CN204088302U - A kind of chip-packaging structure reducing the damage of thin aluminium lamination chip - Google Patents
A kind of chip-packaging structure reducing the damage of thin aluminium lamination chip Download PDFInfo
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- CN204088302U CN204088302U CN201420473675.3U CN201420473675U CN204088302U CN 204088302 U CN204088302 U CN 204088302U CN 201420473675 U CN201420473675 U CN 201420473675U CN 204088302 U CN204088302 U CN 204088302U
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Abstract
The utility model discloses a kind of chip-packaging structure reducing the damage of thin aluminium lamination chip, it comprises framework, the sealing of framework periphery is provided with packaging body, the chip carrier of chip is formed between this packaging body and framework, chip carrier is fixedly installed chip, chip is provided with copper wire bonding point, all passes through copper wire bonding between adjacent copper bonding point and between copper wire bonding point and interior pin; Described copper cash adopts wire diameter to be the copper cash of 2mil.Excellent effect of the present utility model is: chip damage is little---the work of the pressing copper ball completed on chip is transferred on framework and completes, avoid the damage flattening copper ball on chip silicon is caused; Aluminium is splashed reduce, and then reduce the risk of adjacent welding zone short circuit; In addition, also reduce the thickness of aluminium pad, and then reduce chip manufacturing cost when ensuring the quality of products; The utility model structure is simple, has good practicality.
Description
Technical field
The utility model belongs to the field of semiconductor package of electronic information technical field, is specifically related to a kind of chip-packaging structure reducing the damage of thin aluminium lamination chip.
Background technology
Along with improving constantly of chip fabrication techniques, the chip area completing said function is more and more less, corresponding chip manufacturing cost is also more and more lower, but the material cost required for encapsulation and processing procedure do not have greatly improved, therefore, in semicon industry, the ratio shared by packaging cost also more and more highlights.Be in the encapsulating products of material with gold thread, cost ratio shared by gold thread reaches 30%, and current international price of gold continuous rise, within 09 year 08 year, compare the growth that gold thread price has 30%, profit with regard to Packaging Industry 10% calculates, and such amount of increase can eat up all profits of Packaging Industry.In order to reduce packaging cost, copper wire welding technique is widely studied as the straw to clutch at of Packaging Industry.Copper cash price only has gold thread cost 1/3-1/10, and the ratio in packaging cost also only has about 6%, greatly reduces packaging cost, for semiconductor packaging industry brings new hope so copper wire welding is at present all as research direction.
After chip area reduces in addition, chip internal layer and layer, interval between the lines become thinner narrower, and these factors cause the signal between plain conductor to create interference.In order to address this problem, low-k (low-k) material is introduced in chip manufacturing, but advanced low-k materials performance is very crisp, this brings a new difficult problem to the encapsulation in later stage, particularly establishing copper cash as under the prerequisite of developing direction, a difficult problem more highlights.Because the physical parameters such as the hardness of copper cash (HV70), yield strength are higher than gold and aluminium, need during bonding to apply larger ultrasonic energy and bonding pressure, therefore easily damage is caused to silicon, for chip or even the destruction of advanced low-k materials.
Utility model content
Therefore, for above-mentioned problem, the utility model proposes a kind of chip-packaging structure reducing the damage of thin aluminium lamination chip, from solution copper wire welding, and copper cash is started with two aspects of welding of low-k material, explore a kind of new welding manner and the packaging system realized, solve the injury that copper wire welding causes chip, and reduce the high request that copper wire welding proposes chip, to solve the deficiency of prior art.
In order to solve the problems of the technologies described above, the technical scheme that the utility model adopts is, a kind of chip-packaging structure reducing the damage of thin aluminium lamination chip, comprise framework, the sealing of framework periphery is provided with packaging body, forms the chip carrier of chip, chip carrier is fixedly installed chip between this packaging body and framework, chip is provided with copper wire bonding point, all passes through copper wire bonding between adjacent copper bonding point and between copper wire bonding point and interior pin; Wherein, described copper cash adopts wire diameter to be the copper cash of 2mil.
Wherein, described copper wire bonding point comprises aluminium pad, insulating barrier and copper sheet, and insulating barrier is coated on aluminium pad, and copper sheet is welded on insulating barrier.Wherein, described copper sheet is realized by the copper ball that flattens in advance, copper ball through on framework pre-flatten after, then to be welded on the aluminium pad face that has on insulating barrier, and to realize the contact in face and face, and realize welding by ultrasonic energy.
When described copper cash adopts wire diameter to be the copper cash of 2mil, the minimum thickness of described aluminium pad (i.e. pad aluminium lamination) can reach 2.6um, is certainly greater than this 2.6um, in order to reduce costs, is preferably 2.6um.Pass through said structure, aluminium pad being reduced to 2.6um by original 3um, reduces chip manufacturing cost---can weld thinner aluminium lamination and not affect quality after improvement, welding wire diameter be that pad aluminium lamination can be reduced to 2.6um by 3um by the chip of 2mil copper cash during fabrication, save material, reduce costs.
Further, described frame size is 100*160 mil.
Further, described framework comprises substrate and is arranged at the heat-conducting layer realization on substrate.Preferably, described substrate is provided with nickel coating layer and/or copper coating layer, general, and the thickness of nickel coating layer and/or copper coating layer is advisable with 0.5 μm-1.5 μm.Further, described heat-conducting layer is ceramic layer or silver-plated heat-conducting layer.
Compared with prior art, excellent effect of the present utility model is: chip damage is little---the copper ball pressing stage originally completed on chip, this power that presses down and the ultrasonic energy in later stage cause damage to chip internal, in order to address this is that, the work of the pressing copper ball that chip completes is transferred on framework and is completed by the utility model; Like this, the damage flattening copper ball on chip silicon is caused is avoided; Aluminium splashes and reduces---and pad is generally Al-Si1%-Cu0.5%, and relative copper ball hardness is softer, and by aluminum extruded welding zone, can cause adjacent welding zone short circuit after copper ball is in contact with it, the minimizing of aluminium splashing (extruding) can reduce this kind of risk; In addition, also reduce the thickness of aluminium pad, and then reduce chip manufacturing cost when ensuring the quality of products; Simultaneously, copper ball is after pressing pre-on framework, be welded on the aluminium pad face that has on insulating barrier again, during welding, insulating barrier melts at high heat and scatters, make copper sheet and aluminium pad still realize contacting, and this contact is the contact in face and face, insulating barrier is wrapped in around copper sheet and aluminium pad after scattering simultaneously, form insulating barrier, thus avoid the generation easily causing electric conduction phenomena between adjacent two copper wire bonding points.In addition, substrate is provided with heat-conducting layer, is convenient to heat radiation.The utility model structure is simple, has good practicality.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Now with embodiment, the utility model is further illustrated by reference to the accompanying drawings.
In prior art, the first means of spot welds is all complete on chip, and the topmost work of copper wire welding will flatten bottom copper ball, and then carries out thermosonic bonding again to connect, and so the work flattened bottom copper ball will be completed on chip.Can be good to make copper ball flattening, certainly will very large impulsive force and down force pressure to be used to solve, and the aluminium pad that large pressure can make copper ball be absorbed on chip is more, the aluminum layer thickness leaving next step ultra-sonic welded for will certainly reduce, the minimizing of aluminum layer thickness or do not have, under the effect of ultrasonic energy, the aluminium lamination that copper ball can penetrate chip welding zone causes damage to chip internal.
The utility model mainly reduces and to solve in semiconductor packages copper wire welding to the injury of chip, in order to address these problems, is undertaken on the framework flattening soldered ball process and be transplanted to carries chips.Framework has the effects such as carries chips, heat conduction, product support, so the pressing work carrying out soldered ball on framework can not have an impact to product quality, and to flattening the impulsive force that presses down of soldered ball and pressure has no particular limits, as long as the requirement required for welding, can complete above.
Concrete, with reference to Fig. 1, scheme of the present utility model is, reduce a chip-packaging structure for thin aluminium lamination chip damage, comprise framework 100, the sealing of framework 100 periphery is provided with packaging body, the chip carrier 110 of chip is formed between this packaging body and framework 100, chip carrier 110 is fixedly installed chip 111, chip 111 is provided with copper wire bonding point, all by copper cash 130 bonding between adjacent copper bonding point and between copper wire bonding point and interior pin 120; Wherein, described copper cash 130 adopts wire diameter to be the copper cash of 2mil.
Wherein, described copper cash 130 bonding point comprises aluminium pad 112, insulating barrier 113 and copper sheet 114, and insulating barrier 113 is coated on aluminium pad 112, and copper sheet 114 is welded on insulating barrier 113.Wherein, described copper sheet 114 is realized by the copper ball that flattens in advance, copper ball through on framework 100 pre-flatten after, then to be welded on 112, aluminium pad having on insulating barrier 113, and to realize the contact in face and face, and realize welding by ultrasonic energy.Wherein, aluminium pad 112 is when welding, insulating barrier 113 melts at high heat and scatters, copper sheet 114 and aluminium pad 112 is made still to realize contacting, and this contact is the contact in face and face, simultaneously insulating barrier 113 is wrapped in copper sheet 114 and aluminium pad 112 around after scattering, and forms insulating barrier 113, thus avoids the generation easily causing electric conduction phenomena between adjacent two copper cash 130 bonding points.
When described copper cash 130 adopts wire diameter to be the copper cash of 2mil, described aluminium pad 112(and pad aluminium lamination) minimum thickness can reach 2.6um, certainly be greater than this 2.6um, in order to reduce costs, be preferably 2.6 um.Pass through said structure, aluminium pad 112 is reduced to 2.6um by original 3um, reduce the manufacturing cost of whole chip---can thinner aluminium lamination be welded and not affect quality after improvement, welding wire diameter is that pad aluminium lamination can be reduced to 2.6um by 3um by the chip of 2mil copper cash during fabrication, save material, reduce costs.In the present embodiment, described framework 100 is of a size of 100*160 mil.
In addition, described framework 100 comprises substrate and is arranged at the heat-conducting layer realization on substrate.Preferably, described substrate is provided with nickel coating layer and/or copper coating layer, general, and the thickness of nickel coating layer and/or copper coating layer is advisable with 0.5 μm-1.5 μm.For the ease of heat radiation, described heat-conducting layer is ceramic layer or silver-plated heat-conducting layer.
Specifically when making structure of the present utility model, there are following steps: 1. the line tail that soldering appliance chopper tip is stayed is burnt ball by EFO sparking, producing one can for the copper ball of bonding wire; 2. then chopper, from burning ball position sharp downward movement, arrives the distance set above framework; 3. after arriving setpoint distance, chopper starts to take uniform motion mode downward, flattens after touching framework in this stage by the pressure impacting force-summing device setting downwards by bottom copper ball; 4. measure copper ball size by image measurer, base plane area; 5. calculate copper ball whether to mate with pad openings size; 6. adjust parameter whether to mate with thin aluminium lamination chip; 7. welded; 8. measure bonding wire pulling force; 9. measure soldered ball shearing force; 10. crater test; 11. have welded.
In said structure, adopt the pre-technology flattening copper ball on framework, 3%-10% interval can be reduced in by control UPH; Within value of thrust reaches quality requirement scope, spendable 1.2mil copper cash can reach >=6g; Soldered ball size is controlled, and in original technical foundation, scheme of the present utility model is more stable, and efficiency is higher.In sum, the utility model utilizes the welding manner flattening copper ball on framework, realizes said structure, solves the welding of the chips such as thin aluminium pad, low-K material.
Although specifically show in conjunction with preferred embodiment and describe the utility model; but those skilled in the art should be understood that; not departing from the spirit and scope of the present utility model that appended claims limits; can make a variety of changes the utility model in the form and details, be protection range of the present utility model.
Claims (8)
1. one kind is reduced the chip-packaging structure of thin aluminium lamination chip damage, it is characterized in that: comprise framework, the sealing of framework periphery is provided with packaging body, the chip carrier of chip is formed between this packaging body and framework, chip carrier is fixedly installed chip, chip is provided with copper wire bonding point, all passes through copper wire bonding between adjacent copper bonding point and between copper wire bonding point and interior pin; Described copper cash adopts wire diameter to be the copper cash of 2mil.
2. chip-packaging structure according to claim 1, is characterized in that: described copper wire bonding point comprises aluminium pad, insulating barrier and copper sheet, and insulating barrier is coated on aluminium pad, and copper sheet is welded on insulating barrier.
3. chip-packaging structure according to claim 1, is characterized in that: described aluminium mat thickness is 2.6um.
4. chip-packaging structure according to claim 1, is characterized in that: described frame size is 100*160 mil.
5. chip-packaging structure according to claim 1, is characterized in that: described framework comprises substrate and the heat-conducting layer be arranged on substrate realizes.
6. chip-packaging structure according to claim 5, is characterized in that: described substrate is provided with nickel coating layer and/or copper coating layer.
7. chip-packaging structure according to claim 6, is characterized in that: described substrate is provided with nickel coating layer and/or the copper coating layer of 0.5 μm of-1.5 μm of thickness.
8. chip-packaging structure according to claim 7, is characterized in that: described heat-conducting layer is ceramic layer or silver-plated heat-conducting layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420473675.3U CN204088302U (en) | 2014-08-21 | 2014-08-21 | A kind of chip-packaging structure reducing the damage of thin aluminium lamination chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420473675.3U CN204088302U (en) | 2014-08-21 | 2014-08-21 | A kind of chip-packaging structure reducing the damage of thin aluminium lamination chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111613543A (en) * | 2020-05-28 | 2020-09-01 | 西安微电子技术研究所 | Copper wire ball bonding method for preventing chip bonding pad cracks |
| CN112059398A (en) * | 2020-08-07 | 2020-12-11 | 天台天宇光电股份有限公司 | LED lead ultrasonic automatic welding device |
-
2014
- 2014-08-21 CN CN201420473675.3U patent/CN204088302U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111613543A (en) * | 2020-05-28 | 2020-09-01 | 西安微电子技术研究所 | Copper wire ball bonding method for preventing chip bonding pad cracks |
| CN112059398A (en) * | 2020-08-07 | 2020-12-11 | 天台天宇光电股份有限公司 | LED lead ultrasonic automatic welding device |
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