CN105826454A - Discrete transparent ceramic flip chip integrated LED light source and packaging method thereof - Google Patents

Discrete transparent ceramic flip chip integrated LED light source and packaging method thereof Download PDF

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Publication number
CN105826454A
CN105826454A CN201610325593.8A CN201610325593A CN105826454A CN 105826454 A CN105826454 A CN 105826454A CN 201610325593 A CN201610325593 A CN 201610325593A CN 105826454 A CN105826454 A CN 105826454A
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CN
China
Prior art keywords
substrate
chip
tin cream
light source
led light
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Pending
Application number
CN201610325593.8A
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Chinese (zh)
Inventor
曹永革
申小飞
麻朝阳
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Renmin University of China
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Renmin University of China
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Priority to CN201610325593.8A priority Critical patent/CN105826454A/en
Publication of CN105826454A publication Critical patent/CN105826454A/en
Priority to PCT/CN2017/072189 priority patent/WO2017197921A1/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder

Abstract

The invention discloses a discrete transparent ceramic flip chip integrated LED light source and a packaging method thereof. The discrete integrated LED light source is composed of a plurality of chip units. Each chip unit is composed of a substrate, solder paste, a flip chip and a transparent fluorescent ceramic piece sequentially from bottom to top. The two ends of the top of each substrate are each equipped with a dam. Each substrate is composed of three substrate segments which are segmented by a counter electrode. Each counter electrode is composed of a positive electrode and a negative electrode which do not contact each other. Each positive electrode or negative electrode is composed of an electrode layer 1 contacting the bottom surfaces of the corresponding substrate segments and an electrode layer 2 passing through the corresponding substrate and contacting the solder paste. The packaging volume of the LED light source is reduced effectively. The LED light source is small, thin and light. Under the condition of same luminous flux, the light density can be improved by reducing the light emitting surface. Higher power can be provided under the condition of same device size. Full-automatic and large-scale packaging is realized, the yield is increased, and the cost is reduced.

Description

Discrete crystalline ceramics Flip-chip IC LED light source and method for packing thereof
Technical field
The invention belongs to semiconductor applications, relate to a kind of discrete crystalline ceramics Flip-chip IC LED light source and method for packing thereof.
Background technology
LED industry develops towards small size, high energy efficiency direction at present, and high density point develops away from direction;The mode of flip-chip packaged COB has at present:
1., on substrate after upside-down mounting multiple chips, on chip, coating is mixed with the organic silica gel of fluorescent material as shown in Figure 1;
2. upside-down mounting multiple chips on substrate, covers monoblock transparent fluorescent ceramic sheet above chip, encapsulates as shown in Figure 2 with potsherd central filler organic silica gel at chip;
But there is following several defect in this two ways:
1.COB monoblock packaging, assembles very flexible to rear road, it is impossible to standardization, automatization;
2. fluorescent material and organic silica gel mixing, it is poor that manufacturing process controls colour consistency, and the Bin yield that falls is low;
3. monoblock transparent fluorescent ceramic covers, and is easily caused fluorescence ceramics sheet and uneven causes potsherd to rupture because being heated;
4. having organic silica gel to isolate in the middle of potsherd and luminescence chip, blue light reduces through organic silica gel remote excitation transparent fluorescent ceramic luminescence remote excitation efficiency.
There is a crucial luminous intensity distribution problem in LED light source in terms of illumination Application Design, i.e. with LED light source as lighting source, it is necessary to by light fixture, reflector, lens, configure light emission direction, reflecting angle, intensity of illumination distribution;And Large area light source is very big to luminous intensity distribution design difficulty, expect that ideal luminous intensity distribution cannot realize.
Summary of the invention
It is an object of the invention to provide a kind of discrete crystalline ceramics Flip-chip IC LED light source and method for packing thereof.
The discrete integrated LED light source that the present invention provides, is made up of the chip unit shown in several Fig. 3;
Each chip unit is made up of substrate, tin cream, flip-chip 6 and transparent fluorescent ceramic sheet 7 the most successively, and it is provided around box dam 8 at the end face of described substrate, described box dam 8 surrounds described tin cream, flip-chip 6 and transparent fluorescent ceramic sheet 7, and and described tin cream, flip-chip 6 and transparent fluorescent ceramic sheet 7 between leave space;
Described substrate is made up of three substrate fragments 3 being split to form electrode;
Wherein, described electrode is made up of positive pole and negative pole, and described positive pole does not contacts with negative pole;Each negative or positive electrode is by the electrode layer 1 (numbering 1 in corresponding diagram 3) contacted with the bottom surface of described substrate fragment and passes described substrate electrode layer 2 (numbering 2 in the corresponding diagram 3) composition contacted with described tin cream;
Described tin cream is by being positioned at same layer and discontiguous tin cream I (numbering 4 in corresponding diagram 3) and tin cream II (numbering 5 in corresponding diagram 3) forms;At described tin cream I (numbering 4 in corresponding diagram 3), tin cream II (numbering 5 in corresponding diagram 3), between substrate fragment 3 and flip-chip 6, form cavity;
Described flip-chip 6 covers described cavity and described tin cream I (numbering 4 in corresponding diagram 3) and tin cream II (numbering 5 in corresponding diagram 3);
Described transparent fluorescent ceramic sheet 7 covers described flip-chip 6.
In above-mentioned discrete integrated LED light source, the material constituting substrate is aluminium nitride substrate, aluminum oxide substrate, copper base or aluminium base;
The material substrate constituting described flip-chip is sapphire (Al2O3), silicon (Si) or carborundum (SiC);
The material constituting described transparent fluorescent ceramic sheet is Y3Al5O12:Ce3+;This transparent fluorescent ceramic sheet can be sintered by ceramic material powder and sintering aid mixing and be obtained;Wherein, described ceramic material powder is specifically by AL2O3、Y2O3-and CeO2;Described sintering aid is specifically selected from CaO, MgO, TiO2、SiO2, at least one in MnO and Kaolin.
Described transparent fluorescent ceramic sheet prepares the most as follows: will first carry out vacuum-sintering after described ceramic material powder and sintering aid mixing, the hotter static pressure sintering such as carries out, annealing and obtain;
Wherein, in described vacuum-sintering step, sintering temperature is 1500-1800 DEG C, and temperature retention time is 5-30 hour, and vacuum is 10-1-10-4Pa
In the hot static pressure sintering step such as described, sintering temperature is 1600-1800 DEG C, and temperature retention time is 1-5 hour, and pressure is 120-180MPa;
Described annealing steps is specially and is incubated 5-40 hour at 800-1500 DEG C, then furnace cooling.
It is golden or silver-colored for constituting the described material to electrode;
The method encapsulating described discrete integrated LED light source that the present invention provides, comprises the steps:
1) electrocondution slurry is printed by the way of half tone silk-screen prints and formed described to electrode by baking on the substrate;
2) silk-screen is used to be printed on substrate by tin cream/scaling powder;
3) by flip-chip on the position that described tin cream/scaling powder is corresponding after, flip crystal bonding area on substrate/support, complete eutectic, after cleaning, by bonder, described transparent fluorescent ceramic sheet is placed on the chip again, after the fixing described transparent fluorescent ceramic sheet of baking, the surrounding at described transparent fluorescent ceramic sheet draws the baking of box dam glue, obtains a chip unit in described discrete integrated LED light source;
4) repeating said steps 2) and 3), obtain the discrete integrated LED light source being made up of several chip units.
The present invention utilizes transparent fluorescent ceramic contact heat conduction to process, and forms upper and lower heat conduction;And use discrete transparent fluorescent ceramic cover plate, and do not use fluorescent material;The device packaging technology standardization of this discrete integrated LED light source, rear road is easy to assembly flexibly, is suitable for high-volume automatization, scale operation.
The invention have the advantages that
1, the heat conduction of transparent fluorescent ceramic contact processes, and forms upper and lower heat conduction and heat radiation, better heat-radiation effect;
2, encapsulation volume is effectively reduced, little, thin and light, cater to the trend of current LED illumination application microminaturization, design application is more flexible, has broken the restriction that conventional light source size is brought to design;
3, in the situation that luminous flux is equal, reducing light-emitting area and can improve optical density, same device volume can provide greater power;
4, rear road assembles and can use SMT surface mount process, simplifies substrate, arranges flexibly, and luminous intensity distribution is simple;
5, without gold thread, crystal-bonding adhesive etc., the thermosphere in cutting down the number of intermediate links, it is resistant to big electric current, safety, reliability, especially cost performance are higher;
6, full-automation can be realized, scale, promote yield, reduce cost.
Accompanying drawing explanation
Fig. 1 is the structure of LED light source in prior art;
Fig. 2 is the structure of LED light source in prior art;
In the discrete crystalline ceramics Flip-chip IC LED light source that Fig. 3 provides for the present invention, the structural representation of chip unit;Wherein, 1 is electrode layer 1;2 is electrode layer 2;3 is substrate fragment;4 is tin cream I;5 is tin cream II;6 is flip-chip;7 is transparent fluorescent ceramic sheet;8 is box dam;
The spectral distribution curve figure of the discrete crystalline ceramics Flip-chip IC LED light source that Fig. 4 provides for the present invention.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is further elaborated, but the present invention is not limited to following example.Described method is conventional method if no special instructions.Described raw material the most all can be either commercially available from open.
In following embodiment, transparent fluorescent ceramic sheet Y used3Al5O12:Ce3+By AL2O3、Y2O3And CeO2According to proportioning weigh after, add sintering aid CaO mixing after prior to 150 DEG C of vacuum-sinterings, (vacuum is 10-1-10-4Pa) after 15 hours, hot static pressure sinters 3 hours under conditions of 1700 DEG C of pressure are 150MPa etc., is incubated 30 hours in 120 DEG C, then furnace cooling and obtain.
Embodiment 1,
What the present invention provided is made up of the chip unit shown in several Fig. 3;
Each chip unit is made up of substrate, tin cream, flip-chip 6 and transparent fluorescent ceramic sheet 7 the most successively, and it is provided around box dam 8 at the end face of substrate, box dam 8 surrounds tin cream, flip-chip 6 and transparent fluorescent ceramic sheet 7, and and tin cream, flip-chip 6 and transparent fluorescent ceramic sheet 7 between leave space;
Substrate is made up of three substrate fragments 3 being split to form electrode;
Wherein, electrode is made up of positive pole and negative pole, and positive pole does not contacts with negative pole;Each negative or positive electrode is by the electrode layer 1 (numbering 1 in corresponding diagram 3) contacted with the bottom surface of substrate fragment and passes substrate electrode layer 2 (numbering 2 in the corresponding diagram 3) composition contacted with tin cream;
Tin cream is by being positioned at same layer and discontiguous tin cream I (numbering 4 in corresponding diagram 3) and tin cream II (numbering 5 in corresponding diagram 3) forms;At tin cream I (numbering 4 in corresponding diagram 3), tin cream II (numbering 5 in corresponding diagram 3), between substrate fragment 3 and flip-chip 6, form cavity;
Flip-chip covers this cavity and tin cream I (numbering 4 in corresponding diagram 3) and tin cream II (numbering 5 in corresponding diagram 3);
Transparent fluorescent ceramic sheet 7 covers flip-chip 6.
This discrete integrated LED light source can encapsulate as follows and obtain:
1) electrocondution slurry is imprinted on substrate by the way of half tone silk-screen prints by baking shape paired electrode;
2) silk-screen is used to be printed on substrate by tin cream/scaling powder;
3) by flip-chip on the position that tin cream/scaling powder is corresponding after, flip crystal bonding area on substrate/support, complete eutectic, after cleaning, by bonder, transparent fluorescent ceramic sheet is placed on chip again, after the fixing transparent fluorescent ceramic sheet of baking, the surrounding at transparent fluorescent ceramic sheet draws the baking of box dam glue, obtains a chip unit in discrete integrated LED light source;
4) step 2 is repeated) and 3), obtain the discrete integrated LED light source being made up of several chip units.
The material constituting substrate is aluminium nitride substrate;
The material substrate constituting flip-chip is sapphire;
The material constituting transparent fluorescent ceramic sheet is Y3Al5O12:Ce3+
The material of structure paired electrode is gold.
Embodiment 2, the light source light spectrum test report of embodiment 1 gained discrete integrated LED light source
Test condition: method of testing uses integrating sphere measurement;
Ambient temperature: 25.3Deg;Ambient humidity: 65%;
Test scope: 380nm-780nm;Peak I P:50917 (78%);
Measurement pattern: accurately test the time of integration: 419ms;
Acquired results is as follows.
Wherein, CIE color parameter is as shown in table 1;
Table 1, CIE color parameter
Optical parameter result is as follows: luminous flux phi=4410.1lm light efficiency: 111.99lm/w radiant flux Φ e=13.388w scotopic vision: 8402.5S/P:1.9053;
Electrical quantity result is as follows: setting input voltage V=28.13V, input current I=1.400A, test result is the power P=39.38W of this LED light source;Power factor PF=1.000.
The spectral distribution curve figure of the discrete crystalline ceramics Flip-chip IC LED light source that Fig. 4 provides for the present invention.As seen from the figure, gained emission spectrum seriality is good, and color rendering properties is higher.
It is seen from the above data that the white LED light source that the present invention provides achieves Gao Guangtong and specular removal, its light valid value is more than 110lm/W, and luminous flux is more than 4400lm.
Although the foregoing describing the detailed description of the invention of the present invention; but those familiar with the art is to be understood that; we are merely exemplary described specific embodiment; rather than for the restriction to the scope of the present invention; those of ordinary skill in the art, in the equivalent modification made according to the spirit of the present invention and change, should be contained in the scope of the claimed protection of the present invention.

Claims (3)

1. a discrete integrated LED light source, is made up of several chip units;
Each chip unit is made up of substrate, tin cream, flip-chip and transparent fluorescent ceramic sheet the most successively, and it is provided around box dam at the end face of described substrate, described box dam surrounds described tin cream, flip-chip and transparent fluorescent ceramic sheet, and and described tin cream, flip-chip and transparent fluorescent ceramic sheet between leave space;
Described substrate is made up of three substrate fragments being split to form electrode;
Wherein, described electrode is made up of positive pole and negative pole, and described positive pole does not contacts with negative pole;Each negative or positive electrode forms by the electrode layer 1 contacted with the bottom surface of described substrate fragment with through described substrate the electrode layer 2 that contacts with described tin cream;
Described tin cream is by being positioned at same layer and discontiguous tin cream I and tin cream II forms;At described tin cream I, tin cream II, between substrate fragment and flip-chip, form cavity;
Described flip-chip covers described cavity and described tin cream I and tin cream II;
Described transparent fluorescent ceramic sheet covers described flip-chip.
Discrete integrated LED light source the most according to claim 1, it is characterised in that: the material constituting described substrate is aluminium nitride substrate, aluminum oxide substrate, copper base or aluminium base;
The material substrate constituting described flip-chip is sapphire, silicon or carborundum;
The material constituting described transparent fluorescent ceramic sheet is Y3Al5O12:Ce3+
It is golden or silver-colored for constituting the described material to electrode.
3. prepare a method for discrete integrated LED light source described in claim 1 or 2, comprise the steps:
1) electrocondution slurry is imprinted on by the way of half tone silk-screen prints and is formed described to electrode by baking on the substrate;
2) silk-screen is used to be printed on substrate by tin cream/scaling powder;
3) by flip-chip on the position that described tin cream/scaling powder is corresponding after, flip crystal bonding area on substrate/support, complete eutectic, after cleaning, by bonder, described transparent fluorescent ceramic sheet is placed on the chip again, after the fixing described transparent fluorescent ceramic sheet of baking, the surrounding at described transparent fluorescent ceramic sheet draws the baking of box dam glue, obtains a chip unit in described discrete integrated LED light source;
4) repeating said steps 2) and 3) several times, obtain described discrete integrated LED light source.
CN201610325593.8A 2016-05-17 2016-05-17 Discrete transparent ceramic flip chip integrated LED light source and packaging method thereof Pending CN105826454A (en)

Priority Applications (2)

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CN201610325593.8A CN105826454A (en) 2016-05-17 2016-05-17 Discrete transparent ceramic flip chip integrated LED light source and packaging method thereof
PCT/CN2017/072189 WO2017197921A1 (en) 2016-05-17 2017-01-23 Cover plate flip chip integrated apparatus for exciting single crystal to emit white light

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298755A (en) * 2016-10-21 2017-01-04 中国人民大学 A kind of discrete cover plate flip LED white light emitting device
CN106783828A (en) * 2017-02-15 2017-05-31 中国人民大学 A kind of flip LED car light
CN106764561A (en) * 2016-12-27 2017-05-31 江苏稳润光电科技有限公司 A kind of integrated lamp and preparation method based on flip LED chips Vacuum Package
WO2017197921A1 (en) * 2016-05-17 2017-11-23 中国人民大学 Cover plate flip chip integrated apparatus for exciting single crystal to emit white light
CN110242877A (en) * 2019-04-12 2019-09-17 华芯半导体研究中心(广州)有限公司 A kind of high heat dissipation high-power LED lamp bead and preparation method thereof
CN111613709A (en) * 2020-05-27 2020-09-01 深圳市华星光电半导体显示技术有限公司 Mini light-emitting diode backlight module, manufacturing method thereof and display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103956420A (en) * 2014-03-28 2014-07-30 深圳市世民科技有限公司 LED crystal covering structure coated with fluorescent powder and manufacturing method of LED crystal covering structure coated with fluorescent powder
CN203850334U (en) * 2014-02-18 2014-09-24 广州市鸿利光电股份有限公司 High-power LED package structure
CN205645870U (en) * 2016-05-17 2016-10-12 中国人民大学 Discrete transparent ceramic face down chip integrate LED light source

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203850334U (en) * 2014-02-18 2014-09-24 广州市鸿利光电股份有限公司 High-power LED package structure
CN103956420A (en) * 2014-03-28 2014-07-30 深圳市世民科技有限公司 LED crystal covering structure coated with fluorescent powder and manufacturing method of LED crystal covering structure coated with fluorescent powder
CN205645870U (en) * 2016-05-17 2016-10-12 中国人民大学 Discrete transparent ceramic face down chip integrate LED light source

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017197921A1 (en) * 2016-05-17 2017-11-23 中国人民大学 Cover plate flip chip integrated apparatus for exciting single crystal to emit white light
CN106298755A (en) * 2016-10-21 2017-01-04 中国人民大学 A kind of discrete cover plate flip LED white light emitting device
CN106764561A (en) * 2016-12-27 2017-05-31 江苏稳润光电科技有限公司 A kind of integrated lamp and preparation method based on flip LED chips Vacuum Package
CN106783828A (en) * 2017-02-15 2017-05-31 中国人民大学 A kind of flip LED car light
CN110242877A (en) * 2019-04-12 2019-09-17 华芯半导体研究中心(广州)有限公司 A kind of high heat dissipation high-power LED lamp bead and preparation method thereof
CN111613709A (en) * 2020-05-27 2020-09-01 深圳市华星光电半导体显示技术有限公司 Mini light-emitting diode backlight module, manufacturing method thereof and display device

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Application publication date: 20160803