CN205122576U - A lead frame and packaging structure for having pin packaging structure - Google Patents
A lead frame and packaging structure for having pin packaging structure Download PDFInfo
- Publication number
- CN205122576U CN205122576U CN201520871294.5U CN201520871294U CN205122576U CN 205122576 U CN205122576 U CN 205122576U CN 201520871294 U CN201520871294 U CN 201520871294U CN 205122576 U CN205122576 U CN 205122576U
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- China
- Prior art keywords
- frame body
- welding disk
- lead frame
- conductive welding
- chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
The utility model provides a lead frame and packaging structure for having pin packaging structure, the lead frame includes frame body and a plurality of running through the electrically conductive stake of frame body, one of frame body be provided with on the surface with the conductive welding disk that electrically conductive stake electricity is connected, the position that does not set up the conductive welding disk on the surface of frame body is used for placing the chip, the conductive welding disk can through the metal wire with chip electric connection, the frame body adopts insulating material to make. The utility model has the advantages of: adopt insulator pin frame body to support the chip, no ji dao exposes behind the plastic envelope, can realize the no exerted QFNDFN in basic island encapsulation demand, can make the structural design of frame more reasonable, effectively improve the routing overall arrangement, shorten the line length, reduce the routing risk, the space in the plastic -sealed body can be more effectively utilized, the encapsulation of small -size packaging body is realized, say there is not the metal in the cutting, it is higher to enable to arrange density, can effective reduce cost.
Description
Technical field
The utility model relates to field of semiconductor package, particularly relates to a kind of lead frame for non-leaded package and encapsulating structure.
Background technology
In prior art, QFN (QuadFlatNolead) is a kind of quad flat non-pin semiconductor chip package, and as shown in Figure 1, cross section structure as shown in Figure 2 for its inside top structure.As can be seen from these two views, encapsulating structure is made up of the base island 10 of central authorities and the conductive welding disk 11 arranged around base island 10 in the bottom in chip package space, chip placement 12 on base island 10, each conductive part on chip 12 is electrically connected with each conductive welding disk 11 respectively by metal wire 13, all the other encapsulated space filling epoxy resins 14.DFN (DualFlatNolead) is a kind of flat rectangular leadless semiconductor chip-packaging structure, and wherein rectangle refers to this chip under the state of overlooking is rectangle, and its encapsulating structure is identical with QFN.On the one hand, in the encapsulating structure of QFN and DFN, all need Ji Dao to carry out chip placement, Ji Dao is a part for lead frame, is made up of metal material, and its effect one is that two is have heat sinking function in a package as the arrangement pedestal of chip.But because pcb board cabling requirement has circuit below plastic-sealed body, the fin not allowing product to have to expose, to avoid the impact of dispelling the heat on pcb board circuit.
Existing solution is: the framework one, exposed without Ji Dao by design also takes equipment boss support weld tabs bonding wire.But need the boss special according to the different designs of often kind of Frame Design to support pad, expense expenditure is comparatively large, boss makes and does not mate the yield that will affect weld tabs bonding wire between frame manufacture tolerance; Need pad pasting to cover the pin portions exposed before encapsulation, the instability of pad pasting operation can affect the ratio of the excessive glue of encapsulation, causes yield loss.Two, the framework exposed without Ji Dao by design also takes pre-packaged technique first to carry out weld tabs supporting construction.But the thickness of current pre-packaged framework cannot be less than 0.127mm owing to encapsulating capabilities limits; The increase of pre-packaged technique can cause the yield loss of framework finished product (glue that overflows, frame deformation, coating are bad) further; Need to invest different pre-packaged moulds based on different frames thickness and outling of truss size.
Therefore, what realization exposed without Ji Dao is encapsulated into urgent problem.
Utility model content
Technical problem to be solved in the utility model is, provides a kind of lead frame for non-leaded package and encapsulating structure, and it can realize the QFN/DFN package requirements exposed without Ji Dao.
In order to solve the problem, the utility model provides a kind of lead frame for non-leaded package, comprise frame body and multiple conduction stake running through described frame body, the conductive welding disk be electrically connected with described conduction stake is provided with on the surface at one of described frame body, the surface of described frame body is not arranged the position of conductive welding disk for chip placement, described conductive welding disk can be connect by metal wire and described chip electrical, and described frame body adopts insulating material to make.
Further, the thickness of described lead frame is 60 ~ 150 microns.
Further, described conductive welding disk surface and the conduction exposed surface of stake all cover one deck NiPdAu layer.
Further, described conduction stake protrudes from described frame body, so that be electrically connected with external component.
Further, described conductive welding disk area coverage is greater than the end area of described conduction stake.
The utility model also provides a kind of encapsulating structure adopting above-mentioned lead frame, comprise lead frame and chip, described lead frame comprises frame body and multiple conduction stake running through described frame body, the conductive welding disk be electrically connected with described conduction stake is provided with on the surface at one of described frame body, described chip is placed in the position surface of described frame body not being arranged conductive welding disk, described conductive welding disk is connect by metal wire and described chip electrical, and described frame body adopts insulating material to make.
The utility model has the advantage of: 1, adopt insulated lead frame body supporting chip, plastic packaging Hou Wuji exposes on island, can realize the QFN/DFN package requirements exposed without Ji Dao; 2, the structural design of framework can be made more reasonable, effectively improve routing layout, shorten line length, reduce routing risk; 3, more effectively can utilize the space in plastic-sealed body, realize the encapsulation of small-sized package body; 4, the utility model does not have metal based on the design of conventional frame relatively on Cutting Road, arranging density can be made higher, can effectively reduce costs.
Accompanying drawing explanation
Fig. 1 and Fig. 2 is the structural representation of existing packaging body;
Fig. 3 is the structural representation of the utility model for the lead frame of non-leaded package;
Fig. 4 is the step schematic diagram of the utility model for the manufacture method of the lead frame of non-leaded package;
Fig. 5 A ~ Fig. 5 E is the Making programme figure of the utility model for the lead frame of non-leaded package;
Fig. 6 is the structural representation of the encapsulating structure adopting the utility model lead frame.
Embodiment
What provide the utility model below in conjunction with accompanying drawing elaborates for the lead frame of non-leaded package and the embodiment of encapsulating structure.Accompanying drawing only for illustration of the structure of the utility model lead frame, and is not used in the size relationship limited between the utility model all parts.
See Fig. 3, the lead frame 30 that the utility model is used for non-leaded package comprises frame body 31 and multiple conduction stake 32 running through described frame body 31.
Described lead frame body 31 adopts insulating material to make, and described insulating material can adopt insulating material well known in the prior art, and the utility model does not limit.In this embodiment, described frame body 31 thinner thickness is film framework body.
Described conduction stake 32 is made up of electric conducting material, runs through described frame body 31, i.e. the two ends of described conduction stake 32 expose from the two sides of described frame body 31.Further, in this embodiment, described conduction stake 32 protrudes from described frame body 31, is electrically connected so that follow-up with external component, and its effect is similar to the pin of pin series products.
The conductive welding disk 33 be electrically connected with described conduction stake 32 is provided with on the surface at one of described frame body 31.Described conductive welding disk 33 directly overlays described conduction stake 32 and is exposed on the end face on described frame body 31 surface.Further, described conductive welding disk 33 area coverage is greater than the end area of described conduction stake 32, and described conductive welding disk 33 adopts same material to make with described conduction stake 32, such as copper.In this embodiment, described conductive welding disk 33 surface and the conduction exposed surface of stake 31 all cover one deck NiPdAu layer 34, to improve electric conductivity, see NiPdAu layer 34, exaggerate the thickness of NiPdAu layer 34 in the accompanying drawings in order to clearer.
Further, the thickness of described lead frame 30 is 60 ~ 150 microns, and described thickness refers to the gross thickness of lead frame 30, its with the thickness of frame body 31 or conduction stake 32 and conductive welding disk 33 gross thickness in the maximum be as the criterion.
The position surface of described frame body 31 not being arranged conductive welding disk 33 indicates in figure 6 for chip placement 40(), described conductive welding disk 33 can be indicated in figure 6 by metal wire 50() be electrically connected with described chip 40.Described frame body 31 adopts insulating material to make, and supporting chip 40, under the prerequisite ensureing chip 40 welding and metal wire 50 bonding wire stability, achieve the encapsulation exposed without Ji Dao.
The utility model also provides a kind of manufacture method of lead frame 30, and see Fig. 4, described method comprises the steps: step S40, provides frame body, and described frame body is made up of insulating material, at surface coverage one metal level of described frame body; Step S41, described frame body another surface make multiple hole, described frame body is run through in described hole until metal level; Step S42, in described hole, fill metal, form the conduction stake running through described frame body; Step S43, etch described metal level, form the conductive welding disk be electrically connected with described conduction stake.
The Making programme figure of the utility model for the lead frame of non-leaded package see Fig. 5 A ~ Fig. 5 E.
See step S40 and Fig. 5 A, provide frame body 51, described frame body 51 is made up of insulating material, at surface coverage one metal level 52 of described frame body 51.Described insulating material can adopt insulating material well known in the prior art, and the utility model does not limit.In this embodiment, described frame body 51 thinner thickness is film framework body.The conducting metal that described metal level 52 can be commonly used for this area, such as copper.
See step S41 and Fig. 5 B, make multiple hole 53 on another surface of described frame body 51, described frame body 51 is run through in described hole 53 until metal level 52.The method of laser drill is adopted to make multiple hole 53 on another surface of described frame body 51 in this embodiment.
See step S42 and Fig. 5 C, in described hole 53, fill metal, form the conduction stake 54 running through described frame body 51.The metal of filling can be identical with the metal species of described metal level 52, such as, be copper.Described filling can adopt electric plating method to fill.Further, in this embodiment, described conduction stake 54 protrudes from described frame body 51, is electrically connected so that follow-up with external component, and its effect is similar to the pin of pin series products.
See step S43 and Fig. 5 D, etch described metal level 52, form the conductive welding disk 55 be electrically connected with described conduction stake 54.The method of mask lithography can be adopted in this embodiment to etch described metal level 52, form the conductive welding disk 55 be electrically connected with described conduction stake 54.The method of described mask lithography is prior art, in this only its process of simple declaration: 1, at metal level 52 surface coverage mask; 2, expose; 3, develop; 4, etch; 5, remove mask, form conductive welding disk 55.
See Fig. 5 E, after step S43 etches described metal level 52 step, also comprise one and all cover the step of one deck NiPdAu layer 56 on conductive welding disk 55 surface and the conduction exposed surface of stake 54, this step can adopt electric plating method to realize.
See Fig. 6, the utility model also provides a kind of encapsulating structure adopting above-mentioned lead frame, and described encapsulating structure comprises lead frame 30 and chip 40, and described lead frame 30 comprises frame body 31 and multiple conduction stake 32 running through described frame body.The conductive welding disk 33 be electrically connected with described conduction stake 32 is provided with on the surface at one of described frame body 31.Described chip 40 is placed in the position surface of described frame body 31 not being arranged conductive welding disk 33, and described chip 40 is bonded on frame body 31 by binding agent 70.Described conductive welding disk 33 is electrically connected with described chip 40 by metal wire 50, and described frame body 31 adopts insulating material to make.Its complementary space of described encapsulating structure adopts epoxy resin 60 to fill.
The above is only preferred implementation of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (6)
1. the lead frame for non-leaded package, it is characterized in that, comprise frame body and multiple conduction stake running through described frame body, the conductive welding disk be electrically connected with described conduction stake is provided with on the surface at one of described frame body, the surface of described frame body is not arranged the position of conductive welding disk for chip placement, described conductive welding disk can be connect by metal wire and described chip electrical, and described frame body adopts insulating material to make.
2. the lead frame for non-leaded package according to claim 1, is characterized in that, the thickness of described lead frame is 60 ~ 150 microns.
3. the lead frame for non-leaded package according to claim 1, is characterized in that, described conductive welding disk surface and the conduction exposed surface of stake all cover one deck NiPdAu layer.
4. the lead frame for non-leaded package according to claim 1, is characterized in that, described conduction stake protrudes from described frame body, so that be electrically connected with external component.
5. the lead frame for non-leaded package according to claim 1, is characterized in that, described conductive welding disk area coverage is greater than the end area of described conduction stake.
6. adopt the encapsulating structure of lead frame according to claim 1, it is characterized in that, comprise lead frame and chip, described lead frame comprises frame body and multiple conduction stake running through described frame body, the conductive welding disk be electrically connected with described conduction stake is provided with on the surface at one of described frame body, described chip is placed in the position surface of described frame body not being arranged conductive welding disk, described conductive welding disk is connect by metal wire and described chip electrical, and described frame body adopts insulating material to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520871294.5U CN205122576U (en) | 2015-11-04 | 2015-11-04 | A lead frame and packaging structure for having pin packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520871294.5U CN205122576U (en) | 2015-11-04 | 2015-11-04 | A lead frame and packaging structure for having pin packaging structure |
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| Publication Number | Publication Date |
|---|---|
| CN205122576U true CN205122576U (en) | 2016-03-30 |
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| CN201520871294.5U Active CN205122576U (en) | 2015-11-04 | 2015-11-04 | A lead frame and packaging structure for having pin packaging structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655315A (en) * | 2015-11-04 | 2016-06-08 | 上海凯虹电子有限公司 | Lead wire framework used for packaging structure without pin and manufacturing method thereof, and packaging structure |
| CN109860165A (en) * | 2018-12-29 | 2019-06-07 | 广东晶科电子股份有限公司 | A kind of LED component and preparation method thereof |
-
2015
- 2015-11-04 CN CN201520871294.5U patent/CN205122576U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655315A (en) * | 2015-11-04 | 2016-06-08 | 上海凯虹电子有限公司 | Lead wire framework used for packaging structure without pin and manufacturing method thereof, and packaging structure |
| CN109860165A (en) * | 2018-12-29 | 2019-06-07 | 广东晶科电子股份有限公司 | A kind of LED component and preparation method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |