CN111613543A - Copper wire ball bonding method for preventing chip bonding pad cracks - Google Patents
Copper wire ball bonding method for preventing chip bonding pad cracks Download PDFInfo
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- CN111613543A CN111613543A CN202010470010.7A CN202010470010A CN111613543A CN 111613543 A CN111613543 A CN 111613543A CN 202010470010 A CN202010470010 A CN 202010470010A CN 111613543 A CN111613543 A CN 111613543A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85047—Reshaping, e.g. forming the ball or the wedge of the wire connector by mechanical means, e.g. severing, pressing, stamping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The invention provides a copper wire ball bonding method for preventing chip bonding pad cracks, which comprises the following steps of 1, fixing a ceramic wafer on the residual surface outside a chip area of a frame carrier or a clamp to obtain a welding spot forming target plane of a copper welding ball; step 2, moving the copper welding balls to a ceramic surface of a welding point forming target plane of the copper welding balls, then carrying out a welding point forming process on the copper welding balls on the ceramic surface, and enabling the copper welding balls with flattened bottoms to leave the surface of the ceramic surface after the welding point forming is finished; and 3, transferring the copper welding balls with the flattened bottoms to the upper part of the bonding pad to perform an interface bonding process, and completing copper wire ball welding on the bonding pad. According to the invention, the welding spot forming section is transplanted to the ceramic surface from the surface of the welding spot aluminum layer, and then the welding spot forming section and the subsequent bonding section of the copper welding ball are separated from each other spatially, so that the bottom flatness of the copper welding ball can be improved, and the risk of cracking the welding spot in the welding spot bonding process is reduced.
Description
Technical Field
The invention belongs to the field of semiconductor integrated circuit packaging test, and particularly relates to a copper wire ball bonding method for preventing chip bonding pad cracks.
Background
Copper wire ball bonding is a lead bonding process widely applied to semiconductor integrated circuits, and compared with a gold wire, the copper wire has the advantages of low cost, high mechanical strength and the like, and has the defects of high hardness, easiness in oxidation and the like, so that a chip bonding pad is extremely easy to crack and damage in a bonding process, and finally the chip fails.
In order to reduce the crack damage of a chip bonding pad after copper wire ball welding, the existing copper wire ball welding technology is mainly controlled by adopting a segmented bonding mode, and the bonding process is decomposed into a welding spot forming section and an interface bonding section which are continuous in time. The welding spot forming section grinds and flattens the bottom of the welding spot through pressure and forms the appearance of the welding spot, and the interface bonding section applies ultrasonic current to realize chemical connection between the bottom surface of the copper welding spot and the welding pad. The welding spot forming and the interface bonding are carried out on the surface of the aluminum layer of the same welding disc.
Specifically, fig. 1 shows a Ball burning step, in which a section of tail of the tip of the riving knife is turned into a Free Air Ball (FAB solder Ball for short) by electronic ignition, and the FAB Ball burning is completed under the action of an airflow blowing circuit, and then the FAB Ball is moved up to the cleaver edge. FIG. 2 shows the formation of solder joints on an aluminum solder pad, after an FAB solder ball contacts an aluminum layer of the solder pad, the solder joints are formed after the solder ball deforms under the action of parameters such as forming pressure, and because the hardness of the aluminum layer is lower than that of a copper solder ball, the bottom of the copper solder ball is poorer in flattening degree, and certain aluminum extrusion can exist; FIG. 3 shows the bonding of solder joints on an aluminum solder pad, after the solder joints are formed, a large ultrasonic current is applied to the solder balls to generate ultrasonic power for promoting the bonding, so that the bottom surfaces of the solder balls and the aluminum layers of the solder pads are promoted to carry out interface chemical reaction, and black intermetallic compounds in the graph are generated to realize IMC connection and further realize interface combination.
But the disadvantages of the mode are that: firstly, under the action of the forming pressure of welding spots, the problem of pad aluminum extrusion exists, so that the thickness of a pad aluminum layer below a copper welding ball is reduced, the capability of the aluminum layer for buffering the bonding action is weakened, the influence degree of a dielectric layer below the aluminum layer under the bonding action is increased, and the risk of pad cracking is increased; secondly, the hardness of the aluminum layer of the bonding pad is lower than that of the copper welding ball, the flattening effect of the bottom of the copper welding ball in the welding spot forming section is poor, and the risk of cracking the bonding pad is increased under the action of ultrasonic current of a subsequent interface bonding section.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides the copper wire ball bonding method for preventing the chip bonding pad from cracking, wherein the copper welding ball is used for welding point forming on the ceramic surface, so that the risk of cracking the bonding pad in the subsequent welding point bonding process is reduced.
The invention is realized by the following technical scheme:
a copper wire ball bonding method for preventing chip bonding pad cracks comprises the following steps,
and 3, transferring the copper welding balls with the flattened bottoms to the upper part of the bonding pad to perform an interface bonding process, and completing copper wire ball welding on the bonding pad.
Preferably, in step 1, the ceramic plate is bonded to the surface of the frame carrier, and the upper surface of the ceramic plate is higher than the surface of the frame carrier.
Preferably, in step 1, the ceramic plate is embedded in a groove on the upper surface of the fixture.
Further, the upper surface of potsherd and the upper surface parallel and level of anchor clamps.
Preferably, in step 1, the surface of the ceramic sheet is processed to be horizontal and fixed on the surface of the frame carrier or the jig after being cleaned.
Preferably, in the step 2, the copper solder balls are obtained through ball burning, the ball burning current is 60-65 mA, and the ball burning time is 270-300 us.
Preferably, the time for forming the welding spots in the step 2 is 3-5 ms, and the pressure is 70-90 g.
Preferably, the ultrasonic current for interface bonding in the step 3 is 45-50 mA, the bonding pressure is 6-12 g, and the bonding time is 10-15 ms.
Preferably, the processes described in step 1 to step 3 are performed on a K & S press welder.
Compared with the prior art, the invention has the following beneficial technical effects:
the invention relates to a copper wire ball bonding method for preventing chip bonding pad cracks, which is characterized in that a ceramic chip is fixed on the residual surface outside a chip area of a frame carrier or a clamp to obtain a welding point forming target plane of a copper welding ball, so that a welding point forming section can be transplanted to the surface of ceramic from the surface of a bonding pad aluminum layer, then the welding point forming section of the copper welding ball is separated from a subsequent bonding section from space, and welding point forming is carried out on the surface of the ceramic to avoid the problem that the thickness of the bonding pad aluminum layer is reduced due to aluminum extrusion in the welding point forming process. The invention avoids the effect of the welding spot forming process on the aluminum bonding pad, and provides an effective solution for preventing and controlling cracks for the copper wire product of which the bonding pad is easy to crack when the existing copper wire process is adopted for bonding.
Furthermore, the welding spot is formed on the flat ceramic surface, and the hardness of the ceramic is higher than that of the copper welding ball, so that the copper welding ball with a good bottom flattening effect can be obtained, the bottom flatness of the copper welding ball can be improved, and the hidden trouble that the welding spot is cracked due to the fact that the bottom of the welding ball is not flat in the bonding stage is eliminated.
Drawings
FIG. 1 is a schematic diagram of a ball burning link in a conventional copper wire ball welding spot segmented bonding process.
FIG. 2 is a diagram of a welding spot forming section process in the existing copper wire ball welding spot segmented bonding process.
FIG. 3 is a process diagram of an interface bonding section in the existing copper wire ball solder joint segmented bonding process.
Fig. 4 is a schematic view of the frame carrier surface bonded with a ceramic sheet according to the present invention.
Fig. 5 is a schematic view of the fixture pressing plate embedded with a ceramic wafer.
FIG. 6 is a schematic diagram of a ball-burning preparation process of the ceramic planar forming solder joint according to the present invention.
FIG. 7 is a process diagram of the planar forming of the solder joint of the ceramic of the present invention.
FIG. 8 is a schematic diagram of the transfer of the solder joint formation on the aluminum pad from the ceramic surface to the top of the aluminum pad in accordance with the present invention.
Fig. 9 is a process diagram of the interface bonding on the aluminum pad according to the present invention.
Fig. 10 is a plan view of the layout of the associated arcs according to the present invention.
In the figure: 1-FAB solder balls, 2-chips, 3-frame carriers, 4-ceramic plates and 5-clamps.
Detailed Description
The present invention will now be described in further detail with reference to specific examples, which are intended to be illustrative, but not limiting, of the invention.
The technical idea of the invention is embodied in the following aspects:
1, realizing welding spot forming by using ceramic surface
The welding spot forming interface is transferred from the surface of the welding pad aluminum layer to the surface of the ceramic, and the specific realization method is as follows:
a, bonding a ceramic wafer on the surface of a frame carrier or embedding the ceramic wafer in a groove on the upper surface of a clamp, as shown in the attached figures 4 and 5, and taking the ceramic wafer as a target plane for forming a copper solder ball welding point;
fig. 4 uses the remaining surface space outside the chip area of the frame carrier, i.e. the bonding of the ceramic plates in the positions offset from the chip, in which method a ceramic plate is bonded to each frame carrier.
And b, editing a line arc program on the ceramic surface to realize the forming of the welding point on the ceramic surface, wherein the forming process of the welding point is shown in the figures 6 and 7.
FIG. 6 is a ball burning step, in which a section of tail of the tip of the chopper is electrically ignited to generate a Free air ball (FAB solder ball for short), and the FAB solder ball moves to the mouth of the chopper under the action of an air flow blowing circuit; FIG. 7 shows the formation of a solder joint on a ceramic surface, after an FAB solder ball moves to the ceramic surface, the FAB solder ball is subjected to the action of forming pressure, the solder ball deforms and forms the solder joint, after the solder joint is formed, the bottom of the solder ball is not connected with the ceramic surface, and when a chopper moves upwards, the solder ball with the flattened bottom leaves the ceramic surface along with the chopper.
2, method for realizing bonding of welding spots on surface of aluminum welding pad
In the existing copper wire ball bonding process, the welding spot bonding comprises a welding spot forming process and an interface bonding process on the same welding disc. In the invention, the welding spot is formed and transplanted on the ceramic surface, only the subsequent interface bonding process is needed to be carried out on the welding pad, as shown in fig. 8 and 9, in order to ensure that the process is carried out smoothly, the wire arc for connecting the welding pad is compiled according to the wiring diagram, the welding spot forming section is closed, only the welding spot bonding section is arranged, and the interface chemical connection between the copper welding ball and the aluminum welding pad is realized through the bonding section.
FIG. 8 shows the solder ball after the solder joint formation on the ceramic surface is completed, transferred to the top of the aluminum pad; fig. 9 shows the interface bonding of the solder points on the aluminum solder pad, and a large ultrasonic current is applied to the solder ball to promote the interface chemical reaction between the bottom surface of the solder ball and the aluminum layer of the solder pad, so as to generate a black intermetallic compound to realize IMC connection and further realize interface bonding.
Linking of solder joint formation on ceramic surface and interfacial bonding on pad
In order to sequentially perform welding spot forming on the ceramic surface and bonding of interfaces on pads, a Bump1Bond type wire arc program compiled on the ceramic surface and wire arcs connected with the pads are set to be front-back adjacent wire sequences, namely, a Bump1Bond wire arc program compiled on the ceramic surface is required to be arranged in front of each wire arc connected with the pads, and two wire arcs meeting the sequencing requirement jointly form a wire arc association combination for realizing segmented bonding.
The following is a detailed description of a typical embodiment.
Example 1
Aiming at a certain model of LQFP32L product (wherein the size of a frame carrier for chip bonding is 150mils multiplied by 150mils), a clamp which is matched with the frame carrier and has the specification of LQFP32L (150X150) is selected, and the specific implementation steps on an Ultra type K & S press welder are as follows:
step 1: selecting a jig of LQFP32L matched with a product, wherein the jig comprises a pressing plate and a hot seat, embedding a high-temperature resistant ceramic plate at the same direction on the right side of each window of the pressing plate, the plane size of the ceramic plate selected in the implementation is 0.75cm multiplied by 0.75cm, and the surface of the ceramic plate after being processed is smooth and clean.
Step 2: and compiling a main bonding program (recorded as a program A) according to a product wiring diagram, closing a welding spot forming section in welding spot segmentation parameter setting, selecting a pressure mode for an interface bonding section, and setting three parameters of ultrasonic current, bonding pressure and bonding time, wherein the parameters obtained after optimization of the method are ultrasonic current of 45-50 mA, bonding pressure of 6-12 g and bonding time of 10-15 ms in sequence, so that a firm interface bonding effect can be obtained.
These three parameters are set to 50mA, 10g and 15ms in this example in this order.
And step 3: the ceramic chip compiles a secondary bonding program (marked as program B) for forming the welding spots, the arc type in the program is Bump1Bond, the ball burning current is set to be 60-65 mA, and the ball burning time is set to be 270-300 us; and closing the function of tail cutting of the Bump1Bond wire arc on the surface of the solder ball and closing the welding integrity detection function. In the welding spot segmentation parameters, a welding spot forming section is started, a pressure mode is selected for the welding spot forming section, and the time for setting the welding spot forming section is 3-5 ms after optimization; the pressure is 70-90 g, so that a very flat and durable flattening effect can be obtained, and the interface bonding section is closed.
In this example, the ball firing current was 60mA, the ball firing time was 300us, and the time and pressure of the ball forming section were set to 5ms and 80g in this order.
And 4, step 4: and if the related arc arrangement line sequence in the program A is marked to be n +1, and the related arc arrangement line sequence in the program B and the related arc in the program A is marked to be n, the method is shown in the attached drawing 10. In FIG. 10, the line marked a is n; the marked b has a line sequence of n + 1.
Aiming at the product in the embodiment, after the bonding mode is applied to bonding, the problem of crack of the pad dielectric layer is not found through corrosion ball detection; after the existing similar welding spots are adopted for segmented bonding, a certain number of cracks of the pad dielectric layer are found in corrosion ball detection.
The ceramic chip is embedded on the clamp or the ceramic chip is adhered in the groove on the upper surface of the frame carrier to be used as a carrier for flattening the bottom of the copper welding ball and completing the welding spot forming, which is a key factor for realizing the invention, so that the welding spot forming process required by the prior similar technology is not required to be carried out on the aluminum welding pad.
The invention observes the bottom surface of the solder ball after the solder joint is formed on the surface of the ceramic by an optical microscope, and observes that the bottom surface of the solder ball is flat without obvious concave-convex phenomenon.
Claims (9)
1. A copper wire ball bonding method for preventing chip bonding pad cracks is characterized by comprising the following steps,
step 1, fixing a ceramic wafer on the residual surface outside a chip area of a frame carrier or a clamp to obtain a welding spot forming target plane of a copper welding ball;
step 2, moving the copper welding balls to a ceramic surface of a welding point forming target plane of the copper welding balls, then carrying out a welding point forming process on the copper welding balls on the ceramic surface, and enabling the copper welding balls with flattened bottoms to leave the surface of the ceramic surface after the welding point forming is finished;
and 3, transferring the copper welding balls with the flattened bottoms to the upper part of the bonding pad to perform an interface bonding process, and completing copper wire ball welding on the bonding pad.
2. The method for ball bonding copper wires for preventing chip bonding pad cracks as recited in claim 1, wherein in step 1, the ceramic sheet is bonded to the surface of the frame carrier, and the upper surface of the ceramic sheet is higher than the surface of the frame carrier.
3. The method for ball bonding copper wires for preventing chip bonding pad cracks as recited in claim 1, wherein in step 1, the ceramic sheet is embedded in a groove on the upper surface of the fixture.
4. The method for ball bonding copper wires for preventing chip pad cracks according to claim 3, wherein the upper surface of the ceramic plate is flush with the upper surface of the fixture.
5. The method for ball bonding copper wires to prevent chip bonding pad cracks according to claim 1, wherein in step 1, the surface of the ceramic wafer is processed to be horizontal and fixed on the surface of the frame carrier or the fixture after being cleaned.
6. The copper wire ball bonding method for preventing the chip bonding pad from cracking as recited in claim 1, wherein in the step 2, the copper solder ball is obtained by ball burning, the ball burning current is 60-65 mA, and the ball burning time is 270-300 us.
7. The method for ball bonding copper wires for preventing the chip bonding pad from cracking according to claim 1, wherein the time for forming the welding spots in the step 2 is 3-5 ms, and the pressure is 70-90 g.
8. The copper wire ball bonding method for preventing the chip bonding pad cracks as recited in claim 1, wherein the ultrasonic current for the interface bonding in the step 3 is 45-50 mA, the bonding pressure is 6-12 g, and the bonding time is 10-15 ms.
9. The method for ball bonding copper wires for preventing chip bonding pad cracks according to claim 1, wherein the processes of the step 1 to the step 3 are performed on a K & S bonding machine.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010470010.7A CN111613543A (en) | 2020-05-28 | 2020-05-28 | Copper wire ball bonding method for preventing chip bonding pad cracks |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010470010.7A CN111613543A (en) | 2020-05-28 | 2020-05-28 | Copper wire ball bonding method for preventing chip bonding pad cracks |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114643394A (en) * | 2022-05-19 | 2022-06-21 | 深圳市大族封测科技股份有限公司 | Ball welding current control method, controller and EFO system |
| CN115488074A (en) * | 2022-09-29 | 2022-12-20 | 西安微电子技术研究所 | Pretreatment method for mounting ball and column in tube shell packaging |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204088301U (en) * | 2014-08-21 | 2015-01-07 | 深圳电通纬创微电子股份有限公司 | Based on the chip packaging device that copper ball flattens in advance |
| CN204088302U (en) * | 2014-08-21 | 2015-01-07 | 深圳电通纬创微电子股份有限公司 | A kind of chip-packaging structure reducing the damage of thin aluminium lamination chip |
-
2020
- 2020-05-28 CN CN202010470010.7A patent/CN111613543A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204088301U (en) * | 2014-08-21 | 2015-01-07 | 深圳电通纬创微电子股份有限公司 | Based on the chip packaging device that copper ball flattens in advance |
| CN204088302U (en) * | 2014-08-21 | 2015-01-07 | 深圳电通纬创微电子股份有限公司 | A kind of chip-packaging structure reducing the damage of thin aluminium lamination chip |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114643394A (en) * | 2022-05-19 | 2022-06-21 | 深圳市大族封测科技股份有限公司 | Ball welding current control method, controller and EFO system |
| CN115488074A (en) * | 2022-09-29 | 2022-12-20 | 西安微电子技术研究所 | Pretreatment method for mounting ball and column in tube shell packaging |
| CN115488074B (en) * | 2022-09-29 | 2023-11-03 | 西安微电子技术研究所 | Pretreatment method for bulb-to-bulb column implantation of tube shell package |
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Application publication date: 20200901 |