CN216288408U - Novel packaging structure of high-voltage power semiconductor chip - Google Patents
Novel packaging structure of high-voltage power semiconductor chip Download PDFInfo
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- CN216288408U CN216288408U CN202123015763.8U CN202123015763U CN216288408U CN 216288408 U CN216288408 U CN 216288408U CN 202123015763 U CN202123015763 U CN 202123015763U CN 216288408 U CN216288408 U CN 216288408U
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Abstract
The utility model discloses a novel packaging structure of a high-voltage power semiconductor chip, which comprises a semiconductor chip main body, a packaging layer, a first rubber pad, a vent and a placement groove, wherein a moving rod is arranged in a first spring, the lower end of the moving rod is connected with a first connecting plate, a threaded rod is arranged on the upper side of the semiconductor chip main body, a moving block is arranged in an upper cover plate, a second connecting plate is arranged at the lower end of the threaded rod, a second rubber pad is arranged at the lower end of the second connecting plate, a second spring is arranged on the second connecting plate, a radiating fin is arranged on the upper side of the semiconductor chip main body, and the placement groove is formed in the packaging layer. This novel packaging structure of high-voltage power semiconductor chip is provided with vent and fin, dispels the heat to the semiconductor chip main part through vent and fin to make its radiating efficiency higher, make it conveniently use, and can conveniently dismantle the fin through the threaded rod.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a novel packaging structure of a high-voltage power semiconductor chip.
Background
The semiconductor packaging refers to a process of processing a wafer passing a test according to a product model and a functional requirement to obtain an independent chip. The packaging process comprises the following steps: the wafer from the previous process of the wafer is cut into small chips through a scribing process, then the cut chips are pasted on the corresponding small islands of the substrate frame through glue, and then the bonding pads of the chips are connected to the corresponding pins of the substrate through superfine metal wires or conductive resin to form a required circuit; and then packaging and protecting the independent wafer by using a plastic shell, carrying out a series of operations after plastic packaging, carrying out finished product testing after packaging, generally carrying out the processes of inspection, testing, packaging and the like, and finally warehousing and shipping.
However, the existing high-voltage power semiconductor has the following defects in use, such as;
(1) the prior high-voltage power semiconductor is inconvenient to dissipate heat, generates larger heat because of larger power in use, and has poorer heat dissipation effect and poorer use effect.
(2) The existing high-voltage power semiconductor can not prevent the impact, and is easy to damage when being impacted in use, so that the existing high-voltage power semiconductor has defects in use.
We propose a novel package structure of a high voltage power semiconductor chip in order to solve the problems proposed in the above.
SUMMERY OF THE UTILITY MODEL
The present invention provides a novel package structure of a high voltage power semiconductor chip, so as to solve the problems that the conventional high voltage power semiconductor proposed by the above background art generates a large amount of heat due to a large power during use, and has a poor heat dissipation effect due to a poor heat dissipation effect, and the conventional high voltage power semiconductor is easily damaged due to impact during use, so that the conventional high voltage power semiconductor is insufficient during use.
In order to achieve the purpose, the utility model provides the following technical scheme: a novel packaging structure of a high-voltage power semiconductor chip comprises a semiconductor chip main body, a packaging layer, a first rubber pad, a vent and a placing groove, wherein the packaging layer is arranged on the outer side of the semiconductor chip main body, the first rubber pad is arranged on the outer side of the semiconductor chip main body, the vent is arranged on the packaging layer, an upper cover plate is arranged on the upper side of the semiconductor chip main body, a first spring is arranged inside the packaging layer, a moving rod is arranged inside the first spring, the lower end of the moving rod is connected with a first connecting plate, a threaded rod is arranged on the upper side of the semiconductor chip main body, a moving block is arranged inside the upper cover plate, a second connecting plate is arranged at the lower end of the threaded rod, a second rubber pad is arranged at the lower end of the second connecting plate, a second spring is arranged on the second connecting plate, and a radiating fin is arranged on the upper side of the semiconductor chip main body, the packaging layer is internally provided with a placing groove.
Preferably, the packaging layer is fixedly connected with the first rubber pad, the first rubber pad is in contact connection with the semiconductor chip body, and the width of the first rubber pad is the same as that of the semiconductor chip body.
Preferably, the upper cover plate is fixedly connected with the movable rod, the movable rod is movably connected with the packaging layer, and the movable rod forms a movable structure on the packaging layer.
Preferably, the movable rod is fixedly connected with the first connecting plate, the first connecting plate is movably connected with the packaging layer, and the first connecting plate forms a movable structure inside the packaging layer.
Preferably, the threaded rod is connected with the upper cover plate in a threaded manner, the threaded rod is movably connected with the moving block, and the moving block forms a moving structure in the upper cover plate.
Preferably, the heat dissipation sheet is detachably connected with the upper cover plate, and the heat dissipation sheet is in contact connection with the moving block.
Compared with the prior art, the utility model has the beneficial effects that: the novel packaging structure of the high-voltage power semiconductor chip;
(1) be provided with vent and fin, dispel the heat through vent and fin to semiconductor chip main part to make its radiating efficiency higher, make it conveniently use, and can conveniently dismantle the fin through the threaded rod.
(2) Be provided with first spring, through first spring, can extrude first spring when the upper cover plate receives the striking to can cushion it, and be provided with first rubber pad, thereby prevent to damage the semiconductor chip main part.
Drawings
FIG. 1 is a schematic front view of the present invention;
FIG. 2 is a schematic top view of the present invention;
FIG. 3 is a schematic side view of the present invention;
FIG. 4 is a schematic view of the structure at A in FIG. 1 according to the present invention.
In the figure: 1. a semiconductor chip body; 2. a packaging layer; 3. a first rubber pad; 4. a vent; 5. an upper cover plate; 6. a first spring; 7. a travel bar; 8. a first connecting plate; 9. a threaded rod; 10. a moving block; 11. a second connecting plate; 12. a second rubber pad; 13. a second spring; 14. a heat sink; 15. and (6) placing the groove.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-4, the present invention provides a technical solution: a novel packaging structure of a high-voltage power semiconductor chip comprises a semiconductor chip main body 1, a packaging layer 2, a first rubber pad 3, a vent 4, an upper cover plate 5, a first spring 6, a moving rod 7, a first connecting plate 8, a threaded rod 9, a moving block 10, a second connecting plate 11, a second rubber pad 12, a second spring 13, a radiating fin 14 and a placing groove 15, wherein the packaging layer 2 is arranged on the outer side of the semiconductor chip main body 1, the first rubber pad 3 is arranged on the outer side of the semiconductor chip main body 1, the vent 4 is arranged on the packaging layer 2, the upper cover plate 5 is arranged on the upper side of the semiconductor chip main body 1, the first spring 6 is arranged in the packaging layer 2, the moving rod 7 is arranged in the first spring 6, the first connecting plate 8 is connected to the lower end of the moving rod 7, the threaded rod 9 is arranged on the upper side of the semiconductor chip main body 1, the moving block 10 is arranged in the upper cover plate 5, the lower end of the threaded rod 9 is provided with a second connecting plate 11, the lower end of the second connecting plate 11 is provided with a second rubber pad 12, a second spring 13 is arranged on the second connecting plate 11, the upper side of the semiconductor chip main body 1 is provided with a radiating fin 14, and a placing groove 15 is formed in the packaging layer 2.
The connection mode of packaging layer 2 and first rubber pad 3 is fixed connection, and the connection mode of first rubber pad 3 and semiconductor chip main part 1 is the contact connection, and the width of first rubber pad 3 is the same with the width of semiconductor chip main part 1, the connection mode of packaging layer 2 and first rubber pad 3 makes packaging layer 2 and first rubber pad 3 be connected more firm, thereby prevent that it from taking place to drop, and first rubber pad 3 is the contact connection with the connection mode of semiconductor chip main part 1, thereby conveniently make first rubber pad 3 support semiconductor chip main part 1, make it conveniently use.
The upper cover plate 5 is fixedly connected with the moving rod 7, the moving rod 7 is movably connected with the packaging layer 2, the moving rod 7 forms a moving structure on the packaging layer 2, the upper cover plate 5 is connected with the moving rod 7 more stably through the moving rod 7, and the moving rod 7 can move inside the packaging layer 2 through the moving rod 7 conveniently through the packaging layer 2, so that the packaging layer 2 can be used conveniently.
The connected mode of carriage release lever 7 and first connecting plate 8 is fixed connection, and the connected mode of first connecting plate 8 and encapsulation layer 2 is swing joint, and first connecting plate 8 constitutes the removal structure in encapsulation layer 2 is inside, carriage release lever 7 makes the connection of carriage release lever 7 and first connecting plate 8 more firm with the connected mode of first connecting plate 8, thereby prevent that it from taking place to drop, and first connecting plate 8 and encapsulation layer 2's connected mode conveniently make first connecting plate 8 can remove in encapsulation layer 2 inside, make its convenient use.
The threaded rod 9 is connected with the upper cover plate 5 in a threaded mode, the threaded rod 9 is connected with the moving block 10 in a movable mode, the moving block 10 forms a moving structure inside the upper cover plate 5, and the threaded rod 9 is connected with the upper cover plate 5 in a threaded mode, so that the threaded rod 9 is conveniently detached.
The radiating fins 14 are detachably connected with the upper cover plate 5, the radiating fins 14 are in contact connection with the moving block 10, and the radiating fins 14 are movably connected with the upper cover plate 5, so that the radiating fins 14 are conveniently detached and used.
The working principle is as follows: when the novel packaging structure of the high-voltage power semiconductor chip is used, firstly, the integrity of the device is checked, then the device is transported to a corresponding working position and then used, then when the device needs to dissipate heat, the heat dissipation effect of the device is better through the heat dissipation fins 14 and the ventilation openings 4, and when the heat dissipation fins 14 need to be disassembled, the heat dissipation fins can be disassembled by rotating the threaded rods 9, then the heat dissipation fins 14 are pulled upwards, the disassembly can be carried out, when the impact is received, the upper cover plate 5 can be used for extruding the first springs 6 so as to buffer the first springs 6, so that the semiconductor chip body 1 is prevented from being damaged, and the whole process is finished, and the contents which are not described in detail in the specification, such as the first springs 6 and the like, are well known to those skilled in the art.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that various changes in the embodiments and/or modifications of the utility model can be made, and equivalents and modifications of some features of the utility model can be made without departing from the spirit and scope of the utility model.
Claims (6)
1. The utility model provides a novel packaging structure of high-voltage power semiconductor chip, includes semiconductor chip main part (1), encapsulated layer (2), first rubber pad (3), vent (4) and standing groove (15), its characterized in that: a packaging layer (2) is arranged on the outer side of the semiconductor chip main body (1), a first rubber pad (3) is arranged on the outer side of the semiconductor chip main body (1), a vent (4) is formed in the packaging layer (2), an upper cover plate (5) is arranged on the upper side of the semiconductor chip main body (1), a first spring (6) is arranged in the packaging layer (2), a moving rod (7) is arranged in the first spring (6), a first connecting plate (8) is connected to the lower end of the moving rod (7), a threaded rod (9) is arranged on the upper side of the semiconductor chip main body (1), a moving block (10) is arranged in the upper cover plate (5), a second connecting plate (11) is arranged at the lower end of the threaded rod (9), a second rubber pad (12) is arranged at the lower end of the second connecting plate (11), and a second spring (13) is arranged on the second connecting plate (11), the semiconductor chip comprises a semiconductor chip body (1), wherein a radiating fin (14) is arranged on the upper side of the semiconductor chip body (1), and a placing groove (15) is formed in the packaging layer (2).
2. The novel packaging structure of the high-voltage power semiconductor chip as claimed in claim 1, wherein: the packaging layer (2) is fixedly connected with the first rubber pad (3), the first rubber pad (3) is in contact connection with the semiconductor chip body (1), and the width of the first rubber pad (3) is the same as that of the semiconductor chip body (1).
3. The novel packaging structure of the high-voltage power semiconductor chip as claimed in claim 1, wherein: the upper cover plate (5) is fixedly connected with the moving rod (7), the moving rod (7) is movably connected with the packaging layer (2), and the moving rod (7) forms a moving structure on the packaging layer (2).
4. The novel packaging structure of the high-voltage power semiconductor chip as claimed in claim 1, wherein: the movable rod (7) is fixedly connected with the first connecting plate (8), the first connecting plate (8) is movably connected with the packaging layer (2), and the first connecting plate (8) forms a movable structure in the packaging layer (2).
5. The novel packaging structure of the high-voltage power semiconductor chip as claimed in claim 1, wherein: the threaded rod (9) is in threaded connection with the upper cover plate (5), the threaded rod (9) is movably connected with the moving block (10), and the moving block (10) forms a moving structure in the upper cover plate (5).
6. The novel packaging structure of the high-voltage power semiconductor chip as claimed in claim 1, wherein: the radiating fins (14) are detachably connected with the upper cover plate (5), and the radiating fins (14) are in contact connection with the moving block (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123015763.8U CN216288408U (en) | 2021-12-03 | 2021-12-03 | Novel packaging structure of high-voltage power semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123015763.8U CN216288408U (en) | 2021-12-03 | 2021-12-03 | Novel packaging structure of high-voltage power semiconductor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216288408U true CN216288408U (en) | 2022-04-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202123015763.8U Active CN216288408U (en) | 2021-12-03 | 2021-12-03 | Novel packaging structure of high-voltage power semiconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216288408U (en) |
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2021
- 2021-12-03 CN CN202123015763.8U patent/CN216288408U/en active Active
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