CN202120897U - High power chip packaging structure and lead frame thereof - Google Patents
High power chip packaging structure and lead frame thereof Download PDFInfo
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- CN202120897U CN202120897U CN2011200595095U CN201120059509U CN202120897U CN 202120897 U CN202120897 U CN 202120897U CN 2011200595095 U CN2011200595095 U CN 2011200595095U CN 201120059509 U CN201120059509 U CN 201120059509U CN 202120897 U CN202120897 U CN 202120897U
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- lead frame
- accommodation space
- packaging structure
- chip bearing
- power die
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The utility model discloses a high power chip packaging structure and a lead frame thereof. The lead frame of the high power chip packaging structure comprises a chip bearing base provided with an upper surface and a lower surface. The thickness between the upper surface and the lower surface is at least 0.5mm. A containing space is formed on the upper surface and used for containing an adhering layer, and one inner bottom surface of the containing space is further provided with a plurality of bumps and a plurality of contact points which are arranged around the chip bearing base in surrounding mode.
Description
Technical field
The utility model relates to a kind of high-power die packaging structure and lead frame thereof, particularly can evenly control high-power die packaging structure and the lead frame thereof that sticks together thickness relevant for a kind of.
Background technology
Now; The semiconductor packages industry is in order to satisfy the demand of various high-density packages; Develop the packaging structure that various different types gradually; And these packaging structures normally select for use lead frame (leadframe) or base plate for packaging (substrate) come the support plate (carrier) as carries chips, the packaging structure of wherein common use lead frame for example be little external form packaging structure (small outline package, SOP), quad flat package constructs (quad flat package; QFP) or the square flat outer-pin-free packaging structure (quad flat no-lead package, QFN) etc.Moreover; When the semiconductor chip of desire encapsulation is a kind of high-power die (high power chip); For example be the power amplifier chip, then more need further additional designs chip cooling structure in packaging structure, prevent that so that good heat sinking function to be provided high-power die from burning because of overheated.
For instance; Please with reference to shown in Figure 1; United States Patent (USP) announces the 7th; 145; Propose a kind of non-exterior pin semiconductor packaging construction (Leadless Semiconductor Package) for No. 222, wherein the packaging structure 10 of a square flat outer-pin-free (QFN) type comprises a chip bearing (die pad) 11, several contacts (land) 12, a chip (chip) 13, an adhesion coating (adhesive layer) 14, several wires (wires) 15 and a packaging adhesive material (molding compound) 16, and wherein said chip bearing 11 and several contacts 12 are that the metallic plate by same lead frame etches partially respectively through secondary and processes; Said chip bearing 11 has a groove 111, and the inner bottom surface of said groove 111 has several depressions 112 in addition.Said chip 13 is fixed on through said adhesion coating 14 in the groove 111 of said chip bearing 11, and wherein said adhesion coating 14 sticks at the inner bottom surface of said groove 111 and inserts in the said depression 112, and said groove 111 prevents that said adhesion coating 14 from outwards overflowing.Said lead 15 is electrically connected between the upper surface of several weld pads and said contact 12 on active surface of said chip 13, and wherein the lead 15 of sub-fraction is electrically connected between the access area (indicating) on earthy weld pad and chip bearing 11 surfaces of said chip 13.Said packaging adhesive material 16 coats the upper surface of the said chip of protection 13, adhesion coating 14, lead 15 and said chip bearing 11 and contact 12; The lower surface of said packaging adhesive material 16 only exposes the lower surface of said chip bearing 11 and contact 12; The lower surface of wherein said chip bearing 11 is in order to heat radiation/ground connection, and the lower surface of said contact 12 is as the terminal of I/O.
Yet; Above-mentioned packaging structure 10 still has following technical problem; For example: the chip bearing 11 of said packaging structure 10 is tool one limited thickness only; Make said chip bearing 11 can't in time take away the heat energy of said chip 13, so the thickness specification of its lead frame is not suitable for the encapsulation of high-power die.Moreover, during sticking together,, therefore in fact very easily cause said chip 13 to combine with said adhesion layer 14 with non-level heeling condition because said adhesion layer 14 is still uncured.As a result, receive the inclination compressing of said chip 13, said adhesion layer 14 sticking together thickness T 1 and will produce the uneven problem of thickness distribution between the inner bottom surface of the groove 111 of the lower surface of said chip 13 and said chip bearing 11.When said packaging structure 10 feeds high electric current running, the high heat that said chip 13 produces will produce the inconsistent situation of the downward conduction efficiency of heat energy in said the thickness T 1 thicker and thin zone of sticking together.So, to produce local degradation speed very fast because of the inequality of being heated easily for said adhesion layer 14, and possibly peel off (delamination) phenomenon in the part generation.Peel off in case produce, the high heat that said chip 13 produces heat radiation downwards in time, and have the high risk of burning, thereby reduced relatively the reliability and the useful life of said packaging structure 10.In addition; If do not prevent the structure that tilts in the said groove 111, when the adhesion material design of then said adhesion layer 14 reached certain thickness, not only material usage was bigger; And will be softer; Be very easy to be extruded, and produce the glue that overflows, and then pollute the routing quality of the access area of said chip bearing 11 upper surfaces.
So, be necessary to provide a kind of high-power die packaging structure and lead frame thereof, to solve the existing in prior technology problem.
The utility model content
The main purpose of the utility model is to provide a kind of high-power die packaging structure and lead frame thereof; Wherein the chip bearing of lead frame is provided with accommodation space with ccontaining adhesion layer; And the inner bottom part of accommodation space has several projections; In order to preventing the lower surface over-tilting of high-power die, keeping the levelness of high-power die, and effective even the sticking together thickness and reduce the use amount of adhesion material and the glue problem of overflowing of control adhesion layer simultaneously; Thereby help keeping the thermal energy conduction homogeneity of adhesion layer and then the reliability and the useful life of improving packaging structure relatively.
The secondary objective of the utility model is to provide a kind of high-power die packaging structure and lead frame thereof; Wherein the chip bearing of lead frame has the thickness that is at least 0.5 millimeter (mm); So that enough heat absorption usefulness and radiating efficiencys to be provided, thereby help being applied in the heat radiating type encapsulation field of high-power die.
Another purpose of the utility model is to provide a kind of high-power die packaging structure and lead frame thereof, wherein utilizes the upper surface of cutting tool incision chip bearing to form section and bend this section, defines accommodation space with the side wall portion (dam) that produces projection; Simultaneously, utilize the upper surface of impressing mould impression chip bearing 31, forming several projections (and accommodation space), thereby help increasing the processing selectivity of lead frame.
A purpose again of the utility model is to provide a kind of high-power die packaging structure and lead frame thereof; The side wall portion that is wherein produced by section produces groove one simultaneously in its outside; This groove can be crossed the adhesion material that side wall portion outwards overflows in order to collect accident; Avoiding the influencing operation of ground connection routing, thereby help improving relatively encapsulation yields (yield).
For reaching the aforementioned purpose of the utility model; The utility model provides a kind of lead frame of high-power die packaging structure, and wherein said lead frame comprises: a chip bearing has a upper surface and a lower surface; Said upper surface is at least 0.5 millimeter to the thickness between the lower surface; Said upper surface forms an accommodation space, and in order to a ccontaining adhesion coating, an inner bottom surface of wherein said accommodation space is provided with several projections in addition; And, several contacts, around be arranged in said chip bearing around.
In an embodiment of the utility model, the upper surface of said chip bearing to the thickness between the lower surface between 0.5 to 2.8 millimeter.
In an embodiment of the utility model, said accommodation space is that several side wall portions definition by the upper surface of said chip bearing forms, said side wall portion with respect to the height of the inner bottom surface of said accommodation space between 50 to 60 microns (μ m).
In an embodiment of the utility model, have groove one in the outside of said side wall portion, said groove with respect to the degree of depth of the upper surface of said chip bearing between 50 to 60 microns.
In an embodiment of the utility model, the surface of said projection is an arc-shaped curved surface or a conical surface.
In an embodiment of the utility model, said projection is at least 15 microns with respect to the height of the inner bottom surface of said accommodation space.
In an embodiment of the utility model, said projection with respect to the height of the inner bottom surface of said accommodation space between 15 to 45 microns.
In an embodiment of the utility model, said adhesion coating is with respect to the thickness of the inner bottom surface of the said accommodation space height greater than said projection.
In an embodiment of the utility model, the minimum number of said projection is 4, and a diameter (size) of said projection for example is 0.5 millimeter between 0.1 to 1.0 millimeter.
In an embodiment of the utility model, said projection is the inner bottom surface that is arranged in said accommodation space of symmetry, and a minimum spacing of each two adjacent said projection is preferably between 0.4 to 1.2 millimeter, for example 0.8 millimeter.
In an embodiment of the utility model; Said accommodation space is the accommodation space of the recess that forms of the upper surface by said chip bearing, the inner bottom surface of said accommodation space with respect to a cup depth of the upper surface of said chip bearing between 50 to 60 microns.
Moreover; The utility model provides another kind of high-power die packaging structure, and wherein said high-power die packaging structure comprises: a lead frame comprises a chip bearing and several contacts; Said chip bearing has a upper surface and a lower surface; Between 0.5 to 2.8 millimeter, said upper surface forms an accommodation space to said upper surface to the thickness between the lower surface, and an inner bottom surface of said accommodation space is provided with several projections; Said several contacts around be arranged in said chip bearing around; One adhesion layer is placed in the said accommodation space; And a high-power die, having an active surface and a back side, amplexiform on said adhesion layer at the said back side.
In an embodiment of the utility model; Other comprises between the upper surface of several weld pads and said contact on active surface that several wires is electrically connected at said chip, and is electrically connected between at least one access area of upper surface of at least one earthy weld pad and said chip bearing of said chip.
In an embodiment of the utility model; Other comprises a packaging adhesive material; It coats the upper surface of the said high-power die of protection, adhesion coating, lead and said chip bearing and contact, and the lower surface of said packaging adhesive material only exposes the lower surface of said chip bearing and contact.
In an embodiment of the utility model, said adhesion layer is tin cream or epoxide-resin glue.
In an embodiment of the utility model, said accommodation space is that several side wall portions definition by the upper surface of said chip bearing forms, said side wall portion with respect to the height of the inner bottom surface of said accommodation space between 50 to 60 microns.
In an embodiment of the utility model, said chip bearing have a groove around be arranged in said side wall portion around.
In addition; The utility model provides a kind of manufacturing approach of lead frame of high-power die packaging structure, and wherein said manufacturing approach comprises the following step: a conductive wire frame strip is provided, and it has several lead frame unit; Said lead frame unit respectively comprises a chip bearing and several contacts; Said chip bearing has a upper surface and a lower surface, said upper surface to the thickness between the lower surface between 0.5 to 2.8 millimeter, said several contacts around be arranged in said chip bearing around; The upper surface that utilizes a cutter tool to cut said chip bearing forms several sections and bends said section, defines an accommodation space with the side wall portion that produces several projections; And, utilize an impressing mould to impress the inner bottom surface of said accommodation space, to form several projections.
In an embodiment of the utility model; Form in the step of several sections at the upper surface that utilizes a cutter tool to cut said chip bearing; The outside in said section produces groove simultaneously one; Said groove is crossed the adhesion material that side wall portion outwards overflows in order to collect accident, wherein said groove with respect to the degree of depth of the upper surface of said chip bearing between 50 to 60 microns (μ m).
In an embodiment of the utility model, after forming said projection, other comprises step: in said accommodation space, insert an adhesion coating; Cementation one high-power die on said adhesion coating, amplexiform in said adhesion layer at a back side of wherein said high-power die; And; Utilize several wires to be electrically connected between the upper surface of several weld pads and said contact on active surface of said high-power die, and be electrically connected between at least one access area of upper surface of at least one earthy weld pad and said chip bearing of said high-power die.
In an embodiment of the utility model; After utilizing said lead to electrically connect; Other comprises step: form a packaging adhesive material; To coat the upper surface of the said high-power die of protection, adhesion coating, lead and said chip bearing and contact, the lower surface of said packaging adhesive material only exposes the lower surface of said chip bearing and contact.
Perhaps; The utility model provides the manufacturing approach of the lead frame of another kind of high-power die packaging structure, and wherein said manufacturing approach comprises the following step: a conductive wire frame strip is provided, and it has several lead frame unit; Said lead frame unit respectively comprises a chip bearing and several contacts; Said chip bearing has a upper surface and a lower surface, said upper surface to the thickness between the lower surface between 0.5 to 2.8 millimeter, said several contacts around be arranged in said chip bearing around; And, utilize an impressing mould to impress the upper surface of said chip bearing, the accommodation space and the while that form a recess with definition form several projections at an inner bottom surface of said accommodation space.
In an embodiment of the utility model, the inner bottom surface of said accommodation space between 50 to 60 microns, for example is 60 microns with respect to a cup depth of the upper surface of said chip bearing.
In an embodiment of the utility model, said adhesion coating for example is 50 microns with respect to the thickness of the inner bottom surface of the said accommodation space height greater than said projection.
Description of drawings
Fig. 1 is the sketch map of a kind of existing non-exterior pin semiconductor packaging construction and lead frame thereof.
Fig. 2 is the sketch map of the utility model first embodiment high-power die packaging structure and lead frame thereof.
Fig. 3 A, 3B, 3C, 3D and 3E are the manufacturing process sketch mapes of the lead frame of the utility model first embodiment high-power die packaging structure.
Fig. 4 A, 4B, 4C and 4D are the manufacturing process sketch mapes of the lead frame of the utility model second embodiment high-power die packaging structure.
Embodiment
For making the utility model above-mentioned purpose, characteristic and advantage more obviously understandable, hereinafter is special lifts the utility model preferred embodiment, and conjunction with figs., elaborates as follows.Moreover, the direction term that the utility model is mentioned, for example " on ", D score, " preceding ", " back ", " left side ", " right side ", " interior ", " outward ", " side " etc., only be direction with reference to annexed drawings.Therefore, the direction term of use is in order to explanation and understands the utility model, but not in order to restriction the utility model.
Please with reference to shown in Figure 2; It discloses the high-power die packaging structure 30 of the utility model first embodiment; It mainly comprises a chip bearing 31, several contacts 32, a high-power die 33, an adhesion layer 34, several wires 35 and a packaging adhesive material 36; Wherein said chip bearing 31 and several contacts 32 are referred to as a lead frame (unit), and the utility model will utilize Fig. 3 A to 3E to specify the manufacturing process sketch map of lead frame of the high-power die packaging structure 30 of Fig. 2 in hereinafter.
Please with reference to shown in Fig. 3 A; The manufacturing approach of the lead frame of the utility model first embodiment high-power die packaging structure is at first: a conductive wire frame strip 300 is provided; It has several lead frame unit, and said lead frame unit respectively comprises a chip bearing 31 and several contacts 32, and the shape of said chip bearing 31 can be square, rectangle or other geometries; Said several contacts 32 around be arranged in said chip bearing 31 around; Can be one to four side here, or when said chip bearing 31 is polygon, also can select to be arranged in the one of which side to whole sides.The chip bearing 31 of said conductive wire frame strip 300 and the shape of contact 32 are processed respectively through etching or punching press by a metallic plate and are defined shape; Said metallic plate can be selected from the metal of various tool satisfactory electrical conductivities, for example copper, iron, aluminium, nickel, zinc or its alloy etc.Concerning said conductive wire frame strip or lead frame unit; It is that the thickness T that is designed to said chip bearing 31 (by its upper surface to the lower surface) is at least 0.5 millimeter; And preferably between 0.5 to 2.8 millimeter (mm), for example be 0.5,1.0,1.5,2.0,2.5 or 2.8mm.In the present embodiment, the thickness of said contact 32 also is same as the thickness T of said chip bearing 31, but also can select to be designed to less than or greater than the thickness T of said chip bearing 31.Said chip bearing 31 is designed with the thickness that is at least 0.5 millimeter; Its purpose is when said chip bearing 31 is carried said high-power die 33; In order to said high-power die 33 enough heat absorption usefulness and radiating efficiencys to be provided, thereby this Thickness Design helps being applied in the heat radiating type encapsulation of carrying out said high-power die 33.
Please with reference to shown in Fig. 3 A, 3B and the 3C; The manufacturing approach of the lead frame of the utility model first embodiment high-power die packaging structure is followed: utilize the upper surface of the said chip bearing 31 of a cutter tool 40 incisions to form several sections 311 ' and bend said section 311 ', define an accommodation space 310 with the side wall portion 311 that produces several projections.In this step; Shown in Fig. 3 A; Utilize said cutting tool 40 to carry out cutting processing earlier in the preset periphery that will form the position of said side wall portion 311 of the upper surface of said chip bearing 31; Said cutting tool 40 is flat chisels, and the upper surface that digs into said chip bearing 31 that it at first tilts with a pre-determined tilt angle is to form groove 312 one; Wherein said pre-determined tilt angle is preferably spent for example 30,40,45,50,55 or 60 jiaos between 30 to 60 with respect to the upper surface of said chip bearing 31; And said groove 312 between 50 to 60 microns (μ m), for example is 50,52.5,55,57.5 or 60 μ m with respect to the degree of depth of the upper surface of said chip bearing 31.Then, shown in Fig. 3 B, in the time of in said cutting tool 40 still rests on said groove 312, rotate said cutting tool 40, to bend said section 311 ', up to the upper surface of said section 311 ' perpendicular to said chip bearing 31.At this moment; Said section 311 ' can be in order to the side wall portion 311 that defines a projection; Wherein shown in Fig. 3 C, said side wall portion 311 between 50 to 60 microns (μ m), for example is 50,52.5,55,57.5 or 60 μ m with respect to the height H of the inner bottom surface of said accommodation space 310.Shown in Fig. 3 C, then utilize same way as, form several section 311 ' (for example 4) and bend said section 311 ', promptly can produce the side wall portion 311 of several projections, come common definition one accommodation space 310.
Please with reference to shown in Fig. 3 D and the 3E, the manufacturing approach of the lead frame of the utility model first embodiment high-power die packaging structure is followed: utilize the inner bottom surface of the said accommodation space 310 of an impressing mould 50 impressions, to form several projections 313.In this step, said impressing mould 50 is metal stamping and pressings, and its lower surface is an impression face; Have several concave points 51 on the said impression face, the specification corresponding complementary of said concave point 51 is in the predetermined dimension of said projection 313, wherein shown in Fig. 2 and 3E; Said projection 313 is at least 15 microns with respect to the preset height h of the inner bottom surface of said accommodation space 310; And preferably between 15 to 45 microns, for example between 20 to 35 microns, particularly between 20 to 30 microns; The minimum number of said projection 313 is 2 * 2, and a preset diameters (size) D of said projection 313 is preferably between 0.1 to 1.0 millimeter, for example is 0.1,0.25,0.5,0.75 or 1.0 millimeter; Said projection 313 is the inner bottom surface that is arranged in said accommodation space 310 of symmetry preferably, for example is that the array of matrix is arranged, but is not limited to this; The surface of said projection 313 is a conical surface (or an arc-shaped curved surface); The design of said conical surface (or arc-shaped curved surface) projection shape; The projection design that has horizontal surface with end face is compared, and helps to increase flowability and the distributed continuous property of sticky material above projection, especially owing to the reason of manufacture process control; When causing the sticky material consumption not enough; The height of sticky material and the height of projection near the time, this kind design can be avoided forming between chip and the lug surface with horizontal surface and directly contact and cause the adhere defective of generation delamination (delimination) of chip; Moreover a predetermined minimum spacing P of each two adjacent said projection 313 preferably between 0.4 to 1.2 millimeter, for example is 0.4,0.6,0.8,1.0 or 1.2 millimeter.In the present embodiment; Said impressing mould 50 is main in order to suppress the shape of said projection 313; In fact; Possibly cause the inner bottom surface of said accommodation space 310 to form slightly simultaneously, but this depression does not influence the effect of said accommodation space 310 ccontaining said adhesive agents 34 to lower recess (not illustrating) yet.
Please with reference to shown in Figure 2, after producing said conductive wire frame strip 300 through above-mentioned manufacturing approach, the utility model first embodiment then can carry out follow-up encapsulation step, and it comprises: in said accommodation space 310, insert an adhesion coating 34; Cementation one high-power die 33 on said adhesion coating 34, amplexiform on said adhesion layer 34 at a back side of wherein said high-power die 33; And utilize several wires 35 to be electrically connected between the upper surface of several weld pads and said contact 32 on active surface of said high-power die 33, and be electrically connected between at least one access area (indicating) of upper surface of at least one earthy weld pad and said chip bearing 31 of said high-power die 33.In the step of inserting said adhesion coating 34; Said adhesion coating 34 can be tin cream or epoxide-resin glue; And (bond line thickness is BLT) greater than the height h of said projection 313 with respect to the thickness of the inner bottom surface of said accommodation space 310 for above-mentioned adhesion coating 34.When the said high-power die 33 of cementation; Because the existence of projection is arranged; Will improve because adhesion material design when reaching certain thickness, the adhesion material consumption is too much, and softer and cause be extruded phenomenon; Also can improve the glue problem of overflowing, also guarantee the thickness (being BLT control) of adhesion material simultaneously.
Then; After utilizing said lead 35 to electrically connect; Other comprises a sealing step: form a packaging adhesive material 36; To coat the upper surface of the said high-power die of protection 33, adhesion coating 34, lead 35 and said chip bearing 31 and contact 32, the lower surface of said packaging adhesive material 36 only exposes the lower surface of said chip bearing 31 and contact 32.Only; It should be noted that; Though the high-power die packaging structure 30 of the utility model is that packaging structure with square flat outer-pin-free type (QFN) is an example at this; But be not limited to this, the special lead frame design of the utility model can be applicable to anyly have the chip bearing and in order in the heat radiating type packaging structure that encapsulates said high-power die 33, for example be applied to have in the little external form packaging structure (SOP) and/or quad flat package structure (QFP) of heat sinking function.
Please with reference to shown in Fig. 4 A, 4B, 4C and the 4D; The lead frame of the high-power die packaging structure of the utility model second embodiment and manufacturing approach thereof are similar in appearance to the utility model first embodiment; And roughly continue to use similar elements title and figure number; But the difference characteristic of second embodiment is: the manufacture of wire holder of the high-power die packaging structure of said second embodiment comprises the following step: a conductive wire frame strip 300 is provided; It has several lead frame unit, and said lead frame unit respectively comprises a chip bearing 31 and several contacts 32, said several contacts 32 around be arranged in said chip bearing 31 around; And, utilize an impressing mould 50 to impress the upper surface of said chip bearing 31, the accommodation space 310 and the while that form a recess with definition form several projections 313 at an inner bottom surface of said accommodation space 310.The surface of said projection 313 is a curved surfaces (or a conical camber).During impressing, also possibly cause the corresponding rising height of upper surface of said accommodation space 310 said chip bearing 31 on every side.In a second embodiment, the specification corresponding complementary of said concave point 51 is in the predetermined dimension of said projection 313, and is same as first embodiment.The inner bottom surface of said accommodation space 310 between 50 to 60 microns, for example is 50,55 or 60 microns with respect to a cup depth of the upper surface of said chip bearing 31.Said adhesion coating 34 is preferably the 16-60 micron, as 20,30,50 microns with respect to the thickness (BLT) of the inner bottom surface of the said accommodation space 310 height h greater than said projection 313.
As stated; Compared to chip bearing 11,21 thickness of the existing lead frame of Fig. 1 cross thin and can't in time take away said chip 13,23 heat energy and said adhesion layer 14,24 stick together the inhomogeneous defective such as cause easily that also be heated inequality and part are peeled off of thickness T 1, T2; The utility model high-power die packaging structure 30 of Fig. 2 to 4D is on the chip bearing 31 of said lead frame, to be provided with said accommodation space 310 with ccontaining said adhesion layer 34; The inner bottom part of said accommodation space 310 has several projections 313; In order to prevent the lower surface over-tilting of said high-power die 33; Keeping the levelness of said high-power die 33, and effective even the sticking together thickness and reduce use amount and the excessive glue problem of adhesion material of the said adhesion layer 34 of control simultaneously, with defective such as avoid that local heating's inequality takes place or peel off; Thereby help keeping the thermal energy conduction homogeneity of said adhesion layer 34 and then the reliability and the useful life of improving said packaging structure relatively.
Moreover the chip bearing 31 of the utility model lead frame has the thickness that is at least 0.5 millimeter (mm), so that enough heat absorption usefulness and radiating efficiencys to be provided, thereby helps being applied in the heat radiating type encapsulation field of high-power die 33.The utility model utilizes the upper surface of the said chip bearing 31 of said cutting tool 40 incisions to form said section 311 ' earlier and bends this section 311 ' again, defines said accommodation space 310 with the said side wall portion (dam) 311 that produces projection; Simultaneously, utilize the upper surface of the said chip bearing 31 of said impressing mould 50 impressions, forming said several projections 313 (and accommodation space 310), thereby help increasing the processing selectivity of lead frame.
In addition; The utility model produces said groove 312 by the said side wall portion 311 that said section 311 ' produces in its outside simultaneously; This groove 312 can be crossed the adhesion material that said side wall portion 311 outwards overflows in order to collect accident; Avoiding the influencing operation of ground connection routing, thereby help improving relatively encapsulation yields (yield).
The utility model is described by above-mentioned related embodiment, yet the foregoing description is merely the example of implementing the utility model.Must be pointed out that disclosed embodiment does not limit the scope of the utility model.On the contrary, being contained in the spirit of claims and the modification and impartial setting of scope includes in the scope of the utility model.
Claims (10)
1. the lead frame of a high-power die packaging structure, it is characterized in that: said lead frame comprises:
One chip bearing; Have a upper surface and a lower surface, said upper surface is at least 0.5 millimeter to the thickness between the lower surface, and said upper surface forms an accommodation space; In order to a ccontaining adhesion coating, an inner bottom surface of wherein said accommodation space is provided with several projections in addition; And
Several contacts, around be arranged in said chip bearing around.
2. the lead frame of high-power die packaging structure as claimed in claim 1 is characterized in that: the upper surface of said chip bearing to the thickness between the lower surface between 0.5 to 2.8 millimeter.
3. the lead frame of high-power die packaging structure as claimed in claim 2; It is characterized in that: said accommodation space is that several side wall portions definition by the upper surface of said chip bearing forms, said side wall portion with respect to the height of the inner bottom surface of said accommodation space between 50 to 60 microns.
4. the lead frame of high-power die packaging structure as claimed in claim 1 is characterized in that: the surface of said projection is an arc-shaped curved surface or a conical surface.
5. the lead frame of high-power die packaging structure as claimed in claim 1 is characterized in that: said projection is at least 15 microns with respect to the height of the inner bottom surface of said accommodation space.
6. the lead frame of high-power die packaging structure as claimed in claim 5 is characterized in that: said projection with respect to the height of the inner bottom surface of said accommodation space between 15 to 45 microns.
7. the lead frame of high-power die packaging structure as claimed in claim 1 is characterized in that: said adhesion coating is with respect to the thickness of the inner bottom surface of the said accommodation space height greater than said projection.
8. like the lead frame of claim 1 or 7 described high-power die packaging structures, it is characterized in that: the minimum number of said projection is 4, and a diameter of said projection is between 0.1 to 1.0 millimeter.
9. the lead frame of high-power die packaging structure as claimed in claim 1 is characterized in that: said projection is the inner bottom surface that is arranged in said accommodation space of symmetry, and a minimum spacing of each two adjacent said projection is between 0.4 to 1.2 millimeter.
10. high-power die packaging structure, it is characterized in that: said high-power die packaging structure comprises:
One lead frame; Comprise a chip bearing and several contacts; Said chip bearing has a upper surface and a lower surface; Between 0.5 to 2.8 millimeter, said upper surface forms an accommodation space to said upper surface to the thickness between the lower surface, and an inner bottom surface of said accommodation space is provided with several projections;
Said several contacts around be arranged in said chip bearing around;
One adhesion layer is placed in the said accommodation space; And
One high-power die has an active surface and a back side, and amplexiform on said adhesion layer at the said back side.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200595095U CN202120897U (en) | 2011-03-08 | 2011-03-08 | High power chip packaging structure and lead frame thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011200595095U CN202120897U (en) | 2011-03-08 | 2011-03-08 | High power chip packaging structure and lead frame thereof |
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| CN202120897U true CN202120897U (en) | 2012-01-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148213A (en) * | 2011-03-08 | 2011-08-10 | 日月光半导体（威海）有限公司 | Lead frame of high-power chip package structure and manufacturing method thereof |
| CN110565058A (en) * | 2019-08-29 | 2019-12-13 | 江苏长电科技股份有限公司 | magnetron sputtering method of BGA product |
-
2011
- 2011-03-08 CN CN2011200595095U patent/CN202120897U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148213A (en) * | 2011-03-08 | 2011-08-10 | 日月光半导体（威海）有限公司 | Lead frame of high-power chip package structure and manufacturing method thereof |
| CN102148213B (en) * | 2011-03-08 | 2014-06-04 | 日月光半导体（威海）有限公司 | Lead frame of high-power chip package structure and manufacturing method thereof |
| CN110565058A (en) * | 2019-08-29 | 2019-12-13 | 江苏长电科技股份有限公司 | magnetron sputtering method of BGA product |
| CN110565058B (en) * | 2019-08-29 | 2021-07-27 | 江苏长电科技股份有限公司 | Magnetron sputtering method of BGA product |
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