CN210897253U

CN210897253U - Semiconductor packaging structure

Info

Publication number: CN210897253U
Application number: CN201922052954.8U
Authority: CN
Inventors: 刘真
Original assignee: Shanghai Guiqin Electronic Co Ltd
Current assignee: Shanghai Guiqin Electronic Co Ltd
Priority date: 2019-11-25
Filing date: 2019-11-25
Publication date: 2020-06-30
Anticipated expiration: 2029-11-25

Abstract

The utility model relates to the technical field of semiconductor processing, in particular to a semiconductor packaging structure, which comprises a substrate, wherein a chip is arranged at the top of the substrate, pins are welded at the edge of the substrate, bonding metal wires are welded on the surfaces of the pins, one ends of the bonding metal wires, which are far away from the pins, are welded with the chip, and a heat dissipation structure is arranged between the substrate and the chip and is used for heat dissipation; the utility model discloses a base plate, chip, pin, bonding wire, heat radiation structure, enclose fender structure, limit structure, heat conduction structure and packaging structure's setting, it still has certain weak point to have solved present semiconductor packaging structure, it is when large-scale long-time function, can produce a large amount of heats, lead to its inside high temperature, cause the problem of circuit damage, this semiconductor packaging structure possesses the heat conductivility that can strengthen the semiconductor, effectively improve its radiating effect's advantage, be worth promoting.

Description

Semiconductor packaging structure

Technical Field

The utility model relates to a semiconductor processing technology field specifically is a semiconductor packaging structure.

Background

The semiconductor packaging refers to a process of processing a wafer passing a test according to a product model and a function requirement to obtain an independent chip, and the packaging process is as follows: the wafer from the previous wafer process is cut into small chips through a scribing process, then the cut chips are pasted on the corresponding small islands of the substrate frame through glue, and then the bonding pads of the chips are connected to the corresponding pins of the substrate through superfine metal wires or conductive resin to form the required circuit.

The conventional semiconductor packaging structure still has certain defects, and when the conventional semiconductor packaging structure is operated for a long time in a large scale, a large amount of heat can be generated, so that the internal temperature is overhigh, and a circuit is damaged.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a semiconductor packaging structure possesses the heat conductivility that can strengthen the semiconductor, effectively improves its radiating effect's advantage, has solved present semiconductor packaging structure and still has certain weak point, and it can produce a large amount of heats when large-scale long-time function, leads to its inside high temperature, causes the problem of circuit damage.

In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a semiconductor packaging structure, includes the base plate, the top of base plate is provided with the chip, the edge welding of base plate has the pin, the skin weld of pin has the key metal wire, the welding between the one end that the pin was kept away from to the key metal wire and the chip, be provided with heat radiation structure between base plate and the chip, heat radiation structure is used for carrying out the work of dispelling the heat, the surface of chip outer lane is provided with encloses the fender structure, it is provided with limit structure to enclose one side that the chip was kept away from to keep off the structure, the below on limit structure surface is provided with heat conduction structure, it all is used for carrying out the heat conduction work to enclose fender structure and heat conduction structure, the top of chip is provided with packaging structure, limit structure is used for spacing and heat conduction to packaging structure.

Preferably, the heat radiation structure comprises a mounting groove, a heat conduction film and heat radiation through holes, the mounting groove is formed in the top of the substrate, the heat conduction film is located at the bottom of the inner side of the mounting groove and is in contact with the bottom of the chip, the heat radiation through holes are formed in the lower portion of the mounting groove, the number of the heat radiation through holes is a plurality, and the heat radiation through holes are communicated with the mounting groove.

Preferably, enclose fender structure including enclosing frame, heat conduction groove and heat conduction silica gel, the heat conduction groove runs through and sets up in the both sides of enclosing the frame, and its longitudinal section is trapezoidal, heat conduction silica gel fills in the inboard of heat conduction groove.

Preferably, the limiting structure comprises a vertical plate, a plurality of heat conducting strips and wire passing holes, the heat conducting strips are welded above the side face of the vertical plate, the wire passing holes are formed in the middle of the surface of the vertical plate, the number of the wire passing holes is the same as the number of bonding metal wires on the two sides, and the bonding metal wires penetrate through the wire passing holes.

Preferably, the heat conduction structure includes a heat conduction column and a heat conduction fin, the heat conduction column penetrates through the vertical plate and extends to the inner side of the heat conduction groove to be in contact with the heat conduction silica gel, and the heat conduction fin is welded on the left side of the outer surface of the heat conduction column.

Preferably, the packaging structure comprises packaging resin, a code spraying area and a fit groove, the code spraying area is arranged at the center of the top of the packaging resin, the fit groove is formed in two sides of the top of the packaging resin, and the heat conducting strip is located inside the fit groove.

Compared with the prior art, the beneficial effects of the utility model are as follows:

the utility model discloses a base plate, chip, pin, bonding wire, heat radiation structure, enclose fender structure, limit structure, heat conduction structure and packaging structure's setting, it still has certain weak point to have solved present semiconductor packaging structure, it is when large-scale long-time function, can produce a large amount of heats, lead to its inside high temperature, cause the problem of circuit damage, this semiconductor packaging structure possesses the heat conductivility that can strengthen the semiconductor, effectively improve its radiating effect's advantage, be worth promoting.

Drawings

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is an enlarged view of a portion A of FIG. 1;

FIG. 3 is a front sectional view of the substrate of the present invention;

fig. 4 is a top view of the package structure of the present invention;

fig. 5 is a schematic structural perspective view of the limiting structure of the present invention;

fig. 6 is a schematic structural perspective view of the heat conducting structure of the present invention.

In the figure: the heat-conducting chip comprises a substrate 1, a chip 2, a pin 3, a 4-bond metal wire, a heat-radiating structure 5, a mounting groove 51, a heat-conducting film 52, a heat-radiating through hole 53, a surrounding structure 6, a surrounding frame 61, a heat-conducting groove 62, heat-conducting silica gel 63, a limiting structure 7, a vertical plate 71, a heat-conducting strip 72, a wire-passing hole 73, a heat-conducting structure 8, a heat-conducting column 81, a heat-conducting fin 82, an encapsulation structure 9, encapsulation resin 91, a code spraying area 92 and a fit groove 93.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-6, a semiconductor package structure includes a substrate 1, a chip 2 is disposed on a top of the substrate 1, a pin 3 is welded at an edge of the substrate 1, a bonding wire 4 is welded on a surface of the pin 3, one end of the bonding wire 4 away from the pin 3 is welded with the chip 2, a heat dissipation structure 5 is disposed between the substrate 1 and the chip 2, the heat dissipation structure 5 is used for heat dissipation, a surrounding structure 6 is disposed on a surface of an outer ring of the chip 2, a limiting structure 7 is disposed on a side of the surrounding structure 6 away from the chip 2, a heat conduction structure 8 is disposed below a surface of the limiting structure 7, both the surrounding structure 6 and the heat conduction structure 8 are used for heat conduction, a package structure 9 is disposed above the chip 2, the limiting structure 7 is used for limiting and conducting heat to the package structure 9, the package structure 9 is used for package work, and the package structure, Chip 2, pin 3, bonding wire 4, heat radiation structure 5, enclose fender structure 6, limit structure 7, heat conduction structure 8 and packaging structure 9's setting, it still has certain weak point to have solved present semiconductor package structure, it is when large-scale long-time operation, can produce a large amount of heats, lead to its inside high temperature, cause the problem of circuit damage, this semiconductor package structure possesses the heat conductivility that can strengthen the semiconductor, effectively improve its radiating effect's advantage, be worth promoting.

In this embodiment, heat radiation structure 5 includes mounting groove 51, heat conduction membrane 52 and heat dissipation through-hole 53, mounting groove 51 is seted up at the top of base plate 1, heat conduction membrane 52 is located the inboard bottom of mounting groove 51, and it contacts with the bottom of chip 2, heat dissipation through-hole 53 is seted up in the below of mounting groove 51, and its quantity is a plurality of, communicate between heat dissipation through-hole 53 and the mounting groove 51, heat conduction membrane 52 is insulating graphite heat conduction membrane, can guarantee that the heat of chip 2 passes through heat conduction membrane 52 and heat dissipation through-hole 53 and passes to the below of base plate 1.

In this embodiment, enclose fender structure 6 including enclosing frame 61, heat-conducting groove 62 and heat conduction silica gel 63, heat-conducting groove 62 runs through and sets up in the both sides of enclosing frame 61, and its longitudinal section is trapezoidal, and heat conduction silica gel 63 fills in heat-conducting groove 62's inboard, and they are used for wrapping up chip 2 around, play the effect of heat conduction simultaneously.

In this embodiment, limit structure 7 includes riser 71, heat conduction strip 72 and line hole 73, the quantity of heat conduction strip 72 is a plurality of, and its welding is in the top of riser 71 side, line hole 73 sets up the middle part on riser 71 surface, the quantity of crossing line hole 73 is the same with the quantity of both sides bonding wire 4, and bonding wire 4 runs through line hole 73, they are used for spacing to the encapsulation operation, and can conveniently install heat conduction structure 8 through limit structure 7, it can play the effect of giving off packaging structure 9 surface heat again simultaneously.

In this embodiment, the heat conducting structure 8 includes a heat conducting column 81 and heat conducting fins 82, the heat conducting column 81 runs through the vertical plate 71 and extends to the inner side of the heat conducting groove 62 to contact with the heat conducting silica gel 63, the heat conducting fins 82 are welded on the left side of the outer surface of the heat conducting column 81, and are used for conducting the heat absorbed by the heat conducting silica gel 63 to the outside, and the heat conducting fins 82 can increase the contact area between the heat conducting column 81 and the air, so as to improve the heat dissipation effect.

In this embodiment, the package structure 9 includes a package resin 91, a code spraying area 92 and a fitting groove 93, the code spraying area 92 is disposed at the center of the top of the package resin 91, the fitting grooves 93 are disposed at two sides of the top of the package resin 91, the heat conducting strip 72 is disposed inside the fitting groove 93, and they are used for performing a final package operation, and the code spraying area 92 is disposed for spraying a code on the surface of the package resin 91.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A semiconductor package structure comprising a substrate (1), characterized in that: the heat dissipation structure is characterized in that a chip (2) is arranged at the top of the substrate (1), a pin (3) is welded at the edge of the substrate (1), a bonding metal wire (4) is welded on the surface of the pin (3), one end, far away from the pin (3), of the bonding metal wire (4) is welded with the chip (2), a heat dissipation structure (5) is arranged between the substrate (1) and the chip (2), the heat dissipation structure (5) is used for heat dissipation work, a surrounding structure (6) is arranged on the surface of the outer ring of the chip (2), a limiting structure (7) is arranged on one side, far away from the chip (2), of the surrounding structure (6), a heat conduction structure (8) is arranged below the surface of the limiting structure (7), both the surrounding structure (6) and the heat conduction structure (8) are used for heat conduction work, and an encapsulation structure (9) is arranged above the chip (2), the limiting structure (7) is used for limiting and conducting heat to the packaging structure (9), and the packaging structure (9) is used for conducting packaging work.

2. The semiconductor package structure of claim 1, wherein: the heat dissipation structure (5) comprises a mounting groove (51), a heat conduction film (52) and heat dissipation through holes (53), wherein the mounting groove (51) is formed in the top of the substrate (1), the heat conduction film (52) is located at the inner bottom of the mounting groove (51) and is in contact with the bottom of the chip (2), the heat dissipation through holes (53) are formed in the lower portion of the mounting groove (51), the number of the heat dissipation through holes is a plurality, and the heat dissipation through holes (53) are communicated with the mounting groove (51).

3. The semiconductor package structure of claim 1, wherein: enclose fender structure (6) including enclosing frame (61), heat-conducting groove (62) and heat conduction silica gel (63), heat-conducting groove (62) run through and set up in the both sides of enclosing frame (61), and its longitudinal section is trapezoidal, heat conduction silica gel (63) are filled in the inboard of heat-conducting groove (62).

4. The semiconductor package structure of claim 1, wherein: spacing structure (7) include riser (71), heat conduction strip (72) and cross line hole (73), the quantity of heat conduction strip (72) is a plurality of, and its welding is in the top of riser (71) side, cross the middle part of line hole (73) seting up on riser (71) surface, the quantity of crossing line hole (73) is the same with the quantity of both sides bonding wire (4), and bonding wire (4) run through and cross line hole (73).

5. A semiconductor package structure according to claim 3 or 4, wherein: heat conduction structure (8) are including heat conduction post (81) and heat conduction fin (82), heat conduction post (81) run through riser (71) and extend to the inboard of heat conduction groove (62) and contact with heat conduction silica gel (63), heat conduction fin (82) welding is on the left side of heat conduction post (81) surface.

6. The semiconductor package structure of claim 4, wherein: the packaging structure (9) comprises packaging resin (91), a code spraying area (92) and a fitting groove (93), wherein the code spraying area (92) is arranged at the center of the top of the packaging resin (91), the fitting groove (93) is formed in two sides of the top of the packaging resin (91), and the heat conducting strip (72) is located inside the fitting groove (93).