. There is. Therefore, the light is emitted from five surfaces of the CSP type LED element in different directions to form a five-sided light emitting light source.

Compared to leaded plastic chip carrier (PLCC) LED elements, CSP type LED elements show the following advantages. (1) Since no bonding wire and lead frame are required, the material cost is significantly reduced. (2) A lead frame is not used between the LED semiconductor die and the mounted circuit board, generally the printed circuit board (PCB), and the thermal resistance between them is further reduced. Therefore, even if the drive current is the same, the LED operating temperature is low. In other words, the light output of many CSP type LED elements can be obtained with less electrical energy. (3) Since the operating temperature is low, the LED semiconductor quantum efficiency of the CSP type LED element is high. (4) Since the form factor of the light source is very small, the degree of freedom in designing the LED device at the module level is increased. (5) Since the light emitting region of the CSP type LED element is small and close to a point light source, the optical lens design becomes easy. Since the CSP type LED element is compact, it can be designed to generate light with a small etendu with high light intensity in some projection type lighting such as a headlight of an automobile.

Although the CSP type LED element has many advantages, the five-sided light emitting type CSP type LED element for comparison has a larger viewing angle. This viewing angle is generally in the range of 140 degrees to 160 degrees depending on various geometric dimensions for a particular CSP type LED device. The viewing angle of the five-sided light emitting CSP type LED element is still much larger than the general viewing angle of about 120 degrees of the PLCC type LED element. Although the CSP type LED element having a large viewing angle is advantageous in some applications, it is not suitable for a specific application for a projection light source having a small viewing angle. For example, in the case of an edge lighting backlight device or a projection light bulb, a light source having a small viewing angle is specified to achieve high light energy transmission efficiency. Therefore, it is necessary to provide a CSP type LED element having a smaller viewing angle that meets the specifications of such an application.

An optical lens can be used with an LED element to shape its spatial emission pattern, for example to increase or decrease the viewing angle. However, such an optical lens approach is not suitable for specific spatially constrained applications. Adding more optical lenses to a CSP-type LED element not only increases manufacturing costs, but also occupies a large overall space, thus negating one of the major advantages of CSP-type LED elements, which is a small form factor.

FIG. 1B shows another type of "top light emitting" CSP type LED element that can reduce the viewing angle. This CSP type LED element is composed of a flip chip type LED semiconductor die 71, a photoluminescence structure 72, and a reflective structure 73. The photoluminescence structure 72 is arranged on the upper surface of the LED semiconductor die 71, and the reflective structure 73 covers four side edges of the edge surface of the LED semiconductor die 71. In such a structure, the light is derived from the upper surface of the CSP type LED element, that is, the light is emitted from the upper surface, so that a corresponding small viewing angle can be obtained. The viewing angle of the top light emitting type CSP type LED element for comparison is typically 120 degrees to 130 degrees. Regarding the composition material used in manufacturing the CSP type LED element shown in FIG. 1B, the reflective structure 73 is formed by mixing light-scattering particles with a polymer resin material, and the concentration of the light-scattering particles is generally high. Is higher than 30 wt% to function as a light reflector. However, the reflective structure 73 formed from this composition material is not yet sufficient as a reflector that repels the light emitted from the LED semiconductor die 71 or the photoluminescence structure 72. If the reflectance is not high enough, it is inevitable that some photons will disappear in the reflective structure 73. For example, as shown in FIG. 1C, the photon penetrates the reflective structure 73 along the optical path P and is finally absorbed at the end point P'in the reflective structure 73. Therefore, the disappearance of photons in the reflective structure 73 reduces the optical efficiency of the CSP type LED element. Further, in the manufacturing method for manufacturing the CSP type LED element shown in FIG. 1C, an additional manufacturing step of covering the four side edges of the edge surface of the LED semiconductor die 71 with a reflective material to form the reflective structure 73. Is included. If the reflective structure 73 is manufactured using a high-precision mold, the placement accuracy becomes high and the manufacturing cost increases significantly.

Overview

In view of the above defects, an improved CSP type LED device with the beam forming structure according to the present disclosure is disclosed. Adjusting the viewing angle or spatial emission pattern to suit a variety of applications without the use of inefficient reflectors that result in excessive light energy loss due to light trapping within the CSP LED device structure. Can be done. Another advantage of CSP type LED devices is that they can maintain a small form factor without increasing manufacturing costs by using an efficient manufacturing process.

In some embodiments of the present disclosure, it is an object of the present invention to provide a CSP type LED element and a method for manufacturing the same. By properly designing the beam forming structure (BSS), the viewing angle of this CSP type LED element is higher than that of the comparative 5-sided light emitting CSP type LED element having a viewing angle of 140 degrees to 160 degrees. The form factor remains substantially the same as it decreases from about 120 degrees to about 140 degrees. The CSP type LED element can be manufactured by using a relatively efficient and inexpensive manufacturing process. According to another embodiment of the BSS according to the present disclosure, the viewing angle of the CSP type LED element is expanded to more than about 160 degrees as compared with the comparison 5-sided light emitting type CSP type LED, and the specifications for a specific application can be obtained. Can be met.

In order to achieve the above object, the CSP type LED element having a smaller viewing angle according to some embodiments of the present disclosure includes an LED semiconductor die, a photoluminescence structure and a beam forming structure. The LED semiconductor die is a flip-chip LED semiconductor die having an upper surface, a substantially parallel and opposed lower surfaces, an edge surface, and a set of electrodes. The photoluminescence structure is formed so as to cover the upper surface and the edge surface of the LED semiconductor die, and the BSS is intentionally arranged so as to cover the edge portion of the photoluminescence structure. BSS is made from a composition material composed of relatively low concentration (eg, about 30 wt% or less, about 20 wt% or less, or about 10 wt% or less) light scattering particles dispersed in a polymeric resin material. Therefore, a part of the light emitted from the four side edges of the LED semiconductor die and the four side edges of the photoluminescence structure and traveling in the BSS in the substantially horizontal direction can be scattered and turned in the almost vertical direction. .. As a result, the light intensity in the substantially vertical direction is increased, and the viewing angle of the entire CSP type LED element is reduced.

In order to achieve the above object, the CSP type LED element having a larger viewing angle according to some embodiments of the present disclosure includes an LED semiconductor die, a photoluminescence structure, a supernatant light transmitting layer and a BSS. The LED semiconductor die is a flip-chip LED semiconductor die having an upper surface, a substantially parallel and opposed lower surfaces, an edge surface, and a set of electrodes. The photoluminescence structure is formed so as to cover the upper surface and the edge surface of the LED semiconductor die. The supernatant light transmitting layer is intentionally arranged on the photoluminescence structure so that the BSS covers the upper surface of the supernatant light transmitting layer. BSS is produced from a composition material composed of light scattering particles having a relatively low concentration (eg, about 30 wt% or less, about 20 wt% or less, or about 10 wt% or less) dispersed in a polymer resin material. Therefore, the viewing angle of the entire CSP type LED element can be increased by scattering the partial light emitted from the LED semiconductor die and the photoluminescence structure in the substantially vertical direction and turning it in the substantially horizontal direction.

To achieve the above object, another monochromatic CSP type LED element with a small viewing angle according to some embodiments of the present disclosure comprises an LED semiconductor die and a BSS. The LED semiconductor die is a flip-chip LED semiconductor die having an upper surface, a substantially parallel and opposed lower surfaces, an edge surface, and a set of electrodes. The BSS covers at least the edge of the LED semiconductor die. BSS is made from a composition material composed of relatively low concentration (eg, about 30 wt% or less, about 20 wt% or less, or about 10 wt% or less) light scattering particles dispersed in a polymeric resin material. Therefore, the viewing angle of the entire CSP type LED element can be reduced by scattering the partial light emitted from the LED semiconductor die in the substantially horizontal direction and turning it in the substantially vertical direction.

In order to achieve the above object, the method for manufacturing a CSP type LED element according to some embodiments of the present disclosure includes the following. That is, 1) a plurality of LED semiconductor dies are arranged on a release layer to form an array of LED semiconductor dies, and 2) a plurality of connected package structures are formed on the array of LED semiconductor dies. If the beam forming structure is formed as part of the package structure, 3) multiple package structures are individually separated, in which case the release layer can be removed before or after the multiple package structures are individually separated. Is.

Accordingly, the present disclosure provides at least the following advantages: That is, since the BSS of the CSP type LED element has light scattering particles having a relatively low concentration (for example, about 30 wt% or less), the partial light emitted from the LED semiconductor die and / or the photoluminescence structure passes through the BSS. It is scattered in another direction as it travels. Therefore, the light intensity in the original traveling direction decreases, and the viewing angle of the CSP type LED element also changes accordingly. Appropriate design of the BSS will reduce the disappearance of excess photons in the reflective structure as would occur in a comparative top light emitting CSP type LED device. As a result, the overall luminous efficiency can be improved.

As an example, if the BSS is intentionally arranged so as to surround the side edge of the CSP type LED element, the partial light that originally travels in the substantially horizontal direction of the LED semiconductor die is scattered in the almost vertical direction while traveling in the BSS. The light that originally travels in a substantially vertical direction may not be affected by the scattering effect of the BSS. Therefore, while the intensity of the light traveling in the substantially horizontal direction of the CSP type LED element decreases, the intensity of the light traveling in the substantially vertical direction of the CSP type LED element increases, so that the viewing angle becomes smaller as a whole. In other words, the CSP type LED element according to some embodiments of the present disclosure can obtain a smaller viewing angle of about 120 degrees to about 140 degrees.

As another example, when the BSS is arranged above the LED semiconductor die with a spacer in between, the intensity of light that originally travels in the substantially horizontal direction of the CSP type LED element increases, and the light intensity originally increases in the substantially vertical direction of the CSP type LED element. The intensity of the traveling light decreases. In other words, the overall viewing angle can be expanded to, for example, about 160 degrees or about 170 degrees.

In addition, the BSS of some embodiments of the present disclosure can be manufactured using a well-controlled but inexpensive manufacturing process. Further, the BSS is incorporated in the CSP type LED element without causing an increase in the geometrical outer shape of the entire element. Therefore, by adjusting the viewing angle of the CSP type LED element, it becomes sufficiently suitable for various applications.

Other aspects and embodiments of the present disclosure are also contemplated. The above overview and the detailed description below do not limit this disclosure to any particular embodiment, but merely describe some embodiments of the present disclosure.

and It is a schematic cross-sectional view which shows the CSP type LED element for comparison. It is a schematic cross-sectional view which shows the light extinction mechanism of the CSP type LED element for comparison. It is a 3D schematic perspective view which shows the CSP type LED element by one Embodiment of this disclosure. It is a schematic cross-sectional view which shows the CSP type LED element by one Embodiment of this disclosure. FIG. 2B is a schematic cross-sectional view showing a light beam turning mechanism in the BSS of the CSP type LED element shown in FIG. 2B. and It is a schematic cross-sectional view which shows the embodiment of the modification of the CSP type LED element shown in FIG. 2B. It is a schematic cross-sectional view which shows the CSP type LED element by another embodiment of this disclosure. It is a schematic cross-sectional view which shows the CSP type LED element by another embodiment of this disclosure. It is a schematic cross-sectional view which shows the CSP type LED element by another embodiment of this disclosure. It is a 3D schematic perspective view which shows the CSP type LED element by another embodiment of this disclosure. It is sectional drawing which shows the CSP type LED element by another embodiment of this disclosure. and and and and and and and It is a schematic diagram which shows the manufacturing process which manufactures the CSP type LED element by various embodiments of this disclosure.

Detailed explanation

Definitions The following definitions apply to some of the technical aspects described with respect to some embodiments of the invention. These definitions may be expanded in the same manner herein.

Singular terms as used herein, whether unspecified or specified, shall include multiple objects unless otherwise specified in context. Thus, for example, the description of one layer may include a plurality of layers unless otherwise specified.

As used herein, the term "set" means a collection of one or more components. Thus, for example, a set of layers may include a single layer or a plurality of layers. A set of components may mean a plurality of members in a set. The components of a set may be the same or different. In some cases, each set of components may contain one or more common properties.

As used herein, the term "adjacent" means close or adjacent. Adjacent components may be separated from each other or may actually be in direct contact with each other. In some examples, adjacent components may be connected to each other or integrally formed with each other. In some embodiments, a component provided "above" or "above" another component is when the former element is provided directly on the latter element (eg, directly). It may also include the case where it is in physical contact) and the case where one or more intervening elements are provided between the former element and the latter element. In some embodiments, the component provided "below" another component is when the former component is provided below the latter component (eg, directly physically). It may include the case where it is in contact with each other) and the case where one or more intervening elements are provided between the former component and the latter component.

As used herein, the terms "connect," "connected," and "connect" mean operational concatenation or association. The connected components may be directly linked to each other, or may be indirectly linked to each other, for example via another set of components.

As used herein, the terms "about," "substantially," and "substantially" mean the degree or degree to be considered. When used in connection with an event or situation, the term is typical of the manufacturing operations described herein, eg, where the event or situation almost occurs, in addition to the case where the event or situation definitely occurs. It may include the case of proximity that occupies a certain permissible level. For example, when used in connection with numerical values, these terms may include a range of numerical values within ± 10%, eg, within ± 5%, within ± 4%, within ± 3%, ±. Includes a range of variation within 2%, within ± 1%, within ± 0.5%, within ± 0.1%, or within ± 0.05%. For example, if any deviation between the two surfaces is 50 μm or less, for example 40 μm or less, 30 μm or less, 20 μm or less, 10 μm or less, 5 μm or less, 1 μm or less, or 0.5 μm or less, the two surfaces are substantially the same. It is considered to be high or aligned.

As used herein with respect to photoluminescence, the term "efficiency" or "quantum efficiency" refers to the ratio of the number of output photons to the number of input photons.

As used herein, the term "size" means characteristic dimensions. When the object is spherical (for example, particles), the size of the object may mean the diameter of the object. When the object is non-spherical, the size of the object may mean the average value of various orthogonal dimensions of the object. Therefore, for example, the size of an ellipsoidal object may indicate the average value of the major axis and the minor axis of the object. When referring to a set of objects having a particular size, the objects are considered to have several sizes distributed around the particular size. Thus, as used herein, the size of a set of objects may mean the general size of a size distribution, such as an average, median, or peak value of size. ..

FIG. 2A is a 3D schematic perspective view of the CSP type LED element 1A according to the embodiment of the present disclosure, and FIG. 2B is a schematic cross-sectional view thereof. The CSP type LED element 1A includes an LED semiconductor die 10, a photoluminescence structure 20, a beam forming structure (BSS) 30, and a supernatant light transmitting layer 40. The package structure 200 includes a photoluminescence structure 20, a BSS 30, and a supernatant light transmitting layer 40. The detailed technical contents are described below.

The LED semiconductor die 10 is preferably a flip-chip type LED semiconductor die, which has an upper surface 11, a lower surface 12, an edge surface 13, and a set of electrodes 14. The upper surface 11 and the lower surface 12 are formed substantially parallel to each other and face each other. The edge surface 13 is formed between the upper surface 11 and the lower surface 12, and connects the outer edge of the upper surface 11 to the outer edge of the lower surface 12.

A set of electrodes 14 or a plurality of electrodes are arranged on the lower surface 12. When electrical energy is applied to the LED semiconductor die 10 through a set of electrodes 14, electroluminescence is generated. For this particular structure, the active region that produces electroluminescence is usually located near the lower position (closer to the bottom surface 12) of the flip-chip LED semiconductor die 10. Therefore, the light generated by the active region is emitted outward through the upper surface 11 and the edge surface 13. Therefore, the flip-chip type LED semiconductor die 10 emits light from the upper surface 11 and the edge surface 13 (four peripheral side edge portions), that is, constitutes a five-sided light emitting LED semiconductor die.

The main function of the photoluminescence structure 20 is to convert the wavelength of light emitted from the top surface 11 and the edge surface 13 of the LED semiconductor die 10. Specifically, when the blue light emitted from the LED semiconductor die 10 passes through the photoluminescence structure 20, a part of the blue light has a long wavelength and energy due to the photoluminescence material contained in the photoluminescence structure 20. It can be down-converted to low light. Therefore, the photoluminescence material and the light of different wavelengths emitted by the LED semiconductor die 10 can be mixed at a predetermined ratio to generate light of a desired color, for example, white light of various color temperatures.

With respect to the structure of element 1A, the photoluminescence structure 20 further comprises an upper portion 21, an edge portion 22, and an extension portion 23. The upper portion 21 is formed so as to cover the upper surface 11 of the LED semiconductor die 10 and down-convert the light emitted from the upper surface 11 to a long wavelength, and the edge portion 22 covers the edge surface 13 of the LED semiconductor die 10. It is formed so as to down-convert the light emitted from the edge surface 13 to a long wavelength. The extension portion 23 extends outward from the edge portion 22. Both the edge portion 22 and the extension portion 23 are formed so as to surround the LED semiconductor die 10, and the thickness of the extension portion 23 is preferably thinner than the thickness of the LED semiconductor die 10. As shown in FIG. 2B, the upper portion 21 has an upper surface 211 and the edge portion 22 has an edge surface 221. The extension portion 23 has an upper surface 231.

The BSS 30 is arranged so as to surround the photoluminescence structure 20 so that the viewing angle of the CSP type LED element 1A can be reduced by the BSS 30. Conventionally, the viewing angle of an LED element is generally defined as the full width at half maximum (FWHM) of the spatial radiation pattern, and FWHM is the "width" of the spatial radiation pattern when the light intensity is equal to half (half width) of the peak value. "(Or angle).

Specifically, when the CSP type LED element does not include the BSS 30, the light transmitted through the photoluminescence structure 20 generally forms a radiation pattern with a viewing angle of 140 to 160 degrees. In contrast, when the BSS30 is incorporated in a CSP type LED element, the viewing angle is less than about 140 degrees, for example between about 120 degrees and about 140 degrees.

More specifically, the BSS 30 covers both the edge surface 221 of the edge portion 22 of the photoluminescence structure 20 and the top surface 231 of the extension portion 23. Modifications of the BSS 30 can be achieved using different process conditions. For example, as shown in FIGS. 2A and 2B, the top surface 31 of the BSS 30 is at or aligned with substantially the same height as or aligned with the top surface 211 of the upper portion 21 of the photoluminescence structure 20 and is photoluminescent. The upper portion 21 of the sense structure 20 is not covered by the BSS 30 and is exposed.

For other modifications, as shown in FIG. 3A, the BSS 30 may extend slightly over the upper surface 211 of the upper portion 21 of the photoluminescence structure 20 to cover the upper surface. As shown in FIG. 3B, the upper surface 31 of the BSS 30 is slightly lower than the upper surface 211 of the upper portion 21 of the photoluminescence structure 20 so as not to cover the upper portion 21 and the edge portion 22 is partially exposed from the BSS 30. You may try to do it. In other words, the BSS 30 formed by surrounding the edge portion 22 of the photoluminescence structure 20 selectively and partially covers the upper portion 21 or the edge portion 221 of the edge portion 22. You may.

Referring to FIGS. 2A and 2B, the BSS 30 is manufactured using the polymer resin material 301 and the light scattering particles 302 dispersed in the polymer resin material 301 to change the traveling direction of light. The light scattering particles 302 may be selected from, for example, one of TiO ₂ , BN, SiO ₂ , Al ₂ O ₃ , other metals, non-metal oxides, or any combination thereof. The polymer resin material 301 used for binding the light scattering particles 302 is preferably light transmissive. The polymer resin material 301 may be selected from, for example, one of a thermosetting material consisting of silicone, epoxy or rubber, or any combination thereof.

If the light scattering particles 302 are excessively dispersed in the BSS 30 at a high concentration, it becomes difficult for the light to pass through the BSS 30. Therefore, the light scattering particles 302 in the BSS 30 have a weight percentage of wt% of about 30 wt% or less, about 25 wt% or less, about 20 wt% or less, about 15 wt% or less, or about 10 wt% or less. That is, the light scattering particles 302 contained in the BSS 30 have a relatively low concentration.

In order to facilitate the production, it is desirable to uniformly disperse the light scattering particles 302 in the thermosetting polymer resin material 301. However, it will be appreciated that during the manufacturing process, the light scattering particles 302 may not be uniformly dispersed in the polymeric resin material 301 due to gravitational effects or other factors. In another embodiment, the light scattering particles 302 may be intentionally introduced to increase the concentration at a particular position in the polymeric resin material 301. For example, when the upper portion 21 and the edge portion 22 of the photoluminescence structure 20 are both arranged so as to be covered with the polymer resin material 301, the light scattering particles 302 surround the edge portion 22 of the photoluminescence structure 20. It is desirable to increase the concentration at the position and decrease the concentration at the position covering the upper portion 21 of the photoluminescence structure 20. Therefore, the light emitted from the upper portion 21 does not have a light scattering effect as strong as the light emitted from the edge portion 22 of the photoluminescence structure 20.

As shown in FIGS. 2A and 2B, the supernatant light transmitting layer 40 is arranged on the BSS 30 to cover the upper surface 31 of the BSS 30 and serves as an environmental protection layer and a flattening layer of the photoluminescence structure 20 and the BSS 30. .. If the BSS 30 is not intended to cover the upper portion 21 of the photoluminescence structure 20, then as shown in FIGS. 2B and 3B, the supernatant light transmissive layer 40 is the upper surface 211 of the photoluminescence structure 20 and the BSS 30. The upper surface 31 of the photoluminescence structure 20 can be simultaneously covered, and the upper surface 211 of the photoluminescence structure 20 and the upper surface 31 of the BSS 30 can be adjacent to each other.

FIG. 2C is a schematic cross-sectional view of the CSP type LED element 1A, showing how the viewing angle of the CSP type LED element 1A changes depending on the beam forming mechanism.

The BSS 30 formed so as to cover the edge portion 22 of the photoluminescence structure 20 has a relatively low concentration (for example, a concentration not exceeding about 30 wt%) of light-scattering particles 302, and thus emits light from the LED semiconductor die 10. Then, the light beam L passing through the photoluminescence structure 20 in the substantially horizontal direction D2 penetrates the BSS 30. Within the BSS 30, a portion (L1) of the light beam L continues to travel in its original direction (eg, substantially horizontal D2) and eventually leaks out of the edge 32 of the BSS 30. Another part (L2) of the light beam L changes its traveling direction significantly, is turned in the substantially vertical direction D1 by the light scattering particles 302, and finally emits outward from the upper surface 31 of the BSS 30.

In other words, after the light beam L traveling in the original substantially horizontal direction D2 passes through the BSS 30, a part L1 of the light beam continues to travel outward in the almost horizontal direction D2, and another part of the light beam L2 It scatters in the almost vertical direction D1. As a result, the intensity of the light beam emitted in the substantially horizontal direction D2 of the CSP type LED element 1A decreases, and the intensity of the light beam emitted in the substantially vertical direction D1 of the CSP type LED element 1A increases. As described above, since the light beam emitted from the CSP type LED element 1A has a high intensity emitted in the substantially vertical direction D1, the viewing angle is smaller than that of the comparative CSP type LED element that does not use the BSS. Further, since the BSS 30 has a light scattering particle 302 having a relatively low concentration, the probability that photons disappear in the BSS 30 is low, and the luminous efficiency of the entire CSP type LED element 1A is improved.

In addition, two design parameters for the BSS 30 that affect the viewing angle, such as the weight percentage of the light scattering particles 302 and the geometric dimensions of the BSS 30, are illustrated in detail in the following paragraphs.

The first design parameter of BSS is the scattering particle concentration. The higher the concentration of the BSS 30 (quantified by wt%) of the light scattering particles 302, the smaller the viewing angle of the CSP type LED element 1A tends to be. As shown in the measurement results summarized in Table 1 below, when the concentration of the light scattering particles 302 increases from about 1.5 wt% (element T1 of the embodiment) to about 2.5 wt% (element T2 of the embodiment). The viewing angle is reduced from about 128 degrees (element T1 of the embodiment) to about 126 degrees (element T2 of the embodiment), and the other element parameters remain the same. The higher the concentration of the light scattering particles 302 in the BSS 30, the higher the probability that the light beam L will obtain a high light scattering effect when passing through the BSS 30, and therefore the higher the probability that the light beam L will scatter and turn in a different traveling direction. It will be understood that it will be. Therefore, the light intensity in the substantially horizontal direction D2 is lowered, the light intensity in the substantially vertical direction D1 is increased, and the viewing angle of the entire CSP type LED element 1A is reduced.

In some embodiments, the weight percentage of the light scattering particles 302 is preferably lower than about 10% and higher than about 0.1%, which causes the CSP type LED element 1A to have about 120 degrees to about 140 degrees. A light beam having a viewing angle of can be obtained.

For other design elements, two parameters are specified to characterize the geometric dimensions of the BSS 30. As shown in FIG. 2C, the first characteristic dimension W is defined as the horizontal distance from the edge surface 221 of the photoluminescence structure 20 to the edge surface 32 of the BSS 30, and the second characteristic dimension T is from the lower surface 33. It is defined as the vertical distance to the upper surface 31 of the BSS 30. Next, the aspect ratio can be further defined as a value obtained by dividing the first characteristic dimension W by the second characteristic dimension T, that is, W / T. It will be understood that the larger the aspect ratio W / T, the smaller the viewing angle. Comparing the measurement results of the element T1 of the embodiment and the element T3 of the embodiment summarized in Table 1, the viewing angle is reduced from about 128 degrees to about 124 degrees, and the aspect ratio W / T is about 180 μm / 150 μm to about 250 μm. Increased to / 150 μm, other parameters of BSS remain the same. When the aspect ratio W / T of the BSS 30 becomes large, the light beam L traveling substantially along the horizontal direction D2 has an increased light scattering effect in the BSS 30. When the light beam L is scattered in the substantially vertical direction D1, the distance until the light beam L travels in the substantially vertical direction and leaks from the BSS 30 becomes short. Therefore, there is almost no light scattering effect on the light beam L in the substantially vertical direction D1. Therefore, while the light intensity in the substantially horizontal direction D2 decreases, the light intensity in the substantially vertical direction D1 increases, so that the viewing angle of the entire CSP type LED element 1A becomes smaller. In some embodiments, the aspect ratio W / T can be greater than about 1, eg, about 1.1 or greater, about 1.2 or greater, about 1.3 or greater, about 1.4 or greater, or about 1. It may grow to 5.5 or more, and even to about 1.8 or more or about 2 or more.

Further, in addition to the BSS 30, the supernatant light transmitting layer 40 also plays a role of forming the viewing angle of the CSP type LED element 1A. The CSP type LED element 1A may optionally have the supernatant light transmitting layer 40, whereby the light traveling in the substantially vertical direction D1 is refracted as it passes through the supernatant light transmitting layer 40, and the entire field of view is obtained. The corners get bigger. According to one of the measurement results, the CSP type LED element 1A having the supernatant light transmitting layer 40 shows a viewing angle of about 125 degrees, and the CSP type LED element 1A not including the supernatant light transmitting layer 40 (not shown) is about. It shows a viewing angle of 120 degrees.

The supernatant light transmitting layer 40 can improve the light extraction efficiency or the luminous efficiency of the CSP type LED element 1A in addition to forming the viewing angle. According to one of the measurement results, the CSP type LED element 1A having the supernatant light transmitting layer 40 has a luminous efficiency about 5% higher than that of the CSP type LED element 1A not including the supernatant light transmitting layer 40. Further, the supernatant light transmitting layer 40 may be manufactured by using a polymer resin material having a refractive index (RI) lower than that of the photoluminescence structure 20 and the BSS 30. Thereby, appropriate RI matching is performed, and the light energy caused by the internal total reflection generated at the interface between various media such as the photoluminescence structure 20, the BSS 30, the supernatant light transmitting layer 40 and the ambient environment (air). The loss can be reduced. Therefore, the light extraction efficiency and the luminous efficiency of the CSP type LED element 1A can be further improved.

Therefore, the supernatant light transmitting layer 40 can be incorporated into the CSP type LED element 1A according to a desired viewing angle and overall luminous efficiency.

Further, according to the embodiment of the modification shown in FIGS. 2B, 3A and 3B, the BSS 30 may cover the photoluminescence structure 20 in various ranges to form the viewing angle of the CSP type LED element 1A. can.

Each of the above paragraphs is a detailed description of an embodiment relating to the CSP type LED element 1A. A detailed description of other embodiments of the CSP type LED device according to the present disclosure will be described below. It will be appreciated that some of the detailed descriptions of the features and advantages found in the following embodiments of the light emitting device are similar to those of the CSP type LED device 1A and are therefore omitted for brevity.

FIG. 4 is a schematic cross-sectional view of the CSP type LED element 1B according to another embodiment of the present disclosure. The difference between the CSP type LED element 1B and the CSP type LED element 1A is that the photoluminescence structure 20 of the CSP type LED element 1B does not include the extension portion 23 of the CSP type LED element 1A. Therefore, whether the lower surface 33 of the BSS 30 is substantially the same height as or aligned with the lower surface 222 of the edge portion 22 and is substantially the same height as the lower surface 12 of the LED semiconductor die 10. Or it may be aligned with this. In addition, when the photoluminescence structure 20 is manufactured by performing a molding step, the thickness of the photoluminescence structure 20 of the CSP type LED element 1B is the thickness of the photoluminescence structure 20 of the CSP type LED element 1A. It can be bigger than that.

FIG. 5 is a schematic cross-sectional view of the CSP type LED element 1C according to another embodiment of the present disclosure. The difference between the CSP type LED element 1C and the above-mentioned CSP type LED elements 1A and 1B is that the CSP type LED element 1C is further sandwiched between the photoluminescence structure 20 and the LED semiconductor die 10. Is a point that includes. Specifically, the soft buffer layer 50 covers the upper surface 11 and the edge surface 13 of the LED semiconductor die 10. After that, the BSS 30 is formed as a flattening layer, covers the edge portion 22 of the photoluminescence structure 20, and optionally covers the upper portion 21 of the photoluminescence structure 20.

The soft buffer layer 50 has the following technical advantages. That is, 1) the adhesion strength between the photoluminescence structure 20 and the LED semiconductor die 10 is improved, and 2) the internal stress caused by the mismatch of the thermal expansion coefficients between the components in the CSP type LED element 1C is reduced. 3) Subsequent production of the photoluminescence structure 20 is facilitated, and a substantially shape-adaptive coating layer is formed. A detailed technical description of the soft buffer layer 50 is disclosed in US Patent Application No. 15 / 389,417 (also published as Taiwan Patent Application No. 104144441). The entire disclosure of this publication is incorporated herein by reference.

FIG. 6 is a schematic cross-sectional view of the CSP type LED element 1D according to another embodiment of the present disclosure. The difference between the CSP type LED element 1D and the above-mentioned CSP type LED elements 1A, 1B and 1C is that the CSP type LED element 1D does not include the photoluminescence structure 20 and the BSS 30 directly touches the edge surface 13 of the LED semiconductor die 10. It is a point that covers and joins the LED semiconductor die 10 and optionally covers the upper surface 11 of the LED semiconductor die 10. Since the photoluminescence structure 20 is not included, the CSP type LED element 1D can output a monochromatic light beam such as red, green, blue, infrared rays, and ultraviolet rays. With this particular structure, the CSP type LED element 1D can obtain a light beam having a smaller viewing angle.

As a technical feature common to the above-mentioned CSP type LED elements 1A to 1D, by arranging the BSS 30 mainly on the side portion in the element structure, a part of the light beam is turned from the almost horizontal direction to the almost vertical direction. The viewing angle becomes smaller. In another embodiment of the present disclosure, the CSP type LED element 1E arranges the BSS 30'at a distance above both the LED semiconductor die 10 and the photoluminescence structure 20 so that a part of the light beam is substantially vertical. Increase the viewing angle by turning from the direction to almost the horizontal direction.

FIG. 7A is a 3D schematic perspective view of the CSP type LED element 1E, and FIG. 7B is a schematic cross-sectional view of the element 1E. Like the CSP type LED element 1A, the CSP type LED element 1E also includes an LED semiconductor die 10, a photoluminescence structure 20, a beam forming structure (BSS) 30'and a supernatant light transmitting layer 40'. For the detailed technical contents of each component of the CSP type LED element 1E, the description regarding the corresponding component of the CSP type LED element 1A will be referred to, but the arrangement configuration of the BSS 30'and the supernatant light transmitting layer 40' , It will be understood that the configuration is different from that of the CSP type LED element 1A.

Specifically, the supernatant light transmitting layer 40'is formed as a flattening layer laminated on the photoluminescence structure 20 and covers the upper part 21, the edge part 22 and the extension part 23 of the photoluminescence structure 20. ing. As shown in FIG. 7B, the supernatant light transmitting layer 40'functions as a flattening layer and a spacer layer sandwiched between the BSS 30'and the photoluminescence structure 20. The thickness of the BSS 30'is preferably substantially uniform and substantially completely or selectively covers a portion of the top surface 41 of the supernatant light transmitting layer 40'.

BSS30'contains a relatively low concentration of light scattering particles 302, the concentration of which does not exceed about 30 wt%, does not exceed about 25 wt%, does not exceed about 20 wt%, does not exceed about 15 wt%, or is about. It does not exceed 10 wt%, preferably about 0.1 wt% to about 10 wt%. According to this particular embodiment, the light beam L, which either the LED semiconductor die 10 emits light directly or is down-converted by the photoluminescence structure 20 and travels in the substantially vertical direction D1, can partially enter the BSS 30'. When entering the BSS 30', a part of the light beam L does not change much in the traveling direction due to the light scattering effect, as shown as the light beam L1 in FIG. 7B. Another part of the light beam L shown as the light beam L2 in FIG. 7B is scattered in the substantially horizontal direction D2 and finally emitted outward from the edge surface of the BSS 30'.

As a result, the intensity of the light beam traveling in the substantially horizontal direction D2 of the CSP type LED element 1E increases, and the intensity of the light beam traveling in the substantially vertical direction D1 of the CSP type LED element 1E decreases. Therefore, the light beam L emitted by the CSP type LED element 1E exhibits a larger viewing angle than the comparative CSP type LED element that does not include the BSS 30'. For example, the viewing angle can be greater than about 160 degrees and, for example, can be expanded to a range greater than about 160 degrees to about 180 degrees. According to an example of the measurement result, the viewing angle of the CSP type LED element 1E having the BSS 30'formed on the supernatant light transmitting layer 40'is about 170 degrees, and the comparative CSP type LED element not including the BSS 30'(shown in the figure). The viewing angle is 140 degrees. Therefore, the BSS 30'ensures the specific application condition of expanding the viewing angle of the CSP type LED element 1E to specify a larger viewing angle.

Next, a manufacturing method for manufacturing some embodiments of the CSP type LED element according to the present disclosure will be described. The manufacturing methods for manufacturing the CSP type LED elements 1A to 1E are similar although the order is different. It will be understood that the detailed description of the embodiments of the modified examples of the manufacturing method are partially similar, and thus the description is omitted to simplify the description.

8A-8F show a manufacturing method for manufacturing a CSP type LED element according to some embodiments of the present disclosure. This manufacturing method includes the following three main manufacturing steps. That is, 1) a plurality of LED semiconductor dies 10 are arranged to form an array on the release layer 900, and 2) a package sheet layer containing a plurality of package structures 200 is formed on the array of LED semiconductor dies 10. 3) The package sheet layer is individually separated to form a plurality of CSP type LED elements. The technology of this manufacturing method will be described in more detail below.

In the first main manufacturing stage, an array of LED semiconductor dies is formed. As shown in FIG. 8A, the release layer 900 may be manufactured first, and the release layer 900 may be placed on a carrier substrate (not shown) such as a silicon substrate, a glass substrate, or a metal substrate. Next, a plurality of LED semiconductor dies 10 are arranged on the release layer 900 to form an array 10 of LED semiconductor dies with a substantially constant pitch length. Examples of the release layer 900 include an ultraviolet (UV) light release tape, a heat release tape, and the like. It is desirable to arrange each set of electrodes 14 of the array of LED semiconductor dies 10 and press them strongly to embed them in the soft mold release layer 900. This could protect a set of electrodes 14 from contamination in subsequent manufacturing processes.

In the second main manufacturing stage, the package sheet layer is formed. Next, as shown in FIGS. 8B to 8D, a package sheet layer including the plurality of package structures 200 is formed to cover the array of the LED semiconductor dies 10. The manufacturing process for forming the package sheet layer on the LED semiconductor die 10 will be described in detail below.

As shown in FIG. 8B, a plurality of photoluminescence structures 20 are formed on an array of LED semiconductor dies 10, and the edge portion 22 of each photoluminescence structure 20 covers the edge surface 13 of the LED semiconductor die 10. The upper portion 21 of the photoluminescence structure 20 covers the upper surface 11 of the LED semiconductor die 10. Further, the photoluminescence structure 20 may include an extension portion 23 that extends outward from the edge portion 22 and covers the surface of the release layer 900. Desirably, the photoluminescence structure 20 is formed by the method disclosed in US Patent Application Publication No. US2010 / 0119839, and one or more layers of the photoluminescence material and the polymer resin material are sequentially laminated to form a photo. It is also possible to form the luminescence structure 20. As described above, the photoluminescence structure 20 formed by this method can have a multi-layer structure. The entire technical content of the US Patent Application Publication is incorporated here by citation.

Next, as shown in FIG. 8C, a flattening layer with the beam forming structure (BSS) 30 is formed to cover the edge portion 22 and the upper portion 21 of the photoluminescence structure 20. Alternatively, during the manufacturing process of the BSS 30, the BSS 30 may be set so as not to cover the upper portion 21 of the photoluminescence structure 20 to form the embodiment of the CSP type LED element 1A shown in FIGS. 2A and 2B. .. Optionally, the BSS 30 is manufactured so that its upper surface is lower than the upper surface 211 of the upper portion 21 to partially expose the edge surface 221 of the photoluminescence structure 20 to partially expose the CSP type LED element 1A shown in FIG. 3B. May form another embodiment of.

Regarding the manufacturing method for manufacturing BSS30, it is desirable that the composition material for manufacturing BSS30 is formed by dispersing the light scattering particles 302 in the polymer resin material 301. For example, the composition material may be further diluted with an organic solvent such as octane, xylene, acetate, ether, toluene to reduce the viscosity. The diluted, relatively low-viscosity composition material may be coated on the photoluminescence structure 20 using a manufacturing method such as spray coating. Due to the low viscosity, as shown in FIG. 8C, the composition material flows to form a flattening layer on the photoluminescent structure 20 having a top surface of substantially the same height. Further, the composition material of BSS 30 may be formed by another production method, for example, a dispensing method, a printing method, a molding method, or the like. Finally, heat or UV curing is used to solidify the BSS 30.

Although the BSS 30 is not directly adjacent to the LED semiconductor die 10, the outside of the LED semiconductor die 10 is either still covered or separated by the BSS 30 with a photoluminescence structure 20 in between. It is protected. In other words, the BSS 30 is arranged along the optical path of the LED semiconductor die 10. Therefore, not only the light beam emitted from the photoluminescence structure 20 but also the light beam emitted by the LED semiconductor die 10 is formed by the BSS 30.

Next, as shown in FIG. 8D, a supernatant light transmitting layer 40 is formed to cover the photoluminescence structure 20 and / or the BSS 30. The supernatant light-transmitting layer 40 is preferably formed using a substantially transparent polymeric resin material, and by appropriate manufacturing methods such as spray coating, spin coating, molding, dispensing, etc., the photoluminescence structure 20 and / Alternatively, it can be coated on BSS30. The polymer resin material is then solidified using heat or UV curing.

By using the above manufacturing process, a package sheet layer including a plurality of package structures 200 for manufacturing the embodiment of the CSP type LED element 1A is formed, and even after the above manufacturing process is completed, the package structures 200 are connected to each other. Will remain as it was. Modifications of some manufacturing methods for forming various package structures 200 corresponding to other embodiments of the CSP type LED device according to the present disclosure will be described below.

If it is not desirable to provide the supernatant light transmitting layer 40 in the package structure 200, the manufacturing process for forming the supernatant light transmitting layer 40 shown in FIG. 8D may be omitted. This makes it possible to obtain a CSP type LED element that does not include the supernatant light transmitting layer 40.

When the package structure 200 corresponding to the embodiment of the CSP type LED element 1B shown in FIG. 4 is specified, the manufacturing process for forming the photoluminescence structure 20 shown in FIG. 8B is an alternative to, for example, a molding method or a printing method. It can be realized by using a conventional manufacturing method. Thereby, the photoluminescence structure 20 including the extension portion 23 can be manufactured, and therefore the BSS 30 is formed so as to cover the release layer 900 in the next manufacturing step as shown in FIG. 8C.

When the package structure 200 corresponding to the embodiment of the CSP type LED element 1C shown in FIG. 5 is specified, as shown in FIG. 8A, when the manufacturing process for arranging the LED semiconductor die 10 is completed, first, the soft buffer layer It is desirable to form 50 by spray coating. Then, after the manufacturing process shown in FIG. 8B, the photoluminescence structure 20 is formed to cover the soft buffer layer 50.

When the package structure 200 corresponding to the embodiment of the monochromatic CSP type LED element 1D shown in FIG. 6 is specified, the manufacturing process for forming the photoluminescence structure 20 shown in FIG. 8B may be omitted. In the subsequent manufacturing process shown in FIG. 8C, the BSS 30 can be formed so as to directly cover the edge surface 13 of the LED semiconductor die 10, and optionally further so as to cover the upper surface 11 of the LED semiconductor die 10. be able to.

As shown in FIG. 7B, when the package structure 200 corresponding to the embodiment of the CSP type LED element 1E having a larger viewing angle is specified, the manufacturing process shown in FIG. 8B (formation of the photoluminescence structure layer 20). , The manufacturing step shown in FIG. 9A (formation of the supernatant light transmitting layer 40') and the manufacturing step shown in FIG. 9B (formation of the remote BSS layer 30') can be sequentially performed.

In the third main manufacturing stage, the package sheet layer is individually separated. After forming the desired package structure 200 as a sheet layer in the second main manufacturing step, the release layer 900 may be removed as shown in FIG. 8E. Next, the package sheet layer containing the plurality of package structures 200 is individually separated as shown in FIG. 8F. As a result, a plurality of CSP type LED elements 1A to 1E can be obtained. It will be appreciated that the release layer 900 can be removed after performing the individual separation step.

In view of the above, by disclosing some modifications of the embodiment of the manufacturing method for manufacturing various CSP type LED elements incorporating the beam forming structures of various embodiments, the viewing angle of the CSP type LED element is disclosed. Can be properly molded to meet the specifications of various applications. In addition, each of the disclosed methods can be sufficiently applied to a batch type mass production process.

Although the present disclosure has been described with respect to specific embodiments, various modifications can be made and can be replaced with equivalents without departing from the true meaning and scope of the present disclosure as defined in the appended claims. Something will be understood by those skilled in the art. In addition, various modifications may be made to apply specific circumstances, materials, composition, methods or processes to the purposes, intent and scope of the present disclosure. All such changes are within the scope of the attached claims. In detail, the methods disclosed herein are described with respect to specific actions performed in a particular order, but these actions may be combined, further subdivided, or rearranged in the book. It is also possible to construct an equal method without departing from the teachings of the disclosure. Thus, unless otherwise specified herein, the order and grouping of each operation does not limit this disclosure.

Claims (15)

A flip chip that includes an upper surface, a lower surface facing the upper surface, an edge surface, and a set of electrodes, the edge surface extending between the upper surface and the lower surface, and the set of electrodes disposed on the lower surface. Type light emitting diode (LED) semiconductor die and
A photoluminescence structure including an upper portion arranged on the upper surface of the LED semiconductor die and an edge portion covering the edge surface of the LED semiconductor die.
A light transmitting layer disposed on the photoluminescence structure and a beam forming structure covering the upper surface of the light transmitting layer are included, and the beam forming structure is contained in a polymer resin material and the polymer resin material. Containing dispersed light-scattering particles, the weight percentage of the light-scattering particles in the beam-formed structure did not exceed 30%.
The light transmitting layer is refracted when a light beam traveling in a direction within ± 45 degrees with respect to a vertical direction perpendicular to the upper surface of the light transmitting layer passes through the light transmitting layer, and the field of view of the light emitting element. Enlarge the corner,
The beam forming structure is arranged at a position above and apart from both the LED semiconductor die and the photoluminescence structure, and a part of a light beam emitted from the upper portion of the photoluminescence structure is emitted. A light-emitting element characterized in that the viewing angle of the light-emitting element is further expanded by turning to the edge surface of the beam-molded structure via the light-scattering particles. The light emitting device according to claim 1, wherein the light-scattering particles in the beam-molded structure do not exceed 10% by weight and do not fall below 0.1%. The light scattering particles are characterized by comprising at least one of TiO ₂ , BN, SiO ₂ or Al ₂ O ₃ , and the polymeric resin material comprising at least one of silicone, epoxy or rubber. Item 1. The light emitting element according to Item 1. The light emitting device according to any one of claims 1 to 3, wherein the lower surface of the edge portion of the photoluminescence structure is substantially the same height as the lower surface of the LED semiconductor die. .. The light emitting element according to any one of claims 1 to 3, wherein the photoluminescence structure further includes an extension portion extending outward from the edge portion of the photoluminescence structure. The light emitting device further includes a soft buffer layer covering the upper surface and the edge surface of the LED semiconductor die, and the photoluminescence structure is disposed on the soft buffer layer, claim 1 to 3. The light emitting element according to any one item. A flip chip that includes an upper surface, a lower surface facing the upper surface, an edge surface, and a set of electrodes, the edge surface extending between the upper surface and the lower surface, and the set of electrodes disposed on the lower surface. Type light emitting diode (LED) semiconductor die and
A light transmitting layer disposed on the LED semiconductor die and
The beam-molded structure includes a beam-molded structure covering the upper surface of the light-transmitting layer, the beam-molded structure contains a polymer resin material, and light-scattering particles dispersed in the polymer resin material, and the beam of the light-scattering particles. The weight percentage in the molded structure does not exceed 30%
The light transmitting layer is formed by refracting a light beam traveling in a direction within ± 45 degrees with respect to a vertical direction perpendicular to the upper surface of the light transmitting layer as it passes through the light transmitting layer. Enlarge the viewing angle,
The beam forming structure is arranged at a distant position above the LED semiconductor die, and a part of the light beam emitted from the upper surface of the LED semiconductor die is passed through the light scattering particles of the beam forming structure. A light emitting element characterized by further expanding the viewing angle of the light emitting element by turning to the edge surface. A plurality of LED semiconductor dies are arranged on the release layer to form an array of LED semiconductor dies.
In a method for manufacturing a light emitting device, which comprises forming a package sheet layer including a plurality of package structures on an array of LED semiconductor dies.
The formation of the package sheet layer on the array of LED semiconductor dies comprises forming a plurality of photoluminescence structures on the array of LED semiconductor dies, in which case each of the photoluminescence structures. The upper part is arranged on the corresponding upper surface of the array of the LED semiconductor dies, and each of the photoluminescent structures has an edge part covering the corresponding rim surface of the array of the LED semiconductor dies.
The formation of the package sheet layer on the array of LED semiconductor dies is further further enhanced.
A plurality of light transmitting layers are formed on the plurality of photoluminescent structures, and each of the light transmitting layers is oriented within ± 45 degrees with respect to the vertical direction perpendicular to the upper surface of the light transmitting layer. When the light beam traveling to the light beam passes through the photoluminescent layer, it is refracted to expand the viewing angle of the light emitting element.
Each comprises forming a plurality of beam forming structures covering one corresponding upper surface of the light transmitting layer, each of which is more than 30% in the polymer resin material and the polymer resin material. Each of the beam-formed structures contains an upper separation of both the corresponding LED semiconductor die and the corresponding photoluminescence structure, including light-scattering particles dispersed in the polymer resin material at no weight percentage. A part of the light beam emitted from the upper portion of the photoluminescence structure is directed to the edge surface of the beam forming structure via the light scattering particles, and the light emitting element is said to have the same position. Further expanding the viewing angle, the manufacturing method further
Manufacture of a light emitting device comprising separating the package sheet layer individually and removing the release layer, and removing the release layer before or after the individual separation of the package sheet layer. Method. The method for manufacturing a light emitting element according to claim 8, wherein the light-scattering particles in the beam-molded structure do not exceed 10% by weight and do not fall below 0.1% by weight. The light scattering particles are characterized by comprising at least one of TiO ₂ , BN, SiO ₂ or Al ₂ O ₃ , and the polymeric resin material comprising at least one of silicone, epoxy or rubber. Item 8. The method for manufacturing a light emitting element according to Item 8. The formation of the plurality of beam forming structures further
The light-scattering particles are dispersed in the polymer resin material to form a composition material.
The method for manufacturing a light emitting device according to any one of claims 8 to 10, wherein the upper surface of each of the light transmitting layers is covered with the composition material. A plurality of LED semiconductor dies are arranged on the release layer to form an array of LED semiconductor dies.
In a method for manufacturing a light emitting device, which comprises forming a package sheet layer including a plurality of package structures on an array of LED semiconductor dies.
The formation of the package sheet layer on the array of LED semiconductor dies is
A plurality of light transmitting layers are formed on the array of the LED semiconductor dies, and each of the light transmitting layers advances in a direction within ± 45 degrees with respect to the vertical direction perpendicular to the upper surface of the light transmitting layer. When the light beam passes through the light transmitting layer, it is refracted to expand the viewing angle of the light emitting element.
Each comprises forming a plurality of beam forming structures covering one corresponding upper surface of the light transmitting layer, each of which is more than 30% in the polymer resin material and the polymer resin material. Each of the beam-formed structures is located at a distance above the corresponding LED semiconductor die, comprising light-scattering particles dispersed in the polymer resin material at no weight percentage. A part of the light beam emitted from the upper surface is directed to the edge surface of the beam forming structure via the light scattering particles to further expand the viewing angle of the light emitting element, and the manufacturing method further further expands the viewing angle.
Manufacture of a light emitting device comprising separating the package sheet layer individually and removing the release layer, and removing the release layer before or after the individual separation of the package sheet layer. Method. The method for manufacturing a light emitting element according to claim 12, wherein the light-scattering particles in the beam-molded structure do not exceed 10% by weight and do not fall below 0.1% by weight. The light scattering particles are characterized by comprising at least one of TiO ₂ , BN, SiO ₂ or Al ₂ O ₃ , and the polymeric resin material comprising at least one of silicone, epoxy or rubber. Item 2. The method for manufacturing a light emitting element according to any one of Items 12 and 13. The formation of the plurality of beam forming structures further
The light-scattering particles are dispersed in the polymer resin material to form a composition material.
The method for manufacturing a light emitting device according to any one of claims 12 and 13, wherein the upper surface of each of the light transmitting layers is covered with the composition material.

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