CN108198790B - Stack packaging structure with pin side wall tin climbing function and manufacturing process thereof - Google Patents

Stack packaging structure with pin side wall tin climbing function and manufacturing process thereof Download PDF

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Publication number
CN108198790B
CN108198790B CN201711467349.6A CN201711467349A CN108198790B CN 108198790 B CN108198790 B CN 108198790B CN 201711467349 A CN201711467349 A CN 201711467349A CN 108198790 B CN108198790 B CN 108198790B
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side wall
pin
chip
plastic packaging
base island
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CN108198790A (en
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刘恺
梁志忠
王亚琴
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4885Wire-like parts or pins
    • H01L21/4889Connection or disconnection of other leads to or from wire-like parts, e.g. wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3185Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
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    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

The invention relates to a stacked packaging structure with a pin side wall tin climbing function and a manufacturing process thereof, wherein the structure comprises a first base island and a first pin, the first pin comprises a plane part and a side wall part, the side wall part comprises a plurality of side wall surfaces, the plane part is in transitional connection with the side wall part through an arc part, a first chip is arranged on the front surface of the first base island, a first plastic packaging material is packaged on the peripheral areas of the first base island, the first pin and the first chip, a second base island and a second pin are arranged on the surface of the first plastic packaging material, a second chip is arranged on the front surface of the second base island, and a second plastic packaging material is packaged on the peripheral areas of the second base island, the second pin and the second chip. The soldering tin can climb to a higher height along the vertical side wall when the PCB is welded, so that the combination area of the soldering tin and the pins is increased, and meanwhile, air at the pins can be discharged along the convex arc, so that the welding performance and the reliability of a product are improved.

Description

Stack packaging structure with pin side wall tin climbing function and manufacturing process thereof
Technical Field
The invention relates to a stacked packaging structure with a pin side wall tin-climbing function and a manufacturing process thereof, belonging to the technical field of semiconductor packaging.
Background
With the development of modern technologies, semiconductor packages are widely used. The high-reliability radar antenna has higher and higher requirements on the reliability in a large number of applications such as radar, remote control and remote measurement, aerospace and the like. Failure due to poor semiconductor bonding has also become increasingly important as it is often fatal and irreversible. It is therefore important in the semiconductor industry to achieve a good solder joint reliability, and the tin layer on the solder side of the semiconductor can make the solder joint more robust, especially in automotive electronics.
As is well known, QFN (Quad Flat Package) and DFN (dual Flat Package) are leadless packages, in which a large-area exposed bonding pad is disposed at the center of the Quad Flat Package, and has a thermal conductive function, and a conductive bonding pad for electrical connection is disposed at the periphery of the large-area exposed bonding pad. Usually, the heat conducting bonding pad and the electric conducting bonding pad are attached to the circuit board together, but in the prior art, the side surface of the metal pin after the plastic package body is cut cannot climb up to the metal area of the side surface of the plastic package body due to a tin-free layer interface. The problem of cold soldering or cold soldering on the side surface of the metal pin is that the cold soldering or cold soldering cannot be clearly observed in appearance, and particularly, the method is applied to the first-level safety and the second-level safety in automotive electronics, so that tin climbing of the metal pin on the side surface of the plastic package body is particularly important.
In order to solve the problem, the outer ends of the back sides of the leads of the lead frame are cut by the conventional method in the industry (see fig. 1A) to form step-shaped steps, and then the cutting operation is performed (see fig. 1B), so that a packaging structure with steps on the side surfaces of the leads can be obtained (see fig. 1C), and the reliability of the packaging structure when the PCB is welded is improved.
However, when the exposed bonding pad and the conductive bonding pad at the bottom of the package structure with the step of the lead are soldered to the thermal bonding pad on the PCB, as shown in a portion a in fig. 1D, air is easily remained at the step of the lead and cannot be discharged, so that the solder bondability is poor. Especially, when the product works, the air remained in the step can generate air expansion due to the product heating, so that the tin layer between the PCB pad and the pins of the plastic package body is cracked, the electrical function of the integrated circuit is poor in contact, and the electrical function can be directly stopped working when the electrical function is serious.
In addition, in the manufacturing process of the package structure with the stepped pins, the outer ends of the back surfaces of the pins of the lead frame need to be cut firstly, and then the front surface of the packaged lead frame needs to be cut, so that the cutting efficiency is reduced, the consumption of a cutting tool is easy to accelerate, and the manufacturing cost is increased.
In addition, the outer end of the back of the lead frame is half-etched to form a water-drop-shaped groove (see fig. 1E), due to the etching characteristic, the groove formed by the method is an inward-concave arc, and the pin groove of the structure is also easy to have residual air which cannot be discharged (see fig. 1F), so that the soldering tin bonding property is poor.
In addition, the industry also has a package structure with L-shaped outer pins (see fig. 1G) or J-shaped outer pins (see fig. 1H), which utilizes a traditional lead frame packaged by the outer pins to carry out the operations of chip mounting, routing and packaging, the package structure is provided with the outer pins (see fig. 1I) with a certain length before the punching process, a forming die needs to be extended between the outer pins and a plastic package body during the punching process, and the outer pins are bent towards the side surface of the plastic package body to prepare the L-shaped outer pins or the C-shaped outer pins.
However, the package structure for forming the L-shaped outer lead or the C-shaped outer lead by the rib cutting molding also has the following defects when forming the L-shaped outer lead or the C-shaped outer lead: first, when the outer leads are formed, the outer leads are bent toward the side of the plastic package body, and the inner leads at the position a in fig. 1G and fig. 1H cause stress of the metal leads that are pulled out from the plastic package body downward and outward due to the influence of the rebounding acting force of the metal, and under the condition that the acting force is downward, a delamination phenomenon is easily generated between the upper surface of the inner leads at the position a and the lower surface of the plastic package material. In severe cases, open circuit can be formed between the bonding wire at the position A and the inner pin, so that the product can fail; secondly, when the L-shaped outer pin or C-shaped outer pin packaging structure is used for forming the outer pin, the outer pin is bent towards the side face of the plastic packaging body, namely, a forming die is stretched between the outer pin and the plastic packaging body and then bent and formed, and the outer pin can be in a relation of resilience when stressed due to the fact that the metal pin has a certain elastic coefficient, so that the outer pin forms a larger horn-shaped opening as shown in a position B in a figure 1J, and the outer pin is difficult to form a shape which is vertically attached to the side face of the plastic packaging body as shown in a figure 1G; finally, the L-shaped outer pin or C-shaped outer pin packaging structure has larger volume, and because the outer pin is bent to form the L-shaped outer pin or C-shaped outer pin packaging structure, compared with the traditional inner pin packaging structure, the L-shaped outer pin or C-shaped outer pin packaging structure has wider packaging body width, and is not beneficial to the development trend of miniaturization packaging bodies.
Disclosure of Invention
The invention aims to solve the technical problem of providing a stacked packaging structure with a pin side wall tin climbing function aiming at the prior art, wherein the pin is provided with an outward convex arc and a side wall which is connected with the outward convex arc and protrudes out of a plastic packaging material and has a certain height, soldering tin can climb to a higher height along a vertical side wall when a PCB is welded, and the side wall of the pin protrudes out of the plastic packaging material, so that the combination area of the soldering tin and the pin can be further increased, the tin climbing state can be clearly seen from the appearance, in addition, the outward convex arc structure of the pin can lead the air at the pin to be discharged along the outward convex arc when tin climbing is carried out, thereby avoiding that bubbles are remained in the soldering tin to influence the combination of the pin and the PCB, and improving the welding performance and the welding reliability of products;
the invention relates to a manufacturing process of a stacked packaging structure with a pin side wall tin-climbing function, which utilizes an etching process to form a groove with a certain depth on a carrier plate, and a metal layer is electroplated in the groove to form a pin with a vertical side wall which protrudes out of a plastic packaging material and has a certain height. In addition, the invention can realize the original array type plastic package body singleness only by removing the carrier plate without cutting, thereby saving the cutting cost.
The technical scheme adopted by the invention for solving the problems is as follows: a stacked packaging structure with a pin side wall tin climbing function comprises a first base island and a first pin, wherein the first pin comprises a plane part and a side wall part, the side wall part is located on the outer side of the plane part, the side wall part comprises a plurality of side wall surfaces, the plane part is in transitional connection with the side wall surfaces of the side wall part through arc parts, the convex surface of the arc parts faces towards the outer lower side, a first chip is arranged on the front surface of the first base island, the first chip is electrically connected with the first pin through a first metal welding wire, a first plastic packaging material is packaged in the first base island, the first pin and the peripheral area of the first chip, the height of the side wall part is flush with that of the first plastic packaging material, the side wall surfaces and the arc parts of the side wall part form a first wavy protruding part through being packaged with the first plastic packaging material, and the plane part, The inner surfaces of the arc-shaped part and the side wall part are coated in a first plastic packaging material, the outer surfaces of the plane part, the arc-shaped part and the side wall part are exposed outside the first plastic packaging material, a second base island and a second pin are arranged on the surface of the first plastic packaging material, the second pin is connected with the side wall part, a second chip is arranged on the front surface of the second base island, the second chip is electrically connected with the second pin through a second metal welding wire, the second plastic packaging material is coated on the peripheral area of the second base island, the second pin and the second chip, a second wavy protruding part is formed on the side surface of the second plastic packaging material, and the side wall parts of the first wavy protruding part and the second wavy protruding part are flush.
The first chip or the second chip adopts a flip-chip structure.
A manufacturing process of a stacked package structure with a pin side wall tin-climbing function comprises the following steps:
step one, taking a metal carrier plate;
step two, coating or printing photoresist materials capable of being exposed and developed on the front surface and the back surface of the metal carrier plate, and exposing, developing and removing part of the photoresist materials on the surface of the metal carrier plate by using exposure and development equipment to expose the area of the surface of the metal carrier plate, which is required to be etched;
chemically etching the area of the front surface of the metal carrier plate subjected to exposure and development to form a groove, wherein the bottom of the groove is a plane, the side wall of the groove is a wavy surface, the joint of the bottom and the side wall is etched to be arc-shaped, and the photoresist film on the surface of the metal carrier plate is removed after etching is finished;
step four, a metal circuit layer is electroplated inside the groove on the front surface of the metal carrier plate to form a first pin and a first base island, the first pin comprises a plane part and a side wall part, the side wall part comprises a plurality of side wall surfaces, the plane part is in transitional connection with the side wall surfaces of the side wall part through an arc part, the convex surface of the arc part faces outwards and downwards, and the height of the side wall part is lower than that of the groove top surface;
coating an adhesive substance or solder on the surface of the first base island, implanting a first chip on the adhesive substance or solder, and performing bonding metal wire bonding operation between the front surface of the first chip and the front surfaces of the first pins;
step six, plastic packaging the metal carrier plate subjected to the chip mounting and wire bonding operation in the step five by adopting a first plastic packaging material, wherein a plurality of side wall surfaces and arc-shaped parts of the side wall part after plastic packaging form a first wavy protruding part by coating the first plastic packaging material, and the surface of the first plastic packaging is flush with the side wall part of the first pin;
step seven, electroplating an upper metal circuit layer on the surface of the first plastic packaging material to form a second pin and a second base island;
step eight, coating a bonding substance or solder on the surface of the second base island, then implanting a second chip on the bonding substance or solder, and carrying out bonding metal wire welding operation between the front surface of the second chip and the front surface of the second pin;
step nine, plastically packaging the surface of the first plastic packaging material subjected to the chip mounting and routing operation in the step eight by adopting a second plastic packaging material, wherein the surface of the second plastic packaging material is flush with the top surface of the groove, and a second wavy protruding part is formed on the side surface of the second plastic packaging material;
and step ten, removing the metal carrier plate, exposing the outer surfaces of the first pin and the first base island, and independently opening the original array type plastic package body to obtain the stack packaging structure with the pin side surface tin climbing function.
The metal carrier plate is made of copper, iron or stainless steel.
The photoresist material is a photoresist film or a photoresist.
In the third step, copper chloride or ferric chloride is used as the etching liquid medicine.
And step three, softening by using chemical liquid medicine and removing the photoresist film by using a high-pressure water washing method.
In the fourth step or the seventh step, the metal circuit layer material is copper, aluminum or nickel.
In the fifth step or the eighth step, the metal bonding wire is made of gold, silver, copper or aluminum; the shape of the metal welding wire is a wire shape or a belt shape.
And in the sixth step or the ninth step, the encapsulation mode of the plastic package material adopts a mold glue filling mode, a spraying mode of spraying equipment or a glue brushing mode, and the plastic package material adopts epoxy resin with or without filler substances.
Compared with the prior art, the invention has the advantages that:
1. the invention relates to a stacked packaging structure with a pin side wall tin climbing function and a manufacturing process thereof, wherein a groove formed by etching a carrier plate is electroplated to directly form an arc shape with an outward protrusion and a pin which is connected with the arc shape and protrudes out of a plastic packaging material and has a side wall with a certain height, and soldering tin can climb to a higher height along a vertical side wall when a PCB is welded, so that the combination area of the soldering tin and the pin is increased, the tin climbing state can be clearly seen from the appearance, in addition, the outward protrusion arc structure of the pin can enable air at the pin to be discharged along the outward protrusion arc shape while tin climbing is carried out, so that bubbles remained in the soldering tin can be avoided to influence the combination of the pin and the PCB, and the welding performance and the welding reliability of a product can be improved;
2. according to the stacked packaging structure with the pin side wall tin-climbing function and the manufacturing process thereof, the vertical side wall of the pin is formed by electroplating instead of cutting ribs of the outer pin of the traditional frame, and the layering between the pin and a plastic packaging material cannot be caused in the forming process of the side wall, so that the reliability of a product is influenced;
3. according to the stacked packaging structure with the pin side wall tin climbing function and the manufacturing process thereof, the base island and the pins are circuit layers formed by electroplating, and the packaging volume is smaller compared with the stacked packaging structure with the tin climbing function formed by cutting a frame and the stacked packaging structure with the tin climbing side wall formed by cutting ribs;
4. according to the stacked packaging structure with the pin side wall tin-climbing function and the manufacturing process thereof, the original array type plastic packaging body can be singulated by only removing the carrier plate without cutting, so that the cutting cost can be saved.
Drawings
Fig. 1A-1B are schematic diagrams illustrating two-time cutting operations for manufacturing a package structure with a step in the lead.
Fig. 1C is a schematic diagram of a conventional package structure with a step on a lead.
Fig. 1D is a schematic diagram of a conventional package structure with a step on a lead and a PCB.
Fig. 1E is a schematic diagram of a conventional package structure with a pin having a drop-shaped groove.
Fig. 1F is a schematic diagram of a conventional package structure with a pin having a drop-shaped groove and a PCB board.
Fig. 1G is a schematic diagram of a conventional package structure with L-shaped outer leads.
Fig. 1H is a schematic diagram of a conventional package structure with C-shaped outer leads.
Fig. 1I is a schematic structural diagram of a conventional package structure having an L-shaped outer lead or a C-shaped outer lead before rib cutting and molding.
Fig. 1J is a schematic structural view of a conventional package structure with L-shaped outer leads after rib cutting and molding.
Fig. 2 is a schematic view of a stacked package structure with a lead sidewall solder-climbing function according to an embodiment 1 of the present invention.
Fig. 3 is a schematic perspective view of a stacked package structure with a lead sidewall solder-climbing function according to embodiment 1 of the present invention.
Fig. 4 is a schematic diagram of a stacked package structure with a lead sidewall solder-climbing function according to an embodiment 1 of the present invention combined with a PCB board.
Fig. 5-24 are flow charts illustrating a manufacturing process of a stacked package structure with a lead sidewall solder-climbing function according to embodiment 1 of the present invention, in which fig. 10 is a sectional view taken along a-a in fig. 9, fig. 11 is a sectional view taken along B-B in fig. 9, fig. 13 is a sectional view taken along C-C in fig. 12, fig. 16 is a sectional view taken along D-D in fig. 15, fig. 18 is a sectional view taken along E-E in fig. 17, fig. 21 is a sectional view taken along F-F in fig. 20, and fig. 22 is a sectional view taken along G-G in fig. 20.
Fig. 25 is a schematic view of a stacked package structure with a lead sidewall solder climbing function according to embodiment 2 of the present invention.
Fig. 26 is a schematic view of a stacked package structure with a lead sidewall solder climbing function according to embodiment 3 of the present invention.
Fig. 27 is a schematic view of a stacked package structure with a lead sidewall solder climbing function according to embodiment 4 of the present invention.
Wherein:
first base island 1
First pin 2
Flat part 2.1
Arc-shaped part 2.2
Side wall part 2.3
Adhesive substance or solder 3
First chip 4
First metal bonding wire 5
First plastic package material 6
First wave-like projections 7.1
Second wave-like projections 7.2
Second base island 8
Second lead 9
Second chip 10
Second metal bonding wire 11
And a second molding compound 12.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
Example 1:
as shown in fig. 2 and fig. 3, in the present embodiment, a stacked package structure with a pin sidewall solder-climbing function includes a first base island 1 and a first pin 2, where the first base island 1 and the first pin 2 are metal circuit layers formed by electroplating, the first pin 2 is disposed around the first base island 1, the first pin 2 includes a planar portion 2.1 and a sidewall portion 2.3, the sidewall portion 2.3 is located outside the planar portion 2.1, the sidewall portion 2.3 includes a plurality of sidewall surfaces, the planar portion 2.1 and the plurality of sidewall surfaces of the sidewall portion 2.3 are transitionally connected by an arc portion 2.2, a convex surface of the arc portion 2.2 faces to an outward lower side, a first chip 4 is disposed on a front surface of the first base island 1 through an adhesive substance or solder 3, the first chip 4 is electrically connected to the first pin 2 through a first metal bonding wire 5, and the first base island 1, the first base island 2, the first base island 1, the first pin 2, the second base 2, A first molding compound 6 is encapsulated in peripheral areas of the first lead 2 and the first chip 4, the height of the sidewall portion 2.3 is flush with the first molding compound 6, a plurality of sidewall surfaces and arc-shaped portions 2.2 of the sidewall portion 2.3 are coated with the first molding compound 6 to form a first wavy protrusion 7.1, inner surfaces of the planar portion 2.1, the arc-shaped portion 2.2 and the sidewall portion 2.3 are coated in the first molding compound 6, outer surfaces of the planar portion 2.1, the arc-shaped portion 2.2 and the sidewall portion 2.3 are exposed out of the first molding compound 6, a second base island 8 and a second lead 9 are arranged on the surface of the first molding compound 6, the second lead 9 is connected with the sidewall portion 2.3, a second chip 10 is arranged on the front surface of the second base island 8 through a bonding material or solder 3, the second chip 10 is electrically connected with the second lead 9 through a second metal 11, and the second base island 8, the second chip 8, The second lead 9 and the peripheral area of the second chip 10 are encapsulated with a second molding compound 12, the side surface of the second molding compound forms a second wavy protruding part 7.2, and the side wall parts of the first wavy protruding part 7.1 and the second wavy protruding part 7.2 are flush.
Fig. 4 is a schematic diagram of the combination of the stacked package structure with the pin side wall solder-climbing function and the PCB board of the present invention, the pin of the present invention has an outward convex arc shape and a side wall connected with the outward convex arc shape and having a certain height, the soldering tin can climb to a higher height along the vertical side wall when the PCB is welded, and the pin side wall is protruded from the plastic package material, so the combination area of the soldering tin and the pin can be further increased, the solder-climbing state can be clearly seen from the appearance, in addition, the outward convex arc structure of the pin can make the air at the pin discharge along the outward convex arc shape while the tin climbing, thereby avoiding the air bubble remained in the soldering tin from affecting the combination of the pin and the PCB, and improving the welding performance and the welding reliability of the product.
A manufacturing process of a stacked package structure with a pin side wall tin-climbing function comprises the following steps:
step one, referring to fig. 5, a metal carrier plate with a proper thickness is taken, the purpose of the plate is to provide support for circuit manufacturing and circuit layer structure, the material of the plate mainly comprises a metal material, and the material of the metal material can be a copper material, an iron material, a stainless steel material or other metal substances with a conductive function;
step two, referring to fig. 6, a photoresist material capable of being exposed and developed is coated or printed on the front surface and the back surface of the metal carrier to protect the subsequent metal layer etching process. The photoresist material may be a photoresist film or a photoresist. Referring to fig. 7, an exposure and development device is used to expose, develop and remove a portion of the photoresist material on the surface of the metal carrier to expose the area of the metal carrier where the pattern is to be etched;
and step three, referring to fig. 8, performing chemical etching on the area where the front surface of the metal carrier is exposed and developed, etching to form a groove, wherein the bottom of the groove is a plane, the side wall of the groove is a wavy surface, and the joint of the bottom and the side wall is etched into an arc shape due to the etching characteristic. The etching liquid can be copper chloride or ferric chloride or other chemical etching liquid. Referring to fig. 9 to 11, after the etching is completed, the photoresist film on the surface of the metal carrier is removed, and the photoresist film can be removed by softening with chemical solution and washing with high-pressure water;
step four, referring to fig. 12 and 13, a metal line layer is electroplated inside the groove on the front surface of the metal carrier to form a first pin and a first base island, the first pin includes a planar portion and a sidewall portion, the sidewall portion includes a plurality of sidewall surfaces, the planar portion and the sidewall surfaces of the sidewall portion are in transition connection through an arc portion, a convex surface of the arc portion faces outward and downward, the sidewall portion is lower in height than the top surface of the groove, and the metal line layer is usually made of copper, aluminum, nickel, or other conductive metal materials;
and step five, referring to fig. 14, coating adhesive substance or solder on the surface of the first base island, and then implanting the first chip on the adhesive substance or solder. Performing bonding metal wire operation between the front surface of the first chip and the front surfaces of the first pins, wherein the metal wire is made of gold, silver, copper, aluminum or alloy materials, and the shape of the metal wire can be filiform or strip-shaped;
step six, referring to fig. 15 and 16, plastically packaging the metal carrier plate subjected to the chip mounting and routing operation in the step five by using a first plastic packaging material, wherein a plurality of side wall surfaces and arc-shaped parts of the side wall part after plastic packaging form a wavy protruding part by coating the first plastic packaging material, and the surface of the first plastic packaging is flush with the side wall part of the first pin; the encapsulation mode of the first plastic package material can adopt a mold glue pouring mode, a spraying mode of spraying equipment or a glue brushing mode, and the first plastic package material can adopt epoxy resin with or without filler substances;
step seven, referring to fig. 17 and fig. 18, electroplating a metal circuit layer on the surface of the first plastic packaging material to form a second pin and a second base island, wherein the second pin is connected with the side wall part of the first pin, and the metal circuit layer is usually copper, aluminum, nickel or the like, and can also be other conductive metal substances;
step eight, referring to fig. 19, coating an adhesive substance or solder on the surface of the second base island, and then implanting a second chip on the adhesive substance or solder. Bonding metal wire bonding operation is carried out between the front surface of the second chip and the front surface of the second pin, the metal wire bonding is made of gold, silver, copper, aluminum or alloy, and the shape of the metal wire bonding can be filiform or strip-shaped;
step nine, referring to fig. 20 to fig. 22, plastically packaging the surface of the first plastic packaging material subjected to the chip mounting and routing operation in the step eight by using a second plastic packaging material, wherein the surface of the second plastic packaging material is flush with the top surface of the groove, and a second wavy protruding part is formed on the side surface of the second plastic packaging material; the encapsulation mode of the second plastic package material can adopt a mold glue pouring mode, a spraying mode of spraying equipment or a glue brushing mode, and the first plastic package material can adopt epoxy resin with or without filler substances;
step ten, referring to fig. 23 and fig. 24, the metal carrier is removed to expose the outer surfaces of the first pin and the first base island, and the original array type plastic package body can be independently opened, so as to obtain the stacked package structure with the pin side surface tin-climbing function.
Example 2:
referring to fig. 25, embodiment 2 differs from embodiment 1 in that: the first chip and the second chip adopt an inverted structure;
example 3:
referring to fig. 26, embodiment 3 differs from embodiment 1 in that: the second chip adopts a flip structure;
example 4:
referring to fig. 27, embodiment 4 differs from embodiment 1 in that: the first chip adopts a flip-chip structure.
In addition to the above embodiments, the present invention also includes other embodiments, and any technical solutions formed by equivalent transformation or equivalent replacement should fall within the scope of the claims of the present invention.

Claims (10)

1. The utility model provides a pile up packaging structure with pin lateral wall climbs tin function which characterized in that: the chip packaging structure comprises a first base island (1) and a first pin (2), wherein the first base island (1) and the first pin (2) are metal circuit layers formed by electroplating, the first pin (2) comprises a plane part (2.1) and a side wall part (2.3), the side wall part (2.3) is located on the outer side of the plane part (2.1), the side wall part (2.3) comprises a plurality of side wall surfaces, the plane part (2.1) is in transition connection with the side wall surfaces of the side wall part (2.3) through an arc part (2.2), the convex surface of the arc part (2.2) faces towards the outer lower side, a first chip (4) is arranged on the front surface of the first base island (1), the first chip (4) is electrically connected with the first pin (2) through a first metal welding wire (5), and a first plastic packaging material (6) is packaged in the peripheral areas of the first base island (1), the first pin (2) and the first chip (4), the height of the side wall part (2.3) is flush with that of the first plastic packaging material (6), a plurality of side wall surfaces and arc-shaped parts (2.2) of the side wall part (2.3) form first wavy protrusions (7.1) by coating the first plastic packaging material (6), the inner surfaces of the plane part (2.1), the arc-shaped parts (2.2) and the side wall parts (2.3) are coated in the first plastic packaging material (6), the outer surfaces of the plane part (2.1), the arc-shaped parts (2.2) and the side wall parts (2.3) are exposed out of the first plastic packaging material (6), a second base island (8) and a second pin (9) are arranged on the surface of the first plastic packaging material (6), the second pin (9) is connected with the side wall part (2.3), a second chip (10) is arranged on the front surface of the second base island (8), and the second chip (10) is electrically connected with the second pin (9) through a second metal island (11), the second base island (8), the second pin (9) and the peripheral area of the second chip (10) are encapsulated with a second molding compound (12), the side face of the second molding compound forms a second wavy protruding part (7.2), and the side wall parts of the first wavy protruding part (7.1) and the second wavy protruding part (7.2) are flush.
2. The package on package structure with solder climbing function on lead sidewall as claimed in claim 1, wherein: the first chip (4) or the second chip (10) adopts a flip-chip structure.
3. A manufacturing process of a stacked package structure with a pin side wall tin-climbing function is characterized by comprising the following steps:
step one, taking a metal carrier plate;
step two, coating or printing photoresist materials capable of being exposed and developed on the front surface and the back surface of the metal carrier plate, and exposing, developing and removing part of the photoresist materials on the surface of the metal carrier plate by using exposure and development equipment to expose the area of the surface of the metal carrier plate, which is required to be etched;
chemically etching the area of the front surface of the metal carrier plate subjected to exposure and development to form a groove, wherein the bottom of the groove is a plane, the side wall of the groove is a wavy surface, the joint of the bottom and the side wall is etched to be arc-shaped, and the photoresist film on the surface of the metal carrier plate is removed after etching is finished;
step four, a metal circuit layer is electroplated inside the groove on the front surface of the metal carrier plate to form a first pin and a first base island, the first pin comprises a plane part and a side wall part, the side wall part comprises a plurality of side wall surfaces, the plane part is in transitional connection with the side wall surfaces of the side wall part through an arc part, the convex surface of the arc part faces outwards and downwards, and the height of the side wall part is lower than that of the groove top surface;
coating an adhesive substance or solder on the surface of the first base island, implanting a first chip on the adhesive substance or solder, and performing bonding metal wire bonding operation between the front surface of the first chip and the front surfaces of the first pins;
step six, plastic packaging is carried out on the metal carrier plate which is subjected to the chip mounting and routing operation in the step five by adopting a first plastic packaging material, a plurality of side wall surfaces and arc-shaped parts of the side wall parts after plastic packaging form wavy protruding parts by coating the first plastic packaging material, and the surface of the first plastic packaging is flush with the side wall parts of the first pins;
step seven, electroplating an upper metal circuit layer on the surface of the first plastic packaging material to form a second pin and a second base island;
step eight, coating a bonding substance or solder on the surface of the second base island, then implanting a second chip on the bonding substance or solder, and carrying out bonding metal wire welding operation between the front surface of the second chip and the front surface of the second pin;
step nine, plastically packaging the surface of the first plastic packaging material subjected to the chip mounting and routing operation in the step eight by adopting a second plastic packaging material, wherein the surface of the second plastic packaging material is flush with the top surface of the groove, and a second wavy protruding part is formed on the side surface of the second plastic packaging material;
and step ten, removing the metal carrier plate, exposing the outer surfaces of the first pin and the first base island, and independently opening the original array type plastic package body to obtain the stack packaging structure with the pin side surface tin climbing function.
4. The manufacturing process of a stacked package structure with lead sidewall tin-climbing function as claimed in claim 3, wherein: the metal carrier plate is made of copper, iron or stainless steel.
5. The manufacturing process of a stacked package structure with lead sidewall tin-climbing function as claimed in claim 3, wherein: the photoresist material is a photoresist film.
6. The manufacturing process of a stacked package structure with lead sidewall tin-climbing function as claimed in claim 3, wherein: the liquid medicine adopted in the etching in the third step is copper chloride or ferric chloride.
7. The manufacturing process of a stacked package structure with lead sidewall tin-climbing function as claimed in claim 3, wherein: and step three, softening by using chemical liquid medicine and removing the photoresist film by using a high-pressure water washing method.
8. The manufacturing process of a stacked package structure with lead sidewall tin-climbing function as claimed in claim 3, wherein: in the fourth step or the seventh step, the metal circuit layer material is copper, aluminum or nickel.
9. The manufacturing process of a stacked package structure with lead sidewall tin-climbing function as claimed in claim 3, wherein: in the fifth step or the eighth step, the metal bonding wire is made of gold, silver, copper or aluminum; the shape of the metal welding wire is a wire shape or a belt shape.
10. The manufacturing process of a stacked package structure with lead sidewall tin-climbing function as claimed in claim 3, wherein: and in the sixth step or the ninth step, the encapsulation mode of the plastic package material adopts a mold glue filling mode, a spraying mode of spraying equipment or a glue brushing mode, and the plastic package material adopts epoxy resin with or without filler substances.
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