CN204088301U - Based on the chip packaging device that copper ball flattens in advance - Google Patents
Based on the chip packaging device that copper ball flattens in advance Download PDFInfo
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- CN204088301U CN204088301U CN201420473605.8U CN201420473605U CN204088301U CN 204088301 U CN204088301 U CN 204088301U CN 201420473605 U CN201420473605 U CN 201420473605U CN 204088301 U CN204088301 U CN 204088301U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
- H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48817—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48824—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
- H01L2224/85207—Thermosonic bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Abstract
The utility model discloses a kind of chip packaging device flattened in advance based on copper ball, it comprises framework, framework is provided with chip carrier and interior pin, chip carrier is fixedly installed chip, chip is provided with copper wire bonding point, copper wire bonding point and interior pin are by copper wire bonding, and copper wire bonding point comprises aluminium pad and copper sheet, and aluminium pad and copper sheet are welded to connect.Wherein, described copper sheet is realized by the copper ball flattened in advance, and copper ball after pressing pre-on framework, then contacts with face with aluminium pad face, and realizes welding by ultrasonic energy.Excellent effect of the present utility model is: chip damage is little---the work of the pressing copper ball completed on chip is transferred on framework and completes, avoid the damage flattening copper ball on chip silicon is caused; Aluminium is splashed reduce, and then reduce the risk of adjacent welding zone short circuit; In addition, also reduce the thickness of aluminium pad, and then reduce chip manufacturing cost when ensuring the quality of products; The utility model structure is simple, has good practicality.
Description
Technical field
The utility model belongs to the field of semiconductor package of electronic information technical field, is specifically related to a kind of chip packaging device flattened in advance based on copper ball.
Background technology
Along with improving constantly of chip fabrication techniques, the chip area completing said function is more and more less, corresponding chip manufacturing cost is also more and more lower, but the material cost required for encapsulation and processing procedure do not have greatly improved, therefore, in semicon industry, the ratio shared by packaging cost also more and more highlights.Be in the encapsulating products of material with gold thread, cost ratio shared by gold thread reaches 30%, and current international price of gold continuous rise, within 09 year 08 year, compare the growth that gold thread price has 30%, profit with regard to Packaging Industry 10% calculates, and such amount of increase can eat up all profits of Packaging Industry.In order to reduce packaging cost, copper wire welding technique is widely studied as the straw to clutch at of Packaging Industry.Copper cash price only has gold thread cost 1/3-1/10, and the ratio in packaging cost also only has about 6%, greatly reduces packaging cost, for semiconductor packaging industry brings new hope so copper wire welding is at present all as research direction.
After chip area reduces in addition, chip internal layer and layer, interval between the lines become thinner narrower, and these factors cause the signal between plain conductor to create interference.In order to address this problem, low-k (low-k) material is introduced in chip manufacturing, but advanced low-k materials performance is very crisp, this brings a new difficult problem to the encapsulation in later stage, particularly establishing copper cash as under the prerequisite of developing direction, a difficult problem more highlights.Because the physical parameters such as the hardness of copper cash (HV70), yield strength are higher than gold and aluminium, need during bonding to apply larger ultrasonic energy and bonding pressure, therefore easily damage is caused to silicon, for chip or even the destruction of advanced low-k materials.
Utility model content
Therefore, for above-mentioned problem, the utility model proposes a kind of chip packaging device flattened in advance based on copper ball, from solution copper wire welding, and copper cash is started with two aspects of welding of low-k material, explore a kind of new welding manner and the packaging system realized, solve the injury that copper wire welding causes chip, and reduce the high request that copper wire welding proposes chip, to solve the deficiency of prior art.
In order to solve the problems of the technologies described above, the technical scheme that the utility model adopts is, a kind of chip packaging device flattened in advance based on copper ball, comprise framework, framework is provided with chip carrier and interior pin, and chip carrier is fixedly installed chip, chip is provided with copper wire bonding point, copper wire bonding point and interior pin are by copper wire bonding, and copper wire bonding point comprises aluminium pad and copper sheet, and aluminium pad and copper sheet are welded to connect.Wherein, described copper sheet is realized by the copper ball flattened in advance, and copper ball after pressing pre-on framework, then contacts with face with aluminium pad face, and realizes welding by ultrasonic energy.
Wherein, described copper cash adopts wire diameter to be the copper cash of 2mil, and now, the minimum thickness of described aluminium pad (i.e. pad aluminium lamination) can reach 2.6um, is certainly greater than this 2.6um, in order to reduce costs, is preferably 2.6 um.Pass through said structure, aluminium pad being reduced to 2.6um by original 3um, reduces chip manufacturing cost---can weld thinner aluminium lamination and not affect quality after improvement, welding wire diameter be that pad aluminium lamination can be reduced to 2.6um by 3um by the chip of 2mil copper cash during fabrication, save material, reduce costs.
Further, described frame size is 100*160 mil.
Further, described framework is realized by metal base plate and the heat-conducting layer be arranged on metal base plate.Further, described heat-conducting layer is ceramic layer or silver-plated heat-conducting layer.
Compared with prior art, excellent effect of the present utility model is: chip damage is little---the copper ball pressing stage originally completed on chip, this power that presses down and the ultrasonic energy in later stage cause damage to chip internal, in order to address this is that, the work of the pressing copper ball that chip completes is transferred on framework and is completed by the utility model; Like this, the damage flattening copper ball on chip silicon is caused is avoided; Aluminium splashes and reduces---and pad is generally Al-Si1%-Cu0.5%, and relative copper ball hardness is softer, and by aluminum extruded welding zone, can cause adjacent welding zone short circuit after copper ball is in contact with it, the minimizing of aluminium splashing (extruding) can reduce this kind of risk; In addition, also reduce the thickness of aluminium pad, and then reduce chip manufacturing cost when ensuring the quality of products; The utility model structure is simple, has good practicality.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Now with embodiment, the utility model is further illustrated by reference to the accompanying drawings.
In prior art, the first means of spot welds is all complete on chip, and the topmost work of copper wire welding will flatten bottom copper ball, and then carries out thermosonic bonding again to connect, and so the work flattened bottom copper ball will be completed on chip.Can be good to make copper ball flattening, certainly will very large impulsive force and down force pressure to be used to solve, and the aluminium pad that large pressure can make copper ball be absorbed on chip is more, the aluminum layer thickness leaving next step ultra-sonic welded for will certainly reduce, the minimizing of aluminum layer thickness or do not have, under the effect of ultrasonic energy, the aluminium lamination that copper ball can penetrate chip welding zone causes damage to chip internal.
The utility model mainly reduces and to solve in semiconductor packages copper wire welding to the injury of chip, in order to address these problems, is undertaken on the framework flattening soldered ball process and be transplanted to carries chips.Framework has the effects such as carries chips, heat conduction, product support, so the pressing work carrying out soldered ball on framework can not have an impact to product quality, and to flattening the impulsive force that presses down of soldered ball and pressure has no particular limits, as long as the requirement required for welding, can complete above.
Concrete, with reference to Fig. 1, a kind of chip packaging device flattened in advance based on copper ball of the present utility model, comprise framework 100, framework 100 is provided with chip carrier 110 and interior pin 120, chip carrier 110 is fixedly installed chip 111, chip 111 is provided with copper wire bonding point, copper wire bonding point and interior pin 120 are by copper cash 130 bonding, and copper wire bonding point comprises aluminium pad 112 and copper sheet 113, and aluminium pad 112 and copper sheet 113 are welded to connect.Wherein, described copper sheet 113 is realized by the copper ball flattened in advance, and copper ball after pressing pre-on framework 100, then realizes the contact in face and face with aluminium pad 112, and realizes the welding of aluminium pad 112 and copper sheet 113 by ultrasonic energy.
As a preferred version of the present embodiment, described framework 100 is of a size of 100*160 mil.Described copper cash 130 adopts wire diameter to be the copper cash of 2mil, now, described aluminium pad 112(and pad aluminium lamination) minimum thickness can reach 2.6um, be certainly greater than this 2.6um, in order to reduce costs, the present embodiment adopts thickness to be the aluminium pad of 2.6 um.Pass through said structure, aluminium pad 112 is reduced to 2.6um by original 3um, reduce chip manufacturing cost---can thinner aluminium lamination be welded and not affect quality after improvement, welding wire diameter is that pad aluminium lamination can be reduced to 2.6um by 3um by the chip of 2mil copper cash during fabrication, save material, reduce costs.
In addition, in order to good heat radiation, as a more excellent scheme, described framework 100 is realized by metal base plate and the heat-conducting layer be arranged on metal base plate.Described heat-conducting layer can be realized by ceramic layer or silver-plated heat-conducting layer.
In said structure, specifically flatten in advance on framework in the technology of copper ball, 3%-10% interval can be reduced in by control UPH; Within value of thrust reaches quality requirement scope, spendable 1.2mil copper cash can reach >=6g; Soldered ball size is controlled, and in original technical foundation, scheme of the present utility model is more stable, and efficiency is higher.In sum, the utility model utilizes the welding manner flattening copper ball on framework, realizes said structure, solves the welding of the chips such as thin aluminium pad, low-K material.
Although specifically show in conjunction with preferred embodiment and describe the utility model; but those skilled in the art should be understood that; not departing from the spirit and scope of the present utility model that appended claims limits; can make a variety of changes the utility model in the form and details, be protection range of the present utility model.
Claims (6)
1. the chip packaging device flattened in advance based on copper ball, it is characterized in that: comprise framework, framework is provided with chip carrier and interior pin, chip carrier is fixedly installed chip, chip is provided with copper wire bonding point, copper wire bonding point and interior pin are by copper wire bonding, and copper wire bonding point comprises aluminium pad and copper sheet, and aluminium pad and copper sheet are welded to connect.
2. chip packaging device according to claim 1, is characterized in that: the wire diameter of described copper cash is 2mil.
3. chip packaging device according to claim 2, is characterized in that: described aluminium mat thickness is 2.6um.
4. chip packaging device according to claim 3, is characterized in that: described frame size is 100*160 mil.
5. chip packaging device according to claim 1, is characterized in that: described framework is realized by metal base plate and the heat-conducting layer be arranged on metal base plate.
6. chip packaging device according to claim 5, is characterized in that: described heat-conducting layer is ceramic layer or silver-plated heat-conducting layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420473605.8U CN204088301U (en) | 2014-08-21 | 2014-08-21 | Based on the chip packaging device that copper ball flattens in advance |
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| CN201420473605.8U CN204088301U (en) | 2014-08-21 | 2014-08-21 | Based on the chip packaging device that copper ball flattens in advance |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111613543A (en) * | 2020-05-28 | 2020-09-01 | 西安微电子技术研究所 | Copper wire ball bonding method for preventing chip bonding pad cracks |
| CN112059398A (en) * | 2020-08-07 | 2020-12-11 | 天台天宇光电股份有限公司 | LED lead ultrasonic automatic welding device |
| CN113257714A (en) * | 2021-05-12 | 2021-08-13 | 广州飞虹微电子有限公司 | Copper-aluminum hybrid welding method and device for chip welding |
-
2014
- 2014-08-21 CN CN201420473605.8U patent/CN204088301U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111613543A (en) * | 2020-05-28 | 2020-09-01 | 西安微电子技术研究所 | Copper wire ball bonding method for preventing chip bonding pad cracks |
| CN112059398A (en) * | 2020-08-07 | 2020-12-11 | 天台天宇光电股份有限公司 | LED lead ultrasonic automatic welding device |
| CN113257714A (en) * | 2021-05-12 | 2021-08-13 | 广州飞虹微电子有限公司 | Copper-aluminum hybrid welding method and device for chip welding |
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