CN109860165A - A kind of LED component and preparation method thereof - Google Patents
A kind of LED component and preparation method thereof Download PDFInfo
- Publication number
- CN109860165A CN109860165A CN201811645923.7A CN201811645923A CN109860165A CN 109860165 A CN109860165 A CN 109860165A CN 201811645923 A CN201811645923 A CN 201811645923A CN 109860165 A CN109860165 A CN 109860165A
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- zener diode
- led chip
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- conducting bracket
- led
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000002184 metal Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 150000002739 metals Chemical class 0.000 claims 1
- 230000006872 improvement Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 2
- 238000010009 beating Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
The invention discloses a kind of LED components and preparation method thereof.The LED component includes: support plate, the positive conducting bracket being set on support plate and negative conducting bracket and the LED chip being set on negative conducting bracket and Zener diode；Zener diode is arranged close to LED chip, and the difference in height between Zener diode and LED chip is less than the difference in height between Zener diode and positive conducting bracket；The cathode of LED chip is connect with negative conducting bracket, and the first contact is provided on positive gridline, and the first contact is set on the positive gridline nearest apart from Zener diode；The anode of Zener diode is connect with negative conducting bracket, and cathode is connect by the first conducting wire with the first contact.LED component of the invention and preparation method thereof can prevent positive conducting bracket from occupying the placement space of LED chip.
Description
Technical field
The present invention relates to LED technology fields more particularly to a kind of LED component and preparation method thereof.
Background technique
High power LED device relies on high brightness, advantage small in size, little power consumption, is applied to auto lamp, flashlight, dance
In the various luminaires such as desk lamp, mine lamp, it is with a wide range of applications.
As shown in Figure 1, in order to reduce by 104 current density of solid conductor in high power LED device 100, LED chip 101
Anode be usually disposed as lattice-shaped, and on positive gridline be arranged contact 103, with pass through 104 connecting contact of conducting wire
103 and conducting bracket；Wherein, the cathode of the LED chip 101 is directly connect with negative conducting bracket 105, and the LED chip 101 is just
Pole gridline 103 is connect by contact 104 and conducting wire 104 with positive conducting bracket 106.In addition, electrostatic breakdown LED in order to prevent
Chip 101 is additionally provided with Zener diode 107 in the LED component 100, the anode of the Zener diode 107 directly with negative conduction
Bracket 105 connects, and the cathode of the Zener diode 107 is connect by conducting wire 104 with positive conducting bracket 106.However, inventor exists
Implement to find when the present invention: due to needing setting one to be used for the protrusion 108 of routing on positive conducting bracket 106, so as to Zener diode
107 cathode is connect by conducting wire 104 with the protrusion 108, this, which allows for the protrusion 108, can occupy the placement space of LED chip,
The size of LED chip is limited, and then limits the light-emitting area of LED chip.
Summary of the invention
In view of the above-mentioned problems, a kind of LED component and preparation method thereof of the invention, can remove beating on positive conducting bracket
Line protrusion avoids positive conducting bracket from occupying the placement space of LED chip, makes to use the biggish LED chip of light-emitting area
Make LED component.
In order to solve the above technical problems, a kind of LED component of the invention includes: support plate, is set on the support plate just
Conducting bracket and negative conducting bracket and the LED chip being set on the negative conducting bracket and Zener diode；Wherein,
The Zener diode is arranged close to the LED chip, and high between the Zener diode and the LED chip
Degree difference is less than difference in height between the Zener diode and the positive conducting bracket；
The cathode of the LED chip is connect with the negative conducting bracket, and the first contact, institute are provided on positive gridline
The first contact is stated to be set on the positive gridline nearest apart from the Zener diode；
The anode of the Zener diode is connect with the negative conducting bracket, and cathode is connect by the first conducting wire with described first
Contact element connection.
Compared with prior art, it is connect since LED component of the invention is provided with first on the positive gridline of LED chip
Contact element, so that the cathode of Zener diode is directly connect with first contact by the first conducting wire to realize routing, Jin Erke
The protrusion being set on existing positive conducting bracket is removed, avoids positive conducting bracket from occupying the placement space of LED chip, to use
LED chip with bigger light-emitting area makes LED component.In addition, by Zener diode close to LED core in the LED component
Piece setting, and because the difference in height between the Zener diode and LED chip is less than between Zener diode and positive conducting bracket
Difference in height can shorten the length of the first conducting wire so that the loop height of the first conducting wire reduces, avoid the mistake because of the first conducting wire
It grows and is easily positioned at outside lens, the size of the length limitation lens base product of the first conducting wire is prevented, convenient for lesser using size
Lens realize the encapsulation of device, reduce the package dimension of high power LED device, reduce cost of manufacture.
As an improvement of the above scheme, the difference in height between the Zener diode and the LED chip is less than described neat
The difference in height received between diode and the positive conducting bracket.
As an improvement of the above scheme, it is additionally provided at least two second contacts on the positive gridline, described the
Two contacts are set on the positive gridline nearest apart from the positive conducting bracket.
At least two second contact is connect by the second conducting wire with the positive conducting bracket.
As an improvement of the above scheme, at least two metal blocks are provided on the positive conducting bracket；
At least two metal block and at least two second contact pass through the one-to-one connection of the second conducting wire.
As an improvement of the above scheme, the top of the metal block is higher than the top of the LED chip.
As an improvement of the above scheme, the anode of the cathode of the LED chip and the Zener diode passes through conducting resinl
Body is connect with the negative conducting bracket.
As an improvement of the above scheme, the LED chip is vertical-type LED chip.
As an improvement of the above scheme, lens are additionally provided on the support plate, the lens are for covering the LED core
Piece and the Zener diode.
In order to solve the above technical problems, including the following steps: the present invention also provides a kind of production method of LED component
The anode of the cathode of LED chip and Zener diode is fixed on to the negative conducting bracket of support plate by conductive rubber
On；Wherein, the Zener diode is arranged close to the LED chip, and between the Zener diode and the LED chip
Difference in height is less than the difference in height between the Zener diode and positive conducting bracket；
The first contact is made on the nearest positive gridline of Zener diode described in distance in the LED chip；
The cathode of first contact and the Zener diode is attached using the first conducting wire.
Compared with prior art, the production method of LED component of the invention on the positive gridline of LED chip by making
Make the first contact, so that the cathode of Zener diode can directly connect to realize and beat with first contact by the first conducting wire
Line, and then can remove the protrusion being set on positive conducting bracket, the placement for avoiding existing positive conducting bracket from occupying LED chip is empty
Between, to make LED component using the LED chip with bigger light-emitting area.In addition, by two pole of Zener in the production method
It manages close to LED chip setting, and the difference in height between Zener diode and LED chip is made to be less than Zener diode and positive conductive branch
Difference in height between frame can reduce the loop height of the first conducting wire, and then shorten the length of the first conducting wire, avoid leading because of first
Line is too long and is easily positioned at outside lens, prevent the first conducting wire length limitation lens base product size, convenient for using size compared with
Small lens realize the encapsulation of device, reduce the package dimension of high power LED device, reduce cost of manufacture.
As an improvement of the above scheme, the difference in height between the Zener diode and the LED chip is less than described neat
The difference in height received between diode and the positive conducting bracket.
As an improvement of the above scheme, the nearest positive gridline of Zener diode described in distance in the LED chip
Further include following steps after the first contact of upper production:
Production has at least two second on the nearest positive gridline of positive conducting bracket described in distance in the LED chip
Contact；
At least two second contact is connect with the positive conducting bracket using the second conducting wire and is attached.
As an improvement of the above scheme, consolidated by the anode of the cathode of LED chip and Zener diode by conductive rubber
Further include following steps before on the negative conducting bracket of support plate:
At least two metal blocks are welded on the positive conducting bracket, so that at least two second contact passes through institute
State the second conducting wire and the one-to-one connection of at least two metal blocks.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing high power LED device.
Fig. 2 is a kind of structural schematic diagram of LED component of the embodiment of the present invention 1.
Fig. 3 is the electrical connection schematic diagram of LED chip and Zener diode in the embodiment of the present invention 1.
Fig. 4 is the setting schematic diagram of metal block in the embodiment of the present invention 1.
Fig. 5 is the partial enlargement diagram that Zener diode is connect with LED chip in the embodiment of the present invention 1.
Specific embodiment
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention.But the present invention can be with
It is different from the other modes of this description much to implement, those skilled in the art can be without violating the connotation of the present invention
Similar popularization is done, therefore the present invention is not limited by the specific embodiments disclosed below.
Clear, complete description is carried out to technical solution of the present invention with attached drawing combined with specific embodiments below.
Embodiment 1
Fig. 2 is referred to, is a kind of structural schematic diagram of LED component of the embodiment of the present invention 1.
As shown in Fig. 2, a kind of LED component 10 includes: support plate 1, the positive conducting bracket 11 being set on support plate 1 and negative leads
Electric bracket 12 and the LED chip 13 being set on negative conducting bracket 12 and Zener diode 14；Wherein, Zener diode 14
It is arranged close to LED chip 13, the width between Zener diode 14 and positive conducting bracket 12 is not more than Zener diode 14 and LED
Width between chip, and the difference in height between Zener diode 14 and LED chip 13 is less than Zener diode 14 and positive conduction
Difference in height between bracket 11；The cathode of LED chip 13 is connect with negative conducting bracket 12, and is provided on positive gridline 131
One contact 132, the first contact 132 are set on the positive gridline 131 nearest apart from Zener diode 14；Two pole of Zener
The anode of pipe 14 is connect with negative conducting bracket 12, and cathode is connect by the first conducting wire 15 with the first contact 132.
Compared with prior art, it is arranged on the positive gridline 131 of LED chip 13 due to LED component 10 of the invention
There is the first contact 132, so that the cathode of Zener diode 14 is directly connect with first contact 132 by the first conducting wire 15
It realizes routing, and then can remove the protrusion being set on existing positive conducting bracket, avoid the positive conducting bracket 11 from occupying LED chip
13 placement space, to make LED component using the LED chip 13 with bigger light-emitting area, to increase LED component 10
Light-emitting surface, promoted LED component 10 light emission luminance.In addition, by Zener diode 14 close to LED chip in the LED component 10
13 settings, and because the difference in height between Zener diode 14 and LED chip 13 is less than Zener diode 14 and positive conducting bracket
Difference in height between 11, can reduce the loop height of the first conducting wire 15, and then can shorten the length of the first conducting wire 15, avoid because
First conducting wire 15 is too long and is easily positioned at outside lens, prevents the size of 19 floor space of length limitation lens of the first conducting wire 15, just
In the encapsulation for realizing device using the lesser lens of dimensioned area, reduce the package dimension of high power LED device, reduction is fabricated to
This.
Wherein, as shown in Figures 2 and 3, in LED component of the invention, Zener diode 14 is connected anti-parallel to LED chip
13 both ends, to carry out electrostatic protection to LED chip 13.
Further, as shown in Fig. 2, in order to shorten between the positive gridline 131 of LED chip 13 and positive conducting bracket 11
Routing distance and the second conducting wire 16 length, be additionally provided at least two second on the positive gridline 131 of the LED chip 13
Contact 133, the second contact 133 are set on the positive gridline 131 nearest apart from positive conducting bracket 11, and this at least two
A second contact 133 is connect by the second conducting wire 16 with positive conducting bracket 11.
Preferably, as shown in Figure 2 and Figure 4, in the LED component 10, at least two gold medals are provided on positive conducting bracket 11
Belong to block 17, wherein metal block 17 is set to the nearest position setting of distance the second contact 133, at least two metal block 17
Pass through the one-to-one connection of the second conducting wire 16 at least two second contacts 133.
In this embodiment, due to being provided with metal block 17 on positive conducting bracket 11, then LED chip 13 is increased
The routing position of two contacts 133 and positive conducting bracket 11 can further contract so that the loop height of the second conducting wire 16 is lower
The length of short second conducting wire 16 avoids the second conducting wire 16 from being placed in outside lens 19, prevents the size of the second conducting wire 16 limitation lens 19.
Wherein, as shown in Figure 2 and Figure 5, the Zener diode 14 in the LED component passes sequentially through the first conducting wire 15, first
Contact 132, the positive gridline 131 of LED chip 13, the second conducting wire 16 and metal block 17 are connected on positive conducting bracket 11,
So that electric signal is conducted from positive conducting bracket 11 to Zener diode 14.Preferably, the top of the metal block 17 is higher than LED chip
13 top avoids setting in encapsulation process because deformation occurs for the second conducting wire 16 further to shorten the length of the second conducting wire 16
In outside lens 19.
Preferably, as shown in figure 4, in above-mentioned LED component, LED chip 13 is vertical-type LED chip 13, Zener diode
14 be vertical-type Zener diode 14, the anode of the cathode of the LED chip 13 and Zener diode 14 by conductive rubber 110 with
Negative conducting bracket 12 is directly connected to, and metal block 17 is connect by conductive rubber 110 with positive conducting bracket 11.
Preferably, as shown in Figure 2 and Figure 4, it in above-mentioned LED component, is provided with just between positive conducting bracket 11 and negative conduction
Cathode channel 18 is positive conducting bracket 11 and negative conduction to be isolated；Lens 19 are additionally provided on support plate 1, the lens 19
Bottom surface covering LED chip 13 and Zener diode 14 are to realize encapsulation, and the light issued to LED chip 13 reflects.Wherein,
The material of the lens 19 includes silicone resin, epoxy resin or glass.
It should be understood that in embodiment 1 only by taking the positive gridline 131 of LED chip 13 is lateral gridline as an example into
Row explanation, which can be with longitudinally disposed.
Embodiment 2
The present invention also provides a kind of production methods of LED component, include the following steps:
S1, the negative conductive branch that the anode of the cathode of LED chip and Zener diode is fixed on to support plate by conductive rubber
On frame；Wherein, the Zener diode is arranged close to the LED chip, and between the Zener diode and the LED chip
Difference in height be less than difference in height between the Zener diode and positive conducting bracket；
S2, the first contact is made on the nearest positive gridline of Zener diode described in distance in the LED chip；
S3, the cathode of first contact and the Zener diode is attached using the first conducting wire.
Compared with prior art, the production method of LED component of the invention on the positive gridline of LED chip by making
Make the first contact, so that the cathode of Zener diode can directly connect to realize and beat with first contact by the first conducting wire
Line, and then can remove the protrusion being set on positive conducting bracket, the placement for avoiding existing positive conducting bracket from occupying LED chip is empty
Between, to make LED component using the LED chip with bigger light-emitting area, to increase the light-emitting surface of LED component 10, mention
Rise the light emission luminance of LED component 10.In addition, Zener diode is arranged close to LED chip in the production method, and because Zener
Difference in height between diode and LED chip is less than the difference in height between Zener diode and positive conducting bracket, can reduce the
The loop height of one conducting wire shortens the length of the first conducting wire, avoids being easily positioned at outside lens because the first conducting wire is too long, prevents the
The floor space size of the length limitation lens of one conducting wire is reduced big convenient for being realized the encapsulation of device using the lesser lens of size
The package dimension of power led device reduces cost of manufacture.
Preferably, in above-mentioned implementation, the difference in height of setting Zener diode and LED chip is less than Zener diode and just
Difference in height between conducting bracket can further shorten the length of the first conducting wire
Further, in order to which the routing distance and second shortened between LED component anode gridline and positive conducting bracket is led
The length of line further includes following steps upon step s 2 in the production method of the LED component:
S21, production has at least two second contacts on the nearest positive gridline of the positive conducting bracket of distance in LED chip
Part；
S22, it at least two second contacts is connect with positive conducting bracket using the second conducting wire is attached.
Further, in the production method of the LED component, by the anode of the cathode of LED chip and Zener diode
Further include following steps before being fixed on the negative conducting bracket of support plate by conductive rubber:
S11, at least two metal blocks are welded on positive conducting bracket, so that at least two second contacts are led by second
Line and the one-to-one connection of at least two metal blocks；Wherein, which is set to the nearest position setting of the second contact of distance.
In this embodiment, due to being provided with metal block on positive conducting bracket, then the contact of LED chip second is increased
The routing position of part and positive conducting bracket can further shorten the second conducting wire so that the loop height of the second conducting wire is lower
Length avoids the second conducting wire from being placed in outside lens, prevents limitation of second conducting wire to lens sizes.
Preferably, in the production method of the LED component, after step s 3, further includes: lens are pasted on LED core
On piece and Zener diode, lens is enabled to cover the LED chip and the Zener diode simultaneously, and LED chip is issued
Light is reflected.
The above described is only a preferred embodiment of the present invention, limitation in any form not is done to the present invention, therefore
All contents without departing from technical solution of the present invention, it is made to the above embodiment according to the technical essence of the invention any simply to repair
Change, equivalent variations and modification, all of which are still within the scope of the technical scheme of the invention.
Claims (10)
1. a kind of LED component characterized by comprising support plate, the positive conducting bracket being set on the support plate and negative conductive branch
Frame and the LED chip being set on the negative conducting bracket and Zener diode；Wherein,
The Zener diode is arranged close to the LED chip, and the height between the Zener diode and the LED chip
Difference is less than the difference in height between the Zener diode and the positive conducting bracket；
The cathode of the LED chip is connect with the negative conducting bracket, is provided with the first contact on positive gridline, and described
One contact is set on the positive gridline nearest apart from the Zener diode；
The anode of the Zener diode is connect with the negative conducting bracket, and cathode passes through the first conducting wire and first contact
Connection.
2. LED component as described in claim 1, which is characterized in that be additionally provided at least two the on the anode gridline
Two contacts, second contact are set on the positive gridline nearest apart from the positive conducting bracket；
At least two second contact is connect by the second conducting wire with the positive conducting bracket.
3. LED component as claimed in claim 2, which is characterized in that be provided at least two metals on the positive conducting bracket
Block；
At least two metal block and at least two second contact pass through the one-to-one connection of the second conducting wire.
4. LED component as claimed in claim 3, which is characterized in that the top of the metal block is higher than the top of the LED chip
Portion.
5. LED component as described in any one of claims 1 to 4, which is characterized in that the cathode of the LED chip and described
The anode of Zener diode is connect by conductive rubber with the negative conducting bracket.
6. LED component as described in any one of claims 1 to 4, which is characterized in that the LED chip is vertical-type LED core
Piece.
7. LED component as described in any one of claims 1 to 4, which is characterized in that be additionally provided on the support plate
Mirror, the lens are for covering the LED chip and the Zener diode.
8. a kind of production method of LED component, which comprises the steps of:
The anode of the cathode of LED chip and Zener diode is fixed on the negative conducting bracket of support plate by conductive rubber；Its
In, the Zener diode is arranged close to the LED chip, and the height between the Zener diode and the LED chip
Difference is less than the difference in height between the Zener diode and positive conducting bracket；
The first contact is made on the nearest positive gridline of Zener diode described in distance in the LED chip；
The cathode of first contact and the Zener diode is attached using the first conducting wire.
9. production method as claimed in claim 8, which is characterized in that the Zener diode described in distance in the LED chip
Further include following steps after making the first contact on nearest positive gridline:
Production has at least two second contacts on the nearest positive gridline of positive conducting bracket described in distance in the LED chip
Part；
At least two second contact is connect with the positive conducting bracket using the second conducting wire and is attached.
10. production method as claimed in claim 9, which is characterized in that by the cathode of LED chip and Zener diode just
Further include following steps before pole is fixed on the negative conducting bracket of support plate by conductive rubber:
At least two metal blocks are welded on the positive conducting bracket, so that at least two second contact passes through described the
Two conducting wires and the one-to-one connection of at least two metal blocks.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811645923.7A CN109860165A (en) | 2018-12-29 | 2018-12-29 | A kind of LED component and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811645923.7A CN109860165A (en) | 2018-12-29 | 2018-12-29 | A kind of LED component and preparation method thereof |
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| CN109860165A true CN109860165A (en) | 2019-06-07 |
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| CN201811645923.7A Pending CN109860165A (en) | 2018-12-29 | 2018-12-29 | A kind of LED component and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021052143A (en) * | 2019-09-26 | 2021-04-01 | ローム株式会社 | Semiconductor light emitting device |
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| CN205122576U (en) * | 2015-11-04 | 2016-03-30 | 上海凯虹电子有限公司 | A lead frame and packaging structure for having pin packaging structure |
| WO2018229176A1 (en) * | 2017-06-15 | 2018-12-20 | Commissariat à l'énergie atomique et aux énergies alternatives | Under-bump metallisation structure and corresponding production method |
| CN209389031U (en) * | 2018-12-29 | 2019-09-13 | 广东晶科电子股份有限公司 | A kind of LED component |
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| JP2021052143A (en) * | 2019-09-26 | 2021-04-01 | ローム株式会社 | Semiconductor light emitting device |
| JP7332412B2 (en) | 2019-09-26 | 2023-08-23 | ローム株式会社 | semiconductor light emitting device |
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