KR20140059992A - A light emitting device package - Google Patents
A light emitting device package Download PDFInfo
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- KR20140059992A KR20140059992A KR1020120126541A KR20120126541A KR20140059992A KR 20140059992 A KR20140059992 A KR 20140059992A KR 1020120126541 A KR1020120126541 A KR 1020120126541A KR 20120126541 A KR20120126541 A KR 20120126541A KR 20140059992 A KR20140059992 A KR 20140059992A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- layer
- light
- silicon
- emitting device
- Prior art date
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
An embodiment includes a substrate, a light emitting element disposed on the substrate, a protection layer disposed on the substrate to surround the light emitting element, the protection layer being made of a first silicon, 2 silicon, wherein the first silicon does not comprise a benzene ring, and the second silicon comprises a benzene ring.
Description
An embodiment relates to a light emitting device package.
BACKGROUND ART Light emitting devices such as light emitting diodes (LEDs) and laser diodes (LD) using semiconducting Group 3-5 or Group 2-6 compound semiconductor materials have been developed with thin film growth technology and device materials, Green, blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam having high efficiency.
Compared with incandescent bulbs, fluorescent lamps, and neon lights, LEDs have low power consumption, high color temperature, and excellent visibility and less glare. The lamp in which the LED is used can be used for a backlight, a display device, a lighting lamp, a vehicle display lamp, a head lamp or the like depending on its use.
The embodiment provides a light emitting device package capable of preventing deformation or discoloration of a lens caused by light.
A light emitting device package according to an embodiment includes a substrate; A light emitting element disposed on the substrate; A protective layer disposed on the substrate so as to surround the light emitting element, the protective layer being made of a first silicon; And a lens disposed on the substrate so as to surround the protective layer, the lens comprising a second silicon, wherein the first silicon does not comprise a benzene ring, and the second silicon comprises a benzene ring.
The first silicon may be Methyl-based silicon, and the second silicon may be Phenyl-based silicon.
The light emitting device package may further include a phosphor layer disposed between the protective layer and the lens.
The protective layer may have a groove portion formed on an upper surface thereof, and the phosphor layer may be located in the groove portion.
The light emitting device may emit light having a wavelength of 380 nm to 460 nm.
The height of the protective layer may be in the range of 100um to 700um, and the height of the lens may be in the range of 1325um to 1525um. The depth of the groove may be 50um to 70um.
The light emitting device package includes: a first lead frame and a second lead frame disposed on the substrate; And a wire connecting the light emitting element and the second lead frame, wherein the light emitting element is disposed on the first lead frame, and the protective layer surrounds the light emitting element and the wire. The refractive index of the first silicon and the refractive index of the second silicon may be different from each other.
The embodiment can prevent deformation or discoloration of the lens caused by light generated in the light emitting element.
1 is a cross-sectional view of a light emitting device package according to an embodiment.
2 is a plan view showing the lead frames of the light emitting device package shown in FIG.
Fig. 3 shows an embodiment of the light emitting device shown in Fig.
Fig. 4 shows another embodiment of the light emitting device shown in Fig.
FIG. 5 shows a chemical structural formula included in the protective layer shown in FIG.
FIG. 6 shows a chemical structural formula that the lens shown in FIG. 1 includes.
Fig. 7 shows the sizes of the protective layer and lens shown in Fig.
Fig. 8 shows a deterioration mechanism of phenyl-based silicon by ultraviolet light or blue light.
9 shows a light emitting device package according to another embodiment
10 shows a light emitting device package according to another embodiment.
11 is an exploded perspective view of a lighting device including a light emitting device package according to an embodiment.
12 shows a display device including a light emitting device package according to an embodiment.
13 shows a head lamp including the light emitting device package according to the embodiment
BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.
In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings. Hereinafter, a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view of a light emitting device package 100-1 according to the embodiment, and FIG. 2 is a plan view showing
1 and 2, a light emitting device package 100-1 includes a
The
For example, the
The
The
The
The
Fig. 3 shows an embodiment 140-1 of the light emitting device shown in Fig.
Referring to FIG. 3, the light emitting device 140-1 may include a
The
On the
The
The
The
The
The
The light emitting device 140-1 may emit light having a wavelength of 380 nm to 460 nm and may include a
The
The
The
The
Fig. 4 shows another embodiment 140-2 of the light emitting device shown in Fig.
4, the light emitting device 300-2 includes a
The
The
The
The
The
The
The
The
The
The
The
The
The
The
The
The
The
FIG. 5 shows a chemical structural formula included in the
The
The
The
FIG. 6 shows a chemical structural formula that the
The
FIG. 7 shows the sizes of the
Referring to FIG. 7, the height D1 of the
The
The photoreflecting portion A1 may be a dome shape to change the course of light emitted from the
The height H1 of the photoreflecting portion A1 may be 1325um to 1525um and the height H2 of the flat portion A2 may be 90um to 110um. The diameter of the photoreflecting portion A1 may be 1.7-1.9 (PHI).
The refractive index of the
The phenyl-based silicone constituting the
Fig. 8 shows a degradation mechanism of phenyl-based silicon by ultraviolet light or blue light.
8, of the UV light or a phenyl-based silicon by a blue light absorbing constituents aromatic compounds, i.e., carbon-carbon double bond of the compound having a benzene ring is destroyed, due to the oxidation by the O 2 gas COOH, and C = O And the like can be formed.
The embodiment provides protection between the light emitting
The silicon-based silicon constituting the
Accordingly, the embodiment includes the
The
The
For example, the first via 191 may connect the first lead frame and the first heat dissipating electrode, and the second via 192 may connect the second lead frame and the second heat dissipating electrode. The first and second lead frames 121 and 122 function as upper electrodes located on the upper side of the
9 shows a light emitting device package 100-2 according to another embodiment. The same reference numerals as those in FIG. 1 denote the same components, and duplicate contents of the foregoing description will be omitted or briefly explained.
9, the light emitting device package 100-2 includes a
The light emitting device package 100-2 may further include a
The
The resin to be mixed with the fluorescent substance is preferably a transparent thermosetting resin having high hardness and high reliability such as a silicone resin, an epoxy resin, a glass, a glass ceramic, a polyester resin, an acrylic resin, a urethane resin, a nylon resin , A polyamide resin, a polyimide resin, a vinyl chloride resin, a polycarbonate resin, a polyethylene resin, a Teflon resin, a polystyrene resin, a polypropylene resin, a polyolefin resin and the like. Preferably, the
The fluorescent material to be mixed with the resin may be at least one kind, and may include at least one of a silicate-based fluorescent material, a YAG-based fluorescent material, and a nitride-based fluorescent material. For example, the silicate-based fluorescent material may be Ca 2 SiO 4 : Eu, Sr 2 SiO 4 : Eu, Sr 3 SiO 5 : Eu, Ba 2 SiO 4 : Eu and (Ca, Sr, Ba) 2 SiO 4 : And the YAG-base phosphor may be Y 3 Al 5 O 12 : Ce, (Y, Gd) 3 Al 5 O 12 : Ce), and the nitride-based phosphor may be Ca 2 Si 5 N 8 : Eu, CaAlSiN 2 : Eu , (Sr, Ca) AlSiN 2 : Eu,?,? -SiAlON: Eu.
Since the
10 shows a light emitting device package 100-3 according to another embodiment. The same reference numerals as those in FIG. 1 denote the same components, and duplicate contents of the foregoing description will be omitted or briefly explained.
9, the protective layer 160-1 of the light emitting device package 100-3 has a
The depth of the
The phosphor layer 205-1 may be located in the
11 is an exploded perspective view of a lighting device including a light emitting device package according to an embodiment.
11, the illumination device includes a
The
A plurality of air flow holes 720 may be provided on the
The
A
12 shows a display device including a light emitting device package according to an embodiment. 12, the
The light emitting module may include light emitting device packages 835 mounted on the
The
Here, the
The
The
In the
Although not shown, a diffusion sheet may be disposed between the
In an embodiment, the diffusion sheet, the
The
13 shows a
The
The
The
The light emitted from the
The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.
110:
130: Adhesive member 140: Light emitting element
150: wire 160: protective layer
170: lens 180: radiation electrode
191, 192: Vias 205: Phosphor layer
Claims (9)
A light emitting element disposed on the substrate;
A protective layer disposed on the substrate so as to surround the light emitting element, the protective layer being made of a first silicon; And
A lens disposed on the substrate to surround the protective layer and made of a second silicon,
Wherein the first silicon does not comprise a benzene ring and the second silicon comprises a benzene ring.
Wherein the first silicon is Methyl silicon and the second silicon is Phenyl silicon.
And a phosphor layer disposed between the protective layer and the lens.
Wherein the protective layer has a groove portion formed on an upper surface thereof, and the phosphor layer is located in the groove portion.
Wherein the light emitting device generates light having a wavelength of 380 nm to 460 nm.
Wherein the height of the protective layer is in the range of 100um to 700um, and the height of the lens is in the range of 1325um to 1525um.
And the depth of the groove portion is 50um to 70um.
A first lead frame and a second lead frame disposed on the substrate; And
And a wire connecting the light emitting element and the second lead frame,
Wherein the light emitting element is disposed on the first lead frame, and the protective layer surrounds the light emitting element and the wire.
Wherein the first silicon and the second silicon have different refractive indices from each other.
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KR1020120126541A KR101979845B1 (en) | 2012-11-09 | 2012-11-09 | A light emitting device package |
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KR1020120126541A KR101979845B1 (en) | 2012-11-09 | 2012-11-09 | A light emitting device package |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20170027088A (en) * | 2015-09-01 | 2017-03-09 | 엘지이노텍 주식회사 | Light emitting device package |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010118620A (en) * | 2008-11-14 | 2010-05-27 | Showa Denko Kk | Light-emitting device |
KR20110110609A (en) * | 2010-04-01 | 2011-10-07 | 엘지이노텍 주식회사 | Light emitting device packag and light unit having the same |
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2012
- 2012-11-09 KR KR1020120126541A patent/KR101979845B1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010118620A (en) * | 2008-11-14 | 2010-05-27 | Showa Denko Kk | Light-emitting device |
KR20110110609A (en) * | 2010-04-01 | 2011-10-07 | 엘지이노텍 주식회사 | Light emitting device packag and light unit having the same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170027088A (en) * | 2015-09-01 | 2017-03-09 | 엘지이노텍 주식회사 | Light emitting device package |
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