CN110610928A - Integrated LED packaging form using WLP and preparation method thereof - Google Patents
Integrated LED packaging form using WLP and preparation method thereof Download PDFInfo
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- CN110610928A CN110610928A CN201810618432.7A CN201810618432A CN110610928A CN 110610928 A CN110610928 A CN 110610928A CN 201810618432 A CN201810618432 A CN 201810618432A CN 110610928 A CN110610928 A CN 110610928A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 137
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 115
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 27
- 235000012431 wafers Nutrition 0.000 claims description 25
- 239000000543 intermediate Substances 0.000 claims description 14
- 239000003292 glue Substances 0.000 claims description 12
- 238000012360 testing method Methods 0.000 claims description 8
- 239000007921 spray Substances 0.000 claims description 4
- 230000002457 bidirectional effect Effects 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000001746 injection moulding Methods 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000005070 sampling Methods 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 9
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000033228 biological regulation Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000005538 encapsulation Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
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- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to an integrated LED packaging form utilizing WLP and a preparation method thereof, wherein the integrated LED packaging form utilizing WLP comprises a packaging substrate, WLP packaging structures distributed on the packaging substrate and an outermost packaging layer coated on the WLP packaging structures; the WLP packaging structures are multiple and have the same light emitting surface, each WLP packaging structure comprises an LED chip and a single-concentration fluorescent powder layer covering the top surface of the chip, and the fluorescent powder layers and the outermost packaging layer are made of different materials or have different fluorescent powder concentrations. The invention has the advantages that: the integrated LED packaging mode using WLP is beneficial to the process production to reach a target value, reduces the process difficulty and improves the packaging efficiency and the device yield; the heat dissipation performance of the light-emitting chip can be improved, and the preparation cost of the device can be reduced; the accuracy of device color temperature regulation and better light type are improved, the threshold value of the color temperature range is increased, and the lighting effect suitable for various scenes is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor packaging, and particularly relates to an integrated LED packaging form using WLP and a preparation method thereof.
Background
The Light Emitting Diode (LED) has the advantages of small volume, long service life, energy conservation, environmental protection, high response speed, firmness, durability and the like, is widely applied to the fields of automobiles, indoor illumination, traffic signal lamps, screen display, liquid crystal backlight and the like, and is an ideal light source for replacing the traditional light source. With the improvement of the living quality requirements of people, a light source with good light shape, high light density and high light efficiency and color temperature adjustable suitable for various situations gradually becomes a focus of attention.
In a general CSP packaging mode, the problems that a chip and a substrate cannot be accurately attached, bin entering rate of fluorescent powder is low, light type defects and the like easily occur in the packaging process. Therefore, the derived light source packaging modes of the traditional SMD, COB, filament lamp and the like are limited by the defects of the self packaging mode of the light emitting chip, so that the problems of uneven emergent mixed light, complex die bonding, difficult heat dissipation, light leakage at the side surface of the chip and the like are easily caused, and the difficulty and the heaviness are particularly caused when the lamp with the adjustable color temperature is manufactured. At present, the novel WLP packaging structure can effectively solve the problems of complex process and high cost caused by high powder spraying difficulty and poor uniformity of the traditional CSP packaging device.
The WLP packaging structure has the problem of blue light leakage due to no fluorescent powder layer on the side surface, although the packaging process is simple and the division and mounting are accurate. Therefore, it is very necessary to develop a packaging method capable of applying the novel WLP packaging structure and solve the WLP self-packaging defect, thereby reducing the production cost, improving the heat dissipation performance of the device, improving the reliability and uniformity, and realizing the high-precision color temperature adjustable LED packaging structure.
Disclosure of Invention
The invention aims to provide a high-precision integrated LED packaging mode and a preparation method thereof, wherein the integrated LED packaging mode can apply a novel WLP packaging structure, reduce the preparation cost of a device and improve the reliability and uniformity of the device.
In order to solve the technical problems, the technical scheme of the invention is as follows: the utility model provides an utilize integrated form LED packaging form of WLP, includes packaging substrate, WLP packaging structure and the outermost packaging layer that sets gradually from bottom to top, and its innovation point lies in: the WLP packaging structures in the outermost packaging layer are multiple and have the same light-emitting surface, each WLP packaging structure comprises an LED chip and a single-concentration fluorescent powder layer covering the top surface of the chip, and the fluorescent powder layer and the outermost packaging layer have different fluorescent powder concentrations or different materials.
A preparation method for realizing the integrated LED packaging form has the innovation points that: the preparation method comprises the following steps:
step S1: performing sampling test on the LED wafer;
step S2: selecting a part of wafers from the wafers qualified by the extraction test in the step S1, and performing the step S21 or the step S22;
step S21 is specifically to spray a layer of phosphor layer directly on the light emitting surface of the top surface of the qualified wafer extracted and detected in step S1, then to apply a film, and to cut and split the film-applied wafer to form an independent chip intermediate, then to perform one-way or two-way film expansion, and the phosphor layer after film expansion forms a first concentration phosphor layer on the top surface of each chip intermediate, and to form a fillable gap between the chip intermediates adjacent in the one-way or two-way direction by film expansion; covering a reflective adhesive layer on the side surface of the chip intermediate body at the position where the gap can be filled;
step S22 is specifically to perform film sticking on the qualified wafer extracted and detected in step S1, cut and split the film-stuck wafer to form an independent chip intermediate, spray a layer of phosphor layer on the light-emitting surface of the top surface of the whole wafer after the split, then perform bidirectional film expansion, and form a first concentration phosphor layer on the top surface of each chip intermediate by the phosphor layer after the film expansion;
step S3: baking and curing the whole wafer after the step S2, and then testing, sorting and rearranging chips to obtain an LED chip with the top surface covered with the single-concentration fluorescent powder layer and the same light-emitting surface, namely a WLP packaging structure with the single-concentration fluorescent powder layer;
step S4: welding a plurality of WLP packaging structures with the same light-emitting surface or surfaces on a packaging substrate;
step S5: and packaging a plurality of WLP packaging structures in the same outermost packaging layer to finish packaging.
Further, between the step S3 and the step S4, the top surfaces and the side surfaces of the WLP package structures rearranged in the step S3 are entirely covered with the translucent or transparent second-concentration fluorescent layer, and the chips are divided again after being baked and cured, so as to form the WLP package structure having the single-concentration fluorescent layer and the second-concentration fluorescent layer.
Further, the side wall of the WLP package structure may be selectively coated with a reflective glue layer.
Further, the package substrate may be a COB light source package substrate, a support on an SMD tape, or a straight/curled filament strip.
Further, the LED chip in the WLP package structure is any one of a chip with a forward mounting structure, a chip with a flip structure, or a chip with a vertical structure.
Furthermore, the WLP packaging structure can select two or more packaging forms with different high and low color temperatures, and forms an LED packaging structure with adjustable color temperature with the outermost packaging layer.
Furthermore, the outermost packaging layer is a fluorescent layer, the concentration of fluorescent powder of the fluorescent layer is lower than that of the WLP fluorescent powder layer, and the WLP packaging structure is packaged by the outermost packaging layer to form a WL-COB type LED packaging form.
Furthermore, the outermost packaging layer is formed by PPA or epoxy resin materials in an injection molding mode, and the WLP packaging structure is packaged by the outermost packaging layer to form a WL-SMD type LED packaging form.
Furthermore, the outermost packaging layer is a fluorescent layer completely wrapped on the straight or curled lamp filament strip, the concentration of fluorescent powder of the fluorescent layer is lower than that of the WLP fluorescent powder layer, and the WLP packaging structure is packaged by the outermost packaging layer to form a WL-filament strip LED packaging form.
The invention has the advantages that:
(1) the invention utilizes the integrated LED packaging form of WLP, wherein the WLP packaging structure has most of heat absorbed by large-particle precipitated fluorescent powder sprayed at one time, and the outermost packaging layer is hardly influenced by the heat dissipation of the light-emitting chip, thereby reducing the occurrence of colloid cracks; the sprayed fluorescent powder layer is non-transparent, but the outline is basically consistent with that of the chip, so that the subsequent processes such as die bonding, electrode alignment and the like can be accurately carried out, the process difficulty is reduced, and the device preparation cost is further reduced; and traditional CSP encapsulation rete is thick, the heat dissipation is poor, silica gel gas tightness is not good under the high temperature and high humidity, easily falls the powder, easily introduces the bubble, and because can only see the phosphor powder surface, chip and pad can't realize accurate location, appear leaking electricity easily, open a way reliability risk.
(2) The invention utilizes the integrated LED packaging form of WLP, wherein, only the top surface of the WLP packaging structure is covered with thin layer phosphor powder, so that the light emitting uniformity is better; the outermost packaging layer has a complementary effect on the primary fluorescent powder spraying of WLP, so that the problem of side wall blue light leakage can be effectively solved; the outer layer reflective glue has a protective effect on the lower layer fluorescent powder layer, single-side light emitting, three-side light emitting or five-side light emitting is realized by coating different side surfaces, and the LED fluorescent lamp is suitable for different scenes and has a wide application range; and traditional CSP encapsulation is because phosphor powder distribution uniformity, thickness, the luminous difficult control of side, and one time spraying income bin rate is low, and because the chip is put, cutting error makes CSP side glue thick inconsistent easily, influences side light-emitting uniformity, leads to the light type unsatisfactory.
(3) The invention utilizes the integrated LED packaging form of WLP, has smaller packaging size, wider application range and higher packaging processing efficiency, is easier to realize the miniaturization and integration of a light source, has simple and stable process flow, greatly improves the yield of devices and is beneficial to realizing the LED packaging structure with adjustable color temperature.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a schematic cross-sectional view of an integrated LED package form utilizing WLP of an embodiment.
Fig. 2 is a schematic cross-sectional view of a WLP package structure in fig. 1.
Fig. 3 is a schematic cross-sectional view of another WLP package structure in fig. 1.
FIG. 4 is a schematic top view of a WL-COB type LED package of the present invention.
FIG. 5 is a schematic top view of a WL-SMD type LED package according to the present invention.
FIG. 6 is a schematic top view of a WL-filament strip LED package of the present invention.
Fig. 7 is a schematic top view of a conventional color temperature adjustable filament strip package.
Detailed Description
The following examples are presented to enable one of ordinary skill in the art to more fully understand the present invention and are not intended to limit the scope of the embodiments described herein.
Embodiments 1 to 3 in an integrated LED package form using WLP, the WLP package structure can adopt two structures, the first structure, as shown in fig. 2, includes an LED chip 21 and a single-concentration phosphor layer 22 covering the top surface of the chip; the second structure is a WLP package structure having a single-concentration phosphor layer and a second-concentration phosphor layer, that is, a WLCSP package structure derived from the WLP package structure, as shown in fig. 3, which includes an LED chip 21 and a single-concentration phosphor layer 22 covering the top surface of the chip to form a WLP package structure, and a translucent or transparent second-concentration phosphor layer 23 is integrally coated on the top surface and the side surface of the WLP package structure.
Example 1
The WL-COB type LED package form of this embodiment, as shown in fig. 4, includes a COB light source package substrate 1, a WLP package structure 2, and an outermost fluorescent glue seal layer 3, which are sequentially disposed from bottom to top; as shown in fig. 2, the WLP package structure 2 includes an LED chip 21 and a single-concentration fluorescent layer 22 sequentially arranged from inside to outside.
In the WLP packaging structure 2 of this embodiment, the LED chips 21 are selected from any one of a forward mounting structure chip, a flip structure chip, or a vertical structure chip, and the arrangement of the LED chips 21 is not limited to matrix and lattice or ring arrangement, and can be flexibly arranged according to actual scene requirements to sufficiently and uniformly emit light; the single-concentration fluorescent powder layer 22 in the WLP packaging structure 2 only covers the top surface of the chip and does not cover the side surface, and the thickness is 5 mu m; the outermost fluorescent glue sealing layer 3 evenly covers the WLP packaging structure, the concentration of fluorescent powder of the outermost fluorescent glue sealing layer is lower than the single-concentration fluorescent layer 22 of the WLP packaging structure, and the thickness of the outermost fluorescent glue sealing layer is 20 mu m.
This embodiment WLP packaging structure each direction is even goes out the light, and the blue light phenomenon is leaked to the nothing side, and the light type is good, constitutes high light efficiency WL-COB type LED packaging form.
Example 2
The WL-SMD type LED package form of the present embodiment, as shown in fig. 1 and 5, includes a support 1 on an SMD tape, a WLP and its derivative WLCSP package structure 2, and an outermost plastic encapsulation layer 3; as shown in fig. 2, the WLP package structure 2 includes an LED chip 21 and a single-concentration fluorescent layer 22 sequentially arranged from inside to outside; the WLCSP package structure 2, as shown in fig. 3, includes an LED chip 21 and a single-concentration phosphor layer 22 covering the top surface of the chip, and forms a WLP package structure, wherein the top surface and the side surface of the WLP package structure are integrally covered with a translucent or transparent second-concentration phosphor layer 23, and the WLP and WLCSP package structures 2 are sequentially and alternately arranged and packaged on the support 1 on the SMD tape.
In this embodiment, the concentration of the phosphor in the second concentration fluorescent layer 23 of the WLCSP type LED package structure is less than that of the single concentration fluorescent powder layer 22, and the area of the side surface of the chip light emitting surface, which is less than 10%, is allowed to be covered by the single concentration fluorescent powder layer 22, and the thickness of each side surface and the top surface is 10 μm; two side surfaces of the WLP/WLCSP packaging structure parallel to the SMD tape edge are covered with a layer of reflective glue with the thickness of 3 mu m; the outermost plastic package layer 3 is formed by PPA or epoxy resin materials in an injection molding mode, light emission of the internal chip is not affected, and the heat dissipation performance is good.
In the WLCSP type LED package structure of this embodiment, the concentration of the phosphor layer through which light emitted from the LED chip passes is higher than that of the WLP package structure, so that light with a lower color temperature is emitted, and is uniformly mixed with light with a higher color temperature emitted from the WLP package structure, and the color temperature is adjusted by driving the current through the parallel circuit; two side surfaces of the chip, which are parallel to the SMD rolling strip edge, are coated with reflective glue, so that light is emitted from three surfaces of the chip, and a high-light-efficiency WL-SMD type LED packaging form is formed.
Example 3
Compared with embodiment 2, in the WL-filament strip LED package of this embodiment, as shown in fig. 6, the WLP and WLCSP package structures are unchanged, and other structures include a straight strip lamp strip 1 and a fully-wrapped phosphor layer 3, but the side surface of the chip is not wrapped by the reflective glue.
In the embodiment, the concentration of the fluorescent powder layer through which light emitted by the LED chip in the WLCSP packaging device passes is higher than that of the WLP packaging device, so that light with lower color temperature is emitted, is uniformly mixed with light with higher color temperature emitted by the WLP packaging device, and the effect of adjusting color temperature is achieved by driving current of the parallel circuit; the periphery of the chip is free of reflective glue, so that light is emitted from five surfaces of the chip, the light shape is good, and a high-light-efficiency WL-filament strip-shaped LED packaging form is formed.
Example 4
This example illustrates the WL-filament strip encapsulation form of example 3, which is prepared by the following steps:
and step S1, performing sampling test on the LED wafer, wherein the wafer is any one of a chip with a positive structure, a chip with a reverse structure or a chip with a vertical structure.
Step S2, film pasting is carried out on the qualified wafer extracted and detected in the step S1, the wafer after film pasting is cut and split to form an independent chip intermediate, a layer of fluorescent powder layer is sprayed on the light emitting surface of the top surface of the whole wafer after the wafer is split, then bidirectional film expansion is carried out, and the fluorescent powder layer after the film expansion forms a first concentration fluorescent layer on the top surface of each chip intermediate;
step S3: baking and curing the whole wafer subjected to the step S2, and then carrying out chip testing, sorting and rearrangement to obtain an LED chip with the top surface covered with a single-concentration fluorescent powder layer, namely a WLP packaging structure with the single-concentration fluorescent powder layer;
step S4: forming a semitransparent or transparent second concentration fluorescent layer 23 on the obtained WLP packaging structure, wherein the concentration of fluorescent powder of the second concentration fluorescent layer is less than that of the first concentration fluorescent layer, the area of the side surface of the light emitting surface of the chip, which is less than 10%, is allowed to be covered by the first concentration fluorescent layer, and the thickness of the second concentration fluorescent layer is 5 mu m; then baking, curing and cutting are carried out again to obtain a WLCSP packaging structure with the double-concentration fluorescent powder layer;
step S5: connecting the selected WLP and WLCSP packaging structures which have different color temperatures and are all five-sided light emitting on the straight strip lamp 1 in a parallel connection mode through a metal welding mode;
step S6: and (3) completely wrapping a fluorescent powder layer of which the concentration of the fluorescent powder is lower than that of the fluorescent layer of the second concentration of the WLCSP packaging device on the outer surface of the straight strip lamp filament 1, drying, and finishing packaging, wherein the thickness of the fluorescent powder layer is 20 mu m.
As shown in fig. 7, the conventional color temperature adjustable filament strip packaging structure includes a filament strip 1, a blue LED chip 4, a CSP packaging device 5 and a full-coating phosphor layer 3.
The embodiment is in a WL-filament strip type LED packaging form. Compared with the traditional filament strip packaging structure with adjustable color temperature, the blue light LED chip and the CSP packaging device are completely replaced by the WLP and the derived WLCSP packaging structure, the light-emitting range is wider, the adjustability is better, the manufacturing cost is lower, the fineness of color temperature change is higher, and the LED filament strip packaging structure is applicable to wider application occasions.
The integrated LED packaging form utilizing WLP and the packaging mode of the embodiment thereof have the advantages of smaller packaging size, wider application range, higher packaging and processing efficiency, easier realization of miniaturization and integration of a light source, simple and stable process flow, greatly improved device yield and reduced device preparation cost. Its packaging method who uses novel WLP packaging structure can reduce the junction temperature heat dissipation to the influence of LED chip, ensures that luminous light type is good, and the setting of the adjustable phosphor powder layer of multilayer simultaneously for the light that sends is more controllable and more even, and luminous efficiency and luminous intensity are higher, effectively promotes colour temperature variable range and meticulous degree, uses in order to be applicable to the colour temperature regulation under the more extensive occasion.
The foregoing shows and describes the general principles and features of the present invention, together with the advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. The utility model provides an utilize integrated form LED packaging form of WLP, includes packaging substrate, WLP packaging structure and the outermost packaging layer that sets gradually from bottom to top, its characterized in that: the WLP packaging structures in the outermost packaging layer are multiple and have the same light-emitting surface, each WLP packaging structure comprises an LED chip and a single-concentration fluorescent powder layer covering the top surface of the chip, and the fluorescent powder layer and the outermost packaging layer have different fluorescent powder concentrations or different materials.
2. A manufacturing method for realizing the integrated LED package form of claim 1, wherein: the preparation method comprises the following steps:
step S1: performing sampling test on the LED wafer;
step S2: selecting a part of wafers from the wafers qualified by the extraction test in the step S1, and performing the step S21 or the step S22;
step S21 is specifically to spray a layer of phosphor layer directly on the light emitting surface of the top surface of the qualified wafer extracted and detected in step S1, then to apply a film, and to cut and split the film-applied wafer to form an independent chip intermediate, then to perform one-way or two-way film expansion, and the phosphor layer after film expansion forms a first concentration phosphor layer on the top surface of each chip intermediate, and to form a fillable gap between the chip intermediates adjacent in the one-way or two-way direction by film expansion; covering a reflective adhesive layer on the side surface of the chip intermediate body at the position where the gap can be filled;
step S22 is specifically to perform film sticking on the qualified wafer extracted and detected in step S1, cut and split the film-stuck wafer to form an independent chip intermediate, spray a layer of phosphor layer on the light-emitting surface of the top surface of the whole wafer after the split, then perform bidirectional film expansion, and form a first concentration phosphor layer on the top surface of each chip intermediate by the phosphor layer after the film expansion;
step S3: baking and curing the whole wafer after the step S2, and then testing, sorting and rearranging chips to obtain an LED chip with the top surface covered with the single-concentration fluorescent powder layer and the same light-emitting surface, namely a WLP packaging structure with the single-concentration fluorescent powder layer;
step S4: welding a plurality of WLP packaging structures with the same light-emitting surface or surfaces on a packaging substrate;
step S5: and packaging a plurality of WLP packaging structures in the same outermost packaging layer to finish packaging.
3. The method of making an integrated LED package form according to claim 2, wherein: between the step S3 and the step S4, the top surfaces and the side surfaces of the WLP package structures rearranged in the step S3 are entirely covered with the translucent or transparent second-concentration fluorescent layer, and the chips are divided again after being baked and cured to form the WLP package structure having the single-concentration fluorescent powder layer and the second-concentration fluorescent layer.
4. The method of making an integrated LED package form according to claim 3, wherein: the side wall of the WLP packaging structure can be selectively coated with a reflective glue layer.
5. The method of making an integrated LED package form according to claim 2, 3 or 4, wherein: the packaging substrate is any one of a COB light source packaging substrate, a support on an SMD tape coiling tape or a straight strip/curled lamp strip.
6. The method of making an integrated LED package form according to claim 2, 3 or 4, wherein: the LED chip in the WLP packaging structure is any one of a chip with a forward mounting structure, a chip with a flip structure or a chip with a vertical structure.
7. The method of making an integrated LED package form according to claim 2, 3 or 4, wherein: the WLP packaging structure can select two or more packaging forms with different high and low color temperatures, and forms an LED packaging structure with adjustable color temperature with the outermost packaging layer.
8. The method of making an integrated LED package form according to claim 2, 3 or 4, wherein: the outermost packaging layer is a fluorescent layer, the concentration of fluorescent powder of the fluorescent layer is lower than that of the WLP fluorescent powder layer, and the WLP packaging structure is packaged by the outermost packaging layer to form a WL-COB type LED packaging form.
9. The method of making an integrated LED package form according to claim 2, 3 or 4, wherein: the outermost packaging layer is formed by PPA or epoxy resin materials in an injection molding mode, and the WLP packaging structure is packaged by the outermost packaging layer to form a WL-SMD type LED packaging form.
10. The method of making an integrated LED package form according to claim 2, 3 or 4, wherein: the outermost packaging layer is a fluorescent layer which is completely wrapped on the straight strip or the curled lamp strip, the concentration of fluorescent powder of the fluorescent layer is lower than that of the WLP fluorescent powder layer, and the WLP packaging structure is packaged by the outermost packaging layer to form a WL-filament strip LED packaging form.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| PCT/CN2019/095301 WO2019219095A1 (en) | 2018-05-17 | 2019-07-09 | Integrated led packaging form which uses wlp, and preparation method therefor |
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Application publication date: 20191224 |