CN106783792A - There is a kind of plastic-sealed body lateral leads side to climb the encapsulating structure of tin performance - Google Patents
There is a kind of plastic-sealed body lateral leads side to climb the encapsulating structure of tin performance Download PDFInfo
- Publication number
- CN106783792A CN106783792A CN201710173105.0A CN201710173105A CN106783792A CN 106783792 A CN106783792 A CN 106783792A CN 201710173105 A CN201710173105 A CN 201710173105A CN 106783792 A CN106783792 A CN 106783792A
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- Prior art keywords
- pin
- tin
- plastic
- chip
- climb
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
- H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The present invention relates to a kind of plastic-sealed body lateral leads there is side to climb the encapsulating structure of tin performance, it includes pin（1）And Ji Dao（2）, the pin（1）It is arranged at Ji Dao（2）Around, the Ji Dao（2）Front passes through bonding material or solder（3）It is provided with chip（4）, the chip（4）By metal wire（5）With pin（1）It is electrically connected, the pin（1）Back side outside is provided with hypotenuse（7）, the pin（1）, Ji Dao（2）And hypotenuse（7）Surface is provided with tin layers（8）, the pin（1）, Ji Dao（2）And chip（4）Outer peripheral areas are encapsulated with plastic packaging material（6）.There is a kind of plastic-sealed body lateral leads of the present invention side to climb the encapsulating structure of tin performance, and it can be effectively increased the tin plating area in side, improve the welding performance of product and the reliability of welding.
Description
Technical field
The present invention relates to a kind of plastic-sealed body lateral leads there is side to climb the encapsulating structure of tin performance, the encapsulating structure draws
There is pin side to climb tin performance, belong to technical field of semiconductor encapsulation.
Background technology
With the development of modern science and technology, semiconductor packages is widely applied.It is in radar, remote-control romote-sensing, aviation boat
The extensive application of it etc. proposes higher and higher requirement to its reliability.And the failure caused by chip failure welding is also more next
The attention of people is more caused, it is irreversible because this failure is often fatal.Therefore, one is obtained in semicon industry
Individual good soldering reliability is very important, and the tin layers in semiconductor welding face can cause welding more firmly, particularly vapour
Car electronics.
It is well known that QFN (Quad Flat No-lead Package, four sides are without pin flat package) and DFN (Duad
Flat No-lead Package, bilateral is without pin flat package) it is leadless packages, its middle position has a large area naked
The pad of dew, with conductive force, is with the conductive welding disk for realizing electrical connection outside the encapsulation of big pad.Usual heat dissipation bonding pad
Mounted on circuit boards together with conductive welding disk.But exist in the prior art plastic-sealed body cutting after metal pins side without
Tin layers are electroplated in method coating, and directly contributing the tin cream on pcb board cannot climb up the metallic region of plastic packaging body side surface, so as to cause metal
The problem of pin side rosin joint or cold sweat, especially automotive electronics consider unusual in the safety using IC chip
Tightly, thus plastic-sealed body side metal pin to climb tin particularly critical.
To solve this problem, industry routine way is etched or cuts to lead frame pin back side outer end, forms water
Drop-wise or stair-stepping step, then electroplated, cutting operation is subsequently carried out again, so can be obtained by pin side step
On be electroplate with the encapsulating structure (referring to Figure 1A) of scolding tin so that improve its welding PCB when reliability.
But this kind of pin has the hot weld disk in the exposed pads and electrode contacts and PCB of the encapsulating structure bottom of step
When being welded, as shown in A in Figure 1B, at pin step easily remaining air cannot discharge, and cause scolding tin associativity not
It is good.Particularly when product works, the air for remaining in place in step because product is heated produces air expansion, and can be formd
Tin layers cracking between PCB pads and plastic-sealed body pin, causes the electrical functionality loose contact of integrated circuit, can also be direct when serious
Electrical functionality is caused to be stopped.
The content of the invention
The technical problems to be solved by the invention are directed to a kind of plastic-sealed body lateral leads of above-mentioned prior art offer to be had
The encapsulating structure of tin performance is climbed in side, and it can be effectively increased the tin plating area in side, and that improves the welding performance of product and welding can
By property.
The present invention the used technical scheme that solves the above problems is：There is a kind of plastic-sealed body lateral leads side to climb tin
The encapsulating structure of energy, it includes pin and Ji Dao, and the pin is arranged at around Ji Dao, and the Ji Dao fronts pass through bonding material
Or solder is provided with chip, the chip is electrically connected by metal wire with pin, and the pin back side outside is set
There is hypotenuse, the pin, Ji Dao and hypotenuse surface are provided with tin layers, the encapsulating of the pin, Ji Dao and chip periphery region
There is plastic packaging material.
There is a kind of plastic-sealed body lateral leads side to climb the encapsulating structure of tin performance, and it includes pin, is set on the pin
Chip is equipped with, metal column is provided with the chip, the metal column is electrically connected by solder with pin, the pin
Back side outside is provided with hypotenuse, and the pin and hypotenuse surface are provided with tin layers, and the pin and chip periphery region are encapsulated with
Plastic packaging material.
Compared with prior art, the advantage of the invention is that：
1st, there is a kind of plastic-sealed body lateral leads of the invention side to climb the encapsulating structure of tin performance, and it passes through cutting in the pin back of the body
Hypotenuse is formed on the outside of face, can be more prone to carry out climbing tin when PCB is welded, while it climbs tin state, and directly just energy is clear from outward appearance
Find out clearly；
2nd, there is a kind of plastic-sealed body lateral leads of the invention side to climb the encapsulating structure of tin performance, and it passes through cutting in the pin back of the body
Face outside forms hypotenuse, the air at pin can be made to be discharged along hypotenuse, it is to avoid bubble is remained in scolding tin so as to strengthen drawing
The combination of pin and PCB, to improve the welding performance and reliability of product.
Brief description of the drawings
Figure 1A is the existing schematic diagram that tin performance encapsulating structure is climbed with side wall.
Figure 1B is existing to climb the schematic diagram that tin performance encapsulating structure is combined with pcb board with side wall.
Fig. 2 is that there is a kind of plastic-sealed body lateral leads of the invention side to climb the schematic diagram of the encapsulating structure of tin performance.
Fig. 3 is that there is a kind of plastic-sealed body lateral leads of the invention side to climb the schematic perspective view of the encapsulating structure of tin performance.
There is a kind of Fig. 4 plastic-sealed body lateral leads of the present invention side to climb the encapsulating structure of tin performance and pcb board is combined shows
It is intended to.
Fig. 5 is that there is a kind of plastic-sealed body lateral leads of the invention side to climb showing for another embodiment of encapsulating structure of tin performance
It is intended to.
Fig. 6 is that there is a kind of plastic-sealed body lateral leads of the invention side to climb the vertical of another embodiment of encapsulating structure of tin performance
Body schematic diagram.
Wherein：
Pin 1
Base island 2
Bonding material or solder 3
Chip 4
Metal wire 5
Plastic packaging material 6
Hypotenuse 7
Tin layers 8
Metal column 9
Solder 10.
Specific embodiment
The present invention is described in further detail below in conjunction with accompanying drawing embodiment.
Embodiment 1：Chip formal dress
As shown in Figure 2 and Figure 3, there is a kind of plastic-sealed body lateral leads in the present embodiment side to climb the encapsulating structure of tin performance, it
Including pin 1 and base island 2, the pin 1 is arranged at around base island 2, and the front of base island 2 is set by bonding material or solder 3
Chip 4 is equipped with, the chip 4 is electrically connected by metal wire 5 with pin 1, the back side of the pin 1 outside is provided with tiltedly
Side 7, the pin 1, base island 2 and the surface of hypotenuse 7 are provided with tin layers 8, the pin 1, base island 2 and the outer peripheral areas of chip 4
It is encapsulated with plastic packaging material 6.
Referring to Fig. 4, there is a kind of plastic-sealed body lateral leads of the invention side to climb the encapsulating structure of tin performance, the pin back side
Outside forms hypotenuse, can be more prone to carry out climbing tin when PCB is welded, while the air at pin can be made to be arranged along hypotenuse
Go out, it is to avoid bubble is remained in scolding tin, to improve the welding performance and reliability of product.
Embodiment 2：Flip-chip
Referring to Fig. 5, Fig. 6, there is a kind of plastic-sealed body lateral leads in the present embodiment side to climb the encapsulating structure of tin performance, and it is wrapped
Pin 1 is included, chip 4 is provided with the pin 1, metal column 9 is provided with the chip 4, the metal column 9 passes through solder 10
It is electrically connected with pin 1, the back side of the pin 1 outside is provided with hypotenuse 7, and the pin 1 and the surface of hypotenuse 7 are provided with tin
Layer 8, the pin 1 and the outer peripheral areas of chip 4 are encapsulated with plastic packaging material 6.
Embodiment 2 is with the difference of embodiment 1：The chip 4 is turned on by metal column 9 with pin 1, and in product
Between without exposed Ji Dao.
In addition to the implementation, present invention additionally comprises having other embodiment, all use equivalents or equivalence replacement
The technical scheme that mode is formed, all should fall within the scope of the hereto appended claims.
Claims (2)
1. there is a kind of plastic-sealed body lateral leads side to climb the encapsulating structure of tin performance, it is characterised in that：It includes pin（1）With
Ji Dao（2）, the pin（1）It is arranged at Ji Dao（2）Around, the Ji Dao（2）Front passes through bonding material or solder（3）Set
There is chip（4）, the chip（4）By metal wire（5）With pin（1）It is electrically connected, the pin（1）Back side outside
It is provided with hypotenuse（7）, the pin（1）, Ji Dao（2）And hypotenuse（7）Surface is provided with tin layers（8）, the pin（1）, base
Island（2）And chip（4）Outer peripheral areas are encapsulated with plastic packaging material（6）.
2. there is a kind of plastic-sealed body lateral leads side to climb the encapsulating structure of tin performance, it is characterised in that：It includes pin（1）,
The pin（1）On be provided with chip（4）, the chip（4）On be provided with metal column（9）, the metal column（9）By solder
（10）With pin（1）It is electrically connected, the pin（1）Back side outside is provided with hypotenuse（7）, the pin（1）And hypotenuse
（7）Surface is provided with tin layers（8）, the pin（1）And chip（4）Outer peripheral areas are encapsulated with plastic packaging material（6）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710173105.0A CN106783792A (en) | 2017-03-22 | 2017-03-22 | There is a kind of plastic-sealed body lateral leads side to climb the encapsulating structure of tin performance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710173105.0A CN106783792A (en) | 2017-03-22 | 2017-03-22 | There is a kind of plastic-sealed body lateral leads side to climb the encapsulating structure of tin performance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106783792A true CN106783792A (en) | 2017-05-31 |
Family
ID=58966652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710173105.0A Pending CN106783792A (en) | 2017-03-22 | 2017-03-22 | There is a kind of plastic-sealed body lateral leads side to climb the encapsulating structure of tin performance |
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| CN (1) | CN106783792A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108109972A (en) * | 2017-12-29 | 2018-06-01 | 江苏长电科技股份有限公司 | There is semiconductor package and its manufacturing process that pin side wall climbs tin |
| CN108198804A (en) * | 2017-12-29 | 2018-06-22 | 江苏长电科技股份有限公司 | There is stack package structure and its manufacturing process that pin side wall climbs tin |
| CN108198790A (en) * | 2017-12-29 | 2018-06-22 | 江苏长电科技股份有限公司 | There is stack package structure and its manufacturing process that pin side wall climbs tin |
| CN108198797A (en) * | 2017-12-29 | 2018-06-22 | 江苏长电科技股份有限公司 | There is semiconductor package and its manufacturing process that pin side wall climbs tin |
| CN108198761A (en) * | 2017-12-29 | 2018-06-22 | 江苏长电科技股份有限公司 | There is semiconductor package and its manufacturing process that pin side wall climbs tin |
| CN108206170A (en) * | 2017-12-29 | 2018-06-26 | 江苏长电科技股份有限公司 | There is semiconductor package and its manufacturing process that pin side wall climbs tin |
| CN108257878A (en) * | 2018-01-11 | 2018-07-06 | 郑州云海信息技术有限公司 | A kind of method for enhancing QFN welded encapsulation effects and QFN encapsulation |
| CN108831871A (en) * | 2018-06-08 | 2018-11-16 | 郑州云海信息技术有限公司 | A kind of design method promoting QFN encapsulating parts welding quality |
| CN109243988A (en) * | 2018-09-14 | 2019-01-18 | 上海凯虹科技电子有限公司 | Packaging body and its packaging method |
| CN110176442A (en) * | 2019-05-30 | 2019-08-27 | 苏州浪潮智能科技有限公司 | A kind of chip pin of anti-bridge joint |
| CN110379791A (en) * | 2019-07-10 | 2019-10-25 | 苏州浪潮智能科技有限公司 | A kind of electronic component and its pin |
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| CN105206594A (en) * | 2015-10-22 | 2015-12-30 | 长电科技（滁州）有限公司 | Single-sided etching water-drop convex point type package structure and process method thereof |
| CN206595254U (en) * | 2017-03-22 | 2017-10-27 | 江苏长电科技股份有限公司 | There is a kind of plastic-sealed body lateral leads side to climb the encapsulating structure of tin performance |
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| US20040238923A1 (en) * | 2003-03-11 | 2004-12-02 | Siliconware Precision Industries Co., Ltd. | Surface-mount-enhanced lead frame and method for fabricating semiconductor package with the same |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108109972A (en) * | 2017-12-29 | 2018-06-01 | 江苏长电科技股份有限公司 | There is semiconductor package and its manufacturing process that pin side wall climbs tin |
| CN108198804A (en) * | 2017-12-29 | 2018-06-22 | 江苏长电科技股份有限公司 | There is stack package structure and its manufacturing process that pin side wall climbs tin |
| CN108198790A (en) * | 2017-12-29 | 2018-06-22 | 江苏长电科技股份有限公司 | There is stack package structure and its manufacturing process that pin side wall climbs tin |
| CN108198797A (en) * | 2017-12-29 | 2018-06-22 | 江苏长电科技股份有限公司 | There is semiconductor package and its manufacturing process that pin side wall climbs tin |
| CN108198761A (en) * | 2017-12-29 | 2018-06-22 | 江苏长电科技股份有限公司 | There is semiconductor package and its manufacturing process that pin side wall climbs tin |
| CN108206170A (en) * | 2017-12-29 | 2018-06-26 | 江苏长电科技股份有限公司 | There is semiconductor package and its manufacturing process that pin side wall climbs tin |
| CN108257878A (en) * | 2018-01-11 | 2018-07-06 | 郑州云海信息技术有限公司 | A kind of method for enhancing QFN welded encapsulation effects and QFN encapsulation |
| CN108831871A (en) * | 2018-06-08 | 2018-11-16 | 郑州云海信息技术有限公司 | A kind of design method promoting QFN encapsulating parts welding quality |
| CN109243988A (en) * | 2018-09-14 | 2019-01-18 | 上海凯虹科技电子有限公司 | Packaging body and its packaging method |
| CN110176442A (en) * | 2019-05-30 | 2019-08-27 | 苏州浪潮智能科技有限公司 | A kind of chip pin of anti-bridge joint |
| CN110379791A (en) * | 2019-07-10 | 2019-10-25 | 苏州浪潮智能科技有限公司 | A kind of electronic component and its pin |
| CN110379791B (en) * | 2019-07-10 | 2021-08-10 | 苏州浪潮智能科技有限公司 | Electronic part and pin thereof |
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