KR20140100683A - A light emitting device - Google Patents

A light emitting device Download PDF

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Publication number
KR20140100683A
KR20140100683A KR1020130013686A KR20130013686A KR20140100683A KR 20140100683 A KR20140100683 A KR 20140100683A KR 1020130013686 A KR1020130013686 A KR 1020130013686A KR 20130013686 A KR20130013686 A KR 20130013686A KR 20140100683 A KR20140100683 A KR 20140100683A
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South Korea
Prior art keywords
layer
light
electrode
emitting layer
light emitting
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KR1020130013686A
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Korean (ko)
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KR102047440B1 (en
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박경욱
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엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

According to an embodiment of the present invention, a light emitting device includes a first semiconductor layer; an active layer; a light emitting structure including a second semiconductor layer; a first electrode arranged on the first semiconductor layer; an ohmic area arranged under the second semiconductor layer; a side transmitting layer which is arranged under the ohmic area and transmits light; and a reflection layer that includes a lower side reflection part, arranged under the side transmitting layer, and an upper reflection part, which is located inside the side transmitting layer and connects the ohmic area and the lower reflection part. The upper reflection part is not overlapped with the first electrode in the vertical direction.

Description

A LIGHT EMITTING DEVICE

An embodiment relates to a light emitting element.

2. Description of the Related Art Generally, a light emitting diode (LED) converts an electric signal into an infrared ray, a visible ray, or a light by using a compound semiconductor characteristic of recombination of electrons and holes. Semiconductor device.

In the LED, the frequency (or wavelength) of the emitted light is a function of the band gap of the semiconductor material. When a semiconductor material having a small band gap is used, photons of low energy and long wavelength are generated, When a semiconductor material having a bandgap is used, short wavelength photons are generated. Therefore, the semiconductor material of the device is selected depending on the type of light to be emitted.

It is important to increase light extraction efficiency to realize LED high brightness. In order to increase the light extraction efficiency, a flip-chip structure, surface texturing, patterned sapphire substrate (PSS), photonic crystal technology, and anti-reflection layer structure is being studied.

In general, a light emitting device includes a light emitting structure that is a semiconductor layer that generates light, a first electrode and a second electrode to which power is supplied, a current blocking layer for current dispersion, an ohmic layer that is in ohmic contact with the light emitting structure, And an ITO (Indium Tin Oxide) layer for improving light extraction efficiency.

The embodiment provides a light emitting device capable of improving the light emitting efficiency and the light directing angle.

A light emitting device according to an embodiment includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; A first electrode disposed on the first semiconductor layer; An ohmic region disposed under the second semiconductor layer; A side emitting layer disposed below the ohmic region and transmitting light; And a reflective layer disposed below the side-emitting layer and including an upper reflector positioned within the side-emitting layer and connecting the ohmic region and the lower reflector, wherein the upper reflector is perpendicular to the first electrode, Direction.

 The first electrode includes a pad portion; An external electrode extending from the pad portion and disposed on an upper surface edge of the first semiconductor layer; And an inner electrode positioned inside the outer electrode and connected to the outer electrode, wherein the upper reflector can be aligned between the outer electrode and the inner electrode.

The upper reflector may be a plurality of upper reflectors, and the plurality of upper reflectors may be spaced apart from each other.

The side-emitting layer may be made of a light-transmitting nonconductive insulating material.

Wherein the side-emitting layer is disposed under the ohmic region and includes a first side-emitting layer made of a light-transmitting non-conductive insulating material; And a second side emitting layer disposed below the first side emitting layer and made of a light transmitting conductive material.

The side-emitting layer may include a plurality of light-transmitting insulating layers having different refractive indices.

The diameters of the plurality of upper reflectors may be different from each other based on a distance from the pad. The diameter of the plurality of upper reflectors may be reduced as the pad is positioned adjacent to the pad.

The side-emitting layer may include at least one of silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), and aluminum oxide (Al 2 O 3 ). The thickness of the side-emitting layer may be 10 탆 to 100 탆. The light emitting device may further include a current blocking layer disposed between the second semiconductor layer and the side emitting layer and overlapping the first electrode in the vertical direction.

The embodiment can improve the luminous efficiency and the light directing angle.

1 is a plan view of a light emitting device according to an embodiment.
2 is a sectional view of the light emitting device shown in Fig. 1 in the AB direction.
3 shows a light emitting device according to another embodiment.
4 shows a light emitting device according to another embodiment.
5 is a plan view of a light emitting device according to another embodiment.
6 is a cross-sectional view of the light emitting device shown in Fig. 5 in the CD direction.
7 shows a light emitting device package according to an embodiment.
8 is an exploded perspective view of a lighting device including a light emitting device package according to an embodiment.
9 shows a display device including a light emitting device package according to an embodiment.
10 shows a head lamp including a light emitting device package according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings. Hereinafter, a light emitting device according to an embodiment will be described with reference to the accompanying drawings.

FIG. 1 is a plan view of a light emitting device 100 according to an embodiment, and FIG. 2 is a sectional view of the light emitting device 100 in the AB direction shown in FIG.

1 and 2, the light emitting device 100 includes a light emitting structure 150, a first electrode 170, a passivation layer 140, a current blocking layer 135, a passivation layer 140, 160, an ohmic region 130, a side-emitting layer 125, and a second electrode 101.

The light emitting structure 150 generates light having a predetermined wavelength. The side surface of the light emitting structure 150 may be an inclined surface in an isolation etching process that is divided into unit chips.

The light emitting structure 150 may include a first semiconductor layer 156, an active layer 154 disposed under the first semiconductor layer 156, and a second semiconductor layer 152 disposed under the active layer 154 have.

The first semiconductor layer 156 may be formed of compound semiconductors such as Group 3-Group 5, Group 2-Group 6, and the like, and the first conductivity type dopant may be doped.

For example, the first semiconductor layer 156 may be a semiconductor having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1) , Ge, Sn, etc.) can be doped.

The active layer 154 can generate light by energy generated in the recombination process of electrons and holes provided from the first semiconductor layer 156 and the second semiconductor layer 152 .

The active layer 154 may be disposed between the first semiconductor layer 156 and the second semiconductor layer 152 and may be implemented with a semiconductor compound such as Group 3-Group 5, Group 2-6, have.

The active layer 154 may be a single well structure, a multi-well structure, a quantum-wire structure, a quantum dot structure, or the like.

In the case where the active layer 154 is a quantum well structure, the active layer 154 is formed of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + And a barrier layer having a composition formula of In a Al b Ga 1 -a b N (0? A? 1, 0? B ? 1, 0? A + b? 1) Lt; / RTI > The well layer may be a material having a band gap lower than the energy band gap of the barrier layer.

The second semiconductor layer 152 may be formed of a compound semiconductor such as a group III-V element, a group II-VI element, or the like, and the second conductivity type dopant may be doped.

For example, the second semiconductor layer 136 may be a semiconductor having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1) , Zn, Ca, Sr, Ba) may be doped.

The first electrode 170 may be disposed on the first semiconductor layer 156. On the upper surface of the first semiconductor layer 156, a roughness 180 may be formed to increase the light extraction efficiency. Roughness (not shown) may also be formed on the top surface of the first electrode 170 to increase the light extraction efficiency.

The first electrode 170 may have a predetermined pattern shape.

For example, the first electrode 170 may include pad portions 102a and 102b and branch electrodes 172a, 172b, 172c, 172d, and 172e. The pad portions 102a and 102b may be portions of the first electrode 170 to which a wire is bonded for power supply.

The branched electrodes 172a, 172b, 172c, 172d and 172e may serve as current spreading for uniformly diffusing a current supplied from the pad portions 102a and 102b to the first semiconductor layer 156. [

The branched electrodes 172a, 172b, 172c, 172d and 172e extend from the pad portions 102a and 102b and are connected to external electrodes 172a, 172b, 172c, and 172d disposed on the upper surface of the first semiconductor layer 156, And an internal electrode 172e disposed on the upper surface of the first semiconductor layer 156 located inside the external electrodes 172a, 172b, 172c, and 172d.

The pad portions 102a and 102b are provided at a position where at least one of the external electrodes 172a, 172b, 172c and 172d meet or the external electrodes 172a, 172b, 172c and 172d and the internal electrode 172e meet with each other .

The pad portions 102a and 102b may include a first pad portion 102a and a second pad portion 102b. The first pad portion 102a may be provided at a portion where the first external electrode 172a and the second external electrode 172b are in contact with each other and the second pad portion 102b may be provided at a portion where the second external electrode 172b and the third And may be provided at a portion where the external electrode 172c contacts.

The external electrodes 172a, 172b, 172c and 172d and the internal electrode 172e shown in FIG. 1 are merely examples, and the first electrode 170 is not limited to the structure shown in FIG. 1, Can be implemented.

The protective layer 140 may be disposed on the edge region of the lower surface of the second semiconductor layer 152. The protective layer 140 can prevent the interface between the light emitting structure 150 and the side-emitting layer 125 from being peeled off, thereby lowering the reliability of the light emitting device 100. Also, at least a part of the protective layer 140 may overlap with the external electrodes 172a, 172b, 172c, and 172d in the vertical direction.

The protective layer 140 is an electrically insulating material, e.g., ZnO, SiO 2, Si 3 N 4, TiOx (x is a positive real number), or Al 2 O 3 Or the like.

The current blocking layer 135 is disposed under the second semiconductor layer 152. Specifically, the current blocking layer 135 may be disposed on one region of the lower surface of the second semiconductor layer 152.

The current blocking layer 135 may be disposed between the second semiconductor layer 152 and the side-emitting layer 125.

The current blocking layer 135 may be disposed corresponding to the first electrode 170 and may overlap at least part of the first electrode 170 in the vertical direction. For example, the current blocking layer 135 may have a pattern shape corresponding to the first electrode 170 pattern. The vertical direction may be a direction from the second semiconductor layer 152 to the first semiconductor layer 156.

 Since the current blocking layer 135 overlaps at least part of the first electrode 170 in the vertical direction, the current blocking layer 135 is formed in a specific region of the light emitting structure 150 located between the first electrode 170 and the second electrode 101 The phenomenon of current concentration can be mitigated and the luminous efficiency of the luminous means 100 can be improved.

The current blocking layer 135 may be a material that forms a Schottky contact with the second semiconductor layer 152, or an electrically insulating material. For example, the current blocking layer 135 is ZnO, SiO 2, SiON, Si 3 N 4 , Al 2 O 3 , TiO 2 , and AiN.

The ohmic region 130 is disposed below the second semiconductor layer 152 and may be in ohmic contact with the lower surface of the second semiconductor layer 242 except for the region where the current blocking layer 135 is disposed. The ohmic region 130 may serve to supply power from the second electrode 101 to the light emitting structure 150 smoothly.

The ohmic region 130 shown in FIG. 2 is shown contacting only the side surface of the current blocking layer 135, while in another embodiment, the material forming the ohmic region 130 is formed on the side surface of the current blocking layer 135, As shown in FIG.

The ohmic region 130 may include at least one of In, Zn, Sn, Ni, Pt, and Ag. The ohmic region 130 may be formed by selectively using a light-transmitting conductive layer and a metal. For example, the ohmic region 130 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO) tin oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrO x , RuO x , RuO x / ITO, Ni, Ag, Ni / IrO x / IrO x / Au / ITO, and may be a single layer or a multi-layer structure.

The passivation layer 160 may be disposed on the side of the light emitting structure 150 to electrically protect the light emitting structure 150. The passivation layer 160 may be disposed on the upper surface of the first semiconductor layer 156 or on the upper surface of the passivation layer 140. The passivation layer 160 is an insulating material, e.g., SiO 2, SiO x, SiO x N y, Si 3 N 4 , or Al 2 O 3 .

The side emitting layer 125 is disposed under the ohmic region 130, the current blocking layer 135 and the protective layer 140 and is formed of a material such as light emitted from the light emitting element 150 and light reflected from the reflective layer 120 Light can be emitted in the lateral direction and the light directing angle of the light emitting element 100 can be improved.

Side emitting layer 125 may comprise at least one of a light transmitting nonconductive insulating material such as silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), or aluminum oxide (Al 2 O 3 ).

The thickness of the side-emitting layer 125 may be 10 탆 to 100 탆 in consideration of the lateral emission and the light directing angle. When the thickness of the side-emitting layer 125 is less than 10 탆, the light emitted from the light-emitting element 150 and the light reflected by the reflective layer 120 are hardly radiated in the lateral direction, Because there is little.

When the thickness of the side-emitting layer 125 is more than 100 mu m, it is preferable that the thickness of the side-emitting layer 125 is less than 100 mu m in the case of a laser lift-off (LLO) process in which a growth substrate (not shown) The side-emitting layer 125 may be broken.

The reflective layer 120 may be disposed under the side-emitting layer 125 and a portion of the reflective layer 120 may contact the ohmic region 130 through the side-emitting layer 125.

The reflective layer 120 is disposed within the lower reflective layer 121 and the side-emitting layer 125 positioned below the lower surface of the side-emitting layer 125 and includes at least one upper And reflectors 122-1 through 122-n (natural number n > = 1).

At least one of the upper reflectors 122-1 to 122-n (natural number n > = 1) does not overlap with the first electrode 179 in the vertical direction. Also, at least one of the upper reflectors 122-1 to 122-n (natural number n > = 1) does not overlap the current blocking layer 135 in the vertical direction.

The sides of at least one upper reflector 122-1 through 122-n, n > = 1 are enclosed by a side emitter layer 125, and at least one upper reflector 122-1 through 122- 1) can be brought into ohmic contact with the ohmic region 130. In this case,

For example, the reflective layer 120 may extend from the lower reflective portion 121 to the ohmic region 130, and may include a plurality of upper reflective portions 122-1 to 122-4 that are in contact with the ohmic region 130 through the side- 122-n, e.g., n = 6). The upper reflectors 122-1 to 122-n, e.g., n = 6, may be disposed apart from each other in the side-emitting layer 125. [

The upper reflectors 122-1 to 122-n, for example, n = 6 are formed in a portion S1 of the light emitting structure 150 located between the outer electrodes 172a, 172b, 172c and 172d and the inner electrode 172e. ). ≪ / RTI >

The reflective layer 120 may be formed of a metal or an alloy including at least one of a reflective material such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf.

Or the reflective layer 120 may be formed using a reflective material and a light-transmitting conductive material. For example, the reflective layer 120 may be formed of IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag /

The support layer 105 is disposed below the reflective layer 120 and can support the light emitting structure 150. The support layer 105 may be formed of a metal or a semiconductor material. The support layer 105 may also be formed of a material having high electrical conductivity and high thermal conductivity.

For example, the support layer 105 may be formed of a metal containing at least one of copper (Cu), a copper alloy, gold (Au), nickel (Ni), molybdenum (Mo), and copper-tungsten Material, or a semiconductor including at least one of Si, Ge, GaAs, ZnO, and SiC.

A barrier layer 115 is disposed between the reflective layer 120 and the support layer 105 and the metal ions of the bonding layer 110 and the support layer 105 pass through the reflective layer 120 and the ohmic region 130 And diffuse into the light emitting structure 150 can be prevented. For example, the barrier layer 115 may include at least one of Ni, Pt, Ti, W, V, Fe, and Mo, and may be a single layer or a multilayer.

The bonding layer 110 may be disposed between the supporting layer 105 and the barrier layer 115 and may serve as a bonding layer for bonding the supporting layer 105 to the barrier layer 115.

The bonding layer 110 may include at least one of a metal material such as In, Sn, Ag, Nb, Pd, Ni, Au and Cu. Since the bonding layer 110 is formed to bond the support layer 105 by a bonding method, when the support layer 105 is formed by plating or vapor deposition, the bonding layer 110 may be omitted.

The second electrode 105 provides power to the light emitting structure 150 together with the first electrode 170. Power can be supplied to the reflective layer 120 by the second electrode 105 and can be supplied to the light emitting structure 150 through the upper reflectors 122-1 to 122-n, n > = 1 .

Since the upper reflectors 122-1 to 122-n (natural number of n > = 1) do not overlap with the first electrode 170 in the vertical direction, the embodiment can improve the current dispersion effect, Can be improved.

The light emitted from the light emitting structure 150 and the light reflected from the reflective layer 120 are emitted in the lateral direction by the side emitting layer 125, Side light emission efficiency can be improved.

3 shows a light emitting device 200 according to another embodiment. The same reference numerals as in Fig. 2 denote the same components, and the same components are simply described or omitted in order to avoid redundancy.

Referring to FIG. 3, the side-emitting layer 210 may include a first side-emitting layer 214 and a second side-emitting layer 212.

The first side emitting layer 212 may be disposed under the ohmic region 130, the protective layer 130, and the current blocking layer 135, and may be a light transmitting nonconductive insulating material.

For example, the first side-emitting layer 212 may be made of silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), or aluminum oxide (Al 2 O 3 ).

The second side emitting layer 214 may be disposed under the first side emitting layer 214 and may be a light transmitting conductive material. For example, the second side emitting layer 214 may be a conductive oxidizing material. The second side emitting layer 214 may be separated and separated from the ohmic region 130 by the first side emitting layer 212.

Specifically, the second side emitting layer 214 may include at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO and may include at least one of indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), and gallium zinc oxide (GZO).

The lower reflector 121 may be positioned below the second side emitting layer 214 and the upper reflectors 122-1 to 122-n, n > = 1 may be positioned below the second side emitting layer 214 and the first Emitting layer 212 to connect the ohmic region 130 and the lower reflective portion 121 with each other.

In Embodiment (200), a conductive oxide material may be used as a constituent material of the side-emitting layer 210.

4 shows a light emitting device 300 according to another embodiment. The same reference numerals as in Fig. 2 denote the same components, and the same components are simply described or omitted in order to avoid redundancy.

Referring to FIG. 4, the side-emitting layer 410 may include a plurality of transparent insulating layers 410-1 to 410-m having different refractive indexes, and a natural number of m> 1.

The plurality of light-transmitting insulating layers 410-1 to 410-m and the natural number of m> 1 may be any one of silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), and aluminum oxide (Al 2 O 3 ) And the refractive index may be different. For example, the refractive indices of the light-transmitting insulating layers 410-1 to 410-m and the natural number of m> 1 can be made different from each other by adjusting the thickness and the density.

The lower reflector 121 may be positioned below the light transmissive insulating layer 410-m and the upper reflectors 122-1 to 122-n, n? 1 may be located below the plurality of light transparent insulating layers 410-1 to 410- 410-m and m > 1) to connect the ohmic region 130 and the lower reflecting portion 121 with each other.

The light emitted from the light emitting structure 150 and the light reflected by the reflective layer 120 are incident on the side of the light emitting structure 150. Therefore, Can be refracted within the emitting layer 410, which can improve the light extraction efficiency.

FIG. 5 shows a plan view of a light emitting device 400 according to another embodiment, and FIG. 6 shows a sectional view in the CD direction of the light emitting device 400 shown in FIG. The same reference numerals as in Fig. 2 denote the same components, and the same components are simply described or omitted in order to avoid redundancy.

5 and 6, the reflective layer 310 is formed by passing through the lower reflective portion 121 located below the lower surface of the side-emitting layer 125 and the side-emitting layer 125, And may include a plurality of upper reflectors 310-1 to 310-n, n> 1, which are connected to each other. The plurality of upper reflectors 310-1 to 310-n, natural numbers of n> 1, may be spaced apart from each other.

Sectional areas or diameters (e.g., d1, d2, and d3) of the plurality of upper reflectors 310-1 to 310-n, n> 1 are determined based on the distance from the pad portions 102a and 102b can be different.

For example, the cross-sectional area or diameter (e.g., d1, d2, d3) of the upper reflectors 310-1 to 310-n, n> 1 may decrease as the pad portions 102a and 102b are positioned . In other words, the cross-sectional area or diameter (for example, d1, d2, d3) of the upper reflectors 310-1 to 310-n, natural number of n> 1 can be increased as they are located farther from the pad portions 102a and 102b .

By making the sectional areas or the diameters of the upper reflectors 310-1 to 310-n (natural number n> 1) different depending on the distance from the pad portions 102a and 102b, the embodiment can disperse the current, The luminous efficiency can be improved.

7 shows a light emitting device package 600 according to an embodiment.

7, the light emitting device package 600 includes a package body 610, lead frames 612 and 614, a light emitting device 620, a reflector 625, a wire 630, and a resin layer 640 do.

A cavity may be formed on the upper surface of the package body 610. The side wall of the cavity may be formed obliquely. The package body 610 may be formed of a substrate having good insulating or thermal conductivity, such as a silicon-based wafer level package, a silicon substrate, silicon carbide (SiC), aluminum nitride (AlN) Or may be a structure in which a plurality of substrates are stacked. The embodiment is not limited to the material, structure and shape of the package body 610.

The lead frames 612 and 614 are disposed on the package body 610 so as to be electrically separated from each other in consideration of heat discharge or mounting of the light emitting device. The light emitting element 620 is electrically connected to the lead frames 612 and 614. The light emitting device 620 may be any one of the embodiments 100, 200, 300, and 400.

The reflection plate 625 is formed on the cavity side wall of the package body 610 so as to direct the light emitted from the light emitting element in a predetermined direction. The reflector 625 is made of a light reflecting material, for example, a metal coating or a metal flake.

The resin layer 640 surrounds the light emitting element 620 located in the cavity of the package body 610 to protect the light emitting element 620 from the external environment. The resin layer 640 may be made of a colorless transparent polymer resin material such as epoxy or silicone. The resin layer 640 may include a phosphor to change the wavelength of the light emitted from the light emitting device 620.

8 is an exploded perspective view of a lighting device including a light emitting device package according to an embodiment. 8, the illumination device includes a light source 750 that emits light, a heat dissipation unit 740 that emits heat from the light source, a housing 700 that houses the light source 750 and the heat dissipation unit 740, And a holder 760 coupling the light source 750 and the heat dissipating unit 740 to the housing 700.

The housing 700 may include a socket coupling portion 710 coupled to an electric socket (not shown), and a body portion 730 connected to the socket coupling portion 710 and having a light source 750 embedded therein. One air flow hole 720 may be formed through the body portion 730.

A plurality of air flow holes 720 may be provided on the body portion 730 of the housing 700 and one or more air flow holes 720 may be provided. The air flow port 720 may be disposed radially or in various forms on the body portion 730.

The light source 750 may include a plurality of light emitting device packages 752 mounted on the substrate 754. [ The substrate 754 may have a shape that can be inserted into the opening of the housing 700 and may be made of a material having a high thermal conductivity to transmit heat to the heat dissipating unit 740 as described later. For example, the light emitting device package 752 may be the embodiment 600 shown in FIG.

A holder 760 is provided below the light source 750, and the holder 760 may include a frame and other air flow holes. Although not shown, an optical member may be provided under the light source 750 to diffuse, scatter, or converge light projected from the light emitting device package 752 of the light source 750.

9 shows a display device including a light emitting device package according to an embodiment. 9, the display device 800 includes a bottom cover 810, a reflection plate 820 disposed on the bottom cover 810, light emitting modules 830 and 835 for emitting light, a reflection plate 820 A light guide plate 840 disposed in front of the light emitting module 830 and guiding the light emitted from the light emitting modules 830 and 835 to the front of the display device and prism sheets 850 and 860 disposed in front of the light guide plate 840, An image signal output circuit 872 connected to the display panel 870 and supplying an image signal to the display panel 870 and a display panel 870 disposed in front of the display panel 870, And a color filter 880 disposed therein. Here, the bottom cover 810, the reflection plate 820, the light emitting modules 830 and 835, the light guide plate 840, and the optical sheet may form a backlight unit.

The light emitting module may include light emitting device packages 835 mounted on the substrate 830. Here, the substrate 830 may be a PCB or the like, and the light emitting device package 835 may be the embodiment 600 shown in FIG.

The bottom cover 810 can house components within the display device 800. [ Also, the reflection plate 820 may be formed as a separate component as shown in the drawing, or may be provided on the rear surface of the light guide plate 840 or on the front surface of the bottom cover 810 in a state of being coated with a highly reflective material .

Here, the reflection plate 820 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and polyethylene terephthalate (PET) can be used.

The light guide plate 830 may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), or polyethylene (PE).

The first prism sheet 850 may be formed of a light-transmissive and elastic polymeric material on one side of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, as shown in the drawings, the plurality of patterns may be provided with a floor and a valley repeatedly as stripes.

In the second prism sheet 860, the direction of the floor and the valley on one side of the supporting film may be perpendicular to the direction of the floor and the valley on one side of the supporting film in the first prism sheet 850. This is for evenly distributing the light transmitted from the light emitting module and the reflective sheet to the front surface of the display panel 1870.

Although not shown, a diffusion sheet may be disposed between the light guide plate 840 and the first prism sheet 850. The diffusion sheet may be made of polyester and polycarbonate-based materials, and the light incidence angle can be maximized by refracting and scattering light incident from the backlight unit. The diffusion sheet includes a support layer including a light diffusing agent, a first layer formed on the light exit surface (first prism sheet direction) and a light incidence surface (in the direction of the reflection sheet) . ≪ / RTI >

In an embodiment, the diffusion sheet, the first prism sheet 850, and the second prism sheet 860 make up an optical sheet, which may be made of other combinations, for example a microlens array, A combination of one prism sheet and a microlens array, or the like.

The display panel 870 may include a liquid crystal display (LCD) panel, and may include other types of display devices that require a light source in addition to the liquid crystal display panel 860.

10 shows a head lamp 900 including the light emitting device package according to the embodiment. 10, the head lamp 900 includes a light emitting module 901, a reflector 902, a shade 903, and a lens 904.

The light emitting module 901 may include a light emitting device package 600 according to an embodiment disposed on a substrate (not shown).

The reflector 902 reflects the light 911 emitted from the light emitting module 901 in a predetermined direction, for example, toward the front 912.

The shade 903 is disposed between the reflector 902 and the lens 904 and reflects off or reflects a part of the light reflected by the reflector 902 toward the lens 904 to form a light distribution pattern desired by the designer. The one side portion 903-1 and the other side portion 903-2 of the shade 903 may have different heights from each other.

The light emitted from the light emitting module 901 can be reflected by the reflector 902 and the shade 903 and then transmitted through the lens 904 and directed toward the front of the vehicle body. The lens 904 can refract the light reflected by the reflector 902 forward.

 The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

101: second electrode 105: support layer
110: bonding layer 115: barrier layer
120: reflective layer 125: side emitting layer
130: ohmic region 135: current blocking layer
140: protective layer 150: light emitting structure
152: second semiconductor layer 154: active layer
156: first semiconductor layer 160: passivation layer
170: first electrode 180: roughness.

Claims (11)

A light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer;
A first electrode disposed on the first semiconductor layer;
An ohmic region disposed under the second semiconductor layer;
A side emitting layer disposed below the ohmic region and transmitting light; And
And a reflective layer disposed on the side emitting layer and including a lower reflective portion disposed below the side emitting layer and an upper reflective portion located within the side emitting layer and connecting the ohmic region and the lower reflective portion,
Wherein the upper reflector does not overlap with the first electrode in the vertical direction. The plasma display panel of claim 1,
Pad portion;
An external electrode extending from the pad portion and disposed on an upper surface edge of the first semiconductor layer; And
And an inner electrode located inside the outer electrode and connected to the outer electrode,
And the upper reflector is aligned between the outer electrode and the inner electrode. 3. The method of claim 2,
Wherein the plurality of upper reflectors and the plurality of upper reflectors are disposed apart from each other. The method according to claim 1,
Wherein the side-emitting layer is made of a light-transmitting nonconductive insulating material. The device of claim 1, wherein the side-
A first side emitting layer disposed below the ohmic region and made of a light transmitting nonconductive insulating material; And
And a second side emitting layer disposed below the first side emitting layer and made of a light transmitting conductive material. The device of claim 1, wherein the side-
And a plurality of light-transmitting insulating layers having different refractive indices. The method of claim 3,
Wherein the plurality of upper reflectors have different diameters with respect to a distance from the pad portion. 8. The method of claim 7,
And the diameter of the plurality of upper reflectors decreases as the pad is positioned adjacent to the pad. 5. The method of claim 4,
Wherein the side-emitting layer comprises at least one of silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), and aluminum oxide (Al 2 O 3 ). The method according to claim 1,
Wherein the thickness of the side-emitting layer is 10 占 퐉 to 100 占 퐉. The method according to claim 1,
And a current blocking layer disposed between the second semiconductor layer and the side-emitting layer, the current blocking layer overlapping with the first electrode in the vertical direction.
KR1020130013686A 2013-02-07 2013-02-07 A light emitting device KR102047440B1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100999701B1 (en) * 2010-02-03 2010-12-08 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device and light emitting device package
KR20120053570A (en) * 2010-11-18 2012-05-29 서울옵토디바이스주식회사 Light emitting diode chip having electrode pad
KR20120078049A (en) * 2010-12-31 2012-07-10 엘지이노텍 주식회사 Light emitting diode and method for fabricating the light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100999701B1 (en) * 2010-02-03 2010-12-08 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device and light emitting device package
KR20120053570A (en) * 2010-11-18 2012-05-29 서울옵토디바이스주식회사 Light emitting diode chip having electrode pad
KR20120078049A (en) * 2010-12-31 2012-07-10 엘지이노텍 주식회사 Light emitting diode and method for fabricating the light emitting device

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