CN203850334U - High-power LED package structure - Google Patents
High-power LED package structure Download PDFInfo
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- CN203850334U CN203850334U CN201420070908.5U CN201420070908U CN203850334U CN 203850334 U CN203850334 U CN 203850334U CN 201420070908 U CN201420070908 U CN 201420070908U CN 203850334 U CN203850334 U CN 203850334U
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- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000011521 glass Substances 0.000 claims abstract description 36
- 230000005496 eutectics Effects 0.000 claims abstract description 21
- 238000004806 packaging method and process Methods 0.000 claims abstract description 19
- 238000005538 encapsulation Methods 0.000 claims description 32
- 238000010276 construction Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 229910017083 AlN Inorganic materials 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000002844 melting Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- Led Device Packages (AREA)
Abstract
The utility model discloses a high-power LED package structure comprising a substrate and an LED chip. A cofferdam area is arranged around the substrate. The LED chip is fixed on the substrate in a eutectic manner. The LED chip is packaged with a glass package layer. The LED chip is a flip chip. The front of the substrate is provided with a positive electrode area and a negative electrode area. The positive electrode of the LED chip is fixed on the positive electrode area in a eutectic manner, and the negative electrode of the LED chip is fixed on the negative electrode area in a eutectic manner. The back of the substrate is provided with a positive electrode pad and a negative electrode pad, and is further provided with a first via hole used for connecting the positive electrode area and the positive electrode pad and a second via hole used for connecting the negative electrode area and the negative electrode pad. The high-power LED package structure of the utility model is simple in structure, easy to implement and high in production efficiency, adopts a package structure in which the LED chip is fixed in a eutectic manner and is combined with the glass package layer, can work at high current and high power, has high stability, is suitable for packaging high-power LED products, and can be widely used in the field of LED package.
Description
Technical field
The utility model relates to LED encapsulation field, particularly relates to a kind of high-power LED encapsulation construction.
Background technology
LED is because the features such as its volume is little, light efficiency is high and the life-span is long are widely used, and LED encapsulation is at present especially progressively toward the high-power future development of small size.At present, packaged LED is generally to adopt silica gel to carry out seal protection to LED chip, and concerning high-capacity LED, silica gel is high temperature resistant and resistance to UV poor performance, and along with the growth of service time, high-capacity LED there will be degradation phenomena, thereby reduces the life-span of high-capacity LED.The LED product of existing employing ceramic substrate encapsulation, due to the restriction of silica gel packaging, its stability and reliability are restricted, operating current is generally 350mA, be difficult to realize the above operating current of 1A, cannot realize high power, and the LED product of ceramic substrate encapsulation at present adopts a lens moulding of model more, this encapsulating structure at every turn can only 1 ~ 2 ceramic substrate of model, then toast glue to completion of cure, then cut, encapsulation process is loaded down with trivial details, length consuming time, production efficiency is low.
Utility model content
In order to solve above-mentioned technical problem, the purpose of this utility model is to provide a kind of high-power LED encapsulation construction.
The utility model solves the technical scheme that its technical problem adopts:
A kind of high-power LED encapsulation construction, comprises substrate and LED chip, and described substrate peripheral is provided with cofferdam district, and described LED chip is fixed on substrate by eutectic mode, and described LED chip outer enclosure has glass packaging layer.
Further, described glass packaging floor is to adopt low-melting glass sheet to be placed in the district of cofferdam to soften afterwards by formed in mould.
Further, described low-melting glass sheet inside is doped with fluorescent material.
Further, described glass packaging layer be shaped as planar structure, convex lens structures or concave structure.
Further, described LED chip adopts flip-chip, described substrate front side is provided with positive polar region and negative pole district, the positive pole of described LED chip is fixed on positive polar region by eutectic mode, the negative pole of described LED chip is fixed in negative pole district by eutectic mode, described substrate back is provided with positive terminal pad and negative terminal pad, and described substrate is provided with the first via that positive polar region is connected with positive terminal pad and the second via that negative pole district is connected with negative terminal pad.
Further, the material of described substrate is aluminium nitride, carborundum, aluminium silicon carbide, metallic copper or graphite.
The beneficial effects of the utility model are: a kind of high-power LED encapsulation construction of the present utility model, comprise substrate and LED chip, described substrate peripheral is provided with cofferdam district, described LED chip is fixed on substrate by eutectic mode, described LED chip outer enclosure has glass packaging layer, this encapsulating structure simple in structure, be easy to realize and production efficiency high, and the encapsulating structure of employing eutectic mode fixed L ED chips incorporate glass packaging layer, can realize large electric current high-power operation, and stability is high, be suitable for encapsulating high-capacity LED product.
Brief description of the drawings
Below in conjunction with drawings and Examples, the utility model is described in further detail.
Fig. 1 is the structural representation of a kind of high-power LED encapsulation construction of the present utility model;
Fig. 2 is the cross section structure figure that adopts die package a kind of high-power LED encapsulation construction of the present utility model;
Fig. 3 is the vertical section structure figure that adopts die package a kind of high-power LED encapsulation construction of the present utility model;
Fig. 4 is the vertical view that adopts die package a kind of high-power LED encapsulation construction of the present utility model;
Fig. 5 is the sectional structure chart of the single package unit of a kind of high-power LED encapsulation construction of the present utility model.
Embodiment
With reference to Fig. 1, the utility model provides a kind of high-power LED encapsulation construction, comprises substrate 1 and LED chip 3, and described substrate 1 periphery is provided with cofferdam district 2, described LED chip 3 is fixed on substrate 1 by eutectic mode, and described LED chip 3 outer enclosure have glass packaging layer 4.
Be further used as preferred embodiment, with reference to Fig. 2, Fig. 3 and Fig. 4, described glass packaging floor 4 is to adopt low-melting glass sheet to be placed in cofferdam district 2 to soften and pass through afterwards mould 5 moulding.
Be further used as preferred embodiment, described low-melting glass sheet inside is doped with fluorescent material.
Be further used as preferred embodiment, described glass packaging layer 4 be shaped as planar structure, convex lens structures or concave structure.
Be further used as preferred embodiment, with reference to Fig. 5, described LED chip 3 adopts flip-chip, described substrate 1 front is provided with positive polar region 71 and negative pole district 72, the positive pole of described LED chip 3 is fixed on positive polar region 71 by eutectic mode, the negative pole of described LED chip 3 is fixed in negative pole district 72 by eutectic mode, described substrate 1 back side is provided with positive terminal pad 91 and negative terminal pad 92, and described substrate 1 is provided with the first via 61 that positive polar region 71 is connected with positive terminal pad 91 and the second via 62 that negative pole district 72 is connected with negative terminal pad 92.
Be further used as preferred embodiment, the material of described substrate 1 is aluminium nitride, carborundum, aluminium silicon carbide, metallic copper or graphite.
Below in conjunction with embodiment, the utility model is described further.
Referring to figs. 1 through Fig. 5, a kind of high-power LED encapsulation construction, comprises substrate 1 and LED chip 3, and substrate 1 periphery is provided with cofferdam district 2, and LED chip 3 is fixed on substrate 1 by eutectic mode, and LED chip 3 outer enclosure have glass packaging layer 4.Glass packaging layer 4 be shaped as planar structure, convex lens structures or concave structure.Substrate 1 adopts the high thermal conductive substrate of surface level, and without groove or buckle etc. are set, this encapsulating structure is easy to realize.
Glass packaging floor 4 is to adopt low-melting glass sheet to be placed in cofferdam district 2 to soften rear mould 5 moulding of passing through, and low-melting glass sheet inside can be selected doped with fluorescent material or the fluorescent material that undopes according to actual needs.Adopt low-melting glass sheet to be placed in cofferdam district 2 and soften rear mould 5 moulding of passing through, substitute glass powder with low melting point cast of the prior art or compression molding, packaging technology is simple and easy to realize, and production efficiency is high.
Because glass packaging layer 4 is than the Heat stability is good of silica gel packaging, and eutectic mode can be born larger operating current, therefore this encapsulating structure adopts eutectic mode fixed L ED chip 3 packaged types in conjunction with glass packaging layer 4, can realize large current work is high-power operation, and stability is high, therefore can be for encapsulation high-capacity LED product.
This encapsulating structure is used for encapsulating multiple LED chips 3, can be packaged into a LED illuminating module, can be also to be first packaged into after an encapsulation unit matrix at monoblock substrate 1, is divided into multiple independent LED encapsulation units or multiple LED encapsulation module by cutting.This encapsulating structure is preferred for multiple LED chips to be packaged into after encapsulation unit matrix, cut into again the situation of multiple independently LED encapsulation units, be that multiple LED chips 3 are fixed on by eutectic mode the encapsulation unit matrix that on substrate 1, formation is made up of multiple encapsulation units, then cut the multiple independently encapsulation units of rear acquisition, compare current encapsulating structure, the production efficiency of this encapsulating structure is higher.Cofferdam district 2 is mainly used in auxiliary packaged glass encapsulated layer 4, in the encapsulation unit obtaining, does not comprise cofferdam district 2 after general cutting.
Fig. 5 is the sectional structure chart of single led encapsulation unit, LED chip 3 adopts flip-chip, substrate 1 front is provided with positive polar region 71 and negative pole district 72, the positive pole of LED chip 3 is fixed on positive polar region 71 by eutectic mode, the negative pole of LED chip 3 is fixed in negative pole district 72 by eutectic mode, substrate 1 back side is provided with positive terminal pad 91 and negative terminal pad 92, and substrate 1 is provided with the first via 61 that positive polar region 71 is connected with positive terminal pad 91 and the second via 62 that negative pole district 72 is connected with negative terminal pad 92.Shown in Figure 5, the first via 61 and the second via 62 inwalls are provided with insulating barrier, and at the middle metal conduction layer (being the trellis dash area in two vias in Fig. 5) that is provided with of insulating barrier, thereby corresponding positive polar region 71 is connected with positive terminal pad 91, or negative pole district 72 is connected with negative terminal pad 92.Substrate 1 below is also provided with heat sink, thus better heat-radiation effect.
The material of substrate 1 is aluminium nitride, carborundum, aluminium silicon carbide, metallic copper or graphite.
The encapsulation process of this encapsulating structure is as follows: substrate 1 use fixture is fixed, put into the automatic integratedization equipment of vacuum environment, this equipment meets the following conditions: have level(l)ing device, accurate navigation system, can maintain vacuum or atmospheric gas pressure environment, four～five sections of independent temperature control districts, are divided into preheating zone, softened zone, cooling zone.Fixture is placed on level(l)ing device, remain that substrate 1 is in level, the low-melting glass sheet that carries out in advance a slice after surface treatment a certain size and thickness is put into cofferdam district by the navigation system of equipment, contact with the top of LED chip 3, the matched in the thickness of low-melting glass sheet and cofferdam district 2, size is close with cofferdam district 2.Automatically the fixture that is fixed on level(l)ing device to be transported to successively to temperature be that the preheating zone of 100～150 DEG C and temperature are the constant temperature softened zone of 300～350 DEG C to equipment afterwards, general transfer rate control is 0.8～1m/min, after constant temperature softened zone insulation 1～2 h, low-melting glass sheet contact surface softening and fully wetting and substrate 1, the thermal coefficient of expansion of low-melting glass sheet and substrate 1 is close, is 8 ~ 12 × 10
-6/ DEG C, therefore can ensure that the bonding force of low-melting glass sheet and substrate is good.As Fig. 4, mould 5 is accurately placed on substrate 1 behind location at leisure, keep 10-20min, the glass after making mould 5 inner surfaces and softening fully contacts, and should be noted, mould 5 inner surfaces are in advance through processing, except the upper surface of mould 5, all spray the glass release agent that one deck can resistance to 1200 DEG C of high temperature, be convenient to after the glass solidification after softening, mould 5 be taken off, and mould 5 inner surfaces keep smooth by processing, ensure that the smooth surface of the glass packaging layer 4 obtaining after the demoulding is smooth.Placing after mould 5, by level(l)ing device, mould 5 being transported to temperature is that the constant temperature cooling zone of 220～270 DEG C is incubated 0.5～1 h, thereby reduce the stress producing when low-melting glass solidifies, and then to be transported to temperature be to be incubated 0.5～1 h in the constant temperature cooling zone of 100～150 DEG C, further reduce stress, finally at room temperature cooling, mold removal 5.Fig. 2 and Fig. 3 are respectively cross section and the vertical section structure figure of substrate 1 and mould 5, and mould 5 inner surfaces are lower than the height in cofferdam district 2, and the degree of depth of mould 5 requires to determine according to the height in cofferdam district 2 and the desired colour temperature of this encapsulating structure and bright dipping.
More than that better enforcement of the present utility model is illustrated, but the invention is not limited to embodiment, those of ordinary skill in the art also can make all equivalent variations or replacement under the prerequisite without prejudice to the utility model spirit, and the modification that these are equal to or replacement are all included in the application's claim limited range.
Claims (3)
1. a high-power LED encapsulation construction, it is characterized in that, comprise substrate (1) and LED chip (3), described substrate (1) periphery is provided with cofferdam district (2), it is upper that described LED chip (3) is fixed on substrate (1) by eutectic mode, and described LED chip (3) outer enclosure has glass packaging layer (4);
Described LED chip (3) adopts flip-chip, described substrate (1) front is provided with positive polar region (71) and negative pole district (72), the positive pole of described LED chip (3) is fixed on positive polar region (71) by eutectic mode, the negative pole of described LED chip (3) is fixed in negative pole district (72) by eutectic mode, described substrate (1) back side is provided with positive terminal pad (91) and negative terminal pad (92), described substrate (1) is provided with the first via (61) that positive polar region (71) are connected with positive terminal pad (91) and the second via (62) that negative pole district (72) are connected with negative terminal pad (92).
2. a kind of high-power LED encapsulation construction according to claim 1, is characterized in that, described glass packaging layer (4) be shaped as planar structure, convex lens structures or concave structure.
3. a kind of high-power LED encapsulation construction according to claim 1, is characterized in that, the material of described substrate (1) is aluminium nitride, carborundum, aluminium silicon carbide, metallic copper or graphite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420070908.5U CN203850334U (en) | 2014-02-18 | 2014-02-18 | High-power LED package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420070908.5U CN203850334U (en) | 2014-02-18 | 2014-02-18 | High-power LED package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203850334U true CN203850334U (en) | 2014-09-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420070908.5U Expired - Lifetime CN203850334U (en) | 2014-02-18 | 2014-02-18 | High-power LED package structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203850334U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851961A (en) * | 2015-03-24 | 2015-08-19 | 湘能华磊光电股份有限公司 | Chip scale packaging method and structure for light-emitting device |
| CN105826454A (en) * | 2016-05-17 | 2016-08-03 | 中国人民大学 | Discrete transparent ceramic flip chip integrated LED light source and packaging method thereof |
| CN108075026A (en) * | 2017-12-08 | 2018-05-25 | 蔡志嘉 | Three defending type LED component and preparation method thereof |
| CN113497174A (en) * | 2020-03-20 | 2021-10-12 | 东莞市中麒光电技术有限公司 | Small-spacing LED display screen module and manufacturing method thereof |
-
2014
- 2014-02-18 CN CN201420070908.5U patent/CN203850334U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851961A (en) * | 2015-03-24 | 2015-08-19 | 湘能华磊光电股份有限公司 | Chip scale packaging method and structure for light-emitting device |
| CN104851961B (en) * | 2015-03-24 | 2017-08-25 | 湘能华磊光电股份有限公司 | The chip-scale packaging method and structure of luminescent device |
| CN105826454A (en) * | 2016-05-17 | 2016-08-03 | 中国人民大学 | Discrete transparent ceramic flip chip integrated LED light source and packaging method thereof |
| CN108075026A (en) * | 2017-12-08 | 2018-05-25 | 蔡志嘉 | Three defending type LED component and preparation method thereof |
| CN113497174A (en) * | 2020-03-20 | 2021-10-12 | 东莞市中麒光电技术有限公司 | Small-spacing LED display screen module and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 510890 Huadu District, Guangdong, Guangzhou Flower Town, SAST Road, No. 1, No. 1 Patentee after: HONGLI ZHIHUI GROUP Co.,Ltd. Address before: 510890 Huadu District, Guangdong, Guangzhou Flower Town, SAST Road, No. 1, No. 1 Patentee before: GUANGZHOU HONGLI OPTO-ELECTRONIC Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140924 |