KR20170027088A - Light emitting device package - Google Patents

Abstract

According to an embodiment, a light emitting diode package comprises: a light emitting device; a first wavelength conversion layer which covers an upper side of the light emitting device and includes a first wavelength converting particle; and a second wavelength converting layer which covers a lateral side of the light emitting device and includes a second wavelength converting particle, wherein the refractive index of the first wavelength conversion layer is lower than the refractive index of the second wavelength conversion layer.

Description

[0001] LIGHT EMITTING DEVICE PACKAGE [0002]

An embodiment relates to a light emitting device package.

A light emitting device (LED) is a compound semiconductor device that converts electric energy into light energy. By controlling the composition ratio of the compound semiconductor, various colors can be realized.

The nitride semiconductor light emitting device has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps. Accordingly, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting diode lighting device capable of replacing a fluorescent lamp or an incandescent lamp, And traffic lights.

A CSP (Chip Scale Package) type light emitting device package can be manufactured by forming a phosphor layer directly on a light emitting device. The phosphor layer generally uses phenyl-based silicon. However, the phenyl-based silicone has a relatively high hardness and cracks are generated.

The embodiment provides a light emitting device package that can prevent cracks and improve reliability.

A light emitting device package according to an embodiment of the present invention includes: a light emitting element; A first wavelength conversion layer covering an upper surface of the light emitting device and including first wavelength conversion particles; And a second wavelength conversion layer covering the side surface of the light emitting device and including second wavelength conversion particles, wherein a refractive index of the first wavelength conversion layer is lower than a refractive index of the second wavelength conversion layer.

The hardness of the first wavelength conversion layer may be lower than the hardness of the second wavelength conversion layer.

And a concavo-convex portion formed between the first wavelength conversion layer and the second wavelength conversion layer.

The content of the first wavelength converting particles may be larger than the content of the second wavelength converting particles.

The first wavelength conversion layer may include methyl-based silicon.

The light emitting element may be a flip chip.

Wherein the light emitting device comprises: a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; A first electrode pad electrically connected to the first semiconductor layer through the second semiconductor layer and the active layer at one side of the light emitting structure; And a second electrode pad electrically connected to the second semiconductor layer on one side of the light emitting structure.

According to the embodiment, cracking of the phosphor layer can be prevented and reliability can be improved.

In addition, the color temperature variation of light emitted from the upper surface and the side surface of the light emitting device package can be improved, and the light flux of the light emitting device package can be improved.

The various and advantageous advantages and effects of the present invention are not limited to the above description, and can be more easily understood in the course of describing a specific embodiment of the present invention.

1 is a conceptual view of a light emitting device package according to an embodiment of the present invention,
Fig. 2 is a first modification of Fig. 1,
Fig. 3 is a second modification of Fig. 1,
FIG. 4 is a graph illustrating a color temperature of the light emitting device package of FIG. 1,
5 is a conceptual diagram of a conventional light emitting device package,
6 is a graph illustrating a color temperature difference of a conventional light emitting device package,
7 is a conceptual diagram of the light emitting device of FIG. 1,
8A to 8C are flowcharts for explaining a method of manufacturing a light emitting device package according to an embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the embodiments of the present invention are not intended to be limited to the specific embodiments but include all modifications, equivalents, and alternatives falling within the spirit and scope of the embodiments.

Terms including ordinals, such as first, second, etc., may be used to describe various elements, but the elements are not limited to these terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the embodiments, the second component may be referred to as a first component, and similarly, the first component may also be referred to as a second component. And / or < / RTI > includes any combination of a plurality of related listed items or any of a plurality of related listed items.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the embodiments of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

In the description of the embodiments, in the case where one element is described as being formed "on or under" another element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings, wherein like or corresponding elements are denoted by the same reference numerals, and redundant description thereof will be omitted.

FIG. 1 is a conceptual diagram of a light emitting device package according to an embodiment of the present invention, FIG. 2 is a first modification of FIG. 1, FIG. 3 is a second modification of FIG. 1, And the color temperature of the package is measured.

Referring to FIG. 1, a light emitting device package 10 according to an embodiment includes a light emitting device 100, a first wavelength conversion layer (not shown) covering an upper surface of the light emitting device 100 and including first wavelength conversion particles P1 210 and a second wavelength conversion layer 220 covering the side surface of the light emitting device 100 and including second wavelength converting particles P2. The light emitting device package 10 may be a chip scale package (CSP).

The first light L1 emitted from the upper surface of the light emitting device 100 is converted into white light by the first wavelength conversion layer 210 and the second light L2 emitted from the side surface of the light emitting device 100 is converted into white light 2 wavelength conversion layer 220. In this case,

The light emitting device 100 can emit light in the ultraviolet wavelength range or light in the blue wavelength range. The light emitting device 100 may have a flip chip structure in which an n-type electrode and a p-type electrode are disposed on one side. The structure of the light emitting device 100 will be described later.

The first wavelength conversion layer 210 and the second wavelength conversion layer 220 may cover the upper surface and the side surface of the light emitting device 100, respectively. The upper surface may be the main light emitting surface of the light emitting device 100, and the side surface may be the thickness direction surface of the light emitting device 100.

The first wavelength conversion layer 210 and the second wavelength conversion layer 220 may include a polymer resin. The polymer resin may be at least one of a light-transmitting epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin. As an example, the polymer resin may be a silicone resin.

The first wavelength conversion particle P1 dispersed in the first wavelength conversion layer 210 and the second wavelength conversion particle P2 dispersed in the second wavelength conversion layer 220 are dispersed in the light emitted from the light emitting element 100 Absorbed and converted into white light.

The refractive index of the first wavelength conversion layer 210 may be lower than the refractive index of the second wavelength conversion layer 220. For example, the refractive index of the first wavelength conversion layer 210 may be 1.41 to 1.43, and the refractive index of the second wavelength conversion layer 220 may be 1.51 to 1.54.

The hardness of the first wavelength conversion layer 210 may be lower than the hardness of the second wavelength conversion layer 220. For example, the hardness of the first wavelength conversion layer 210 may be Shore A10 to A70, and the hardness of the second wavelength conversion layer 220 may be Shore D30 to D70. Shore D hardness can be measured by ASTM D2240 method, but is not limited thereto.

The thermal expansion coefficient (CTE) of the first wavelength conversion layer 210 may be higher than the thermal expansion coefficient of the second wavelength conversion layer 220. For example, the thermal expansion coefficient of the first wavelength conversion layer 210 may be 300 to 400, and the thermal expansion coefficient of the second wavelength conversion layer 220 may be 110 to 210. [

The first wavelength conversion layer 210 may be a methyl-based silicon and the second wavelength conversion layer 220 may be a phenyl-based silicon. The methyl-based silicone can be defined as a silicone compound having an alkyl group or a methyl group, and the phenyl-based silicone can be defined as a silicone compound having an aryl group or a phenyl group.

Unless otherwise specified, the alkyl group (methyl group) is a straight chain or branched chain alkyl group having 1 to 20 carbon atoms, 1 to 16 carbon atoms, 1 to 12 carbon atoms, 1 to 8 carbon atoms or 1 to 4 carbon atoms, 3 to 16, or a cycloalkyl group having 4 to 12 carbon atoms. The alkyl group may be optionally substituted with one or more substituents.

Unless otherwise specified, the aryl group (phenyl group) may mean a monovalent residue derived from a compound or derivative containing benzene or a structure containing two or more benzenes condensed or bonded thereto . The aryl group may be, for example, an aryl group having 6 to 22 carbon atoms, preferably 6 to 16 carbon atoms, and more preferably 6 to 13 carbon atoms, and may be a phenyl group, a phenylethyl group, a phenylpropyl group, a benzyl group, A silyl group (xylyl group) or a naphthyl group.

The methyl-based silicone may be polydimethylsiloxane, and the phenyl-based silicone may be polymethylphenylsiloxane. However, the present invention is not necessarily limited thereto, and the methyl-based silicone may be a concept including both an alkyl group or a silicon containing silicon and satisfying at least one of the above-mentioned conditions (refractive index, hardness, thermal expansion coefficient). Further, the phenyl-based silicone may include all of silicones containing an aryl group or a phenyl group and satisfying at least one of the above-mentioned conditions.

The first wavelength conversion particle (P1) and the second wavelength conversion particle (P2) may include at least one of a phosphor and a quantum dot (QD). Hereinafter, the wavelength converting particle is described as a phosphor.

The first phosphor P1 and the second phosphor P2 may include any one of a YAG-based, TAG-based, silicate-based, sulfide-based or nitride-based fluorescent material, but the embodiment is not limited to the type of the phosphor.

YAG and TAG-based fluorescent material is (Y, Tb, Lu, Sc , La, Gd, Sm) 3 (Al, Ga, In, Si, Fe) 5 (O, S) 12: selected from Ce to be available and, (Sr, Ba, Ca, Mg) ₂ SiO ₄ : (Eu, F, Cl) may be used as the silicate-based fluorescent material.

The phosphor can be selected from (Ca, Sr) S: Eu, (Sr, Ca, Ba) (Al, Ga) ₂ S ₄ : Eu, , Al, O) N: Eu ( for example, CaAlSiN4: Eu β-SiAlON: Eu) or Ca-α SiAlON: Eu sealed _{(Ca x, M y) (} Si, Al) 12 (O, N) can be ₁₆ days . Where M is at least one of Eu, Tb, Yb or Er and can be selected from phosphor components satisfying 0.05 <(x + y) <0.3, 0.02 <x <0.27 and 0.03 <y <0.3.

The red phosphor may be a nitride based phosphor containing N (e.g., CaAlSiN ₃ : Eu) or a KSF (K ₂ SiF ₆ ) phosphor.

An interface S may be formed between the first wavelength conversion layer 210 and the second wavelength conversion layer 220. This is because the first wavelength conversion layer 210 and the second wavelength conversion layer 220 are separately manufactured.

Referring to FIG. 2, the irregularities S1 may be formed on the interface. Uneven part (S1) may include a high scattering the particles, such as TiO _2. With this configuration, the probability that the light L3 passing through the first wavelength conversion layer 210 in the second wavelength conversion layer 220 is refracted or reflected is reduced, thereby improving the brightness. In addition, the coupling strength between the first wavelength conversion layer 210 and the second wavelength conversion layer 220 can be improved by the uneven portion S1.

Referring to FIG. 3, the thickness of the first wavelength conversion layer 210 may become thinner toward the side. That is, the first wavelength conversion layer 210 may have a lens shape. However, the first wavelength conversion layer 210 may be in the form of a film having a constant thickness.

Referring again to FIG. 1, the content of the first phosphor P1 may be larger than that of the second phosphor P2. In general, the color temperature of the light emitted from the upper surface of the light emitting device package 10 may be higher than the color temperature of the light emitted from the side.

The higher the phosphor content, the lower the color temperature. Accordingly, the embodiment increases the color temperature of the white light converted by the first wavelength conversion layer 210 and the color temperature deviation of the white light converted by the second wavelength conversion layer 220 by increasing the content of the first phosphor P1 . This can be achieved by separately fabricating the first wavelength conversion layer 210 and the second wavelength conversion layer 220.

When a cool white light emitting device package having a color temperature of 5000K or more is manufactured, the content of the first phosphor P1 may be 120 wt% to 140 wt% based on 100 wt% of the polymer resin. The content of the second fluorescent material P2 may be 80 wt% to 120 wt% based on 100 wt% of the polymer resin. In the wavelength conversion layer 200, the phosphor content may be higher than the content of the polymer resin.

When a warm white light emitting device package having a color temperature of 5000 K or less is manufactured, the content of the first phosphor P1 may be 220 wt% to 240 wt% based on 100 wt% of the polymer resin. The content of the second fluorescent material P2 may be in the range of 180 wt% to 220 wt% based on 100 wt% of the polymer resin.

The thickness D1 in the optical axis direction of the first wavelength conversion layer 210 may be 50 占 퐉 or more and 100 占 퐉. When the thickness D1 of the first wavelength conversion layer 210 is less than 50 占 퐉, there is a problem that it is difficult to realize white light in the CIE color coordinate system. When the thickness D1 is more than 100 占 퐉, the light flux is reduced. The width W1 of the second wavelength conversion layer 220 perpendicular to the optical axis may be 100 mu m. Therefore, the ratio of the thickness D1 in the optical axis direction of the first wavelength conversion layer 210 to the width W1 of the second wavelength conversion layer 220 may be 0.5: 1 to 1: 1.

Referring to FIG. 4, it can be seen that the color temperature of the light emitted from the upper surface of the light emitting device package and the light emitted from the side surface are substantially similar. Specifically, the color temperature of the light emitted through the first wavelength conversion layer (e.g., light having an angle of +/- 50 degrees with respect to the optical axis 0 degree) and the light emitted through the second wavelength conversion layer The light having the angle of +/- 50 degrees to +/- 90 degrees with respect to the color temperature) may be 500 K or less.

FIG. 5 is a conceptual diagram of a conventional light emitting device package, and FIG. 6 is a graph illustrating a color temperature difference and a light flux change of a conventional light emitting device package.

Referring to FIG. 5, the conventional light emitting device package may form the wavelength conversion layer 20 on the upper surface and the side surface of the light emitting device 100 at the same time. That is, the same amount of fluorescent material is dispersed in the wavelength conversion layer 20.

5A, the light emitting device package of Experimental Example 1 has a structure in which the thickness D2 of the upper surface of the wavelength conversion layer 20 is 100 mu m and the width W2 of the side surface is 200 mu m, The light emitting device package of Experimental Example 2 has a thickness D3 of the upper surface of the wavelength conversion layer of 200 mu m and a side width W3 of 200 mu m, In the package, the thickness D4 of the upper surface of the wavelength conversion layer is 300 mu m and the width W4 of the side surface is 200 mu m.

Table 1 below shows the measurement results of the color temperature difference (? CCT) and the luminous flux (Lm) of Experimental Examples 1 to 3. Here, the color temperature difference can be defined as a deviation of the color temperature of the light emitted from the upper surface of the wavelength conversion layer and the color temperature of the light emitted from the side surface.

CCT Lm Experimental Example 1 1909 156.7 Experimental Example 2 1191 148.7 Experimental Example 3 367 143.4

Referring to Table 1, FIG. 5, and FIG. 6, in Experimental Example 1, the luminous flux is high but the color temperature difference is large. Experimental Example 3 shows that the color temperature difference is improved but the light flux is decreased.

As a result of the experiment, it can be seen that the transmittance decreases as the thickness of the upper surface of the wavelength conversion layer increases, and the light flux decreases. In addition, it can be confirmed that if the thickness of the upper surface is reduced to prevent the light flux from dropping, there is a problem that the color temperature difference (? CCT) on the upper surface and the side surface becomes larger.

That is, when the upper surface and the side surface of the wavelength conversion layer are simultaneously fabricated, since the phosphor content is the same, it is difficult to simultaneously improve the light flux and the color temperature deviation. On the other hand, the embodiment of the present invention has the effect of improving the color temperature difference while maintaining or improving the luminosity by reducing the thickness of the upper surface since the amount of phosphor on the upper surface and the side surface is different.

7 is a conceptual view of the light emitting device of FIG.

The light emitting device 100 of the embodiment includes a light emitting structure 150 disposed below the substrate 110 and a pair of electrode pads 171 and 172 disposed on one side of the light emitting structure 150.

The substrate 110 includes a conductive substrate or an insulating substrate. The substrate 110 may be a material suitable for semiconductor material growth or a carrier wafer. The substrate 110 may be formed of a material selected from the group consisting of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. The substrate 110 can be removed as needed.

A buffer layer (not shown) may be further provided between the first semiconductor layer 120 and the substrate 110. The buffer layer may mitigate the lattice mismatch between the substrate 110 and the light emitting structure 150 provided on the substrate 110.

The buffer layer may be a combination of Group III and Group V elements or may include any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The buffer layer may be doped with a dopant, but is not limited thereto.

The buffer layer can be grown as a single crystal on the substrate 110, and the buffer layer grown with a single crystal can improve the crystallinity of the first semiconductor layer 120.

The light emitting structure 150 includes a first semiconductor layer 120, an active layer 130, and a second semiconductor layer 140. In general, the light emitting structure 150 may be cut together with the substrate 110 to be separated into a plurality of light emitting structures 150.

The first semiconductor layer 120 may be formed of a compound semiconductor such as group III-V or II-VI, and the first semiconductor layer 120 may be doped with a first dopant. The first semiconductor layer 120 may be a semiconductor material having a composition formula of In _{x 1} Al _{y 1} Ga _{1 -x1-y1} N (0? _{X1? 1} , 0 _{? Y1? 1} , 0? X1 + y1? GaN, AlGaN, InGaN, InAlGaN, and the like. The first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first semiconductor layer 120 doped with the first dopant may be an n-type semiconductor layer.

The active layer 130 is a layer where electrons (or holes) injected through the first semiconductor layer 120 and holes (or electrons) injected through the second semiconductor layer 140 meet. As the electrons and the holes recombine, the active layer 130 transitions to a low energy level and can generate light having a wavelength corresponding thereto.

The active layer 130 may have any one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, Is not limited thereto.

The second semiconductor layer 140 is formed on the active layer 130 and may be formed of a compound semiconductor such as group III-V or II-VI group. The second semiconductor layer 140 may be doped with a second dopant . A second semiconductor layer 140 is a semiconductor material having a compositional formula of _{In x5 Al y2 Ga 1 -x5- y2} N (0≤x5≤1, 0≤y2≤1, 0≤x5 + y2≤1) or AlInN, AlGaAs , GaP, GaAs, GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second semiconductor layer 140 doped with the second dopant may be a p-type semiconductor layer.

An electron blocking layer (EBL) may be disposed between the active layer (130) and the second semiconductor layer (140). The electron blocking layer can block the flow of electrons supplied from the first semiconductor layer 120 to the second semiconductor layer 140 and increase the probability of recombination of electrons and holes in the active layer 130. [ The energy band gap of the electron blocking layer may be greater than the energy band gap of the active layer 130 and / or the second semiconductor layer 140.

The electron blocking layer may be formed of a semiconductor material having a composition formula of In _{x 1} Al _{y 1} Ga ₁ -x ₁ -y ₁ N (0? X _{1? 1} , 0? Y _{1? 1} , 0? X 1 + _{y 1? 1} ), for example, AlGaN, InGaN, InAlGaN, and the like, but is not limited thereto.

The light emitting structure 150 includes a through hole H formed in the second semiconductor layer 140 in the direction of the first semiconductor layer 120. The insulating layer 160 may be formed on the side surfaces of the light emitting structure 150 and the through holes H. [ At this time, the insulating layer 160 may expose one surface of the second semiconductor layer 140.

The electrode layer 141 may be disposed on one side of the second semiconductor layer 140. The electrode layer 141 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide , At least one of AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO And is not limited to these materials.

The electrode layer 141 may be formed of one of In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, , Ni, Cu, and WTi.

The first electrode pad 171 may be electrically connected to the first semiconductor layer 120. Specifically, the first electrode pad 171 may be electrically connected to the first semiconductor layer 120 through the through hole H. The first electrode pad 171 may be electrically connected to the first solder bump 181.

The second electrode pad 172 may be electrically connected to the second semiconductor layer 140. Specifically, the second electrode pad 172 may be electrically connected to the electrode layer 141 through the insulating layer 160. The second electrode pad 172 may be electrically connected to the second solder bump 182.

8A to 8C are flowcharts for explaining a method of manufacturing a light emitting device package according to an embodiment of the present invention.

The method of manufacturing a light emitting device package includes the steps of forming a second wavelength conversion layer 220 on a side surface of a plurality of light emitting devices 100 and forming a second wavelength conversion layer 220 on the top surface of the plurality of light emitting devices 100 and the second wavelength conversion layer 220 And forming the plurality of light emitting device packages 10 by cutting the second wavelength conversion layer 220. The first wavelength conversion layer 210 is formed on the first wavelength conversion layer 210,

Referring to FIG. 8A, in the step of forming the second wavelength conversion layer, a plurality of light emitting devices 100 are disposed on the adhesive tape 30 in a spaced manner. At this time, the adhesive tape may include methyl-based silicone. Phenyl-based silicon is relatively viscous.

Thereafter, the second wavelength conversion layer 220 may be formed by filling the polymer resin in which the second fluorescent material is dispersed between the plurality of light emitting devices 100 and curing the polymer resin. At this time, the polymer resin may be a phenyl-based silicone resin. In the case of methyl-based silicone, it is difficult to peel off the adhesive tape. At this time, a concavo-convex pattern may be formed on the upper surface of the second wavelength conversion layer 220 or light scattering particles may be sprayed as necessary.

Referring to FIG. 8B, the first wavelength conversion layer is formed by forming a first wavelength conversion layer 210 on the upper surface of the plurality of light emitting devices 100 and the second wavelength conversion layer 220. The first wavelength conversion layer 210 can be manufactured by filling a polymer resin in which the first phosphor is dispersed and curing the polymer resin.

At this time, the polymer resin constituting the first wavelength conversion layer 210 may include methyl-based silicone. Therefore, the hardness is low and the occurrence of cracks may be reduced. However, the present invention is not limited to this, and it may be manufactured by attaching a phosphor film.

Thereafter, the adhesive tape 30 can be peeled off. As described above, the adhesive tape 30 includes methyl-based silicon and the second wavelength conversion layer 220 includes phenyl-based silicon, so that it can be easily peeled off.

Referring to FIG. 8C, in the step of forming the light emitting device package, the plurality of light emitting device packages 10 may be manufactured by cutting the second wavelength conversion layer 220.

The light emitting device package of the embodiment further includes optical members such as a light guide plate, a prism sheet, and a diffusion sheet, and can function as a backlight unit. Further, the light emitting device package of the embodiment can be further applied to a display device, a lighting device, and a pointing device.

At this time, the display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

The reflector is disposed on the bottom cover, and the light emitting module emits light. The light guide plate is disposed in front of the reflection plate to guide light emitted from the light emitting module forward, and the optical sheet includes a prism sheet or the like and is disposed in front of the light guide plate. The display panel is disposed in front of the optical sheet, and the image signal output circuit supplies an image signal to the display panel, and the color filter is disposed in front of the display panel.

The lighting device may include a light source module including a substrate and a light emitting device of the embodiment, a heat dissipation unit that dissipates heat of the light source module, and a power supply unit that processes or converts an electric signal provided from the outside and provides the light source module . Further, the lighting device may include a lamp, a head lamp, or a street lamp or the like.

It will be apparent to those skilled in the art that various changes, substitutions, and alterations can be made hereto without departing from the spirit and scope of the invention as defined in the appended claims. Will be apparent to those of ordinary skill in the art.

100: Light emitting element
210: first wavelength conversion layer
220: second wavelength conversion layer

Claims (7)

A light emitting element;
A first wavelength conversion layer covering an upper surface of the light emitting device and including first wavelength conversion particles; And
And a second wavelength conversion layer covering a side surface of the light emitting device and including second wavelength conversion particles,
Wherein a refractive index of the first wavelength conversion layer is lower than a refractive index of the second wavelength conversion layer.
The method according to claim 1,
Wherein a hardness of the first wavelength conversion layer is lower than a hardness of the second wavelength conversion layer.
The method according to claim 1,
And a concavo-convex portion formed between the first wavelength conversion layer and the second wavelength conversion layer.
The method according to claim 1,
Wherein the content of the first wavelength conversion particles is larger than the content of the second wavelength conversion particles.
The method according to claim 1,
Wherein the first wavelength conversion layer comprises methyl-based silicon.
The method according to claim 1,
Wherein the light emitting element is a flip chip.
The method according to claim 1,
The light-
A light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer;
A first electrode pad electrically connected to the first semiconductor layer through the second semiconductor layer and the active layer at one side of the light emitting structure; And
And a second electrode pad electrically connected to the second semiconductor layer on one side of the light emitting structure.

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