WO2016150069A1

WO2016150069A1 - Chip scale packaging method and structure for light-emitting device

Info

Publication number: WO2016150069A1
Application number: PCT/CN2015/086438
Authority: WO
Inventors: 王良臣; 汪延明; 曹振林; 梁智勇; 许亚兵
Original assignee: 湘能华磊光电股份有限公司
Priority date: 2015-03-24
Filing date: 2015-08-09
Publication date: 2016-09-29
Also published as: CN104851961B; CN104851961A

Abstract

A chip scale packaging method for a light-emitting device, comprising the steps: arranging at least one of flip-chip light-emitting devices (1, 2, 3) on a conversion base membrane (30) at equal distances, main light-emitting surfaces of the flip-chip light-emitting devices (1, 2, 3) facing away from the conversion base membrane (30); forming surrounding dams (80) among the flip-chip light-emitting devices (1, 2, 3) on the conversion base membrane (3) and/or at the peripheries of the flip-chip light-emitting devices (1, 2, 3); separately coating a packaging adhesive (50) on the flip-chip light-emitting devices (1, 2, 3) and the conversion base membrane (30); when the packaging adhesive (5) is solidified until having no fluidity, removing the surrounding dams (80); after the packaging adhesive (50) is completely solidified, cutting the packaging adhesive (50); and removing the conversion base membrane (30), and obtaining a chip scale packaging structure after membrane pouring. Also disclosed is a chip scale packaging structure for a light-emitting device. Important significances in aspects of simplifying packaging technology steps of chips, saving submounts of the chips, reducing the cost, being more convenient for a user to increase the working efficiency, and the like are obtained.

Description

Chip-level packaging method and structure of light emitting device

Technical field

The present invention relates to the field of semiconductor packaging, and in particular to a chip scale packaging method and package structure of a light emitting device.

Background technique

From the development of the LED package form, the early bullet-type package was the main one. With the market demand, different forms of packaged brackets have appeared one after another. For example, Suface-mount devices (SMD), which are the most commonly used on the market, and high-power integrated package types.

The LED chips used in these packages are basically a formal structure, and the packaging process involves solid crystal bonding, wire bonding, and dispensing in the holder. It is then attached to the carrier of the luminaire as a carrier. From the perspective of heat dissipation, the thermal resistance of the system from the chip and the bracket to the lamp carrier is large, which affects the light efficiency and light decay of the LED.

The emergence of a new flip-chip LED (Flip-chip LED) directly solders the P and N electrode pads of the flip-chip LED chip to the carrier of the lamp. In this way, the thermal resistance caused by the sapphire substrate in the LED of the formal structure is reduced, the bracket and the solid crystal solder are omitted, the thermal resistance of the system is further reduced, the reliability of the LED and the bearing capacity under the use of a large current are improved. From an optical point of view, this package reduces the optical loss caused by multiple reflections of light from the reflector cup in the traditional package architecture, and has a larger illumination angle, which provides a larger backlight for the LCD industry. Flexible design space. Therefore, compared with the packaged chip, the flip chip has obvious advantages in high current use, reducing production links and reducing costs.

At present, the chip-level package of flip-chip LED chips is formed by flip-chip mounting on a small-sized submount after the LED chip is completed, and then covering the package or phosphor paste. A flip-chip LED chip with a support substrate is cut and cut, that is, a so-called chip scale package (CSP), such as a flip chip LED chip disclosed in US Pat. No. 8,232,564 B2 to Cree. This packaging method requires an additional support substrate, which increases the manufacturing process and cost, and also increases the thermal resistance, which is not conducive to heat dissipation of the chip; The support substrate also increases the volume of the packaged chip, which is disadvantageous for miniaturization of the product.

Another way is to apply encapsulation or fluorescent glue on the sapphire surface and four sides of the flip-chip LED chip, chip-level package without support substrate, obviously, its process, cost, thermal resistance, etc. are better than the former one. .

However, how to realize the unsupported substrate and only encapsulate the light emitting device, and how to solve the problem of adhesion between the fluorescent glue or the encapsulant and the sapphire substrate without affecting the reliability of the chip has become an urgent problem to be solved. problem.

Summary of the invention

In order to solve the above technical problem, the present invention discloses a chip-level packaging method for a light emitting device, including:

Aligning at least one flip-chip light emitting device equidistantly on the conversion base film, the main light-emitting surface of the flip-chip light-emitting device facing away from the conversion base film, wherein the conversion base film is a conversion of a surface having a certain viscosity and a high temperature resistant material a base film for adhering the flip-chip light emitting device;

Forming a dam between and/or around the flip-chip light-emitting devices on the conversion substrate;

Applying an encapsulant on the flip-chip light-emitting device and the conversion base film, respectively, the encapsulant being one of a photocurable adhesive, a thermosetting adhesive or a combination of a thermal curing and a photocuring;

Removing the dam when the encapsulant is cured to no fluidity;

Cutting the encapsulant after the encapsulant is completely cured;

The conversion base film is removed, and the chip-level package structure is obtained after the film is inverted.

Preferably, the material of the dam is a plastic film or a light sensitive glue.

Preferably, the encapsulant is further a silicone type encapsulant or a resin type encapsulant, wherein

When the encapsulant is a silicone type encapsulant or a resin type encapsulant, the conversion base film has a viscosity of between 1 and 100 gf / 25 mm.

Preferably, the conversion base film is a blue film, a white film or a UV film.

Preferably, when the conversion base film is a UV film, the conversion base film has a viscosity of between 1 and 100 gf / 25 mm after being irradiated with ultraviolet light.

Preferably, the main light-emitting surface of the flip-chip light-emitting device is covered with a dielectric film connecting the encapsulant and the main light-emitting surface.

Preferably, the dielectric film has a transmittance of 70% or more and a thickness of 50 nm to 200 nm, and the dielectric film is composed of an oxide or a nitride.

Preferably, after the encapsulation is cut, the thickness of the encapsulant above the flip-chip device is d=(wr)/2, where w is the distance between the flip-chip devices, and r is a cutter width.

The present invention also discloses a chip scale package structure fabricated by the chip scale packaging method of the light emitting device according to any of the above.

Compared with the prior art, the chip-level packaging method and structure of the light-emitting device described in the present application achieve the following effects:

1) The invention adopts a plastic film as a conversion base film for supporting and arranging chips, directly encapsulating the chip, greatly simplifying the packaging process steps of the chip, and saving the material cost required for transferring the chip to other support substrates, and reducing the chip package. Cost is of great importance, in addition to solving the problem of adhesion between fluorescent glue or encapsulant and sapphire substrate;

2) Compared with the prior art, the invention saves the chip supporting substrate or the bracket which is usually used in packaging, and only encapsulates the light emitting device, reduces the thermal resistance of the system, and improves the overload capability of the light emitting device;

3) Compared with the prior art, it not only simplifies the process but also miniaturizes the product, reduces the cost, facilitates the end user, improves the production efficiency, and broadens the application range;

4) Since the dam is installed, the height of the encapsulant is limited. After cutting, the thickness of the encapsulant around the chip-scale package structure is uniform, so that the light emitted by the illuminating device and the phosphor-converted light are mixed in all directions. Uniform light ensures uniform color temperature.

The invention has great significance in greatly simplifying the packaging process steps of the chip, saving the supporting substrate of the chip, reducing the cost and more convenient for the user to improve the work efficiency.

DRAWINGS

The drawings described herein are intended to provide a further understanding of the invention, and are intended to be a part of the invention. In the drawing:

1 is a cross-sectional view of the flip-chip light emitting device array according to

Embodiments

1 and 2 on a conversion base film;

2A and 2B are cross-sectional views showing the flip-chip light emitting device array coated with a transparent encapsulant and an encapsulant mixed with a luminescence conversion material, respectively;

3 is a schematic view showing a cutting position of the flip-chip light emitting device array after applying the encapsulant according to the first embodiment;

4 is a cross-sectional view showing a chip scale package structure in which a dicing cut is performed and a conversion base film is removed;

5 is a cross-sectional view showing a structure in which the chip scale package structure is flipped on a support substrate;

Figure 6 is a schematic view showing the formation of a dam around the chip according to the third embodiment of the present invention;

7A and 7B are plan views of the chip and the dam shown in Fig. 6, respectively;

8A and 8B are cross-sectional views of a flip-chip light-emitting device array having a dam surrounding, coated with a transparent encapsulant and an encapsulant mixed with a luminescence conversion material;

9 is a schematic view showing the formation of a dielectric film on a light-emitting device substrate as described in Embodiment 4;

FIG. 10 is a flow chart of a chip scale packaging method of the light emitting device according to the first embodiment.

detailed description

Certain terms are used throughout the description and claims to refer to particular components. Those skilled in the art will appreciate that hardware manufacturers may refer to the same component by different nouns. The present specification and the claims do not use the difference in the name as the means for distinguishing the components, but the difference in function of the components as the criterion for distinguishing. The word "comprising" as used throughout the specification and claims is an open term and should be interpreted as "including but not limited to". "Substantially" means that within the range of acceptable errors, those skilled in the art will be able to solve the technical problems within a certain error range, substantially achieving the technical effects. In addition, the term "coupled" is used herein to include any direct and indirect electrical coupling means. Therefore, if a first device is coupled to a second device, the first device can be directly electrically coupled to the second device, or electrically coupled indirectly through other devices or coupling means. Connected to the second device. The description of the specification is intended to be illustrative of the preferred embodiments of the invention. The scope of protection of the application is subject to the definition of the appended claims.

In addition, the present specification does not limit the components and method steps disclosed in the claims to the components and method steps of the embodiments. In particular, the dimensions, materials, shapes, structural order, adjacent sequence, and manufacturing method of the structural members described in the embodiments are merely illustrative examples, and the scope of the present invention is not limited thereto. . The size and positional relationship of the structural components shown in the drawings are shown enlarged for the sake of clarity.

The present application is further described in detail below with reference to the accompanying drawings, but is not to be construed as limiting.

Embodiment 1:

As shown in FIG. 10, a chip-level packaging method for a light-emitting device according to the embodiment is provided for a package of a light-emitting device that does not need to be converted into white light, and includes the steps of:

Step 101: Arranging at least one flip-chip light emitting device equidistantly on the conversion base film, the main light-emitting surface of the flip-chip light-emitting device facing away from the conversion base film, wherein the surface of the conversion base film has a certain viscosity and is resistant The high temperature is used to adhere the flip-chip light-emitting device; the equidistance in the present invention means that the arrangement distances of the plurality of flip-chip light-emitting devices in the x-axis and y-axis directions are equal. Here, the conversion base film needs to be resistant to at least 150 ° C, depending on the nature of the conversion base film. Step 102: forming a dam between and/or around the flip-chip light-emitting devices on the conversion base film; the advantage of providing the dam in step 102 is to control the thickness of the encapsulant, and when applying the encapsulant, according to Set the height of the dam to add the encapsulant and make the glue more uniform. The flip-chip light emitting device of the present invention is a light emitting device at a certain wavelength band.

Step 103: coating a package adhesive on the flip-chip light-emitting device and the conversion base film, respectively, the package adhesive being a photo-curable encapsulant, a thermo-curing encapsulant or a photo-curing and heat-curing encapsulant;

Step 104: removing the dam when the encapsulant is cured to no fluidity;

Step 105: After the encapsulant is cured, the encapsulant is subsequently cut;

Step 106: The conversion base film is removed, and a chip-scale structure is obtained after the film is poured.

The light-emitting device of the present invention comprises a semiconductor device having a light-emitting active region, such as a light-emitting diode (LED), on which the electrode or lead is not required to be drawn out from the main light-emitting surface. The light-emitting wavelength of the semiconductor device is not limited to blue light, and may also include the entire visible light band, the ultraviolet and infrared wavelength bands, or a mixed light composed of light of the aforementioned wavelength band. In this embodiment, a chip-scale packaging method and a package structure of the present invention are illustrated by taking a light-emitting diode as an example.

The flip-chip LED chip (ie, flip-chip light emitting device) includes a substrate 10, a first semiconductor layer 11, an active region 12, and a second semiconductor layer 13, respectively, a second electrode 14 and a first electrode 15 and a second semiconductor layer 13 is electrically connected to the first semiconductor layer 11. The first semiconductor layer 11 and the second semiconductor layer 13 have opposite conductivity types. The first electrode 15 and the second electrode 14 may comprise a plurality of layers or a single layer comprising a conductive material layer having a high reflectance, such as a conductive layer composed of a high reflectivity metal such as Ag, Ru, Al, or the like, or a high transmission conductive The composite optical film composed of a film and a highly reflective multilayer dielectric film does not specifically limit the structure of the flip-chip light-emitting device according to the actual situation.

Preferably, the conversion base film is a blue film, a white film or a UV film. When the conversion base film is a UV film, the conversion base film has a viscosity after irradiation with ultraviolet light of between 1 and 100 gf / 25 mm, preferably between 20 and 80 gf / 25 mm.

The encapsulant is further a silicone type encapsulant or a resin type encapsulant, wherein

Preferably, the material of the dam is a plastic film or a light sensitive glue. The dam in this embodiment is a grid-like or square-shaped plastic film. Here, the height of the dam is equal to the height of the encapsulating glue after cutting, that is, the height of the dam is equal to the distance between the flip-chip illuminating devices minus the thickness of the dicing blade and then divided by 2, that is, the height of the dam is arranged after the flip-chip illuminating device is arranged Can be calculated.

In addition, a dielectric film connecting the encapsulant and the main light-emitting surface may be covered on the main light-emitting surface of the flip-chip light-emitting device for improving the adhesion of the encapsulant to the main light-emitting surface. The transmittance of the film is 70% or more.

Preferably, the dielectric film is further composed of an oxide or a nitride, and the dielectric film described herein is an oxide or nitride having better adhesion to the encapsulant. In the present embodiment, the dielectric film is a dielectric film of silicon oxide, and the thickness is preferably between 50 nm and 200 nm.

In step 103, after the encapsulating glue is cut, the thickness of the encapsulant above the flip-chip device is d=(wr)/2, where w is the distance between the flip-chip devices, and r is the cutting. The width of the knife can be seen from Figure 3. The thickness of the encapsulant after cutting is approximately equal to the thickness of the four weeks after the separation. Since the flip-chip light-emitting device of the present invention is equidistantly arranged in the x-axis and y-axis directions, w is uniform in both the x-axis and y-axis directions. After cutting, the thickness of the encapsulant around the chip-scale package structure is uniform, so that the light emitted by the LED chip and the phosphor-converted light are uniformly mixed in all directions to ensure uniformity of color temperature.

The present invention also provides a chip scale package structure fabricated by the chip scale packaging method of any of the above light emitting devices, and FIG. 4 is a cross-sectional view of the chip scale package structure obtained according to the above method, and the conversion base film 30 is taken from the LED chip. After the surface is separated, the surfaces of the first electrode 15 and the second electrode 14 are exposed. 5 is a cross-sectional view showing the structure in which the chip scale package structure of FIG. 4 is flipped on a support substrate. The chip scale package structure is mounted in a circuit board or bracket 70. The first electrode 15 and the second electrode 14 of the chip scale package structure are soldered, bonded, or the like to the corresponding electrode pads 71 on the circuit board or the bracket 70. Fixed and electrically connected to 72.

Embodiment 2:

Based on the first embodiment, the present invention will be described in detail with reference to FIGS. 1 to 5 and FIG.

The LED chip of the flip-chip structure includes a substrate 10, a first semiconductor layer 11, an active region 12, and a second semiconductor layer 13, the second electrode 14 and the first electrode 15 and the second semiconductor layer 13 and the first semiconductor layer 11, respectively Electrical connection. The first semiconductor layer 11 and the second semiconductor layer 13 have opposite conductivity types. The first electrode 15 and the second electrode 14 may comprise a plurality of layers or a single layer comprising a conductive material layer having a high reflectance, such as a conductive layer composed of a high reflectivity metal such as Ag, Ru, Al, or the like, or a high transmission conductive A composite optical film composed of a film and a highly reflective multilayer dielectric film.

A plurality of flip-chip LED

structure LED chips

1, 2, 3 are arranged at a certain interval 20 on the transition base film 30 which functions as a transition. Only three flip-chip LED chips are shown in FIG. Any one, for example, in order to increase the yield and reduce the cost, the

LED chips

1, 2, 3 can fill the entire conversion base film 30. The conversion base film 30 may be a surface viscous plastic film, that is, a blue film, a white film, or a UV film for performing chip dicing; the conversion base film 30 has the following characteristics: moderate viscosity, high temperature resistance, at 180 The film thickness is several tens of micrometers or more than 100 micrometers; the conversion base film 30 is easy to realize the filming of the chip, that is, the chip is easily flipped to another blue film or white with higher viscosity. On the film; after the conversion base film 30 is coated with a phosphor-containing encapsulant (referred to as a fluorescent glue) on its viscous side, the fluorescent glue can be cured. Of course, the conversion base film 30 herein may also be a high-temperature ultraviolet film having a moderate viscosity after irradiation with ultraviolet light having the above characteristics, which is not specifically limited in the present invention.

As shown in FIGS. 2A and 2B, an encapsulant 50 is applied to the conversion base film 30 and the

LED chips

1, 2, 3, or an encapsulant 50 in which a conversion material 55 of a certain wavelength band is mixed is applied. The encapsulant may be a high optical and physical property gel that is photocured or thermally cured, and may be of a silicone type or a resin type. When the silicone type encapsulant is used, the viscosity of the conversion base film 30 is between 1 and 100 gf / 25 mm; if the conversion base film 30 is a UV film, the viscosity of the film after UV irradiation is between 1 and 100 gf / 25 mm. Preferably, it is between 20-80 gf / 25 mm. When a resin type encapsulant is used, the viscosity of the conversion base film 30 is also between 1 and 100 gf / 25 mm. The curing properties of the silicone type encapsulant may be affected by the adhesion layer on the conversion base film 30, that is, it is difficult to cure after being "poisoned" by the adhesion layer. Therefore, the above requirements are imposed on the conversion base film 30. In summary, the composition of the conversion base film and the amount of the viscous material in the present invention do not cause the encapsulant to fail to cure.

The invention adopts a plastic film as a conversion base film for supporting and arranging chips, directly encapsulating the chip, greatly simplifying the packaging process steps of the chip, and saving the material cost required for transferring the chip to other supporting substrates, thereby reducing the cost of the chip packaging. Significance.

After curing, the cut is cut in the direction of the arrow shown in FIG. The thickness D of the encapsulant 50 above the

LED chips

1, 2, 3 is substantially equivalent to the thickness (about (wr)/2) of the periphery of the encapsulation 50, so that the light emitted by the LED chip 1-3 and the phosphor 55 are converted. The rear light is uniformly mixed in all directions to ensure uniformity of color temperature, w is the pitch of the LED chips 1 to 3 along the x and y directions on the conversion base film 30, and r is the thickness of the dicing blade. The control of the color temperature is determined by the ratio of the gel to the phosphor and the thickness of the final encapsulant, and is not specifically limited herein.

The encapsulant 50 used has a suitable hardness after curing on the conversion base film 30, and has a hardness of not less than 70 shore. It is easy to cut by mechanical methods, does not collapse, and has the quality requirements of the current general-purpose LED encapsulant. In addition, the encapsulant here has in particular solder heat resistance, and the applied film is not peeled off.

The chip-level package structure is obtained by the above method, and FIG. 4 is a chip-scale package structure that completes the cutting and separation after packaging. The conversion base film 30 is separated from the surfaces of the

LED chips

1, 2, 3, exposing the surfaces of the first electrode 15 and the second electrode 14.

As shown in FIG. 5, the chip scale package structure is mounted in a circuit board or bracket 70, and the first electrode 15 and the second electrode 14 of the chip scale package structure are soldered, bonded, or the like to the circuit board or the bracket 70. The corresponding

electrode pads

71 and 72 are fixed and electrically connected.

Embodiment 3:

On the basis of the first and second embodiments, in conjunction with FIG. 6 to FIG. 8B, another embodiment is provided:

As shown in FIG. 6, on the basis of the second embodiment, a dam is formed between and/or around the flip-chip light-emitting devices on the conversion base film.

Specifically, after the plurality of flip-chip LED

structure LED chips

1, 2, 3 are arranged on the conversion base film 30 at a certain interval 20, a "dam" 80 is formed around the LED chips 1-3. The dam 80 may be formed by filming or the like, and may be a large dam 80 (as shown in FIG. 7A) or a plurality of grids (as shown in FIG. 7B) distributed only around all chips or a part of the chips. Structure, but requires the dam 80 to be uniform in height.

The formulated encapsulant 50 is evenly coated in the dam and is guaranteed to be free of air bubbles. The encapsulant 50 coated on and around the LED chips 1-3 is separated by the dam 80. Height of the dam 80 The thickness exceeds the thickness of the LED chip 1, so that when the LED chip 1 is packaged with the encapsulant 50, the thickness of the encapsulant over the LED chip 1 is equivalent to the thickness of the sidewall, as shown in FIG. 8A, so that the entire chip is along each of the light emitting surfaces. The emitted light is mild and/or uniform in brightness. The curing of the glue is combined with thermal curing and ultraviolet curing to ensure a certain hardness and toughness after curing, which is convenient for cutting.

As shown in FIG. 8B, a wavelength converting material 55 such as a phosphor may be mixed in the encapsulant 50.

After the package adhesive 50 is moderately cured, the dam 80 is removed, and the curing conditions are adjusted twice according to the hardness and toughness of the package adhesive 50, and then the film is cut and cut to form a single chip scale package structure.

The dam 80 is used to prevent the encapsulating glue from intruding between the chip and the conversion base film, and contaminating the electrode layer on the surface of the chip.

Embodiment 4:

On the basis of the chip-level packaging method provided in the first embodiment to the third embodiment, in this embodiment, in order to increase the adhesion between the encapsulant 50 and the surface of the substrate 10, a layer is further formed on the surface of the substrate 10. A dielectric film 16 having a high transmittance for visible light is shown in FIG. The dielectric film 16 is composed of silicon oxide or the like and has good adhesion to both the encapsulant 50 and the substrate 10. The thickness of the dielectric film 16 is such that it has a transmittance of at least 70% or more for visible light, preferably 90% or more. Thickness in a few

It is between several micrometers, preferably in the range of 50 nm to 200 nm. The dielectric film 16 may be a single layer film or a multilayer film, and may be formed by vapor deposition, sputtering, or spin coating.

Compared with the prior art, the chip-level packaging method and structure of the light-emitting device of the present invention achieve the following effects:

2) Compared with the prior art, the present invention eliminates the chip supporting substrate or the bracket which is usually used in packaging, and only encapsulates the light emitting device, thereby reducing the thermal resistance of the system;

4) Because the dam is installed, the height of the encapsulant is limited. After cutting, the thickness of the encapsulant around the chip-scale package structure is uniform, so that the light emitted by the LED chip and the phosphor-converted light are The light is evenly mixed in all directions to ensure uniformity of color temperature.

The method of the present invention has been described in detail in the method section, and the description of the corresponding parts of the structure and method involved in the embodiment is omitted here, and will not be described again. For the description of the specific content in the structure, reference may be made to the content of the method embodiment, which is not specifically limited herein.

The above description shows and describes several preferred embodiments of the present application, but as described above, it should be understood that the application is not limited to the forms disclosed herein, and should not be construed as Other combinations, modifications, and environments are possible and can be modified by the above teachings or related art or knowledge within the scope of the application concept described herein. All changes and modifications made by those skilled in the art are intended to be within the scope of the appended claims.

Claims

A chip scale packaging method for a light emitting device, comprising:

Arranging at least one flip-chip light emitting device equidistantly on the conversion base film, the main light-emitting surface of the flip-chip light-emitting device facing away from the conversion base film, wherein the surface of the conversion base film has a certain viscosity and high temperature resistance, Adhering to the flip-chip light emitting device;

Forming a dam between and/or around the flip-chip light-emitting devices on the conversion substrate;

Applying an encapsulant on the flip-chip light-emitting device and the conversion base film, respectively, the encapsulant being one of a photocurable adhesive, a thermosetting adhesive or a combination of a thermal curing and a photocuring;

Removing the dam when the encapsulant is cured to no fluidity;

Cutting the encapsulant after the encapsulant is completely cured;

The conversion base film is removed, and the chip-level package structure is obtained after the film is inverted.
The chip scale packaging method of a light emitting device according to claim 1, wherein the material of the dam is a plastic film or a light sensitive glue.
The chip-level packaging method of the light-emitting device according to claim 1, wherein the encapsulant is further a silicone-type encapsulant or a resin-type encapsulant, wherein

When the encapsulant is a silicone type encapsulant or a resin type encapsulant, the conversion base film has a viscosity of between 1 and 100 gf / 25 mm.
The chip scale packaging method of a light emitting device according to claim 1, wherein the conversion base film is a blue film, a white film or a UV film.
The chip scale packaging method of a light-emitting device according to claim 4, wherein when the conversion base film is a UV film, the conversion base film has a viscosity of between 1 and 100 gf/25 mm after being irradiated with ultraviolet light.
The chip-level packaging method of a light-emitting device according to claim 1, wherein the main light-emitting surface of the flip-chip light-emitting device is covered with a dielectric film connecting the encapsulant and the main light-emitting surface.
The chip scale packaging method of a light-emitting device according to claim 6, wherein the dielectric film has a transmittance of 70% or more and a thickness of 50 nm to 200 nm, and the dielectric film is composed of an oxide or a nitride.
The chip-level packaging method of the light emitting device according to claim 1, wherein after the encapsulating the encapsulant, the thickness of the encapsulant above the flip-chip device is d=(wr)/2, wherein w is The distance between the flip-chip light emitting devices, r is the cutter width.
A chip scale package structure produced by the chip scale packaging method of the light emitting device according to any one of claims 1 to 8.