CN103956420A - LED crystal covering structure coated with fluorescent powder and manufacturing method of LED crystal covering structure coated with fluorescent powder - Google Patents
LED crystal covering structure coated with fluorescent powder and manufacturing method of LED crystal covering structure coated with fluorescent powder Download PDFInfo
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- CN103956420A CN103956420A CN201410120089.5A CN201410120089A CN103956420A CN 103956420 A CN103956420 A CN 103956420A CN 201410120089 A CN201410120089 A CN 201410120089A CN 103956420 A CN103956420 A CN 103956420A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The invention provides an LED crystal covering structure coated with fluorescent powder. The LED crystal covering structure comprises a shell, a substrate, an LED chip, a first electrode, a second electrode, a reflecting layer and a covering layer. The reflecting layer is integrally formed on the substrate, the LED chip is welded to the substrate in an inversed mode and provided with a positive electrode and a negative electrode, the positive electrode is connected with the first electrode, the negative electrode is connected with the second electrode, and the covering layer covers the upper portion of the LED chip. The LED crystal covering structure has the advantages that the electric conduction area is large, internal resistance is small, a large current can pass through the LED crystal covering structure, and excessively-large heat caused by the large internal resistance can be reduced; the light emitting efficiency is high, and the light emitting angle is large. A packaging technology is simplified, the packaging cost is reduced, and the production efficiency is improved; light attenuation is low, rapid light attenuation caused by the heat is avoided, the service life of the LED chip is accordingly prolonged, and the service life of the LED crystal covering structure is more than ten times that of a common lamp.
Description
Technical field
The present invention relates to a kind of semiconductor structure, be specifically related to a kind of LED flip chip structure and manufacture method thereof that is coated with fluorescent material.
Background technology
LED industry is one of industry attracting most attention in recent years, be developed so far, that LED product has had is energy-conservation, power saving, high efficiency, the reaction time is fast, the life cycle time is long and not mercurous, have the advantages such as environmental benefit, yet the LED high power products input power overwhelming majority can be converted to heat energy conventionally, generally speaking, if the heat energy producing when LED is luminous cannot be derived, will make LED knot surface temperature too high, affect product life cycle, luminous efficiency and stability etc.The heat radiation approach of crystal covering type LED encapsulating structure, is mainly by LED electrode cable, to conduct to system circuit board to derive at present.But because the heat radiation finite volume of electrode cable makes radiating effect not obvious, the accumulation of its heat still produces significant impact to product life cycle, luminous efficiency.On the other hand, due to welding procedure, present LED technology is not suitable for the making of the LED flip chip structure of some small volumes, and manufacture craft cost is high and efficiency is low.
Summary of the invention
The present invention is directed to the deficiency that the above-mentioned existing technology of mentioning exists, a kind of LED flip chip structure and manufacture method thereof that is coated with fluorescent material is provided.
Concrete, the invention provides a kind of LED flip chip structure that is coated with fluorescent material, it comprises housing, metallic support, substrate, LED chip, the first electrode, the second electrode, reflector and cover layer, described LED chip, the first electrode, the second electrode, reflector and cover layer are encapsulated in described housing, described substrate package is in described metallic support, in described housing, be filled with fluorescent material and silica gel, described reflector is one-body molded on described substrate, described the first electrode and the second electrode welding are on described reflector, described LED chip comprises positive electrode and negative electrode, described the first electrode top is provided with die bond region, the positive electrode of described LED chip is arranged on described die bond region, described the second electrode top is provided with contact layer, the negative electrode of described LED chip and described contact layer are electrically connected, described cover layer covers the top that is arranged on described LED chip.
Preferably, described metallic support is copper stent.The mid portion of described metallic support is provided with rectangle insulation strip, corresponding with the insulating regions arranging in the middle of substrate.
Preferably, described substrate is aluminium base, copper coin or other metallic plates.
Preferably, described the first electrode and the second electrode have different polarity.
The material of described housing is the good materials of thermal diffusivity such as aluminium nitride (AlN), silicon (Si), boron nitride (BN) or graphite (C).
Preferably, the electric connection of described LED chip is for covering crystal type.
Preferably, its material of described reflector is plastics or macromolecular material, for example, and PPA (Polyphthalamide) plastics or epoxide resin material.
A kind of method of making this LED flip chip structure:
S1 a: substrate and a LED chip are provided;
S2: die bond: first put tin cream on aluminium base, then with vacuum slot, LED chip is picked up and moves to the position corresponding with aluminium base, then be placed on corresponding position.
S3: sintering: make tin cream adhesive curing by reflow soldering, together with chip join, sintering requires molten some temperature of material tin cream that reflow soldering temperature curve is set by aluminium base.
S4: impregnation and deaeration: according to the requirement of the wavelength value of different LED chips and colour temperature, the component of allotment fluorescent material and silica gel, after the component of deployed silica gel and fluorescent material, carries out deaeration through centrifugation apparatus.
S5: some glue: utilize spot gluing equipment by silica gel point on corresponding position.
S6: baking: utilize baking box that silica gel baking is solidified, the temperature setting of baking box is set to 150 ℃, and baking time is set to 2 hours, prevents that fluorescent material from precipitating.
S7: separated and test: a plurality of LED flip chip structures that connect together are carried out after separation, and the photoelectric parameter of test LED flip chip structure, check overall dimension, carry out sorting according to customer requirement to LED flip chip structure simultaneously.
As the preferred embodiment of said method, on the top of described fluorescent material, be provided with an arc film, after fluorescent powder curing, form after a curved surfaces, this arc film is withdrawn.
Advantage of the present invention is as described below: conductive area is large, and internal resistance is little, can bear large electric current and pass through, and reduces because the excessive heat that internal resistance causes greatly; The advantages such as luminance is high, and lighting angle is large.Packaging technology is simplified, and has reduced packaging cost, has improved production efficiency; Low light attenuation, not because the quick light decay that causes of heat, thereby has extended life-span of LED chip, is the more than 10 times of ordinary lamp and lantern.
Accompanying drawing explanation
Fig. 1 is the structural representation that covers brilliant LED structure of the present invention;
Fig. 2 is the structural representation of metallic support of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further explained:
As shown in Figure 1, the invention provides a kind of LED flip chip structure that is coated with fluorescent material, it comprises housing 10, metallic support 12, substrate 1, LED chip 2, the first electrode 3, the second electrode 4, reflector 6 and cover layer 5, in housing 10, be filled with fluorescent material and silica gel 11, the upper end of fluorescent material 11 is formed with a curved surfaces, reflector 6 is one-body molded on substrate 1, LED chip comprises positive electrode 20 and negative electrode 21, positive electrode 20 connects the first electrode 3, negative electrode 21 connects the second electrode 4, and cover layer 5 covers the top that is arranged on LED chip 2.In the present embodiment, cover layer 5 is sapphire or other crystal.The material of the first electrode 3 and the second electrode 4 is metal or alloy.
As shown in Figure 2, the centre of metallic support 12 is provided with rectangle insulation strip 120.
Preferably, substrate 1 is aluminium base or copper coin.In remaining embodiment, substrate 1 can be also ceramic wafer.
Preferably, the first electrode 3, the second electrode 4 have different polarity.In the present embodiment, the first electrode 3 is positivity electrode, and the second electrode 4 is negativity electrode.
Preferably, the first electrode 3 is provided with die bond region, and LED chip 2 is arranged on die bond region 41, the second electrodes 4 and is provided with contact layer 40, and LED chip 2 is electrically connected with contact layer 40.In the present embodiment, contact layer 40 is metal alloy layer.
Preferably, the electric connection of LED chip 2 is for covering crystal type.
Preferably, the material in reflector 6 is plastics or macromolecular material, for example, can be PPA (Polyphthalamide) plastics or epoxide resin material.
Below in conjunction with embodiment, to making the above-mentioned a kind of LED method for packing that covers brilliant LED structure, be further explained:
S1 a: first substrate 1 and a LED chip 2 are provided;
S2: first put tin cream on aluminium base 1, then with vacuum slot, LED chip 2 is picked up and moves to the position corresponding with aluminium base, then be placed on corresponding position.
S3: sintering: make tin cream adhesive curing by reflow soldering, aluminium base, together with chip join, during sintering, according to molten some temperature of material tin cream, is arranged to the temperature curve of reflow soldering.
S4: impregnation and deaeration: the component according to the wavelength value of LED chip 2 and colour temperature requirement allotment fluorescent material and silica gel, after deployed fluorescent material and silica gel, carries out deaeration through centrifugation apparatus.
S5: some glue: utilize spot gluing equipment by silica gel point on corresponding position.
S6: baking: utilize baking box that silica gel baking is solidified, prevent fluorescent material precipitation, the temperature setting of baking box is set to 150 ℃, and the set of time of baking is 2 hours.
S7: test: when making, because the metallic support of a plurality of LED encapsulating structures links together, need to cut the copper muscle of metallic support, after cutting and separating, the photoelectric parameter of test LED flip chip structure, check overall dimension, carry out sorting according to customer requirement to LED flip chip structure simultaneously.
In the present invention, the conductive coefficient of sapphire, silica gel and metal alloy is as follows:
There is not the bonding wire radian of gold thread in the encapsulation of covering brilliant welding, can realize extra-thin planar package.The pulling force of conventional package mode gold thread is only about 10g, and more than the pulling force that covers the contact-making surface of brilliant welding reaches 500g, and chip package can be resisted certain surface extruding and not affect the photoelectric properties of LED, is suitable in narrow and small application space.Such as mobile phone, video camera, the field such as backlight.Simultaneously, in multi-chip integrated, all can bring into play ultra-thin, easy installation, the integrated advantage of height.
Advantage of the present invention is as described below: conductive area is large, and internal resistance is little, can bear large electric current and pass through, and reduces because the excessive heat that internal resistance causes greatly; The advantages such as luminance is high, and lighting angle is large.Packaging technology is simplified, and has reduced packaging cost, has improved production efficiency; Low light attenuation, not because the quick light decay that causes of heat, thereby has extended life-span of LED chip, is the more than 10 times of ordinary lamp and lantern.
Person of ordinary skill in the field is to be understood that: in the situation that not departing from basic principle of the present invention; can carry out various modifications, retouching, combination to the present invention, supplement or the replacement of technical characterictic, these are equal to substitute mode or within obviously mode of texturing all falls into protection scope of the present invention.
Claims (8)
1. a LED flip chip structure that is coated with fluorescent material, it is characterized in that: it comprises housing, metallic support, substrate, LED chip, the first electrode, the second electrode, reflector and cover layer, described LED chip, the first electrode, the second electrode, reflector and cover layer are encapsulated in described housing, described substrate package is inner at described metallic support, the mid portion of described substrate is provided with insulating regions, in described housing, be filled with fluorescent material and silica gel, described reflector is one-body molded on described substrate, described the first electrode and the second electrode welding are on described reflector, described the first electrode top is provided with die bond region, the positive electrode of described LED chip is arranged on described die bond region, described the second electrode top is provided with contact layer, the negative electrode of described LED chip and described contact layer are electrically connected, described cover layer covers the upper strata of described LED chip.
2. LED flip chip structure according to claim 1, is characterized in that: described metallic support is copper stent.
3. LED flip chip structure according to claim 1, is characterized in that: the material of described housing is aluminium nitride, silicon, boron nitride or graphite.
4. LED flip chip structure according to claim 1, is characterized in that: the material in described reflector is plastics or macromolecular material.
5. LED flip chip structure according to claim 4, is characterized in that: the material in described reflector is PPA plastics or epoxy resin.
6. LED flip chip structure according to claim 1, is characterized in that: the mid portion of described metallic support is provided with rectangle insulation strip, and described rectangle insulation strip is corresponding with described insulating regions.
7. a method for the LED flip chip structure of manufacture as described in any one in claim 1-6, is characterized in that, it comprises the following steps:
S1 a: substrate and a LED chip are provided;
S2: die bond: first put tin cream on substrate, then with vacuum slot, LED chip is picked up and moves to the position corresponding with aluminium base, then be placed on corresponding position;
S3: sintering: make tin cream adhesive curing by reflow soldering, substrate, together with chip join, when sintering, is arranged to the temperature curve of reflow soldering according to molten some temperature of material tin cream;
S4: impregnation and deaeration: according to the requirement of the wavelength value of different LED chips and colour temperature, the component of allotment fluorescent material and silica gel, carries out deaeration through centrifugation apparatus after deployed component;
S5: some glue: utilize spot gluing equipment by silica gel point on corresponding position;
S6: baking: utilize baking box that silica gel baking is solidified, the temperature setting of baking box is set to 150 ℃, and the set of time of baking is 2 hours;
S7: separated and test: the metallic support of a plurality of LED flip chip structures that connect together is carried out to cutting and separating, and after separation completes, the photoelectric parameter of test LED flip chip structure is also checked its overall dimension.
8. a kind of method of making LED flip chip structure according to claim 7, is characterized in that: on the top of described fluorescent material, be provided with an arc film, form after a curved surfaces after fluorescent powder curing, this arc film is withdrawn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410120089.5A CN103956420A (en) | 2014-03-28 | 2014-03-28 | LED crystal covering structure coated with fluorescent powder and manufacturing method of LED crystal covering structure coated with fluorescent powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410120089.5A CN103956420A (en) | 2014-03-28 | 2014-03-28 | LED crystal covering structure coated with fluorescent powder and manufacturing method of LED crystal covering structure coated with fluorescent powder |
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| CN103956420A true CN103956420A (en) | 2014-07-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410120089.5A Pending CN103956420A (en) | 2014-03-28 | 2014-03-28 | LED crystal covering structure coated with fluorescent powder and manufacturing method of LED crystal covering structure coated with fluorescent powder |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826454A (en) * | 2016-05-17 | 2016-08-03 | 中国人民大学 | Discrete transparent ceramic flip chip integrated LED light source and packaging method thereof |
| CN108011006A (en) * | 2017-11-28 | 2018-05-08 | 西安科锐盛创新科技有限公司 | A kind of method for packaging white LED |
| CN109817786A (en) * | 2019-01-24 | 2019-05-28 | 江门市江海区凯辉光电器材厂有限公司 | Upside-down mounting straight cutting LED and upside-down mounting straight cutting flat tube LED production technology |
| CN110242877A (en) * | 2019-04-12 | 2019-09-17 | 华芯半导体研究中心(广州)有限公司 | A kind of high heat dissipation high-power LED lamp bead and preparation method thereof |
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| CN101267011A (en) * | 2007-03-13 | 2008-09-17 | 夏普株式会社 | Semiconductor light emitting device and multiple lead frame for semiconductor light emitting device |
| CN102130248A (en) * | 2010-10-08 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Light emitting device and manufacturing method thereof |
| CN102437255A (en) * | 2011-11-25 | 2012-05-02 | 上海祥羚光电科技发展有限公司 | Fluorescent chip for white light LED (light-emitting diode) prepared by spinning coating process |
| CN103137832A (en) * | 2013-03-13 | 2013-06-05 | 深圳市晨日科技有限公司 | Light-emitting diode integrated manufacturing process |
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2014
- 2014-03-28 CN CN201410120089.5A patent/CN103956420A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101267011A (en) * | 2007-03-13 | 2008-09-17 | 夏普株式会社 | Semiconductor light emitting device and multiple lead frame for semiconductor light emitting device |
| CN102130248A (en) * | 2010-10-08 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Light emitting device and manufacturing method thereof |
| CN102437255A (en) * | 2011-11-25 | 2012-05-02 | 上海祥羚光电科技发展有限公司 | Fluorescent chip for white light LED (light-emitting diode) prepared by spinning coating process |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826454A (en) * | 2016-05-17 | 2016-08-03 | 中国人民大学 | Discrete transparent ceramic flip chip integrated LED light source and packaging method thereof |
| CN108011006A (en) * | 2017-11-28 | 2018-05-08 | 西安科锐盛创新科技有限公司 | A kind of method for packaging white LED |
| CN108011006B (en) * | 2017-11-28 | 2020-06-30 | 广州市安亿仕电子科技有限公司 | White light LED packaging method |
| CN109817786A (en) * | 2019-01-24 | 2019-05-28 | 江门市江海区凯辉光电器材厂有限公司 | Upside-down mounting straight cutting LED and upside-down mounting straight cutting flat tube LED production technology |
| CN110242877A (en) * | 2019-04-12 | 2019-09-17 | 华芯半导体研究中心(广州)有限公司 | A kind of high heat dissipation high-power LED lamp bead and preparation method thereof |
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Application publication date: 20140730 |