CN202549841U - Semiconductor module - Google Patents
Semiconductor module Download PDFInfo
- Publication number
- CN202549841U CN202549841U CN201220180854.9U CN201220180854U CN202549841U CN 202549841 U CN202549841 U CN 202549841U CN 201220180854 U CN201220180854 U CN 201220180854U CN 202549841 U CN202549841 U CN 202549841U
- Authority
- CN
- China
- Prior art keywords
- resin
- lead frame
- semiconductor
- semiconductor module
- lower bolster
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The utility model provides a high-credibility semiconductor module of which a lower backup plate does not displace according to molding resin filling. According to the semiconductor module, a lead frame with a semiconductor element, a lower backup plate and a lead is used, a lead frame assembly on which a plurality of semiconductor elements are carried is carried on a mold, molding resin is filled into an exhaust passage side from gates of the mould, and resin packaging is performed, wherein the exhaust passage side serving as the tail end of the lower backup plate is provided with a frame penetration area of the passage of the molding resin relative to flow of the molding resin. In addition, the lead frame is a thin sheet-shaped DIP (Double In-Line Package) type packaging structure with the same thickness between the upper part of a resin package and the lower part of the resin package; and for the gates, double gates are arranged in the side face, and the molding resin is filled in the length direction.
Description
Technical field
The utility model relates to semiconductor module, particularly on lead frame, carries a plurality of semiconductor elements and has carried out the semiconductor module of resin-encapsulated.
Background technology
When using a plurality of semiconductor chip, the semiconductor modules that use the structure that is described below: on the lower bolster of lead frame, be equipped with semiconductor element, the mold resin high with insulating properties carried out resin-encapsulated more.In this semiconductor module, for example many uses are not to carry out simple switch motion, but have considered that fail safe etc. carries out more complicated action IPM (Intelligent Power Module).In IPM; Use power semiconductor that switch element (IGBT:Insulated Gate Bipolar Transistor etc.) constitutes and the IC (Integrated Circuit) that is used to control this switch element to wait simultaneously and control semiconductor element; They are carried out resin-encapsulated, in power inverters such as inverter, use.
At this moment, use lead frame and these semiconductor elements to constitute the circuit among the IPM, lead frame not only becomes the supporting substrate of these semiconductor elements, but also constitutes the distribution in this circuit.Therefore, in the structure of this semiconductor module, on the lower bolster of patterned lead frame, be equipped with each semiconductor element.In addition, constitute and around lower bolster, be provided with a plurality of lead-in wires, this lead-in wire is from the outstanding structure of mould layer.The part that should give prominence to becomes the input and output terminal in this semiconductor module.Because lead frame becomes the part of distribution, therefore constitute by conductance high copper or copper alloy.
In addition, when making semiconductor module,, when carrying out resin-encapsulated, also require the high resin fillibility for complex inner structure.Disclose the content that is described below as prior art: on the extension of chip erecting bed, form through hole; Make the spatial communication of table back of the body two sides side, the resin pressure balance when resin is filled is (for example, with reference to patent documentation 1; Fig. 1); Thus, can prevent the displacement of chip erecting bed, improve fillibility.
[patent documentation 1] TOHKEMY 2000-150553 communique
Generally, semiconductor module is a composite semiconductor, carries a plurality of semiconductor elements, and the pattern of the lower bolster of lead frame is also complicated, and package dimension is also big.
But; There is the problem that is described below in the prior art: have fin; Though fill to Width from the length end face effectively; But water oral-lateral because through hole is positioned at the resin injection, therefore exist in when the length direction potting resin, fill path is long, lower bolster can be subjected to displacement halfway.
The utility model content
Therefore, the utility model is accomplished in order to address the above problem, and its purpose is, the semiconductor module that is described below is provided: at resin in the structure that the length direction of packaging body flows, control moulding resin flow property, so lower bolster can displacement.
In order to address the above problem, the utlity model has the structure that is described below.
The semiconductor module of the utility model; Use had the lead frame of semiconductor element, lower bolster and lead-in wire and carry lead frame assembly that a plurality of semiconductor elements obtain carry and put on the mold mould; Fill the mold resin from the cast gate of mold mould to the exhaust duct side; Carry out resin-encapsulated, be provided with the framework that becomes the round about way of mold resin with respect to the mold resin flow in exhaust duct side and connect the district as the least significant end of lower bolster.
In addition, be resin-encapsulated top and the identical laminal DIP type encapsulating structure of thickness between the resin-encapsulated bottom for lead frame, about cast gate, have the double teeming mouth in the side, filled the mold resin in the longitudinal direction.
The utlity model has the effect that is described below: connect the district owing on the lower bolster least significant end of lead frame, have framework, therefore can provide the lower bolster can be owing to the mold resin is filled and the semiconductor module of the high confidence level of displacement.
Description of drawings
Fig. 1 is the vertical view of lead frame of semiconductor module of the embodiment 1 of the utility model.
Fig. 2 is the vertical view of lead frame assembly of semiconductor module of the embodiment 1 of the utility model.
Fig. 3 is the perspective plan view of semiconductor module of the embodiment 1 of the utility model.
Fig. 4 is the external surface figure of semiconductor module of the embodiment 1 of the utility model.
Fig. 5 is the cutaway view that the mold resin flow to general semiconductor module describes.
Fig. 6 is the cutaway view that the mold resin flow to the semiconductor module of the embodiment 1 of the utility model describes.
Fig. 7 is the experimental result picture of the resin of the embodiment 1 of the utility model when filling.
Symbol description
1: lead frame; 2: lower bolster (low side is used lower bolster); 3: lower bolster (the high-end lower bolster of using); 4: lower bolster (lower bolster is used in control); 5: inner lead; 6: supporting wire; 7: outside lead; 8: tie-rod; 9: the framework frame; 10: framework connects the district; 11: the lead frame assembly; 12: power semiconductor (low side); 13: power semiconductor (high-end); 14: semiconductor element is used in control; 15: the mold resin; 16: cable; 17: screw portion; 18: protection semiconductor element (diode); 21: semiconductor module; 22: the mold mould (on); 23: mold mould (descending); 24: cast gate; 25: exhaust duct; 26: cavity (on); 27: cavity (descending).
Embodiment
Below, specify the mode that is used to implement the utility model with reference to accompanying drawing.But the utility model at all is not limited to following record.
[embodiment 1]
Below, describe with reference to the lead frame and the semiconductor module of accompanying drawing the embodiment 1 of the utility model.Fig. 1 is the vertical view of lead frame of the embodiment 1 of the utility model.
As shown in Figure 1, lead frame 1 is made up of lower bolster 2,3,4 and inner lead 5, supporting wire 6, outside lead 7, tie-rod 8, framework frame 9, lead-in wire belt body 10.The lead frame 1 that in semiconductor, uses is generally made through flat metallic plate is carried out punch process.For example, can use copper or copper alloy for lead frame 1 with 0.4mm thickness.The pattern of the semiconductor module amount of here, stating after having represented.As the lead frame of reality, be connected with a plurality of these patterns.
Inner lead 5 has an end, and portion uses as wire-bonded.Another end is connected with tie-rod 8.
In supporting wire 6, an end is connected with each lower bolster 2,3,4, and another end is connected with lower bolster 8.Thus, support each lower bolster.
Externally go between in 7, an end is connected with supporting wire 6 with inner lead 5 via lower bolster 8.Another end is connected with the framework frame.This position becomes the outside terminal of semiconductor module.
Tie-rod 8 is connected maintenance with inner lead 5, supporting wire 6 and outside lead 7, and is connected with framework frame 9.Fixing by mechanically thus.
Framework connects district 10 and reduces the area of lower bolster 3 and the space of the lead frame pattern that obtains.Connect the table back of the body of lead frame, be not provided with inner lead etc.
Fig. 2 is the vertical view of lead frame assembly of the embodiment 1 of the utility model.As shown in Figure 2, lead frame assembly 11 carries power semiconductor 12 on the lower bolster 2, power semiconductor 13 is carried on lower bolster 3, will control semiconductor element 14 lift-launchs on lower bolster 4 through (not shown) such as scolders.Afterwards, be electrically connected with an end distribution of inner lead 5 with the surface electrode of cables such as golden fine rule 16 through lead wire connecting apparatus each semiconductor element.
Power semiconductor 12 is that overall dimension is N-channel MOS FET (the Metal Oxide Semiconductor Field Effect Transistor: the metal oxide film semiconductor field effect transistor) of 1.8mm * 3.0mm for low distolateral MOS.3 element mountings are respectively independently on the lower bolster 2.
Equally, power semiconductor 13 is high distolateral MOS, and overall dimension is 1.8mm * 3.0mm.3 element mountings are on common lower bolster 3.
Control semiconductor element 14 is MIC (Monolithic Integrated Circuit), and overall dimension is 3.7mm * 2.5mm and 2.7mm * 2.2mm.Be divided into low distolateral and high distolateral.
Afterwards,, carry out resin-encapsulated, form mold resin 15 through the transfer modling device.Resin-encapsulated with covering be equipped with the lower bolster 2,3,4, inner lead 5 of power semiconductor 12,13 and control semiconductor element 14, the mode of lead-in wire belt body 10 is carried out resin-encapsulated, outside lead 7, tie-rod 8, framework frame 9 are exposed to the outside.For example, can use thermosetting epoxy resin for mold resin 15.
Then, with reference to Fig. 3, Fig. 5, Fig. 6 the manufacturing approach of semiconductor module is described.With the mold mould (on) 22 with mold mould (descending) 23 be clamped in lead frame assembly 11 illustrated in fig. 2.Inject through cast gate 24 and to be heated softening mold resin 15 as the resin inlet of mold mould.
At this moment, because lead frame 2 is positioned at central authorities in the cross section in up and down, therefore by constituting as mold mould (on) cavity in 22 space (on) 26 with as the cavity (descending) 27 in the space of mold mould (descending) 23.Mold resin 15 flows to exhaust duct 25 from cast gate 24 in cavity.As shown in Figure 3, mold resin 15 is rectangle when overlooking, alongst (left and right directions among the figure) potting resin.Cast gate 24 all is provided with two places with exhaust duct 25.Be also referred to as the double teeming mouth.
In addition, because semiconductor module carries a plurality of semiconductor elements and parts etc., and wants to realize miniaturization, therefore on the pattern of lead frame, do not make the surplus in gap.Here, as other boarded parts, the lower bolster of lift-launch protection semiconductor element 18 (1.2mm * 1.2mm)., use cable 16 here, use the golden fine rule of 35 microns of diameters.
Thus, in the flowing of the mold resin 15 that arrives the exhaust duct side, difference is appearring up and down.Elder generation arrives owing to downside, so the expansion of the resin pressure of downside, acts on the power of oriented upside push framework.With reference to Fig. 5.Particularly, big near the displacement of the big lower bolster 3 of the area of least significant end, the short circuit of cable or disconnection can reduce the confidence level of semiconductor module.
Through using the lead frame 1 of the utility model; Owing on the lower bolster least significant end, exist the framework of up/down perforation to connect district 10; Therefore the resin that in cavity (descending) 27, flows arrives before exhaust duct 25 sides, and resin flows out to upside and the pressure of downside is fled to upside.With reference to Fig. 6.Thus, lower bolster can not be under pressure, and displacement can not occur.The result that Fig. 7 illustrates inventor's trial-production and estimates is the figure that bad incidence of displacement and framework connect sector width.If width is more than the 2.58mm, then can eliminate bad.
Afterwards, cut off to remove the maintaining part of lead frame 1 unwanted position, be tie-rod 8 and framework frame 9.Here, outside lead 7 is outstanding from the mold resin 15 of rectangular shape.This outside lead 7 uses as electric input and output terminal, is to be suitable for the shape (not shown) that substrate is installed by lead forming.Here, be rectangular encapsulation, have outside lead 7 and give prominence to from the length side, be bent into the roughly DIP of L font (Dual Inlin Package) type encapsulating structure.
Thus, accomplish semiconductor module 21 shown in Figure 4.
Then, the effect to the semiconductor module 21 of the foregoing description 1 describes.
In the utility model, with respect to resin flows to the exhaust duct side of mold mould, the upper face side of semiconductor module and below in the resin flows of side, the mold resin that at first arrives the downside of exhaust duct side produces counter-pressure, upwards pushes away the lower bolster of lead frame.At this moment, near the position exhaust duct side, that area is big (being lower bolster here), exert an influence.
The semiconductor module of the embodiment 1 of the utility model, in lead frame, on the lower bolster least significant end, having for the mold resin flow becomes circuitous framework perforation district.Thus, in resin-encapsulated, lower bolster is not filled and displacement according to the mold resin.In addition, also can be used as the not filling countermeasure of resin.The semiconductor module of high confidence level can be provided thus.
As stated, though put down in writing the mode that is used to implement the utility model, the knowledge capital those skilled in the art can openly obtain various replacement execution modes, embodiment from this.
At above-mentioned example,, also can be SOP (Small Outline Package) type semiconductor device though be the DIP type semiconductor device.Just the outside lead shape is different, and the effect during resin is filled is identical.
In addition, though be the double teeming mouth, also can be single cast gate.Generally be to use many cast gates in order to reduce pressure, but the resin flow situation is also identical in single cast gate, so the effect in the resin filling is identical.
Claims (3)
1. semiconductor module; It carries the lead frame assembly puts on the mold mould, fills the mold resin from the cast gate of said mold mould to the exhaust duct side, utilizes said mold resin that said lead frame assembly is carried out resin-encapsulated; Wherein, This lead frame assembly be to use have semiconductor element, the lead frame of lower bolster and lead-in wire, a plurality of said mounting semiconductor elements are obtained to said lead frame, this lower bolster is equipped with said semiconductor element; This lead-in wire and said semiconductor element are formed by connecting and are outside input and output terminal
This semiconductor module is characterised in that, is provided with the framework that becomes the round about way of said mold resin with respect to said mold resin flow in the said exhaust duct side as the least significant end of said lower bolster and connects the district.
2. semiconductor module according to claim 1 is characterized in that,
For said lead frame, for resin-encapsulated top and the identical laminal DIP type encapsulating structure of thickness between the resin-encapsulated bottom,, have the double teeming mouth in the side about said cast gate, be filled with said mold resin in the longitudinal direction.
3. semiconductor module according to claim 1 and 2 is characterized in that,
The width of said frame space is 2.58mm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-049858 | 2012-03-06 | ||
| JP2012049858A JP2013187268A (en) | 2012-03-06 | 2012-03-06 | Semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202549841U true CN202549841U (en) | 2012-11-21 |
Family
ID=47170427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201220180854.9U Expired - Fee Related CN202549841U (en) | 2012-03-06 | 2012-04-25 | Semiconductor module |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2013187268A (en) |
| CN (1) | CN202549841U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104867839A (en) * | 2014-02-21 | 2015-08-26 | 三垦电气株式会社 | Manufacturing method of semiconductor device and semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108257936B (en) * | 2018-01-03 | 2020-07-03 | 四川明泰电子科技有限公司 | DIP16 multi-chip packaging special-shaped lead frame and packaging method thereof |
-
2012
- 2012-03-06 JP JP2012049858A patent/JP2013187268A/en active Pending
- 2012-04-25 CN CN201220180854.9U patent/CN202549841U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104867839A (en) * | 2014-02-21 | 2015-08-26 | 三垦电气株式会社 | Manufacturing method of semiconductor device and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013187268A (en) | 2013-09-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121121 Termination date: 20210425 |