KR20110110609A - Light emitting device packag and light unit having the same - Google Patents

Light emitting device packag and light unit having the same Download PDF

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Publication number
KR20110110609A
KR20110110609A KR1020100030020A KR20100030020A KR20110110609A KR 20110110609 A KR20110110609 A KR 20110110609A KR 1020100030020 A KR1020100030020 A KR 1020100030020A KR 20100030020 A KR20100030020 A KR 20100030020A KR 20110110609 A KR20110110609 A KR 20110110609A
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KR
South Korea
Prior art keywords
light emitting
emitting device
light
ceramic substrate
resin layer
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Application number
KR1020100030020A
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Korean (ko)
Inventor
김완호
Original Assignee
엘지이노텍 주식회사
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Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020100030020A priority Critical patent/KR20110110609A/en
Priority to US13/075,354 priority patent/US9039216B2/en
Priority to EP11160775.0A priority patent/EP2372796B1/en
Priority to CN201110086633.5A priority patent/CN102214774B/en
Publication of KR20110110609A publication Critical patent/KR20110110609A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Abstract

The embodiment provides a light emitting device package and a light unit having the same.
The light emitting device package according to the embodiment may include a ceramic substrate; A light emitting device on the ceramic substrate; A first transparent resin layer formed on the ceramic substrate and sealing the light emitting element; And a phosphor layer on the first light-transmissive resin layer.

Description

LIGHT EMITTING DEVICE PACKAG AND LIGHT UNIT HAVING THE SAME}

The embodiment relates to a light emitting device package and a light unit having the same.

Light emitting diodes (LEDs) may be configured to generate light sources using compound semiconductor materials such as GaAs series, AlGaAs series, GaN series, InGaN series, and InGaAlP series.

Such a light emitting diode is packaged and used as a light emitting device that emits various colors, and the light emitting device is used as a light source in various fields such as a lighting indicator for displaying colors, a character display, and an image display.

The embodiment provides a light emitting device package including a light emitting device on a ceramic substrate, a light emitting device package including a light transmissive resin layer on the light emitting device, and a phosphor layer on the light transmissive resin layer.

The embodiment provides a light emitting device package having a phosphor layer disposed between the transparent resin layers, and a light unit having the same.

The light emitting device package according to the embodiment may include a ceramic substrate; A light emitting device on the ceramic substrate; A first transparent resin layer formed on the ceramic substrate and sealing the light emitting element; And a phosphor layer on the first light-transmissive resin layer.

According to an exemplary embodiment, a light unit includes a planar type ceramic substrate, a light emitting device on the ceramic substrate, a first light transmitting resin layer formed on the ceramic substrate and sealing the light emitting device, and a phosphor layer on the first light transmitting resin layer. A light emitting device package comprising; A module substrate in which the light emitting device packages are arrayed; And a light guide plate or an optical sheet disposed on one side of the light emitting device package.

The embodiment can provide a package using a planar type ceramic substrate.

According to the embodiment, a light-transmissive resin layer may be disposed between the phosphor layer and the light emitting device to space the gap between the light emitting device and the phosphor, thereby improving light distribution.

The embodiment can effectively dissipate heat generated from the light emitting device by the ceramic substrate.

The embodiment can improve the reliability of the light emitting device package.

1 is a side cross-sectional view illustrating a light emitting device package according to a first embodiment.
FIG. 2 is a perspective view illustrating a top pattern of the ceramic substrate of FIG. 1.
3 is a bottom view illustrating a bottom pattern of the ceramic substrate of FIG. 1.
4 is a side cross-sectional view illustrating a light emitting device package according to a second embodiment.
5 is a plan view illustrating a top pattern of the ceramic substrate of FIG. 4.
6 is a side cross-sectional view illustrating a light emitting device package according to a third embodiment.
7 is a side cross-sectional view illustrating a light emitting device package according to a fourth embodiment.
8 is a side cross-sectional view illustrating a light emitting device package according to a fifth embodiment.
9 is a plan view illustrating a top pattern of the ceramic substrate of FIG. 8.
FIG. 10 is a bottom view illustrating a bottom pattern of the ceramic substrate of FIG. 8.
11 and 12 are side views showing the appearance of the package according to the embodiment.
13 is a side cross-sectional view illustrating a display device according to a sixth embodiment.
14 is a diagram illustrating another layout example of the light emitting device package of FIG. 13.

Hereinafter, in describing the embodiments, the criteria for the top or bottom of each layer may be described with reference to the drawings, and the thickness of each layer is described as an example and is not limited to the thickness of the drawings. In an embodiment, each layer, region, pattern, or structure is described as being formed "on" or "under" a substrate, each layer (film), region, pad, or pattern. Where "on" and "under" include both "directly" and "indirectly".

Hereinafter, exemplary embodiments will be described with reference to the accompanying drawings. 1 is a side cross-sectional view of a light emitting device package, FIG. 2 is a plan view illustrating an electrode pad on the ceramic substrate of FIG. 1, and FIG. 3 is a bottom view of the ceramic substrate of FIG. 1.

1 to 3, the light emitting device package 100 may include a substrate 110, first and second electrode patterns 111 and 113, third and fourth electrode patterns 121 and 123, a heat dissipation pattern 125, and conductive materials. The vias 131, 133, and 135 include a light emitting element 140, a first transparent resin layer 150, and a phosphor layer 155.

The substrate 110 has good heat resistance and excellent resistance to discoloration due to heat. The material of the substrate 110 may be alumina, quartz, calcium zirconate, sterite, SiC, graphite, fused silica, mullite, cordierite. cordierite, zirconia, beryllia, aluminum nitride, low temperature co-fired ceramic (LTCC), and the like. Hereinafter, for convenience of description, the substrate 110 will be described as a ceramic substrate as an example.

The ceramic substrate 110 may be implemented as a single layer substrate or a multilayer substrate using a structure of a single-side copper foil layer or a double-sided copper foil layer. The copper foil layer may be formed of a metal plate selectively using a conductive metal such as Cu, Ag, Al, Ni, or Au, and may be provided in a predetermined pattern shape through an etching process. Here, the outer shape of the ceramic substrate 110 may be formed in a circular or polygonal shape, but is not limited thereto.

2 and 3, first and second electrode patterns 111 and 113 are formed on the top surface 110A of the ceramic substrate 110, and third and fourth electrode patterns 121 and 123 are formed on the bottom surface 110B. The heat radiation pattern 125 may be formed. A portion of the first electrode pattern 111 and the third electrode pattern 121 correspond to each other and are connected to at least one first conductive via 131. A portion of the second electrode pattern 113 and the fourth electrode pattern 123 correspond to each other and are connected to at least one second conductive via 133.

The first electrode pattern 111 may be formed larger than the second electrode pattern 113, and may be formed in a pattern branched in various directions to dissipate the light emitting device 140.

The heat dissipation pattern 125 corresponding to the first electrode pattern 111 may be formed on the bottom surface 110B of the ceramic substrate 110. A portion of the first electrode pattern 111 and the heat dissipation pattern 125 correspond to each other and are connected to at least one third conductive via 135. The heat dissipation pattern 125 may be provided larger than the sizes of the third and fourth electrode patterns 121 and 123.

The light emitting device 140 is disposed on the first electrode pattern 111, and the light emitting device 140 is mounted on the first electrode pattern 111 with a conductive adhesive or solder.

The second electrode pattern 113 may be spaced apart from the first electrode pattern 111 and may be connected to the light emitting device 140 by a wire 142.

The first electrode pattern 111 and the second electrode pattern 113 are formed to correspond to the center region of the ceramic substrate 110 and are electrically connected to the light emitting device 140.

The light emitting device 140 may be connected to the first and second electrode patterns 111 and 113 using a bonding method such as a die bonding method, a flip chip bonding method, a wire bonding method, and the like according to an electrode position or a chip type of the chip. It does not limit to this.

1 to 3, the first to third conductive vias 131, 133, and 135 are penetrated to connect the pattern disposed on the ceramic substrate 110 and the pattern disposed below. Is formed. The plurality of conductive vias 131, 133, and 135 formed in the ceramic substrate 110 may be filled with a conductive material such as Ag in a via hole or through hole, or a conductive material may be coated around the hole. Here, the third electrode pattern 121 and the heat dissipation pattern 125 may be formed in an integral pattern, and the pattern shape may be changed according to heat dissipation efficiency.

The light emitting device 140 may include a blue LED chip, a green LED chip, a colored LED chip such as a red LED chip, a UV LED chip, and the like, and may be provided on the ceramic substrate 110. Can be deployed.

Referring to FIG. 1, a resin layer having a lower refractive index than the semiconductor medium of the light emitting device may be formed on the ceramic substrate 110. The resin layer may include a phosphor as an encapsulant covering the light emitting device 140. The resin layer includes, for example, a first light transmitting resin layer 150 and a phosphor layer 155.

The first transparent resin layer 150 is formed on the ceramic substrate 110, and the phosphor layer 155 is formed on the transparent resin layer 150. The first light-transmissive resin layer 150 and the phosphor layer 155 may include a resin material, for example, silicon, epoxy, or a hybrid resin material, but is not limited thereto.

The first transparent resin layer 150 seals the light emitting device 140 and the first and second electrode patterns 111 and 113. The first light-transmissive resin layer 150 may be formed to have a thickness greater than or equal to the thickness of the light emitting device 140, and may be formed to have a uniform thickness on the ceramic substrate 110 or may be unevenly formed along a structure shape. .

The phosphor layer 155 may be formed on the first light-transmissive resin layer 150. The phosphor layer 155 may be molded or coated, and may include at least one phosphor, but is not limited thereto. The phosphor layer 155 may be formed to a predetermined thickness on the entire surface of the first transparent resin layer 150.

The phosphor of the phosphor layer 155 excites the light emitted from the light emitting element 140 to emit light at a long wavelength, and may include, for example, a green phosphor, a red phosphor, and a blue phosphor. Alternatively, the phosphor may emit light having a complementary color relationship with the color spectrum of the light emitting device 140.

Since the first transparent resin layer 150 is disposed between the phosphor layer 155 and the light emitting device 140, the light emitted from the light emitting device 140 is diffused by the first light transmitting resin layer 155. A portion of the diffused light may be absorbed by the phosphor layer 155 and then emit light. Accordingly, the light emitted through the phosphor layer 155 may have a uniform color distribution.

The length of the phosphor layer 155 may be formed to be the same as the length of the first light-transmissive resin layer 155, and the thickness thereof may be thinner than the thickness of the first light-transmissive resin layer 155.

Since the light emitting device 140 is disposed on the planar type ceramic substrate 110, the directivity angle may emit light with a distribution of 120 degrees or more in all directions. In addition, since the phosphor layer 155 is disposed in the entire region of the light emitting device package 100 on the ceramic substrate 110, the light emitting device package 100 may be provided with a uniform color distribution on the orientation angle distribution.

4 is a side cross-sectional view of a light emitting device package according to a second embodiment, and FIG. 5 is a plan view illustrating an example in which a light emitting device and a protection device are disposed in a pattern on the ceramic substrate of FIG. 4. A description of the second embodiment will be described with reference to the first embodiment.

4 and 5, the light emitting device package 100A includes a light emitting device 140A, a first transparent resin layer 150, a phosphor layer 155, and a second transparent resin layer 160.

The light emitting device 140A may be mounted on the first electrode pattern 111 and the second electrode pattern 113 corresponding to each other by a flip chip method using conductive bumps or the like.

A second light-transmissive resin layer 160 is formed on the phosphor layer 150, and the second light-transmissive resin layer 160 covers the entire upper surface of the phosphor layer 155. Injection molding of the same material).

The second light-transmissive resin layer 160 includes a lens portion 162, and a center of the lens portion 162 corresponds to an optical axis perpendicular to the light emitting element 140A, and the shape of the second transparent resin layer 160 is the light emitting element ( It is formed into a hemispherical shape protruding upward with respect to 140A). The lens unit 162 may be formed to a maximum diameter of 120um or more.

Referring to FIG. 5, end portions of the first electrode pattern 111 and the second electrode pattern 113 may correspond to edge regions of the ceramic substrate 110, and the corresponding two patterns 111 and 113 may be formed on the edge regions of the ceramic substrate 110. Protection elements such as an Zener diode and a transient voltage suppression (TVS) diode may be mounted electrically connected, for example, in a flip chip method. The protection device of the embodiment is disposed closer to the edge of the ceramic substrate 110 than the light emitting device 140A, thereby reducing the loss of light emitted from the light emitting device 140A. The protection element 145 may be connected by at least one wire, but is not limited thereto.

The lens unit 162 of the second light-transmissive resin layer 160 is disposed on the light emitting element 140A, and regions other than the lens unit 162 are formed flat so as to have a uniform thickness on the phosphor layer 155. Can be formed.

6 is a side cross-sectional view illustrating a light emitting device package according to a third embodiment. The description of the third embodiment will be described with reference to the first embodiment.

Referring to FIG. 6, the light emitting device package 100B includes a first translucent resin layer 150A having a third length A3 and a phosphor layer 155A having a second length A2 on an upper surface of the ceramic substrate 110. ), A second translucent resin layer 160 having a first length A1. The lengths have a relationship of A1 <A2 <A3. The lengths A1, A2, and A3 are defined based on either side of the ceramic substrate.

Accordingly, the phosphor layer 155A is formed to surround the upper surface and the outer side surface of the first light-transmissive resin layer 150A, and the second light-transmissive resin layer 160A is formed on the top surface of the phosphor layer 155A and It is formed in the form of enclosing the outer side. The first light-transmissive resin layer 150A, the phosphor layer 155A, and the second light-transmissive resin layer 160A may be adhered to the top surface of the ceramic substrate 110, respectively, Moisture can be prevented from penetrating through the interface. In addition, the phosphor layer 155A may be prevented from being exposed to the outside of the package.

7 is a side cross-sectional view illustrating a light emitting device package according to a fourth embodiment. The description of the fourth embodiment will be described with reference to the first embodiment.

Referring to FIG. 7, in the light emitting device package 100C, a first light-transmissive resin layer 150 is formed on an entire upper surface of the ceramic substrate 110, and a phosphor layer 155B is formed on the first light-transmissive resin layer 150. The second light-transmissive resin layer 160 is formed on the phosphor layer 155B.

The length A4 of the phosphor layer 155B is less than the length A1 of the first light-transmissive resin layer, and the second light-transmissive resin layer 160 has the same length A1 as the first light-transmissive resin layer 150. It can be formed into). Accordingly, since the second transparent resin layer 160 is in contact with the outer side of the upper surface of the first transparent resin layer 150, the second transparent resin layer 150 and the second transparent resin layer 160 The phosphor layer 155B is disposed in a sealed form. The lengths A1, A2, and A4 are defined based on either side of the ceramic substrate.

8 is a side cross-sectional view illustrating a light emitting device package according to a fifth embodiment. 9 is a plan view illustrating a pattern disposed on an upper surface of the ceramic substrate of FIG. 8, and FIG. 10 is a bottom view illustrating a pattern disposed on a lower surface of the ceramic substrate of FIG. 8. The description of the fifth embodiment will be referred to the first embodiment.

8 to 10, the first electrode pattern 111, the second electrode pattern 113, and the first heat dissipation pattern 115 are provided on the upper surface of the ceramic substrate 110, and the third electrode pattern is disposed on the lower surface of the ceramic substrate 110. And a fourth electrode pattern 123 and a second heat radiation pattern 125. A plurality of conductive vias 115, 125, and 135 are included in the ceramic substrate 110.

The first heat dissipation pattern 115 is disposed between the first electrode pattern 111 and the second electrode pattern 113, and the second heat dissipation pattern 125 is disposed between the third electrode pattern 121 and the first electrode pattern 111. The fourth electrode pattern 123 is disposed between the fourth electrode patterns 123.

The light emitting device 140B is attached to the first heat radiation pattern 115, and the light emitting device 140 is connected to the first electrode pattern 111 and the second electrode pattern 113 by a wire 142. .

The first electrode pattern 111 and the third electrode pattern 121 face each other and are connected to the first conductive via 131, and the second electrode pattern 113 and the fourth electrode pattern 123 are The first heat dissipation pattern 115 and the second heat dissipation pattern 125 are connected to each other and connected to the second conductive via 133 by a third conductive via 135. Each of the first to third conductive vias 115, 125, and 135 may be disposed in plural instead of a single one for the purpose of conduction efficiency, but is not limited thereto.

Heat generated from the light emitting device 140 may be conducted and radiated to the second heat radiation pattern 125 through the first heat radiation pattern 115 and the third conductive via 135.

The ceramic substrate 110 includes a first light-transmissive resin layer 150, a phosphor layer 155, and a second light-transmissive resin layer 160.

The position of the phosphor layer 155 is higher than the high point height of the wire 142 or higher than the high point height of the wire 142 based on the high point height T1 of the wire 142 connected to the light emitting device 140B. Can be formed. The high point height T1 of the wire 142 does not come into contact with the second light-transmissive resin layer 160, so that the phosphor particles travel to the second light-transmissive resin layer 160 by riding the wire 142. Can be prevented.

11 and 12 are views illustrating an appearance of a package according to an embodiment. FIG. 11 is a side view of the first direction Z of the package, and FIG. 12 is a side view of the second direction X rotated at right angles to the first direction of FIG. 11.

Referring to FIG. 11, when the light emitting device package 101 is viewed in the first direction Z, the position of the light emitting device 140A may be at any one side L1 <L2 with respect to the extension line of the first direction X. Referring to FIG. It is placed away. For example, it is disposed in the left region on the ceramic substrate 110, and this arrangement may add another pattern, a protection element, or the like to the right region.

Accordingly, since the lens unit 162 of the resin layer 170 on the light emitting device 140A is disposed in one region of the first direction Z, most of the light may be distributed on the one region. In the resin layer 170, a first light-transmissive resin layer 150, a phosphor layer 155, and a second light-transmissive resin layer 160 are sequentially stacked.

Referring to FIG. 12, the structure is rotated 90 degrees with reference to FIG. 11, and is viewed from the second direction X, which is a direction perpendicular to the first direction Z. Referring to FIG. The light emitting device 140A may be disposed at a central portion with respect to an extension line in the first direction Z when viewed in the second direction X. Referring to FIG. Thereby, the lens part 170 of the resin layer 170 is arrange | positioned at the center.

The ceramic substrate 110 of FIGS. 11 and 12 has the same length in the first direction Z and the second direction X, but it may be different, but is not limited thereto.

13 is a diagram illustrating a display device according to a sixth embodiment. The package disclosed in the description of FIG. 13 will be referred to the packages of FIGS. 11 and 12.

Referring to FIG. 13, the display device 200 includes a bottom cover 201, a module substrate 210 in which a plurality of light emitting device packages 101 are disclosed, an optical member 250, and a display panel 260. It includes.

The module substrate 210 and the light emitting device package 101 may be defined as light emitting modules, and the bottom cover 201, at least one light emitting module, and the optical member 250 may be defined as light units.

Here, the light emitting device package 101 disposed on the module substrate 210 may be arranged at regular intervals with the lens unit of the resin layer 170, and may emit light with uniform luminance distribution over the entire area. That is, the light emitting device package 101 as shown in FIG. 12 is arrayed on the module substrate 210.

The bottom cover 201 may be formed of a material such as a chassis or a mold frame, and the module substrate 210 may be accommodated therein.

A plurality of light emitting device packages 101 are arrayed on the module substrate 210, and the light emitting device packages 101 are solder bonded onto the module substrate 210. Here, a circuit pattern is formed on the module substrate 210, the ceramic substrate 110 is mounted, and enables selective connection between the plurality of light emitting device packages 101.

The light emitting device package 101 emits light emitted from the light of the light emitting device and the phosphor of the phosphor layer, and the light is mixed with each other and irradiated through the optical member 250 and the display panel 260 as target light. .

Here, the optical member 250 may include at least one of a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

The display panel 260 is disposed on the optical member 250, and the display panel 260 is, for example, an LCD panel, and includes first and second substrates of transparent materials facing each other, and between the first and second substrates. It includes a liquid crystal layer interposed therein. A polarizer may be attached to at least one surface of the display panel 260, but the polarizer is not limited thereto. The display panel 260 displays information by light passing through the optical member 250.

The display device 200 may be applied to a portable terminal, a monitor of a notebook computer, a monitor of a laptop computer, a television, and the like.

14 illustrates another example of the display device of FIG. 12, wherein an array of light emitting device packages is changed.

Referring to FIG. 14, the display device 200A has a structure in which the light emitting device package 101 is differently disposed on the module substrate 21.

The lens portion of the light emitting device package 101 disposed in the center area C0 is disposed in the direction as shown in FIG. 12, and the lens portion of the light emitting device package 101 disposed in an area other than the center area C0 is shown in FIG. May be arranged in the same direction. Accordingly, the distance between the lens units between the light emitting device packages 101 may be greater than the distance D2 of the center area than that of the other areas. According to the embodiment, the light distribution elements and the lens unit disposed on the packages of FIGS. 11 and 12 may be used to have different light distributions in one kind of package. The lens unit may be formed to correspond to the light emitting device as shown in FIGS. 12 and 13.

Meanwhile, the module substrate 210 may be vertically placed to provide light to at least one side of the light guide plate in a side view manner. That is, the module substrate may be disposed to correspond to one side, both sides, and two adjacent side surfaces of the light guide plate, but is not limited thereto. A reflective plate may be disposed below the light guide plate, and an optical sheet may be disposed above, but the present invention is not limited thereto.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

Although the above description has been made with reference to the embodiments, these are only examples and are not intended to limit the present invention, and those of ordinary skill in the art to which the present invention pertains should not be exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

DESCRIPTION OF REFERENCE NUMERALS 100: light emitting device package, 110: ceramic substrate, 111, 113, 121, 123: electrode pattern, 125: heat dissipation pattern, 131, 133, 135: conductive via, 140, 140A: light emitting element, 150: first light transmitting resin layer, 155: phosphor layer, 160: second light transmitting Resin layer, 162: lens unit

Claims (17)

Ceramic substrates;
A light emitting device on the ceramic substrate;
A first transparent resin layer formed on the ceramic substrate and sealing the light emitting element; And
A light emitting device package comprising a phosphor layer on the first light-transmissive resin layer. The light emitting device package of claim 1, further comprising a second light-transmissive resin layer on the phosphor layer. 3. The light emitting device package of claim 2, wherein the second light transmitting resin layer comprises a lens portion convex upward on the light emitting device. The light emitting device of claim 2, wherein the light emitting device is any one of a blue LED chip, a red LED chip, a green LED chip, and a UV LED chip.
The phosphor layer includes a phosphor that excites the light emitted from the light emitting device to emit light at a longer wavelength than the light emitting device. The light emitting device package of claim 2, wherein the first light transmitting resin layer and the phosphor layer have the same length. The light emitting device package of claim 2, wherein the second translucent resin layer surrounds the circumference of the phosphor layer and contacts the upper surface of the first translucent phosphor layer or the ceramic substrate. The display device of claim 1, further comprising: first and second electrode patterns disposed on the ceramic substrate and electrically connected to the light emitting devices; Third and fourth electrode patterns disposed under the ceramic substrate; And a plurality of first and second conductive vias connected to each other according to polarities of the first and second electrode patterns and the third and fourth electrode patterns. The semiconductor device of claim 7, further comprising: a heat dissipation pattern under the ceramic substrate; And a third conductive via connecting the heat dissipation pattern to the first electrode pattern or the second electrode pattern. The light emitting device package of claim 8, wherein the light emitting device is disposed on a first electrode pattern connected to the heat radiation pattern. The method of claim 7, further comprising: a first heat radiation pattern on the substrate; And a second heat dissipation pattern under the substrate; A fourth conductive via connecting the first and second heat dissipation patterns,
The light emitting device package in which the light emitting device is disposed on the first heat radiation pattern. The light emitting device package of claim 7, wherein the light emitting device is connected to at least one of a wire, a conductive bump, and a solder to the first and second electrode patterns. The light emitting device package of claim 1, wherein an upper surface of the ceramic substrate is formed in a planar type. The light emitting device package of claim 7, further comprising a protection device electrically connected to the first electrode pattern and the second electrode pattern. The light emitting device package of claim 1, wherein the protection device is disposed closer to the edge of the ceramic substrate than the light emitting device. The method of claim 14, wherein the ceramic substrate is alumina, quartz, calcium zirconate, forsterite, SiC, graphite, fused silica, mullite, muscle A light emitting device package comprising at least one of cordierite, zirconia, beryllia, and aluminum nitride, and low temperature co-fired ceramic (LTCC). A light emitting device package comprising a planar type ceramic substrate, a light emitting device on the ceramic substrate, a first light transmitting resin layer formed on the ceramic substrate and sealing the light emitting device, and a phosphor layer on the first light transmitting resin layer;
A module substrate in which the light emitting device packages are arrayed; And
The light unit including a light guide plate or an optical sheet disposed on one side of the light emitting device package. The light unit of claim 16, further comprising a second transmissive resin layer having a convex lens portion over the area of the light emitting element on the phosphor layer.
KR1020100030020A 2010-04-01 2010-04-01 Light emitting device packag and light unit having the same KR20110110609A (en)

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KR1020100030020A KR20110110609A (en) 2010-04-01 2010-04-01 Light emitting device packag and light unit having the same
US13/075,354 US9039216B2 (en) 2010-04-01 2011-03-30 Light emitting device package and light unit having the same
EP11160775.0A EP2372796B1 (en) 2010-04-01 2011-04-01 Light emitting diode package and light unit including the same
CN201110086633.5A CN102214774B (en) 2010-04-01 2011-04-01 Light emitting device package and light unit having the same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140059992A (en) * 2012-11-09 2014-05-19 엘지이노텍 주식회사 A light emitting device package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140059992A (en) * 2012-11-09 2014-05-19 엘지이노텍 주식회사 A light emitting device package

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