CN206098390U - Discrete apron flip -chip LED white light illuminator - Google Patents

Discrete apron flip -chip LED white light illuminator Download PDF

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Publication number
CN206098390U
CN206098390U CN201621146508.3U CN201621146508U CN206098390U CN 206098390 U CN206098390 U CN 206098390U CN 201621146508 U CN201621146508 U CN 201621146508U CN 206098390 U CN206098390 U CN 206098390U
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China
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chip
led
flip
layer
discrete
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CN201621146508.3U
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Inventor
曹永革
申小飞
麻朝阳
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Renmin University of China
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Renmin University of China
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Priority to CN201621146508.3U priority Critical patent/CN206098390U/en
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Abstract

The utility model discloses a discrete apron flip -chip LED white light illuminator. The device, glue and a plurality of interval distribution's chip unit constitutes by base plate, conducting wire layer, box dam, every chip unit comprises weld layer, flip -chip LED chip, bonding glue film and apron layer supreme down in proper order, the conducting wire level in on the base plate, box dam glue is located on the layer of conducting wire, surround all chip unit, and with leave the space between the chip unit. The utility model provides a discrete apron LED white light illuminator through the pad combination on flip -chip LED chip and the base plate, goes up the discrete apron admittedly on flip -chip LED chip, removed phosphor powder and silica gel from to the luminous efficacy who has improved LED also can reduce the decay increase LED life of LED chip.

Description

A kind of discrete cover plate flip LED white light emitting device
Technical field
This utility model belongs to LED field, is related to a kind of discrete cover plate flip LED white light emitting device.
Background technology
In conventional LED package structure, (as shown in Figure 1) directly overlays LED chip surface, LED core using fluorescent glue at present The high temperature that piece long-term work is produced can cause the fluorescent material life-span in fluorescent glue to be greatly attenuated even failure, and this is that LED light source is bright Degree decay and the one of the main reasons of color drift.Simultaneously as fluorescent material mixing silica gel, it is luminous that silica gel directly covers chip Face, the high temperature that LED chip long-term work is produced can cause silica gel transmitance to reduce affecting light.Meanwhile, also further have impact on The service life of LED chip.
Therefore, how to improve the luminous efficiency of LED, and reduce the decay of LED chip, it is ability to increase LED service lifes The problem that field technique personnel need to solve.
Utility model content
The purpose of this utility model is to provide a kind of discrete cover plate flip LED white light emitting device.
The discrete cover plate flip LED device that this utility model is provided, by substrate, conductive circuit layer, box dam glue and some The individual chip unit composition being spaced apart;
Each chip unit is made up of weld layer, flip-chip, glue line and cover layer from the bottom to top successively;
The conductive circuit layer is located on the substrate;
The box dam glue is located in the conductive circuit layer, surrounds all chip units, and between the chip unit Leave space.
In said apparatus, the substrate concretely LED-baseplate;
The flip-chip is flip LED chips.
The LED-baseplate can more specifically be aluminum oxide substrate, aluminium nitride substrate, aluminium base, copper base or glass substrate.
The effect of the weld layer is that the flip-chip is weldingly fixed in the conductive circuit layer on substrate.
The conductive circuit layer is thick film circuit or thin flm circuit.
The material for constituting the glue line is silica gel, epoxy resin or silicones;
The cover layer is fluorescent glass piece or transparent fluorescent ceramic piece;Various fluorescent glass pieces or transparent fluorescent ceramic piece It is suitable for;Such as, the material for constituting the transparent fluorescent ceramic piece can be Y3Al5O12:Ce3+;Can be obtained as follows:By AL2O3、Y2O3And CeO2After weighing according to proportioning, add after sintering aid CaO mixes prior to 150 DEG C of vacuum-sintering (vacuums For 10-1-10-4Pa) after 15 hours, then at 1700 DEG C of pressure be 150MPa under conditions of etc. hot static pressure sinter 3 hours, in 120 DEG C Insulation 30 hours, then furnace cooling and obtain.
The thickness of the cover layer is 0.1-0.5mm, concretely 0.25mm;
The material for constituting the box dam glue is white RTV silica gel, milky silica gel or transparent silica gel.
What this utility model was provided prepares the discrete cover plate flip LED device, can be obtained as follows:
1) set gradually the conductive circuit layer on the substrate from the bottom to top;
2) several pads being spaced apart, the position of the pad and the chip are set in the conductive circuit layer The position of unit is corresponding;
3) welding compound is coated on the pad, then each described flip-chip distribution is inverted in into corresponding pad On, welded, obtained the weld layer;
Glue line and cover layer are sequentially prepared from the bottom to top on the flip-chip again, toast the fixation cover layer Afterwards, obtain a chip unit in the discrete cover plate flip LED device;
3) repeating said steps obtain several chip units 2) with 3);
4) surrounding in all chip units draws the baking of box dam glue, makes the box dam glue surround all chip units, and Space is left between the chip unit, the discrete cover plate flip LED device is obtained.
In said method, the method for welding is galvanoplastic, turmeric method, spray stannum method or stencil.
In addition, application of the discrete cover plate flip LED device that provides of above-mentioned this utility model in LED is luminous and containing The LED matrix of above-mentioned discrete cover plate flip LED device, falls within protection domain of the present utility model.
The discrete cover plate LED white light emitting devices that this utility model is provided, by the weldering on flip LED chips and substrate Disk is combined, it is solid on the flip LED chips on discrete cover plate, eliminate fluorescent material and silica gel, so as to improve the luminous effect of LED Rate can also reduce the decay of LED chip increases LED service lifes.
Description of the drawings
Fig. 1 is the structure of LED light source in prior art;Wherein, 1 it is substrate, 2 be conductive circuit layer, 3 be box dam glue, 4 is Weld layer, 5 be flip-chip, 6 be fluorescent material mix layer of silica gel;
The LED light source structural representation that Fig. 2 is provided for this utility model;Wherein, 1 it is substrate, 2 be conductive circuit layer, 3 is Box dam glue, 4 be weld layer, 5 be flip-chip, 6 be glue line, 7 be cover layer;
The spectral distribution curve of the discrete crystalline ceramics Flip-chip IC LED light source that Fig. 3 is provided for this utility model Figure.
Specific embodiment
This utility model is further elaborated with reference to specific embodiment, but this utility model is not limited to following reality Apply example.Methods described is conventional method if no special instructions.The raw material if no special instructions can be from open business way Footpath obtains.
In following embodiments, transparent fluorescent ceramic piece Y used3Al5O12:Ce3+By AL2O3、Y2O3And CeO2Claim according to proportioning After amount, add sintering aid CaO mixing after prior to 150 DEG C of vacuum-sinterings, (vacuum is 10-1-10-4Pa) after 15 hours, then at 1700 DEG C of pressure are that hot static pressure is sintered 3 hours under conditions of 150MPa etc., are incubated 30 hours in 120 DEG C, then furnace cooling and .
Embodiment 1,
The discrete cover plate flip LED device that this utility model is provided, its structural representation are as shown in Figure 2.
The discrete cover plate flip LED device can be obtained according to method:
1) thick film circuit is set gradually from the bottom to top as conductive circuit layer on substrate;
2) several pads being spaced apart, the position of each pad and the position of chip unit are set in conductive circuit layer Put corresponding;
3) welding compound is coated on pad, then each flip LED chips is inverted in respectively by bonder corresponding Pad on, cross Reflow Soldering welded, flip LED chips are fixed, the weld layer is obtained;
It is sequentially prepared glue line and the thickness being made up of high temperature resistant silica gel again on the flip LED chips from the bottom to top For 0.25mm, by transparent fluorescent ceramic piece Y3Al5O12:Ce3+The cover layer of composition, after baking securing cover plate layer, obtains discrete A chip unit in cover plate flip LED device;
3) repeat step obtains several chip units 2) with 3);
4) surrounding in all chip units passes through oven cooking cycle after drawing circle point gum machine to draw a corral dam glue, makes to enclose Dam glue surrounds all chip units, and space is left between chip unit, obtains the discrete cover plate flip LED device.
The light source light spectrum test report of embodiment 2,1 gained discrete integrated LED light source of embodiment
Test condition:Method of testing adopts integrating sphere measurement;
Ambient temperature:25.3Deg;Ambient humidity:65%;
Test scope:380nm-780nm;Peak I P:50917 (78%);
Measurement pattern:The accurate test time of integration:124ms;
Acquired results are as follows.
Wherein, CIE color parameters are as shown in table 1;
Table 1, CIE color parameters
Optical parameter result is as follows:Luminous flux phi=4174.9lm light efficiencies:154.6lm/w radiant flux Φ e=111.744w Scotopic vision:7348.9S/P:1.7603;
Electrical quantity result is as follows:Setting input voltage V=54V, input current I=0.5A, test result are the LED light source Power P=27W;Power factor PF=1.000.
The spectral distribution curve of the discrete crystalline ceramics Flip-chip IC LED light source that Fig. 3 is provided for this utility model Figure.As seen from the figure, gained emission spectrum seriality is good, and color rendering propertiess are higher.
It is seen from the above data that the white LED light source that this utility model is provided realizes bloom lead to and specular removal, its Light valid value is more than 154.6lm/W, and luminous flux is more than 4174lm.
Although the foregoing describing the specific embodiment of utility model, those familiar with the art should Understand, the specific embodiment described by us is merely exemplary, rather than for the restriction to scope of the present utility model, Those of ordinary skill in the art should be covered in the equivalent modification and change made according to spirit of the present utility model In scope of the claimed protection of the present utility model.

Claims (6)

1. a kind of discrete cover plate flip LED device, by substrate, conductive circuit layer, box dam glue and several cores for being spaced apart Blade unit is constituted;
Each chip unit is made up of weld layer, flip-chip, glue line and cover layer from the bottom to top successively;
The conductive circuit layer is located on the substrate;
The box dam glue is located in the conductive circuit layer, is surrounded all chip units, and is left between the chip unit Space.
2. device according to claim 1, it is characterised in that:The substrate is LED-baseplate;
The flip-chip is flip LED chips.
3. device according to claim 2, it is characterised in that:The LED-baseplate be aluminum oxide substrate, aluminium nitride substrate, Aluminium base, copper base or glass substrate.
4. device according to claim 1, it is characterised in that:The conductive circuit layer is thick film circuit or thin flm circuit.
5. device according to claim 1, it is characterised in that:The material for constituting the glue line is silica gel, asphalt mixtures modified by epoxy resin Fat or silicones;
The cover layer is fluorescent glass piece or transparent fluorescent ceramic piece;
The material for constituting the box dam glue is white RTV silica gel, milky silica gel or transparent silica gel.
6. according to arbitrary described device in claim 1-5, it is characterised in that:The thickness of the cover layer is 0.1-0.5mm Or 0.25mm.
CN201621146508.3U 2016-10-21 2016-10-21 Discrete apron flip -chip LED white light illuminator Active CN206098390U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201621146508.3U CN206098390U (en) 2016-10-21 2016-10-21 Discrete apron flip -chip LED white light illuminator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201621146508.3U CN206098390U (en) 2016-10-21 2016-10-21 Discrete apron flip -chip LED white light illuminator

Publications (1)

Publication Number Publication Date
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298755A (en) * 2016-10-21 2017-01-04 中国人民大学 A kind of discrete cover plate flip LED white light emitting device
CN109148429A (en) * 2018-08-28 2019-01-04 开发晶照明(厦门)有限公司 Light-emitting diode encapsulation structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298755A (en) * 2016-10-21 2017-01-04 中国人民大学 A kind of discrete cover plate flip LED white light emitting device
CN109148429A (en) * 2018-08-28 2019-01-04 开发晶照明(厦门)有限公司 Light-emitting diode encapsulation structure
CN109148429B (en) * 2018-08-28 2020-09-22 开发晶照明(厦门)有限公司 Light emitting diode packaging structure
US11315908B2 (en) 2018-08-28 2022-04-26 Kaistar Lighting(Xiamen) Co., Ltd. LED package structure having improved brightness

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